237 results about "Film density" patented technology

We have discovered that adding H₂ to a precursor gas composition including SiH₄, NH₃, and N₂ is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface of a-SiN_x:H films which are deposited on a substrate by PECVD. Wet etch rate is an indication of film density. Typically, the lower the wet etch rate, the denser the film. The addition of H₂ to the SiH₄/NH₃/N₂ precursor gas composition did not significantly increase the variation in deposited film thickness across the surface of the substrate. The a-SiN_x:H films described herein are particularly useful as TFT gate dielectrics in the production of flat panel displays. The uniformity of the film across the substrate enables the production of flat panel displays having surface areas of 25,000 cm² and larger.

Methods of forming dielectric films with increased density and improved film properties are provided. The methods involve exposing dielectric films to microwave radiation. According to various embodiments, the methods may be used to remove hydroxyl bonds, increase film density, reduce or eliminate seams and voids, and optimize film properties such as dielectric constant, refractive index and stress for particular applications. In certain embodiments, the methods are used to form conformal films deposited by a technique such as PDL. The methods may be used in applications requiring low thermal budgets.

An active matrix type organic light emitting diode display serving as a bottom emission type device coupling out emission of an organic electroluminescence layer from a substrate where thin film transistors are formed or as a top emission type device coupling out the emission on the opposite side to the substrate. In a suitable layer (102, 106, 107) in each device, an insulating film containing SiO is formed. The insulating film is porous with nano pores in the film. The porous insulating film is controlled as to film density, film refractive index, nano pore diameter in film, average nano pore diameter in film and maximum nano pore diameter in film so that the refractive index is lower than that of a transparent electrode or a transparent substrate of the display holding the organic electroluminescence layer therebetween, and nano pores are present in the film. Light scattering effect can be obtained so that emission from the organic electroluminescence layer (110) can be coupled out to the outside efficiently.

Electric characteristics of a semiconductor device using an oxide semiconductor are improved. Further, a highly reliable semiconductor device in which a variation in electric characteristics with time or a variation in electric characteristics due to a gate BT stress test with light irradiation is small is manufactured. A transistor includes a gate electrode, an oxide semiconductor film overlapping with part of the gate electrode with a gate insulating film therebetween, and a pair of electrodes in contact with the oxide semiconductor film. The gate insulating film is an insulating film whose film density is higher than or equal to 2.26 g/cm³ and lower than or equal to 2.63 g/cm³ and whose spin density of a signal with a g value of 2.001 is 2×10¹⁵ spins/cm³ or less in electron spin resonance.

One embodiment of an organic electroluminescent element of present invention includes a substrate, a first electrode on the substrate, an organic luminescent medium layer including an organic luminescent layer on the first electrode, a second electrode on the organic luminescent medium layer and barrier film formed on the second electrode. The organic luminescent medium layer is sandwiched between the first electrode and the second electrode. Film density of the barrier film changes in thickness direction.

An insulating film having dielectric constant not greater than 2.7 is provided above a semiconductor substrate. A via comprises a conductive material, which is provided in a via hole formed in the insulating film. A first interconnection comprises a conductive material, which is provided in an interconnection trench formed on the via in the insulating film. A first high-density region is formed in the insulating film, and has a cylindrical shape surrounding the via, an inner surface common to the boundary of the via hole, and a film density higher than the insulating film.

The present invention provides a component for a plasma processing apparatus, the component comprising: a base material; an underlayer covering a surface of the base material; and an yttrium oxide film covering a surface of the underlayer, wherein the underlayer comprises a metal oxide film having a thermal conductivity of 35 W/m·K or less, the yttrium oxide film contains at least either particulate portions made of yttrium oxide or non-particulate portions made of yttrium oxide, the particulate portions being portions where a grain boundary demarcating an outer portion of the grain boundary is observed under a microscope, and the non-particulate portions being portions where the grain boundary is not observed under a microscope, the yttrium oxide film has a film thickness of 10 μm or more and a film density of 96% or more, and when a surface of the yttrium oxide film is observed under a microscope, an area coverage ratio of the particulate portions is 0 to 20% in an observation range of 20 μm×20 μm and an area coverage ratio of the non-particulate portions is 80 to 100% in the observation range.

