112 results about "Solid-state lighting" patented technology

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

A solid-state lighting fixture assembly having a lighting fixture with a socket configured to receive a plug associated with one or more accessories to allow for easy in-field mounting of accessories, e.g., controls, onto installed lighting fixtures. The socket may be internally electrically connected to an auxiliary power output of a driver and / or to a battery power pack within the lighting fixture assembly, thereby providing direct-current voltage power for the accessory and, also, allowing for signal transmission to and from the accessory. Each accessory includes one or more sensors and communication components to provide the connected lighting fixture assembly with specific capabilities including, but not limited to, motion detection, ambient light level detection, ambient temperature measurement and wireless communications. The wireless communication can also be used to control one or a group of lighting fixtures and transmit sensor data associated with, for example, monitoring space utilization and asset tracking.

Solid state lighting apparatuses, systems, and related methods are provided. An example apparatus can include one or more light emitting diodes (LEDs) and a dark or black encapsulation layer surrounding and / or disposed between the one or more LEDs. The apparatus can include, e.g., a substrate or a leadframe for mounting the LEDs. A method for producing a panel of LEDs can include joining the LEDs to the panel, e.g., by bump bonding, and flooding the panel with dark or black encapsulation material so that the LED chips are surrounded by the dark or black encapsulation material.

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly structures for LED packages with multiple LED chips are disclosed. LED package structures include arrangements of one or more of body structures with multiple cavities for LED chips, encapsulants with lenses registered with the multiple cavities, and lead frame structures at least partially within the body structures. Cavities of body structures and / or corresponding lenses are disclosed with certain asymmetries configured to direct highest intensities of LED chip emissions in directions that are offset from cavity centers. Body structures are disclosed with one or more continuously planar surfaces that promote enhanced flexibility in encapsulant and / or lead frame structures and improved resistance to moisture ingress. One or more combinations of cavities and / or lenses asymmetries may be implemented in combination with one or more continuously planar body surfaces.

A solid-state lighting fixture assembly having a lighting fixture with a socket configured to receive a plug associated with one or more accessories to allow for easy in-field mounting of accessories, e.g., controls, onto installed lighting fixtures. The socket may be internally electrically connected to an auxiliary power output of a driver and / or to a battery power pack within the lighting fixture assembly, thereby providing direct-current voltage power for the accessory and, also, allowing for signal transmission to and from the accessory. Each accessory includes one or more sensors and communication components to provide the connected lighting fixture assembly with specific capabilities including, but not limited to, motion detection, ambient light level detection, ambient temperature measurement and wireless communications. The wireless communication can also be used to control one or a group of lighting fixtures and transmit sensor data associated with, for example, monitoring space utilization and asset tracking.

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly contact structures in LED chips for reducing voiding of bonding metals are disclosed. LED chips include active LED structures on carrier submounts and contact structures arranged to receive external electrical connections adjacent the active LED structures. Exemplary contact structures include contacts electrically coupled to active LED structures and dielectric structures beneath the contacts. Dielectric structures are arranged beneath portions of the contacts while still allowing electrical connections therethrough. Such dielectric structures may be provided as regions of dielectric material with spacings that control topography of underlying bonding metals to reduce voiding.

Solid state lighting devices including light emitting diodes (LEDs), and more particularly, include a reflector for a support structure in an LED package (48). The support structure includes an arrangement of dielectric reflectors (18) relative to conductive traces (14) and LED chips (36) patterned on the submount (12). The dielectric reflector includes a plurality of dielectric layer structures that form a distributed Bragg reflector (DBR) or in some cases an aperiodic Bragg reflector. Such dielectric reflectors (18) may be disposed on one or more conductive traces (14) and on portions of the submount (12) that are not covered by the conductive traces to provide increased reflectance over various wavelengths provided by the LED chip, including wavelengths in the ultraviolet (UV) spectrum. Each disclosed LED package (34, 42, 44, 46, 48, 50, 52, 54, 56, 60, 62, 64) is also provided with a cover structure (38).

