240 results about "Silicon oxynitride" patented technology

The invention relates to a solar cell anti-reflection film and a preparation method and application thereof. The solar cell anti-reflection film comprises a silicon oxide layer, a first silicon nitride layer, a second silicon nitride layer, a third silicon nitride layer, a first silicon oxynitride layer and a second silicon oxynitride layer which are stacked in sequence, the refractive index of the first silicon nitride layer is higher than that of the silicon oxide layer; and the refractive indexes of the first silicon nitride layer, the second silicon nitride layer, the third silicon nitride layer, the first silicon oxynitride layer and the second silicon oxynitride layer are sequentially decreased. According to the solar cell anti-reflection film, the uniformity among the film layers in the solar cell can be improved, and meanwhile, the good uniformity of color distribution on the surface of the solar cell can be achieved.

The invention belongs to the technical field of photovoltaic wet etching, and particularly relates to a low-concentration hydrofluoric acid composite etching solution and a preparation method and an etching process thereof, and the low-concentration hydrofluoric acid composite etching solution comprises the following components in percentage by mass: 5%-10% of hydrofluoric acid, 2%-5% of an etching additive and the balance of water; wherein the etching additive comprises the following components in percentage by mass: 8%-25% of a strong oxidant, 2%-5% of an etching accelerant, 0.5%-2% of an interface modification and mass transfer accelerant, 0.1%-3% of a product control and stabilizer, 0.1%-2% of an equipment compatible corrosion inhibitor and the balance of water; the strong oxidant is used for oxidizing silicon nitride to form a silicon oxynitride transition layer, the etching accelerant is used for providing HF molecules and HF2-ions, and the product control and stabilizing agent is used for complexing SiF62-ions generated by etching.

The invention belongs to the technical field of solar cell anti-aging, and provides an anti-attenuation film layer of a cell and a preparation method thereof.The anti-attenuation film layer comprises at least one silicon oxide layer, at least two silicon oxynitride layers, at least three silicon nitride layers, a first structural layer, at least two aluminum oxide layers and a doping layer which are sequentially arranged on the upper surface of crystalline silicon from top to bottom, the refractive index of the first structure layer is 1.8-2.1, and the refractive index of the bottommost layer of silicon nitride is 2.4-3.0. The bottommost aluminum oxide layer is subjected to dark annealing, so that the hydrogen content in aluminum oxide and the hydrogen content among three silicon nitride film layers are reduced; due to the increase of the high refractive index of the silicon nitride layer III, the parasitic absorption ratio of short-wave ultraviolet light in the film layer is increased, and the incidence amount of the ultraviolet light is reduced. According to the invention, the conduction rate of hydrogen into the silicon wafer body is reduced, the concentration content of free hydrogen at the interface is sequentially reduced, and the penetration angle of ultraviolet light is reduced, so that the ultraviolet attenuation resistance of the cell is realized.

Methods of depositing silicon-containing layers in the formation of semiconductor devices are described. The methods include a thermal chemical vapor deposition (CVD) process or a thermal atomic layer deposition (ALD) process without the use of plasma. Some methods include exposing a semiconductor substrate to a silicon-containing precursor, an oxygen-containing reactant, and an initiator compound to deposit a silicon oxide layer. Some methods include exposing a semiconductor substrate to a silicon-containing precursor, a nitrogen-containing reactant, and an initiator compound to deposit a silicon nitride layer. Some methods include exposing a semiconductor substrate to a silicon-containing precursor, an oxygen-containing reactant, a nitrogen-containing reactant, and an initiator compound to deposit a silicon oxynitride layer.

A method for fabricating a surface acoustic wave (SAW) device includes the steps of forming a buffer layer on a substrate, forming a high velocity layer on the buffer layer, forming a medium velocity layer on the high velocity layer, forming a low velocity layer on the medium velocity layer, forming a piezoelectric layer on the low velocity layer, and forming an electrode on the piezoelectric layer. Preferably, the buffer layer includes silicon oxide, the high velocity layer includes graphene, the medium velocity layer includes silicon oxynitride, and the low velocity layer includes titanium oxide.

The present invention provides a multi-layer doping source structure, and a high-quality emitter and a controllable preparation method therefor. The multi-layer doping source structure comprises a dielectric layer, a nitrogen silicide layer and a doping source layer, which are stacked on the front surface of a crystalline silicon substrate, wherein the dielectric layer is a silicon oxide film or a silicon oxynitride film, the doping source layer is boron-doped amorphous silicon doped with functional elements or phosphorus-doped amorphous silicon doped with functional elements, and the functional elements doped in the doping source layer are carbon and / or nitrogen. In the present invention, the doping source structure is composed of the dielectric layer, a nitrogen silicide and boron- / phosphorus-doped amorphous silicon doped with functional elements; the multi-layer doping source structure has both a strong laser absorption capability and a high boron or phosphorus doping concentration, thereby facilitating a reduction in the laser power and the illumination time required by a laser selective emitter technique; moreover, such a multi-layer doping source structure is favorable for reducing the surface boron concentration, decreasing defects and improving the passivation effect of an emitter, and therefore an improvement in battery efficiency can be promoted.

