225results about "Diamond" patented technology

The present disclosure discloses a high-temperature and high-pressure preparation method for hexagonal diamond, which belongs to the field of superhard material synthesis technology. The method comprises making high-purity graphite into a precursor, assembling the synthesis block, and then subjecting it to heating, pressurizing, temperature holding, and pressure holding processes to obtain hexagonal diamond. The preparation method for hexagonal diamond according to the present disclosure allows high-purity graphite to achieve higher pressure along the c-axis direction, further promoting the phase transition of graphite. In addition, the temperature field where the precursor is located has a certain temperature gradient, which facilitates the transformation of high-purity graphite into hexagonal diamond and achieves a better conversion rate of hexagonal diamond.

The invention discloses a metalized diamond particle, a diamond / gallium-based liquid metal composite material and a preparation method thereof, and belongs to the field of composite thermal interface materials. The metallized diamond particle comprises a diamond particle, the surface of the diamond particle is coated with an immiscible alloy layer, the immiscible alloy layer contains a diffusion barrier component and a reaction wetting component, and the content of the diffusion barrier component in the immiscible alloy layer is not higher than 15 at% of the total content of the diffusion barrier component and the reaction wetting component; wherein the diffusion barrier component is one or more of tungsten, molybdenum and tantalum, and the reaction wetting component is one or more of silver and copper. The metallized diamond particles and the gallium-based liquid metal are combined to form the composite material, so that the diamond / gallium-based liquid metal composite material has more excellent thermal conductivity.

The present application relates to a modified diamond micro-powder and a preparation method and application thereof. The preparation method of the modified diamond micro-powder comprises the following steps: performing hydroxylation treatment on diamond micro-powder to obtain surface hydroxylated diamond micro-powder; performing pretreatment on the surface hydroxylated diamond micro-powder in a mixed solution of a silane coupling agent and an organic solvent under ultrasonic conditions with a frequency of 25KHz-40KHz and an intensity of 1W / cm 2 -3W / cm 2 to obtain pretreated diamond micro-powder; and performing vacuum heat treatment on the pretreated diamond micro-powder to obtain modified diamond micro-powder. The preparation method greatly improves the bonding force between the modified layer and the diamond and improves the micro-powder agglomeration, so that the pretreatment link before chemical plating has the feasibility of batch processing, which not only doubles the production efficiency, but also reduces the production cost to one third of the traditional method.

The present invention relates to diamond abrasive grains and a manufacturing method thereof, and provides tetradecahedral diamond abrasive grains with uniform size and shape. The manufacturing method of diamond abrasive grains according to the present invention allows for shape control and minimizes impurities and crystal defects, thereby manufacturing diamond abrasive grains for ultra-precision grinding in chemical mechanical planarization (CMP) processes.

The invention discloses easy-to-disperse diamond grinding fluid and a preparation method thereof, and relates to the technical field of grinding fluid. The easy-to-disperse diamond grinding fluid is prepared from the following raw materials in parts by weight: 1 to 20 parts of modified diamond micro powder, 40 to 80 parts of deionized water, 1 to 10 parts of polyethylene glycol 6000, 0.5 to 1.2 parts of sodium carboxymethyl cellulose, 1 to 20 parts of glycerol, 1 to 10 parts of triethanolamine, 0.3 to 0.7 part of sodium polyacrylate, 0.05 to 5 parts of 1, 2-benzisothiazolin-3-ketone and 1 to 10 parts of a modified silane coupling agent. According to the easy-to-disperse diamond grinding fluid, through the synergistic effect of the modified diamond micro powder and the modified silane coupling agent, the dispersity is excellent, and the stability is high; the formula is scientific, polyethylene glycol and other assistants are matched, precise process parameters and graded filtration are combined, the grinding efficiency is high, the surface smoothness of a workpiece is good, the antibacterial property and storage stability are good, and the application scene is wide.

Low temperature synthesis, growth and doping methods and resulting materials are disclosed. According to an aspect, a method for material transformation includes providing a target material comprising carbon and / or hydrocarbon. The method also includes placing the target material within a fluid comprising a hydrogen source. Further, the method includes applying energy to the target material such that at least some of the target material is transformed to the same material with new beneficial bonding configuration.

