10 results about "Silicon nanostructures" patented technology

The application discloses a kind of efficient silicon-based water-voltage devices and preparation method thereof, the silicon-based water-voltage device is composed of positive electrode, hole selective transport layer, silicon nanostructure, silicon substrate and negative electrode from top to bottom, the top end part of the silicon nanostructure is embedded in the hole selective transport layer.This application introduces hole selective transport layer in the interface of silicon nanostructure / positive electrode, uses the internal electric field formed by high work function hole selective transport layer in interface to prevent the migration of electron to positive electrode, realizes the selective transport of hole, reduces interface recombination loss to improve charge separation and collection efficiency;At the same time, the hole selective transport layer introduced realizes the transition of silicon nanostructure and positive electrode from point contact to surface contact, reduces the contact resistance of positive electrode interface, further promotes the efficient transport of hole at interface, thereby increases the collection efficiency of electrode to hole, under the synergistic effect of the above, effectively improve the electrical properties of silicon-based water-voltage device.

This invention discloses a continuous silicon nanowire anode material based on ALD seed layer-induced mesoporous confinement and its preparation method. The material comprises a mesoporous carbon framework with interconnected pore structures, and a one-dimensional silicon nanostructure located within the pores and extending continuously along the axial direction. The one-dimensional silicon nanostructure is connected to the inner wall of the mesoporous carbon through an interface modification layer, forming a continuous electron / ion transport pathway. The interface modification layer is formed by in-situ transformation of a metal oxide seed layer deposited on the inner wall of the pores under a silicon source gas and a reducing atmosphere, and its composition includes elemental metals, metal-silicon alloy phases, or metal silicides. Utilizing the spatial confinement effect of the mesoporous carbon, the radial expansion of the silicon nanostructure is restricted within the pores, reducing mechanical compression on the solid electrolyte; simultaneously, during the delithiation shrinkage process, the axial connectivity of the silicon nanostructure is maintained, alleviating solid-solid interface contact degradation, thereby improving the cycle stability and rate performance of the all-solid-state battery.

A method for fabricating a maskless dendritic silicon nanostructure array, in which a copper layer is deposited on a surface of a silicon substrate, and passivated to form an insulating passivation film; a first laser induction is performed using a first laser beam to remove the insulating passivation film from a designated region and form a primary needle-shaped protrusion structure; a second laser induction is performed on the primary needle-shaped protrusion structure using a second laser beam to form a secondary dome-shaped protrusion structure, thereby forming a dual-level needle-shaped seed layer; the dual-level needle-shaped seed layer is subjected to parameter-controlled electrodeposition to grow dendritic microstructures, so as to obtain a silicon wafer containing the maskless dendritic silicon nanostructure array. A silicon wafer with a silicon nanostructure array fabricated by such process is also provided.

This invention relates to catalyst-induced chemical etching. [Solution] A method for fabricating silicon nanostructures. An etching uniformity improvement layer is deposited on a substrate. A catalyst (e.g., a thin film of Ti / Au) is deposited on the substrate or etching uniformity improvement layer, and the catalyst comes into contact with a portion of the substrate or etching uniformity layer. The catalyst and the substrate or etching uniformity improvement layer are exposed to an etchant, and the catalyst causes etching of the substrate, thereby creating an etched nanostructure.

Described herein are antireflective materials and methods of making antireflective materials. The material can include a plurality of hierarchical nanostructures on a base substrate and a total specular reflection of less than 3% at a wavelength of about 400nm to about 1100 nm. The material can have an etched polyimide layer disposed on the superior surface of the hierarchical nanostructures. The materials can also have superhydrophobic characteristics.

The invention relates to the technical field of metasurface sensing, in particular to a hollow near-infrared metasurface sensor and a detection method thereof.The hollow near-infrared metasurface sensor comprises a quartz substrate and hollow silicon nanostructures arranged on the quartz substrate in a periodic array mode; the hollow silicon nanostructure is provided with a rectangular hollow area, and the center of the rectangular hollow area does not coincide with the center of the hollow silicon nanostructure, so that the hollow silicon nanostructure forms an asymmetric structure to excite Fano resonance for sensing in a near-infrared band. The invention has the advantages that the limitation of the traditional single-parameter sensor is broken through, the double-parameter sensing of the refractive index and the temperature is realized, the application potential in the fields of polarized light switches and the like is shown, and the practical application scene is greatly expanded.

