39 results about "Film density" patented technology

A biaxially oriented cavitated PHA-rich composite film comprises a PHA-rich core layer and a first outer skin layer and a second outer skin layer. The core layer comprises a PHA resin at an amount of more than 50 wt % of a total weight of the polymeric resin in the core layer and a modifier X, the modifier X includes PLA resins and PLA copolymers and at least one mineral inorganic cavitating agent; the first outer skin layer comprises a PLA resin at an amount less than 50 wt % of the total weight of the outer layer and biopolymers comprising PHA resins or PBSA resins or PCL resins or mixture thereof. The PHA-rich composite film shows a reduced film density and higher yield as well as low light transmission rate.

The invention discloses a solid oxide fuel cell electrolyte thin film and a preparation method thereof, the electrolyte thin film sequentially comprising a transition layer, a self-repairing layer and a compact layer is formed on the surface of one side of a substrate, the transition layer is made into a film through a solid-liquid phase forming process, and first sintering is carried out to obtain the solid oxide fuel cell electrolyte thin film, the self-repairing layer and the compact layer are obtained through the vacuum sputtering coating process at the room temperature, and the compact and thin electrolyte film is obtained at the low preparation temperature, so that the energy consumption cost can be reduced, and commercialized application is facilitated. According to the preparation method, relatively good film-substrate binding force and film compactness can be realized, pores and cracks are not easy to generate under extreme conditions, and the prepared electrolyte film is relatively flat in surface and can realize relatively good interface contact.

A preparation method of a 7B04 aluminum alloy surface in-situ synthesis microparticle enhanced thermal control function film layer can effectively improve the density of the film layer, meanwhile, the film layer is high in infrared emissivity and good in thermal control function, and comprises the steps that firstly, the 7B04 aluminum alloy surface, copper oxide and chromic oxide are pretreated, then a micro-arc oxidation electrolyte is prepared, and the 7B04 aluminum alloy surface is subjected to in-situ synthesis; the pretreated 7B04 aluminum alloy is placed in a stainless steel electrolytic cell of micro-arc oxidation equipment, then the micro-arc oxidation electrolyte is added into the stainless steel electrolytic cell, micro-arc oxidation treatment is conducted on the aluminum alloy through a micro-arc oxidation power source, the electrolyte is continuously stirred in the oxidation treatment process, and the aluminum alloy is subjected to micro-arc oxidation treatment; and finally, obtaining an in-situ synthesized microparticle reinforced thermal control functional film layer on the surface of the 7B04 aluminum alloy, washing the film layer with deionized water, and naturally airing the film layer to obtain the 7B04 aluminum alloy. The composition of the micro-arc oxidation electrolyte is designed, in the growth process of a micro-arc oxidation film layer, copper chromite black particles are synthesized in situ through chemical reaction, the particles and the film layer are metallurgically bonded, and the method has actual application and popularization value.

Provided is a heat-shrinkable polyester film having a high thermal shrinkage in the main shrinkage direction, a high film puncture strength, a high density, and thus an excellent elastic feeling, and a high bag breaking resistance when a bottle falls. A heat-shrinkable polyester film containing 60 mol% or more and 95 mol% or less of terephthalic acid ethylene glycol units in 100 mol% of all ester units, 5 mol% or more and 40 mol% or less of diethylene glycol in 100 mol% of polyol components, and 0 mol% or more and 5 mol% or less of constituent units derived from a monomer component capable of becoming an amorphous component in all polyester resin components, the film having a hot water heat shrinkage rate when immersed in hot water at 90°C for 10 seconds, a film puncture strength, a film density, and a refractive index in the film length direction within a prescribed range.

The invention provides a characterization method of dielectric film density. The characterization method comprises the following steps: preparing a dielectric film layer on a silicon wafer; measuring the refractive index of the dielectric film layer through a refractive index measuring device, and obtaining first refractive index data; soaking the dielectric film layer in a solution for a first preset time; after the dielectric film layer is taken out, surface moisture of the dielectric film layer is removed; measuring the refractive index of the dielectric film layer through refractive index measuring equipment; measuring the refractive index of the soaked dielectric film layer through refractive index measuring equipment, and obtaining second refractive index data; the refractive index difference value of the first refractive index data and the second refractive index data is calculated, the smaller the refractive index difference value is, the higher the density of the dielectric film layer is, and the larger the refractive index difference value is, the lower the density of the dielectric film layer is. The dielectric film structure density characterization is carried out by using the method provided by the invention, so that the thin film with high refractive index and loose film quality can be effectively screened out, and meanwhile, the preparation process of the high-density dielectric film can be better guided.