The invention discloses an NCS-doped manganese-based organic-inorganic hybrid metal halide luminescent material and a preparation method thereof, and belongs to the field of photoelectric materials. The chemical formula of the manganese-based organic-inorganic hybrid metal halide is (C12H28N) 2MnBr4: NCS-, and the manganese-based organic-inorganic hybrid metal halide can emit broadband bright yellow light with the central wavelength of 552 nm under the excitation of ultraviolet light. In addition, the preparation method of the luminescent material is simple and easy to operate, raw materials are cheap and easy to obtain, and the luminescent material is suitable for large-scale production. The luminescent material can be used in the fields of solid-state illumination, display and the like.

A vertical solid state lighting (SSL) device is disclosed. In one embodiment, the SSL device includes a light emitting structure formed on a growth substrate. Individual SSL devices can include a embedded contact formed on the light emitting structure and a metal substrate plated at a side at least proximate to the embedded contact. The plated substrate has a sufficient thickness to support the light emitting structure without bowing.

Various embodiments of SST dies and solid state lighting (“SSL”) devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.

A lighting system includes a solid state lighting device capable of generating mixed light and a controller. The solid state lighting device includes light sources for producing mixed light and a sensor configured to detect light from one of the light sources. The controller controls two or more of the light sources based on output from the sensor. The controller can communicate with the sensor to provide closed-loop control.

This invention proposes a high-performance perovskite quantum dot light-emitting diode (LED) based on carbazole-phosphonic acid and its derivatives, and its fabrication method. The perovskite quantum dot emitting layer and / or hole functional layer incorporate an interface modification material with a carbazole-phosphonic acid structure as the core functional layer. The resulting LED device comprises an ITO anode, a lithium fluoride interface buffer layer, a zinc oxide electron transport layer, and a metal cathode. This invention utilizes a one-step solution-blending spin-coating method to prepare a modified functional layer with surface passivation and a microscopic PN junction space charge region structure. It also demonstrates a device fabrication method using commercially available MeO-2PACz materials to replace PEDOT:PSS. The device exhibits stable and efficient structure, high bandgap matching, and the fabricated perovskite quantum dot LED demonstrates high brightness, significantly suppressed efficiency roll-off, and excellent high-current operating stability, showing great application potential in large-area displays and solid-state lighting.

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly arrangements of lumiphoric materials within LEDs and related methods are disclosed. Lumiphoric materials are incorporated or otherwise embedded within LED chips and LED wafers. Embedded lumiphoric materials are provided so that at least some portions of light generated by active LED structures are subject to wavelength conversion before exiting LED chip surfaces. Lumiphoric material layers include arrangements of lumiphoric particles and binder layers positioned between reflective layers and active LED structures. Lumiphoric material layers and / or lumiphoric particles may be patterned within regions of LED chips and / or LED wafers. Related methods include depositing lumiphoric particles and binder layers before reflective layers in LED chips and LED wafers.

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly structures for LED packages with multiple LED chips are disclosed. LED package structures include arrangements of one or more of body structures with multiple cavities for LED chips, encapsulants with lenses registered with the multiple cavities, and lead frame structures at least partially within the body structures. Cavities of body structures and / or corresponding lenses are disclosed with certain asymmetries configured to direct highest intensities of LED chip emissions in directions that are offset from cavity centers. Body structures are disclosed with one or more continuously planar surfaces that promote enhanced flexibility in encapsulant and / or lead frame structures and improved resistance to moisture ingress. One or more combinations of cavities and / or lenses asymmetries may be implemented in combination with one or more continuously planar body surfaces.

