378 results about "Hydrofluoric acid" patented technology

The utility model discloses a bitter apricot kernel wastewater treatment device which comprises an equipment shell, a water inlet pipe and a water outlet pipe are respectively arranged on the equipment shell, and a wastewater treatment assembly communicated with the water inlet pipe and the water outlet pipe is arranged in the equipment shell; the wastewater treatment assembly comprises a plurality of groups of apricot shell adsorption tanks which are connected in series, apricot shells are filled in the apricot shell adsorption tanks and are used as adsorbents, the apricot shells adsorbing hydrocyanic acid are subjected to carbonization treatment, and the hydrocyanic acid is destroyed in the carbonization treatment process and forms a part of pyroligneous liquor; the hydrofluoric acid on-line detector is arranged at the downstream of the apricot shell adsorption tank and is used for detecting the content of hydrofluoric acid in the treated wastewater; the control valve group is connected to the water inlet pipelines and the water outlet pipelines of the apricot shell adsorption tanks and is used for controlling the working states of the multiple groups of apricot shell adsorption tanks. The device is efficient in use, easy to operate, low in maintenance cost, safe and reliable, hydrofluoric acid is eliminated in the carbonization process, waste water is recycled, and water resources are saved.

The invention discloses a lithium ion capacitor negative electrode based on an MXene carbon nanotube composite material and a preparation method thereof, and the main points of the technical scheme are that the lithium ion capacitor negative electrode based on the MXene carbon nanotube composite material is composed of an MXene sheet layer, a hydroxyl modified carbon nanotube and a binder; the MXene sheet layer is Ti3C2Tx, the interlayer spacing is 1.0-1.3 nm after the MXene sheet layer is etched by hydrofluoric acid, and the content of-OH functional groups on the surface accounts for 40-60% of the total functional groups; the diameter of the hydroxyl-modified carbon nanotube is 10 to 30 nm, the length of the hydroxyl-modified carbon nanotube is 500 to 2000 nm, and the hydroxyl modification degree of the hydroxyl-modified carbon nanotube is 2.5 to 4.0 mmol / g; the mass ratio of the MXene sheet layer to the hydroxyl modified carbon nanotube is 7: 3-8: 2, and the MXene sheet layer and the hydroxyl modified carbon nanotube are combined through hydrogen bonds to form a layered porous structure.

The invention discloses a rinsing process for deep cleaning of purified natural quartz, which comprises the following steps: putting acid-washed quartz sand into a cleaning medium tank containing a mixed cleaning solution of deionized water and absolute ethyl alcohol for cleaning, and applying ultrasonic waves in the cleaning process; the cleaned quartz sand is put into a cleaning medium tank containing a mixed cleaning solution composed of deionized water, hydrogen peroxide and hydrofluoric acid to be cleaned, and ultrasonic waves are applied in the cleaning process; and the cleaned quartz sand is put into a cleaning medium tank containing deionized water to be rinsed so as to remove acid pickling residues to achieve deep cleaning, and ultrasonic waves are applied in the cleaning process. According to the method, a three-step cleaning scheme is innovatively adopted, so that loose impurities on the surfaces of quartz sand particles and organic reagent residues of a flotation process are efficiently stripped; the three steps are clear in function and have a synergistic effect, and the cleaning effect is far better than that of traditional single washing.

The application relates to the technical field of lithium ion battery materials, and discloses a low-expansion silicon-carbon material and a preparation method thereof. The low-expansion silicon-carbon material has a porous core-shell structure, the inner core is graphene / metal-doped amorphous carbon-coated nano silicon, and the shell is boron-doped amorphous carbon. The preparation method comprises the following steps: firstly, a silicon oxide compound, a graphene oxide solution and an organic metal polymer are added into an organic carbon source solution, spray drying is carried out, and an oxidized graphene-coated metal-doped silicon oxide precursor material is obtained through reaction; secondly, a mixed gas of a boron source gas and argon is introduced into the oxidized graphene-coated metal-doped silicon oxide precursor material, and a boron-doped silicon-carbon composite material is obtained through reaction; and thirdly, the boron-doped silicon-carbon composite material is soaked in a hydrofluoric acid solution, and the low-expansion silicon-carbon material is obtained after drying. Through the technical scheme, the problems of high expansion and poor rate performance of the silicon-carbon material in the related art are solved.

