200 results about "Strontium titanate" patented technology

The invention provides an anti-ferroelectric lanthanum ferrite, bismuth ferrite and strontium titanate superlattice film with high energy storage density as well as a preparation method and application thereof. The anti-ferroelectric lanthanum ferrite, bismuth ferrite and strontium titanate superlattice film with high energy storage density comprises a substrate layer, a bottom electrode layer and a plurality of stacked relaxation ferroelectric layers, wherein the bottom electrode layer and the multiple stacked relaxation ferroelectric layers are sequentially arranged on the substrate layer; each relaxor ferroelectric layer sequentially comprises a first functional layer, a second functional layer and a third functional layer from bottom to top; the first functional layer comprises LaFeO3, the second functional layer comprises BiFeO3, and the third functional layer comprises SrTiO3. The anti-ferroelectric lanthanum ferrite, bismuth ferrite and strontium titanate superlattice thin film with the high energy storage density has small electric leakage performance and high polarization value, and more excellent energy storage performance is achieved.

The invention provides a high-voltage low-loss dielectric material and a preparation method thereof, and relates to the technical field of high-voltage ceramic capacitors, and the high-voltage low-loss dielectric material comprises the following raw materials in parts by mass: 35-38 parts of barium titanate, 20-29.5 parts of strontium titanate, 15-17.5 parts of titanium dioxide, 9-12 parts of bismuth oxide, 3-4 parts of zirconium oxide, 0.8-1.0 part of X, 1.2-1.4 parts of antimony oxide, 1-1.2 parts of calcium carbonate and the like. The preparation method of the dielectric material comprises the following steps: 1, preparing the dielectric material; melting calcium carbonate, magnesium oxide, zinc oxide and the like, performing water quenching, and performing ball-milling granulation to obtain zinc borosilicate glass powder; uniformly mixing the zinc borosilicate glass powder with barium titanate, strontium titanate, titanium dioxide and the like, and granulating to obtain oxide powder; and tabletting and sintering the oxide powder to obtain the high-pressure low-loss dielectric material. The high-voltage low-loss dielectric material is high in dielectric constant, small in dielectric loss, high in compression strength and good in high-temperature stability, and the preparation method is simple.

To provide an electrophotographic apparatus and a process cartridge each suppressing the occurrence of image smearing in an output image under a high-temperature and high-humidity environment, provided are the following electrophotographic apparatus and process cartridge. That is, provided are an electrophotographic apparatus including: an electrophotographic photosensitive member; a charging unit; an image exposing unit; a developing unit; and a transferring unit, wherein the electrophotographic photosensitive member includes a surface layer containing indium tin oxide particles and a (meth)acrylic resin, and wherein the toner contains strontium titanate particles as an external additive, and a process cartridge.

The invention relates to a femtosecond laser processing method for a periodic ferrocobalt oxide single crystal stripe nanostructure, which comprises the following steps of: firstly, preparing a strontium titanate single crystal substrate, and depositing a single crystal epitaxial ferrocobalt oxide film (CFO) on the substrate through pulsed laser; and the included angle between the polarization direction of the femtosecond laser and the lattice orientation of the film is adjusted according to a preset crystallographic direction, so that the surface of the film is induced by the femtosecond laser to form a stripe-shaped periodic surface structure. The single crystal epitaxial cobalt ferrite film prepared by the method has a highly ordered nano structure, and the specific surface area and surface active sites of the material are remarkably improved, so that the application performance of the material in the fields of gas sensing and the like is enhanced.

