143 results about "Silicon oxynitride" patented technology

The invention belongs to the technical field of photovoltaic wet etching, and particularly relates to a low-concentration hydrofluoric acid composite etching solution and a preparation method and an etching process thereof, and the low-concentration hydrofluoric acid composite etching solution comprises the following components in percentage by mass: 5%-10% of hydrofluoric acid, 2%-5% of an etching additive and the balance of water; wherein the etching additive comprises the following components in percentage by mass: 8%-25% of a strong oxidant, 2%-5% of an etching accelerant, 0.5%-2% of an interface modification and mass transfer accelerant, 0.1%-3% of a product control and stabilizer, 0.1%-2% of an equipment compatible corrosion inhibitor and the balance of water; the strong oxidant is used for oxidizing silicon nitride to form a silicon oxynitride transition layer, the etching accelerant is used for providing HF molecules and HF2-ions, and the product control and stabilizing agent is used for complexing SiF62-ions generated by etching.

Silicon Photonics is a candidate technology for adding integrated optics functionality, either passive or active optical waveguides) to integrated circuits by leveraging the economies of scale of the CMOS microelectronics industry and using materials for the waveguide core such as silicon nitride (SiXNY) and silicon oxynitride (SiOXN1-X) for example. Microelectromechanical systems (MEMS) provide for movable platforms relative to the substrate allowing additional functionality to be added to a silicon circuit but also Silicon Photonics. Accordingly, by combining “fixed” waveguides formed upon the substrate with “movable” waveguides formed upon one or more movable platforms the inventors have established a series of Integrated Optics MEMS (IO-MEMS) based on Silicon Photonics. Such IO-MEMS include optical switches, optical attenuators, optical gates, optical switch matrices, configurable wavelength division multiplexer / demultiplexer devices, etc. exploiting both platforms and deformable beams.

The present application discloses a flash memory, wherein a gate dielectric layer of a storage transistor comprises a tunneling dielectric layer, a storage dielectric layer, and a barrier dielectric layer stacked in sequence. The storage dielectric layer includes a first silicon nitride layer, a second interface layer, and a third silicon nitride layer stacked in sequence. The material for the second interface layer is silicon oxynitride. With the storage transistor in a programming state, programming electrons are stored in the defect of the first silicon nitride layer and the defect of the third silicon nitride layer, and the outflow of the programming electrons out of the storage dielectric layer is reduced by means of the feature that the width of band gap of silicon oxynitride is greater than that of silicon nitride. The present application also discloses a method of making a flash memory.

The invention belongs to the technical field of wet electronic chemicals, and particularly relates to a buffer oxide etching solution (BOE) with high selection ratio of silicon dioxide (SiO2) to silicon oxynitride (SiOxNy) in semiconductor manufacturing, and the etching solution comprises the following components in percentage by mass: 0-20% of HF, 20-40% of NH4F, 0.01-0.05% of an impregnating compound, 0.005-0.01% of an additive and the balance of ultrapure water. The wetting agent is introduced, so that the wettability of the silicon dioxide film layer can be improved, and the etching roughness is improved; meanwhile, after 2-(2-(2-hydroxyethoxy)-ethoxy)-ethyl phosphonic acid is added, a phosphonic acid group can form coordination with a Si-N bond in silicon oxynitride, and the silicon oxynitride film etching selection ratio of silicon dioxide can be remarkably increased under the condition that the silicon dioxide etching rate is not reduced. The etching liquid is stable, the solution is clear and transparent, and the addition of the additive can reduce the surface tension and improve the infiltration and undercutting capabilities of the etching liquid.

A heat ray shielding film comprising a glass substrate, a first layer, and a second layer, wherein: the first layer contains at least one substance selected from tungsten oxides represented by general formula WO3-x (0≤x≤0.28), silicon oxynitrides represented by general formula SiOaNb, and aluminum oxide; the second layer contains tungsten bronze; and the layers are arranged in the order of the first layer and the second layer, with the first layer being closest to the glass substrate.

A lens includes a lens portion, an anti-reflection (AR) coating layer disposed on a surface of the lens portion, and a water-repellent layer disposed on a surface of the AR coating layer. The water-repellent layer includes an inorganic layer having a plurality of pores and an organic layer at least partially disposed in the plurality of pores. The inorganic layer includes silicon oxynitride (SiOxNy).

