308 results about "Silicon oxynitride" patented technology

The invention discloses a TOPCon battery capable of reducing UV attenuation and a preparation method thereof, and belongs to the field of TOPCon batteries, the TOPCon battery comprises a silicon substrate, and three silicon nitride layers / two silicon oxynitride layers / one silicon oxide layer are sequentially deposited on the front surface of the treated silicon substrate to form a front surface antireflection layer; and depositing three silicon nitride layers on the back of the silicon substrate to form a back antireflection layer. The polycrystalline solar cell has the advantages that three silicon nitride layers / two silicon oxynitride layers / one silicon oxide layer are arranged on the front face of the silicon substrate to serve as the front face antireflection layer, the color stability is high, the surface of the silicon substrate can be better passivated, light reflection can be better reduced, the open-circuit voltage and the short-circuit current of the polycrystalline solar cell are improved, and the service life of the polycrystalline solar cell is prolonged. Therefore, the photoelectric conversion efficiency of the polycrystalline solar cell is effectively improved.

The invention discloses a TOPCon battery front film layer with anti-UV attenuation effect and a preparation method thereof, belonging to the technical field of battery preparation. The invention adopts atomic layer deposition technology (ALD) and H2O as a precursor source to react in two stages to obtain a laminated aluminum oxide film layer with decreasing OH group content; then a silicon oxynitride film is added on the front laminated aluminum oxide film layer, and then a passivation film layer such as silicon nitride and silicon oxynitride is grown; the laminated structure can greatly reduce the interface state density of aluminum oxide and protect the passivation film layer; at the same time, the silicon oxynitride film layer and the heating process are added, so as to improve the film layer's blocking ability to H ions after UV irradiation, promote the crystallization of the aluminum oxide film layer, increase its effective thickness, and further improve its chemical passivation and field passivation effects, thereby reducing the UV attenuation effect of the TOPCon battery, improving the reliability measures of anti-UV attenuation, and compensating for the high efficiency loss of a single process of increasing the ALD reaction cycle.

The invention relates to a solar cell anti-reflection film and a preparation method and application thereof. The solar cell anti-reflection film comprises a silicon oxide layer, a first silicon nitride layer, a second silicon nitride layer, a third silicon nitride layer, a first silicon oxynitride layer and a second silicon oxynitride layer which are stacked in sequence, the refractive index of the first silicon nitride layer is higher than that of the silicon oxide layer; and the refractive indexes of the first silicon nitride layer, the second silicon nitride layer, the third silicon nitride layer, the first silicon oxynitride layer and the second silicon oxynitride layer are sequentially decreased. According to the solar cell anti-reflection film, the uniformity among the film layers in the solar cell can be improved, and meanwhile, the good uniformity of color distribution on the surface of the solar cell can be achieved.

The invention belongs to the technical field of photovoltaic wet etching, and particularly relates to a low-concentration hydrofluoric acid composite etching solution and a preparation method and an etching process thereof, and the low-concentration hydrofluoric acid composite etching solution comprises the following components in percentage by mass: 5%-10% of hydrofluoric acid, 2%-5% of an etching additive and the balance of water; wherein the etching additive comprises the following components in percentage by mass: 8%-25% of a strong oxidant, 2%-5% of an etching accelerant, 0.5%-2% of an interface modification and mass transfer accelerant, 0.1%-3% of a product control and stabilizer, 0.1%-2% of an equipment compatible corrosion inhibitor and the balance of water; the strong oxidant is used for oxidizing silicon nitride to form a silicon oxynitride transition layer, the etching accelerant is used for providing HF molecules and HF2-ions, and the product control and stabilizing agent is used for complexing SiF62-ions generated by etching.