The invention discloses a copper-diamond composite board with high heat conductivity and low expansion coefficient and a preparation method thereof, and belongs to the technical field of preparation of heat-conducting packaging materials for electronic equipment. The preparation method comprises the following steps: grinding and cleaning a base copper plate, milling a rectangular groove to obtain a pretreated base copper plate, and performing electrochemical etching on the pretreated base copper plate to obtain an etched base copper plate; filling a rectangular groove in the etched base copper plate with the carbon nano tube and modified diamond, and compacting for 1-2 minutes under 20-30 MPa to obtain a mixed base copper plate; and the copper covering plate covers one side of the mixed base copper plate filled with the carbon nano tube modified diamond, and then the mixed base copper plate is placed in a graphite mold to be subjected to direct current hot pressing sintering to obtain the copper-diamond composite plate. The prepared copper-diamond composite board has good heat conduction performance and low thermal expansion performance, the bending strength is high, and the problem that the brittleness of the material is too high is effectively solved.

This invention provides a highly efficient method for separating or concentrating lattice defect-containing nanoparticles (NDs). [Solution] A method for separating or concentrating lattice defect-containing ND particles, comprising irradiating a dispersion containing at least two types of ND particles selected from nanodiamond (ND) particles having at least one type of lattice defect and ND particles without the lattice defect with at least one type of excitation laser light having an energy greater than or equal to the resonance absorption energy of the lattice defect and at least one type of stimulated emission laser light, thereby selectively moving the ND particles having the lattice defect by the absorption optical pressure generated by the absorption of at least one type of excitation laser light and the stimulated recoil force generated by the action of at least one type of stimulated emission laser light, wherein the excitation laser light transitions electrons in the ground state of the ND particles to an excited state, and the stimulated emission laser light transitions electrons in the excited state to the ground state faster than spontaneous emission to generate stimulated recoil force.

The invention discloses an artificial diamond cleaning and purifying device, and relates to the technical field of artificial diamond cleaning and purifying, the artificial diamond cleaning and purifying device comprises a machine box, two U-shaped frames and concave strip plates are arranged on the left side and the right side of the machine box, the concave strip plates are respectively fixed on the top surfaces of the two U-shaped frames, the two transverse plates are respectively fixed on the two sides of the inner walls of the two concave strip plates, and the two U-shaped frames and the concave strip plates are arranged on the left side and the right side of the machine box. The threaded rod penetrates through and is rotatably installed in the middle of the sides, close to each other, of the two transverse plates, the inner threaded block is slidably installed on the outer wall of the threaded rod, the inner wall of the inner threaded block is meshed with the inner wall of a threaded groove of the threaded rod, and the outer wall of the inner threaded block is in sliding contact with the inner walls of the two concave strip plates; according to the artificial diamond cleaning device, the two sides of the inner screw block are limited through the rubber mats, and therefore the problem that the artificial diamond cleaning effect is poor due to the fact that the filter cartridge shifts during displacement is solved.

Provided is a single-crystal diamond wherein: the half width of an X-ray diffraction rocking curve is 20 seconds or less, the half width of the X-ray diffraction rocking curve being measured using CuKα rays in X-ray diffraction by means of a double-crystal method in which a diamond crystal is used as a first crystal, with a (0004) plane parallel arrangement; the half width of a peak at the Raman shift of 1332 cm-1 to 1333 cm-1 in the Raman spectrum is 2.0 cm-1 or less; the etch pit density is 10000 / cm2 or less, the etch pit density being measured by means of an etching test; and the nitrogen content in terms of the number of atoms is more than 0.1 ppm and at most 50 ppm.

The present invention relates to highly pure high performance polycrystalline diamond monolith, a method for manufacturing a single-crystal diamond, and uses thereof.

In certain examples, a poly crystalline (PC) diamond layer is processed to enhance the layer's TC (thermal conductivity) by a localized anneal confined to a subset region of the layer's processing surface. The temperature(s) of the localized anneal is sufficiently high to have damaged the processing surface if all of the processing surface were subjected to an anneal at such temperature(s). The localized anneal truncates grains extending into or beyond the processing surface to set or correspond with a low roughness attribute (e.g., not more than 1 nm). In another example, the localized anneal is preceded by performing a global anneal. The localized anneal results in unique physical attributes of the PC diamond layer including, e.g., the processing surface not being anneal-damaged, truncated diamond grains sufficient to set or correspond with an RMS roughness measure, and the TC being set as a function of grain sizes in the PC diamond layer and its thickness.

