62 results about "Film density" patented technology

The present disclosure belongs to the technical field of the preparation of hybrid passivated back-contact cells, and specifically relates to a short-process preparation method for a hybrid passivated back-contact cell and the use thereof. The short-process preparation method comprises: S1, texturing both surfaces of a silicon wafer; S2, subjecting the front surface of the silicon wafer to phosphorus diffusion, so as to form a third semiconductor diffusion region, wherein the process of phosphorus diffusion comprises the steps of first performing low-temperature diffusion and then performing cooling and discharging, and during the period, heating is not performed to promote diffusion; S3, removing a diffusion layer that detours to and coats the back surface and a phosphorosilicate glass layer on the front surface, which are both obtained in S2; S4, sequentially depositing a first semiconductor layer and a mask layer on the back surface obtained in S3, and subjecting same to high-temperature annealing crystallization at the same time; S5, forming a second semiconductor opening region; and S6, forming an anti-reflection layer on the front surface of the silicon wafer. In the present disclosure, a passivation effect is good, and the film density is better; moreover, defects such as film holes are effectively ameliorated, the cell conversion efficiency and the cell yield are substantially improved, and the technological process is greatly simplified, thereby greatly reducing the equipment investment cost.

A biaxially oriented cavitated PHA-rich composite film comprises a PHA-rich core layer and a first outer skin layer and a second outer skin layer. The core layer comprises a PHA resin at an amount of more than 50 wt % of a total weight of the polymeric resin in the core layer and a modifier X, the modifier X includes PLA resins and PLA copolymers and at least one mineral inorganic cavitating agent; the first outer skin layer comprises a PLA resin at an amount less than 50 wt % of the total weight of the outer layer and biopolymers comprising PHA resins or PBSA resins or PCL resins or mixture thereof. The PHA-rich composite film shows a reduced film density and higher yield as well as low light transmission rate.

The invention discloses a method for judging the stable state of an airflow shearing flat plate liquid membrane, and belongs to the technical field of gas-liquid-solid multiphase flow and aerodynamic heat. According to the non-dimensional relational expression, non-dimensional parameters are directly calculated according to parameters such as airflow density velocity viscosity, liquid film density velocity viscosity and flat plate surface liquid nozzle diameter, the stable state of the liquid film is judged according to the LFI value of the non-dimensional parameters, and the stable state of the liquid film is divided into a stable state, a relatively stable state, a transitional state and an unstable state. And a judgment criterion of the stable state of the liquid film is given. The invention provides a dimensionless relational expression and criterion for judging the stable state of the airflow shearing flat plate liquid film, the stable state of the liquid film under the action of airflow shearing can be quickly estimated, a reference is provided for designing the state of the liquid film in active sweating cooling of a hypersonic aircraft, the stable state of the liquid film is kept as much as possible, and the working efficiency is improved. And the situation of cooling working medium waste caused by airflow shearing instability of the liquid film is avoided.

The invention discloses a solid oxide fuel cell electrolyte thin film and a preparation method thereof, the electrolyte thin film sequentially comprising a transition layer, a self-repairing layer and a compact layer is formed on the surface of one side of a substrate, the transition layer is made into a film through a solid-liquid phase forming process, and first sintering is carried out to obtain the solid oxide fuel cell electrolyte thin film, the self-repairing layer and the compact layer are obtained through the vacuum sputtering coating process at the room temperature, and the compact and thin electrolyte film is obtained at the low preparation temperature, so that the energy consumption cost can be reduced, and commercialized application is facilitated. According to the preparation method, relatively good film-substrate binding force and film compactness can be realized, pores and cracks are not easy to generate under extreme conditions, and the prepared electrolyte film is relatively flat in surface and can realize relatively good interface contact.

