25 results about "Plasma chemistry" patented technology

Provided is a method of manufacturing a gas barrier film in which, in a case where a film is continuously formed on an elongated support through RtoR, abnormal discharge can be suppressed, and a gas barrier film having high gas barrier performance can be stably prepared. There is provided a method of manufacturing a gas barrier film, the method including: forming an inorganic layer on an elongated support or on an underlying organic layer on the support while transporting the support in a longitudinal direction, in which a plasma is generated by supplying raw material gas between the support and a conductor electrode having a porous structure that is disposed to face the support, and the inorganic layer is formed using a plasma chemical vapor deposition method, and before a main film forming step of forming the inorganic layer on the support or on the underlying organic layer on the support, a preliminary film forming step is provided, the preliminary film forming step being a step of forming an insulating inorganic layer having a lower density than the inorganic layer on a surface of the conductor electrode by setting power that is applied to the conductor electrode to be lower than power in the main film forming step while continuing the supply of the raw material gas and the application of the power until the main film forming step.

The invention relates to a dielectric barrier discharge-sliding arc coupled plasma reaction device and application thereof, and belongs to the technical field of plasma chemistry and efficient utilization of methane resources. The reaction device comprises a tubular reaction cavity, a high-voltage electrode arranged in the reaction cavity and a grounding electrode arranged on the outer side of the reaction cavity, and a dielectric barrier discharge structure is formed between the high-voltage electrode and the grounding electrode through the wall of the reaction cavity; at least two bent electrode parts which are arranged at intervals are arranged at the lower end of the high-voltage electrode, and gliding arc discharge is formed under the flowing action of reaction gas, so that dielectric barrier discharge and gliding arc discharge are simultaneously generated in the same reaction cavity. Through the coupling discharge mode, the synergistic effect of the high-energy density plasma and the large-volume uniform plasma is realized, and the activation efficiency and the reaction regulation and control capability of low-carbon alkane molecules can be effectively improved. The device is simple in structure and stable in operation, can be cooperatively used with a catalyst, and is used for plasma catalytic conversion and related reaction processes.

The invention relates to an HEMT (High Electron Mobility Transistor) power device based on a single field plate and a preparation method. The HEMT power device based on the single field plate comprises a substrate; an epitaxial layer; a source ohmic contact electrode; a drain ohmic contact electrode; an insulating layer or a first gate layer; a gate passivation layer; the grid opening penetrates through the grid passivation layer to reach the insulating layer or the first grid layer; the gate field plate is arranged on the gate passivation layer; wherein the gate passivation layer is formed by arranging SiN and / or SiO2 on the barrier layer through a low-pressure chemical vapor deposition method or an inductively coupled plasma-chemical vapor deposition method. According to the HEMT power device, the compactness of the gate passivation layer is better, and the surface passivation effect is better, so that more uniform electric field distribution can be obtained in a single field plate structure jointly formed by the gate opening and the gate field plate, the obtained HEMT power device based on the single field plate has a better voltage withstanding result, and meanwhile, the HEMT power device based on the single field plate is simple in process, low in manufacturing cost and easy to popularize. And the reliability is higher.

The present invention relates to the field of plasma chemistry and discloses a high-flux low-temperature plasma discharge device and a method for decomposing hydrogen sulfide, comprising: a first cavity (1), a second cavity (2) nested inside the first cavity (1); a high-voltage electrode (3) and a grounding electrode (4) arranged in the first cavity (1), and a blocking medium, wherein the blocking medium is arranged on the outer surface of the high-voltage electrode (3) and / or the grounding electrode (4). The high-flux low-temperature plasma discharge device provided by the present invention has the advantages of high hydrogen sulfide conversion rate, low energy consumption, and the ability to achieve large-flow hydrogen sulfide treatment.

