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267results about How to "Reduce surface damage" patented technology

Preparation of nano-cerium oxide composite abrasive grain polishing solution

The invention discloses a method for preparing nano cerium oxide composite abrasive particle polishing solution. The method is characterized by taking inorganic abrasive particles as the inner core and a cerium oxide coating as the shell to form the nano cerium oxide composite abrasive particle polishing solution with a core/shell structure, and belongs to the high-precision polishing material preparation technique technical field. The preparation process of the polishing solution is as follows: firstly, the nano cerium oxide composite abrasive particles are prepared by the homogeneous precipitation method; secondly, the polishing solution is prepared through the cerium oxide composite abrasive particles. During the preparation process of the polishing solution, the weight percent of the cerium oxide composite abrasive particles and water is between 2 and 10 percent, and 0.5 to 2 percent of dispersant is added; after further ultrasonic dispersion or ball milling dispersion of mixture, uniform dispersion liquid is formed; and the nano cerium oxide composite abrasive particle polishing solution is obtained after addition of 0.5 to 5 percent of oxidant, 0.05 to 0.1 percent of corrosion inhibitor and 0.05 to 0.1 percent of lubricant (the addition of various materials takes 100 percent of water as the reference basis). The polishing solution is represented by low surface roughness and scratch level, and then an ultra-smooth surface is obtained.
Owner:SHANGHAI UNIV

Additive for improving utilization ratio of silicon crystal line cutting mortar as well as preparation method and application method of addictive

The invention discloses an additive for improving utilization ratio of silicon crystal line cutting mortar as well as a preparation method and application method of the addictive. The additive is composed of the following raw materials in percentage by weight: 50-96.5% of polyethylene glycol, 1-10% of penetrating agent, 1-20% of ether alcohol surfactant, 0.5-10% of extreme pressure resistant chelator and 1-10% of assistant detergent. The preparation method comprises the steps of weighing and mixing the raw materials. The application process comprises the following steps: 1. carrying out the first line cutting the mortar and recovering the mortar; 2. adding the additive: adding the additive to the recovered mortar after the first linear cutting based on the weight ratio of 1:100 plus / minus 10, and then evenly stirring; 3. carrying out the second line cutting; and 4. carrying out the third line cutting and recovering the mortar. The addictive is reasonable in design and has good use effect and practicable value, addictive preparation and use processes are simple, operation is convenient, and the defects of the existing silicon wafer cutting fluid such as more severe pollution, higher rejection rate, high production cost, low utilization ratio and the like can be overcome.
Owner:XIAN HUAJING ELECTRONICS TECH

Method for processing soft and crisp LBO crystals based on consolidated abrasive polishing pad

The invention discloses a method for processing soft and crisp LBO crystals based on a consolidated abrasive polishing pad, which is characterized by comprising the following steps: firstly, roughly polishing and machining LBO crystals by the polishing pad of diamond consolidated abrasive of which the granularity is less than or equal to 14 micrometers, wherein in the polishing and machining process, the polishing pressure is controlled to 50-600g/cm<2>, the revolving speed of a polisher is controlled to 10-200 rpm, the pH value of a polishing solution adopted by polishing is controlled to 2-6, and the temperature of the polishing solution is 20-30DEG C to roughly polish the LBO crystals; and then, finely polishing and machining the LBO crystals obtained from the rough machining by the polishing pad of cerium oxide consolidated abrasive of which the granularity is not more than 3 micrometers, wherein the polishing pressure is controlled to 50-600g/cm<2> in the fine polishing and machining process, the revolving speed for polishing is controlled to 10-200rpm, the pH value of a polishing solution adopted by polishing is controlled to 2-6, and the temperature of the polishing solution is 20-30DEG C until the surface quality satisfies a set requirement. The method has the advantages of high processing efficiency and high finished product rate and does not cause environmental pollution.
Owner:NANJING UNIV OF AERONAUTICS & ASTRONAUTICS

Processing method for ultrathin plain glass based on consolidated abrasive

The invention discloses a processing method for ultrathin plain glass based on consolidated abrasive, which is characterized by comprising the following steps: firstly, taking ground plain glass of which the thickness is less than or equal to 0.5mm as a raw material; secondly, adopting a polishing pad of diamond consolidated abrasive of which the granularity is less than or equal to 28 micrometers, controlling the polishing temperature to 20-40oC, polishing pressure of 100-1000g/cm<2>, pH value of a polishing solution of 8-11, flow velocity of 100-500ml/min and polishing rotation speed of 10-500r/min to obtain a middle glass product of which the thickness is 0.2-0.3mm; thirdly, polishing the polishing pad of diamond consolidated abrasive of which the granularity is less than or equal to 10 micrometers, controlling the polishing temperature to 20-40oC, polishing pressure of 100-500g/cm<2>, pH value of a polishing solution of 8-11, flow velocity of 100-500ml/min and polishing rotation speed of 10-300r/min; and putting the middle glass product onto a polisher to polish to obtain ultrathin glass of which the thickness is less than or equal to 0.15mm. The processing method has the advantages of simple process, no pollution, high efficiency and low cost, and size material with a larger length or width and thickness ratio can be processed.
Owner:NANJING UNIV OF AERONAUTICS & ASTRONAUTICS