The invention relates to a preparation method and application of a composite silicon nanostructure catalyst based on silicon sludge, and belongs to the technical field of optical / photoelectric catalysts. The method comprises the following steps: sequentially carrying out acid leaching impurity removal and high-temperature purification treatment on the photovoltaic cutting silicon waste (silicon sludge) to obtain high-purity silicon powder; a porous nanostructure is constructed on the surface of silicon powder and metal oxide (such as Cu2O) nanoparticles are loaded through a metal-assisted chemical etching method for accurately controlling metal ion deposition and etching processes; a nickel sulfide (NiS) cocatalyst is selectively loaded on the composite silicon nanostructure by adopting a hydrothermal method to form the catalyst with a heterojunction structure. According to the invention, the silicon sludge is co-loaded with cuprous oxide and nickel sulfide for the first time, and the prepared composite silicon-based photocatalytic material has broad spectrum absorption, efficient charge separation capacity and high hydrogen evolution performance, and shows high hydrogen evolution amount of 51.4 mmol g <-1 >, average hydrogen evolution rate of 8.57 mmol g <-1 > h <-1 > in 6 hours and apparent quantum efficiency of 31% in visible light induced photocatalytic water decomposition hydrogen evolution reaction.

To provide a composite of nanocarbons and a silicon nanostructure, the silicon nanostructure including a structure combining a porous structure and silicon nanowires and a structure in which the silicon nanowires are bonded on a porous layer, the composite capable of inhibiting expansion and preventing electrical loss, as well as being a powder and having a high capacity.SOLUTION: A composite consists of a silicon nanostructure 1 and nanocarbons. The silicon nanostructure 1 includes a silicon porous layer 2 having a plurality of first pores 4 and one or more porous silicon nanowires 3 having a plurality of second pores 6 continuously coupled to the silicon porous layer 2.SELECTED DRAWING: Figure 12

The invention discloses a silicon nanostructure preparation method and system based on metal-assisted chemical etching, and the method achieves the controllable preparation of an inclined nanobelt and a vertical nanowire on a low-doped p-type (100) silicon substrate at room temperature through the regulation and control of the volume ratio R of hydrofluoric acid to a hydrogen peroxide solution. The method comprises the following specific steps: pretreating a silicon substrate and preparing a micron-sized metal mask; preparing HF-HO etching solutions with different volume ratios; carrying out metal auxiliary chemical etching; the product is characterized through SEM, TEM and EDS. The invention discloses a correlation mechanism of the etching liquid components and the morphology of the silicon nanostructure, the accurate regulation and control of the inclination angle in the range of 8.6-78 degrees can be realized by adjusting the volume ratio R, the limitation that the traditional MACE technology needs high temperature to prepare the inclined silicon structure is solved, the cost is low, the operation is simple and convenient, the controllability of the morphology of the product is strong, and the method is suitable for industrial production. The method is suitable for preparing silicon nanostructures in the fields of photovoltaic, thermoelectric and optoelectronic devices and the like.

This invention relates to the field of optoelectronic materials and photodetectors, providing a plasmon-enhanced silicon-based near-infrared photodetector material, its preparation method, and its applications. The invention constructs a silicon nanostructure array on a silicon substrate and deposits a metal layer on the surface of the silicon nanostructure array. The metal layer is formed by dispersed metal nanoparticles or metal nanoclusters. The metal layer and the silicon nanostructure array form a Schottky barrier, achieving interfacial barrier modulation and directional separation of charge carriers, significantly suppressing recombination and reducing dark current noise. Simultaneously, the localized surface plasmons generated by the metal nanoparticles or metal nanoclusters significantly enhance near-field light intensity and promote the effective separation and injection of hot electrons or photogenerated charge carriers, thereby improving the interfacial photoelectric conversion efficiency. The efficient light-trapping structure of the silicon nanostructure array further enhances its broad-spectrum absorption capability. The photodetector material provided by this invention exhibits high responsivity, low noise, and excellent photoelectric conversion performance.