The invention belongs to the technical field of solar cell anti-aging, and provides an anti-attenuation film layer of a cell and a preparation method thereof.The anti-attenuation film layer comprises at least one silicon oxide layer, at least two silicon oxynitride layers, at least three silicon nitride layers, a first structural layer, at least two aluminum oxide layers and a doping layer which are sequentially arranged on the upper surface of crystalline silicon from top to bottom, the refractive index of the first structure layer is 1.8-2.1, and the refractive index of the bottommost layer of silicon nitride is 2.4-3.0. The bottommost aluminum oxide layer is subjected to dark annealing, so that the hydrogen content in aluminum oxide and the hydrogen content among three silicon nitride film layers are reduced; due to the increase of the high refractive index of the silicon nitride layer III, the parasitic absorption ratio of short-wave ultraviolet light in the film layer is increased, and the incidence amount of the ultraviolet light is reduced. According to the invention, the conduction rate of hydrogen into the silicon wafer body is reduced, the concentration content of free hydrogen at the interface is sequentially reduced, and the penetration angle of ultraviolet light is reduced, so that the ultraviolet attenuation resistance of the cell is realized.

Methods of depositing silicon-containing layers in the formation of semiconductor devices are described. The methods include a thermal chemical vapor deposition (CVD) process or a thermal atomic layer deposition (ALD) process without the use of plasma. Some methods include exposing a semiconductor substrate to a silicon-containing precursor, an oxygen-containing reactant, and an initiator compound to deposit a silicon oxide layer. Some methods include exposing a semiconductor substrate to a silicon-containing precursor, a nitrogen-containing reactant, and an initiator compound to deposit a silicon nitride layer. Some methods include exposing a semiconductor substrate to a silicon-containing precursor, an oxygen-containing reactant, a nitrogen-containing reactant, and an initiator compound to deposit a silicon oxynitride layer.

A method for fabricating a surface acoustic wave (SAW) device includes the steps of forming a buffer layer on a substrate, forming a high velocity layer on the buffer layer, forming a medium velocity layer on the high velocity layer, forming a low velocity layer on the medium velocity layer, forming a piezoelectric layer on the low velocity layer, and forming an electrode on the piezoelectric layer. Preferably, the buffer layer includes silicon oxide, the high velocity layer includes graphene, the medium velocity layer includes silicon oxynitride, and the low velocity layer includes titanium oxide.

The present disclosure provides an ultrathin silicon oxynitride interface material, a tunnel oxide passivated structure and preparation methods and applications thereof. The ultrathin silicon oxynitride interface material is an SiON film with a thickness of 1nm to 4nm, and the percentage content of N atoms in the SiON film is 1% to 40%. The ultrathin silicon oxynitride interface material of the present disclosure has the characteristics of high nitrogen content. Compared with silicon oxide, the diffusion rate of boron in the SiON film is low, which effectively reduces the damaging effect of boron on the SiON film, improves the integrity of the SiON film and maintains the chemical passivation effect. The SiON film with high nitrogen concentration can noticeably lower the concentration of boron on the silicon surface so as to lessen the boron-induced defects. Furthermore, the SiON film has an energy band structure approximate to silicon nitride and has a small valence band offset, which helps hole transport, increases the hole transport efficiency and hole selectivity, and further improves the passivation quality and reduces the contact resistivity.

The present invention provides a multi-layer doping source structure, and a high-quality emitter and a controllable preparation method therefor. The multi-layer doping source structure comprises a dielectric layer, a nitrogen silicide layer and a doping source layer, which are stacked on the front surface of a crystalline silicon substrate, wherein the dielectric layer is a silicon oxide film or a silicon oxynitride film, the doping source layer is boron-doped amorphous silicon doped with functional elements or phosphorus-doped amorphous silicon doped with functional elements, and the functional elements doped in the doping source layer are carbon and / or nitrogen. In the present invention, the doping source structure is composed of the dielectric layer, a nitrogen silicide and boron- / phosphorus-doped amorphous silicon doped with functional elements; the multi-layer doping source structure has both a strong laser absorption capability and a high boron or phosphorus doping concentration, thereby facilitating a reduction in the laser power and the illumination time required by a laser selective emitter technique; moreover, such a multi-layer doping source structure is favorable for reducing the surface boron concentration, decreasing defects and improving the passivation effect of an emitter, and therefore an improvement in battery efficiency can be promoted.

