This invention belongs to, but is not limited to, the field of
thyristor technology, and discloses a mesa
thyristor structure for improving IGT consistency. It includes a glass tank terminal, a
cathode, and a gate, with no adjacent gate region. The glass tank terminal ensures
high voltage for the device. The
cathode is the current outflow terminal. The gate receives a trigger current, which flows from the gate to the
cathode region, controlling the
thyristor's conduction. This invention reduces the distance between the cathode region and the glass tank to zero, eliminating the
boron-expanded region, which no longer affects IGT parameters, resulting in minimal IGT differences between the
wafer edge and central regions. During mesa
etching, the width of the glass tank does not affect IGT parameters, making the requirements for mesa
etching less stringent and suitable for
mass production.