The invention relates to a plasma chemical vapor deposition device for depositing one or more layers of silicon dioxide onto the inner wall of a long hollow glass base tube, the device comprising a microwave generator, a plasma generator which in use receives microwaves from the generator, a cylindrical cavity extending through the generator, and a cylindrical bushing positioned in the cavity, wherein the base tube in use passes through the bushing, wherein over a part of the length of the bushing the bushing has at least one section with a reduced inner diameter, which at least one section provides a contact zone for the base tube, wherein the microwave generator is configured to generate microwaves with a wavelength Lw in the range of 40 mm to 400 mm, wherein the length of the at least one section with the reduced inner diameter is at most 0.1 x Lw and at least 1 mm.

Doped or undoped silicon carbide films may be deposited using remote plasma chemical vapor deposition (CVD) techniques. One or more silicon-containing precursors are provided to the reaction chamber. A free radical species, such as a free radical species of hydrogen, is provided in a substantially low energy state or ground state and interacts with one or more silicon-containing precursors to deposit a silicon carbide film. A carbon-containing precursor may flow with one or more silicon-containing precursors, where the carbon-containing precursor has one or more carbon-carbon double bonds or triple bonds, and each silicon-containing precursor is a silane-based precursor having at least one silicon atom having two or more hydrogen atoms bonded to the silicon atom.

This invention provides a chamber structure for a microwave plasma chemical vapor deposition apparatus that prevents the formation of two strong field regions in the microwave field, thereby avoiding the occurrence of the "double fireball phenomenon." [Solution] A chamber structure for a microwave plasma chemical vapor deposition apparatus, the chamber structure includes a housing 10 and a stage 30, the housing including an inner bottom surface 21, an inner top surface 22 and an inner ring wall surface 23. The inner bottom surface 21 and the inner top surface 22 are spaced apart from each other and face each other, the diameter of the inner bottom surface 21 is larger than the diameter of the inner top surface 22, and the inner top surface 22 protrudes toward the inner bottom surface 21. Both ends of the inner ring wall surface 23 are connected to the inner top surface 22 and the inner bottom surface 21, respectively, so that a chamber 20 is formed between the inner bottom surface 21, the inner top surface 22 and the inner ring wall surface 23, and the microwave field is located in the chamber 20. The stage 30 is provided in the chamber and has a stage surface facing the inner top surface 22.

The invention provides a plasma reactor for inhibiting ablation and a preparation method and application thereof, and belongs to the field of plasma chemistry. According to the invention, the graphitization degree gt is attached to the anode wall surface of the plasma reactor; the chemical stability of the coke layer is high and is far higher than the graphitization degree standard requirement gt of a common graphite anode; meanwhile, the conductive performance is good, the low ablation rate can still be kept in the high-temperature and high-current-density environment of thermal plasma, an original anode is protected, and the continuity and stability of electrode discharge are guaranteed, so that the continuous working time of the plasma generator is remarkably prolonged, and the service life of the plasma generator is prolonged. The problem that in the prior art, anode ablation loss hinders stable and efficient operation of the reactor is solved. According to the invention, the ablation rate of the anode can be slowed down only by forming the coke layer with high graphitization degree on the wall surface of the anode, and the problems of complex operation and high cost can be solved.

The invention relates to a method and an apparatus for performing a plasma chemical vapour deposition process. The apparatus comprises a mainly cylindrical resonator being provided with an outer cylindrical wall and an inner coaxial cylindrical wall defining therebetween a resonant cavity that is operable at an operating frequency. The resonant cavity extends in a circumferential direction around a cylindrical axis of the inner and outer cylindrical wall. Further, the outer cylindrical wall includes an input port connectable to an input waveguide. In addition, the inner cylindrical wall includes slit sections extending in a circumferential direction around the cylindrical axis. A greatest dimension defining the aperture of the slit sections is smaller than half the wavelength of the operating frequency.

The invention discloses a microwave plasma chemical vapor phase efficient deposition device which comprises a main body, a microwave generator is arranged above the main body, a rotating shaft is installed at the bottom of the inner side of the main body, and a first bevel gear is fixed to the rotating shaft. By arranging the rotatable and inclined annular sample table, in the deposition process, the driving mechanism drives the rotating shaft, the vertical rod, the cross-shaped fixing frame and the annular sample table to rotate, so that all positions on the surface of a substrate material on the annular sample table can sequentially pass through different gas concentration areas and plasma environments; inconsistent deposition thickness caused by different local environments is avoided, insufficient or excessive supply of the active particles in some areas possibly caused by influence of gas flow on transmission of the active particles is avoided, the directional effect of the gas flow on deposition of the active particles can be disrupted by rotating the substrate, and the deposition thickness of the active particles is increased. The active particles are more uniformly deposited on the substrate, and the uniformity and consistency of the film are improved.

To provide a film formation technology that improves step coverage property of a boron nitride film.SOLUTION: Disclosed is a boron nitride film formation method including (a) a step for executing a sequence. The sequence includes: (a1) a step for supplying a first processing gas containing a first borazine compound and plasma chemical species to a substrate disposed in a chamber of a film formation device, in order to form a boron nitride film on the substrate; and (a2) a step for supplying plasma chemical species to the substrate without supplying the first processing gas to the substrate. The film formation method further includes (b) a step for supplying a second processing gas that contains a second borazine compound containing an alkyl group to the substrate without supplying plasma chemical species to the substrate. The film formation method further includes a step for repeating a cycle including (a) and (b).SELECTED DRAWING: Figure 1

The invention discloses a preparation device and method for in-situ deposition of a DLC film on the inner surface of a metal pipe fitting after ion nitriding, and belongs to the technical field of material processes. The preparation device comprises a first air inlet pipe, a second air inlet pipe, an infrared thermometer, a vacuum chamber, and a mixed air inlet pipe, a direct-current pulse bias power supply, a sample table and a heating piece which are positioned in the vacuum chamber. The device can realize the integrated treatment of glow discharge ion nitriding and plasma chemical vapor deposition DLC film on the inner surface of the metal pipe fitting, effectively improves the binding force and surface hardness of the DLC film, reduces the equipment and operation threshold of the ion nitriding composite coating deposition technology, has the characteristics of simple equipment, low operation difficulty, high treatment efficiency and the like, and is suitable for industrial production. And large-scale industrial production is facilitated.

A matchless RF generator is disclosed that does not require a matching network (or the like) between the RF generator and the plasma. Plasmas have variable inductance or capacitance value during the plasma life cycle. For example, prior to ignition, the plasma chamber may have a first inductance and / or a first capacitance; during ignition, the plasma chamber may have a second inductance and / or a second capacitance; while the plasma is active, the plasma chamber with the plasma may have a third inductance and / or a third capacitance; and during a change in the plasma density, plasma chemistry, plasma brightness, constituent flow rate, plasma voltage, and plasma electric field the plasma chamber with the plasma may have a fourth inductance and / or fourth capacitance.

The invention discloses a low-temperature high-compactness mask and a preparation method thereof. The preparation method comprises the following steps: preparing a first silicon oxide film on the surface of a substrate by adopting an inductively coupled plasma chemical vapor deposition technology; preparing a second silicon oxide thin film on the surface of the first silicon oxide thin film by adopting an inductively coupled plasma chemical vapor deposition technology; coating photoresist on the second silicon dioxide thin film, exposing, developing and hardening; etching the first silicon oxide thin film and the second silicon oxide thin film to expose the substrate, and removing the residual photoresist to prepare a low-temperature high-compactness mask; wherein the radio frequency power for preparing the first silicon oxide thin film and the second silicon oxide thin film is 500W-650W; o2: SiH4 in the preparation of the first silicon oxide film and the preparation of the second silicon oxide film is greater than or equal to 2; the film forming temperature for preparing the first silicon oxide thin film and the second silicon oxide thin film is 130-200 DEG C.