The invention relates to the technical field of solar cells, in particular to a solar cell and a preparation method thereof, which can improve the passivation performance, the light utilization rate and the antireflection performance of the solar cell to the greatest extent while giving consideration to the ultraviolet attenuation resistance of the solar cell. A solar cell includes a substrate and a first optical adjustment layer; the first optical adjustment layer comprises a first sub-layer, a second sub-layer, a third sub-layer, a silicon oxynitride layer and a first silicon oxide layer which are sequentially stacked in the direction gradually away from the substrate; the refractive index of the first sub-layer is 2.3-2.42, the refractive index of the second sub-layer is 2.12-2.2, the refractive index of the third sub-layer is 2.0-2.1, and the thickness ratio of the first sub-layer to the second sub-layer to the third sub-layer is (10-15): (6-10): (16-24); the refractive index of the silicon oxynitride layer is 1.75-2.0, the refractive index of the first silicon oxide layer is 1.54-1.75, and the thickness ratio of the silicon nitride layer to the silicon oxynitride layer to the first silicon oxide layer is (32-49): (18-26): (10-15).

The present application provides an LED chip based on an alumina-silica composite substrate and a fabrication method thereof. The LED chip comprises an alumina-silica composite PSS substrate, a composite buffer layer and an LED structural layer, wherein the composite buffer layer is epitaxially grown on the alumina-silica composite PSS substrate, and the LED structural layer is epitaxially grown on the composite buffer layer. The composite buffer layer comprises: an aluminium oxynitride / aluminium nitride layer and a silicon oxynitride layer, wherein the alumina in the alumina-silica composite PSS substrate is covered with the aluminium oxynitride / aluminium nitride layer, and the silica in the alumina-silica composite PSS substrate is covered with the aluminium oxynitride / aluminium nitride layer and the silicon oxynitride layer in a staggered manner.

The topcon battery comprises an n-type silicon substrate, and a P-type emitting electrode, a first tunneling oxide layer, a local POLY layer, a first aluminum oxide passivation layer, a first silicon oxide layer, a first silicon oxynitride layer, a silicon nitride anti-reflection layer and a first silk-screen printing layer are sequentially arranged on the front face of the n-type silicon substrate. And a second tunneling oxide layer, a POLY layer, a second aluminum oxide passivation layer, a second silicon dioxide layer, a second silicon oxynitride layer, a third silicon nitride layer and a second silk-screen printing layer are sequentially arranged on the back surface. According to the invention, optimization is carried out by adopting a film layer superposition passivation principle, and the TOPCon efficiency and reliability are improved.

The invention relates to a manufacturing method of a silicon oxynitride film layer and a semiconductor device. The method comprises the following steps: step A, carrying out chemical vapor deposition on SiH4 and N2O in a reaction cavity of a deposition machine table to form the silicon oxynitride film layer; and step B, increasing the flow of the N2O, reducing the flow of the SiH4, and increasing the power of the deposition machine table to continue the reaction, so that the thickness of the silicon oxynitride film layer reaches the required thickness. The process for forming the silicon oxynitride film layer is divided into two steps: step 1, carrying out reaction on SiH4 by using small-flow N2O to form an N2O deposition atmosphere; in the second step, high-flow N2O and high power are adopted for surface treatment of the silicon oxynitride film layer, SiH4 and N2O are incompletely reacted, so that Si-H bonds formed on the surface of the silicon oxynitride film layer are converted into relatively stable Si-O bonds, and the bulge defect caused by the fact that the Si-H bonds adsorb small particles can be avoided.

Silicon Photonics is a candidate technology for adding integrated optics functionality, either passive or active optical waveguides) to integrated circuits by leveraging the economies of scale of the CMOS microelectronics industry and using materials for the waveguide core such as silicon nitride (SiXNY) and silicon oxynitride (SiOXN1-X) for example. Microelectromechanical systems (MEMS) provide for movable platforms relative to the substrate allowing additional functionality to be added to a silicon circuit but also Silicon Photonics. Accordingly, by combining “fixed” waveguides formed upon the substrate with “movable” waveguides formed upon one or more movable platforms the inventors have established a series of Integrated Optics MEMS (IO-MEMS) based on Silicon Photonics. Such IO-MEMS include optical switches, optical attenuators, optical gates, optical switch matrices, configurable wavelength division multiplexer / demultiplexer devices, etc. exploiting both platforms and deformable beams.