The invention relates to the technical field of semiconductor cleaning agents, and particularly discloses an etching solution for SiC surface silicon and a preparation method of the etching solution. The etching solution for SiC surface silicon comprises an aqueous solution of a component A and an aqueous solution of a component B. The component A comprises the following raw materials in parts by weight: 3-8 parts of nitric acid, 1-2 parts of hydrofluoric acid, 0.5-1 part of a complexing agent and 0.1-1 part of a surfactant; the raw materials of the component B comprise modified citric acid and citric acid in a mass ratio of (2.2-5.7): (1-1.8), and the modified citric acid is obtained by modifying a dihydroxy compound. The etching solution for the SiC surface silicon has higher selectivity on the SiC substrate surface silicon and other impurities, the etching effect and the etching rate of the etching solution on the SiC surface silicon are effectively improved, the loss of the SiC substrate is reduced, and the problem of environmental pollution is also reduced.

The invention belongs to the technical field of battery electrolyte, and particularly relates to flame-retardant cyclic phosphamide eutectic electrolyte as well as a preparation method and application thereof. According to the invention, through reasonable molecular design, the flame-retardant cyclic phosphamide eutectic electrolyte is obtained. Through the design of the annular structure, a film is formed on the positive and negative electrode interface of the electrode in the battery operation process, so that the stability of the battery is improved. Phosphamide groups are introduced into the cyclic structure, hydroxyl radicals generated in the battery operation process are captured through phosphorus-oxygen bonds, and the chain reaction of combustion is blocked. Meanwhile, different designs of amino groups on phosphamide can achieve a self-cleaning effect, hydrofluoric acid and water generated in a battery circulation process are removed, and the battery is protected from electrode structure collapse caused by the hydrofluoric acid and the water in an operation process. The safety performance of the lithium battery in the cycle process is obviously improved, and the development of the lithium battery with high safety and stable operation is effectively promoted. The preparation process is simple, safe to operate, high in purity and suitable for industrialization.

The invention provides a purification method and application of a coal-based hard carbon material, belongs to the technical field of lithium / sodium ion battery negative electrode materials, and overcomes the defects that according to an existing purification method, the ash content is lower than 3%, the iron content is lower than 400 ppm, and the requirements are difficult to meet. Turning over the materials and reacting for 3.8-4.2 hours in a boiling state; acidizing: mixing an acid solution, and reacting for 2-8 hours at the temperature of 60-100 DEG C; the mixed acid solution comprises hydrochloric acid with the volume concentration of 10%-30% and hydrofluoric acid with the volume concentration of 0.5%-8%; according to the high-purity coal-based hard carbon material and the preparation method thereof, purification and deep impurity removal can be cooperated, the original coal ash content higher than 8% can be reduced to lower than 1%, and the iron content of the high-purity coal-based hard carbon material is lower than 100 ppm.

The invention relates to the technical field of material detection, and particularly discloses a method for determining content distribution of impurity elements in gradient depth of a surface layer of a quartz glass product. The method comprises the following steps: (1) putting a sample into a corrosion-resistant container in a clean environment; (2) adding 5-20wt% of hydrofluoric acid solution for etching, and collecting an extraction solution; (3) evaporating a part of the extraction solution to dryness, and adding 1-3wt% of nitric acid to dissolve residues; (4) measuring the concentration of impurity elements; (5) diluting the leaching solution, and then measuring the concentration of the silicon element; (6) performing a blank experiment; (7) calculating the etching quality and depth according to a formula; and (8) calculating the content of impurity elements in combination with the etching quality. According to the method, layer-by-layer analysis of the surface layer of the quartz glass at different depths in a range from submicron to tens of microns is realized, and the enrichment layer or diffusion gradient of impurity elements can be clearly and intuitively revealed.