The invention relates to the technical field of solar cells, in particular to a solar cell and a preparation method thereof, which can improve the passivation performance, the light utilization rate and the antireflection performance of the solar cell to the greatest extent while giving consideration to the ultraviolet attenuation resistance of the solar cell. A solar cell includes a substrate and a first optical adjustment layer; the first optical adjustment layer comprises a first sub-layer, a second sub-layer, a third sub-layer, a silicon oxynitride layer and a first silicon oxide layer which are sequentially stacked in the direction gradually away from the substrate; the refractive index of the first sub-layer is 2.3-2.42, the refractive index of the second sub-layer is 2.12-2.2, the refractive index of the third sub-layer is 2.0-2.1, and the thickness ratio of the first sub-layer to the second sub-layer to the third sub-layer is (10-15): (6-10): (16-24); the refractive index of the silicon oxynitride layer is 1.75-2.0, the refractive index of the first silicon oxide layer is 1.54-1.75, and the thickness ratio of the silicon nitride layer to the silicon oxynitride layer to the first silicon oxide layer is (32-49): (18-26): (10-15).

The topcon battery comprises an n-type silicon substrate, and a P-type emitting electrode, a first tunneling oxide layer, a local POLY layer, a first aluminum oxide passivation layer, a first silicon oxide layer, a first silicon oxynitride layer, a silicon nitride anti-reflection layer and a first silk-screen printing layer are sequentially arranged on the front face of the n-type silicon substrate. And a second tunneling oxide layer, a POLY layer, a second aluminum oxide passivation layer, a second silicon dioxide layer, a second silicon oxynitride layer, a third silicon nitride layer and a second silk-screen printing layer are sequentially arranged on the back surface. According to the invention, optimization is carried out by adopting a film layer superposition passivation principle, and the TOPCon efficiency and reliability are improved.

Silicon Photonics is a candidate technology for adding integrated optics functionality, either passive or active optical waveguides) to integrated circuits by leveraging the economies of scale of the CMOS microelectronics industry and using materials for the waveguide core such as silicon nitride (SiXNY) and silicon oxynitride (SiOXN1-X) for example. Microelectromechanical systems (MEMS) provide for movable platforms relative to the substrate allowing additional functionality to be added to a silicon circuit but also Silicon Photonics. Accordingly, by combining “fixed” waveguides formed upon the substrate with “movable” waveguides formed upon one or more movable platforms the inventors have established a series of Integrated Optics MEMS (IO-MEMS) based on Silicon Photonics. Such IO-MEMS include optical switches, optical attenuators, optical gates, optical switch matrices, configurable wavelength division multiplexer / demultiplexer devices, etc. exploiting both platforms and deformable beams.

A semiconductor device according to an embodiment includes a channel layer; a barrier layer above the channel layer and including a material having a different energy band gap than the channel layer; a gate electrode above the barrier layer; a gate semiconductor layer between the barrier layer and the gate electrode; a source electrode and a drain electrode on respective sides of the gate electrode and on respective sides of the channel layer and the barrier layer; a field dispersion layer connected to the source electrode and on the gate electrode; and a protection layer between barrier layer and the field dispersion layer, wherein the protection layer includes a first protection layer above the barrier layer and including silicon oxide, and a second protection layer positioned above the first protection layer and including silicon oxynitride.

A pellicle membrane is formed from a core layer and two capping layers of specified structure. In some embodiments, the core layer includes a high percentage of the Mo3Si crystal phase. In other embodiments, the capping layers comprise silicon oxynitride or silicon carbon nitride. The resulting pellicle membrane has a combination of high transmittance for EUV light and low reflectivity of both EUV and DUV light.