A semiconductor device according to an embodiment includes a channel layer; a barrier layer above the channel layer and including a material having a different energy band gap than the channel layer; a gate electrode above the barrier layer; a gate semiconductor layer between the barrier layer and the gate electrode; a source electrode and a drain electrode on respective sides of the gate electrode and on respective sides of the channel layer and the barrier layer; a field dispersion layer connected to the source electrode and on the gate electrode; and a protection layer between barrier layer and the field dispersion layer, wherein the protection layer includes a first protection layer above the barrier layer and including silicon oxide, and a second protection layer positioned above the first protection layer and including silicon oxynitride.

A pellicle membrane is formed from a core layer and two capping layers of specified structure. In some embodiments, the core layer includes a high percentage of the Mo3Si crystal phase. In other embodiments, the capping layers comprise silicon oxynitride or silicon carbon nitride. The resulting pellicle membrane has a combination of high transmittance for EUV light and low reflectivity of both EUV and DUV light.

The utility model relates to the technical field of solar cells, in particular to a passivation contact structure, a solar cell and a photovoltaic module. The passivation contact structure comprises a dielectric layer which is a silicon oxynitride layer, and the thickness of the dielectric layer is 1.2 nm to 3 nm; the doping layer is arranged on the dielectric layer, and the thickness of the doping layer ranges from 30 nm to 80 nm; wherein the doped layer comprises a first doped polycrystalline silicon layer, a silicon oxide layer and a second doped polycrystalline silicon layer, the first doped polycrystalline silicon layer, the silicon oxide layer and the second doped polycrystalline silicon layer are sequentially arranged in the direction away from the dielectric layer, the first doped polycrystalline silicon layer and the second doped polycrystalline silicon layer are doped polycrystalline silicon layers doped with doping elements, and the thickness of the silicon oxide layer ranges from 1.5 nm to 3 nm. The passivation contact structure can improve the short-circuit current, optimize the passivation performance and improve the photoelectric conversion efficiency of the solar cell.

The present disclosure provides embodiments of semiconductor structures and method of forming the same. An example semiconductor structure includes a first source / drain feature and a second source / drain feature and a hybrid fin disposed between the first source / drain feature and the second source / drain feature and extending lengthwise along a first direction. The hybrid fin includes an inner feature and an outer layer disposed around the inner feature. The outer layer includes silicon oxycarbonitride and the inner feature includes silicon carbonitride.

The invention relates to a back passivation structure capable of reducing phosphorus internal expansion. The back passivation structure comprises an N-type crystal silicon wafer, and a tunneling oxide layer, an intrinsic amorphous silicon layer, a silicon oxynitride layer and a phosphorus-doped polycrystalline silicon layer which are sequentially arranged on the back surface of the N-type crystal silicon wafer. According to the back passivation structure capable of reducing phosphorus internal expansion, in the preparation process, P atoms can be diffused towards the silicon substrate after high-temperature crystallization, the silicon oxynitride layer serves as a first barrier layer, silicon oxynitride has higher barrier efficiency on the P atoms compared with silicon oxide, most of the P atoms can be effectively blocked, and the performance of the silicon oxynitride layer is improved. The intrinsic amorphous silicon layer serves as a second barrier layer, P atoms which are not blocked by the silicon oxynitride layer can be subjected to P doping with intrinsic amorphous silicon and are converted into doped polycrystalline silicon with low P concentration, and the tunneling oxide layer serves as the last barrier layer to further block the P atoms, so that the P atoms can be effectively prevented from being internally expanded to a crystalline silicon substrate, surface recombination is reduced, and the performance of the crystalline silicon is improved. Therefore, the cell conversion efficiency is improved.

