Method for preparing silicon nanostructured material

Abstract

The invention discloses a method for preparing a silicon nanostructured material, belonging to the field of new materials and nano materials. According to the method, dissolved oxygen in hydrofluoric acid solution is adopted as an oxidizing agent, a silicon nanostructure is etched on the surface of a silicon wafer through a primary battery corrosion technology, so that controllable preparation of various shapes of silicon nanostructured materials can be realized. The silicon nanostructured material prepared by the method can be used as excellent solar battery and photocatalysis materials, thermoelectric material and lithium ion battery cathode material, and has wide application prospect and practical value. The method has simple technologies, has low cost, and is convenient for large scale production.

Description

technical field

[0001] The invention relates to a method for preparing a silicon nanostructure material, which belongs to the field of new materials and nanometer materials. Background technique

[0002] Due to its unique microstructure and singular physical and chemical properties such as light, electricity and heat, silicon nanostructure materials have attractive application prospects in the fields of solar cells, thermoelectric devices, lithium-ion batteries and photocatalysis. One of the important research hotspots in the field of materials. There are many methods for preparing silicon nanostructure materials, and the commonly used methods are gas-liquid-solid and oxide-assisted growth methods. However, due to the limitations of the growth mechanism, methods such as gas-liquid-solid and oxide-assisted growth require high temperatures and complex equipment, the preparation efficiency of silicon nanostructure materials is very low and the cost is high. The recently propo...

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