13 results about "Plasma chemistry" patented technology

The invention relates to a dielectric barrier discharge-sliding arc coupled plasma reaction device and application thereof, and belongs to the technical field of plasma chemistry and efficient utilization of methane resources. The reaction device comprises a tubular reaction cavity, a high-voltage electrode arranged in the reaction cavity and a grounding electrode arranged on the outer side of the reaction cavity, and a dielectric barrier discharge structure is formed between the high-voltage electrode and the grounding electrode through the wall of the reaction cavity; at least two bent electrode parts which are arranged at intervals are arranged at the lower end of the high-voltage electrode, and gliding arc discharge is formed under the flowing action of reaction gas, so that dielectric barrier discharge and gliding arc discharge are simultaneously generated in the same reaction cavity. Through the coupling discharge mode, the synergistic effect of the high-energy density plasma and the large-volume uniform plasma is realized, and the activation efficiency and the reaction regulation and control capability of low-carbon alkane molecules can be effectively improved. The device is simple in structure and stable in operation, can be cooperatively used with a catalyst, and is used for plasma catalytic conversion and related reaction processes.

The invention relates to a plasma chemical vapor deposition device for depositing one or more layers of silicon dioxide onto the inner wall of a long hollow glass base tube, the device comprising a microwave generator, a plasma generator which in use receives microwaves from the generator, a cylindrical cavity extending through the generator, and a cylindrical bushing positioned in the cavity, wherein the base tube in use passes through the bushing, wherein over a part of the length of the bushing the bushing has at least one section with a reduced inner diameter, which at least one section provides a contact zone for the base tube, wherein the microwave generator is configured to generate microwaves with a wavelength Lw in the range of 40 mm to 400 mm, wherein the length of the at least one section with the reduced inner diameter is at most 0.1 x Lw and at least 1 mm.

This invention provides a chamber structure for a microwave plasma chemical vapor deposition apparatus that prevents the formation of two strong field regions in the microwave field, thereby avoiding the occurrence of the "double fireball phenomenon." [Solution] A chamber structure for a microwave plasma chemical vapor deposition apparatus, the chamber structure includes a housing 10 and a stage 30, the housing including an inner bottom surface 21, an inner top surface 22 and an inner ring wall surface 23. The inner bottom surface 21 and the inner top surface 22 are spaced apart from each other and face each other, the diameter of the inner bottom surface 21 is larger than the diameter of the inner top surface 22, and the inner top surface 22 protrudes toward the inner bottom surface 21. Both ends of the inner ring wall surface 23 are connected to the inner top surface 22 and the inner bottom surface 21, respectively, so that a chamber 20 is formed between the inner bottom surface 21, the inner top surface 22 and the inner ring wall surface 23, and the microwave field is located in the chamber 20. The stage 30 is provided in the chamber and has a stage surface facing the inner top surface 22.

The invention provides a plasma reactor for inhibiting ablation and a preparation method and application thereof, and belongs to the field of plasma chemistry. According to the invention, the graphitization degree gt is attached to the anode wall surface of the plasma reactor; the chemical stability of the coke layer is high and is far higher than the graphitization degree standard requirement gt of a common graphite anode; meanwhile, the conductive performance is good, the low ablation rate can still be kept in the high-temperature and high-current-density environment of thermal plasma, an original anode is protected, and the continuity and stability of electrode discharge are guaranteed, so that the continuous working time of the plasma generator is remarkably prolonged, and the service life of the plasma generator is prolonged. The problem that in the prior art, anode ablation loss hinders stable and efficient operation of the reactor is solved. According to the invention, the ablation rate of the anode can be slowed down only by forming the coke layer with high graphitization degree on the wall surface of the anode, and the problems of complex operation and high cost can be solved.

The invention discloses a preparation device and method for in-situ deposition of a DLC film on the inner surface of a metal pipe fitting after ion nitriding, and belongs to the technical field of material processes. The preparation device comprises a first air inlet pipe, a second air inlet pipe, an infrared thermometer, a vacuum chamber, and a mixed air inlet pipe, a direct-current pulse bias power supply, a sample table and a heating piece which are positioned in the vacuum chamber. The device can realize the integrated treatment of glow discharge ion nitriding and plasma chemical vapor deposition DLC film on the inner surface of the metal pipe fitting, effectively improves the binding force and surface hardness of the DLC film, reduces the equipment and operation threshold of the ion nitriding composite coating deposition technology, has the characteristics of simple equipment, low operation difficulty, high treatment efficiency and the like, and is suitable for industrial production. And large-scale industrial production is facilitated.

A matchless RF generator is disclosed that does not require a matching network (or the like) between the RF generator and the plasma. Plasmas have variable inductance or capacitance value during the plasma life cycle. For example, prior to ignition, the plasma chamber may have a first inductance and / or a first capacitance; during ignition, the plasma chamber may have a second inductance and / or a second capacitance; while the plasma is active, the plasma chamber with the plasma may have a third inductance and / or a third capacitance; and during a change in the plasma density, plasma chemistry, plasma brightness, constituent flow rate, plasma voltage, and plasma electric field the plasma chamber with the plasma may have a fourth inductance and / or fourth capacitance.