The invention discloses a superhard film layer and a preparation method thereof. The superhard film layer comprises a base layer; the wear-resistant layer is arranged at the top of the base layer and is used for enhancing scratch resistance and fatigue resistance; the silicon oxynitride layer is arranged at the top of the wear-resistant layer and is used for adjusting the hardness and structural compatibility between different film layers; the titanium and zirconium doped silicon nitride layer is arranged at the top of the silicon oxynitride layer; the hydrogen-containing gradient silicon oxynitride layer is arranged on the top of the titanium-zirconium-doped silicon nitride layer, titanium, zirconium and hydrogen elements are introduced into the film layer, and the gradient film layer design is adopted, so that the hardness, the wear resistance and the corrosion resistance of the film layer are remarkably improved. A hardness test shows that the hardness of the prepared super-hard film layer is remarkably improved compared with that of a traditional film layer, and the prepared super-hard film layer can effectively resist scraping and abrasion in daily use and improve the service life and imaging stability of a lens in practical application such as a camera lens.

The present application discloses a flash memory, wherein a gate dielectric layer of a storage transistor comprises a tunneling dielectric layer, a storage dielectric layer, and a barrier dielectric layer stacked in sequence. The storage dielectric layer includes a first silicon nitride layer, a second interface layer, and a third silicon nitride layer stacked in sequence. The material for the second interface layer is silicon oxynitride. With the storage transistor in a programming state, programming electrons are stored in the defect of the first silicon nitride layer and the defect of the third silicon nitride layer, and the outflow of the programming electrons out of the storage dielectric layer is reduced by means of the feature that the width of band gap of silicon oxynitride is greater than that of silicon nitride. The present application also discloses a method of making a flash memory.

The present invention provides a passivation film structure capable of achieving both passivation and surface doping, and a preparation method therefor and the use thereof. The passivation film structure comprises a nano-dielectric layer, a silicide layer and a hydrogen-rich dielectric layer, which are sequentially stacked on a surface of a silicon substrate, wherein the nano-dielectric layer is made of a hydrogenated silicon oxide thin film or a hydrogenated silicon oxynitride thin film, the silicide layer is made of a carbon-containing and / or nitrogen-containing boron / phosphorus-doped hydrogenated silicon thin film, and the hydrogen-rich dielectric layer is made of one or more of a laminated thin film selected from a hydrogenated aluminum oxide thin film, a hydrogenated silicon nitride thin film, a hydrogenated silicon oxide thin film and a hydrogenated silicon oxynitride thin film. The passivation film structure of the present invention has good passivation performance, and can achieve a good passivation effect on polished and textured silicon wafers or boron / phosphorus diffused emitters; moreover, the passivation film structure contains boron / phosphorus, and can achieve surface doping on silicon wafers during the preparation process of the passivation film, without requiring an additional doping process.

A solar cell, a method for producing a solar cell and a solar cell module are provided. The solar cell includes: a substrate having a front surface and a rear surface opposite to the front surface; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed on the front surface and in a direction away from the front surface; wherein the first passivation layer includes a dielectric material; the second passivation layer includes a first silicon nitride SimNn material, and a ratio of n / m is 0.5˜1; the third passivation layer includes a silicon oxynitride SiOiNj material, and a ratio of j / i is 0.1˜0.6; and a tunneling oxide layer and a doped conductive layer sequentially formed on the rear surface and in a direction away from the rear surface, wherein the doped conductive layer and the substrate have a doping element of a same conductivity type.

The invention belongs to the technical field of wet electronic chemicals, and particularly relates to a buffer oxide etching solution (BOE) with high selection ratio of silicon dioxide (SiO2) to silicon oxynitride (SiOxNy) in semiconductor manufacturing, and the etching solution comprises the following components in percentage by mass: 0-20% of HF, 20-40% of NH4F, 0.01-0.05% of an impregnating compound, 0.005-0.01% of an additive and the balance of ultrapure water. The wetting agent is introduced, so that the wettability of the silicon dioxide film layer can be improved, and the etching roughness is improved; meanwhile, after 2-(2-(2-hydroxyethoxy)-ethoxy)-ethyl phosphonic acid is added, a phosphonic acid group can form coordination with a Si-N bond in silicon oxynitride, and the silicon oxynitride film etching selection ratio of silicon dioxide can be remarkably increased under the condition that the silicon dioxide etching rate is not reduced. The etching liquid is stable, the solution is clear and transparent, and the addition of the additive can reduce the surface tension and improve the infiltration and undercutting capabilities of the etching liquid.

