Non-parallel plate type capacitive coupled plasma chemical vapor deposition method

Abstract

The invention relates to a film deposition method, and particularly relates to a non-parallel plate type capacitive coupled plasma chemical vapor deposition method. The method adopts the following components: a planar rectangular spiral inductive antenna, a low-frequency power generator, an impedance matching network, a columnar vacuum chamber, quartz glass and a lining bracket. By controlling radio frequency input power and tuning matched capacitance, the method disclosed by the invention can be used for realizing stable capacitive coupled discharging in the vacuum chamber; the plasma is relatively low in density; a radial electrostatic field which is parallel to the surface of a lining and built by potential difference of the two ends of a coil plays a leading role, so that the motion of positive ions is limited in a direction parallel to the surface of the lining. Therefore, the method disclosed by the invention commences in two aspects, namely reduction of the plasma density and limitation on motion direction of the positive ions, so that bombardment caused by the positive ions to the film surface during a chemical vapor deposition can be remarkably inhibited, and surface damages are reduced. The system can be used for preparing various necessary passivation layers such as non-crystalline silicon and non-crystalline silicon nitride for a high-efficiency crystalline silicon solar cell.

Description

technical field [0001] The invention relates to a thin film deposition method based on plasma chemical vapor deposition, which belongs to the technical field of plasma chemical vapor deposition methods, and can be applied to various passivation thin layers of high-efficiency crystalline silicon solar cells, including amorphous silicon, amorphous nitride Preparation of silicon, amorphous silicon dioxide and amorphous silicon carbide, etc. Background technique [0002] A plasma is a collection of freely charged particles moving randomly. From a macroscopic point of view, plasma is electrically neutral. The simplest way to form it is to drive the two plates through a radio frequency voltage source, so that the low-pressure gas between the plates produces a discharge phenomenon. When the current flows from one plate to the other, the gas is "broken down" to generate plasma . Plasma discharges can produce chemically active species and thus enable the fabrication of materials w...

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