A technique enabling wet etching of a first silicon oxide film with high selectivity with respect to a metal film and a second silicon oxide film is provided. A substrate processing method of wet-etching a substrate having a stacked structure including a metal film, a first silicon oxide film, and a second silicon oxide film having a moisture content lower than that of the first silicon oxide film is provided. The substrate processing method includes performing an etching while increasing etching selectivity of the first silicon oxide film with respect to the second silicon oxide film and the metal film by supplying an etching liquid, which is prepared by diluting sulfuric acid, hydrogen peroxide and hydrofluoric acid in an anhydrous organic solvent, to the substrate such that the metal film, the first silicon oxide film, and the second silicon oxide film are simultaneously exposed to the etching liquid.

The invention belongs to the field of fine chemicals and glass storage, and particularly relates to composite acid, a preparation method and a method for cleaning glass rainbow spots through the composite acid. The preparation method comprises the following steps: sequentially adding 3-5% of acetic acid, 0.1-0.2% of fatty alcohol-polyoxyethylene ether, 0.3-0.5% of disodium ethylene diamine tetraacetate, 0.5-1.5% of hydrofluoric acid, 1.5-3% of concentrated sulfuric acid and the balance of water to a proper amount of water, and uniformly mixing to obtain a composite acid; the method comprises the following steps: completely immersing glass with rainbow spots in a thermal composite acid solution, taking out the glass, cleaning the glass until no composite acid solution is left, adding calcium carbonate into waste liquid after cleaning is completed, and discharging the waste liquid after the pH value of the waste liquid is qualified. The glass cleaning agent has an efficient and comprehensive decontamination effect on glass rainbow spots, impurity ions difficult to remove are not introduced, and cleaned glass is high in light transmittance, low in haze and small in damage to a glass body.

This invention relates to the field of glass surface treatment technology and discloses a novel AG glass preparation method based on nano-island masks. The method includes glass substrate pretreatment, PVD coating to form nano-islands, hydrofluoric acid etching, mask removal, and post-treatment. Specifically, it includes the following steps: Step 1: Glass substrate pretreatment: Clean the glass substrate to remove surface grease and contaminants; Step 2: PVD coating to form nano-islands: Place the glass substrate in a vacuum environment and use physical vapor deposition (PVD) to form uniformly distributed nano-islands on the surface of the pretreated glass substrate. The nano-islands have a size of 50-100 nanometers and a spacing of 200-500 nanometers. This novel AG glass preparation method based on nano-island masks uses nano-islands as the mask material, replacing the organic masks or random particle masks used in traditional processes. The nano-islands form a CrF₃ passivation layer in hydrofluoric acid, exhibiting higher corrosion resistance and stability, and ensuring precise control of the etching process.

The invention relates to the technical field of cerium-containing ultra-thin glass processing, in particular to a medicament for strengthening and thinning a cerium-containing ultra-thin glass cover plate and a preparation process thereof, which are used for solving the problems that the roughness is easy to increase and the surface smoothness does not reach the standard in the process of directly etching glass by traditional hydrofluoric acid, and if no strengthened glass cover plate exists, the glass cover plate cannot be thinned. The bending strength of the glass is obviously reduced, and the requirement on the bending strength cannot be met; meanwhile, hydrofluoric acid also causes direct contact harm to operators; the etching agent and the carbonization agent are used as agents to treat the cerium-containing ultra-thin glass cover plate, the etching agent can be used for etching and thinning the cerium-containing ultra-thin glass cover plate, the etching agent can react with fluoride to form a protective crystal nucleus layer, and the protective crystal nucleus layer is attached to the surface of the glass to form a protective layer; the bending performance of the cerium-containing ultra-thin glass cover plate is greatly improved, the protective layer can be thickened and strengthened through the coating formed by the carbonization agent, and the bending performance of the cerium-containing ultra-thin glass cover plate is further improved.

The invention discloses a boron-doped porous silicon-carbon composite material and a preparation method thereof.The preparation method comprises the following steps that S1, silicon dioxide, a solid carbon source and boron-containing particles are subjected to high-energy ball milling, and a mixed product A is obtained; s2, mechanically mixing the mixed product A with magnesium powder to obtain a mixed product B; s3, putting the mixed product B into a reactor, roasting for 6-9 hours at 600-1000 DEG C under an inert condition, and naturally cooling to obtain a mixed product C; and S4, sequentially carrying out acid pickling on the mixture C in dilute acid and hydrofluoric acid, then cleaning with pure water and absolute ethyl alcohol, and carrying out centrifugal drying to obtain the boron-doped porous silicon-carbon composite material. The method is simple in process and low in raw material cost, and the prepared boron-doped porous silicon-carbon composite material is high in conductivity and good in cycling stability.