The invention relates to the technical field of low-dielectric-loss materials, in particular to a high-performance soluble polytetrafluoroethylene material and a preparation method thereof. The high-performance soluble polytetrafluoroethylene material is prepared from the following raw materials in parts by mass: 85 to 100 parts of soluble polytetrafluoroethylene resin, 3 to 7 parts of nano silicon dioxide, 3 to 7 parts of boron nitride or activated boron nitride, 2 to 4 parts of aluminum oxide, 1 to 3 parts of strontium titanate and 0.1 to 1 part of coupling agent. Compared with a traditional low-dielectric-loss material, the low-dielectric-loss low-dielectric-loss material has the advantages that the low-dielectric-loss low-dielectric-loss low-dielectric-loss low-dielectric-loss low-dielectric-loss low-dielectric-loss low-dielectric-loss low-dielectric-loss low-dielectric-loss low-dielectric-loss low-dielectric-loss low-dielectric-loss low-dielectric-loss low-dielectric-loss low-dielectric-loss

A toner including: a toner particle; and an inorganic fine particle, wherein the inorganic fine particle contains a strontium titanate fine particle, a Si-containing protrusion portion is present at a surface of the strontium titanate fine particle, and the toner contains an amorphous polyester resin and an aluminum element at a surface of the toner particle.

The invention relates to the technical field of composite coating preparation materials for battery diaphragms, in particular to a composite coating for a battery diaphragm as well as a preparation method and application. The invention discloses a graphene quantum dot / carbon nanotube composite material, which is prepared from the following components in percentage by weight: 3 to 8 percent of aminated graphene oxide-polydopamine graft, 10 to 18 percent of polyimide-polyetheretherketone-nano SiO2 hybrid, 2 to 5 percent of hydroxyapatite-montmorillonite core-shell particles, 0.5 to 3 percent of zinc borate-melamine cyanurate compound, 1 to 3 percent of graphene quantum dot-carbon nanotube hybrid, 2 to 6 percent of sodium carboxymethyl cellulose and 50 to 70 percent of deionized water. 0.5 to 2 percent of barium strontium titanate nanocrystalline or 1 to 3 percent of polyethylene glycol-polypropylene glycol segmented copolymer can also be added. All the components are combined through molecular-level reaction to construct a high-performance protection network. The composite coating is good in high temperature resistance and mechanical strength, high in ionic conduction efficiency, excellent in flame retardant effect and good in interfacial compatibility, the preparation process is environmentally friendly and easy to industrialize, the composite coating is suitable for various batteries, and the comprehensive performance of the composite coating is superior to that of a traditional coating.

The invention relates to the technical field of synthesis and processing of ceramic materials, and discloses a multiphase composite coated high-dielectric-constant ceramic material and a preparation method of the multiphase composite coated high-dielectric-constant ceramic material. 11%-13% of strontium titanate; 5%-7% of holmium oxide; 5%-6% of lead magnesium niobate; 6%-7% of titanium dioxide; 2%-3% of yttrium oxide; 3%-4% of magnesium oxide; 3%-4% of bismuth oxide; 2%-3% of lithium carbonate; 4%-5.5% of silicon dioxide; 1%-2% of zinc oxide; 2.5%-3.5% of manganese dioxide; 6%-7% of copper oxide; 3%-4% of glass powder; 0.05% to 0.08% of lanthanide series elements; through the steps of component pretreatment, ball milling and mixing, drying and sieving, forming, sintering and post-treatment, the component activity is improved through high-temperature calcination pretreatment, and directional growth of crystal grains in the components can be promoted by precisely controlled sintering temperature; the prepared ceramic material has the advantages of high dielectric constant, low dielectric loss, excellent densification effect and good mechanical property.

The invention discloses a multi-morphology strontium titanate photocatalyst with near-infrared light response as well as a preparation method and hydrogen production application thereof, strontium titanate precursors with different morphologies are synthesized through a hydrothermal method, the strontium titanate precursors are subjected to heat treatment under a protective atmosphere, surface carbonization is realized, and the strontium titanate photocatalyst with near-infrared light response is obtained. The multi-morphology strontium titanate photocatalyst with near-infrared light response is obtained. By selecting different titanium sources and reaction conditions, strontium titanate with various morphologies such as mesoporous microspheres, cubic phases and dendrites can be directionally synthesized, and the requirements of different application scenes on catalyst structures are met. Defects and new energy levels are introduced on the surface of SrTiO3 through surface carbonization treatment, so that the light response range of the SrTiO3 is successfully expanded to a near-infrared region, near-infrared light can be efficiently utilized for water photolysis hydrogen production, and wide application prospects are achieved.