Provided is a nanodiamond aqueous dispersion in which nanodiamond particles can be present in water in a highly dispersed state. The nanodiamond aqueous dispersion includes water and nanodiamond particles dispersed in the water. A content of heavy metal is 1 part by mass or less with respect to 100 parts by mass of the nanodiamond particles. A horizontal projection area of the nanodiamond particles calculated from an analysis image obtained by low-temperature electron microscopy satisfies at least one condition selected from the group consisting of (a) to (d): (a) a percentage of 100 nm2 or more is 20% or less, (b) a percentage of 80 nm2 or more is 24% or less, (c) a percentage of 50 nm2 or more is 30% or less, (d) a percentage of 30 nm2 or more is 39% or less.

An exhaust valve includes a valve head and a valve stem extending from the valve head. The valve head includes a combustion face and a seat face. The combustion face and the seat face are on opposing sides of the valve head. The seat face is configured to matingly engage an opposing surface. The valve head is formed of a base material. A valve thermal management composition coats at least a portion of the seat face and comprises increased thermal conductivity relative to the base material of the valve head.

The invention belongs to the technical field of artificial diamond processing, and relates to a raw material pretreatment device and method applied to an artificial diamond synthesis process, and the method comprises the following steps: selecting graphite powder with the purity not lower than 99.9% as a carbon source main material, screening through a 100-mesh standard sieve, removing coarse particles with the particle size larger than 150 microns and impurities, and collecting screen underflow for later use; meanwhile, metal catalyst powder with the particle size of 5-10 microns is selected, the screened graphite powder is placed in plasma treatment equipment, inert gas is input to drive the graphite boat body to rotate in the furnace, it is ensured that all the surfaces of the biscuit can make continuous and uniform contact with the high-temperature inert gas, and therefore the sintering temperature of the biscuit is increased; the problem of uneven heating caused by the near-heat and far-cold effect in the static oven is fundamentally solved; and the biscuit is uniformly dehydrated and purified in all-dimensional hot air flow, so that insufficient pretreatment caused by local overheating or insufficient temperature is effectively avoided, and the quality stability of a final artificial diamond product is greatly improved.

This method for producing a diamond thin film involves synthesizing a diamond thin film on a base material through a plasma CVD method, wherein a raw material gas containing C, H, and O is supplied to a vacuum vessel in which the base material is disposed, high-frequency current is applied to an antenna that is disposed inside or outside the vacuum vessel and that has a conductor element and a capacitive element which are electrically connected to each other in series to generate inductively coupled plasma inside the vacuum vessel, and the generated inductively coupled plasma is used for the plasma CVD method. When the diamond thin film is being synthesized, the plasma has the following characteristics: the electron temperature is 1.0 eV or more and 2.0 eV or less; the electron density is 1.0 × 1011cm-3 or more and 1.0 × 1012cm-3 or less; and the ion saturation current is 1.0 × 10-4 A or more and 1.0 × 10-2 A or less.

The present application belongs to the technical field of material science, and particularly relates to a molybdenum table for growing convex diamonds and a growing method. On one hand, the molybdenum table for growing convex diamonds comprises a bowl-shaped shell, at least four layers of annular rings, and a groove arranged at the bottom of the inner side of the bowl-shaped shell. On the other hand, the growing method for growing convex diamonds comprises the following steps: placing a substrate material into the groove of the molybdenum table; placing the molybdenum table with the substrate material into a microwave plasma chemical vapor deposition device; and processing the substrate material by using the microwave plasma chemical vapor deposition device to obtain a curved diamond. Compared with directly reducing the power to reduce the plasma area, the slant convex molybdenum ring group is used to control the size of the actual plasma area, so that the low-speed growth of the edge can be ensured, while directly reducing the power may lead to the edge position being unable to be covered by the plasma and thus unable to be effectively grown.

The invention relates to the field of diamond materials, in particular to a preparation method of a diamond material and a semiconductor device.The preparation method specifically comprises the steps that a polyion liquid layer containing nanometer nickel powder is formed on the surface of a diamond film; then carrying out pyrolysis at the temperature of 400 to 500 DEG C, and then growing graphene at the temperature of 800 to 1000 DEG C; according to the method, the dependence on expensive coating equipment is broken through, the preparation cost is greatly reduced while the performance of the diamond material is guaranteed, and more economical preparation options are provided for industrialization of field emission devices, thermal management devices and high-frequency electronic devices.

