8 results about "Hexachlorodisilane" patented technology

The application relates to a method for synthesizing and refining electronic-grade hexachloroethyldisilane, and specifically, trichlorosilane raw material is mixed with protective gas into a raw material buffer tank, a mixed gas obtained through the mixing is subjected to a catalytic synthesis reaction under the irradiation of an ultraviolet light source, a product obtained through the reaction is subjected to condensation separation, gaseous trichloromethane returns to the raw material buffer tank to continuously participate in the synthesis reaction, the mixed liquid in the cold trap is warmed and vaporized, hexachloroethyldisilane is obtained through two-step refining, and the purity of the product hexachloroethyldisilane can reach the electronic grade. The application takes trichlorosilane as the initial raw material, the price of the raw material is low; the photo-catalysis is used as the synthesis process, the synthesis process is simple, the reaction yield is high, energy is saved, and the environment is protected; the two-step method is used for refining and purifying the product, the depth of the refining and the efficiency of the refining are high, large-scale production is suitable, the monopoly of foreign enterprises is broken, and the application has important significance.

The utility model discloses a hexachlorodisilane pretreatment device, and relates to the technical field of semiconductors, through cooperation of a filtering device, a material receiving box, a material pushing mechanism, a compression box, an electric sealing door, a compression mechanism, an electric gate and other parts, hexachlorodisilane is pretreated by the filtering device, and physical impurities fall into the material receiving box below through a waste material outlet. The pushing mechanism pushes waste in the collecting box to the side, away from the waste outlet, of the collecting box. And when the waste materials need to be compressed, the electric sealing door is opened, the material collecting box communicates with the interior of the compression box, and the waste materials enter the compression box. And the compression mechanism compresses the waste materials entering the compression box, and after compression is completed, the electric gate is opened to discharge the compressed waste materials. Physical impurities generated in the hexachlorodisilane pretreatment process are collected, compressed and packaged, centralized treatment is facilitated, and environmental pollution is effectively avoided.

The present disclosure provides a system for purifying a hexachlorodisilane (HCDS) composition, the system including a storage unit configured to store a HCDS composition including impurities, a circulation pump configured to circulate the HCDS composition along a closed circulation loop, an adsorption purifier disposed in the closed circulation loop, the adsorption purifier including an adsorbent and configured to, in a first operating state, selectively adsorb impurities included in the HCDS composition and allow HCDS to pass therethrough, and a filter disposed at an outlet side of the adsorption purifier and configured to, in the first operating state, filter contamination included in the HCDS composition that has passed through the purifier.

The invention discloses a method for detecting the content of hexachlorodisiloxane and hexachlorodisilane in chlorosilane, and belongs to the technical field of polycrystalline silicon production byproduct detection, and the method comprises the following steps: selecting a thermal conductivity detector as a gas chromatograph detector, selecting hydrogen as carrier gas, and selecting a 5 + / -0.1 m polydimethylpolysiloxane packed column as a chromatographic column; the flow rate of the carrier gas is set to be 30 + / -5 mL / min, and the temperature rise procedure of the chromatographic column temperature is as follows: balancing for 4 minutes at 60 + / -5 DEG C, then heating to 150 + / -5 DEG C at the temperature rise rate of 8-10 DEG C / min, and balancing for 5 minutes; preparing a chlorosilane standard mixed solution; recording the peak areas of the hexachlorodisiloxane and the hexachlorodisilane standard solution in the chlorosilane standard mixed solution; recording the peak areas of hexachlorodisiloxane and hexachlorodisilane in the chlorosilane; and calculating the contents of hexachlorodisiloxane and hexachlorodisilane. The method provided by the invention can effectively separate and quantify hexachlorodisiloxane and hexachlorodisilane in the polycrystalline silicon production by-products.