The application discloses a sealing method of an ultra-thick high-low frequency metal shell, which comprises the following steps: pre-oxidation and pre-plating of raw materials, cleaning of a mold; pre-oxidation and pre-plating of the raw materials to obtain a shell, a lead wire and glass; a section of glass is assembled with the shell and the lead wire, a graphite column is sleeved on the lead wire to press the glass, and the whole is placed in a selected atmosphere to perform first sealing at 800-1200 DEG C. After the first sealing, the mold and the graphite column are removed, the sealed metal shell is treated in diluted hydrofluoric acid for dozens of seconds, a second section of glass is assembled, and the assembled shell is placed at 800-1200 DEG C to perform second sealing. The plating mode of the high-low frequency metal shell is gold plating, copper plating, nickel plating or the like. The application uses step-by-step sealing to replace conventional one-step sealing, and meets the use requirements of high insulation and voltage resistance of the metal shell; and provides technical support for mass production of other types of ultra-thick metal shells.

The invention discloses a method for detecting trace acid-insoluble substances in raw material silicon powder for polycrystalline silicon, and belongs to the technical field of detection of trace acid-insoluble substances in industrial silicon powder, and the method comprises the following steps: placing the whole crucible in a hydrochloric acid solution, and heating and pickling; washing the crucible, placing the crucible on a suction filtration device, and performing suction filtration with high-purity water; the crucible is placed in an electric heating constant-temperature drying box to be dried, and then cooling and weighing are conducted; adding an industrial silicon powder sample into a beaker, and slowly dropwise adding mixed acid of hydrofluoric acid and nitric acid along the wall of the beaker; placing the beaker on a heating plate, heating until the liquid is completely volatilized, and adding a hydrochloric acid solution to completely dissolve the solid salt; transferring the sample into a container, diluting the sample with hot water, and carrying out suction filtration on the sample in a crucible subjected to acid pickling treatment while the sample is hot; and placing the crucible in an electrothermal constant temperature drying box for drying, then placing the crucible in a dryer for cooling to room temperature, and weighing. The method can solve the problem that the trace acid-insoluble substances in the industrial silicon powder cannot be accurately detected, and can be used for detecting the trace acid-insoluble substances in the industrial silicon powder when the trace acid-insoluble substances in the industrial silicon powder are lower than 0.2%.

A method for manufacturing a glass article includes etching a surface of the glass article with an etchant solution including hydrofluoric acid to produce an etched glass article. The glass article is a high refractive index glass containing a transition metal oxide and having a refractive index of greater than or equal to about 1.6 at a wavelength of 589.3 nm. The surface has surface and subsurface defects. The etching improves the surface strength of the surface of the etched glass article by removing or rounding the surface and subsurface defects, and the etching results in deposition of transition metal fluoride. The method includes cleaning the surface of the etched glass article with a cleaning solution having a pH greater than or equal to about 10 to remove transition metal fluoride from the surface of the etched glass article.

The application discloses a cavity surface coating method for a non-airtight packaged semiconductor laser, and is suitable for the technical field of semiconductor lasers. The film system structure obtained by the cavity surface coating method for the non-airtight packaged semiconductor laser has a SiN film layer stress of only 100 Mpa, which is 14 times lower than that of the existing SiN film layer, and a corrosion resistance to hydrofluoric acid solution which is 12 times slower than that of the SiN grown by PECVD. The stress defects are released, and the compactness is further enhanced on the basis of the original compactness. The refractive index of the material in the near-infrared waveband is about 2.0, which meets the requirement of the theoretical parameter of the optical thin film design of the laser, and the SiN film layer is compact, well matched with the bar strip lattice, low in defect density, small in stress, firmly combined with the bar strip cleavage surface, and can effectively prevent the external water and oxygen from penetrating the contact cleavage surface, so that the stability of the laser in the high-temperature and high-humidity environment is ensured.