A toner including: a toner particle containing a binder resin; and an inorganic fine particle, wherein the inorganic fine particle contains a strontium titanate fine particle A, a silica fine particle B, and a hydrotalcite particle C, Si is present at a surface of the strontium titanate fine particle A, and a value Si / Sr of a mass ratio of Si to Sr, which is detected in a fluorescent X-ray analysis of the strontium titanate fine particle A, satisfies the following formula (1); 0.20≤Si / Sr≤0.60 . . . (1).

The invention provides a bismuth vanadate modified strontium titanate photocatalytic material and a preparation method thereof. The bismuth vanadate modified strontium titanate photocatalytic material is prepared by mixing the following components in percentage by weight: 0.1-10% of strontium titanate, 0.1-10% of a bismuth vanadate catalyst and 80-95% of a solvent. The preparation method comprises the following steps: 1, mixing strontium titanate with a solvent, and carrying out ultrasonic dispersion treatment on the mixture for 30 minutes to form a uniformly dispersed suspension A; step 2, adding bismuth vanadate into the turbid liquid A, and magnetically stirring for 60 minutes at normal temperature; 3, solid powder is separated, washed and dried; according to the invention, XRD and SET tests prove that BiVO4 and SrTi O3 are successfully subjected to Z-type heterogeneous compounding. Test results show that the formaldehyde removal rate of the material in a liquid phase under visible light reaches up to 88% and is not lower than 80% after four times of circulation, and the material has good stability.

The present application relates to the technical field of water treatment and environmental governance, and particularly relates to a nickel-strontium titanate electrode for removing uranium, a preparation method and application thereof, and the preparation method comprises the following steps: mixing a titanium source, an alcohol amine carrier and an alkaline solution to obtain a precursor solution; adding a nickel source and a strontium source into the precursor solution, performing ultrasonic treatment and hydrothermal reaction to obtain a nickel-strontium titanate material; and coating the nickel-strontium titanate material on the surface of a carbon fiber base material to obtain the nickel-strontium titanate electrode for removing uranium. Through the combination process of nickel doping, hydrothermal reaction and carbon cloth base coating, the prepared electrode forms a porous and uniformly dispersed composite structure, and meanwhile, the electrode can have optimal selectivity and removal efficiency for uranium in the range of pH 3-9. The nickel-strontium titanate electrode for removing uranium prepared by the present application is suitable for large-scale water treatment applications, and has a good application prospect in the fields of nuclear waste water and drinking water purification.

The invention belongs to the technical field of nanoimprint, and particularly discloses a metallic glass atomic-scale step preparation method based on a strontium titanate mold, which comprises the following steps: sequentially performing accurate grinding, annealing, etching, end sealing and the like on an imprint surface of single crystal strontium titanate to prepare a step mold; then preparing a Pt-based bulk metallic glass sample, carrying out thermodynamic characterization on the sample, and determining a'temperature-time 'window of thermoplastic forming; and finally, regulating and controlling nano-imprinting working condition parameters, and preparing atomic-scale steps of the metallic glass based on the strontium titanate mold so as to realize the patterning of an angstrom-scale fine structure on the surface of the metallic glass. The preparation method disclosed by the invention can be used for high-precision forming and long-service-life service of the metallic glass atomic step, and has the characteristics of simple process steps, high finished product precision, large scale and the like.