A solid state lighting device including a light emitting diode (LED) is disclosed, and more particularly, a structure of an LED package having a plurality of LED chips is disclosed. The LED package structure includes an arrangement of one or more of a body structure having a plurality of cavities for LED chips, an encapsulation having a lens in registration with the plurality of cavities, and a lead frame structure at least partially located within the body structure. Cavities having a body structure and / or corresponding lenses with certain asymmetries configured to direct the highest intensity emitted by the LED chip to a direction offset from the center of the cavity are disclosed. A body structure is disclosed having one or more continuous flat surfaces that improve enhanced flexibility of the encapsulant and / or leadframe structure, as well as improved resistance to moisture intrusion. One or more combinations of cavity and / or lens asymmetry may be implemented in conjunction with one or more continuous flat body surfaces.

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED chip structures and related methods are disclosed. LED chip structures include arrangements of current spreading layers and dielectric reflective layers relative to active LED structures. Current spreading layers may be positioned to provide electron path steering toward bulk portions of active LED structures and away from associated mesa sidewalls. Dielectric reflective layers may cover current spreading layers while also extending to cover the mesa sidewalls. Dielectric reflective layers include etch stop layers followed by one or more dielectric layers. The etch stop layers allow over-etching of the dielectric layers to ensure integrity of openings for various electrical interconnects formed through the dielectric reflective layer in related methods. Arrangements of electrical interconnects are also provided that provide tailored current balancing for LED chips.

Epitaxial formation support structures and associated methods of manufacturing epitaxial formation support structures and solid state lighting devices are disclosed herein. In several embodiments, a method of manufacturing an epitaxial formation support substrate can include forming an uncured support substrate that has a first side, a second side opposite the first side, and coefficient of thermal expansion substantially similar to N-type gallium nitride. The method can further include positioning the first side of the uncured support substrate on a first surface of a first reference plate and positioning a second surface of a second reference plate on the second side to form a stack. The first and second surfaces can include uniformly flat portions. The method can also include firing the stack to sinter the uncured support substrate. At least side of the support substrate can form a planar surface that is substantially uniformly flat.

A lighting circuit for solid-state lighting, such as light-emitting diodes (LEDs), is configured to produce reduced visible flicker. The lighting circuit may accept time-varying input power, such as alternating current (AC) power or rectified AC power. Within the circuit, a plurality of LED light engines are grouped in sets. Some of the sets receive unaltered input power, while other sets receive input power that has been shifted in phase. The phases of the sets of LED light engines are coordinated such that, at any time during the power cycle, at least one set of LED light engines is illuminated, and the lighting circuit as a whole produces a substantially constant luminous flux over the entire power cycle. LED light engines from different sets may be grouped or clustered together on a printed circuit board such that, in the aggregate, they do not produce the illusion of movement during illumination.

A solid-state lighting fixture assembly having a lighting fixture with a socket configured to receive a plug associated with one or more accessories to allow for easy in-field mounting of accessories, e.g., controls, onto installed lighting fixtures. The socket may be internally electrically connected to an auxiliary power output of a driver and / or to a battery power pack within the lighting fixture assembly, thereby providing direct-current voltage power for the accessory and, also, allowing for signal transmission to and from the accessory. Each accessory includes one or more sensors and communication components to provide the connected lighting fixture assembly with specific capabilities including, but not limited to, motion detection, ambient light level detection, ambient temperature measurement and wireless communications. The wireless communication can also be used to control one or a group of lighting fixtures and transmit sensor data associated with, for example, monitoring space utilization and asset tracking.

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED packages for environmental indication are disclosed. LED packages include one or more LED chips and reactive materials that preferentially react with environmental ingress. After sufficient reactant exposure, the reactive materials may degrade and exhibit reduced electrical conductivity. Reactive material arrangements relative to electrical connections are provided so that the one or more LED chips either turn on, turn off, or lose brightness to provide visual indication of environmental reactants. Reactive materials may form electrical shorting paths that bypass one or more LED chips until sufficient reactant exposure when the shorting paths fail and the one or more LED chips are electrically activated. Alternatively, reactive materials may form parts of electrically conductive paths for the one or more LED chips such that with sufficient reactant exposure, the electrically conductive paths fail and the one or more LED chips are electrically deactivated.

