Process for synthesizing nano linear carbon array

A nano-silicon wire and array technology is applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., to achieve the effect of reducing costs and simple preparation conditions

Inactive Publication Date: 2002-12-04
TSINGHUA UNIV
View PDF1 Cites 67 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But it is quite difficult to solve these problems from the growth mechanism, because the new growth mechanism is difficult to imagine out of thin air
Ther...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Process for synthesizing nano linear carbon array
  • Process for synthesizing nano linear carbon array
  • Process for synthesizing nano linear carbon array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] First, the reaction solution prepared to contain 5mol / l hydrofluoric acid, 0.02mol / l silver nitrate and 0.08mol / l nickel nitrate is put into the hydrothermal kettle, and the filling degree is 80%; Put the monocrystalline silicon wafer cleaned by acid and deionized water ultrasonically into the kettle; treat it at 50°C for 60 minutes, take out the kettle and wait for the kettle to cool down, open the kettle to take out the silicon wafer, and peel off the coating on its surface; The sheet is soaked and cleaned in deionized water for 3-4 times, and dried naturally to obtain the nano silicon wire array.

Embodiment 2

[0019] First, the reaction solution containing 5mol / l hydrofluoric acid, 0.10mol / l silver nitrate and 0.06mol / l nickel nitrate will be prepared into the hydrothermal kettle, and the filling degree is 80%; Put the monocrystalline silicon wafer cleaned by acid and deionized water ultrasonically into the kettle; treat it at 50°C for 60 minutes, take out the kettle and wait for the kettle to cool down, open the kettle to take out the silicon wafer, and peel off the coating on its surface; The silicon chip is soaked and cleaned in deionized water for 3-4 times, and then dried naturally to obtain the nano-silicon wire array.

Embodiment 3

[0021] First, put the reaction solution containing 5mol / l hydrofluoric acid and 0.01mol / l silver nitrate into the hydrothermal kettle, and the filling degree is 80%; Put the processed monocrystalline silicon wafer into the kettle; treat it at 50°C for 60 minutes, take out the kettle and wait for the kettle to cool down, open the kettle to take out the silicon wafer, and peel off the coating on its surface; put the silicon wafer through deionized water for 3- After soaking and cleaning for 4 times, and drying naturally, the nano-silicon wire array is obtained.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A process for synthesizing linear nano carbon array includes putting monosilicon wafer in a hydrothermal reactor containing the reacting solution of hydrofluoric acid (0.2-15 mol/L) and silver nitrate (0.05-0.10 mol/L), and reaction at 30-80 deg.C for 30-150 min to generate large-area linear nano carbon array on the monosilicon wafer. Its advantages are low reaction temp and low cost.

Description

technical field [0001] The invention relates to a method for preparing nanometer materials, in particular to a method for synthesizing nanometer silicon wire arrays, and belongs to the technical field of preparation and application of nanometer materials. Background technique [0002] Due to its unique structure and physical properties, quasi-one-dimensional nanomaterials not only provide valuable research objects for basic physics research, but also herald huge application prospects and economic benefits, which will definitely bring new benefits to traditional materials, microelectronics and other fields. Revolutionary change. Due to the important position of silicon materials in the traditional microelectronics industry, materials with silicon-based nanostructures have received great attention. The current nano-silicon wire preparation methods mainly include: chemical vapor deposition (CVD) [see: Westwater, J., Gosain, D.P., Tomiya, S., Usui, S. & Ruda, H.Growth of silico...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01B33/021
Inventor 彭奎庆朱静
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap