63 results about "Hexachlorodisilane" patented technology

A composition and method of preparation, to provide silane compounds that are free of chlorine. The compounds are hexakis(monohydrocarbylamino)disilanes with general formula (I)

((R)HN)₃—Si—Si—(NH(R))₃  (I)

wherein each R independently represents a C₁ to C₄ hydrocarbyl. These disilanes may be synthesized by reacting hexachlorodisilane in organic solvent with at least 6-fold moles of the monohydrocarbylamine RNH₂ (wherein R is a C₁ to C₄ hydrocarbyl). Such compounds have excellent film-forming characteristics at low temperatures. These films, particularly in the case of silicon nitride and silicon oxynitride, also have excellent handling characteristics.

A method is provided for depositing a silicon-containing film on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed on a substrate by providing a substrate in a process chamber of a processing system, heating the substrate, and exposing a hexachlorodisilane (HCD) process gas to the substrate. The method can selectively deposit an epitaxial silicon-containing film on a silicon surface of a substrate or, alternately, non-selectively deposit a silicon-containing film on a substrate. A processing tool containing a processing system for forming a silicon-containing film on s substrate using a HCD process gas is provided.

A process for producing hexachlorodisilane comprising, condensing an exhaust gas discharged from a reactor for producing polycrystalline silicon from a chlorosilane and hydrogen to separate the hydrogen, distilling the resultant condensate to separate the unreacted chlorosilane and by-product silicon tetrachloride, and then further distilling to recover hexachlorodisilane, wherein tetrachlorodisilane can be recovered together with the hexachlorodisilane, and the hexachlorodisilane and tetrachlorodisilane recovered have a far higher purity than the conventional ones produced from metallic silicon.

A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is formed under a pressure between 10 Torr and 350 Torr.

The invention relates to a method for preparing a substrate material with a multilayer composite protective film, which comprises the following steps: putting the substrate material into a reaction chamber, and heating the substrate material until the temperature thereof is 100 to 500 DEG C; introducing trimethyl aluminum or Al (CH3) N (CH2) 5CH3 precursor into the reaction chamber within 0.2 to 0.5 seconds under the pressure of 0.1 to 10 Torr; introducing nitrogen or inert gas into the reaction chamber so as to remove the trimethyl aluminum or Al (CH3) N (CH2) 5CH3 residual gas which is not subjected to chemisorption by a substrate; under the pressure of 0.1 to 10 Torr, introducing ozone or vapor reactive gas into the reaction chamber within 0.2 to 0.5 seconds so as to deposit an alumina atom layer on the substrate, wherein the thickness of the alumina atom layer on the substrate is 2 to 100nm; and replacing the trimethyl aluminum or Al (CH3) N (CH2) 5CH3 precursor by using chlorosilane, hexachlorodisilane or tetraethyl orthosilicate as silicon source, then repeating the steps above, and covering a silicon dioxide layer on an alumina layer, wherein the thickness of the alumina layer is 2 to 100nm; and finally, obtaining the substrate material with a composite inorganic protective film in a Al2O3/SiO2 double-layer structure, wherein the thickness of the substrate material is 5 to 120nm. The method can precisely control the thickness of the film, wherein the thickness of the film can directly and precisely be controlled within a range of 1 to 100nm, and the film has excellent oxidation resistance and gas permeation resistance, and can control the ratio of Al2O3 to SiO2.

The invention relates to a device and a method for continuous recovery treatment of chlorosilane residual liquid, and particularly relates to a method and a device for recovering hexachlonxlisilane with extremely high value. According to the method, a filter, a primary tower, a hexachlonxlisilane light-component removal column, a hexachlonxlisilane heavy-component removal column, a silicon tetrachloride light-component removal column and a silicon tetrachloride heavy-component removal column are mainly included. The device and the method are especially applicable to treatment of dirt residual liquids such as cold hydrogenation slurry, distillation residues and distillation residues of synthesis procedures during production of polycrystalline silicon as well as treatment of residual liquids such as distillation residues of reduction procedures, distillation residues of thermal hydrogenation procedures or the mixture of both; and based on the device and the method, organic chlorosilane difficultly separating from silicon tetrachloride and titanium tetrachloride difficultly separating from hexachlonxlisilane can be removed, and hexachlonxlisilane with the purity of 99.7 percent can be recovered according to the method.

The invention aims to provide an intermittent technology and a device for treatment and recovery of chlorosilane residual liquid and residue thereof, especially a method and a device for recovering hexachlorodisilane with very high value. The invention puts forward an intermittent technical scheme for the circumstance of a small residual liquid treatment amount. The technology mainly involves a primary rectification tower and an intermittent rectification tower. The method and the device provided in the invention are particularly applicable to treatment of the cold hydrogenation slag slurry and rectification residual liquid in polysilicon production, the rectification residual liquid and other dirty residual liquids in a synthesis process, and are also applicable to the rectification residual liquid in a reduction process and the rectification residual liquid in a thermal hydrogenation process or mixed type residual liquids, etc. With the treatment technology disclosed in the invention, hexachlorodisilane with purity above 98% can be recovered.

Hexachlorodisilane is decomposed into hydrochloric acid, silicon dioxide and water by introducing hexachlorodisilane-containing flue gas into a reaction region without moistening the flue gas and by supplying oxygen-containing gas that also contains a small amount of moisture to the reaction region maintained at a temperature at which hexachlorodisilane decomposes.