The application discloses a kind of hydrogen-containing gas plasma processing equipment, belong to chemical technology field, including pyrogenic hydrogen and solid carbon processing mechanism, the pyrogenic hydrogen and solid carbon processing mechanism includes first plasma torch, the first plasma chemical reactor is connected to first plasma torch, the first plasma chemical reactor is connected with carbon dioxide separator, the carbon dioxide separator is connected with first gas flow separator.It also includes hydrogen sulfide pyrolysis mechanism, the hydrogen sulfide pyrolysis mechanism includes second plasma torch, the second plasma torch is connected with second plasma chemical reactor, when guide air cylinder or restraint frame is aged, seal cover is removed, and then the restraint frame and guide air cylinder are taken out, replace restraint frame or guide air cylinder, then the new restraint frame and guide air cylinder are reset, and then the seal cover is covered on the shell, to facilitate replacement guide air cylinder or restraint frame.

A matchless RF generator is disclosed that does not require a matching network (or the like) between the RF generator and the plasma. Plasmas have variable inductance or capacitance value during the plasma life cycle. For example, prior to ignition, the plasma chamber may have a first inductance and / or a first capacitance; during ignition, the plasma chamber may have a second inductance and / or a second capacitance; while the plasma is active, the plasma chamber with the plasma may have a third inductance and / or a third capacitance; and during a change in the plasma density, plasma chemistry, plasma brightness, constituent flow rate, plasma voltage, and plasma electric field the plasma chamber with the plasma may have a fourth inductance and / or fourth capacitance.

This application relates to a sliding arc plasma actuator for high-pressure environments, relating to the fields of plasma chemistry and plasma ignition and combustion. The sliding arc plasma actuator for high-pressure environments includes an electrode core stage and an actuator injection section. The electrode core stage includes a high-voltage electrode, which comprises a high-voltage electrode head and a high-voltage electrode rod arranged along its length. One end of the actuator injection section forms a gradually narrowing and widening throat, and this end is connected to an actuator outlet section. An air inlet pipe is arranged inside the outer wall of the actuator injection section, and an oil injection hole is opened in the flared portion of the throat. The high-voltage electrode rod is located in the actuator injection section, and the high-voltage electrode head extends into the flared portion of the throat. The high-voltage electrode is made of a metallic material capable of generating alpha or beta rays. This sliding arc plasma actuator for high-pressure environments has the performance of being suitable for high-pressure environments without changing the power supply breakdown voltage and cable insulation strength.

This invention relates to the field of plasma chemistry and discloses a high-throughput plasma reaction device and a method for decomposing hydrogen sulfide, comprising: an inner cylinder (1) containing reaction tubes (14); an outer cylinder (2) nested outside the inner cylinder (1); a central high-voltage electrode (3); grounding electrodes (4) respectively surrounding or forming sidewalls on the outer walls of each of the reaction tubes (14); a blocking medium (6) disposed on at least a portion of the outer surface of the central high-voltage electrode (3); the ratio between the distance L1 between the outer wall of the blocking medium and the inner wall of the grounding electrode and the length L2 of the discharge region is: L1:L2 = 1:(0.5~6000). The high-throughput plasma reaction device provided by this invention can achieve continuous and stable hydrogen sulfide decomposition process at a significantly higher hydrogen sulfide conversion rate, and the device can achieve long-term operation.

This invention provides a chamber structure for a microwave plasma chemical vapor deposition apparatus that prevents the formation of two strong field regions in the microwave field, thereby avoiding the occurrence of the "double fireball phenomenon." [Solution] A chamber structure for a microwave plasma chemical vapor deposition apparatus, the chamber structure includes a housing 10 and a stage 30, the housing including an inner bottom surface 21, an inner top surface 22 and an inner ring wall surface 23. The inner bottom surface 21 and the inner top surface 22 are spaced apart from each other and face each other, the diameter of the inner bottom surface 21 is larger than the diameter of the inner top surface 22, and the inner top surface 22 protrudes toward the inner bottom surface 21. Both ends of the inner ring wall surface 23 are connected to the inner top surface 22 and the inner bottom surface 21, respectively, so that a chamber 20 is formed between the inner bottom surface 21, the inner top surface 22 and the inner ring wall surface 23, and the microwave field is located in the chamber 20. The stage 30 is provided in the chamber and has a stage surface facing the inner top surface 22.