The application discloses a magnetoelectric heterojunction film and a preparation method thereof. The magnetoelectric heterojunction film comprises a strontium titanate base layer, a strontium ruthenate electrode layer, a bismuth ferrite ferroelectric material layer and a SmCo-based ferromagnetic material layer which are stacked in sequence. The magnetoelectric heterojunction film has the multi-ferroelectric layer room-temperature magnetoelectric coupling effect and the excellent magnetic performance of the ferromagnetic layer, and the magnetoelectric coupling effect of the heterojunction film can be enhanced through the strong exchange bias effect at the interface.

The invention discloses pure-phase bismuth ferrite-strontium titanate ceramic as well as a preparation method and application thereof, and belongs to the field of lead-free ferroelectric ceramic. Comprising the following steps: filling pure-phase BFO-STO precursor powder prepared by a hydrothermal method into a graphite mold, controlling the heating rate to a sintering temperature, and sintering under the conditions of external pressure and heat preservation, so as to finally prepare the BFO-STO ceramic. The BFO-STO ceramic is prepared through SPS sintering, volatilization of Bi < 3 + > and generation of impure phases are effectively inhibited, ferroelectric, dielectric and magnetic properties of the BFO ceramic are effectively improved, and possibility is provided for practical application of the BFO-STO ceramic in the fields of functional sensors, magnetic memories, piezoelectric generators, high-temperature inductors and the like.

The application relates to the field of environment-friendly ceramic technology, and particularly relates to a high-wear-resistance environment-friendly ceramic material and a preparation method thereof. The preparation method comprises the following steps: weighing raw materials according to weight parts: strontium titanate 10-15 parts, aluminum oxide 10-15 parts, mixed and adjusted silicon carbide fiber adjusting and connecting material 7-11 parts, and modified titanium oxide agent 5-8 parts. The environment-friendly ceramic material adopts the strontium titanate, the aluminum oxide, the mixed and adjusted silicon carbide fiber adjusting and connecting material and the modified titanium oxide agent, the raw materials are adjusted and matched, the raw materials are synergized, the environment-friendly ceramic material is prepared, the wear resistance, the heat conductivity and the dielectric loss of the environment-friendly ceramic material can be coordinately improved, and the alkali corrosion stability of the product is obviously improved.

The invention relates to the field of dielectric energy storage materials, and discloses a polyimide-based composite dielectric film material and a preparation method thereof.The dielectric film is prepared from, by mass, 4-20 parts of modified barium strontium titanate and 100 parts of fluorinated polyamide acid solution, the modified barium strontium titanate is prepared from the following raw materials: hydroxylated barium strontium titanate, 3-glycidyl ether oxypropyl trimethoxy silane, perfluoropolyether alcohol and a catalyst, and the fluorinated polyamide acid solution is prepared from the following raw materials: a fluorine-containing diamine monomer and a fluorine-containing dianhydride monomer; according to the technical scheme, the polyimide film dielectric film is prepared from fluorinated polyamide and modified silane barium strontium titanate, the dispersity of barium strontium titanate in a polyimide matrix is remarkably improved, the compatibility of barium strontium titanate and fluorinated polyimide is remarkably improved, and the dielectric energy storage performance of the dielectric film is remarkably improved; the hydroxylated barium strontium titanate is modified through the 3-glycidyl ether oxypropyl trimethoxy silane and the perfluoropolyether alcohol, so that the dielectric loss of the dielectric film is remarkably reduced.

The invention relates to the technical field of environment-friendly ceramics, in particular to a high-wear-resistance environment-friendly ceramic material and a preparation method thereof. The preparation method comprises the following steps: weighing the following raw materials in parts by weight: 10-15 parts of strontium titanate, 10-15 parts of aluminum oxide, 7-11 parts of a silicon carbide fiber-doped blending material and 5-8 parts of a modified titanium oxide agent; according to the environment-friendly ceramic material disclosed by the invention, strontium titanate is matched with aluminum oxide, the blending material blended with silicon carbide fiber and the modified titanium oxide agent as raw materials, and the raw materials are blended, coordinated and synergistic, so that the wear resistance, the thermal conductivity and the dielectric loss of the prepared environment-friendly ceramic material can be improved in a coordinated manner, and the alkali corrosion resistance stability effect of the product is remarkable.

