9008 results about "Triode" patented technology

Several inventions are disclosed. A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other polygons enabling a variety of cell shapes to be accommodated. Polydirectional non-orthogonal three layer metal routing is disclosed. The architecture may be combined with the tri-directional routing for a particularly advantageous design. In the tri-directional routing arraingement, electrical conductors for interconnecting terminals of microelectronic cells of an integrated circuit preferrably extend in three directions that are angularly displaced from each other by 60°. The conductors that extend in the three directions are preferrably formed in three different layers. A method of minimizing wire length in a semiconductor device is disclosed. A method of minimizing intermetal capacitance in a semiconductor device is disclosed. A novel device called a "tri-ister" is disclosed. Triangular devices are disclosed, including triangular NAND gates, triangular AND gates, and triangular OR gates. A triangular op amp and triode are disclosed. A triangular sense amplifier is disclosed. A DRAM memory array and an SRAM memory array, based upon triangular or parallelogram shaped cells, are disclosed, including a method of interconnecting such arrays. A programmable variable drive transistor is disclosed. CAD algorithms and methods are disclosed for designing and making semiconductor devices, which are particularly applicable to the disclosed architecture and tri-directional three metal layer routing.

Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second RF power source; a third RF power source; a fourth RF power source; and a switch. The first, second, and third power sources are coupled to the bottom electrode. Further, the switch is operable to be in one of a first position or a second position, where the first position causes the top electrode to be connected to ground, and the second position causes the top electrode to be connected to the fourth RF power source.

The invention provides a fully-automatic screw locking machine for a radiator. The fully-automatic screw locking machine comprises a rack, as well as a radiating fin loading mechanism, a triode loading mechanism, a screw loading mechanism, a screw locking mechanism, a screw detection mechanism for detecting installation missing of screws, a forming mechanism, a forming and foot-cutting mechanism, an unloading mechanism and a multi-station rotary disc mechanism which are installed on the rack respectively, wherein the radiating fin loading mechanism, the triode loading mechanism, the screw locking mechanism, the screw detection mechanism, the forming and foot-cutting mechanism and the unloading mechanism are sequentially distributed at the periphery of the rotary disc of the multi-station rotary disc mechanism along the rotation direction of the rotary disc, and are orderly and respectively matched with corresponding station clamps on the rotary disc; and the screw loading mechanism is arranged at one side of the screw locking mechanism, and matched with the screw locking mechanism. The fully-automatic locking screw machine provided by the invention can be used for automatically sequencing, assembling, screw locking, forming and discharging after radiating fins are placed in a radiating fin vibration disc in batches, whole triodes are placed in a triode feeding slide way, and screws are placed in a screw vibration disc in batches.

The invention discloses an LED (Light Emitting Diode) drive circuit with a dimming function and a lamp. The drive circuit comprises a triode AC (Alternating Current) semiconductor switch (TRIAC) light modulator which receives alternating current input voltage, and generates a phase-cut voltage signal which is rectified through a rectifier module to be coupled to a dimming signal generator; a power factor collection controller receives the output signal of the dimming signal generator and a feedback signal reflecting the brightness of an LED; and an output switch control signal controls the on and off of a switch tube so as to realize the drive of the LED. Through adjusting the conduction angle of the TRIAC light modulator, the dimming of the LED is realized.

An amplifier is operable in push-pull mode, single-ended mode, or a composite mode that is an intermediate between single-ended and Push-pull modes. Moreover, at least one output device may be configured to operate using a high performance AC servo loop that functions the output device as a current source. Still further, a control input driver stage is provided that is capable of supplying sufficient AC current to overcome Miller capacitance induced roll off within the intended frequency spectrum of triode vacuum tubes. Additionally, methods are provided to substantially null or selectively introduce DC magnetic bias within the output transformer core. Still further, a solid state power supply stage provides substantial AC hum reduction during single-ended operation and simultaneously provides output voltage load regulation attributes similar to traditional vacuum tube rectifier circuits.