The invention provides a method and a device for forming a boron nitride film, which can improve the adhesion between a hexagonal boron nitride film and a base region of a substrate. This method for forming a boron nitride film comprises a step (a) in which a first film of amorphous boron nitride is formed on a base region of a substrate. The step (a) includes a step (a1) in which a first processing gas containing a borazine compound and a first plasma chemical species are supplied to the substrate. The film formation method includes a step (b) of forming a second film of hexagonal boron nitride on the first film. The step (b) includes a step (b1) in which a second processing gas containing a borazine compound and a second plasma chemical species are supplied to the substrate.

The application relates to the field of plasma chemistry, and discloses a high-flux low-temperature plasma reactor and a method for decomposing hydrogen sulfide, which comprises the following steps: an inner cylinder (1) containing at least two parallel reaction tubes (14); an outer cylinder (2) nested outside the inner cylinder (1); a central high-voltage electrode (3) arranged in each reaction tube (14) respectively; a grounding electrode (4) formed by solid conductive material; and a blocking medium forming at least part of the side wall of the reaction tube or being arranged around the inner side wall of each reaction tube (14). The aforementioned high-flux low-temperature plasma reactor can be used for plasma decomposition of hydrogen sulfide, and the reactor can generate uniform and efficient dielectric barrier discharge, so that hydrogen sulfide is directly decomposed into hydrogen and sulfur.

Described herein are methods of filling features with tungsten, and related systems and apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods involve selective inhibition along a feature profile. Methods of selectively inhibiting tungsten nucleation can include exposing the feature to a direct or remote plasma. In certain embodiments, the substrate can be biased during selective inhibition. Process parameters including bias power, exposure time, plasma power, process pressure and plasma chemistry can be used to tune the inhibition profile. The methods described herein can be used to fill vertical features, such as in tungsten vias, and horizontal features, such as vertical NAND (VNAND) wordlines. The methods may be used for both conformal fill and bottom-up / inside-out fill. Examples of applications include logic and memory contact fill, DRAM buried wordline fill, vertically integrated memory gate / wordline fill, and 3-D integration using through-silicon vias.

The present invention relates to methods for managing domestic waste, and more particularly to methods for treating waste using a plasma chemical destruction method. The present invention aims to achieve a technical benefit that broadens the scope of technical solutions by providing a method for destroying domestic waste at low temperatures comparable to ambient temperature. This technical benefit is achieved by a destruction method in which domestic waste is fed into a reactor via an input port, and the ingress of atmospheric air into the reactor is restricted. The reactor is provided in the form of an enclosed chamber, the inner surface of which is fully or partially conductive and grounded. Electrodes protrude into the reactor and are isolated from the grounded surface. High-voltage pulses are applied to the electrodes. The pulses cause a corona discharge current to form in the gap between the electrodes and the conductive surface of the reactor.

To provide an apparatus capable of stably performing plasma CVD.SOLUTION: A plasma CVD apparatus includes a plasma head (2) for supplying plasma (p) generated from career gas (g0) and a raw material gas head (3) for supplying raw material gas (gm) for reacting with plasma to perform chemical vapor phase deposition. The plasma head includes: a first electrode (221), middle insulator (212) and second electrode (222) laminated from the upstream side supplying the career gas; a communication hole (20) capable of penetrating the first electrode, middle insulator and second electrode to pass the career gas; and a slender plasma discharge hole (23) on the downstream opening side of the communication hole. The raw material gas head includes a slender raw material gas discharge hole (33) arranged in approximately parallel in the longitudinal direction in the vicinity of the plasma discharge hole.SELECTED DRAWING: Figure 2