In order to improve embeddability of an embedded insulating film to a filling portion to have a preferable embedded structure, the present invention provides a semiconductor device having an embedded structure in which an embedded insulating film is embedded in a filling portion formed in or on a substrate. The embedded structure includes an underlying insulating film containing a silicon nitride film formed on an inner wall of the filling portion by a chemical vapor deposition method using material gas containing hexachlorodisilane, and an embedded insulating film formed by filling in the filling portion via the underlying insulating film.

The invention provides a method for recycling hexachlorodisilane. The method includes steps of S1, filtering polycrystalline silicon residual liquid to obtain filtrate and filter residues with solid particles and metal polymer impurities; S2, primarily rectifying the filtrate and removing impurities with amorphous silicon and metal to obtain first tower top rectification liquid; S3, secondarily rectifying the first tower top rectification liquid and removing low-boiling substances with trichlorosilane and silicon tetrachloride to obtain second tower kettle rectification liquid; S4, rectifying the second tower kettle rectification liquid for the third time and removing silicon tetrachloride and hexachlorodisiloxane to obtain third tower kettle rectification liquid mainly with the hexachlorodisilane. The method has the advantages that the polycrystalline silicon residual liquid is filtered, and accordingly the solid particles and the metal polymer impurities in the polycrystalline silicon residual liquid can be removed; the filtrate obtained by means of filtering is rectified for the third time, and accordingly the silicon tetrachloride, the hexachlorodisiloxane and the third tower kettle rectification liquid mainly with the hexachlorodisilane can be obtained on tower tops.

A method is provided for depositing a silicon-containing film in a micro-feature on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed in a micro-feature by providing a substrate in a process chamber of a processing system, and exposing a hexachlorodisilane (HCD) process gas to the substrate. A processing tool containing a processing system for forming a silicon-containing film in a micro-feature using a silicon and chlorine-containing gas such as a HCD process gas is provided. Alternatively, the micro-feature can be exposed to DCS, SiCl₄, and SiHCl₃ gases. Alternatively, the micro-feature can be exposed to (SiH₄+HCl).

The invention discloses a treating method for residual liquid and slag slurry produced in polysilicon production, wherein the residual liquid and slag slurry contains silicon and silicon tetrachloride. The method comprises a step of adding a catalyst into the residual liquid and slag slurry so as to allow silicon to react with silicon tetrachloride so as to produce hexachlorodisilane. According to the treating method, through a synthesis reaction for hexachlorodisilane, the content of hexachlorodisilane in the residual liquid and slag slurry is increased, so residual liquid and slag slurry with high added value are obtained, and the economic performance of a hexachlorodisilane recovery process is improved; both solid waste and liquid waste produced in polysilicon production are reasonably converted and recycled, so treating cost for the residual liquid and slag slurry is lowered, and recovery of high-added-value products are realized; bottleneck problems in treating of the residual liquid and slag slurry during polysilicon production are overcome, and products of polysilicon production are diversified; and the discharge amounts of waste gas, waste water and industrial residues during polysilicon production are greatly reduced, and polysilicon production becomes environment-friendlier.

The present invention discloses a novel process for the preparation of 1-[2-(2,4-dimethylphenylsulphanyl)phenyl] piperazine. The process uses o-halogenated benzenesulfonic acid and m-xylene as raw materials, which are subjected to dehydration condensation with methylsulfonic acid and phosphorus pentoxide as condensing agents to generate halogenated diarylsulfone. Halogenated diarylsulfone and piperazine are subjected to a substitution reaction in an aprotic solvent to produce piperazine ring substituted diarylsulfone; the piperazine ring substituted diarylsulfone is reduced by hexachlorodisilane in an aprotic solvent to obtain a product with high yield. This method has the advantages of cheap and easily available raw materials, avoidance of the usage of a noble metal catalyst and treatment of residual palladium, simple operation, mild reaction conditions, simple post-treatment, and potential application values.

Hexachlorodisilane (Si₂Cl₆) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

The invention discloses a system for producing silane, monochlorosilane, dichlorosilane and hexachlorodisilane. The system comprises a raw material synthesis system, a silane synthesis system, a monochlorosilane synthesis system, a dichlorosilane synthesis system and a hexachlorodisilane synthesis system, wherein the raw material synthesis system comprises a hydrogenation system, a disproportionation tower I, a disproportionation tower II, a condenser I and a condenser II; the condenser I is fixed at the top end of the disproportionation tower I and is communicated with the disproportionation tower I; the condenser II is fixed at the top end of the disproportionation tower II and is communicated with the disproportionation tower II; an inlet of the hydrogenation system is communicated with the hexachlorodisilane synthesis system; the top outlet is communicated with the inlet of the disproportionation tower I; the top outlet of the disproportionation tower I is communicated with an inlet of the disproportionation tower II, and a bottom outlet of the disproportionation tower I is communicated with an inlet of the hexachlorodisilane synthesis system; a bottom outlet of the disproportionation tower II is communicated with an inlet of the disproportionation tower I, and a top outlet of the disproportionation tower II is communicated with an inlet of the silane synthesis system.

The invention relates to the field of preparation of high-purity hexachlorodisilane, in particular to a process for preparing high-purity hexachlorodisilane. According to the method, sorbitol is adopted to replace chelate resin to adsorb metal impurities, nitrogen is added in the purification process for accompanying as inert gas for protection and rectification, the introduced nitrogen mainly hasthe effects of reducing the distillation temperature and enhancing stirring of liquid in the tower kettle to prevent local overheating of the liquid in the kettle, therefore hexachlorodisilane is prevented from being heated to deteriorate. The process is high in rectification efficiency and low in process cost.