The present application relates to an article having a water / oil repellent surface layer. An article is provided, which is composed of a glass substrate, a base layer of a silicon oxide as a main component formed on the outer surface of the glass substrate, and a water / oil repellent surface layer formed on the outer surface of the silicon oxide base layer, in which the film density of the silicon oxide base layer is 1.8 to 2.2 g / cm 3 , and the water / oil repellent surface layer is a water / oil repellent surface layer excellent in water / oil repellency, abrasion resistance (eraser abrasion durability), and sliding properties, which is composed of a cured product of a fluorine-containing polyether group-containing polymer having a hydrolyzable silyl group of a specific structure and / or a partial hydrolysis condensate thereof as a main component.

[Problem] To provide a method for manufacturing a cured film having high film density, high film hardness and high etching resistance.[Means for Solution] A method for manufacturing a cured film comprising (1) applying a composition (i) above a substrate; (2) forming a hydrocarbon-containing film from the composition (i); and (3) irradiating the hydrocarbon-containing film with plasma, electron beam and / or ion to form a cured film. Use of the cured film.

A bottom of a trench is an Si plane or a C plane while sidewalls of the trench are an m-plane. In the trench, a gate electrode is provided via a gate insulating film. The gate insulating film is a HTO film with a thickness of at least 50 nm. By a post-HTO-deposition annealing at a temperature in a range of 1250 degrees C. to 1300 degrees C. under a mixed gas atmosphere containing nitric oxide, nitrogen, and oxygen, the film density of the gate insulating film is within a range of 2.21 g / cm3 to 2.38 g / cm3. The total oxygen flow amount of the mixed gas atmosphere of the post-HTO-deposition annealing is at most 5%. The gate insulating film has a two-layer structure including a low-density film that is within 3 nm from a SiC / SiO2 interface and has a relatively low film density, and a high-density film that is at least 3 nm apart from the SiC / SiO2 interface and has a relatively high film density.

The invention provides an alkali metal halide gradient doped perovskite light absorption layer and a full-vacuum preparation method and application thereof, and belongs to the technical field of perovskite materials. The technical concept of gradient doping-step deposition-synergistic passivation is provided, a vacuum evaporation mode is adopted, and the multi-dimensional contradiction between materials and the technology is overcome by combining alkali metal gradient doping and halogen / pseudo-halogen synergistic passivation; an inorganic framework deposition-organic phase vapor infiltration two-step method is adopted in the process level, temperature conflicts are avoided, and the density of the thin film is improved; rb < + > gradient doping is introduced in material design to form a built-in electric field to inhibit Br <-> migration, and meanwhile, a [K-F] < + + > coordination network and Lewis acid-base passivation sites are constructed through K < + > / F- / SCN <-> co-doping, so that the defect density is reduced.

The invention relates to a display device, an electronic device, and a method for manufacturing the display device. The display device includes: a substrate including an emission area and a non-emission area; a display element layer including an emission layer disposed in the emission area of the substrate; the thin film encapsulation layer is arranged on the display element layer, and the thin film encapsulation layer comprises a first encapsulation layer, a second encapsulation layer and a third encapsulation layer; and a polarizing film disposed on the thin film encapsulation layer. The third encapsulation layer includes: a first layer having a hole; a second layer disposed on the first layer and having a film density higher than that of the first layer; and a third layer disposed on the second layer and having a hole.

A camera element includes a photoelectric conversion section 23 formed by laminating a first electrode 21, a photoelectric conversion layer 23A formed of an organic material, and a second electrode 22. An inorganic oxide semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A, includes a first layer 23C and a second layer 23D from the first electrode side, and satisfies ρ1 ≥ 5.9 g / cm 3 and ρ1 - ρ2 ≥ 0.1 g / cm 3 when an average film density of the first layer 23C within 3 nm from an interface between the first electrode 21 and the inorganic oxide semiconductor material layer 23B is set as ρ1 and an average film density of the second layer 23D is set as ρ2.