To provide a specific silylamine compound useful as a precursor in vapor deposition of a silicon-containing material on the surface of a microelectronic device, a method for preparing the same, and a method for depositing a silicon-containing film on a microelectronic device substrate.SOLUTION: The silylamine compound is represented by general formula (I). The compounds can be utilized with an optional co-reactant to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, silicon oxycarbonitride (SiOCN), silicon carbonitride (SiCN), and silicon carbide.SELECTED DRAWING: Figure 1

The invention discloses a TOPCON battery front passivation structure for improving PID, and relates to the technical field of battery preparation, the TOPCON battery front passivation structure comprises an N-type silicon substrate, and a high-thickness aluminum oxide passivation film, an ultrathin silicon oxynitride film, a silicon nitride film layer, a silicon oxynitride film layer and a silicon oxide film are sequentially laminated from inside to outside, the silicon nitride film layer sequentially comprises a bottom-layer high-refraction silicon nitride film, a secondary-outer-layer silicon nitride film and an outermost-layer silicon nitride film from inside to outside, the silicon oxynitride film layer sequentially comprises a bottom-layer silicon oxynitride film and an outer-layer silicon oxynitride film from inside to outside, and the refractive index of the bottom-layer high-refraction silicon nitride film is 2.28-2.34. The refractive index of the bottom-layer high-refraction silicon nitride film is controlled by adjusting the nitrogen-silicon ratio, and the nitrogen-silicon ratio is 1: 3.3 or 1: 3.5. According to the front passivation structure of the TOPCON battery, metal ions and water vapor are effectively prevented from diffusing and entering a PN junction, reduction of minority carrier recombination loss is facilitated, performance degradation caused by PID can be relieved, and the open-circuit voltage and the short-circuit current are improved.

The present application discloses a thin film transistor and an array substrate. The thin film transistor includes a gate electrode, a source electrode, and a drain electrode, and at least one of the gate electrode, the source electrode, or the drain electrode is a composite film layer. The composite film layer includes a metal layer, a low reflection functional layer, and an alloy layer which are arranged in layers. The alloy layer covering a surface of the low reflection functional layer can enhance stability of the low reflection functional layer. Because adhesion between the alloy layer and dielectric layers such as silicon oxide, silicon nitride, and silicon oxynitride is stronger than that of the low reflection functional layer, the bulge phenomenon is not easy to occur under a high temperature environment.

The application discloses a kind of refractory mortar for blast furnace ceramic cup and its preparation method and construction method, belong to refractory mortar technical field.The refractory mortar raw material components are as follows by mass percentage: microporous corundum fine powder 0.074-0mm 25-35%; active alumina powder 25-30%; silicon oxynitride microcrystalline powder 5-8%; alumina fiber 10-20%; silicon-aluminum alloy powder 10-15%; carbon black N990 5-8%; polyacrylic acid ammonium salt dispersing agent 0.5-1.5%; acidic zirconium dioxide sol (plus) 8-10%.The refractory mortar has good fluidity, simple and efficient construction method, can fully fill the blast furnace ceramic cup brick joint, and the brick joint can meet the construction requirements at 1.5mm, effectively resists the penetration and erosion of high-temperature molten iron from the brick joint caused by oversized joint and loose joint mortar.

The invention relates to a graphite boat and a preparation method thereof, and a deposition method of a battery piece pre-finished product. The graphite boat comprises a saturated graphite boat, a first silicon nitride film, a silicon oxynitride film and a silicon oxide film, the first silicon nitride film, the silicon oxynitride film and the silicon oxide film are sequentially stacked on the surface of the saturated graphite boat, the porosity of the first silicon nitride film is 27%-33%, and the ratio of the total thickness of the first silicon nitride film and the silicon oxide film to the thickness of the silicon oxynitride film is 2.5: 1-3.5: 1. And the refractive index of the silicon oxide film is 1.45-1.50. According to the graphite boat, the problem of edge black at the air inlet position of the solar cell when a new graphite boat is on line can be prevented, and the yield and the production stability are remarkably improved.

