593 results about "Plasma chemistry" patented technology

Methods and apparatuses for plasma chemical vapor deposition (CVD). In particular, a plasma CVD apparatus having a cleaning function, has an improved shower plate with holes having a uniform cross-sectional area to yield a high cleaning rate. The shower plate may serve as an electrode, and may have an electrically conductive extension connected to a power source. The shower plate, through which both cleaning gases and reaction source gases flow, may include a hole machined surface area with a size different than conventionally used to ensure a good film thickness uniformity during a deposition process. The size of the hole machined surface area may vary based on the size of a substrate to be processed, or the size of the entire surface of the shower plate.

Plasma etch processes incorporating etch chemistries which include hydrogen. In particular, high density plasma chemical vapor deposition-etch-deposition processes incorporating etch chemistries which include hydrogen that can effectively fill high aspect ratio (typically at least 3:1, for example 6:1, and up to 10:1 or higher), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps while reducing or eliminating chamber loading and redeposition and improving wafer-to-wafer uniformity relative to conventional deposition-etch-deposition processes which do not incorporate hydrogen in their etch chemistries.

A method for fabricating an electrical test apparatus electrical probe tip first provides a probe tip substrate having a topographic surface. A high density plasma chemical vapor deposition (HDP-CVD) deposited mandrel layer is then formed upon the topographic surface. It has a series of pointed tips formed over a series of topographic features within the topographic surface. Finally, a conductor probe tip layer is formed conformally upon the high density plasma chemical vapor deposition (HDP-CVD) deposited mandrel layer and replicating the series of pointed tips. Due to the series of pointed tips and the series of replicated pointed tips, a microelectronic fabrication when tested with the electrical test apparatus electrical probe tip is tested with enhanced accuracy.

A method of making a nanostructure is provided that includes applying a thin, random discontinuous masking layer (105) to a major surface (103) of a substrate (101) by plasma chemical vapor deposition. The substrate (101) can be a polymer, an inorganic material, an alloy, or a solid solution. The masking layer (105) can include the reaction product of plasma chemical vapor deposition using a reactant gas comprising a compound selected from the group consisting of organosilicon compounds, metal alkyls, metal isopropoxides, metal acetylacetonates, and metal halides. Portions (107) of the substrate (101) not protected by the masking layer (105) are then etched away by reactive ion etching to make the nanostructures.

The invention relates to an electroconductive textile material and method of preparation thereof. The method consists mainly of two stages: 1) special pretreatment of the fabric substrate for activation and making it suitable for subsequent application and strong attachment of a conductive coating with the use of a layer-by-layer technique (LBL); 2) subsequent application and strong attachment of a conductive coating by means of a layer-by-layer technique. The first stage may be carried out thermally, thermochemically, by treating in hot solutions, or plasma-chemically by plasma treatment. The pre-treatment may be performed, e.g., for swelling and/or for the formation of unsaturated chemical bonds or uncompensated charges in the fabric material. The pretreatment is needed to ensure more efficient penetration of chemical components into the fabric structure during subsequent LBL applications of treatment solutions that contain nano-particles and that determine the density of the molecular layer. The types and amounts of the nano-particles determine their charge density (solution pH is very important for charge density) in the sublayer. Such a pretreatment increases bonds of the applied layers with the substrate material.

The present invention relates to an apparatus for carrying out a plasma chemical vapor deposition process by which one or more layers of doped or undoped silica can be deposited on the interior of an elongated glass substrate tube. The present invention further relates to a method for manufacturing an optical fiber using such an apparatus.

The invention belongs to the application technical field, such as gas ionization discharge, plasma chemistry and environment engineering, and relates to a method for reutilizing fume while removing sulfur dioxide and nitrogen oxides by adopting the ozone oxidation method. The method comprises the following steps: ozone gas with a concentration of 40 to 240 g/Nm<3> is fed into a reactor or a flue together with fume at 65 DEG C to 250 DEG C with a smoke dust concentration lower than 40 mg/Nm<3>; the ozone simultaneously oxidizes sulfur dioxide, nitrogen oxides and water in the fume and generates micro-fog drops which are collected into a mixed acid solution after being electrically coagulated; and the mixed acid solution is separated and purified into the sulfuric acid and the nitric acid by adopting a chemical method. The method has the advantages that during the process for simultaneously removing the sulfur dioxide and the nitrogen oxides in the fume, no catalyst is used, no absorbent is added, no byproduct is generated, and no any adverse effect on the environment is generated, and provides a reutilization method for the desulfurization and the denitrification of the fume from coal burning.

A system comprises a processing chamber for maintaining a hydrogen plasma at low pressure. The processing chamber has a long, wide, thin geometry to favor deposition of thin-film silicon on sheet substrates over the chamber walls. The sheet substrates are moved through between ends. A pair of opposing radio frequency electrodes above and below the workpieces are electrically driven hard to generate a flat, pancaked plasma cloud in the middle spaces of the processing chamber. A collinear series of gas injector jets pointed slightly up on a silane-jet manifold introduce 100% silane gas at high velocity from the side in order to roll the plasma cloud in a coaxial vortex. A second such silane-jet manifold is placed on the opposite side and pointed slightly down to further help roll the plasma and maintain a narrow band of silane concentration. A silane-concentration monitor observes the relative amplitudes of the spectral signatures of the silane and the hydrogen constituents in the roll-vortex plasma and outputs a process control feedback signal that is used to keep the silane in hydrogen concentration at about 6-7%.