The invention discloses a low-temperature high-compactness mask and a preparation method thereof. The preparation method comprises the following steps: preparing a first silicon oxide film on the surface of a substrate by adopting an inductively coupled plasma chemical vapor deposition technology; preparing a second silicon oxide thin film on the surface of the first silicon oxide thin film by adopting an inductively coupled plasma chemical vapor deposition technology; coating photoresist on the second silicon dioxide thin film, exposing, developing and hardening; etching the first silicon oxide thin film and the second silicon oxide thin film to expose the substrate, and removing the residual photoresist to prepare a low-temperature high-compactness mask; wherein the radio frequency power for preparing the first silicon oxide thin film and the second silicon oxide thin film is 500W-650W; o2: SiH4 in the preparation of the first silicon oxide film and the preparation of the second silicon oxide film is greater than or equal to 2; the film forming temperature for preparing the first silicon oxide thin film and the second silicon oxide thin film is 130-200 DEG C.

The application discloses a kind of hydrogen-containing gas plasma processing equipment, belong to chemical technology field, including pyrogenic hydrogen and solid carbon processing mechanism, the pyrogenic hydrogen and solid carbon processing mechanism includes first plasma torch, the first plasma chemical reactor is connected to first plasma torch, the first plasma chemical reactor is connected with carbon dioxide separator, the carbon dioxide separator is connected with first gas flow separator.It also includes hydrogen sulfide pyrolysis mechanism, the hydrogen sulfide pyrolysis mechanism includes second plasma torch, the second plasma torch is connected with second plasma chemical reactor, when guide air cylinder or restraint frame is aged, seal cover is removed, and then the restraint frame and guide air cylinder are taken out, replace restraint frame or guide air cylinder, then the new restraint frame and guide air cylinder are reset, and then the seal cover is covered on the shell, to facilitate replacement guide air cylinder or restraint frame.

A matchless RF generator is disclosed that does not require a matching network (or the like) between the RF generator and the plasma. Plasmas have variable inductance or capacitance value during the plasma life cycle. For example, prior to ignition, the plasma chamber may have a first inductance and / or a first capacitance; during ignition, the plasma chamber may have a second inductance and / or a second capacitance; while the plasma is active, the plasma chamber with the plasma may have a third inductance and / or a third capacitance; and during a change in the plasma density, plasma chemistry, plasma brightness, constituent flow rate, plasma voltage, and plasma electric field the plasma chamber with the plasma may have a fourth inductance and / or fourth capacitance.

This invention relates to the field of plasma chemistry and discloses a high-throughput plasma reaction device and a method for decomposing hydrogen sulfide, comprising: an inner cylinder (1) containing reaction tubes (14); an outer cylinder (2) nested outside the inner cylinder (1); a central high-voltage electrode (3); grounding electrodes (4) respectively surrounding or forming sidewalls on the outer walls of each of the reaction tubes (14); a blocking medium (6) disposed on at least a portion of the outer surface of the central high-voltage electrode (3); the ratio between the distance L1 between the outer wall of the blocking medium and the inner wall of the grounding electrode and the length L2 of the discharge region is: L1:L2 = 1:(0.5~6000). The high-throughput plasma reaction device provided by this invention can achieve continuous and stable hydrogen sulfide decomposition process at a significantly higher hydrogen sulfide conversion rate, and the device can achieve long-term operation.

This invention provides a chamber structure for a microwave plasma chemical vapor deposition apparatus that prevents the formation of two strong field regions in the microwave field, thereby avoiding the occurrence of the "double fireball phenomenon." [Solution] A chamber structure for a microwave plasma chemical vapor deposition apparatus, the chamber structure includes a housing 10 and a stage 30, the housing including an inner bottom surface 21, an inner top surface 22 and an inner ring wall surface 23. The inner bottom surface 21 and the inner top surface 22 are spaced apart from each other and face each other, the diameter of the inner bottom surface 21 is larger than the diameter of the inner top surface 22, and the inner top surface 22 protrudes toward the inner bottom surface 21. Both ends of the inner ring wall surface 23 are connected to the inner top surface 22 and the inner bottom surface 21, respectively, so that a chamber 20 is formed between the inner bottom surface 21, the inner top surface 22 and the inner ring wall surface 23, and the microwave field is located in the chamber 20. The stage 30 is provided in the chamber and has a stage surface facing the inner top surface 22.

The application relates to the field of plasma chemistry, and discloses a high-flux low-temperature plasma reactor and a method for decomposing hydrogen sulfide, which comprises the following steps: an inner cylinder (1) containing at least two parallel reaction tubes (14); an outer cylinder (2) nested outside the inner cylinder (1); a central high-voltage electrode (3) arranged in each reaction tube (14) respectively; a grounding electrode (4) formed by solid conductive material; and a blocking medium forming at least part of the side wall of the reaction tube or being arranged around the inner side wall of each reaction tube (14). The aforementioned high-flux low-temperature plasma reactor can be used for plasma decomposition of hydrogen sulfide, and the reactor can generate uniform and efficient dielectric barrier discharge, so that hydrogen sulfide is directly decomposed into hydrogen and sulfur.