850 results about "Strontium titanate" patented technology

The invention comprises a chemical vapor deposition method of forming a barium strontium titanate comprising dielectric layer. A substrate is positioned within a reactor. Barium and strontium are provided within the reactor by flowing at least one metal organic precursor to the reactor. Titanium is provided within the reactor. At least one oxidizer is flowed to the reactor under conditions effective to deposit a barium strontium titanate comprising dielectric layer on the substrate. In one implementation, the oxidizer comprises H2O. In one implementation, the oxidizer comprises H2O2. In one implementation, the oxidizer comprises at least H2O and at least another oxidizer selected from the group consisting of O2, O3, NOx, N2O, and H2O2, where “x” is at least 1. In one implementation, the oxidizer comprises at least H2O2 and at least another oxidizer selected from the group consisting of O2, O3, NOx, and N2O, where “x” is at least 1.

A method of forming (and apparatus for forming) a layer, such as a strontium titanate, barium titanate, or barium-strontium titanate layer, on a substrate by employing a vapor deposition method, particularly a multi-cycle atomic layer deposition process.

A nitrogen oxide storage material is disclosed which contains at least one storage component for nitrogen oxides in the form of an oxide, mixed oxide, carbonate or hydroxide of the alkaline earth metals magnesium, calcium, strontium and barium and the alkali metals potassium and caesium on a high surface area support material. The support material can be doped cerium oxide, cerium / zirconium mixed oxide, calcium titanate, strontium titanate, barium titanate, barium stannate, barium zirconate, magnesium oxide, lanthanum oxide, praseodymium oxide, samarium oxide, neodymium oxide, yttrium oxide, zirconium silicate, yttrium barium cuprate, lead titanate, tin titanate, bismuth titanate, lanthanum cobaltate, lanthanum manganate and barium cuprate or mixtures thereof.

A sealant composition for use in sealing solid oxide fuel cells is provided which comprises a glass component which comprises a mixture of alkali-free inorganic oxides, and an optional filler component dispersed in the glass component, said filler component being up to 40% by weight of the composition. The glass component can include, on a mole basis, 20 to 50% BaO, 1 to 10% Y2P3, 5 to 20% B2O3, 10 to 30% SiO2, 3 to 35% MgO, 2 to 20% CaO, 1 to 10% ZnO, and 0 to 5% ZrO2, and exemplary filler components include zirconia, alumina, barium titanate, strontium titanate, and combinations thereof.

A duplexer for bidirectional communication systems includes tunable band reject filters. The tunable band reject filter on the receiver side can be tuned to reject the transmit signal frequency, and the tunable band reject filter on the transmitter side can be tuned to reject the receive signal frequency. Thus, the band reject filters allow for simultaneous tuning of the band reject frequencies on the transmission side and the reception side. The tunable band reject filters can be implemented as resonators including barium strontium titanate (BST) capacitors of which the capacitance can be tuned according to bias voltages applied to the BST capacitors.

A low-temperature hydrothermal reaction is provided to generate crystalline perovskite nanotubes such as barium titanate (BaTiO3) and strontium titanate (SrTiO3) that have an outer diameter from about 1 nm to about 500 nm and a length from about 10 nm to about 10 micron. The low-temperature hydrothermal reaction includes the use of a metal oxide nanotube structural template, i.e., precursor. These titanate nanotubes have been characterized by means of X-ray diffraction and transmission electron microscopy, coupled with energy dispersive X-ray analysis and selected area electron diffraction (SAED).

High-capacity capacitors and gate insulators exhibiting moderately high dielectric constants with surprisingly low leakage using amorphous or low temperature films of perovskite type oxides including a titanate system material such as barium titanate, strontium titanate, barium strontium titanate (BST), lead titanate, lead zirconate titanate, lead lanthanum zirconate titanate, barium lanthanum titanate, a niobate, aluminate or tantalate system material such as lead magnesium niobate, lithium niobate lithium tantalate, potassium niobate and potassium tantalum niobate, a tungsten-bronze system material such as barium strontium niobate, lead barium niobate, barium titanium niobate, and Bi-layered perovskite system material such as strontium bismuth tantalate, bismuth titanate deposited directly on a silicon surface at temperatures about 450° C. or less.