The application provides a yttrium barium copper oxide photonic crystal and a preparation method thereof. 7‑x The photonic crystal structure is composed of periodic yttrium barium copper oxide (YBa2Cu3O 7‑x ) superconducting material circular crystal columns, the lattice constant is 2630nm, and the radius of the circular crystal column is 500nm. The photonic crystal can change the position and width of the band gap by changing the light incidence angle, so that the middle infrared band gap is realized. The photonic crystal is prepared by adopting a magnetron sputtering method to prepare a yttrium barium copper oxide film on a strontium titanate single crystal substrate, and then adopting a focused ion beam method to process the yttrium barium copper oxide film into a periodic nanostructure composed of yttrium barium copper oxide circular crystal columns, so that the yttrium barium copper oxide photonic crystal is obtained. The preparation method of the yttrium barium copper oxide photonic crystal is simple and easy to control.

The invention belongs to the field of film sensors, and discloses a preparation method of a lanthanum aluminate / strontium titanate nanostructure for hydrogen detection, which comprises the following steps: preparing a strontium titanate single crystal substrate, depositing a single crystal epitaxial lanthanum aluminate film on the strontium titanate single crystal substrate by pulse laser to obtain a single crystal epitaxial lanthanum aluminate / strontium titanate material; then, a stripe-shaped periodic surface nanostructure is formed on the surface of the single crystal epitaxial lanthanum aluminate thin film through femtosecond laser induction, a lanthanum aluminate / strontium titanate nanostructure is obtained, and then precious metal nanoparticles are deposited on the surface of the lanthanum aluminate / strontium titanate nanostructure. According to the preparation method, the highly-ordered single-crystal lanthanum aluminate / strontium titanate heterogeneous film is obtained by accurately controlling pulse laser deposition process parameters, and a nano stripe periodic structure is prepared on the surface of lanthanum aluminate by accurately controlling pulse femtosecond laser processing parameters, so that the specific surface area is effectively increased, gas adsorption sites are increased, and the specific surface area of the lanthanum aluminate / strontium titanate heterogeneous film is increased. And the gas charge transmission capability of the lanthanum aluminate / strontium titanate interface two-dimensional electron gas is improved.

The present application relates to a kind of preparation of complete mosaic-like barium strontium titanate solid solution ceramic sheet, which comprises the following steps: (1) two initial powders are mixed uniformly. After the stoichiometric ratio of nano barium titanate powder and nano strontium titanate powder is mechanically mixed by planetary ball mill for 24h, it is dried and ground to obtain the powder to be sintered;(2) the powder to be sintered is placed in graphite mold twice, the two powders are separated by two carbon paper, and pre-pressed in hand rotating tablet press and discharge plasma sintering furnace;(3) discharge plasma sintering is carried out, and appropriate sintering parameters are set, and sintering program is started, and after sintering, it is first rapidly cooled to a safe temperature 900 DEG C where grain growth is not easy, and then slowly cooled to 600 DEG C at 5 DEG C / min;(4) the sintered sample is placed in muffle furnace, and annealed at 800 DEG C for 10h, to obtain two relatively complete mosaic-like barium strontium titanate solid solution sheets.

A method for processing a substrate includes positioning a silicon substrate in a deposition chamber. One or more intermediate layers are deposited on a surface of the silicon. The one or more intermediate layers can include strontium, which combines with the silicon to form strontium silicide. Alternatively, the one or more intermediate layers comprise germanium. A layer of amorphous strontium titanate is deposited on the one or more intermediate layers in a transient environment in which oxygen pressure is reduced while temperature is increased. The substrate is then exposed to an oxidizing and annealing atmosphere that oxidizes the one or more intermediate layers and converts the layer of amorphous strontium titanate to crystalline strontium titanate.