Non-parallel plate type capacitive coupled plasma chemical vapor deposition method

The invention relates to a film deposition method, and particularly relates to a non-parallel plate type capacitive coupled plasma chemical vapor deposition method. The method adopts the following components: a planar rectangular spiral inductive antenna, a low-frequency power generator, an impedance matching network, a columnar vacuum chamber, quartz glass and a lining bracket. By controlling radio frequency input power and tuning matched capacitance, the method disclosed by the invention can be used for realizing stable capacitive coupled discharging in the vacuum chamber; the plasma is relatively low in density; a radial electrostatic field which is parallel to the surface of a lining and built by potential difference of the two ends of a coil plays a leading role, so that the motion of positive ions is limited in a direction parallel to the surface of the lining. Therefore, the method disclosed by the invention commences in two aspects, namely reduction of the plasma density and limitation on motion direction of the positive ions, so that bombardment caused by the positive ions to the film surface during a chemical vapor deposition can be remarkably inhibited, and surface damages are reduced. The system can be used for preparing various necessary passivation layers such as non-crystalline silicon and non-crystalline silicon nitride for a high-efficiency crystalline silicon solar cell.
Owner:JIANGNAN UNIV

Additive for improving utilization ratio of silicon crystal line cutting mortar as well as preparation method and application method of addictive

The invention discloses an additive for improving utilization ratio of silicon crystal line cutting mortar as well as a preparation method and application method of the addictive. The additive is composed of the following raw materials in percentage by weight: 50-96.5% of polyethylene glycol, 1-10% of penetrating agent, 1-20% of ether alcohol surfactant, 0.5-10% of extreme pressure resistant chelator and 1-10% of assistant detergent. The preparation method comprises the steps of weighing and mixing the raw materials. The application process comprises the following steps: 1. carrying out the first line cutting the mortar and recovering the mortar; 2. adding the additive: adding the additive to the recovered mortar after the first linear cutting based on the weight ratio of 1:100 plus / minus10, and then evenly stirring; 3. carrying out the second line cutting; and 4. carrying out the third line cutting and recovering the mortar. The addictive is reasonable in design and has good use effect and practicable value, addictive preparation and use processes are simple, operation is convenient, and the defects of the existing silicon wafer cutting fluid such as more severe pollution, higher rejection rate, high production cost, low utilization ratio and the like can be overcome.
Owner:XIAN HUAJING ELECTRONICS TECH

Mechanical-type chip clamping-pressing device for vacuum plasma technology

The invention discloses a mechanical-type chip clamping-pressing device for vacuum plasma technology. The mechanical-type chip clamping-pressing device for the vacuum plasma technology comprises a chip substrate, an electrode, ceramic pressure rings, pressure ring connecting rods, a connecting rod support, a permanent magnet group, a drive motor and a motor support, wherein the chip substrate is positioned on the electrode, the ceramic pressure rings are arranged above the chip substrate and are connected with the connecting rod support through the pressure ring connecting rods, the permanent magnet group comprises a first group of permanent magnets and a second group of permanent magnets, wherein the first group of permanent magnets and the second group of permanent magnets are arranged in a corresponding mode are in magnetic coupling with each other, the first group of permanent magnets is fixedly connected with the connecting rod support, and the second group of permanent magnets is fixed on the drive motor which is movably connected with the motor support. The mechanical-type chip clamping-pressing device for the vacuum plasma technology can overcome the technical defect that an mechanical-type chip clamping-pressing device in the prior art can not be compatible with chip substrates with different thicknesses and surface evenness, is reliable in using, can reduce and eliminate instantaneous impact force generated by the ceramic pressure rings to the chip substrate when the ceramic pressure rings are contacted with the surface of the chip substrate, reduces the probability that the surface of the chip substrate is damaged or cracked, and improves production efficiency.
Owner:赖守亮

Production method for mixed grinding material

The invention relates to a novel production method for a mixed grinding material. The method comprises the following steps: mixing zirconium silicate and alumina; carrying out ball milling on the mixture so as to obtain mixed micro-powder; putting the mixed micro-powder, water and a dispersant into a sorting barrel and standing the mixture for settlement after stirring; carrying out sorting, wherein two sub-steps are included, namely, a) sucking out a slurry on the upper layer of the sorting barrel with a siphon, adding clear water to the sorting barrel until the mixture reaches the initial liquid level before siphoning, and carrying out stirring, settling and siphoning so as to obtain particles of a grade, and b) adding the dispersant and clear water into the sorting barrel until the mixture reaches the initial liquid level before siphoning and repeating the steps of stirring, settling and siphoning so as to obtain particles of another grade; drying the obtained particles with different grades so as to obtain a finished product. The mixed grinding material produced in the invention enables damage of micro-powder to the surface of a ground material in grinding to be substantially reduced and plays a very critical role in improving the quality of surface polishing of an object and in reducing polishing cost.
Owner:无锡成旸科技股份有限公司
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