Provided is a nanodiamond dispersion composition having excellent dispersibility of nanodiamond particles in an organic dispersion medium. A nanodiamond dispersion composition including an organic dispersion medium, nanodiamond particles dispersed in the organic dispersion medium, and a fatty acid ester dispersing agent, the nanodiamond particles being surface-modified by a surface-modifying group or compound containing an organic group. The fatty acid ester dispersing agent preferably has a mass loss rate of 30% or less when held in an air atmosphere at a temperature of 200°C for 180 minutes.

The invention provides a graphite core column for high-temperature and high-pressure synthesis of high-thermal-conductivity diamond and a preparation method, the graphite core column is of a three-layer concentric cylinder structure, and the graphite core column is sequentially composed of a nitrogen removal core layer, a catalytic reaction layer and a sealing pipe layer from inside to outside. The nitrogen removal core layer forms an active defense system, Ti / Zr elements located in the core react with nitrogen to produce stable nitrides, nitrogen impurities are firmly captured and fixed to the nitrogen removal core layer, and the diamond growth environment of the catalytic reaction layer is purified; and the catalytic reaction layer is formed by mixing a Ni-Mn-Cu ternary catalyst and graphite. The catalyst system ensures that the dynamic processes of dissolution and precipitation of the carbon source in the catalyst are consistent, and stable growth of diamond single crystals is facilitated; the outer-layer sealing pipe graphite is used for sealing an internal reaction system and preventing external pollution. The three layers of structures perform their own functions and cooperate with one another, impurity removal, growth and pressure maintaining are integrally designed, and the system solves the three core problems of nitrogen pollution, uneven growth and pressure fluctuation in synthesis of the high-thermal-conductivity diamond.

The present invention relates to a diamond device or structure comprising at least one support layer or material including at least one or more support structures within the at least one support layer or material, a plurality of recesses defined by the at least one or more support structures, and at least one diamond microseed and a plurality of diamond nanoseeds disposed in each recess or in the plurality of recesses.

A kind of vacuum furnace reduction process with tray out loading, the process makes several square graphite plates, evenly and densely sets several air holes on the graphite plate, and makes several high-temperature-resistant stainless steel trays;At least two layers of graphite columns are stacked in the stainless steel tray, the graphite plate is horizontally laid on the transfer trolley, then the stainless steel tray loaded with graphite column is stacked layer by layer on the surface of the graphite plate, and the transfer trolley is driven to send the stacked graphite column into the oven for low-temperature baking;After low-temperature baking, the graphite column is taken out as a whole by the transfer trolley and transferred to the vacuum furnace for vacuum baking;The process does not need to place the graphite plate layer by layer, removes the multi-layer graphite plate structure, greatly increases the effective utilization space of the vacuum furnace and the oven, and the number of graphite columns loaded per furnace can be increased by more than 30%, when discharging, it does not need to be loaded into the tray manually, but directly put the tray loaded with graphite column into the turnover box, reduces the rate of rotten block, effectively improves the baking efficiency and yield.

The invention relates to a diamond cleaning method. The diamond cleaning method comprises the following steps: (1) containing materials; (2) suspending graphite; (3) taking down the barrel-shaped container and magnetically sucking out the metal teasing needle; (4) discharging the graphite; the cleaning method is simple in process, has a good cleaning effect on residual stubborn graphite in a crack of a continuous polycrystalline crystal or a defect and recess of a crystal face, reduces the labor intensity of workers, and also improves the cleaning effect of diamond particles.

The invention provides a device and a method for directly preparing diamond from coal based on assistance of a plasma-laser composite field, and belongs to the technical field of high-value utilization of coal and preparation of diamond materials. The problems of discontinuous carbon source supply, low etching efficiency and the like in an existing coal-made diamond method are solved. Wherein the stepping motor drives the annular rotating metal groove to rotate; the microwave plasma generator is used for forming a microwave plasma area in the chemical vapor deposition reaction cavity; the pulse laser transmitter is used for transmitting a laser beam to irradiate the solid pulverized coal; the laser beam intersects with a plasma main energy region to form a local high-energy superposition region; the non-contact infrared thermometer is used for monitoring the temperature of the growth substrate and the annular rotating metal groove; and the feedback control system is used for dynamically adjusting the power of the laser emitted by the pulse laser emitter and the rotating speed of the annular rotating metal groove according to the signal fluctuation range of the optical emission spectrum. The activation efficiency of the pulverized coal carbon source can be improved, and continuous hydrocarbon group supply is achieved.