The invention provides a hydrogen interstitial doped strontium titanate material and a preparation method thereof, the hydrogen interstitial doped strontium titanate material is prepared by doping a hydrogen element into a strontium titanate single crystal through a solid-phase reaction, and the hydrogen element is introduced into a strontium titanate lattice interstitial site by using sodium borohydride as a hydrogen source. According to the hydrogen gap doped strontium titanate material disclosed by the invention, the carrier concentration is obviously increased, the absorption of the material in a range from visible light to infrared light is enhanced by doping, and the photon utilization rate is improved. Compared with heavy metal displacement doping and hydrogen ion gap doping, the carrier mobility is not damaged, environmental protection is easy, the cost is low, doping conditions are not harsh, and large-scale industrial production is easy.

The invention relates to the technical field of powdered ink, in particular to duplicator powdered ink and a preparation method thereof.The duplicator powdered ink comprises colored resin particles with the use amount accounting for 95-99.8% of the total weight of the powdered ink; wherein the colored resin particles comprise the following components in parts by weight: 75-90 parts of resin, 2-10 parts of a coloring agent, 0.5-8 parts of a charge control agent and 1.5-8 parts of a release agent; the dosage of the external additive is 0.2-5% of the total weight of the powdered ink; wherein the external additive comprises silicon dioxide particles A, silicon dioxide particles B and strontium titanate / silicon dioxide composite particles; the strontium titanate / silicon dioxide composite particle comprises a strontium titanate particle and a silicon dioxide shell layer coating the surface of the strontium titanate particle, and the silicon dioxide shell layer is treated by an organosilane modifier. The powdered ink has good electrification performance, the electrification performance is durable and stable, the transfer printing efficiency is high, the image quality deterioration phenomena such as bottom ash and hollow handwriting cannot be generated during continuous printing, and the powdered ink has excellent performance in the aspect of durable copying performance.

The invention relates to the technical field of thin-film capacitors, solves the problem that the film-forming property of a polyvinylidene fluoride thin film for improving the energy storage density of the thin film by adding an inorganic filler into a PVDF (Polyvinylidene Fluoride) base material is reduced, and particularly discloses a biaxially oriented polyvinylidene fluoride composite film for a capacitor and a preparation method of the biaxially oriented polyvinylidene fluoride composite film. The raw materials comprise 70-90 parts of polyvinylidene fluoride and 10-30 parts of a modified dielectric enhanced nanofiller; the modified dielectric enhanced nano filler is a modified filler obtained by using a dielectric enhanced filler as a raw material and performing surface grafting fluorosilane modification treatment, and the dielectric enhanced filler comprises one or more of nano barium titanate, nano strontium titanate and nano barium strontium titanate. Polyvinylidene fluoride is used as a membrane material matrix, and chemical modification and graft modification of fluorosilane are performed on the surface of a filler, so that the compatibility of the filler with polyvinylidene fluoride containing a large number of fluorine groups is increased, particle agglomeration is reduced, and meanwhile, the energy storage density, the membrane forming property and the like of the polyvinylidene fluoride composite membrane are improved.

The present invention provides a strontium titanate-based oxide superlattice thin film memristor and a preparation method thereof. The preparation method comprises the following steps: using a niobium-doped strontium titanate single crystal substrate as a bottom electrode; alternately depositing strontium titanate layers and another type of oxide film layer on the surface of the niobium-doped strontium titanate single crystal substrate to prepare a strontium titanate-based oxide superlattice thin film as a storage dielectric layer, wherein the other type of oxide film layer is selected from one of yttrium-doped zirconium oxide, lanthanum cobalt oxide, or bismuth ferrite; and further depositing a metal film as a top electrode on the surface of the substrate coated with the storage dielectric layer obtained in step S2, to obtain a memristor comprising bottom electrode||STO-based oxide superlattice thin film storage dielectric layer||top electrode. The strontium titanate-based oxide superlattice thin film memristor prepared by this preparation method can form a single crystal or a superlattice thin film with high crystal integrity, and the memristor has a low operating voltage and high configuration stability.

