44 results about "Plasma chemistry" patented technology

A concentration of at least one chemical reaction product in a drilling fluid is determined after the drilling fluid has interacted with a plasma discharge produced via one or more electrodes of a drill bit of a pulse power drill string disposed in a wellbore for drilling the borehole. The concentration of the at least one chemical reaction product is correlated to a relation between an arc and a spark of the plasma discharge. The relation between the arc and spark can subsequently be evaluated to determine updates to pulse power drilling parameters and / or to perform formation and drilling fluid evaluation.

Described herein are methods of filling features with tungsten, and related systems and apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods involve selective inhibition along a feature profile. Methods of selectively inhibiting tungsten nucleation can include exposing the feature to a direct or remote plasma. In certain embodiments, the substrate can be biased during selective inhibition. Process parameters including bias power, exposure time, plasma power, process pressure and plasma chemistry can be used to tune the inhibition profile. The methods described herein can be used to fill vertical features, such as in tungsten vias, and horizontal features, such as vertical NAND (VNAND) wordlines. The methods may be used for both conformal fill and bottom-up / inside-out fill. Examples of applications include logic and memory contact fill, DRAM buried wordline fill, vertically integrated memory gate / wordline fill, and 3-D integration using through-silicon vias.

Provided is a method of manufacturing a gas barrier film in which, in a case where a film is continuously formed on an elongated support through RtoR, abnormal discharge can be suppressed, and a gas barrier film having high gas barrier performance can be stably prepared. There is provided a method of manufacturing a gas barrier film, the method including: forming an inorganic layer on an elongated support or on an underlying organic layer on the support while transporting the support in a longitudinal direction, in which a plasma is generated by supplying raw material gas between the support and a conductor electrode having a porous structure that is disposed to face the support, and the inorganic layer is formed using a plasma chemical vapor deposition method, and before a main film forming step of forming the inorganic layer on the support or on the underlying organic layer on the support, a preliminary film forming step is provided, the preliminary film forming step being a step of forming an insulating inorganic layer having a lower density than the inorganic layer on a surface of the conductor electrode by setting power that is applied to the conductor electrode to be lower than power in the main film forming step while continuing the supply of the raw material gas and the application of the power until the main film forming step.

According to the technical scheme, the plasma chemical vapor deposition equipment workbench is characterized in that the plasma chemical vapor deposition equipment workbench comprises a containing box, a containing plate is movably arranged in the containing box in a sleeved mode, and plasma chemical vapor deposition equipment is fixedly connected to the top face of the containing plate; the grid baffle is movably arranged in the placing box in a sleeved mode, and sealing gaskets are fixedly connected to the left side, the right side and the bottom face of the grid baffle; and the adjusting assembly is arranged in the containing box and used for adjusting the position of the containing plate, by arranging the containing box, when a worker fixes a grid baffle into the containing box, a sealing gasket can seal the space between the containing box and the grid baffle at the moment, so that wet gas entering the containing box is reduced, and the working efficiency is improved. Therefore, the plasma chemical vapor deposition equipment is prevented from being damped and damaged or short-circuited, and the service life of the plasma chemical vapor deposition equipment is prolonged.

The invention relates to a dielectric barrier discharge-sliding arc coupled plasma reaction device and application thereof, and belongs to the technical field of plasma chemistry and efficient utilization of methane resources. The reaction device comprises a tubular reaction cavity, a high-voltage electrode arranged in the reaction cavity and a grounding electrode arranged on the outer side of the reaction cavity, and a dielectric barrier discharge structure is formed between the high-voltage electrode and the grounding electrode through the wall of the reaction cavity; at least two bent electrode parts which are arranged at intervals are arranged at the lower end of the high-voltage electrode, and gliding arc discharge is formed under the flowing action of reaction gas, so that dielectric barrier discharge and gliding arc discharge are simultaneously generated in the same reaction cavity. Through the coupling discharge mode, the synergistic effect of the high-energy density plasma and the large-volume uniform plasma is realized, and the activation efficiency and the reaction regulation and control capability of low-carbon alkane molecules can be effectively improved. The device is simple in structure and stable in operation, can be cooperatively used with a catalyst, and is used for plasma catalytic conversion and related reaction processes.