A substrate processing method for forming a carbon-containing film that is inhibited from film peeling due to thermal treatment is provided. The substrate processing method includes: preparing a substrate having a foundation film; forming a carbon-containing film having a film density of 2 g / cm3 or greater on the foundation film by forming a plasma of a processing gas containing a carbon-containing gas; and subjecting the substrate on which the carbon-containing film is formed to thermal treatment. In the forming of the carbon-containing film, for a first time from a start of the forming of the carbon-containing film, an ion energy higher than the ion energy during a second time from an end of first time is supplied to the substrate.

The present disclosure provides a novel high-angle anti-reflective porous film having less surface gloss in a high-angle region of an incident angle and a reflection angle exceeding 60°, and a novel high-angle anti-reflective laminate provided with the high-angle anti-reflective porous film on a substrate, and the like. The high-angle anti-reflective porous film of the present disclosure has a film density of 50 to 650 kg / m 3 , and has a BET specific surface area of 0.40 to 1.20 m 2 / g (according to JIS Z8830 (2013)). The 85-degree specular glossiness of one surface of the above high-angle anti-reflective porous film is preferably 0.0% or more and 0.8% or less.

The present invention relates to a dielectric film activator, and a semiconductor substrate and semiconductor device fabricated using the same. According to the present invention, by using a dielectric film activator capable of increasing thin film density while reducing the content of by-product carbon compound between a precursor and reaction gas injected into a dielectric film, the capacitance of a dielectric film may be improved, and thin film density may be increased by a simple process.

Provided is a method for producing a cured film having high film density, high film hardness, and high etching resistance. A method of making a cured film comprising (1) applying a composition (i) over a substrate; (2) forming a hydrocarbon-containing film from composition (i); and (3) irradiating the hydrocarbon-containing film with plasma, electron beams and / or ions to form a cured film. Use of the cured film.

This application relates to the field of quantum dot light-emitting diodes (QLEDs), disclosing a highly dense quantum dot film, its fabrication method, and QLED light-emitting devices and display devices. This application introduces rigid steric materials such as fullerenes, which are smaller in volume than quantum dots and have a diameter of 0.2-2 nm, into the quantum dots to fill the gaps between them. Compared to conventional quantum dot films, the spin-coated quantum dot film produced by this method exhibits significantly improved morphology and better film density.

The application discloses a preparation method of a flexible thermoelectric film, and belongs to the technical field of thermoelectric material preparation. The method aims to solve the problems of poor slurry dispersibility, low film density and damage to the flexible substrate after high-temperature post-processing in the existing printing process. The core steps include: compounding Tween and a polyvinyl alcohol aqueous solution into a mixed solution, adding Ag2Q powder to prepare printing slurry, wherein Q is selenium or tellurium; coating the slurry on flexible substrates such as cloth and paper through silk screen printing; and finally realizing film layer densification at low temperature by ultrasonic welding. The application guarantees the stability of the slurry through the innovative "Tween-polyvinyl alcohol" compounding system, and realizes high density (porosity ≤ 5%) while perfectly protecting the substrate by using the ultrasonic welding low-temperature process. The method is simple in process, low in cost, and wide in substrate adaptability, and the prepared film has high thermoelectric performance and excellent flexibility, and is suitable for wearable devices and flexible electronic devices.

The invention discloses a ceramic film online thickness closed-loop control system and method based on machine learning, and the method comprises the steps: in the production process of a ceramic film, a film thickness sensor and image recognition equipment monitor the film thickness, the film weight and the film density in real time, and transmit data to an AI diagnosis module; after being preprocessed, the data are input into a machine learning model to analyze the film thickness change trend, and abnormality is automatically diagnosed; according to the AI diagnosis result and the film thickness deviation, the system calculates the adjustment amount, generates a control signal, and transmits the control signal to the execution module through the feedback module to adjust production parameters; after adjustment is completed, online detection continues to be carried out; in combination with the relation of film weight, film thickness and film density, a dynamic coupling control strategy is adopted, film thickness control is automatically adjusted, and the stability of the production process is ensured; according to the ceramic film online thickness closed-loop control system and method based on machine learning, the technical target is achieved through real-time detection, feedback and closed-loop control execution.