The invention discloses a high-voltage strontium titanate ceramic material and application thereof, and belongs to the technical field of lead-free dielectric ceramic materials. The chemical general formula of the high-voltage strontium titanate ceramic material is (SrmAnBnCqDs) (TixEyFy) O3, wherein m + 2n + q + s = 1, m, n, q, sgt; 0, x + 2y = 1, xgt; 0, 0 < y < = 0.2; the element A and the element B form an A-B heterovalent element pair, the sum of element valence states of the A-B heterovalent element pair is 4, and at least one A-B heterovalent element pair is arranged; the element C and the element D are not element pairs, the valence states of the elements are positive bivalent, and the element A, the element B, the element C and the element D are different in composition elements; the element E and the element F form an EF hetero-valent element pair, the sum of element valence states of the EF hetero-valent element pair is 8, and at least one EF hetero-valent element pair is arranged. The breakdown voltage and capacitance of the high-voltage ceramic capacitor can be improved while the miniaturization of the high-voltage ceramic capacitor is maintained.

The invention provides a spherical polyhedral strontium titanate single crystal particle as well as a preparation method and application thereof. The preparation method of the spherical polyhedral strontium titanate single crystal particles comprises the following steps: mixing a titanium source, a strontium source, a morphology regulating agent, an aluminum source and alkali liquor, and carrying out ultrasonic dispersion to obtain a mixed solution; carrying out hydrothermal reaction on the mixed solution, and then washing and drying to obtain the spherical polyhedral strontium titanate single crystal particles. The regular spherical polyhedral strontium titanate single-crystal particles are prepared by adopting a hydrothermal method and utilizing a titanium source, a strontium source and an aluminum source, effective exposure of a plurality of micro crystal faces with different orientations such as (100), (110) and (111) is realized, and the regular spherical polyhedral strontium titanate single-crystal particles are applied to the field of photocatalysis and can show an efficient water photolysis hydrogen production rate under a sun illumination condition.

The invention discloses B-site doped high-entropy strontium titanate ceramic powder and a preparation method thereof, and belongs to the technical field of high-entropy ceramic materials. The chemical formula of the B-site doped high-entropy strontium titanate ceramic provided by the invention is Sr (Zr < 0.25 > Ti < 0.25 > In < 0.25 > Ta < 0.25 >) O3. The preparation method of the ceramic powder comprises the following steps: weighing strontium carbonate and other metal oxides according to the stoichiometric ratio of the chemical formula, mixing and ball-milling to obtain mixed powder, adding Arabic gum, uniformly stirring, granulating, sintering and sieving to obtain the B-site doped high-entropy strontium titanate powder. Four elements of Zr, Ti, In and Ta are doped in B-bit crystal lattices of strontium titanate (SrTiO3) to form the high-entropy ceramic, so that the confusion degree of the high-entropy ceramic is increased, the dielectric constant of the high-entropy ceramic is expected to be improved, and the dielectric loss of the high-entropy ceramic is expected to be reduced.

The application belongs to the field of electronic components, and particularly relates to a MCM-1A type high-frequency metal packaging mica capacitor. The capacitor is composed of a metal packaging shell, a core group in the shell is fixed by a silver-plated metal gasket, and the core group is composed of multiple pieces of white mica sheets printed with electrodes and silver-plated metal lead-out sheets alternately stacked. A dielectric topological insulator heterojunction composite nanomaterial is introduced into the silver-plated metal gasket. The material takes a bismuth diselenide nanosheet as a core, coats a barium strontium titanate shell through an atomic layer deposition process, and is modified through surface polymer coating. The composite nanomaterial effectively optimizes the interface characteristics and high-frequency conductivity of the electrode. The capacitor has a simple preparation process, is compatible with the existing production line, has lower loss and higher temperature stability at high frequency, and is suitable for high-frequency circuits.