A preparation method of a 7B04 aluminum alloy surface in-situ synthesis microparticle enhanced thermal control function film layer can effectively improve the density of the film layer, meanwhile, the film layer is high in infrared emissivity and good in thermal control function, and comprises the steps that firstly, the 7B04 aluminum alloy surface, copper oxide and chromic oxide are pretreated, then a micro-arc oxidation electrolyte is prepared, and the 7B04 aluminum alloy surface is subjected to in-situ synthesis; the pretreated 7B04 aluminum alloy is placed in a stainless steel electrolytic cell of micro-arc oxidation equipment, then the micro-arc oxidation electrolyte is added into the stainless steel electrolytic cell, micro-arc oxidation treatment is conducted on the aluminum alloy through a micro-arc oxidation power source, the electrolyte is continuously stirred in the oxidation treatment process, and the aluminum alloy is subjected to micro-arc oxidation treatment; and finally, obtaining an in-situ synthesized microparticle reinforced thermal control functional film layer on the surface of the 7B04 aluminum alloy, washing the film layer with deionized water, and naturally airing the film layer to obtain the 7B04 aluminum alloy. The composition of the micro-arc oxidation electrolyte is designed, in the growth process of a micro-arc oxidation film layer, copper chromite black particles are synthesized in situ through chemical reaction, the particles and the film layer are metallurgically bonded, and the method has actual application and popularization value.

The present invention relates to a thin film forming method, a semiconductor substrate manufactured by the method, and a semiconductor device, which can greatly improve the thickness uniformity of a thin film even when the thin film is formed on a highly integrated substrate or a substrate having a complicated structure by using a predetermined reducing agent, and can improve the reliability of the thin film. And the method has the effect of effectively improving the film quality by reducing impurities and improving the density and resistivity of the film.

The present disclosure provides, inter alia: a novel high-angle anti-reflection porous film having lower surface glossiness in a high-angle region where the incidence angle and the reflection angle exceed 60°; and a novel high-angle anti-reflection laminate in which said high-angle anti-reflection porous film is provided on a substrate. A high-angle anti-reflection porous film according to the present disclosure has a film density of 50-650 kg / m3 and a BET specific surface area (according to JIS Z 8830:2013) of 0.40-1.20 m2 / g. The 85-degree specular glossiness of one surface of the high-angle anti-reflection porous film is preferably 0.0-0.8%.

A display apparatus includes: a substrate, a light-emitting element disposed on the substrate, and an encapsulation layer covering the light-emitting element and including a first inorganic thin-film encapsulation layer, a second inorganic thin-film encapsulation layer, and a hybrid layer. The second inorganic thin-film encapsulation layer is disposed on the first inorganic thin-film encapsulation layer and has a film density less than a film density of the first inorganic thin-film encapsulation layer, and the hybrid layer is disposed on the second inorganic thin-film encapsulation layer and includes a silicon element and a carbon element and further includes a nitrogen element or an oxygen element.

Provided is a heat-shrinkable polyester film having a high thermal shrinkage in the main shrinkage direction, a high film puncture strength, a high density, and thus an excellent elastic feeling, and a high bag breaking resistance when a bottle falls. A heat-shrinkable polyester film containing 60 mol% or more and 95 mol% or less of terephthalic acid ethylene glycol units in 100 mol% of all ester units, 5 mol% or more and 40 mol% or less of diethylene glycol in 100 mol% of polyol components, and 0 mol% or more and 5 mol% or less of constituent units derived from a monomer component capable of becoming an amorphous component in all polyester resin components, the film having a hot water heat shrinkage rate when immersed in hot water at 90°C for 10 seconds, a film puncture strength, a film density, and a refractive index in the film length direction within a prescribed range.

This application relates to the field of coating technology, specifically disclosing a stain-resistant, high-hardness nano-ceramic paint and its preparation method. The stain-resistant, high-hardness nano-ceramic paint comprises the following components in parts by weight: 90-120 parts of acrylate emulsion, 40-60 parts of nano-inorganic silicone resin, 5-10 parts of film-forming aid, 20-30 parts of titanium dioxide, 10-20 parts of filler, 0.5-2 parts of formaldehyde-removing aid, 2-3 parts of dispersant, 0.5-1.5 parts of defoamer, 1-2 parts of thickener, and 10-20 parts of water. The acrylate emulsion has a solid content of 46-48% and is made from the following raw materials: a mixed monomer composed of methyl methacrylate, n-butyl acrylate, isooctyl acrylate, and methacrylic acid; a functional monomer composed of triethoxysilane succinic anhydride; a crosslinking monomer composed of diacetone acrylamide and dihydrazine adipate; an emulsifier; an initiator; and water. This application improves both the stain resistance and hardness of the ceramic paint by enhancing the film density of the coating system.