The utility model relates to the technical field of cooling of microwave plasma chemical vapor deposition (MPCVD) equipment, and discloses a cooling system for MPCVD diamond synthesis equipment, which comprises a main machine body, a water storage tank, a water collecting tank and a water pump, and the water storage tank and the water collecting tank are arranged on the outer side of the main machine body. Through cooperation of a water pump, a water storage tank, a third connecting pipe, a first connecting pipe and a liquid inlet pipe, cooling liquid is guided into a water inlet hole and enters a plurality of L-shaped cooling hole channels to evenly cool the substrate table, then the cooling liquid is discharged out of the L-shaped cooling hole channels through a liquid outlet pipe, and the cooling liquid enters a water collecting tank through a circular pipe and a second connecting pipe to be stored; the cooling liquid is in direct contact with the substrate table, so that heat does not need to be conducted through the top wall of the substrate supporting table before cooling, and the cooling effect is greatly improved.

The invention discloses a preparation method of a Bi2Te3 film, which comprises the following steps of: performing plasma chemical vapor deposition on a high-purity bismuth source and a high-purity antimony source on a clean substrate in vacuum at high temperature under the condition of introducing hydrogen to obtain a Bi2Te3 film crude product; the preparation of the Bi2Te3 film adopts an experimental method of plasma-assisted chemical vapor deposition, so that the deposition process can be carried out at a lower temperature, and compared with a traditional method, the Te evaporation phenomenon caused by too high temperature can be effectively avoided, and the vacancy defect density of Te in the film is reduced, thereby improving the crystallization quality of the Bi2Te3 film. According to the method, the Bi2Te3 thin film crude product is subjected to annealing treatment to remove H impurities in the Bi2Te3 thin film crude product, and the internal stress of the thin film is reduced through the treatment of naturally cooling to the room temperature, so that the high-quality Bi2Te3 single crystal thin film can be obtained. In addition, Bi2Te3 films with different shapes, sizes and thicknesses can be grown through the preparation method of the Bi2Te3 film, and industrial production and application are facilitated.

The invention relates to the technical field of chemical research sample tables, and discloses a thermal desorption chamber and a sample table of a plasma chemical research system.The thermal desorption chamber comprises four supporting legs and a table board, the table board is fixedly installed at the tops of the four supporting legs, and an extension mechanism is arranged on the side face of the table board; a height adjusting mechanism is arranged at the bottom of the table plate; the extension mechanism comprises display boards, grooves, positioning grooves, positioning columns, limiting frames, sliding blocks, connecting rods, compression springs and movable rods, the two display boards are connected to the right side and the rear side of the table board through hinges, the two grooves are formed in the right side and the rear side of the table board respectively, and the two pairs of positioning grooves are formed in the inner walls of the two grooves respectively. Through cooperative use of the extension mechanism, the area of the table board can be increased, the expanded table top space can effectively distribute and arrange experimental equipment, samples and tools, and the table top space is increased according to actual needs to adapt to experimental research requirements of different scales.

The present invention relates to a method for treating domestic waste, in particular to a method for treating waste with low moisture content by plasma chemical destruction. The object of the present invention is to provide a method for destroying organic waste with low moisture content, thereby achieving the technical effect of widening the scope of the technical solution. The destruction method achieves the technical effect. Organic waste with low moisture content is fed into a reactor through an inlet, and waste of biological origin is also fed. The reactor is provided in the form of a closed cavity, the inner surface of which is fully or partially conductive and earthed. An electrode protrudes into the reactor and is spaced apart from the grounded surface. A high voltage pulse is provided to the electrode. The pulse causes a corona discharge current to form in the gap between the electrode and the conductive surface of the reactor.

The invention relates to an HEMT (High Electron Mobility Transistor) power device based on a single field plate and a preparation method. The HEMT power device based on the single field plate comprises a substrate; an epitaxial layer; a source ohmic contact electrode; a drain ohmic contact electrode; an insulating layer or a first gate layer; a gate passivation layer; the grid opening penetrates through the grid passivation layer to reach the insulating layer or the first grid layer; the gate field plate is arranged on the gate passivation layer; wherein the gate passivation layer is formed by arranging SiN and / or SiO2 on the barrier layer through a low-pressure chemical vapor deposition method or an inductively coupled plasma-chemical vapor deposition method. According to the HEMT power device, the compactness of the gate passivation layer is better, and the surface passivation effect is better, so that more uniform electric field distribution can be obtained in a single field plate structure jointly formed by the gate opening and the gate field plate, the obtained HEMT power device based on the single field plate has a better voltage withstanding result, and meanwhile, the HEMT power device based on the single field plate is simple in process, low in manufacturing cost and easy to popularize. And the reliability is higher.