The invention relates to an etching solution for etching a composite layer coated on PET and a preparation method thereof, the etching solution comprises the following preparation raw materials by weight: 20-36% of hydrofluoric acid, 5-15% of an organic chelating agent, 3-5% of a surfactant, 2-4% of a modified nano system, and the balance of water; the organic chelating agent comprises organic acid and N-[3-(dimethylamino) propyl] octadecanamide. The etching solution has the effect of improving the etching stability of the etching solution.

The application provides an Ag etching solution, a preparation method and application thereof. The Ag etching solution comprises the following components in a weight ratio: 40-80 parts of inorganic acid; 10-50 parts of organic acid; 0.05-1.5 parts of corrosion inhibitor; 0.1-2 parts of chelating agent; 1-7.5 parts of buffer; and 30-50 parts of ultrapure water. The application further discloses a preparation method of the Ag etching solution and application thereof in the field of etching ITO-Ag-ITO composite layers. The inorganic acid is selected from one or more of phosphoric acid, sulfuric acid, carbonic acid, boric acid, hydrobromic acid, iodic acid, hypoiodous acid, hydrofluoric acid and nitric acid. The inorganic acid is preferably phosphoric acid and nitric acid. The Ag etching solution has a stable etching rate for ITO-Ag-ITO, and is not damaged to the insulating layer and photoresist, and can be used in the OLED pixel electrode manufacturing process, and the Ag layer is not provided with burrs and is not shrunk after etching.

The invention relates to the technical field of photovoltaic waste silicon regeneration, in particular to a preparation method of a pre-magnesium-silicon-oxygen negative electrode material based on photovoltaic waste silicon recycling, which comprises the following steps: obtaining waste silicon materials from different sources, and immersing the waste silicon materials with the purity of 80-96% into an alkaline solution of a dehydrogenation additive to obtain a pure silicon wafer; soaking the pure silicon wafer in a hydrofluoric acid solution, adding a sodium hydroxide solution, soaking the common-purity silicon wafer in aqua regia, filtering the solution, and locally melting a silicon rod by adopting high-frequency induction heating to obtain high-purity silicon powder with the purity of 99.9999%; the mixture is added into a vacuum furnace to be heated, silicon monoxide steam and magnesium steam are obtained, and SiO / alpha Mg is obtained through condensation; and adding the SiO / alpha Mg material into a CVD (Chemical Vapor Deposition) furnace to obtain the Mg-SiOx-C composite material. According to the photovoltaic waste silicon disclosed by the invention, the pollution of the photovoltaic waste silicon to the environment is avoided, the secondary pollution easily caused by an immature recovery technology is avoided, the recovery cost is effectively reduced, and the utilization of the photovoltaic waste silicon is improved.

The application discloses a resourceful treatment method of crystalline silicon solar cell pieces, which comprises the following steps: soaking the crystalline silicon solar cell pieces in a first treatment liquid to remove the metal layer on the surface of the crystalline silicon solar cell pieces, and obtaining first-stage cell pieces and a first recovery liquid; soaking the first-stage cell pieces in a second treatment liquid to remove the passivation layer and the emitter layer on the surface of the first-stage cell pieces, and obtaining second-stage cell pieces; the second treatment liquid is a mixed acid with a concentration of 26% to 33% of nitric acid and a concentration of 3% to 5% of hydrofluoric acid; and soaking the second-stage cell pieces in a third treatment liquid to remove the metal impurities on the surface of the second-stage cell pieces and recover the silicon in the crystalline silicon solar cell pieces. The resourceful treatment method has the advantages of simple process, short time consumption, low resourceful treatment cost and high recovery rate of elements such as silicon.

The application discloses a crystal silicon anisotropic etching method, belongs to the technical field of new materials, and can be used for preparing a micro-nano scale pyramid structure on a crystal silicon surface. The method is simple and easy to implement, does not need to add a strong oxidant such as hydrogen peroxide or copper ions in a hydrofluoric acid etching solution, has low cost, and the prepared large-area micro-nano scale pyramid suede has the same pyramid suede structure as that generated by industrial alkali etching and has excellent light absorption performance.