Silicon Photonics is a candidate technology for adding integrated optics functionality, either passive or active optical waveguides) to integrated circuits by leveraging the economies of scale of the CMOS microelectronics industry and using materials for the waveguide core such as silicon nitride (SiXNY) and silicon oxynitride (SiOXN1-X) for example. Microelectromechanical systems (MEMS) provide for movable platforms relative to the substrate allowing additional functionality to be added to a silicon circuit but also Silicon Photonics. Accordingly, by combining “fixed” waveguides formed upon the substrate with “movable” waveguides formed upon one or more movable platforms the inventors have established a series of Integrated Optics MEMS (IO-MEMS) based on Silicon Photonics. Such IO-MEMS include optical switches, optical attenuators, optical gates, optical switch matrices, configurable wavelength division multiplexer / demultiplexer devices, etc. exploiting both platforms and deformable beams.

The invention discloses an electronic component and a manufacturing method thereof, the electronic component comprises a device substrate and an insulating layer covering the surface of the device substrate, and the insulating layer comprises a silicon oxide layer growing on the surface layer of the device substrate and a nitrogen-rich silicon oxynitride layer formed on the surface of the silicon oxide layer. The manufacturing method of the electronic component comprises an insulating layer generation step: firstly growing a layer of silicon oxide on the surface of a device substrate, and then introducing nitrogen-containing gas at high temperature to carry out annealing treatment, so that nitrogen atoms are doped into the silicon oxide layer, and a silicon oxynitride layer with a nitrogen-rich surface is formed. The silicon oxynitride and the silicon oxide can give full play to respective advantages, and the silicon oxynitride and the silicon oxide have the advantages of being high in insulating layer uniformity, good in stability, resistant to high temperature and corrosion and high in stability in the product using process.

In various aspects, methods of making a silicon carbide or silicon nitride from rice hull ash (RHA) byproduct are provided. A treated silica depleted rice hull ash product (SDRHA) comprising silicon oxide at ≤ about 65% by weight and carbon ≥ about 35 % by weight may be heated in an environment free of any additional carbon sources, but in an inert atmosphere, having a temperature of ≥ about 1,200°C to ≤ about 1,700°C for a carbothermal reaction that forms a product (e.g., nanocomposite product) comprising at least one of silicon carbide (SiC), silicon nitride (Si3N4), and silicon oxynitride (Si2N2O or non-stoichiometric SiNxO4-x, where x ranges from greater than 0 to less than 4). A negative electroactive material is also provided that includes silicon oxynitride (Si2N2O), which may be used in a lithium ion battery.

A catalytic composition and process for forming and utilizing same in alkane dehydrogenation. An organometallic active material is deposited onto a silicon derived support such as a silicon imidonitride or silicon oxynitride. The active material facilitates the heterolytic C—H bond cleavage across a metal oxide bond.

The invention relates to the technical field of optical waveguides, and particularly discloses a manufacturing method of an optical waveguide end face coupler and the optical waveguide end face coupler, in the process of manufacturing the optical waveguide end face coupler, a dielectric material, namely silicon oxynitride or silicon oxycarbide, is deposited on a siliceous substrate wafer through a CVD method in a CMOS process, in the manufacturing process, the manufacturing process can be connected with the manufacturing process of an electronic device, the high-refractive-index gradient layers of the lower gradient layer, the middle gradient layer and the upper gradient layer and the core layer are finally manufactured, and the effective refractive index is linearly changed in cooperation with a common insulating medium in the semiconductor technology, namely, the low-refractive-index gradient layers prepared from silicon dioxide, and the effective refractive index is changed in a linear mode. And based on the characteristic that the refractive indexes of the silicon oxynitride and the silicon oxycarbide are adjustable, the optical waveguide end face coupler which can adapt to a semiconductor photon-electron heterogeneous integrated scene, can be compatible to the manufacturing process of an electronic device and has a wide-range core cladding refractive index difference is finally obtained.

