17 results about "Hexachlorodisilane" patented technology

The invention relates to the technical field of chemical production automatic control, in particular to a hexachlorodisilane automatic production control system and method. Data are corrected through the temperature compensation model, side reaction caused by inaccurate temperature is avoided, the temperature and pressure of the reaction kettle are adjusted through negative feedback of the self-adaptive temperature and pressure control model, a gain function is dynamically adjusted according to the reaction time, and the control precision is improved; on the basis of online component analysis, a mathematical regression analysis model is established, coefficients are determined through machine learning, and a production parameter optimization module is used for calculating the opening degree of a return valve and optimizing parameters of a rectifying tower so as to reduce by-products and guarantee the quality of hexachlorodisilane; according to a data analysis result, automatic safety inspection is automatically carried out, the explosion risk is quantitatively evaluated, leakage is detected and speculated through a leakage positioning algorithm, graded protection signals are matched, safety measures are executed, and production safety is guaranteed.

The application relates to a method for synthesizing and refining electronic-grade hexachloroethyldisilane, and specifically, trichlorosilane raw material is mixed with protective gas into a raw material buffer tank, a mixed gas obtained through the mixing is subjected to a catalytic synthesis reaction under the irradiation of an ultraviolet light source, a product obtained through the reaction is subjected to condensation separation, gaseous trichloromethane returns to the raw material buffer tank to continuously participate in the synthesis reaction, the mixed liquid in the cold trap is warmed and vaporized, hexachloroethyldisilane is obtained through two-step refining, and the purity of the product hexachloroethyldisilane can reach the electronic grade. The application takes trichlorosilane as the initial raw material, the price of the raw material is low; the photo-catalysis is used as the synthesis process, the synthesis process is simple, the reaction yield is high, energy is saved, and the environment is protected; the two-step method is used for refining and purifying the product, the depth of the refining and the efficiency of the refining are high, large-scale production is suitable, the monopoly of foreign enterprises is broken, and the application has important significance.

The utility model discloses a hexachlorodisilane pretreatment device, and relates to the technical field of semiconductors, through cooperation of a filtering device, a material receiving box, a material pushing mechanism, a compression box, an electric sealing door, a compression mechanism, an electric gate and other parts, hexachlorodisilane is pretreated by the filtering device, and physical impurities fall into the material receiving box below through a waste material outlet. The pushing mechanism pushes waste in the collecting box to the side, away from the waste outlet, of the collecting box. And when the waste materials need to be compressed, the electric sealing door is opened, the material collecting box communicates with the interior of the compression box, and the waste materials enter the compression box. And the compression mechanism compresses the waste materials entering the compression box, and after compression is completed, the electric gate is opened to discharge the compressed waste materials. Physical impurities generated in the hexachlorodisilane pretreatment process are collected, compressed and packaged, centralized treatment is facilitated, and environmental pollution is effectively avoided.

The invention provides a recovery method and recovery device of hexachlorodisilane, and the recovery method of hexachlorodisilane comprises the following steps: 1) carrying out first rectification treatment on a chlorosilane solution to be recovered to obtain a first product; 2) carrying out second rectification treatment on the first product to obtain a second product; 3) carrying out adsorption treatment on the second product to obtain a third product; 4) performing photochemical reaction on a mixture containing the third product, a chlorinating agent and a photocatalyst to obtain a fourth product; 5) performing third rectification treatment on the fourth product to obtain a fifth product; and 6) carrying out fourth rectification treatment on the fifth product to obtain hexachlorodisilane. According to the recovery method of hexachlorodisilane provided by the invention, tetrachlorodisilane can be converted into hexachlorodisilane through a photochemical reaction, and through multiple times of rectification treatment and adsorption treatment, not only can the purification difficulty of hexachlorodisilane be reduced, but also the purity and recovery rate of hexachlorodisilane can be improved.

