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Non-parallel plate type capacitive coupled plasma chemical vapor deposition method

A technology of capacitive coupling and thin film deposition, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve problems such as substrate damage and film defects, improve quality, reduce surface damage, and avoid cross-contamination Effect

Active Publication Date: 2015-06-10
JIANGNAN UNIV
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Problems solved by technology

[0006] Technical problem: The present invention proposes a new thin film deposition technology based on plasma chemical vapor deposition to solve the problem of substrate damage or thin film caused by plasma bombardment of the substrate surface in traditional plasma deposition technologies (PECVD and ICPCVD). Defects and other issues

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Embodiment Construction

[0019] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0020] First of all, for the convenience of explanation, we define the positive z-axis direction passing through the center of the plane spiral coil and perpendicular to the downward direction of the coil, and define the r-direction as the direction perpendicular to the Z-axis. exist figure 2 In (a), when the planar coil 23 is injected with a lower frequency (500kHz) current by the radio frequency generator 21, there are two different electric fields in the discharge space at the same time, which are radial electrostatic fields ( Capacitive coupling) and the eddy electric field (inductive coupling) generated by the change of the magnetic field in the discharge space. In the non-parallel plate capacitively coupled plasma discharge mode, the RF input power is lower, resulting in lower coil current and thicker plasma shell, so that the...

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Abstract

The invention relates to a film deposition method, and particularly relates to a non-parallel plate type capacitive coupled plasma chemical vapor deposition method. The method adopts the following components: a planar rectangular spiral inductive antenna, a low-frequency power generator, an impedance matching network, a columnar vacuum chamber, quartz glass and a lining bracket. By controlling radio frequency input power and tuning matched capacitance, the method disclosed by the invention can be used for realizing stable capacitive coupled discharging in the vacuum chamber; the plasma is relatively low in density; a radial electrostatic field which is parallel to the surface of a lining and built by potential difference of the two ends of a coil plays a leading role, so that the motion of positive ions is limited in a direction parallel to the surface of the lining. Therefore, the method disclosed by the invention commences in two aspects, namely reduction of the plasma density and limitation on motion direction of the positive ions, so that bombardment caused by the positive ions to the film surface during a chemical vapor deposition can be remarkably inhibited, and surface damages are reduced. The system can be used for preparing various necessary passivation layers such as non-crystalline silicon and non-crystalline silicon nitride for a high-efficiency crystalline silicon solar cell.

Description

technical field [0001] The invention relates to a thin film deposition method based on plasma chemical vapor deposition, which belongs to the technical field of plasma chemical vapor deposition methods, and can be applied to various passivation thin layers of high-efficiency crystalline silicon solar cells, including amorphous silicon, amorphous nitride Preparation of silicon, amorphous silicon dioxide and amorphous silicon carbide, etc. Background technique [0002] A plasma is a collection of freely charged particles moving randomly. From a macroscopic point of view, plasma is electrically neutral. The simplest way to form it is to drive the two plates through a radio frequency voltage source, so that the low-pressure gas between the plates produces a discharge phenomenon. When the current flows from one plate to the other, the gas is "broken down" to generate plasma . Plasma discharges can produce chemically active species and thus enable the fabrication of materials w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/505
Inventor 肖少庆张学成顾晓峰丁荣
Owner JIANGNAN UNIV
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