The application belongs to the technical field of nano-plasmonic switch, and relates to a nano-plasmonic switch with a vertical
electrode structure, which comprises, from bottom to top, a substrate layer, a first conductive layer, a
dielectric layer and a second conductive layer; the
dielectric layer is provided with a cavity vertically penetrating the
dielectric layer along the stacking direction, the second conductive layer covers one end of the cavity away from the first conductive layer and is arranged in a spaced mode with the first conductive layer; an excitation
voltage is applied to the first conductive layer and the second conductive layer to form a
potential difference between the first conductive layer and the second conductive layer, so that the first conductive layer and the second conductive layer are used as electrodes, and the cavity is used as an
electrode gap to form the nano-plasmonic switch with the vertical
electrode structure. The application can increase the effective
field electron emission area, reduce the difficulty of switch conduction, and shorten the time required for the switch to change from the cutoff state to the fully on state, and the response speed is fast.