666results about How to "Achieve growth" patented technology

This invention provides an aligned single-layer carbon nanotube bulk structure, which comprises an assembly of a plurality of aligned single-layer carbon nanotube and has a height of not less than 10 μm, and an aligned single-layer carbon nanotube bulk structure which comprises an assembly of a plurality of aligned single-layer carbon nanotubes and has been patterned in a predetermined form. This structure is produced by chemical vapor deposition (CVD) of carbon nanotubes in the presence of a metal catalyst in a reaction atmosphere with an oxidizing agent, preferably water, added thereto. An aligned single-layer carbon nanotube bulk structure, which has realized high purify and significantly large scaled length or height, its production process and apparatus, and its applied products are provided.

The invention discloses a two-dimensional transition metal disulfides (TMDs) monocrystalline, and a preparation method and applications thereof. According to the preparation method, in an inert atmosphere, assist control of the concentration of S or Se in a system is realized with common metal which is capable of reacting with sulfur family elementary substance (S, Se) and hydrogen so as to control sulfuration degree or selenylation degree of a transition metal layer, and controllable growth of TMDs monocrystalline is realized via chemical vapor deposition; deposition temperature is controlled to be 750 to 850 DEG C, and deposition time is controlled to be 5 to 15min so as to complete TMDs monocrystalline preparation; wherein, strict control on high-quality two-dimensional transition metal disulfides monocrystalline is realized via optimization of preparation parameters such as substrate sputtering treatment method, sulfur family elementary substance powder using amount, absorbed S/Se metal area and kinds, hydrogen concentration, growth temperature, and growth time.

The invention provides a dendritic gold-core/platinum-shell bimetal nanometer rod and a preparation method thereof. The dendritic gold-core/platinum-shell bimetal nanometer rod comprises a cylindrical gold nanometer-rod core and a porous platinum-shell layer covering the outer surface of the cylindrical gold nanometer-rod core; the diameter of the cylindrical gold nanometer-rod core is 10 to 15 nanometers; the length of the cylindrical gold nanometer-rod core is 55 to 60 nanometers; the thickness of the porous platinum-shell layer is 0.4 to 8 nanometers; and the length of platinum grains covering the outside of a nanometer rod is 2 to 4 nanometers. The preparation method provided by the invention has the advantages of simplicity, flexibility, environmental protection, green chemistry and low energy consumption. In addition, the obtained bimetal nanometer rod with a gold-core/platinum-shell structure has the characteristics of high yield, narrow size distribution, stable structure and adjustable optical properties.

The invention relates to a method for preparing a minor-diameter carbon nanotube array on the surface of a flaky material, which belongs to the technical fields of nanometer materials and the preparation process thereof. The method comprises the following steps: the nanoparticles including one or more of Fe, Co, Ni, Cu and Mo (active metals) are dispersed on various flaky materials such as a graphitic sheet, magnesia or layered double hydroxide according to the density (10<8>-10<12> grains/cm<2>), then the chemical vapor deposition is performed, and finally, the carbon nanotube array grows onthe flaky surface. The diameter of the nanotube is less than 20 nm in the array. The method is easy to operate, realizes the mass production of the carbon nanotube array and promotes the industrial application.

The invention relates to the field of manufacturing technology of polycrystalline silicon ingot furnaces, aiming to provide an ingot furnace thermal field structure based on multi-heater and an operation method. The ingot furnace thermal field structure comprises a crucible arranged in a furnace chamber; a thermal field of the crucible comprises a top heater, a side heater, a heat exchanger table located on the bottom of the crucible and a bottom heater located on the bottom of the heat exchange table; an infrared temperature measuring instrument coordinates with the top heater and the side heater; the infrared temperature measuring instrument or a thermoelectric couple coordinates with the bottom heater. An operation process of the operation method comprises a heating stage, a melting stage, a crystal growing stage, an annealing stage and a cooling stage. The ingot furnace thermal field structure and the operation method can effectively monitor the temperature of various portions of the thermal field, regulate power output of various heaters, establish more reasonable temperature gradient, adapt to high-feeding capacity and large-size ingot trend, enable crystal nucleus to form more uniformly during early time of crystal growth, enlarge crystals, reduce crystal boundary, improve crystal direction, reduce energy consumption and finally improve quality of crystal ingots.