Embodiments of the present disclosure generally relate to the field of semiconductor manufacturing processes, more particularly, to precursor chemistries and methods of depositing silicon-containing films for forming semiconductor devices. In one or more embodiments, a method includes co-flowing a silicon-containing precursor with a dopant precursor into a processing chamber at a temperature of 600° C. or less to deposit an epitaxial layer over a substrate disposed within the processing chamber. The silicon-containing precursor is selected from a list consisting of silane (SiH4), disilane (Si2H6), trisilane(Si3H8), tetrasilane (Si4H10), monochlorotrisilane (Si3H7Cl), diiodosilane (SiH2I2), and dibromosilane (SiH2Br2). The dopant precursor selected from a list consisting of phosphine (PH3), phosphorus trichloride (PCl3), phosphorus tribromide (PBr3), tert-butylphosphine (TBP), tri-tert-butylborane ((tBu)3B), tert-butylarsine (TBAs), arsenic trichloride (AsCl3), trisilylphosphine (TSP), triisopropylborane (iPr)3B, tert-butylsilane ((tBu)SiH3), isopropylsilane ((iPr)SiH3), tetrakis(tert-butyl)tin ((tBu)4Sn), tetrakis(isopropyl)tin ((iPr)4Sn), tetrakis(tert-butyl)germane ((tBu)4Ge), tetrakis(isopropyl)germane ((iPr)4Ge), germanium tetrachloride (GeCl4), carbon tetrachloride (CCl4), and hexachlorodisilane (Si2Cl6).

Embodiments of the present disclosure generally relate to the field of semiconductor manufacturing processes, more particularly, to precursor chemistries and methods of depositing silicon-containing films for forming semiconductor devices. In one or more embodiments, a method includes co-flowing a silicon-containing precursor with a dopant precursor into a processing chamber at a temperature of 600 °C or less to deposit an epitaxial layer over a substrate disposed within the processing chamber. The silicon-containing precursor is selected from a list consisting of silane (SiH4), disilane (Si2H6), trisilane(Si3H8), tetrasilane (Si4H10), monochlorotrisilane (Si3H7CI), diiodosilane (SiH2l2), and dibromosilane (SiH2Br2). The dopant precursor selected from a list consisting of phosphine (PH3), phosphorus trichloride (PCI3), phosphorus tribromide (PBr3), tert-butylphosphine (TBP), tri-tert-butylborane ((tBu)3B), tert-butylarsine (TBAs), arsenic trichloride (AsCI3), trisilylphosphine (TSP), triisopropylborane (iPr)3B, tert-butylsilane ((tBu)SiH3), isopropylsilane ((iPr)SiH3), tetrakis(tert-butyl)tin ((tBu)4Sn), tetrakis(isopropyl)tin ((iPr)4Sn), tetrakis(tert-butyl)germane ((tBu)4Ge), tetrakis(isopropyl)germane ((iPr)4Ge), germanium tetrachloride (GeCI4), carbon tetrachloride (CCI4), and hexachlorodisilane (Si2CI6).

The invention belongs to the technical field of catalyst preparation, and particularly relates to a Fe3S4 / FeS heterojunction composite catalyst and a preparation method and application thereof.A Joule heating technology is adopted to replace traditional tube furnace roasting, short-time thermal shock is conducted on a precursor, the preparation time is greatly shortened, energy consumption is reduced, meanwhile, the catalyst prepared through Joule heating is in a uniform spherical shape, and the preparation method is suitable for large-scale industrial production. More catalytic active sites can be exposed, and the catalytic performance is improved. The Fe3S4 / FeS heterojunction composite catalyst is utilized to catalyze reduction of hexachlorodisilane to prepare disilane, so that the selectivity and yield of disilane are remarkably improved.

The application provides a recovery method and recovery device of hexachloroethyldisilane, and the recovery method of hexachloroethyldisilane comprises the following steps: 1) performing first rectification treatment on chlorosilane solution to be recovered to obtain a first product; 2) performing second rectification treatment on the first product to obtain a second product; 3) performing adsorption treatment on the second product to obtain a third product; 4) performing photochemical reaction on a mixture comprising the third product, a chlorinating agent and a photocatalyst to obtain a fourth product; 5) performing third rectification treatment on the fourth product to obtain a fifth product; and 6) performing fourth rectification treatment on the fifth product to obtain hexachloroethyldisilane. The recovery method of hexachloroethyldisilane provided by the application can convert tetrachloroethyldisilane into hexachloroethyldisilane through photochemical reaction, and through multiple rectification treatment and adsorption treatment, the purification difficulty of hexachloroethyldisilane can be reduced, and the purity and recovery rate of hexachloroethyldisilane can be improved.