The present invention relates to a thin film formation method, and a semiconductor substrate and semiconductor device manufactured thereby. By applying a specific reducing agent, the uniformity of the film thickness can be significantly improved, even when the thin film is formed on a highly integrated substrate or a substrate having a complex structure, and the film quality can be effectively improved by reducing impurities and improving the film density and resistivity.

The invention discloses a method for calculating the density of a thin film based on molecular dynamics, which belongs to the technical field of detection and can be used for quickly predicting and screening an optimal process window on a computer at low cost before an actual deposition experiment is carried out. By simulating the deposition process under different parameters in batches and calculating the density, research and development personnel can preferentially perform experimental verification in the most potential parameter range, so that the expensive'preparation-measurement 'cycle index is greatly reduced, and the research and development expenditure and the material cost are remarkably saved. Meanwhile, different from a traditional experimental method which can only provide macroscopic average density, the method is based on atomic coordinates for calculation and has atomic-scale resolution capability, the overall average density of the thin film can be given, and the density distribution gradient of the thin film in the growth direction or the density condition of a specified local area can be further analyzed. Therefore, how different deposition parameters affect the atomic deposition behavior is fundamentally revealed.

A light-emitting element includes a first electrode, a functional layer disposed on the first electrode, a second electrode on the functional layer, and a capping layer on the second electrode. The second electrode includes a first layer on the functional layer, a second layer disposed on the first layer and including a different material from that of the first layer, and a third layer disposed on the second layer and including a different material from that of the second layer. The second layer includes sub-layers each including silver (Ag). The sub-layers include a first sub-layer on the first layer, a second sub-layer on the first sub-layer, and a third sub-layer on the second sub-layer. A film density of the first sub-layer and a film density of the second sub-layer are different, and the film density of the second sub-layer and a film density of the third sub-layer are different.

The purpose of the present invention is to provide a thick and flexible self-supporting film containing 80 mass % or more of a graphene material, an electrode including the self-supporting film, and a power storage device.　This self-supporting film 21 is produced containing 80 mass % or more of a graphene material, and a polytetrafluoroethylene resin, and configured to have a film density of 0.4-1 g / cm3 and a film thickness of 80-1000 µm. The self-supporting film 21 is laminated on one surface or both surfaces of a collector 22 as an electrode film to form electrodes 20a, 20b. The power storage device is constituted using the electrode 20a or the electrode 20b.

The present invention relates to a photomask blank capable of simplifying a process for removing a hard mask film, and further capable of simplifying a mask manufacturing process. The photomask blank is characterized by comprising a substrate, a pattern forming layer on the substrate, and a hard mask film on the pattern forming layer, wherein the hard mask film is formed of a material containing chromium and at least one element selected from the group consisting of nitrogen, carbon, and oxygen, and the film density of the hard mask film is 6.0 g / cm 3 Hereinafter, the hard mask film has resistance to dry etching using a gas containing fluorine and not containing oxygen, and resistance to dry etching using a gas containing chlorine and not containing oxygen, and when the film thickness reduction per minute of the hard mask film when treated with a hydrogen peroxide sulfuric acid mixture is set as v [nm / minute], and the film thickness of the hard mask film is set as d [nm], the following formula (1) is satisfied:

This invention discloses a method for preparing a conductive coating composition, the obtained conductive coating composition, a laminate, and a liquid crystal display, comprising the following steps: subjecting a PEDOT-PSS aqueous dispersion to high-pressure homogenization to obtain a first dispersion; adding an epoxy compound containing hydrophobic functional groups, an alkyl silicate ester, a silane coupling agent containing hydrophobic functional groups, a stabilizer, water, and an alcohol to the first dispersion, and stirring to obtain a second dispersion; cooling the second dispersion to allow for post-aging to obtain the desired conductive coating composition. This method for preparing a conductive coating composition modifies PEDOT-PSS with an epoxy compound containing hydrophobic functional groups, while simultaneously co-condensing the silane coupling agent containing hydrophobic functional groups with the alkyl silicate ester. The resulting conductive coating composition exhibits improved film density after film formation, enhancing the film's hardness and its ability to block oxygen, moisture, and ultraviolet radiation.