The present invention relates to a method for forming an insulating film with a low relative dielectric constant. A method for forming an insulating film in terms of a plasma chemical vapor deposition, characterized in that a Si supply gas, an oxygen supply gas, and a fluorine supply gas are used a material gas to form said insulating film, and said insulating film is formed under a film forming condition that a density of said insulating film to be formed is equal to or more than 2.25 g/cm3.

A method of making an optical fiber preform includes depositing silica glass on the inside of a tube substrate via a plasma chemical vapor deposition (PCVD) operation. The parameters of the PCVD operation are controlled such that the silica glass deposited on the interior of the tube substrate contains a non-periodic array of voids in a cladding region of the optical fiber preform. The optical fiber preform may be used to produce an optical fiber having a core and a void containing cladding. The core of the optical fiber has a first index of refraction and the cladding has a second index of refraction less than that of the core.

A plasma chemical vapor deposition system includes a chamber provided with gas injection holes, a gas exhaust unit mounted on the chamber, a substrate holder disposed on a central area of the chamber to support a substrate in a state where both sides of the substrate are exposed, and first and second coils generating induced magnetic fields. The first and second coils are disposed around upper and lower outer circumferences of the chamber, respectively.

A plasma catalysis process for preparing H2 by decomposing ammonia at lower temp to obtain the H2-N2 mixture used for the proton exchange membrane type fuel battery of car features that the non-noble-metal carried catalyst, whose active component is chosen from Fe, Co, Ni, Cr, Mo, Mn, Cu and W, is loaded in the discharge region in a plasma catalytic reactor.

A method and an apparatus for plasma-chemical production of nitrogen monoxide is used to produce inhalation gas enriched with nitrogen monoxide for medical purposes. The nitrogen-monoxide production is achieved through the use of a dielectric barrier discharge created in a process gas containing nitrogen and oxygen.

The invention discloses a method for preparing a one-dimensional silicon nanostructure in a anodic aluminum oxide mold, which comprises the following steps: growing the one-dimensional silicon nanostructure in low-temperature by the method of plasma chemical depositing with the spacing limited function of porous aluminium oxide, including the silicon nanowire and silicon nanotube, preparing a porous aluminum oxide mold with honeycomb structure by anodic oxidation process, wherein openings arrange ordered, apertures are coherent and vertical the surfaces of the mold, imbedding the mold into a plasma enhanced chemical depositing reaction chamber, growing the silicon nanowire or silicon nanotube at a temperature of 300 Deg. C by controlling the gas flow with the perhydrous diluting silane as the growth air supply.

Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a purification step is performed on the newly formed nanotube structures. The purification removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The purification is performed with the plasma at the same substrate temperature. For the purification, the hydrogen containing gas added as an additive to the source gas for the plasma chemical deposition is used as the plasma source gas. Because the source gas for the purification plasma is added as an additive to the source gas for the chemical plasma deposition, the grown carbon nanotubes are purified by reacting with the continuous plasma which is sustained in the plasma process chamber. This eliminates the need to purge and evacuate the plasma process chamber as well as to stabilize the pressure with the purification plasma source gas. Accordingly, the growth and the purification may be performed without shutting off the plasma in the plasma process chamber.

The present invention proposes a method for manufacturing an implant, in particular an intraluminal endoprosthesis, having a body such that the body has metallic material. To control the degradation in a desired time window, e.g., between four weeks and six months, the following production method is performed: a) preparing the body of the implant, and b) plasma-chemical treatment of at least a portion of the surface of the body in an aqueous solution by applying a plasma-generating electric alternating voltage to the body (5) of the implant, said voltage having a frequency of at least approximately 1 kHz, to create a first layer. The invention also relates to an implant obtainable by such a method.

A low-temperature preparation method of carbon nanotubes by a chemical vapor deposition method with Ni/MgO as a catalyst comprises the following steps: dissolving nicdel nitrate hexahydrate and magnesium nitrate hexahydrate in ethanol according to different ratios and concentrations to obtain a mixed solution of nicdel nitrate and magnesium nitrate which is used as a catalyst precursor for carbonnanotube growth; spraying the catalyst precursor solution on a substrate such as silicon, glass, and the like, placing the substrate on a sample stage of a chemical vapor deposition system, heating and decomposing to generate nickel oxide and magnesium oxide, introducing hydrogen, performing reduction in hydrogen plasma of the plasma chemical vapor deposition system to generate nickel nanometer metal particles and to obtain a Ni/MgO catalyst system; introducing hydrocarbons, preparing carbon nanotubes for various demands under different process conditions. The advantages of the invention are that the carbon nanotube preparation process is simple, high in yield, and low in synthetic temperature, and the obtained carbon nanotubes have good quality, high purity, uniform tube diameter distribution, and microelectronic process compatibility.

The present invention provides an oxygen evolution electrode material containing FeOOH and a preparation method thereof. The oxygen evolution electrode material containing FeOOH is composed of metal nickel and FeOOH. The preparation method comprises the following steps of: preparing FeOOH by using a chemical precipitation method, a hydrothermal method, an electrodeposition method, a plasma chemical deposition method, a ferrous oxidation method or a forced hydrolysis method; and compounding metal nickel and FeOOH to obtain the oxygen evolution electrode. The invention has the advantages that: FeOOH is used as an oxygen evolution electrode and has excellent performance; FeOOH is inexpensive and widely available; the electrode is easy to prepare, can be prepared by a method for industrial preparation of DSA (dimensionally stable anode), and has strong practicality; and Fe is environmentally-friendly, thus reducing the environmental pollution caused by cobalt oxides.