The invention discloses a plasma jet generation characteristic regulation and control device and method based on tube wall temperature, and the device comprises a dielectric barrier tube which is made of a heat-resistant insulating material and is used for generating a plasma jet at an outlet of the dielectric barrier tube when rare gas is introduced into the dielectric barrier tube and discharge voltage is applied between a high-voltage electrode and a ground electrode; the high-voltage electrode is arranged in the dielectric barrier tube and is used for applying discharge voltage to generate plasma; the ground electrode is arranged opposite to the high-voltage electrode and is used for being matched with the high-voltage electrode to form a discharge path in the dielectric barrier tube; and the heating device is arranged to change the generation and propagation characteristics of the ionization waves by regulating and controlling the pipe wall temperature of the dielectric barrier pipe, so as to regulate and control the length and the chemical activity of the plasma jet. According to the invention, the length of the plasma jet can be greatly increased and the chemical activity of the plasma can be improved without changing any power supply parameters, electrode structure parameters, working gas parameters and the like.

The present invention relates to the field of plasma chemistry and discloses a high-flux low-temperature plasma discharge device and a method for decomposing hydrogen sulfide, comprising: a first cavity (1), a second cavity (2) nested inside the first cavity (1); a high-voltage electrode (3) and a grounding electrode (4) arranged in the first cavity (1), and a blocking medium, wherein the blocking medium is arranged on the outer surface of the high-voltage electrode (3) and / or the grounding electrode (4). The high-flux low-temperature plasma discharge device provided by the present invention has the advantages of high hydrogen sulfide conversion rate, low energy consumption, and the ability to achieve large-flow hydrogen sulfide treatment.

The invention relates to a plasma chemical vapor deposition device for depositing one or more layers of silicon dioxide onto the inner wall of a long hollow glass base tube, the device comprising a microwave generator, a plasma generator which in use receives microwaves from the generator, a cylindrical cavity extending through the generator, and a cylindrical bushing positioned in the cavity, wherein the base tube in use passes through the bushing, wherein over a part of the length of the bushing the bushing has at least one section with a reduced inner diameter, which at least one section provides a contact zone for the base tube, wherein the microwave generator is configured to generate microwaves with a wavelength Lw in the range of 40 mm to 400 mm, wherein the length of the at least one section with the reduced inner diameter is at most 0.1 x Lw and at least 1 mm.

Doped or undoped silicon carbide films may be deposited using remote plasma chemical vapor deposition (CVD) techniques. One or more silicon-containing precursors are provided to the reaction chamber. A free radical species, such as a free radical species of hydrogen, is provided in a substantially low energy state or ground state and interacts with one or more silicon-containing precursors to deposit a silicon carbide film. A carbon-containing precursor may flow with one or more silicon-containing precursors, where the carbon-containing precursor has one or more carbon-carbon double bonds or triple bonds, and each silicon-containing precursor is a silane-based precursor having at least one silicon atom having two or more hydrogen atoms bonded to the silicon atom.

The present invention relates to a method for treating domestic waste, in particular, to a method for treating waste with low water content by plasma chemical destruction. The object of the present invention is to provide a method for destroying organic waste with low water content, so as to achieve the technical effect of broadening the scope of the technical scheme. The technical effect is obtained by a destruction method, wherein organic waste with low water content is loaded into a reactor via an input port, and waste of biological origin is also loaded. The reactor is provided in the form of a closed chamber, the inner surface of which is fully or partially conductive and grounded. Electrodes protrude into the reactor, which are isolated from the grounded surface. High voltage pulses are provided to the electrodes. The pulses cause a corona discharge current to form in the gap between the electrode and the conductive surface of the reactor.

