The invention relates to a preparation method of a
silicon nanotube array. The preparation method comprises the following steps: providing a
silicon substrate, preparing a
nanotube array pattern on the surface of the
silicon substrate, and carrying out deep
silicon etching by utilizing a Bosh process to form the
silicon nanotube array. Wherein in the process of performing deep
silicon etching by using the Bosh process, the
etching gas is SF6, the
passivation gas is C4F8, and the
flow ratio R of the SF6 to the C4F8 is 0.8-0.9; the
etching power P ranges from 600 W to 800 W; the
etching depth D meets the relational expression that D is in direct proportion to PR / (1 + R2). According to the preparation method of the
silicon nanotube array disclosed by the invention, the
silicon nanotube array of which the side wall roughness is less than 10nm and the depth-to-
width ratio is not less than 20: 1 can be obtained in an atypical parameter interval in the prior art. Moreover, according to the method disclosed by the invention, parameter adjustment is carried out based on a relational expression D < PR / (1 + R2), the method is different from a traditional process regulation and
control mode depending on a trial-and-error method, and proper process parameters can be quickly and accurately found for the preparation process of the silicon
nanotube array with the smooth side wall and the high
aspect ratio.