The invention discloses a manufacturing method of a high-power photovoltaic module, and aims to solve the technical problems that specular reflection on the lower surface of glass of an existing crystalline silicon photovoltaic module causes light loss, the utilization rate of ultraviolet light is low, and aging of a packaging adhesive film is easily accelerated. The method comprises the following steps: firstly, carrying out hydrofluoric acid etching or micron-order fusion embossing treatment on the lower surface of photovoltaic front glass to form a concave-convex light trapping structure so as to reduce mirror reflection of incident light; the upper surface of the glass is coated with a polyfluorene down-conversion material layer with the thickness of 50-100 nm, and ultraviolet light is converted into high-responsivity blue light. Subsequent procedures of cell scribing, multi-main-grid series welding, POE adhesive film lamination, EL and appearance detection, vacuum lamination, trimming and framing and the like are carried out to complete assembly preparation. Tests show that in a 66-version assembly, only the lower surface of the glass is treated, so that the power can be improved by 2.1 W compared with that of a traditional process, the power is improved by 5.8 W after the lower conversion film layer is overlaid, meanwhile, the aging effect of ultraviolet light on the adhesive film is weakened, the service life of the assembly is prolonged, and the process is compatible with an existing production line and has remarkable industrial application value.

This invention relates to the field of battery separator materials technology, specifically to MXene-functionalized aramid paper-based battery separators, their preparation methods, and applications. Meta-aramid paper is prepared by wet papermaking using short-cut meta-aramid fibers and precipitated fibers. MXene nanosheets are prepared by hydrofluoric acid etching. Using the meta-aramid paper as a substrate, a functional coating is constructed on the surface of the aramid paper by loading a mixture of para-aramid nanofibers and MXene through a vacuum-assisted filtration-layer-by-layer self-assembly method. The resulting functionalized separator is obtained through protonation reduction. The separator, with its three-dimensional porous protective layer constructed from para-aramid nanofibers and MXene, combines physical barrier and chemical bonding, effectively inhibiting polysulfide shuttle. Furthermore, the highly active sites of MXene can activate inert sulfur-containing substances, improving sulfur utilization. When used in assembling lithium-sulfur batteries, the separator achieves an initial discharge capacity of 1244 mAh·g at a constant current density. ‑1 The capacity retention rate is 82% after 200 cycles.

The invention provides a mineral separation and purification method of microcrystalline graphite, a negative electrode material and a battery, the mineral separation and purification method of microcrystalline graphite comprises the following steps: adding an acid solution into a crushed and shaped product in stages by adopting a staged acid purification process, and regulating and controlling the temperature to finally obtain a microcrystalline graphite product; wherein the staged acid method purification process comprises three stages, namely a first acid solution, a second acid solution and a third acid solution are adopted, and different temperatures are regulated and controlled to treat the crushed and shaped microcrystalline graphite product in sequence; the first acid liquor is a mixture of hydrofluoric acid and pure water; the second acid liquor is a mixture of hydrochloric acid, nitric acid and pure water; the third acid liquor is a mixture of hydrochloric acid and pure water. According to the technical scheme, the use amount of hydrofluoric acid is reduced, the use amount of concentrated hydrochloric acid and concentrated nitric acid is reduced, the production cost is reduced, meanwhile, the loss of equipment is reduced, and the method has the advantages of being high in purification efficiency, low in energy consumption, small in environmental pollution, environmentally friendly and the like.

The invention belongs to the technical field of new energy battery recovery processing, and discloses a waste lithium ion battery full-component recovery processing method. The treatment method comprises the following steps: carrying out discharging and shell cutting treatment on the waste lithium ion battery to obtain a battery cell, and carrying out soaking treatment on the battery cell by adopting a leaching solvent to obtain a leaching solution and the battery cell without an electrolyte; carrying out reduced-pressure step-by-step distillation on the leachate for component separation, and recovering to obtain a solvent component and a lithium salt component; and disassembling the battery cell from which the electrolyte is removed into a positive pole piece, a negative pole piece and a diaphragm, and performing powder removal treatment on the positive pole piece and the negative pole piece respectively by adopting an eluent to obtain a positive current collector, a negative current collector, positive powder and negative powder. According to the method, the electrolyte in the battery cell is leached out by adopting the specific leaching solvent, so that the harm of hydrofluoric acid, an organic solvent and the like formed by the residual electrolyte to a human body and the environment in the subsequent fine disassembly process of the battery cell is avoided, and the full-component recovery of the waste retired battery is realized.