The present disclosure provides a system for purifying a hexachlorodisilane (HCDS) composition, the system including a storage unit configured to store a HCDS composition including impurities, a circulation pump configured to circulate the HCDS composition along a closed circulation loop, an adsorption purifier disposed in the closed circulation loop, the adsorption purifier including an adsorbent and configured to, in a first operating state, selectively adsorb impurities included in the HCDS composition and allow HCDS to pass therethrough, and a filter disposed at an outlet side of the adsorption purifier and configured to, in the first operating state, filter contamination included in the HCDS composition that has passed through the purifier.

A method includes etching a semiconductor substrate to form a trench, and depositing a dielectric layer using an Atomic Layer Deposition (ALD) cycle. The dielectric layer extends into the trench. The ALD cycle includes pulsing Hexachlorodisilane (HCD) to the semiconductor substrate, purging the HCD, pulsing triethylamine to the semiconductor substrate, and purging the triethylamine. An anneal process is then performed on the dielectric layer.

The application discloses a purification device and method for hexachloroethyldisilane, which comprises electrode groups, is provided with a plurality of groups, and is used for removing metal impurities by redox reaction occurring on the positive and negative electrodes; the electrolytic impurity removal tank is of a closed structure, an inside of the electrolytic impurity removal tank is used for mounting the electrode groups, and the electrode groups are sequentially arranged along the flow direction of raw materials and are arranged in the electrolytic impurity removal tank; the side wall of the electrolytic impurity removal tank is provided with a liquid inlet, a liquid outlet, a protective gas interface and an exhaust port; a circulating pipeline is connected with the circulating liquid inlet and the circulating liquid outlet of the electrolytic impurity removal tank; and a circulating pump is arranged on the circulating pipeline and is used for providing driving force for the circulating flow of the hexachloroethyldisilane raw material. The scheme adopts the electrolysis mode, metal cations are reduced and deposited on the negative electrode, and the removal of metal ions is more comprehensive.

The invention discloses a method for detecting the content of hexachlorodisiloxane and hexachlorodisilane in chlorosilane, and belongs to the technical field of polycrystalline silicon production byproduct detection, and the method comprises the following steps: selecting a thermal conductivity detector as a gas chromatograph detector, selecting hydrogen as carrier gas, and selecting a 5 + / -0.1 m polydimethylpolysiloxane packed column as a chromatographic column; the flow rate of the carrier gas is set to be 30 + / -5 mL / min, and the temperature rise procedure of the chromatographic column temperature is as follows: balancing for 4 minutes at 60 + / -5 DEG C, then heating to 150 + / -5 DEG C at the temperature rise rate of 8-10 DEG C / min, and balancing for 5 minutes; preparing a chlorosilane standard mixed solution; recording the peak areas of the hexachlorodisiloxane and the hexachlorodisilane standard solution in the chlorosilane standard mixed solution; recording the peak areas of hexachlorodisiloxane and hexachlorodisilane in the chlorosilane; and calculating the contents of hexachlorodisiloxane and hexachlorodisilane. The method provided by the invention can effectively separate and quantify hexachlorodisiloxane and hexachlorodisilane in the polycrystalline silicon production by-products.

The utility model discloses a comprehensive utilization system for slag discharged by cold hydrogenation, which belongs to the technical field of polycrystalline silicon production and is characterized in that the slag discharged by cold hydrogenation is in a settling tank, supernatant liquid is filtered by a filter and then enters a distillation tower to be distilled, and partial distilled fraction enters a first rectifying tower to be rectified for the first time; the tower kettle produced liquid of the first rectifying tower enters a second rectifying tower (the middle upper part of the second rectifying tower is fed) for secondary rectification, and the tower top produced liquid of the second rectifying tower is discharged through a product outlet pipe to obtain high-purity hexachlorodisilane.