Disclosed in the present invention is a method for manufacturing a mirror-twin-structured integrated capacitor incorporating a low-noise and nonlinear-calibration process design. The method comprises the steps of: 1) growing a field oxide layer above a P-type well of an analog integrated circuit; 2) depositing a polycrystalline capacitor lower electrode plate polycrystalline film layer on a field oxide layer above an N-type well, and performing matched implantation doping; 3) growing a capacitor dielectric layer; 4) depositing a polycrystalline capacitor upper electrode plate polycrystalline film layer, and manufacturing a protective film layer and a protective structure. The mirror-twin-structured integrated capacitor incorporating a low-noise and nonlinear-calibration process design comprises a substrate, an N-type buried layer, a P-type buried layer, an epitaxial layer, an N-type well, a P-type well, a field oxide layer, a sacrificial oxide layer, a gate oxide layer, a polycrystalline thin film layer, a silicon dioxide dielectric layer, a silicon oxynitride dielectric layer, a low-dielectric-coefficient filling film layer, a metal interconnection film layer, and a passivation layer. The present invention reduces the impact of parasitic capacitance, substrate noise and crosstalk noise, and realizes the low noise characteristic of integrated capacitors.

The invention relates to an oxide semiconductor thin film transistor. The oxide semiconductor thin film transistor includes a gate electrode, a source electrode, a drain electrode, an oxide semiconductor layer connected to the source electrode and the drain electrode, and a gate insulating film between the gate electrode and the oxide semiconductor layer in a stacking direction. The oxide semiconductor layer includes a channel region. The gate insulating film includes a metal oxide film and a first insulating film made of silicon nitride and / or silicon oxynitride. A portion of the first insulating film is provided between the metal oxide film and the oxide semiconductor layer. In a plan view, at least a portion of a first end of the metal oxide film is located on the channel region and faces any one of the source electrode and the drain electrode.

The invention provides a gate oxide annealing method for reducing a gate oxide interface state. The method aims at solving the problem that the interface state density of a thin silicon oxynitride gate medium is high. The method comprises the following steps: carrying out first annealing treatment on a nitrided gate oxide layer in a nitrogen atmosphere; and after the first annealing treatment, re-oxidation treatment is carried out on the gate oxide layer in situ in a pure oxygen atmosphere. Through the in-situ re-oxidation treatment, a high-quality silicon dioxide thin layer is formed at the interface of the gate oxide layer and the silicon substrate, so that the dangling bond of the interface is effectively repaired, and the nitrogen concentration at the interface is reduced. According to the invention, the interface state density and gate oxide electric leakage can be significantly reduced, the equivalent oxide thickness is maintained basically unchanged, and the electrical performance and reliability of the semiconductor device are effectively improved.

This invention provides an end-face coupler and its formation method, comprising: a substrate; an isolation layer located on the surface of the substrate; a silicon oxynitride waveguide located on the surface of the isolation layer, the silicon oxynitride waveguide having a ring-shaped longitudinal section; a silicon nitride waveguide partially located within the ring-shaped silicon oxynitride waveguide, the silicon nitride waveguide being separated from the silicon oxynitride waveguide by a first dielectric layer, the silicon nitride waveguide within the ring-shaped silicon oxynitride waveguide having a tapered cross-section, and the width of the silicon nitride waveguide gradually increasing along the incident direction of light; and a second dielectric layer covering the ring-shaped silicon oxynitride waveguide. This forms a ring-shaped silicon oxynitride waveguide, with the silicon nitride waveguide located inside the ring, thus expanding the optical mode field of the end-face coupler and improving coupling efficiency. Furthermore, the tapered portion of the silicon nitride waveguide inside the ring-shaped silicon oxynitride waveguide allows the optical signal to gradually couple into the silicon nitride waveguide, preventing the optical signal from leaking into the first dielectric layer, thereby reducing light loss.

The utility model relates to the technical field of solar cells, and discloses a solar cell and a photovoltaic assembly. The functional layer is arranged on the silicon substrate, and the functional layer comprises at least one of a silicon nitride layer, a silicon oxynitride layer or a silicon oxide layer; the ultraviolet-proof layer is arranged on the surface of the side, away from the silicon substrate, of the functional layer, and the ultraviolet-proof layer is a zinc oxide layer. The solar cell has relatively high ultraviolet resistance, so that the long-term stability of the solar cell is ensured, the service life of the solar cell is prolonged, and the photoelectric conversion performance of the solar cell is improved.