A heat ray shielding film comprising a glass substrate, a first layer, and a second layer, wherein: the first layer contains at least one substance selected from tungsten oxides represented by general formula WO3-x (0≤x≤0.28), silicon oxynitrides represented by general formula SiOaNb, and aluminum oxide; the second layer contains tungsten bronze; and the layers are arranged in the order of the first layer and the second layer, with the first layer being closest to the glass substrate.

A lens includes a lens portion, an anti-reflection (AR) coating layer disposed on a surface of the lens portion, and a water-repellent layer disposed on a surface of the AR coating layer. The water-repellent layer includes an inorganic layer having a plurality of pores and an organic layer at least partially disposed in the plurality of pores. The inorganic layer includes silicon oxynitride (SiOxNy).

The flexible substrate structure of the OLED comprises a porous generation layer and a PI layer from bottom to top, the thickness of the porous generation layer is 1-2 microns; the thickness of the PI layer is larger than that of the porous generation layer, and the thickness of the PI layer ranges from 2 micrometers to 5 micrometers. An inorganic layer is further arranged on the PI layer, and the thickness of the inorganic layer ranges from 0.2 micrometer to 0.3 micrometer. The inorganic layer is made of one of silicon oxide, silicon nitride or silicon oxynitride. According to the utility model, the endothermic reaction of the porous generation layer is utilized to block the high temperature generated by the laser acting on the PI, so that the OLED device is protected from being damaged by the high temperature, the porous generation layer releases carbon dioxide through decomposition reaction, local small pores are formed in a stripping interface, and the mechanical stripping force between the PI and the glass substrate is reduced. The inorganic layer improves the water-oxygen barrier effect of the substrate on the device.

To provide a specific silylamine compound useful as a precursor in vapor deposition of a silicon-containing material on the surface of a microelectronic device, a method for preparing the same, and a method for depositing a silicon-containing film on a microelectronic device substrate.SOLUTION: The silylamine compound is represented by general formula (I). The compounds can be utilized with an optional co-reactant to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, silicon oxycarbonitride (SiOCN), silicon carbonitride (SiCN), and silicon carbide.SELECTED DRAWING: Figure 1

The present disclosure provides a solar cell and a manufacturing method therefor, belonging to the technical field of photovoltaics. The manufacturing method for a solar cell includes: providing a semi-finished silicon wafer, and forming a first silicon oxide layer and a second silicon oxide layer respectively on a front side and a back side of the semi-finished silicon wafer through an atomic layer deposition process. The semi-finished silicon wafer includes at least one silicon nitride layer, an aluminum oxide layer, a silicon layer, at least one silicon nitride layer, a silicon oxynitride layer, and a third silicon oxide layer arranged in sequence along a thickness direction thereof. The first silicon oxide layer is bound to a surface of the third silicon oxide layer, and the second silicon oxide layer is bound to a surface of the silicon nitride layer. The manufacturing method of the present disclosure can form dense silicon oxide layers respectively on the front and back sides of the semi-finished silicon wafer through the atomic layer deposition process, which effectively blocks alkali metal ions from the glass of the module from passing through the films / layers of the solar cell and into the silicon wafer to damage the PN junction, thereby enhancing the PID resistance of the solar cell.

Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon nitride, silicon oxide, silicon oxynitride, a carbon-doped silicon nitride, a carbon-doped silicon oxide, or a carbon doped silicon oxynitride film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using a compound comprising a carbon-carbon double or carbon-carbon triple bond. The plasma source employed comprises both a remote plasma source and an in-situ plasma source operating in combination.