The invention belongs to the technical field of
quartz glass preparation, and discloses a
quartz glass CVD synthesis method based on secondary heating and a CVD deposition furnace, the synthesis method comprises the following steps: step 1,
hearth preheating; step 2, preheating the raw materials: evaporating the rectified
silicon tetrachloride liquid into a gaseous state, then controlling the flow rate through a
mass flow meter, conveying the gaseous
silicon tetrachloride liquid to a box type heater from a connecting pipeline, and carrying out secondary heating to 300-400 DEG C; step 3, deposition reaction: when the temperature in the deposition furnace reaches 1500-1700 DEG C, introducing the
silicon tetrachloride subjected to secondary heating into a
combustor, reacting with
oxyhydrogen flame which is burning on a deposition
target surface, starting deposition at the moment, rotating a lifting device to drive the deposition
target surface to descend, setting the initial flow of the
silicon tetrachloride to be 70-80g / min, and then increasing the initial flow to 120-130g / min; and step 4, ending deposition. The secondary
heating temperature of
silicon tetrachloride is set to 300-400 DEG C, so that the reacted product can reach a
molten state more quickly and form a glassy state more quickly, the forming period is shortened, and the synthesis efficiency is improved.