Embodiments of the present disclosure generally relate to the field of semiconductor manufacturing processes, more particularly, to precursor chemistries and methods of depositing silicon-containing films for forming semiconductor devices. In one or more embodiments, a method includes co-flowing a silicon-containing precursor with a dopant precursor into a processing chamber at a temperature of 600° C. or less to deposit an epitaxial layer over a substrate disposed within the processing chamber. The silicon-containing precursor is selected from a list consisting of silane (SiH4), disilane (Si2H6), trisilane(Si3H8), tetrasilane (Si4H10), monochlorotrisilane (Si3H7Cl), diiodosilane (SiH2I2), and dibromosilane (SiH2Br2). The dopant precursor selected from a list consisting of phosphine (PH3), phosphorus trichloride (PCl3), phosphorus tribromide (PBr3), tert-butylphosphine (TBP), tri-tert-butylborane ((tBu)3B), tert-butylarsine (TBAs), arsenic trichloride (AsCl3), trisilylphosphine (TSP), triisopropylborane (iPr)3B, tert-butylsilane ((tBu)SiH3), isopropylsilane ((iPr)SiH3), tetrakis(tert-butyl)tin ((tBu)4Sn), tetrakis(isopropyl)tin ((iPr)4Sn), tetrakis(tert-butyl)germane ((tBu)4Ge), tetrakis(isopropyl)germane ((iPr)4Ge), germanium tetrachloride (GeCl4), carbon tetrachloride (CCl4), and hexachlorodisilane (Si2Cl6).

The utility model relates to the technical field of hexachloroethyldisilane purification, especially relates to a kind of purification device of electronic grade hexachloroethyldisilane, including rectifying mechanism;Still include molecular sieve, and the material to be treated is entered HCDS purification after passing through molecular sieve and enters rectifying mechanism;Before entering rectification process, first pass through molecular sieve, molecular sieve preferentially adsorbs the hexachloroethyldisiloxane of more strong polarity, to reduce the energy consumption load of rear-end rectification system.

Embodiments of the present disclosure generally relate to the field of semiconductor manufacturing processes, more particularly, to precursor chemistries and methods of depositing silicon-containing films for forming semiconductor devices. In one or more embodiments, a method includes co-flowing a silicon-containing precursor with a dopant precursor into a processing chamber at a temperature of 600 °C or less to deposit an epitaxial layer over a substrate disposed within the processing chamber. The silicon-containing precursor is selected from a list consisting of silane (SiH4), disilane (Si2H6), trisilane(Si3H8), tetrasilane (Si4H10), monochlorotrisilane (Si3H7CI), diiodosilane (SiH2l2), and dibromosilane (SiH2Br2). The dopant precursor selected from a list consisting of phosphine (PH3), phosphorus trichloride (PCI3), phosphorus tribromide (PBr3), tert-butylphosphine (TBP), tri-tert-butylborane ((tBu)3B), tert-butylarsine (TBAs), arsenic trichloride (AsCI3), trisilylphosphine (TSP), triisopropylborane (iPr)3B, tert-butylsilane ((tBu)SiH3), isopropylsilane ((iPr)SiH3), tetrakis(tert-butyl)tin ((tBu)4Sn), tetrakis(isopropyl)tin ((iPr)4Sn), tetrakis(tert-butyl)germane ((tBu)4Ge), tetrakis(isopropyl)germane ((iPr)4Ge), germanium tetrachloride (GeCI4), carbon tetrachloride (CCI4), and hexachlorodisilane (Si2CI6).

The high-purity hexachlorodisilane purification device comprises a raw material tank, a first rectifying tower, a first buffer tank, a second rectifying tower, a second buffer tank and a finished product tank, the raw material tank is connected with the first rectifying tower through a pipeline; the top of the first rectifying tower is connected with a first condenser; one end of the first condenser is connected with the first rectifying tower through a pipeline, and the other end is connected with the first buffer tank through a pipeline; the first buffer tank is connected with the second rectifying tower through a pipeline; the top of the second rectifying tower is connected with a second condenser; one end of the second condenser is connected with the second rectifying tower through a pipeline, and the other end is connected with the second buffer tank through a pipeline; the second buffer tank is connected back to the second rectifying tower through a pipeline; the bottom of the second rectifying tower is connected with a finished product tank; the device is simple in structure, the preparation process is convenient, and high-purity hexachlorodisilane can be effectively obtained; and meanwhile, the operation energy consumption is low, the purification cost is reduced, tank explosion accidents are prevented, and the safety is high.