In an embodiment of the present invention, a method is provided of patterning PZT layers or BST layers. For example, a PZT layer or a BST layer is plasma etched through a high-temperature-compatible mask such as a titanium nitride (TiN) mask, using a plasma feed gas comprising as a primary etchant boron trichloride (BCl3) or silicon tetrachloride (SiCi4). Although BCl3 or SiCl4 may be used alone as the etchant plasma source gas, it is typically used in combination with an essentially inert gas. Preferably the essentially inert gas is argon. Other potential essentially inert gases which may be used include xenon, krypton, and helium. In some instances O2 or N2, or Cl2, or a combination thereof may be added to the primary etchant to increase the etch rate of PZT or BST relative to adjacent materials, such as the high-temperature-compatible masking material. A TiN masking material can easily be removed without damaging underlying oxides. The selectivity of PZT or BST relative to TiN is very good, with the ratio of the etch rate of the PZT film to the etch rate of the TiN mask typically being better than 20:1. In addition, the etch rate for PZT using a BCl3-comprising plasma source gas is typically in excess of 2,000 Å per minute. A substrate bias power is applied to direct ions produced from the BCl3 or SiCl4 toward the surface to be etched. The bias power is controlled to avoid sputtering of a conductive layer or layers in contact with the PZT layer, so that the surface of the etched PZT is not contaminated by a conductive material, which can cause the semiconductor device which includes the patterned PZT to short out.

Tunable dielectric materials including an electronically tunable dielectric ceramic and a low loss glass additive are disclosed. The tunable dielectric may comprise a ferroelectric perskovite material such as barium strontium titanate. The glass additive may comprise boron, barium, calcium, lithium, manganese, silicon, zinc and / or aluminum-containing glasses having dielectric losses of less than 0.003 at 2 GHz. The materials may further include other additives such as non-tunable metal oxides and silicates. The low loss glass additive enables the materials to be sintered at relatively low temperatures while providing improved properties such as low microwave losses and high breakdown strengths.

A ceramic anode structure obtainable by a process comprising the steps of: (a) providing a slurry by dispersing a powder of an electronically conductive phase and by adding a binder to the dispersion, in which said powder is selected from the group consisting of niobium-doped strontium titanate, vanadium-doped strontium titanate, tantalum-doped strontium titanate, and mixtures thereof, (b) sintering the slurry of step (a), (c) providing a precursor solution of ceria, said solution containing a solvent and a surfactant, (d) impregnating the resulting sintered structure of step (b) with the precursor solution of step (c), (e) subjecting the resulting structure of step (d) to calcination, and (f) conducting steps (d)-(e) at least once.

The magnetic toner contains: magnetic toner particles containing a binder resin and a magnetic body; and inorganic fine particles present on the surface of the magnetic toner particles, wherein the inorganic fine particles present on the surface of the magnetic toner particles comprise strontium titanate fine particles and metal oxide fine particles, and the metal oxide fine particles containing silica fine particles, and optionally containing titania fine particles and alumina fine particles, and a content of the silica fine particles being at least 85 mass % with respect to a total mass of the silica fine particles, the titania fine particles and the alumina fine particles. In addition, the magnetic toner has a characteristic state of coverage, by the inorganic fine particles, of the magnetic toner particle surface, and the ratio [D4 / D1] of the weight-average particle diameter (D4) to the number-average particle diameter (D1) is in a prescribed range.

The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The present invention provides a clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a copper layer bonded to at least one face of the above described metallic layer, wherein the above described copper layer has a {100}<001> cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦6 degree. The clad textured metal substrate for forming the epitaxial thin film thereon has an intermediate layer on the surface of the copper layer so as to form the epitaxial thin film thereon, wherein the above described intermediate layer preferably includes at least one layer of a material selected from the group consisting of nickel, nickel oxide, zirconium oxide, rare-earth oxide, magnesium oxide, strontium titanate (STO), strontium barium titanate (SBTO), titanium nitride, silver, palladium, gold, iridium, ruthenium, rhodium and platinum.