The invention discloses a plasma chemical reaction device convenient for product separation, and relates to the technical field of chemical reactors, the plasma chemical reaction device comprises a base, the top of the base is fixedly provided with a fixing frame and a stirring mechanism, and the top of the base is fixedly provided with stable frames on both sides of the stirring mechanism; a spraying mechanism is fixedly installed between the two stabilizing frames, a driving mechanism is arranged between the spraying mechanism and the stirring mechanism, a plasma module is installed in the fixing frame, a fixing sleeve is rotatably installed outside the fixing frame through a hinge, and one end of the fixing sleeve is fixedly installed on the fixing frame through a screw. Through the design characteristic of feeding of the plasma torch main body, raw materials in the plasma torch main body and the reaction box can be effectively mixed, through the arrangement of the air groove, introduced argon rotates, gas in the reaction box is rapidly discharged, and meanwhile it is guaranteed that the temperature in the reaction box is uniform.

The invention relates to a sliding arc plasma exciter for a high-pressure environment, and relates to the field of plasma chemistry and plasma ignition combustion supporting. A sliding arc plasma exciter facing a high-pressure environment comprises an electrode core and an exciter injection section, the electrode core comprises a high-voltage electrode, and the high-voltage electrode comprises a high-voltage electrode tip and a high-voltage electrode rod which are arranged in the length direction; one end of the exciter injection section forms a throat which is gradually shrunk and expanded, the end is communicated with the exciter outlet section, the outer side wall of the exciter injection section is communicated with the interior of the exciter injection section and is provided with an air inlet pipe, and an oil injection hole is formed in the flaring part of the throat; the high-voltage electrode stem is located in the exciter injection section, the high-voltage electrode tip extends into the flaring part of the throat, and the high-voltage electrode is made of a metal material capable of generating alpha rays or beta rays. The gliding arc plasma exciter for the high-pressure environment has the performance of being suitable for the high-pressure environment under the condition that the breakdown voltage of a power supply and the insulation strength of a cable are not changed.

This invention provides a chamber structure for a microwave plasma chemical vapor deposition apparatus that prevents the formation of two strong field regions in the microwave field, thereby avoiding the occurrence of the "double fireball phenomenon." [Solution] A chamber structure for a microwave plasma chemical vapor deposition apparatus, the chamber structure includes a housing 10 and a stage 30, the housing including an inner bottom surface 21, an inner top surface 22 and an inner ring wall surface 23. The inner bottom surface 21 and the inner top surface 22 are spaced apart from each other and face each other, the diameter of the inner bottom surface 21 is larger than the diameter of the inner top surface 22, and the inner top surface 22 protrudes toward the inner bottom surface 21. Both ends of the inner ring wall surface 23 are connected to the inner top surface 22 and the inner bottom surface 21, respectively, so that a chamber 20 is formed between the inner bottom surface 21, the inner top surface 22 and the inner ring wall surface 23, and the microwave field is located in the chamber 20. The stage 30 is provided in the chamber and has a stage surface facing the inner top surface 22.

The invention provides a plasma reactor for inhibiting ablation and a preparation method and application thereof, and belongs to the field of plasma chemistry. According to the invention, the graphitization degree gt is attached to the anode wall surface of the plasma reactor; the chemical stability of the coke layer is high and is far higher than the graphitization degree standard requirement gt of a common graphite anode; meanwhile, the conductive performance is good, the low ablation rate can still be kept in the high-temperature and high-current-density environment of thermal plasma, an original anode is protected, and the continuity and stability of electrode discharge are guaranteed, so that the continuous working time of the plasma generator is remarkably prolonged, and the service life of the plasma generator is prolonged. The problem that in the prior art, anode ablation loss hinders stable and efficient operation of the reactor is solved. According to the invention, the ablation rate of the anode can be slowed down only by forming the coke layer with high graphitization degree on the wall surface of the anode, and the problems of complex operation and high cost can be solved.

The invention relates to a method and an apparatus for performing a plasma chemical vapour deposition process. The apparatus comprises a mainly cylindrical resonator being provided with an outer cylindrical wall and an inner coaxial cylindrical wall defining therebetween a resonant cavity that is operable at an operating frequency. The resonant cavity extends in a circumferential direction around a cylindrical axis of the inner and outer cylindrical wall. Further, the outer cylindrical wall includes an input port connectable to an input waveguide. In addition, the inner cylindrical wall includes slit sections extending in a circumferential direction around the cylindrical axis. A greatest dimension defining the aperture of the slit sections is smaller than half the wavelength of the operating frequency.