To provide a reflective mask blank exhibiting high smoothness and high cleaning resistance.SOLUTION: A reflective photomask blank 10 according to one embodiment of the present disclosure comprises: a substrate 1; a reflective layer 2 that is formed on the substrate 1, has a multilayer structure, and reflects EUV light; and an absorption layer 4 that is formed on the reflective layer 2 and absorbs EUV light. The absorption layer 4 is primarily composed of indium (In), and the absorption layer 4 further contains one or more elements selected from a first group of materials. The absorption layer 4 has a surface roughness of 0.2 nm rms or less, and the absorption layer 4 has a film density of 4.0 g / cm3 or more.SELECTED DRAWING: Figure 1

The invention provides a characterization method of dielectric film density. The characterization method comprises the following steps: preparing a dielectric film layer on a silicon wafer; measuring the refractive index of the dielectric film layer through a refractive index measuring device, and obtaining first refractive index data; soaking the dielectric film layer in a solution for a first preset time; after the dielectric film layer is taken out, surface moisture of the dielectric film layer is removed; measuring the refractive index of the dielectric film layer through refractive index measuring equipment; measuring the refractive index of the soaked dielectric film layer through refractive index measuring equipment, and obtaining second refractive index data; the refractive index difference value of the first refractive index data and the second refractive index data is calculated, the smaller the refractive index difference value is, the higher the density of the dielectric film layer is, and the larger the refractive index difference value is, the lower the density of the dielectric film layer is. The dielectric film structure density characterization is carried out by using the method provided by the invention, so that the thin film with high refractive index and loose film quality can be effectively screened out, and meanwhile, the preparation process of the high-density dielectric film can be better guided.

The invention relates to a dielectric film activator, a semiconductor substrate manufactured using the same, and a semiconductor device. According to the present invention, by using a dielectric film activator capable of reducing the content of a by-product carbon compound between a precursor mixed in a dielectric film and a reaction gas and providing a thin film density increasing effect, the capacitance of the dielectric film is improved, and the thin film density increasing effect is provided through a simple process.

A window and an electronic device including the window are provided. The window includes: a base layer; the functional layer is arranged on the substrate layer; and a cover glass disposed on the functional layer. The functional layer of the window includes: a first coating layer disposed on the base layer, including aluminum oxide (AlOx), and having a film density of about 2.0 g / cm3 or more; and a second coating layer disposed on the first coating layer.

The present application relates to an article having a water / oil repellent surface layer. An article is provided, which is composed of a glass substrate, a base layer of a silicon oxide as a main component formed on the outer surface of the glass substrate, and a water / oil repellent surface layer formed on the outer surface of the silicon oxide base layer, in which the film density of the silicon oxide base layer is 1.8 to 2.2 g / cm 3 , and the water / oil repellent surface layer is a water / oil repellent surface layer excellent in water / oil repellency, abrasion resistance (eraser abrasion durability), and sliding properties, which is composed of a cured product of a fluorine-containing polyether group-containing polymer having a hydrolyzable silyl group of a specific structure and / or a partial hydrolysis condensate thereof as a main component.

Disclosed are a cavitated, heat-shrinkable copolyester film containing an organic polymer additive and a process for producing the film. The film has a unique combination of properties, including one or more of high shrinkage, low density, inherent opaqueness, high toughness, and a non-contaminant in the PET recycle stream due to a final shrunk film density of < 1.00 g / cm3. The film is particularly useful for preparing shrink sleeve labels.

[Problem] To provide a method for manufacturing a cured film having high film density, high film hardness and high etching resistance.[Means for Solution] A method for manufacturing a cured film comprising (1) applying a composition (i) above a substrate; (2) forming a hydrocarbon-containing film from the composition (i); and (3) irradiating the hydrocarbon-containing film with plasma, electron beam and / or ion to form a cured film. Use of the cured film.