A glass-ceramic composition contains first ceramic particles principally containing forsterite; second ceramic particles principally containing at least one selected from the group consisting of calcium titanate, strontium titanate, and titanium oxide; and borosilicate glass particles containing about 3% to 15% lithium oxide, about 20% to 50% magnesium oxide, about 15% to 30% boron oxide, about 10% to 45% silicon oxide, about 6% to 20% zinc oxide, 0% to about 15% aluminum oxide, and at least one additive selected from the group consisting of calcium oxide, barium oxide, and strontium oxide on a weight basis. The content of the borosilicate glass particles is about 3% or more; the lower limit of the content of the additive is about 2%; and the upper limit of the additive content is about 15%, about 25%, or about 25% when the additive is calcium oxide, barium oxide, or strontium oxide, respectively, on a weight basis.

A functional perovskite cell formed on a silicon substrate layer and including a functional layer of bismuth ferrite (BiFeO3 or BFO) sandwiched between two electrode layers. An intermediate template layer, for example, of strontium titanate allows the bismuth ferrite layer to be crystallographically aligned with the silicon substrate layer. Other barrier layers of platinum or an intermetallic alloy produce a polycrystalline BFO layer. The cell may be configured as a non-volatile memory cell or a MEMS structure respectively depending upon the ferroelectric and piezoelectric character of BFO. The films may be grown by MOCVD using a heated vaporizer.

The invention belongs to the technical field of the information memory and particularly relates to a ferroelectric oxide / semiconductor sequentially composite film diode resistance change memory. The resistance change memory comprises a substrate, a bottom electrode, a ferroelectric oxide / semiconductor composite memory function layer and a top electrode, and is prepared by the following method which comprises the following steps: developing compound electrodes, such as strontium ruthenium, lanthanum nickel and the like, or metal on the monocrystal strontium titanate or SiO2 / Si substrate to serve as the bottom electrode; then developing the ferroelectric oxide / semiconductor composite film function layer by a pulsed laser deposition or radio frequency magnetron sputtering method; and developing the metal top electrode to form a single diode memory unit structure. The polarity of the diode changes with the orientation of the electric domain. The ferroelectric oxide / semiconductor composite film diode resistance change memory has the advantages of high memory density, good information retentivity and low power consumption.

A solid oxide ceramic includes a substrate defining a surface, the substrate including at least one material selected from the group consisting of yttria-stabilized zirconia (YSZ), lanthanum strontium titanate (LST), lanthanum strontium manganite (LSM), and nickel oxide-YSZ composite. The solid oxide ceramic further includes a seal coating at least a portion of the surface, the seal including a Sanbornite (BaO.2SiO2) crystal phase, a Hexacelsian (BaO.Al2O3.2SiO2) crystal phase, and a residual glass phase, wherein the seal has a coefficient of thermal expansion equal to or less than that of the substrate at said surface. The glass composition can have a difference between a glass crystallization temperature and a glass transition temperature in a range of between about 200° C. and about 400° C. at a heating rate of about 20° C. / min.

A La-doped strontium titanate (SrTiO3)-based oxide thermoelectric material and a preparation method thereof, belonging to the technical field of energy materials. The method is divided into two parts of powder synthesis and forming of bulk materials. The powder synthesis adopts the sol-gel method, takes tetrabutyl titanate, strontium nitrate and lanthanum nitrate as raw materials, takes deionized water and ethanol as solvents and takes acetic acid and glycerol as a catalyst and a chelating agent to prepare SrTiO3 gel with different La doping amount, and the temperature is kept at the temperature of 500-560 DEG C for 1-2 hours to obtain precursor powder. The bulk forming adopts the spark plasma sintering method, and the sintering conditions are as follows: the vacuum degree is 2-10Pa, the pressure is 40-50MPa, the heating rate is 100 DEG C / min, the sintering temperature is 900-1000 DEG C, and the holding time is 5-10min. The method synthesizes the La-doped SrTiO3-based bulk thermoelectric material with high chemical homogeneity, uniform and fine grains and single-phase perovskite structure under the conditions of lower reaction temperature and shorter reaction time. The preparation method has the advantages of simple and convenient process, short synthesis and forming time, and the like.