The invention discloses a superhard film layer and a preparation method thereof. The superhard film layer comprises a base layer; the wear-resistant layer is arranged at the top of the base layer and is used for enhancing scratch resistance and fatigue resistance; the silicon oxynitride layer is arranged at the top of the wear-resistant layer and is used for adjusting the hardness and structural compatibility between different film layers; the titanium and zirconium doped silicon nitride layer is arranged at the top of the silicon oxynitride layer; the hydrogen-containing gradient silicon oxynitride layer is arranged on the top of the titanium-zirconium-doped silicon nitride layer, titanium, zirconium and hydrogen elements are introduced into the film layer, and the gradient film layer design is adopted, so that the hardness, the wear resistance and the corrosion resistance of the film layer are remarkably improved. A hardness test shows that the hardness of the prepared super-hard film layer is remarkably improved compared with that of a traditional film layer, and the prepared super-hard film layer can effectively resist scraping and abrasion in daily use and improve the service life and imaging stability of a lens in practical application such as a camera lens.

The present application discloses a flash memory, wherein a gate dielectric layer of a storage transistor comprises a tunneling dielectric layer, a storage dielectric layer, and a barrier dielectric layer stacked in sequence. The storage dielectric layer includes a first silicon nitride layer, a second interface layer, and a third silicon nitride layer stacked in sequence. The material for the second interface layer is silicon oxynitride. With the storage transistor in a programming state, programming electrons are stored in the defect of the first silicon nitride layer and the defect of the third silicon nitride layer, and the outflow of the programming electrons out of the storage dielectric layer is reduced by means of the feature that the width of band gap of silicon oxynitride is greater than that of silicon nitride. The present application also discloses a method of making a flash memory.

The present invention provides a passivation film structure capable of achieving both passivation and surface doping, and a preparation method therefor and the use thereof. The passivation film structure comprises a nano-dielectric layer, a silicide layer and a hydrogen-rich dielectric layer, which are sequentially stacked on a surface of a silicon substrate, wherein the nano-dielectric layer is made of a hydrogenated silicon oxide thin film or a hydrogenated silicon oxynitride thin film, the silicide layer is made of a carbon-containing and / or nitrogen-containing boron / phosphorus-doped hydrogenated silicon thin film, and the hydrogen-rich dielectric layer is made of one or more of a laminated thin film selected from a hydrogenated aluminum oxide thin film, a hydrogenated silicon nitride thin film, a hydrogenated silicon oxide thin film and a hydrogenated silicon oxynitride thin film. The passivation film structure of the present invention has good passivation performance, and can achieve a good passivation effect on polished and textured silicon wafers or boron / phosphorus diffused emitters; moreover, the passivation film structure contains boron / phosphorus, and can achieve surface doping on silicon wafers during the preparation process of the passivation film, without requiring an additional doping process.

A solar cell, a method for producing a solar cell and a solar cell module are provided. The solar cell includes: a substrate having a front surface and a rear surface opposite to the front surface; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed on the front surface and in a direction away from the front surface; wherein the first passivation layer includes a dielectric material; the second passivation layer includes a first silicon nitride SimNn material, and a ratio of n / m is 0.5˜1; the third passivation layer includes a silicon oxynitride SiOiNj material, and a ratio of j / i is 0.1˜0.6; and a tunneling oxide layer and a doped conductive layer sequentially formed on the rear surface and in a direction away from the rear surface, wherein the doped conductive layer and the substrate have a doping element of a same conductivity type.

The invention belongs to the technical field of wet electronic chemicals, and particularly relates to a buffer oxide etching solution (BOE) with high selection ratio of silicon dioxide (SiO2) to silicon oxynitride (SiOxNy) in semiconductor manufacturing, and the etching solution comprises the following components in percentage by mass: 0-20% of HF, 20-40% of NH4F, 0.01-0.05% of an impregnating compound, 0.005-0.01% of an additive and the balance of ultrapure water. The wetting agent is introduced, so that the wettability of the silicon dioxide film layer can be improved, and the etching roughness is improved; meanwhile, after 2-(2-(2-hydroxyethoxy)-ethoxy)-ethyl phosphonic acid is added, a phosphonic acid group can form coordination with a Si-N bond in silicon oxynitride, and the silicon oxynitride film etching selection ratio of silicon dioxide can be remarkably increased under the condition that the silicon dioxide etching rate is not reduced. The etching liquid is stable, the solution is clear and transparent, and the addition of the additive can reduce the surface tension and improve the infiltration and undercutting capabilities of the etching liquid.

A heat ray shielding film comprising a glass substrate, a first layer, and a second layer, wherein: the first layer contains at least one substance selected from tungsten oxides represented by general formula WO3-x (0≤x≤0.28), silicon oxynitrides represented by general formula SiOaNb, and aluminum oxide; the second layer contains tungsten bronze; and the layers are arranged in the order of the first layer and the second layer, with the first layer being closest to the glass substrate.