A bottom of a trench is an Si plane or a C plane while sidewalls of the trench are an m-plane. In the trench, a gate electrode is provided via a gate insulating film. The gate insulating film is a HTO film with a thickness of at least 50 nm. By a post-HTO-deposition annealing at a temperature in a range of 1250 degrees C. to 1300 degrees C. under a mixed gas atmosphere containing nitric oxide, nitrogen, and oxygen, the film density of the gate insulating film is within a range of 2.21 g / cm3 to 2.38 g / cm3. The total oxygen flow amount of the mixed gas atmosphere of the post-HTO-deposition annealing is at most 5%. The gate insulating film has a two-layer structure including a low-density film that is within 3 nm from a SiC / SiO2 interface and has a relatively low film density, and a high-density film that is at least 3 nm apart from the SiC / SiO2 interface and has a relatively high film density.

The invention provides an alkali metal halide gradient doped perovskite light absorption layer and a full-vacuum preparation method and application thereof, and belongs to the technical field of perovskite materials. The technical concept of gradient doping-step deposition-synergistic passivation is provided, a vacuum evaporation mode is adopted, and the multi-dimensional contradiction between materials and the technology is overcome by combining alkali metal gradient doping and halogen / pseudo-halogen synergistic passivation; an inorganic framework deposition-organic phase vapor infiltration two-step method is adopted in the process level, temperature conflicts are avoided, and the density of the thin film is improved; rb < + > gradient doping is introduced in material design to form a built-in electric field to inhibit Br <-> migration, and meanwhile, a [K-F] < + + > coordination network and Lewis acid-base passivation sites are constructed through K < + > / F- / SCN <-> co-doping, so that the defect density is reduced.

The purpose of the present invention is to provide: a reflective mask for patterning transfer, which uses light having a wavelength in the extreme ultraviolet region as a light source and which is provided with an absorptive film having resistance to hydrogen radicals, and a reflective mask blank used for manufacturing the reflective mask; and a method for manufacturing the reflective mask using the reflective mask blank. A reflective photomask blank (10) according to the present embodiment comprises: a substrate (1); a reflective layer (2) which is formed on the substrate (1) and reflects EUV light; and an absorptive layer (4) which is formed on the reflective layer (2) and absorbs the EUV light. The absorptive layer (4) contains platinum (Pt) in the largest amount among all the elements constituting the absorptive layer (4), and, apart from the platinum (Pt), also contains at least one element selected from a first material group. The film density of the absorptive layer (4) is 9.0 g / cm3 or more.

The invention relates to a display device, an electronic device, and a method for manufacturing the display device. The display device includes: a substrate including an emission area and a non-emission area; a display element layer including an emission layer disposed in the emission area of the substrate; the thin film encapsulation layer is arranged on the display element layer, and the thin film encapsulation layer comprises a first encapsulation layer, a second encapsulation layer and a third encapsulation layer; and a polarizing film disposed on the thin film encapsulation layer. The third encapsulation layer includes: a first layer having a hole; a second layer disposed on the first layer and having a film density higher than that of the first layer; and a third layer disposed on the second layer and having a hole.

A camera element includes a photoelectric conversion section 23 formed by laminating a first electrode 21, a photoelectric conversion layer 23A formed of an organic material, and a second electrode 22. An inorganic oxide semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A, includes a first layer 23C and a second layer 23D from the first electrode side, and satisfies ρ1 ≥ 5.9 g / cm 3 and ρ1 - ρ2 ≥ 0.1 g / cm 3 when an average film density of the first layer 23C within 3 nm from an interface between the first electrode 21 and the inorganic oxide semiconductor material layer 23B is set as ρ1 and an average film density of the second layer 23D is set as ρ2.

A substrate processing method for forming a carbon-containing film that is inhibited from film peeling due to thermal treatment is provided. The substrate processing method includes: preparing a substrate having a foundation film; forming a carbon-containing film having a film density of 2 g / cm3 or greater on the foundation film by forming a plasma of a processing gas containing a carbon-containing gas; and subjecting the substrate on which the carbon-containing film is formed to thermal treatment. In the forming of the carbon-containing film, for a first time from a start of the forming of the carbon-containing film, an ion energy higher than the ion energy during a second time from an end of first time is supplied to the substrate.