Disclosed herein is a photocatalytic coating composition that enables control of refractive index, film density and hydrophilicity and gives a film with improved strength and adhesion. The photocatalytic coating composition comprises: (1) an alkali silicate aqueous solution having: (A) a molar ratio of silicon to an alkali (SiO2/(A2O+B) (A: alkali metal, B: NH3)) in the range of 4 to 30; and (B) a silicon concentration in terms of oxide (SiO2 concentration) in the range of 6.8 to 30% by weight; and (2) a photocatalytic compound.

Ta₂O₅ and Al₂O₃ thin films were fabricated by pulsed plasma-enhanced chemical vapor deposition (PECVD) with simultaneous delivery of O₂ and the metal precursor. By appropriately controlling the gas-phase environment self-limiting deposition at controllable rates (˜1 Å/pulse) was obtained. The process was insensitive to substrate temperature, with a constant deposition rate observed from 90-350° C. As-deposited Ta₂O₅ films under these conditions displayed good dielectric properties. Performance improvements correlate strongly with film density and composition as measured by spectroscopic ellipsometry and Fourier transform infrared spectroscopy. Pulsed PECVD eliminates the need for gas actuation and inert purge steps required by atomic layer deposition.

A seed crystal for silicon carbide single crystal growth (13) which is attached to the lid of a graphite crucible charged with a raw material silicon carbide powder. The seed crystal includes a seed crystal (4) formed of silicon carbide having one surface defined as a growth surface (4a) for growing a silicon carbide single crystal by a sublimation method, and a carbon film (12) formed on the surface (4b) opposite to the growth surface of the seed crystal (4). Further, the film density of the carbon film (12) is 1.2 g/cm³ to 3.3 g/cm³.

Embodiments described herein relate to a method for processing a substrate. In one embodiment, the method includes introducing a gas mixture comprising a hydrocarbon source and a diluent gas into a deposition chamber located within a processing system, generating a plasma from the gas mixture in the deposition chamber at a temperature between about 200° C. and about 700° C. to form a low-hydrogen content amorphous carbon layer on the substrate, transferring the substrate into a curing chamber located within the processing system without breaking vacuum, and exposing the substrate to UV radiation within the curing chamber at a curing temperature above about 200° C.

The thermo-optic phase shifter (200) according to an exemplary aspect of the invention includes: a substrate (201); a sacrificial layer (202) formed above the substrate (201); a first cladding layer (203) formed above the sacrificial layer (202) and having a film density higher than that of the sacrificial layer (202); an optical waveguide core (204) formed above the first cladding layer (203); a second cladding layer (205) provided over the first cladding layer (203) to cover the optical waveguide core (204); a heat-generating heater (206) provided to a region of the second cladding layer (205) directly above the optical waveguide core (204); and a groove (207) formed in a side face region of the optical waveguide core (204) and extending from the surface of the second cladding layer (205) to the surface of the substrate (201).

Disclosed is a transparent conductive film, including a substrate and, formed on at least one surface of the substrate, a gas barrier layer and a transparent conductive layer, wherein the gas barrier layer is formed of a material containing at least oxygen atoms, nitrogen atoms, and silicon atoms, and includes a surface layer part which has an oxygen atom fraction of 60 to 75%, a nitrogen atom fraction of 0 to 10%, and a silicon atom fraction of 25 to 35%, each atom fraction being calculated with respect to the total number of the oxygen atoms, nitrogen atoms, and silicon atoms contained in the surface layer part and which has a film density of 2.4 to 4.0 g/cm³.

Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.

A biaxially oriented laminate film including a core layer including a blend of crystalline polylactic acid polymer and a metal salt phosphorus-containing compound nucleating agent which is biaxially oriented at low transverse direction orientation temperatures to impart a degree of cavitation around the metal salt phosphorus-containing metal such that a white opaque cavitated appearance and a lower film density and improved mechanical properties are obtained. The laminate film could further have additional layers such as a heat sealable layer disposed on one side of said core layer including an amorphous polylactic acid resin and/or a polylactic acid resin-containing layer disposed on the side of the core layer opposite the heat sealable layer, a metal layer, or combinations thereof.

Disclosed is a semiconductor device which includes a base substrate; a lower electrode formed on a main surface of the base substrate; and an insulating film formed over the lower electrode and the main surface of the base substrate. The insulating film has a contact hole defined by a wall extending upwardly from the top surface of the lower electrode. The insulating film has a film density distribution in which a film density decreases with increasing distance from the main surface of the base substrate in the thickness direction. A width of the contact hole increases as the film density decreases.

