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Stimulation device for sleep apnea prevention, detection and treatment

An implantable cardiac stimulation device comprises a metabolic demand sensor, an activity sensor, and one or more pulse generators. The metabolic demand sensor and activity sensor can sense metabolic demand and physical activity parameters, respectively. The pulse generators can generate cardiac pacing pulses with timing based on a comparison of the metabolic demand and physical activity parameters. The timed cardiac pacing pulses can prevent a sleep apnea condition.
Owner:PACESETTER INC

Multiple remote display system

A multi-display system includes a host system that supports both graphics and video based frames for multiple remote displays, multiple users or a combination of the two. For each display and for each frame, a multi-display processor responsively manages each necessary aspect of the remote display frame. The necessary portions of the remote display frame are further processed, encoded and where necessary, transmitted over a network to the remote display for each user. In some embodiments, the host system manages a remote desktop protocol and can still transmit encoded video or encoded frame information where the encoded video may be generated within the host system or provided from an external program source. Embodiments integrate the multi-display processor with either the video decoder unit, graphics processing unit, network controller, main memory controller, or any combination thereof The encoding process is optimized for network traffic and attention is paid to assure that all users have low latency interactive capabilities.
Owner:III HLDG 1

Method of controlling the film properties of a CVD-deposited silicon nitride film

We have discovered that adding H2 to a precursor gas composition including SiH4, NH3, and N2 is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface of a-SiNx:H films which are deposited on a substrate by PECVD. Wet etch rate is an indication of film density. Typically, the lower the wet etch rate, the denser the film. The addition of H2 to the SiH4 / NH3 / N2 precursor gas composition did not significantly increase the variation in deposited film thickness across the surface of the substrate. The a-SiNx:H films described herein are particularly useful as TFT gate dielectrics in the production of flat panel displays. The uniformity of the film across the substrate enables the production of flat panel displays having surface areas of 25,000 cm2 and larger.
Owner:APPLIED MATERIALS INC

Method for forming thin film

Method for forming a thin film at low temperature by using plasma pulses is disclosed. While a purge gas or a reactant purge gas activated by plasma is continuously supplied into a reactor, a source gas is supplied intermittently into the reactor during which period plasma is generated in the reactor so that the source gas and the purge gas activated by plasma reacts, so that a thin film is formed according to the method. Also, a method for forming a thin layer of film containing a plural of metallic elements, a method for forming a thin metallic film containing varied contents by amount of the metallic elements by using a supercycle Tsupercycle comprising a combination of simple gas supply cycles Tcycle, . . . , and a method for forming a thin film containing continuously varying compositions of the constituent elements by using a supercycle Tsupercycle comprising a combination of simple gas supply cycles Tcycle, . . . , are disclosed. The methods for forming thin films disclosed here allows to shorten the purge cycle duration even if the reactivity between the source gases is high, to reduce the contaminants caused by the gas remaining in the reactor, to form a thin film at low temperature even if the reactivity between the source gases is low, and also to increase the rate of thin film formation.
Owner:ASM GENITECH KOREA

Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches

A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top / bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing either one of but not both of the top / bottom portion and the sidewall portion of the film by wet etching which removes the one of the top / bottom portion and the sidewall portion of the film more predominantly than the other according to the different chemical resistance properties.
Owner:ASM IP HLDG BV

Method for manufacturing a polycrystalline dielectric layer

A method manufactures a capacitor having polycrystalline dielectric layer between two metallic electrodes. The dielectric layer is formed by a polycrystalline growth of a dielectric metallic oxide on one of the metallic electrodes. At least one polycrystalline growth condition of the dielectric oxide is modified during the formation of the polycrystalline dielectric layer, which results in a variation of the polycrystalline properties of the dielectric oxide within the thickness of said layer.
Owner:STMICROELECTRONICS (CROLLES 2) SAS

Apparatus and method for thin film deposition

Disclosed herein is a thin film deposition apparatus having a reaction chamber for forming a thin film on a plurality of substrates rested on a susceptor. The apparatus comprises: a gas supply means for supplying a plurality of gases to the inside of the reaction chamber from the outside, the gases including a reaction gas; a gas distribution means for distributing and spraying the gases supplied from the gas supply means so as to conform to the purpose of a process; a gas retaining means having a plurality of reaction cells for partitionally accommodating and retaining the respective gases distributed from the gas distribution means; a rotation driving means for rotating the gas retaining means such that the gases retained in the respective reaction cells are exposed to the substrates in sequence; and a gas exhaust means for pumping the gases retained by the gas retaining means to the outside of the reaction chamber.
Owner:KOOKJE ELECTRIC KOREA

Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches

A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top / bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing either one of but not both of the top / bottom portion and the sidewall portion of the film by wet etching which removes the one of the top / bottom portion and the sidewall portion of the film more predominantly than the other according to the different chemical resistance properties.
Owner:ASM IP HLDG BV

Antimicrobial silver compositions

The present invention comprises methods and compositions for antimicrobial silver compositions comprising silver nanoparticles. The present invention further comprises compositions for preparing silver nanoparticles comprising at least one stabilizing agent, one or more silver compounds, at least one reducing agent and a solvent. In one aspect, the stabilizing agent comprises a surfactant or a polymer. The polymer may comprise polymers such as polyacrylamides, polyurethanes, and polyamides. In one aspect, the silver compound comprises a salt comprising a silver cation and an anion. The anion may comprise saccharinate derivatives, long chain fatty acids, and alkyl dicarboxylates. The methods of the present invention comprise treating devices with the silver nanoparticle compositions, including, but not limited to, such devices as woven wound care materials, catheters, patient care devices, and collagen matrices. The present invention further comprises treatment of humans and animals wacr6ith the antimicrobial devices described herein.
Owner:AVENT INC

Target information generation and ad server

InactiveUS7155508B2Increase ratingsGreater profit margin for ad companiesDigital computer detailsTransmissionMass storageApplication software
An advertisement selection and delivery system for selecting advertisements based on profile information and rendering the advertisements as accessible to a user operating a network-capable appliance connected to a data-packet-network is provided. The system comprises, a first server node connected to the network, the first server node functioning as a user access point on the network, a mass storage repository accessible to the first server node, the repository for storing and serving user profile data, a second server node connected to the network, the second server node for generating user preference data, at least one advertisement server connected to the network, the advertisement server for serving advertisement data, a software application for generating user preference lists and performing advertisement selection and at least one network-capable appliance connected to the network the network-capable appliance for receiving the advertisement data. A user operating the network-capable appliance accesses the first server node and receives the advertisement data, the advertisement data selected for service by matching the user preference data to stored advertisements and rendered accessible to the user during the time of user access to the system from the network-capable appliance.
Owner:YODLEE COM INC
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