A light-emitting diode (LED) luminaire with dual-frequency visual stimulation flickers, comprising: two sets of LED arrays disposed on a printed circuit board in an interlaced configuration; a pulse-width modulation (PWM) pulse generator; and an LED driving circuit, is configured to replace a conventional luminaire. The PWM pulse generator is configured to generate two modulating signals at respective temporal modulation frequencies. The LED driving circuit is configured to receive the two modulating signals and generate corresponding driving currents to drive the two sets of LED arrays, thereby producing visual stimulation flickers at the two temporal modulation frequencies. The resulting dual-frequency visual stimulation flickers induce a symmetric harmonic frequency perceptible by the human brain, thereby enhancing a benign brain oscillation and endogenously triggering and entraining a gamma-band neural oscillation.

Solid-state lighting devices including light-emitting diodes (LEDs), and more particularly LED packages are disclosed. Arrangements for LED packages are disclosed that provide improved reliability and improved emission characteristics in a variety of applications, including outdoor LED displays as well as general illumination. LED packages are disclosed with linear arrangements of LED chips and corresponding lenses to provide improved visibility and color mixing at higher viewing angles. LED packages are disclosed that include different types of lenses that are arranged within the same LED package depending on desired emission characteristics. Body structures for LED packages are disclosed that include arrangements for improved adhesion with encapsulant materials and optional potting materials to provide improved moisture barriers.

The invention discloses cold and warm white light adjustable perovskite fluorescent powder prepared by an ultrasonic-assisted hydrochloric acid method. The chemical general formula of the perovskite fluorescent powder is Cs2ZrCl6: xBiamp, 0 < = x < = 0.2, and 0 < = y < = 0.99. The purpose of the invention is to realize temperature-adjustable white light emission of lead-free rare earth-free perovskite under the excitation of ultraviolet light with different wavelengths. The preparation scheme comprises the following steps: 1, dissolving zirconium source powder, bismuth source powder and tellurium source powder in hydrochloric acid according to a certain proportion, and stirring to obtain a clear solution; 2, adding a certain proportion of cesium source powder into the clear solution; and 3, carrying out ultrasonic treatment, centrifugal washing and vacuum drying on the solution to obtain the lead-free and rare earth-free Cs2ZrCl6: xBiamp with adjustable cold and warm white light, the invention relates to yTe perovskite fluorescent powder. The preparation method comprises the following steps: preparing Cs2ZrCl6: xBiamp by using an ultrasonic-assisted hydrochloric acid method; the yTe perovskite fluorescent powder can realize emission from cold white light to warm white light by changing the excitation wavelength of ultraviolet light. The method disclosed by the invention is simple in preparation, short in time consumption, low in cost, green and environment-friendly; the yTe white-light fluorescent powder has a good application prospect in the field of solid-state illumination.

The invention relates to a perovskite composite material as well as a preparation method and application thereof. The perovskite composite material comprises APTES modified lead halide perovskite nanocrystals and organic-inorganic hybrid perovskite glass, the APTES modified lead halide perovskite nanocrystal is completely encapsulated in the organic-inorganic hybrid perovskite glass, and the APTES modified lead halide perovskite nanocrystal is formed by the organic-inorganic hybrid perovskite glass and the inorganic-organic hybrid perovskite glass. The organic-inorganic hybrid perovskite glass comprises (TPnA) M (dca) 3 and Li (C2N3). According to the invention, pre-stabilization treatment is realized by modifying lead halide perovskite nanocrystals by using APTES, then Li (C2N3) is introduced to realize low-temperature fusion packaging of organic-inorganic hybrid perovskite glass on the nanocrystals, and under the synergistic effect of the two, the composite material with high luminescence property and high stability is obtained. The perovskite composite material containing CsPbBr3 can be used as a green light conversion layer to be integrated with commercial red powder and a blue light chip into a WLED device, and has a good application prospect in the fields of solid-state illumination and display.