A manufacturing method for a semiconductor device includes generating on a substrate liquid-phase silanol having fluidity by causing a source gas made of a material containing silicon to react with a source gas made of a material containing oxygen, introducing the silanol into a first recess having an aspect ratio of a predetermined value wholly, and introducing the silanol into a space from a bottom to an intermediate portion in a second recess having an aspect ratio lower than the predetermined value, the first and second recesses are provided in the substrate, burying a silicon oxide film in the first recess and providing the silicon oxide film in the second recess by converting the silanol into the silicon oxide film by dehydrating condensation, and providing a dielectric film having film density higher than that of the silicon oxide film on the silicon oxide film.

Embodiments described herein relate to methods for forming flowable chemical vapor deposition (FCVD) films suitable for high aspect ratio gap fill applications. Various process flows described include ion implantation processes utilized to treat a deposited FCVD film to improve dielectric film density and material composition. Ion implantation processes, curing processes, and annealing processes may be utilized in various sequence combinations to form dielectric films having improved densities at temperatures within the thermal budget of device materials. Improved film quality characteristics include reduced film stress and reduced film shrinkage when compared to conventional FCVD film formation processes.

The present invention relates to a composition for forming a low dielectric insulating film for a semiconductor device, particularly to an organosilicate polymer prepared by mixing a thermally decomposable organic silane compound that is capped with a silane compound at both its ends, and a common silane compound or silane oligomer, and then adding water and a catalyst to conduct hydrolysis and condensation, as well as to a coating composition for an insulating film for a semiconductor device comprising the same, a coating composition for an insulating film for a semiconductor device further comprising a pore-forming organic substance, a method for preparing an insulating film for a semiconductor device by coating the composition and curing, and a semiconductor device comprising a low dielectric insulating film prepared by the method. The organosilicate polymer prepared according to the present invention has superior thermal stability and mechanical strength; an insulating film-forming composition comprising the same can be used for an interlayer insulating film for low dielectric wiring that can contribute to a high speed semiconductor, reduce power consumption, and remarkably decrease cross-talk between metal wiring; and a film obtained by applying the composition to an insulating film has superior coating properties, inhibits phase-separation, can easily control minute pores because organic substances are thermally decomposed to form pores during a curing process, and has superior insulating properties and a remarkably decreased film density.

Disclosed are a novel dye, having a dispersant functional group to simultaneously exhibit a dye function and a dispersant function, and a dye-sensitized solar cell including the same. According to this invention, the dye may simultaneously manifest a dye function for absorbing light, made possible by being adsorbed on the entire surface of metal oxide particles, to thus produce excited electrons which are then transferred into a conduction band of metal oxide, and a dispersant function for preventing the agglomeration of the particles to thus improve the uniformity of the metal oxide particles in a paste and film density.

The invention provides a neodymium iron boron magnet with the surface plated with an anti-corrosion layer. The neodymium iron boron magnet comprises a neodymium iron boron magnet body, a multi-arc ionclad layer compounded on the surface of the neodymium iron boron magnet body, and a magnetron sputtering clad layer compounded on the surface of the multi-arc ion clad layer. The invention further provides a method for neodymium iron boron magnet surface plating. Multi-arc ion plating is only adopted in the magnet surface firstly, bottoming flattening is conducted on the magnet surface, the manner of secondary plating through magnetron sputtering is adopted, the multi-arc plating efficiency is high, good film combining and magnetron sputtering film density are effectively combined, the density of the clad layer is improved, the anti-corrosion performance of the film is improved, and the neodymium iron boron magnet with the surface plated with the anti-corrosion layer is obtained. The provided method for neodymium iron boron magnet surface plating, the technology is simple, and the method is suitable for large-scale industry production.

In a variable resistance nonvolatile storage element, an electrode suitable for a variable resistance operation and formed of a metallic nitride layer containing Ti and N is provided. In a nonvolatile storage device including: a first electrode; a second electrode; and a variable resistance layer which is sandwiched between the first electrode and the second electrode and in which a resistance value changes to two different resistance states, at least one of the first electrode and the second electrode is an electrode including a metallic nitride layer containing at least Ti and N, and a mole ratio (N/Ti ratio) between Ti and N in at least a part of the metallic nitride layer, the part being in contact with the variable resistance layer is 1.15 or more and a film density is 4.7 g/cc or more.