The invention belongs to the technical field of catalyst preparation, and particularly relates to a Fe3S4 / FeS heterojunction composite catalyst and a preparation method and application thereof.A Joule heating technology is adopted to replace traditional tube furnace roasting, short-time thermal shock is conducted on a precursor, the preparation time is greatly shortened, energy consumption is reduced, meanwhile, the catalyst prepared through Joule heating is in a uniform spherical shape, and the preparation method is suitable for large-scale industrial production. More catalytic active sites can be exposed, and the catalytic performance is improved. The Fe3S4 / FeS heterojunction composite catalyst is utilized to catalyze reduction of hexachlorodisilane to prepare disilane, so that the selectivity and yield of disilane are remarkably improved.

The present invention relates to the technical field of chemical production automatic control, and in particular to an automated production control system and method for hexachlorodisilane. The present invention corrects data through a temperature compensation model to avoid side reactions caused by inaccurate temperature, and utilizes an adaptive temperature and pressure control model for negative feedback regulation of the temperature and pressure of a reactor, dynamically adjusting a gain function according to reaction time to improve control accuracy. With the help of online component analysis, a mathematical regression analysis model is established, coefficients are determined using machine learning, a production parameter optimization module calculates the opening of a reflux valve, and distillation tower parameters are optimized to reduce by-products and ensure the quality of hexachlorodisilane. The present invention automatically carries out automatic safety inspections based on data analysis results, quantitatively assesses explosion risks, detects presumed leaks using a leak location algorithm, matches hierarchical protection signals, and executes safety measures to ensure production safety.

The application provides a recovery method and recovery device of hexachloroethyldisilane, and the recovery method of hexachloroethyldisilane comprises the following steps: 1) performing first rectification treatment on chlorosilane solution to be recovered to obtain a first product; 2) performing second rectification treatment on the first product to obtain a second product; 3) performing adsorption treatment on the second product to obtain a third product; 4) performing photochemical reaction on a mixture comprising the third product, a chlorinating agent and a photocatalyst to obtain a fourth product; 5) performing third rectification treatment on the fourth product to obtain a fifth product; and 6) performing fourth rectification treatment on the fifth product to obtain hexachloroethyldisilane. The recovery method of hexachloroethyldisilane provided by the application can convert tetrachloroethyldisilane into hexachloroethyldisilane through photochemical reaction, and through multiple rectification treatment and adsorption treatment, the purification difficulty of hexachloroethyldisilane can be reduced, and the purity and recovery rate of hexachloroethyldisilane can be improved.

The present invention relates to a treatment process for residue slurry during polycrystalline silicon production. Said treatment process comprises: carrying out solid-liquid separation on a solid-liquid mixed phase obtained after gas-liquid separation of residue slurry, so as to obtain a solid phase and a liquid phase; drying the solid phase, and performing acidic hydrolysis, filter pressing, drying and screening to obtain a solid phase containing silicon powder; reacting the solid phase containing silicon powder with hydrogen chloride, cooling same and recovering a cooled liquid phase; first performing light component removal on the liquid phase to recover trichlorosilane and silicon tetrachloride; then adding an auxiliary agent to the liquid phase obtained after the light component removal and reacting same; separating a liquid phase containing pentachlorodisilane, hexachlorodisilane, pentachlorodisiloxane and hexachlorodisiloxane; and subjecting the liquid phase obtained after the separation and hydrogen chloride to a cracking reaction, so as to generate trichlorosilane and silicon tetrachloride, and recovering same. The treatment process of the present invention can improve the material classified treatment capability and the amount of recovered materials of the residue slurry process.