The invention discloses a method for cleaning a semiconductor device and a shallow trench isolation structure, and belongs to the technical field of semiconductors, and the method comprises the steps: providing a semiconductor device which comprises a silicon substrate, a multilayer semiconductor structure is stacked on the silicon substrate, in the multilayer semiconductor structure, the surface layer is made of a silicon dioxide material, and the surface layer is made of a silicon oxide material; residues needing to be cleaned exist on the outer surface of the surface layer; processing the outer surface of the surface layer by adopting a plasma nitriding method, so that the outer surface of the surface layer is nitrided to form a silicon oxynitride layer; and etching the silicon oxynitride layer by adopting a sulfuric acid and hydrogen peroxide mixed solution, and stopping etching after the silicon oxynitride layer is removed by etching so as to clean residues on the outer surface of the surface layer. According to the method, silicon dioxide can be cleaned on the premise of controllable silicon dioxide loss.

The invention discloses a photoelectric device and a preparation method thereof, and the method comprises the steps: providing a transparent insulating substrate, forming a lithium niobate film on the substrate, and etching the lithium niobate film to form a lithium niobate waveguide; forming a first silicon oxide layer on the substrate and the lithium niobate waveguide to obtain a first wafer; providing a silicon substrate, sequentially forming a second silicon dioxide layer and a silicon oxynitride layer on the silicon substrate, and etching the silicon oxynitride layer to form a silicon oxynitride waveguide; forming a third silicon oxide layer on the silicon substrate and the silicon oxynitride waveguide to obtain a second wafer; bonding the first wafer and the second wafer and carrying out annealing treatment; the silicon substrate of the second wafer is removed, and the second silicon dioxide layer is thinned; and sequentially forming a thermal regulation resistor and an electrode to complete device preparation. Heterogeneous integration of the silicon oxynitride waveguide and the lithium niobate waveguide is realized, and a high-performance optical device is obtained.

This utility model discloses an OLED substrate encapsulation assembly, comprising: a substrate, a display functional layer fixedly connected to the top of the substrate, and a cover plate snapped onto the top of the substrate; and a stabilizing assembly, the stabilizing assembly including a frame adhesive, the frame adhesive being fixedly connected to the outer sides of both sides of the display functional layer. This utility model improves the adhesion between the frame adhesive and the substrate by utilizing the strong adhesion between the silicon oxynitride layer and the frame adhesive material, thereby improving the encapsulation efficiency of the frame adhesive. Simultaneously, the combination of slots and blocks enhances stability during the assembly of the substrate and the cover plate, preventing detachment and cracking. The frame adhesive further enhances the stability of the overall device assembly process. Furthermore, the electroactive polymer layer can deform under the influence of an electric field. During encapsulation, by controlling the electric field applied to the electroactive polymer layer, the electroactive polymer layer can use mechanical pressure to expel residual gas from the encapsulation cavity between the display functional layer and the cover plate.

A process for depositing a high quality smooth and continuous silicon-containing film comprising: a) providing at least one substrate in a reactor, b) heating the reactor to at least one temperature in the range of ambient temperature to about 750 DEG C, and optionally maintaining the reactor at a pressure of about 100 torr or less, c) introducing into the reactor at least one first silicon precursor comprising at least one organic amino group and at least one halide group and having the formula: SiHmXn (NR1R2) 4-m-n wherein m-0, 1, 2; m is 1, n-1, 2, 3, and m + n is less than 3; x is selected from the group consisting of Cl, Br and I; r1 and R2 are each independently selected from the group consisting of a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cycloalkyl group, a C2 to C6 dialkylamino group, an electron withdrawing group, and a C6 to C10 aryl group, to form a first silicon-containing layer, d) purging any unreacted precursor from the reactor with an inert gas, e) introducing a nitrogen source to react with the first silicon-containing layer to form a seed layer comprising at least one selected from the group consisting of silicon nitride and carbon-doped silicon nitride, f) purging the reactor with an inert gas, g) introducing into the reactor at least one second silicon precursor comprising a halogenated silicon-containing compound, the first silicon-containing layer comprises at least one selected from the group consisting of silicon nitride, carbon-doped silicon nitride, silicon oxynitride, and carbon-doped silicon oxynitride, h) purging the reactor with an inert gas, i) introducing a nitrogen source to react with the second silicon-containing layer to form silicon nitride or carbon-doped silicon nitride, and d) introducing a nitrogen source to react with the silicon nitride or carbon-doped silicon nitride to form a second silicon-containing layer comprising at least one selected from the group consisting of silicon nitride, carbon-doped silicon nitride and carbon-doped silicon oxynitride. And j) purging the reactor with an inert gas.