A lens includes a lens portion, an anti-reflection (AR) coating layer disposed on a surface of the lens portion, and a water-repellent layer disposed on a surface of the AR coating layer. The water-repellent layer includes an inorganic layer having a plurality of pores and an organic layer at least partially disposed in the plurality of pores. The inorganic layer includes silicon oxynitride (SiOxNy).

To provide a specific silylamine compound useful as a precursor in vapor deposition of a silicon-containing material on the surface of a microelectronic device, a method for preparing the same, and a method for depositing a silicon-containing film on a microelectronic device substrate.SOLUTION: The silylamine compound is represented by general formula (I). The compounds can be utilized with an optional co-reactant to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, silicon oxycarbonitride (SiOCN), silicon carbonitride (SiCN), and silicon carbide.SELECTED DRAWING: Figure 1

Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon nitride, silicon oxide, silicon oxynitride, a carbon-doped silicon nitride, a carbon-doped silicon oxide, or a carbon doped silicon oxynitride film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using a compound comprising a carbon-carbon double or carbon-carbon triple bond. The plasma source employed comprises both a remote plasma source and an in-situ plasma source operating in combination.

The invention discloses a TOPCON battery front passivation structure for improving PID, and relates to the technical field of battery preparation, the TOPCON battery front passivation structure comprises an N-type silicon substrate, and a high-thickness aluminum oxide passivation film, an ultrathin silicon oxynitride film, a silicon nitride film layer, a silicon oxynitride film layer and a silicon oxide film are sequentially laminated from inside to outside, the silicon nitride film layer sequentially comprises a bottom-layer high-refraction silicon nitride film, a secondary-outer-layer silicon nitride film and an outermost-layer silicon nitride film from inside to outside, the silicon oxynitride film layer sequentially comprises a bottom-layer silicon oxynitride film and an outer-layer silicon oxynitride film from inside to outside, and the refractive index of the bottom-layer high-refraction silicon nitride film is 2.28-2.34. The refractive index of the bottom-layer high-refraction silicon nitride film is controlled by adjusting the nitrogen-silicon ratio, and the nitrogen-silicon ratio is 1: 3.3 or 1: 3.5. According to the front passivation structure of the TOPCON battery, metal ions and water vapor are effectively prevented from diffusing and entering a PN junction, reduction of minority carrier recombination loss is facilitated, performance degradation caused by PID can be relieved, and the open-circuit voltage and the short-circuit current are improved.

The invention relates to a double-layer component with an isolation structure and a semiconductor device.The double-layer component comprises a component upper-layer structure, a component lower-layer structure and the isolation structure located between the component upper-layer structure and the component lower-layer structure. The component is located between the component lower-layer structure and the component upper-layer structure; the first buffer structure is located on the main dielectric layer and comprises a first buffer layer and a second buffer layer, the second buffer layer is made of silicon nitride and / or silicon oxynitride, and the dielectric constant of the first buffer layer is larger than that of the second buffer layer. According to the invention, the double-layer first buffer structure is arranged between the main dielectric layer and the upper layer structure of the component, and the first buffer layer has a higher dielectric constant, so that the surface electric field intensity can be effectively reduced, and the withstand voltage of the double-layer component is improved.

The present application discloses a thin film transistor and an array substrate. The thin film transistor includes a gate electrode, a source electrode, and a drain electrode, and at least one of the gate electrode, the source electrode, or the drain electrode is a composite film layer. The composite film layer includes a metal layer, a low reflection functional layer, and an alloy layer which are arranged in layers. The alloy layer covering a surface of the low reflection functional layer can enhance stability of the low reflection functional layer. Because adhesion between the alloy layer and dielectric layers such as silicon oxide, silicon nitride, and silicon oxynitride is stronger than that of the low reflection functional layer, the bulge phenomenon is not easy to occur under a high temperature environment.

The application discloses a kind of refractory mortar for blast furnace ceramic cup and its preparation method and construction method, belong to refractory mortar technical field.The refractory mortar raw material components are as follows by mass percentage: microporous corundum fine powder 0.074-0mm 25-35%; active alumina powder 25-30%; silicon oxynitride microcrystalline powder 5-8%; alumina fiber 10-20%; silicon-aluminum alloy powder 10-15%; carbon black N990 5-8%; polyacrylic acid ammonium salt dispersing agent 0.5-1.5%; acidic zirconium dioxide sol (plus) 8-10%.The refractory mortar has good fluidity, simple and efficient construction method, can fully fill the blast furnace ceramic cup brick joint, and the brick joint can meet the construction requirements at 1.5mm, effectively resists the penetration and erosion of high-temperature molten iron from the brick joint caused by oversized joint and loose joint mortar.