The invention discloses a microwave plasma chemical vapor phase efficient deposition device which comprises a main body, a microwave generator is arranged above the main body, a rotating shaft is installed at the bottom of the inner side of the main body, and a first bevel gear is fixed to the rotating shaft. By arranging the rotatable and inclined annular sample table, in the deposition process, the driving mechanism drives the rotating shaft, the vertical rod, the cross-shaped fixing frame and the annular sample table to rotate, so that all positions on the surface of a substrate material on the annular sample table can sequentially pass through different gas concentration areas and plasma environments; inconsistent deposition thickness caused by different local environments is avoided, insufficient or excessive supply of the active particles in some areas possibly caused by influence of gas flow on transmission of the active particles is avoided, the directional effect of the gas flow on deposition of the active particles can be disrupted by rotating the substrate, and the deposition thickness of the active particles is increased. The active particles are more uniformly deposited on the substrate, and the uniformity and consistency of the film are improved.

To provide a film formation technology that improves step coverage property of a boron nitride film.SOLUTION: Disclosed is a boron nitride film formation method including (a) a step for executing a sequence. The sequence includes: (a1) a step for supplying a first processing gas containing a first borazine compound and plasma chemical species to a substrate disposed in a chamber of a film formation device, in order to form a boron nitride film on the substrate; and (a2) a step for supplying plasma chemical species to the substrate without supplying the first processing gas to the substrate. The film formation method further includes (b) a step for supplying a second processing gas that contains a second borazine compound containing an alkyl group to the substrate without supplying plasma chemical species to the substrate. The film formation method further includes a step for repeating a cycle including (a) and (b).SELECTED DRAWING: Figure 1

The present invention relates to a method for managing domestic waste, in particular to a method for treating waste by a method of plasma-chemical destruction. The present invention aims to obtain a technical effect that broadens the scope of the technical solution by providing a method for destroying domestic waste under a low-temperature process similar to that of the environment. The technical effect is obtained by a destruction method. Domestic waste is fed into a reactor through an inlet, which further restricts the ingress of atmospheric air into the reactor. The reactor is provided in the form of a closed cavity, the inner surface of which is fully or partially conductive and grounded. An electrode projects into the reactor, which is further separated from the grounded surface. A high voltage pulse is provided to the electrode. The pulse causes a corona discharge current to form in the gap between the electrode and the conductive surface of the reactor.

The invention discloses a preparation device and method for in-situ deposition of a DLC film on the inner surface of a metal pipe fitting after ion nitriding, and belongs to the technical field of material processes. The preparation device comprises a first air inlet pipe, a second air inlet pipe, an infrared thermometer, a vacuum chamber, and a mixed air inlet pipe, a direct-current pulse bias power supply, a sample table and a heating piece which are positioned in the vacuum chamber. The device can realize the integrated treatment of glow discharge ion nitriding and plasma chemical vapor deposition DLC film on the inner surface of the metal pipe fitting, effectively improves the binding force and surface hardness of the DLC film, reduces the equipment and operation threshold of the ion nitriding composite coating deposition technology, has the characteristics of simple equipment, low operation difficulty, high treatment efficiency and the like, and is suitable for industrial production. And large-scale industrial production is facilitated.

The invention discloses plasma treatment equipment for hydrogen-containing gas, and belongs to the technical field of chemical engineering, the plasma treatment equipment comprises a treatment mechanism for generating hydrogen and solid carbon through pyrolysis, the treatment mechanism for generating hydrogen and solid carbon through pyrolysis comprises a first plasma torch, and the first plasma torch is connected with a first plasma chemical reactor; the first plasma chemical reactor is connected with a carbon sequestration separator, and the carbon sequestration separator is connected with a first airflow separator. The device further comprises a hydrogen sulfide pyrolysis mechanism, the hydrogen sulfide pyrolysis mechanism comprises a second plasma torch, the second plasma torch is connected with a second plasma chemical reactor, after the gas guide cylinder or the restraint frame is aged, the sealing cover is detached, then the restraint frame and the gas guide cylinder are taken out, and the restraint frame or the gas guide cylinder is replaced. And then the new restraint frame and the new gas guide cylinder are reset, and the sealing cover is covered on the shell, so that the gas guide cylinder or the restraint frame is convenient to replace.

