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Modified method and device for preparing trichlorosilane and multicrystal silicon

A technology of trichlorosilane and polysilicon, applied in chemical instruments and methods, silicon, silicon compounds, etc., can solve problems such as difficult transportation and disposal, and reduced process efficiency

Active Publication Date: 2008-03-19
JIANGSU ZHONGNENG POLYSILICON TECH DEV +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Silicon tetrachloride is easily hydrolyzed to produce hydrochloric acid, which is difficult to transport and dispose of
Therefore, the presence of silicon tetrachloride reduces the efficiency of the overall process

Method used

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  • Modified method and device for preparing trichlorosilane and multicrystal silicon

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Embodiment Construction

[0044] The process of the present invention for producing trichlorosilane by the hydrochlorination process will be described below with reference to FIG. 1 .

[0045] The device for preparing trichlorosilane includes a powder drying furnace 2 , an ebullated bed reactor 4 , a cyclone separator 6 , a heat recovery device 8 , a washing tower 10 and a condensation recovery device 12 .

[0046] The ebullating bed reactor 4 that is used for the present invention is generally made up of three parts, the gas separation part that is positioned at the top, the reaction part that is positioned at the middle part, and the feeding part that is positioned at the bottom, wherein the diameter of the gas separation part is greater than the diameter of the reaction part, There is a discharge port on the top, and there are hydrogen chloride gas inlet, silicon tetrachloride gas inlet, hydrogen gas gas inlet and silicon powder inlet on the feeding part, wherein the gas inlet is located under the re...

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Abstract

The invention relates to an improved method and equipment for the preparation of trichlorosilane and polysilicon. The trichlorosilane is prepared by a chlorine hydrogenation method during the preparation process of polysilicon. The process is as follows: a) the metallurgical silicon is put into a reactor after being heated to 300-500DGE C in a powder baker; b) the silicon tetrachloride is vaporized and heated through an external heating device, which generates the silicon tetrachloride gas at the temperature of 160-600DGE C; c) the hydrogen chloride gas is preheated to 150-300DGE C through the external heating device; d) the hydrogen gas is preheated to 300-600DGE C through a heater; and e) the gases of step b), c) and d) are added into the reactor; wherein, the molar ratio between the hydrogen gas and the silicon tetrachloride is 1-5:1, the molar ratio between the hydrogen chloride gas and the silicon tetrachloride is 1: 1-20; and the temperature in the reactor is maintained at 400-600DGE C and the pressure in the reactor is kept at 1.0-3.0MPa. The method of the invention can effectively prepare the polysilicon at a low cost, which suits for semiconductor industry and solar battery.

Description

technical field [0001] The present invention relates to an improved method and apparatus for the preparation of trichlorosilane and polysilicon. Specifically, the present invention relates to the preparation of trichlorosilane by the gas-solid catalytic reaction of silicon tetrachloride, hydrogen, hydrogen chloride and metallurgical silicon through the hydrochlorination method in the preparation of polysilicon. Background technique [0002] Polysilicon is the main raw material for manufacturing integrated circuit substrates, solar cells and other products. Polycrystalline silicon can be used to prepare monocrystalline silicon, and its deep-processed products are widely used in the semiconductor industry as the basic material for devices such as artificial intelligence, automatic control, information processing, and photoelectric conversion. At the same time, due to the energy crisis and the requirements of environmental protection, the world is actively developing and utili...

Claims

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Application Information

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IPC IPC(8): C01B33/107C01B33/03
CPCC01B33/03C01B33/039C01B33/10763C01B33/1071Y02P20/129
Inventor 陈维平
Owner JIANGSU ZHONGNENG POLYSILICON TECH DEV
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