The invention belongs to the technical field of luminescent materials and solid-state lighting, and particularly discloses Ba2AlLaO5: Eu < 3 + > red-light fluorescent powder and a preparation method thereof. The fluorescent powder can be effectively excited in a near ultraviolet / purple light wave band to generate red light for emission, and belongs to transition from 5D0 to 7FJ (J = 0-4) of Eu < 3 + >; gd < 3 + > does not directly emit light, but can sensitize Eu < 3 + > through non-radiative energy transfer, so that the emission intensity of red light (702 nm) is enhanced. The fluorescent powder has the advantages of being stable in structure, capable of being matched with a near ultraviolet / purple light LED chip, strong in dark red emission and the like, and is suitable for the fields of solid-state illumination, display and the like.

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly identification markers for LED packages and related methods are disclosed. Identification markers may include materials incorporated within LED packages that are transparent in a visible spectrum but detectable when illuminated with light outside the visible spectrum. When radiated with light outside the visible spectrum, identification markers may provide light in the visible spectrum. Alternatively, identification markers may provide light outside the visible spectrum that is detectable with equipment capable of detecting nonvisible light. Identification markers are generally configured to not be readily visible under inspection as a way to make LED packages more difficult for copying in counterfeit products.

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly reflective structures for LED chips and related methods are disclosed. Reflective structures include arrangements of a first metal and a second metal within a metal reflective layer. The second metal may have a nonuniform distribution throughout a thickness of the metal reflective layer relative to the first metal. The first metal may promote increased reflectivity relative to the second metal, and the second metal may promote increased mechanical stability, increased adhesion, and reduced electromigration. An exemplary metal reflective layer includes increased concentrations of the second metal near interfaces between the metal reflective layer and other layers of the LED chip. The second metal may also form concentration gradients in directions away from the interfaces. Related methods include sequentially forming discrete layers of the first and second metals, followed by annealing to form the metal reflective layer.

Solid state lighting (“SSL”) devices with improved current spreading and light extraction and associated methods are disclosed herein. In one embodiment, an SSL device includes a solid state emitter (“SSE”) that has a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device can further include a first contact on the first semiconductor material and a second contact on the second semiconductor material and opposite the first contact. The second contact can include one or more interconnected fingers. Additionally, the SSL device can include an insulative feature extending from the first contact at least partially into the first semiconductor material. The insulative feature can be substantially aligned with the second contact.

The invention discloses a preparation method and application of a transition metal ion doped CdSe / ZnS core-shell quantum dot, according to the method, transition metal ions are controllably introduced into a host CdSe / ZnS material forbidden band as a magazine energy level so as to create a new electron energy level, and meanwhile, the number of defect energy levels of the CdSe core quantum dot is remarkably reduced; and a light-emitting mechanism is successfully converted from band-edge exciton recombination to non-radiative transition recombination. And the dependence of the luminescence performance on the physical size of the quantum dot is eliminated. Due to the characteristic, the material has the excellent temperature response characteristic: the material has wide-spectrum and tunable luminescence, huge Stokes shift to eliminate self-absorption, excellent light stability and long fluorescence lifetime, and has the potential of low toxicity. Due to the advantages, the material has a huge application prospect in the fields of biological imaging, fluorescence detection, solid-state illumination and the like.

Solid-state lighting devices including light-emitting diode (LED) chips and more particularly interconnect structures for improved LED chip performance are disclosed. Interconnect structures are disclosed within LED chips that are structured to increase perimeter contact areas within localized LED chip areas without substantial increases to overall areas occupied by the interconnect structures. By increasing contact perimeters of interconnects within a certain area, increased current injection efficiency may be provided. Interconnect structures for increased current injection are disclosed for both n-type layers and p-type layers. Interconnect structures may include patterned dielectric materials within interconnect openings and corresponding interconnects that are formed around the patterned dielectric materials. Additional interconnect structures include nested patterns and extensions that provide enhanced adhesion along LED chip perimeters.