A matchless RF generator is disclosed that does not require a matching network (or the like) between the RF generator and the plasma. Plasmas have variable inductance or capacitance value during the plasma life cycle. For example, prior to ignition, the plasma chamber may have a first inductance and / or a first capacitance; during ignition, the plasma chamber may have a second inductance and / or a second capacitance; while the plasma is active, the plasma chamber with the plasma may have a third inductance and / or a third capacitance; and during a change in the plasma density, plasma chemistry, plasma brightness, constituent flow rate, plasma voltage, and plasma electric field the plasma chamber with the plasma may have a fourth inductance and / or fourth capacitance.

The present invention relates to the field of producing nitric oxide (NO)-enriched gas mixtures. In the general aspect, the invention may be directed to a system for producing a nitric oxide (NO)-enriched gas mixture. The system may include: a first gas mixture supply unit configured to supply a first gas mixture, said first gas mixture comprising N2 and O2, wherein a volume ratio between N2 and O2 may be between 49:1 and 9:1; and at least one plasma reactor unit in fluid communication with the first gas mixture supply unit, wherein the at least one plasma reactor unit may be configured to receive the first gas mixture and to create an electric discharge to induce a plasma chemical conversion of at least a portion of the first gas mixture into NO, to produce the NO-enriched gas mixture.

The invention discloses a low-temperature high-compactness mask and a preparation method thereof. The preparation method comprises the following steps: preparing a first silicon oxide film on the surface of a substrate by adopting an inductively coupled plasma chemical vapor deposition technology; preparing a second silicon oxide thin film on the surface of the first silicon oxide thin film by adopting an inductively coupled plasma chemical vapor deposition technology; coating photoresist on the second silicon dioxide thin film, exposing, developing and hardening; etching the first silicon oxide thin film and the second silicon oxide thin film to expose the substrate, and removing the residual photoresist to prepare a low-temperature high-compactness mask; wherein the radio frequency power for preparing the first silicon oxide thin film and the second silicon oxide thin film is 500W-650W; o2: SiH4 in the preparation of the first silicon oxide film and the preparation of the second silicon oxide film is greater than or equal to 2; the film forming temperature for preparing the first silicon oxide thin film and the second silicon oxide thin film is 130-200 DEG C.

The invention relates to a capacitor structure and a preparation method thereof, and a semiconductor structure, and the preparation method of the capacitor structure comprises the steps: providing a substrate which comprises a substrate, and a first electrode layer, a first dielectric layer, a second electrode layer and an anti-reflection layer which are sequentially formed on the substrate; etching the anti-reflection layer, the second electrode layer and a part of the first dielectric layer to form a capacitor groove; dangling bond removal processing is carried out on the exposed surface of the anti-reflection layer and the surface, exposed out of the capacitor groove, of the first dielectric layer; a charge blocking layer is formed on the exposed surface of the anti-reflection layer and the exposed surface of the first dielectric layer, and the charge blocking layer is used for being combined with plasma to achieve blocking of plasma charges; forming a second dielectric layer on the charge barrier layer by adopting a high-density plasma chemical vapor deposition process or a plasma enhanced chemical vapor deposition process; and etching the second dielectric layer, the charge barrier layer and the substrate to form a through hole. According to the preparation method of the capacitor structure, the TDDB performance of the capacitor structure can be improved.

A doped or undoped silicon carbide film may be deposited using remote plasma chemical vapor deposition (CVD) techniques. One or more silicon-containing precursors are provided to a reaction chamber. Free radical species, such as hydrogen free radical species, are provided in a substantially low energy state or ground state and interact with one or more silicon-containing precursors to deposit a silicon carbide film. A carbon-containing precursor may flow with one or more silicon-containing precursors, wherein the carbon-containing precursor has one or more carbon-carbon double bonds or triple bonds, and each silicon-containing precursor is a silane-based precursor having at least one silicon atom having two or more hydrogen atoms bonded to the silicon atom.