4results about "Solid cathode details" patented technology

The application belongs to the technical field of nano-plasmonic switch, and relates to a nano-plasmonic switch with a vertical electrode structure, which comprises, from bottom to top, a substrate layer, a first conductive layer, a dielectric layer and a second conductive layer; the dielectric layer is provided with a cavity vertically penetrating the dielectric layer along the stacking direction, the second conductive layer covers one end of the cavity away from the first conductive layer and is arranged in a spaced mode with the first conductive layer; an excitation voltage is applied to the first conductive layer and the second conductive layer to form a potential difference between the first conductive layer and the second conductive layer, so that the first conductive layer and the second conductive layer are used as electrodes, and the cavity is used as an electrode gap to form the nano-plasmonic switch with the vertical electrode structure. The application can increase the effective field electron emission area, reduce the difficulty of switch conduction, and shorten the time required for the switch to change from the cutoff state to the fully on state, and the response speed is fast.

The invention belongs to the technical field of nano plasma switches, and relates to a nano plasma switch with a vertical electrode structure, which comprises a substrate layer, a first conductive layer, a dielectric layer and a second conductive layer which are sequentially stacked from bottom to top, the dielectric layer is provided with a cavity vertically penetrating through the dielectric layer along the overlapping direction, the second conductive layer covers one end, far away from the first conductive layer, of the cavity, and the second conductive layer and the first conductive layer are arranged at an interval; and applying excitation voltage on the first conductive layer and the second conductive layer to form a potential difference between the first conductive layer and the second conductive layer, thereby forming the nano plasma switch with a vertical electrode structure by taking the first conductive layer and the second conductive layer as electrodes and the cavity as an electrode gap. According to the invention, the field electron emission area can be effectively increased, the switch conduction difficulty is reduced, the time required for switching the switch from a cut-off state to a complete conduction state is short, and the response speed is high.

Non-evaporable getter (NEG) element and NEG pump comprising a substrate, wherein the substrate is an electrical insulator, and an NEG material layer on the substrate, wherein the NEG material layer is applied to the substrate by thermal spray coating.

The application discloses a gas discharge tube, and belongs to the technical field of discharge tubes. The gas discharge tube comprises an electrode, a ceramic tube wall and electronic powder. The electrode comprises an outer electrode and an inner electrode. The inner electrode is fixedly connected with the inner side wall of the outer electrode. The outer electrode is fixedly and sealingly connected with the ceramic tube. The inner electrode is in a groove shape. The groove opening of the inner electrode is arranged away from the outer electrode. The electronic powder is adhered to the bottom wall of the groove of the inner electrode. The inner electrode with the groove and the electrode powder adhered to the grid can effectively reduce the spatter probability of the electrode powder. Meanwhile, the inner electrode with high temperature resistance can avoid the formation of metal droplets. The groove of the inner electrode can avoid the accumulation of the electrode liquid and the electrode powder to form a conductive belt, and can avoid the discharge tube from being in a short circuit state for a long time. The discharge tube of the application will not fail in short circuit, and the service life of the discharge tube is effectively prolonged.