The invention relates to the technical field of quartz glass processing, in particular to a method for preparing a gold infrared reflecting layer on a quartz glass product, which comprises the following steps: S1, cleaning: cleaning the quartz glass product; s2, pre-treating: pre-treating the cleaned quartz glass product in a hydrofluoric acid solution for a certain time, and washing the quartz glass product after the pre-treatment is finished; s3, coating: uniformly coating the surface of the quartz glass product with the prepared gold coating, and drying to form a gold infrared reflecting layer on the surface of the quartz glass product; and S4, performing high-temperature heat treatment, namely performing high-temperature heat treatment on the dried quartz glass product at 950-1100 DEG C in an atmospheric environment. By optimizing the pretreatment process, the coating formula and the heat treatment process, the defects in the prior art are effectively overcome, high infrared reflectivity, strong binding force and excellent corrosion resistance are considered, metal impurity pollution is avoided, the process is simple and efficient, and the coating has wide application prospects in the high-end fields of semiconductors, aerospace and the like.

The present disclosure relates to the technical field of sodium ion battery negative electrode materials, in particular to a preparation and purification process of a biomass hard carbon material for sodium ion battery negative electrodes and application. The preparation and purification process comprises the following steps: providing biomass carbonization material, preparing a first mixed acid solution comprising nitric acid, hydrochloric acid and hydrofluoric acid, and performing first acid washing; then preparing a second mixed acid solution comprising organic acid, chelating agent and surfactant; performing second acid washing; then performing a ball milling process together with the second mixed acid solution; and finally calcining under a nitrogen atmosphere to obtain a biomass hard carbon material for sodium ion battery negative electrodes.

A substrate processing method according to one embodiment of the present invention includes a first etching step of etching a work function adjustment film by supplying a first etching liquid to a substrate on which a gate electrode and the work function adjustment film for adjusting the work function of the gate electrode are formed. In the first etching step, hydrofluoric acid, SPM (a mixed solution of sulfuric acid and an aqueous hydrogen peroxide solution) or SC1 (a mixed solution of ammonia and an aqueous hydrogen peroxide solution) are supplied to the substrate as a first etching solution.

The invention discloses a preparation method of an MXene modified TiO2 / Cd0. 3Zn0. 7S heterojunction composite photocatalyst for hydrogen production through visible light photolysis of water. The MXene modified TiO2 / Cd0. 3Zn0. 7S heterojunction composite photocatalyst is used for hydrogen production through visible light photolysis of water. The preparation method comprises the following steps: etching an MAX phase (Ti3AlC2) by hydrofluoric acid to prepare Ti3C2 MXene, growing TiO2 nanosheets in situ by utilizing a hydrothermal oxidation technology, anchoring the TiO2 nanosheets on the surface of the Ti3C2 MXene to form a Ti3C2-coated TiO2 composite material, and heating and loading Cd0. 3Zn0. 7S nanoparticles in an oil bath to prepare the final composite photocatalyst. The preparation method is simple, mild in condition and low in cost, and a surfactant or a template agent does not need to be added. The prepared composite photocatalyst has excellent photocatalytic water decomposition hydrogen production performance, the hydrogen evolution rate reaches up to 48.92 mmol.g <-1 >. H <-1 > and is improved by 43.67 times and 99.83 times respectively compared with pure Cd0. 3Zn0. 7S and Ti3C2 at TiO2, the cycling stability is good, the activity is kept at 95% or above after four times of cycling, and the apparent quantum efficiency at 420 nm reaches 74.6%. The invention provides a new thought for a high-efficiency photocatalytic system, and is suitable for the fields of solar energy conversion and environment purification.