A single crystal diamond material comprising a single crystal diamond and an altered portion present on the outer periphery of the single crystal diamond, wherein the nitrogen atom content in the single crystal diamond is 1 ppm or more and 2000 ppm or less based on the atomic number, and the single crystal diamond material has a core electron excitation spectrum of the altered portion obtained by electron energy loss spectroscopy using a transmission electron microscope, in which an energy loss of π exists in a range of 285 eV±5 eV. * Maximum intensity of the peak Iπ * and the energy loss is in the range of 291±5 eV. * Maximum intensity of the peak Iσ * Ratio to Iπ * / Iσ * is 0.15 or more, and in the altered portion, the percentage {N1 / (N1+N2)}×100 of the number N1 of primary carbon atoms to the sum N1+N2 of the number N1 of primary carbon atoms constituting amorphous carbon and the number N2 of secondary carbon atoms constituting graphite is 90% or more.

The invention relates to a method for purifying primary monocrystal diamond powder, which comprises the following steps of: (1) pretreatment stage: pretreating diamond particles subjected to coarse separation, and carrying out ultrasonic treatment and cleaning by adopting a mixed acid of a hydrochloric acid solution with the mass percent concentration of 30% and a nitric acid solution with the mass percent concentration of 50%; (2) treating for 60-90 minutes at the temperature of 80-120 DEG C by adopting a microwave-assisted ionic liquid method, then carrying out solid-liquid separation, and recovering ionic liquid; (3) carrying out ultrasonic wave-hydrogen peroxide composite oxidation treatment on the treated diamond; and (4) carrying out ultrapure water ultrasonic cleaning on the diamond subjected to composite oxidation treatment, and then carrying out vacuum drying. Physical field, green chemistry and mild oxidation technologies are organically combined, the highest temperature of the whole process does not exceed 120 DEG C, etching, oxidation and lattice damage caused by high temperature and strong acid to the diamond surface are avoided from the source, the integrity and high strength of primary single crystals can be kept, and the method is suitable for large-scale production. And a novel efficient, high-quality and environment-friendly diamond purification path is formed.

The invention discloses a method for simultaneously preparing graphene and two-dimensional diamond, which comprises the following steps: adding single-crystal crystalline flake graphite powder and a high polymer into a ball-milling tank, ball-milling and uniformly mixing, tabletting the obtained mixed powder, and pressing in a cubic press to obtain the graphene and the two-dimensional diamond, according to the method, the stable graphene and the two-dimensional diamond which are large in size are obtained, the prepared graphene and the prepared two-dimensional diamond do not contain impurities and are high in purity, and the method has important significance on development of research on physical and chemical properties of the graphene and the two-dimensional diamond and implementation of application of the graphene and the two-dimensional diamond.

SOLUTION: There are provided a double-tube connection structure for detonation synthesis, a detonation synthesis device, and an application thereof. The double-tube connection structure for detonation synthesis includes: a drive tube 4; a sample tube 2; a fixed assembly; and an end plug 7 provided at a port of the sample tube. The drive tube is sleeved outside the sample tube, and cavities 3 are provided between the drive tube and the sample tube and between the drive tube and the end plug. The fixed assembly is provided on both ends of both of the drive tube and the sample tube. After detonation, a detonation wave is transferred from top to bottom. Under the action of the detonation wave, the drive tube performs concentric sliding motion toward the sample tube, and covers outside a top end plug of the sample tube, the sample tube, and a bottom end plug of the sample tube. The detonation synthesis device comprises the double-tube connection structure for detonation synthesis.EFFECT: With a device, a graphite sample can be effectively converted into a high-purity polycrystalline diamond. The high-purity polycrystalline diamond obtained by conversion can be completely recovered.SELECTED DRAWING: Figure 2

Provided are a substrate for epitaxially growing a diamond crystal, having at least a surface made of a metal, in which the above surface made of the metal is a plane having an off angle φ of more than 0°, and the full width at half maximum of the X-ray diffraction peak from the (002) plane by the X-ray rocking curve measurement at the above surface made of the metal is 300 seconds or less; and a method of manufacturing a diamond crystal, including epitaxially growing a diamond crystal on the above surface made of the metal of the above substrate.