The present invention discloses a mixed enzyme production process by solid fermentation of fruits and vegetables and microorganisms and the production process includes the following steps: step one, washing and cleaning fresh fruits and vegetables; step two, juicing the cleaned fruits and vegetables using a juice extractor and obtaining the fruit and vegetable juice and the fruit and vegetable residue; step three, adding water content adjusting raw materials according to different water content of the obtained fruit and vegetable residue to adjust the water content of the fruit and vegetable residue, and mixing the above materials evenly to obtain a base material; step four, putting the step three obtained base material into a fermentation bottle to conduct sterilization; step five, cooling the sterilized fruit and vegetable base material to room temperature, and inoculating microorganism liquid strains to conduct solid fermentation; and step six, after the end of solid fermentation, blending the obtained fruit and vegetable juice into the solid fermented materials, conducting low temperature drying, and thereby obtaining the fruit and vegetable and microorganism mixed enzymes containing both fruit and vegetable enzymes and microbial enzymes. The mixed enzymes can not only fully preserve the enzyme activity of fruits and vegetables, but also obtain the enzyme ingredients of microorganisms, and in addition, the production process can also achieve the full advantage of the entire fruits and vegetables, does not produce any waste, and is ecological and environmental protective.

The integration methods include following integrated parts: method for manufacturing PMOS of epitaxial growth of source and drain poles on silicon germanium by using interval layer of oxide and hard mask of polysilicon as mask; method for manufacturing NMOS of epitaxial growth of source and drain poles on silicon carbon; and removing hard mask safely. The method produces strain source and drain CMOS with interval layer of oxide.

The invention discloses a method for mixed slag smelting reduction recycling and thermal refining, and belongs to the field of non-blast furnace iron making and comprehensive utilization of resources. With the method, pig iron or steel and a phosphorus-rich phase are recycled from mixed slag, and slag thermal refining is carried out. The method comprises the following steps that (1) blast furnace slag and molten steel slag are mixed; (2) gas blowing is carried out to carry out smelting reduction; and (3) separation and recycling are carried out. According to the method, blast furnace slag and the molten steel slag are mixed, then, oxidizing gas is blown to carry out molten reduction iron making, the iron in the mixed slag is recycled, phosphorus-rich phase recycling and slag thermal refining are achieved, and the reduced slag can serve as slag cement or a cement regulator or an additive in cement production or cement clinker, or be used for producing high-value-added cement clinker. The method for mixed slag smelting reduction recycling and thermal refining is short in reaction time, high in metal recycling rate, low in production cost, high in material adaptability, high in handling capacity, friendly to the environment, high in economic benefit, and capable of effectively achieving the purpose of high-efficiency recycling of metallurgical resources and thermal energy, and is a new smelting reduction technology.

The invention relates to a micro-nano-alloy bimetal composite material preparation technique and a device thereof; one of wear-resistant and corrosion-resistant ferrous metal material, non-ferrous metal material and various self-fluxing alloy is prepared into power; then, the powder is added with less than or equal to 0.8% of one or combination in CeO2, Y2O3 and La2O3, 0.3-1.5% of MgO, 0.3-1.8% of CaF2, 0.0-1.5% of B, 0.1-0.8% of Nb, 0.1-1.0% of Ti, 0.1-2.0% of grain refining and recrystallization inhibitor according to the mass percent; or the powder is added with 1-40% of carbide, nitride, micro-nano or nano particles of boride; and the mixture is put into a high-energy stirring ball grinding mill for grinding and ball milling, so that the micro-nano or nano alloy powder can be prepared. A variable frequency induction heating device is adopted for cladding and melting vacuum or inert gas, so that a workpiece can be melted and coated with a micro-nano or nano scale alloy cladding layer which has the grain size of 0.1-35mm and is wear-resistant and corrosion-resistant, and the bimetal composite material can be prepared. The invention overcomes the defects in various coating techniques in China at present, can complete the preparation of the workpiece with the cladding layer having high thickness for once, does not need repeated coating and sintering, has high material utilization rate, low machining allowance and preparation cost, simple preparation technique and high production efficiency.

The invention relates to a preparation method of a single crystal lithium-rich manganese-based anode material. In the process of preparing a single crystal lithium-rich manganese-based anode materialby calcining a lithium-rich manganese-based material precursor, the method comprises the following steps: S1, firstly, pre-sintering the lithium-rich manganese-based material precursor, and carrying out crushing treatment to obtain scattered oxide of the lithium-rich manganese-based material precursor; S2, uniformly mixing the oxide of the lithium-rich manganese-based material precursor with a lithium source and then sintering to obtain the oxide of the lithium-rich manganese-based material precursor. More preferably, a small amount of additive is mixed while mixing lithium after pre-sinteringand crushing; and the mixed additive may induce crystal growth and grain boundary fusion, which is favorable for forming a single crystal and improving the structure of the crystal; pre-sintering andcrushing can reduce the particle diameter to a relatively desirable range, so that the sintered body has better kinetic performance and achieves better mixing uniformity when mixing lithium and mixing the additive, to promote the formation of the single crystal. By means of such a preparation method, a lithium-rich manganese-based anode material having a high degree of single crystallization anda uniform particle diameter can be obtained.