The utility model relates to circuit chip surface film pressing equipment, in particular to circuit chip surface film pressing equipment capable of improving pressed film density, which comprises a top seat, a hydraulic rod fixedly mounted on the lower surface of the top seat, an electric heating plate fixedly mounted at the other end of the hydraulic rod, and a workbench, linear rails fixedly mounted at two ends of the upper surface of the workbench, two sliding blocks are fixedly installed on the linear rail, a grabbing mechanism is fixedly installed at the upper ends of the sliding blocks, a fixing plate is fixedly installed on the lower surface of one end of the workbench, a fan is fixedly installed on the upper surface of the fixing plate, and a cooling table is fixedly installed on the upper surface of one end of the workbench. The circuit chip subjected to film pressing is grabbed to the upper surface of the cooling table through the grabbing mechanism, and the fan runs, so that the flowability of air around the circuit chip is accelerated, the circuit chip subjected to film pressing is rapidly cooled, a film material is cooled and cured, a firm compact coating is formed on the surface of the circuit chip, and the film pressing density of the circuit chip is improved.

The invention relates to a display device and a manufacturing method of the display device. The display device includes: a light emitting element layer disposed on a substrate; and an encapsulation layer including a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer sequentially stacked on the light emitting element layer. At least one of the first inorganic encapsulation layer and the second inorganic encapsulation layer includes a first inorganic layer and a second inorganic layer disposed on the first inorganic layer, the second inorganic layer including a first surface facing the first inorganic layer and a second surface opposite the first surface, a first film density in a region adjacent to the first surface of the second inorganic layer is greater than a second film density in a region adjacent to the second surface of the second inorganic layer, and the film density of the first inorganic layer is greater than the second film density of the second inorganic layer.

The present disclosure provides a novel high-angle anti-reflective porous film having less surface gloss in a high-angle region of an incident angle and a reflection angle exceeding 60°, and a novel high-angle anti-reflective laminate provided with the high-angle anti-reflective porous film on a substrate, and the like. The high-angle anti-reflective porous film of the present disclosure has a film density of 50 to 650 kg / m 3 , and has a BET specific surface area of 0.40 to 1.20 m 2 / g (according to JIS Z8830 (2013)). The 85-degree specular glossiness of one surface of the above high-angle anti-reflective porous film is preferably 0.0% or more and 0.8% or less.

The present invention relates to a dielectric film activator, and a semiconductor substrate and semiconductor device fabricated using the same. According to the present invention, by using a dielectric film activator capable of increasing thin film density while reducing the content of by-product carbon compound between a precursor and reaction gas injected into a dielectric film, the capacitance of a dielectric film may be improved, and thin film density may be increased by a simple process.

Provided is a method for producing a cured film having high film density, high film hardness, and high etching resistance. A method of making a cured film comprising (1) applying a composition (i) over a substrate; (2) forming a hydrocarbon-containing film from composition (i); and (3) irradiating the hydrocarbon-containing film with plasma, electron beams and / or ions to form a cured film. Use of the cured film.

This application relates to the field of quantum dot light-emitting diodes (QLEDs), disclosing a highly dense quantum dot film, its fabrication method, and QLED light-emitting devices and display devices. This application introduces rigid steric materials such as fullerenes, which are smaller in volume than quantum dots and have a diameter of 0.2-2 nm, into the quantum dots to fill the gaps between them. Compared to conventional quantum dot films, the spin-coated quantum dot film produced by this method exhibits significantly improved morphology and better film density.

The invention relates to a display device and a manufacturing method thereof. A display device includes: a substrate; a light emitting element disposed on the substrate; and an encapsulation layer covering the light emitting element and including a first inorganic thin film encapsulation layer, a second inorganic thin film encapsulation layer, and a hybrid layer. The second inorganic thin film encapsulation layer is disposed on the first inorganic thin film encapsulation layer and has a film density less than a film density of the first inorganic thin film encapsulation layer, and the mixed layer is disposed on the second inorganic thin film encapsulation layer and includes a silicon element and a carbon element and further includes a nitrogen element and / or an oxygen element.