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Method for preparing one-dimensional nanostructure in anode alumina template

A technology of anodized aluminum and anodic oxidation, which is applied in nanostructure manufacturing, anodic oxidation, chemical instruments and methods, etc., can solve problems affecting the performance test and application of silicon nanowires, wide product diameter distribution, high deposition temperature, etc., and achieve raw material Inexpensive, short time, low synthesis temperature effect

Inactive Publication Date: 2005-09-21
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, most of the current research focuses on the preparation and research of silicon nanowires. The deposition temperature is high (generally 800-1100°C), and metal catalysts need to be introduced to assist the growth. Performance testing and application of silicon nanowires

Method used

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  • Method for preparing one-dimensional nanostructure in anode alumina template
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Examples

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Embodiment 1

[0017] Degrease the 99.999% high-purity aluminum sheet and anneal it at 500°C for 5 hours, and then polish it in a mixed solution of sulfuric acid and phosphoric acid. After polishing, the aluminum sheet is used as the anode, and the graphite is used as the cathode. The first step of anodizing, after anodizing at 30V for 4h, in 1.8wt%H 2 CrO 4 +6wt%H 3 PO 4 The oxide layer was removed by corrosion in the mixed solution for 2 hours, followed by two-step anodic oxidation with the same parameters as the first step to form the pore structure of porous alumina, and finally with saturated CuSO 4 The solution was used to remove unoxidized aluminum, and the pores were expanded in 5% phosphoric acid for 30 minutes to obtain a porous alumina template with a pore diameter of 30 nm.

[0018] Put the 30nm aperture porous alumina template into the plasma-enhanced chemical vapor deposition reaction chamber, and when the temperature rises to 250°C, 20 sccm of SiH 4 / H 2 Mixed gas (SiH 4...

Embodiment 2

[0020] Degrease the 99.999% high-purity aluminum sheet and anneal it at 500°C for 5 hours, and then polish it in a mixed solution of sulfuric acid and phosphoric acid. After polishing, the aluminum sheet is used as the anode, and the graphite is used as the cathode. The first step of anodizing, after anodizing at 50V for 4 hours, corroded in a mixed solution of phosphoric acid and cadmium acid for 2 hours to remove the oxide layer, and then using the same parameters as the first step for two-step anodizing to form a porous aluminum oxide pore structure , and finally with saturated CuSO 4 Unoxidized aluminum was removed from the solution, and the pores were expanded in 5% phosphoric acid for 60 minutes to obtain a porous alumina template with a pore diameter of 100 nm.

[0021] Put the 100m aperture porous alumina template into the plasma-enhanced chemical vapor deposition reaction chamber, raise the temperature to 400°C, and feed 80sccm of SiH 4 / H 2 Mixed gas (SiH 4 with H...

Embodiment 3

[0023] Degrease the 99.999% high-purity aluminum sheet and anneal it at 500°C for 5 hours, and then polish it in a mixed solution of sulfuric acid and phosphoric acid. After polishing, the aluminum sheet is used as the anode, and the graphite is used as the cathode. The first step of anodizing, after anodizing at 40V for 4h, in 1.8wt%H 2 CrO 4 +6wt%H 3 PO 4 The oxide layer was removed by corrosion in the mixed solution for 2 hours, followed by two-step anodic oxidation with the same parameters as the first step to form the pore structure of porous alumina, and finally with saturated CuSO 4 Unoxidized aluminum was removed from the solution, and the pores were expanded in 5% phosphoric acid for 45 minutes to obtain a porous alumina template with a pore diameter of 60 nm.

[0024] Put the 60nm aperture porous alumina template into the plasma-enhanced chemical vapor deposition reaction chamber, and when the temperature rises to 300°C, 40 sccm of SiH 4 / H 2 Mixed gas (SiH 4 w...

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Abstract

The invention discloses a method for preparing a one-dimensional silicon nanostructure in a anodic aluminum oxide mold, which comprises the following steps: growing the one-dimensional silicon nanostructure in low-temperature by the method of plasma chemical depositing with the spacing limited function of porous aluminium oxide, including the silicon nanowire and silicon nanotube, preparing a porous aluminum oxide mold with honeycomb structure by anodic oxidation process, wherein openings arrange ordered, apertures are coherent and vertical the surfaces of the mold, imbedding the mold into a plasma enhanced chemical depositing reaction chamber, growing the silicon nanowire or silicon nanotube at a temperature of 300 Deg. C by controlling the gas flow with the perhydrous diluting silane as the growth air supply.

Description

technical field [0001] The invention relates to a method for preparing a one-dimensional silicon nanostructure in an anodized aluminum template. Specifically, it is a method for growing silicon nanowires and silicon nanotubes at low temperature in a plasma-enhanced chemical vapor deposition reaction chamber by using the regular hole structure of an anodized aluminum template. Background technique [0002] For a long time, silicon, as the most important semiconductor material in the field of microelectronics, has always been the substrate of electronic devices and large-scale integrated circuits, and its process technology and integrated circuit technology have reached a high level of development. However, the information carrier of microelectronics technology is electrons, and the transmission speed of electrons in crystals is limited, which seriously limits the speed and ability of information processing. If the light with the fastest transmission speed can also be used to...

Claims

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Application Information

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IPC IPC(8): B82B3/00C01B33/029C25D11/08C30B25/00C30B29/06C30B29/62
Inventor 王昕韩高荣
Owner ZHEJIANG UNIV
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