The invention discloses a UiO-66-NH2 composite material as well as a preparation method thereof and an application of the composite material in seawater desalination. The UiO-66-NH2 composite materialcomprises a carrier modified by 3-aminopropyltriethoxysilane and a UiO-66-NH2 film layer, wherein the UiO-66-NH2 film layer is covalently attached to the carrier. According to the preparation methoddisclosed by the invention, the carrier modified by the 3-aminopropyltriethoxysilane is placed into a UiO-66-NH2 film reaction solution for a reaction to obtain the UiO-66-NH2 composite material; andthe UiO-66-NH2 composite material disclosed by the invention has the simple preparation method and excellent seawater desalination treatment performance, and is suitable for large-scale promotion.

The invention discloses a preparing method of metallic roller with surface relief microstructure, which comprises the following steps: (1) applying photo resist on the metallic roller; producing microstructure mask on the photo resist; removing light part until metallic surface emergence through development; (2) placing the processing metallic roller in electromoulding solution; connecting to electrical source negative pole; proceeding metallic electrodeposition with the thickness of deposition at 150-500 nanometer; (3) getting out of metallic roller from electromoulding solution; removing surplus photo resist; getting the metallic roller. This invention combines the photolithographic process and electromoulding to realize the production of metallic roller.

The invention discloses an intelligent WIFI household plantation automatic control system based on a mobile phone APP. The intelligent WIFI household plantation automatic control system includes a master control MCU, a sensor, a camera, a light supplement lamp, a relay, a household router, a cloud server, and the mobile phone APP, the sensor, the camera, and the light supplement lamp are arranged at the planted crops and are connected with the master control MCU, the master control MCU generates control orders based on the received environment variables and transmits the control orders to the light supplement lamp and the relay to respectively control illumination, water volume, and nutrient solution delivery, the household router is connected with the master control MCU, the cloud server is connected with the household router, the master control MCU uploads the received environment variables and the video data to the cloud server via the household router, and the mobile phone APP downloads the data via the cloud server. On the basis of the plantation requirement of different vegetables, the intelligent WIFI household plantation automatic control system inducts the current growth environment, controls the environment input, and realizes scientific plantation.

The invention relates to massive and controllable preparation field of semiconductor type single-walled carbon nanotubes, specifically to a method for directly growing the semiconductor type single-walled carbon nanotube with floating catalyst and auxiliary oxygen. The method comprises the following steps of: taking ferrocene as precursor of the catalyst, taking right amount of sulphur powder as growth promoter, and taking hydrogen as a carrier gas; simultaneously introducing a carbon source gas and small amount of oxygen to grow the single-walled carbon nanotube, and etching the small-diameter and metallic single-walled carbon nanotube in situ; and finally, obtaining a sample in which the semiconductor type single-walled carbon nanotube is dominant, wherein content of the semiconductor type single-walled carbon nanotube is 90 wt%, and diameter distribution of the semiconductor type single-walled carbon nanotube is 1.4-1.8 nm. With the method, massive and directly controlled growth ofthe semiconductor type single-walled carbon nanotube with narrower diameter distribution is realized; and the method solves the problems, such as that the separation process of the existing chemical and physical methods seriously damages the intrinsic structure of the single-walled carbon nanotube and the process is complex, and sample amount is less, diameter distribution is wider and the diameter is smaller in the direct preparation technology, and the like.

The invention discloses a method for manufacturing a patterned metal film based on poly-dopamine and a product thereof. The manufacture method comprises the steps that first, a clean substrate is dipped in a dopamine solution with the pH value of 6-9 and the concentration of 0.1-10 mg/ml till a poly-dopamine film is formed on the surface of the substrate; the substrate is taken out, is washed with water and then is blow-dried with nitrogen, so that the substrate adhered with the poly-dopamine film is obtained; then a photomask is placed on the substrate adhered with the poly-dopamine, and then the substrate is radiated for 3-15 minutes in the ultraviolet light with the intensity of 10-35 mw/cm<2>, is cleaned with double distilled water, and is blow-dried with nitrogen, so that a substrate with an ultraviolet oxidized poly-dopamine is obtained; and finally metal ions are deposited on the substrate with the ultraviolet oxidized poly-dopamine. The method disclosed by the invention is applicable to any solid materials which can be both planar substrates and curved or porous surface substrates, and different pattered metal films can be manufactured; and the manufactured patterned metal films can be applied to microcircuits, microarrays and bioinstrumentation.