A biaxially oriented cavitated PHA-rich composite film comprises a PHA-rich core layer and a first outer skin layer and a second outer skin layer. The core layer comprises a PHA resin at an amount of more than 50 wt % of a total weight of the polymeric resin in the core layer and a modifier X, the modifier X includes PLA resins and PLA copolymers and at least one mineral inorganic cavitating agent; the first outer skin layer comprises a PLA resin at an amount less than 50 wt % of the total weight of the outer layer and biopolymers comprising PHA resins or PBSA resins or PCL resins or mixture thereof. The PHA-rich composite film shows a reduced film density and higher yield as well as low light transmission rate.

A semiconductor device includes a semiconductor substrate, a first layer formed on the semiconductor substrate and including a semiconductor element and a first insulating film, a second layer formed above the first layer and including a channel including an oxide semiconductor and a second insulating film, and a third layer formed above the second layer, and including an electrode formed on the channel and a third insulating film having a film density less than at least one of a film density of the first insulating film or a film density of the second insulating film.

The invention relates to a light-emitting element, an electronic device, and a method for manufacturing the light-emitting element. The light-emitting element includes: a first electrode; a functional layer disposed on the first electrode; a second electrode on the functional layer; and a capping layer on the second electrode. The second electrode includes: a first layer on the functional layer; a second layer disposed on the first layer and including a material different from a material of the first layer; and a third layer disposed on the second layer and including a material different from a material of the second layer. The second layer includes a plurality of sub-layers each including silver (Ag). The plurality of sub-layers includes: a first sub-layer on the first layer; a second sub-layer on the first sub-layer; and a third sub-layer on the second sub-layer. A film density of the first sub-layer and a film density of the second sub-layer are different, and a film density of the second sub-layer and a film density of the third sub-layer are different.

The present invention addresses the problem of providing a resist underlayer film-forming composition for forming a resist underlayer film having high film density, hardness, Young's modulus, and distortion resistance (bending resistance of a pattern), thereby having high etching resistance. [Solution] A composition for forming a resist underlayer film, which contains a novolac resin having a repeating unit structure represented by formula (1) (in formula (1), each of a group A and a group B is an organic group having an aromatic ring, a fused aromatic ring, or a fused aromatic heterocyclic ring; the hydrogen atoms on the ring in the group A and / or the group B are each substituted by two or more monovalent or divalent chemical groups of the same type or different types selected from the group consisting of a chemical group (a) that increases in mass by oxidation, a chemical group (b) that is formed by crosslinking by heating, and a chemical group (c) that induces phase separation during curing. ). The composition further comprises a cross-linking agent, an acid, and / or an acid generator. And a method for producing a resist underlayer film, which is obtained by applying the composition for forming a resist underlayer film on a semiconductor substrate and firing the same.

The invention relates to a method for regulating and controlling crystallization of a perovskite thin film based on polymers with different polymerization degrees. By adding polyvinylpyrrolidone (PVP) into a perovskite precursor solution and adjusting the polymerization degree (K value), the crystallization rate is controlled, so that the crystallization quality and surface uniformity of the film are improved. The specific method comprises the following steps: preparing a precursor solution, adding PVP with different polymerization degrees, spin-coating to form a film, and carrying out heat treatment. Experimental results show that PVP with a proper degree of polymerization (such as K30) can effectively improve the grain size and the film forming compactness of perovskite. The method has the advantages of being simple in process, high in applicability, capable of improving device performance and the like, and is suitable for thin film preparation of high-performance perovskite photovoltaic devices.

The application discloses a kind of photoresist secondary electron generation model construction method and system, it is related to photoetch process technical field.The steps are: determine simulated photoresist formula, and photoresist system model is constructed according to photoresist formula;Simulate the film density of photoresist system model, while output the center of mass coordinates of molecule in film;Determine the number of photons in photoresist film, obtain photon coordinates;According to the distance of photon to center of mass coordinates, determine the molecule type that photon causes molecule ionization, obtain the energy of photoelectron in combination with the ionization energy of molecule;In combination with the energy of photoelectron and photon coordinates, the Monte Carlo simulation of secondary electron generation is carried out to all photon positions in photoresist film, obtain the distribution of secondary electron in photoresist film, and output secondary electron coordinates.The calculation model of the application introduces ionization energy and other parameters, can simulate the distribution of secondary electron in film after exposure of different types, ratio of photoresist by Monte Carlo simulation.