The invention relates to a graphite boat and a preparation method thereof, and a deposition method of a battery piece pre-finished product. The graphite boat comprises a saturated graphite boat, a first silicon nitride film, a silicon oxynitride film and a silicon oxide film, the first silicon nitride film, the silicon oxynitride film and the silicon oxide film are sequentially stacked on the surface of the saturated graphite boat, the porosity of the first silicon nitride film is 27%-33%, and the ratio of the total thickness of the first silicon nitride film and the silicon oxide film to the thickness of the silicon oxynitride film is 2.5: 1-3.5: 1. And the refractive index of the silicon oxide film is 1.45-1.50. According to the graphite boat, the problem of edge black at the air inlet position of the solar cell when a new graphite boat is on line can be prevented, and the yield and the production stability are remarkably improved.

Silicon Photonics is a candidate technology for adding integrated optics functionality, either passive or active optical waveguides) to integrated circuits by leveraging the economies of scale of the CMOS microelectronics industry and using materials for the waveguide core such as silicon nitride (SiXNY) and silicon oxynitride (SiOXN1-X) for example. Microelectromechanical systems (MEMS) provide for movable platforms relative to the substrate allowing additional functionality to be added to a silicon circuit but also Silicon Photonics. Accordingly, by combining “fixed” waveguides formed upon the substrate with “movable” waveguides formed upon one or more movable platforms the inventors have established a series of Integrated Optics MEMS (IO-MEMS) based on Silicon Photonics. Such IO-MEMS include optical switches, optical attenuators, optical gates, optical switch matrices, configurable wavelength division multiplexer / demultiplexer devices, etc. exploiting both platforms and deformable beams.

The invention discloses an electronic component and a manufacturing method thereof, the electronic component comprises a device substrate and an insulating layer covering the surface of the device substrate, and the insulating layer comprises a silicon oxide layer growing on the surface layer of the device substrate and a nitrogen-rich silicon oxynitride layer formed on the surface of the silicon oxide layer. The manufacturing method of the electronic component comprises an insulating layer generation step: firstly growing a layer of silicon oxide on the surface of a device substrate, and then introducing nitrogen-containing gas at high temperature to carry out annealing treatment, so that nitrogen atoms are doped into the silicon oxide layer, and a silicon oxynitride layer with a nitrogen-rich surface is formed. The silicon oxynitride and the silicon oxide can give full play to respective advantages, and the silicon oxynitride and the silicon oxide have the advantages of being high in insulating layer uniformity, good in stability, resistant to high temperature and corrosion and high in stability in the product using process.

In various aspects, methods of making a silicon carbide or silicon nitride from rice hull ash (RHA) byproduct are provided. A treated silica depleted rice hull ash product (SDRHA) comprising silicon oxide at ≤ about 65% by weight and carbon ≥ about 35 % by weight may be heated in an environment free of any additional carbon sources, but in an inert atmosphere, having a temperature of ≥ about 1,200°C to ≤ about 1,700°C for a carbothermal reaction that forms a product (e.g., nanocomposite product) comprising at least one of silicon carbide (SiC), silicon nitride (Si3N4), and silicon oxynitride (Si2N2O or non-stoichiometric SiNxO4-x, where x ranges from greater than 0 to less than 4). A negative electroactive material is also provided that includes silicon oxynitride (Si2N2O), which may be used in a lithium ion battery.

A catalytic composition and process for forming and utilizing same in alkane dehydrogenation. An organometallic active material is deposited onto a silicon derived support such as a silicon imidonitride or silicon oxynitride. The active material facilitates the heterolytic C—H bond cleavage across a metal oxide bond.

The invention relates to the technical field of optical waveguides, and particularly discloses a manufacturing method of an optical waveguide end face coupler and the optical waveguide end face coupler, in the process of manufacturing the optical waveguide end face coupler, a dielectric material, namely silicon oxynitride or silicon oxycarbide, is deposited on a siliceous substrate wafer through a CVD method in a CMOS process, in the manufacturing process, the manufacturing process can be connected with the manufacturing process of an electronic device, the high-refractive-index gradient layers of the lower gradient layer, the middle gradient layer and the upper gradient layer and the core layer are finally manufactured, and the effective refractive index is linearly changed in cooperation with a common insulating medium in the semiconductor technology, namely, the low-refractive-index gradient layers prepared from silicon dioxide, and the effective refractive index is changed in a linear mode. And based on the characteristic that the refractive indexes of the silicon oxynitride and the silicon oxycarbide are adjustable, the optical waveguide end face coupler which can adapt to a semiconductor photon-electron heterogeneous integrated scene, can be compatible to the manufacturing process of an electronic device and has a wide-range core cladding refractive index difference is finally obtained.