The invention discloses a high-energy-storage sodium bismuth titanate-strontium titanate matrix material. The chemical formula of the high-energy-storage sodium bismuth titanate-strontium titanate matrix material is 0.5Bi0.5Na0.5TiO3-0.5SrTiO3-x wt%MgO, wherein x=0.5-3.0. A preparation method of the high-energy-storage sodium bismuth titanate-strontium titanate matrix material comprises the following steps of preparing SrCO3, TiO2, Bi2O3, Na2CO3 and MgO by weight ratio according to the chemical formula into a ceramic powder, performing ball milling, drying and pelletizing, and then pressing the ceramic powder in a tablet press into a ceramic blank; rubber-discharging and sintering the ceramic blank inside a muffle furnace to obtain a ceramic sample. The preparation method of the high-energy-storage sodium bismuth titanate-strontium titanate matrix material is simple in preparation process, low in cost and free from pollution; the prepared high-energy-storage sodium bismuth titanate-strontium titanate matrix material achieves a high discharging energy storage density of 1.61-2.17 J / cm3 and a high breakdown strength of 137-226 KV / cm.

An anode and method of making the same wherein the anode consists of two separate phases, one consisting of a doped strontium titanate phase and one consisting of a doped cerium oxide phase. The strontium titanate phase consists of Sr1-xMxTiO3-δ, where M is either yttrium (Y), scandium (Sc), or lanthanum (La), where “x” may vary typically from about 0.01 to about 0.5, and where δ is indicative of some degree of oxygen non-stoichiometry. A small quantity of cerium may also substitute for titanium in the strontium titanate lattice. The cerium oxide consists of NyCe1-yO2-δ, where N is either niobium (Nb), vanadium (V), antimony (Sb) or tantalum (Ta) and where “y” may vary typically from about 0.001 to about 0.1 and wherein the ratio of Ti in said first phase to the sum of Ce and N in the second phase is between about 0.2 to about 0.75. Small quantities of strontium, yttrium, and / or lanthanum may additionally substitute into the cerium oxide lattice. The combination of these two phases results in better performance than either phase used separately as an anode for solid oxide fuel cell or other electrochemical device.

The present invention relates to a dielectric ceramic composition comprising a main component including at least one selected from barium titanate, strontium titanate and calcium titanate, and as a subcomponent, a glass component including an oxide of B, wherein a content of said glass component is 2 to 7 wt % with respect to 100 wt % of said main component. According to the present invention, there are provided a dielectric ceramic composition wherein a layer can be made thinner by relatively decreasing a content of the glass component, etc., as well as having good properties (specific permittivity, loss Q value and insulation resistance), and a complex electronic device such as a multilayer filter or a multilayer ceramic capacitor, which has a dielectric layer composed of the dielectric ceramic composition.

Provided are a toner and a two-component developer each of which: shows a small fluctuation in charge quantity and a small fluctuation in image density even under a high-temperature and high-humidity environment; and does not cause any member contamination even after endurance and hence can stably output an image. The toner and the two-component developer each have a feature in that positively chargeable strontium titanate fine particles are added to toner particles having fixed thereto negatively chargeable silica fine particles.

A method of forming a dielectric structure, such as a layer, is disclosed. The method comprises forming a high-k structure from a plurality of portions of a high-k material. Each of the plurality of portions of the high-k material is formed by depositing a plurality of monolayers of the high-k material and annealing the high-k material. The high-k material may be a perovskite-type material including, but not limited to, strontium titanate. A dielectric structure, a capacitor incorporating a dielectric structure and a method of forming a capacitor are also disclosed.