This invention provides a method for preparing silicon oxynitride ceramic riser tubes. The method includes: selecting ingredients, adding the ingredients to a stirred mill, ball milling for 22 to 26 hours to prepare a uniform ceramic slurry; aging the prepared ceramic slurry, degassing for 22 to 26 hours, and spray drying it through a spray drying tower to prepare ceramic powder with a particle size distribution; aging the prepared ceramic powder for more than 48 hours, homogenizing it for 30 minutes using a homogenizer, and adding molding additives; sintering the ceramic powder into a silicon oxynitride ceramic riser tube; processing the sintered silicon oxynitride riser tube to the designed size using a grinding machine, and packaging it into a warehouse after passing inspection. The silicon oxynitride ceramic riser tube preparation method provided by this invention, through optimized formula, sintering, ball milling, and molding processes, enables the riser tube to achieve a flexural strength of approximately 400-500 MPa, which fully meets the domestic demand for ceramic riser tubes.

The invention discloses a silicon oxynitride interferometer which comprises a first directional coupler, a second directional coupler, a first tapered waveguide, a second tapered waveguide, a first interference arm and a second interference arm which are formed on the basis of a silicon oxynitride platform, two ends of the first interference arm are respectively connected with the first directional coupler and the second directional coupler through the first tapered waveguide, and two ends of the second interference arm are respectively connected with the first directional coupler and the second directional coupler through the second tapered waveguide. The first interference arm and the second interference arm are different in width. The MZI interference arms with different widths are used for applying phase shift, and the structure does not need to bend waveguides, so that the occupied space can be reduced by one order of magnitude, and a higher integration level is realized.

In various aspects, methods of making a silicon carbide or silicon nitride from rice hull ash (RHA) byproduct are provided. A treated silica depleted rice hull ash product (SDRHA) comprising silicon oxide at ≤about 65% by weight and carbon ≥about 35% by weight may be heated in an environment free of any additional carbon sources, but in an inert atmosphere, having a temperature of ≥about 1,200° C. to ≤about 1,700° C. for a carbothermal reaction that forms a product (e.g., nanocomposite product) comprising at least one of silicon carbide (SiC), silicon nitride (Si3N4), and silicon oxynitride (Si2N2O or non-stoichiometric SiNxO4-x, where x ranges from greater than 0 to less than 4). A negative electroactive material is also provided that includes silicon oxynitride (Si2N2O), which may be used in a lithium ion battery.

The application discloses a photocuring silicon oxynitride ceramic slurry, a preparation method and a complex structure porous ceramic preparation method. The slurry comprises modified ceramic mixed powder obtained by mixing ceramic powder and a surface modifier and a dispersing agent and a premixed liquid. The mixed ceramic powder comprises ceramic powder and a sintering aid. The ceramic powder is silicon oxynitride powder. The sintering aid is yttrium oxide powder and aluminum oxide powder. The premixed liquid comprises a mixture and a photoinitiator. The mixture is a mixed liquid of bisphenol A type difunctional epoxy acrylate resin, difunctional aliphatic polyurethane acrylate resin, isobornyl methacrylate, trimethylolpropane triacrylate, dipentaerythritol hexaacrylate and 9,9-bis[4-(2-hydroxyethoxy)phenyl]fluorene. The photoinitiator is 2,4,6-trimethylbenzoyl phenyl phosphonate. The complex structure porous ceramic preparation method using the slurry comprises printing, debinding and sintering processes. The application realizes photocuring forming of silicon oxynitride ceramic complex parts and preparation of complex structure ceramics.

To provide a semiconductor device that can suppress the degradation of its characteristics. [Solution] The semiconductor device comprises a semiconductor substrate, a source region and a drain region arranged with a gap between them on the upper surface of the semiconductor substrate, a body region arranged between the source region and the drain region, a drift region arranged between the body region and the drain region, a gate insulating film provided on the body region, a gate electrode provided on the gate insulating film, an insulating film provided on the drift region, a silicon oxynitride film provided on the insulating film, and a silicon nitride film provided on the silicon oxynitride film.