Large grain organic and inorganic hybrid perovskite film preparation method

A perovskite, large-grain technology, applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electrical components, etc., can solve the problems of restricting development, high energy consumption, and high cost, achieve low equipment requirements, improve device performance, The effect of reducing internal defects

CN106159088AActive Publication Date: 2016-11-23NANJING UNIV OF TECH
4 Cites 17 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2016-11-23

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a large grain organic and inorganic hybrid perovskite film preparation method, belonging to the perovskite type solar battery and correlated photoelectric semiconducting material field, and can prepare a uniform and compact large grain film through the steps of configuration of an organic and inorganic hybrid perovskite precursor solution, stirring and heating, spin coating, annealing, etc. The method requires no spin coating in a multistep approach, ca easily control the temperature of a room temperature substrate, has no strict requirements on an annealing and cooling rate, and can manufacture a film efficiently. The method realizes virtual grain film growth through adjusting the grain dimension of a perovskite light-absorption layer, thereby reducing grain inner defects, and increasing the carrier transport efficiency; in addition, the method controls grain boundary defects, greatly improves perovskite crystal film environment stability, and enhances perovskite thin-film device performances. A perovskite type virtual monocrystalline film prepared in the low temperature solution method can assemble hysteresis free, efficient and stable perovskite type solar batteries and correlated film transistor, electroluminescent and laser emission photoelectric semiconductor devices.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the field of perovskite solar cells and related optoelectronic semiconductor materials, more specifically, relates to a method for preparing a large-grain organic-inorganic hybrid perovskite film, which realizes the growth of a virtual crystal film and prepares a high-performance film by a low-temperature solution method. Stable perovskite optoelectronic semiconductor thin films. Background technique

[0002] Today, with the depletion of fossil energy and the increasingly serious environmental problems, the development and utilization of solar energy and other renewable energy have always been paid attention to. With technological advancements in the field of solar photovoltaics, solar energy has become even more promising. Traditional silicon-based solar cells face high cost and high energy consumption, which severely restricts their further development. The new all-solid-state perovskite solar cells using organometallic hal...

Examples

Embodiment 1

[0039] A method for preparing a large-grain organic-inorganic hybrid perovskite film, the preparation method comprising the following steps:

[0040] (1) Solvent DMSO with a certain mass fraction is configured as the perovskite precursor liquid for standby;

[0041] (2) The precursor material CH 3 NH 3 I·PbI 2 Dissolved in the perovskite precursor solution in the step (1), forming a yellow solution for subsequent use;

[0042] (3) Configure the perovskite precursor solution in the step (2) into a chemical formula of CH 3 NH 3 PB 3-x Br x Organic-inorganic hybrid perovskites, where 0≤x≤3.

[0043] (4) heating the organic-inorganic hybrid perovskite obtained in the step (3) to above 130° C. under magnetic stirring conditions, and keeping it for 1 to 3 minutes;

[0044] (5) drop the solution obtained in the step (4) onto the prepared substrate, and spin-coat at a speed of 2500rpm for 25s to obtain a perovskite film;

[0045] (6) The perovskite film was annealed at 150°C ...

Embodiment 2

[0056] A method for preparing a large-grain organic-inorganic hybrid perovskite film, the preparation method comprising the following steps:

[0057] (1) configure the mixed solution of DMSO and DMF of a certain mass fraction as a solvent, and use the solvent as a perovskite precursor solution for subsequent use;

[0058] (2) The precursor material CH 3 NH 3 I, PbI 2 Dissolved in the perovskite precursor solution in the step (1), forming a yellow solution for subsequent use;

[0059] (3) Configure the perovskite precursor solution in the step (2) into a chemical formula of CH 3 NH 3 PB 3-x Br x The organic-inorganic hybrid perovskite, where 0≤x≤3.

[0060] (4) heating the organic-inorganic hybrid perovskite obtained in the step (3) to above 130° C. under magnetic stirring conditions, and keeping it for 1 to 3 minutes until the spin coating is completed;

[0061] (5) drop the solution obtained in the step (4) onto the prepared substrate, and spin-coat for 30s at a rotat...

Embodiment 3

[0067] A method for preparing a large-grain organic-inorganic hybrid perovskite film, the preparation method comprising the following steps:

[0068] (1) Configure a mixed solution of DMSO and GBL with a certain mass fraction as a solvent, and use the solvent as a perovskite precursor solution for subsequent use;

[0069] (2) The precursor material CH 3 NH 3 I·PbI 2 Dissolved in the perovskite precursor solution in the step (1), forming a yellow solution for subsequent use;

[0070] (3) Configure the perovskite precursor solution in the step (2) into a chemical formula of CH 3 NH 3 PB 3-x Cl x The organic-inorganic hybrid perovskite, where 0≤x≤3.

[0071] (4) heating the organic-inorganic hybrid perovskite obtained in the step (3) to above 130° C. under magnetic stirring conditions, and keeping it for 1 to 3 minutes until the spin coating is completed;

[0072] (5) drop the solution obtained in the step (4) onto the prepared substrate, and spin coat at a speed of 4000r...