A method of depositing a zirconia-based ceramic coating (24) using a low velocity oxy-fuel (LVOF) process. Particles of zirconia (14) are mixed with second constituent particles (16) of a material having a melting temperature sufficiently low to be successfully deposited by an LVOF process. The second constituent particles may have a coefficient of thermal expansion within 30% of that of the zirconia particles, and / or they may have a thermal conductivity less than or no more than 20% higher that that of the zirconia particles. The second constituent particles may include calcium titanate, strontium titanate or sodium-zirconium-phosphate-silicate (NZPS). The capability to deposit the zirconia-containing particle mix with an LVOF process facilitates the in-situ repair of a component having a damaged zirconia-based thermal barrier coating.

Provided is toner that contains a toner particle, and an external additive containing a strontium titanate particle, wherein the toner has an average circularity of at least 0.935 and not more than 0.995, the strontium titanate particle has a number-average primary particle diameter of at least 10 nm and not more than 60 nm, the strontium titanate particle has a peak in the range of 39.700°±0.150° and a peak in the range of 46.200°±0.150° in a CuKα x-ray diffraction spectrum obtained in the 2θ range of at least 10° and not more than 90° where θ is the Bragg angle, and the ratio of the area Sb of the peak at 46.200°±0.150° to the area Sa of the peak at 39.700°±0.150° is at least 1.80 and not more than 2.30.

The invention discloses a preparation method of a rare earth nickel-based oxide polycrystalline film material, and belongs to the field of inorganic nonmetal film materials. The preparation method comprises the steps that an oxide material buffer layer with lattice parameters similar with that of a rare earth nickel-based perovskite oxide material grows on the surface of a substrate material; and a rare earth nickel-based perovskite oxide film is further deposited on the surface of the buffer layer through a vacuum deposition method. The crystal structure of the rare earth nickel-based perovskite oxide material is the perovskite structure ReNiO3 of ABO3, and the Re position is one rare earth element or the combination of various rare earth elements. The materials of the buffer layer preferentially comprise strontium rubidium oxygen, strontium titanate, lanthanum doped strontium titanate, neodymium doped strontium titanate, barium titanate and calcium titanate. The preparation method of the rare earth nickel-based oxide polycrystalline film material is easy, convenient and efficient. The prepared film material has excellent temperature dependent and hydrogen-induced performance and can be further applied in the fields of functional electronic devices, fuel cells, infrared detectors and the like.

The invention discloses a method for preparing strontium titanate nanometer powder with one-dimension structure, which consists of procedures of preparing the oxyhydroxide precipitate of titanium and the deionized aqueous solution of barium acetate as reaction materials, adding a feasible quantity of potassium hydroxide to promote crystallization, and appending a suitable viscosity of patterned vertical alignment polymer surfactant to control the feature; under the temperature of 100-150 DEG C, strontium titanate nanowire and a branched crystal structure are obtained after a hydrothermal reaction. The craftwork of the invention is simple; the micro feature of the product is easy to control, the pollution is free; the cost is low; a large-scale production is suitable. The quality of the crystallization of the prepared product is stable; the specific surface is big. A broad application prospect is possessed in fields of micro electronic devices, EO devices, storage devices, oxygen sensors, photocatalyst, and solar battery, etc.

This invention discloses a method for preparing porous strontium titanate spheres. The method comprises: preparing titanium oxyhydroxide precipitate and deionized water solution of strontium as the reactants, adding KOH with an appropriate concentration to promote crystallization, adding poly(vinyl alcohol) surfactant with an appropriate concentration to control the morphology, and performing hydrothermal reaction at 150-200 deg.C to obtain monodispersed porous strontium titanate spheres. The method has such advantages as simple process, easy control of pore size and specific surface area, no pollution and low cost, and is suitable for mass production. The obtained porous strontium titanate spheres have such advantages as stable crystal quality, high powder dispersibility and large specific surface area, and can be used in microelectronics, catalysts, solar cells, sensors and luminescent materials.