The invention relates to a drive circuit applied to a power switch tube MOSFET, in particular to a drive circuit of a silicon carbide MOSFET, and belongs to the technical field of drive circuits. The drive circuit aims to solve the problem that when an MOSFET in an existing drive circuit is turned off, the reliability is poor. The drive circuit comprises a PWM control circuit, a drive pulse amplifying circuit, a drive resistor Rg, a first diode D1, a resistor R1, a PNP triode Qoff, a second diode D2 and a capacitor C. According to the drive circuit, the PNP triode Qoff, the resistor R1 and the capacitor C form an MOSFET turn-off circuit; when the MOSFET is turned off quickly, a gate pole positive voltage spike caused by Miller currents is effectively suppressed; meanwhile, a gate pole negative voltage spike can also be suppressed through the second diode D2 and the capacitor C, it is guaranteed that the MOSFET is turned off safely and reliably, and the performance advantages of the silicon carbide MOSFET can be given to full play.

The invention discloses a switching power supply circuit, which comprises a starting circuit, a pulse width modulation (PWM) controller, a starting turn-off circuit, a main power tube and a main transformer, wherein the starting turn-off circuit comprises a first resistor, a turn-off triode, a charging capacitor, a first voltage sharing resistor and a second voltage sharing resistor; a connection point between the current sampling end of the PWM controller and a source of the main power tube is connected to the voltage reference end of the starting circuit through the first resistor; one circuit of the output end of the PWM controller is connected to the voltage reference end of the starting circuit through the charging capacitor and the other circuit of the output end of the PWM controller is connected to the voltage reference end of the starting circuit through the first voltage sharing resistor and the second voltage sharing resistor sequentially; a connection point between the first voltage sharing resistor and the second voltage sharing resistor is connected to a base of the turn-off triode; a collector of the turn-off triode is connected to the control end of the starting circuit; and an emitter of the turn-off triode is connected to the voltage reference end of the starting circuit.

The invention relates to a protection circuit driven by insulated gate bipolar transistor (IGBT). It is composed of power supply, IGBT, a signal circuit driven by upper and lower bridges, light coupler, a control circuit with a switch triode, an amplifying circuit for driving signal, a protection circuit for detecting and adjusting the voltages between collector and emitter of IGBT. Said protection circuit includes a short circuit protection circuit, fault latching circuit and fault soft switch off circuit. When the voltage of collector-emitter of IGBT is abnormal, the voltage of insulated gate of IGBT is adjusted to lower than threshold voltage, by the operation of short circuit protection circuit as well as control and amplifying circuit. Thus the IGBT is cut-off and the close latching is realized by that fault latching circuit. It guarantees to close off IGBT before CPU receives the fault signal and closes off driving signal.

The invention belongs to the electronic technique field and storage battery charging, and relates to an intelligent charger for a storage battery of an electric vehicle. The intelligent charger for the storage battery consists of 220V alternating current, a power transformer T, a full-wave rectification circuit, a pulse direct current indicating circuit, unidirectional controllable silicon and a trigger circuit thereof, a biasing circuit of a PNP triode VT1, a charging output terminal and a charging state indicating circuit. The intelligent charger for the storage battery of the electric vehicle has multiple protective functions of preventing a polar plate of the storage battery from falling off or electrodes of the storage battery from being disconnected, preventing the storage battery from being subjected to short circuit, preventing inverted connection of a positive electrode and a negative electrode of the storage battery, preventing nominal voltage of a storage battery module from being deflected, preventing the polar plate of the storage battery from being subjected to lead sulfate formation, charging quickly, self-stopping until the storage battery is full of power and the like, so that a great convenience is supplied to a storage battery user; and the intelligent charger is suitable to be extensively used by an electric vehicle user and also suitable for developing charging and maintenance services in a shop or a stall.

A fast organic field effect transistor (100), which operates at low voltages, is achieved by the introduction of an oligomeric or polymeric electrolyte (131) between the gate electrode (141) and the organic semiconductor layer (121), which electrolyte (131) has a dissociation constant of at least 10−8. Said organic semiconductor layer (121) is in contact with the source electrode (111) and the drain electrode (112) of the transistor. In operation a potential (152) applied to said gate electrode (141) controls the current A between said source electrode (111) and said drain electrode (112).

A programmable control unit for a vacuum cleaning system, such as central vacuum cleaning system. A control unit is programmed after manufacture to execute a particular control program for performing various diagnostic and operational functions including user interface, voltage level detecting, voltage monitoring, current monitoring, user interface, power supply control, temperature monitoring, AC line frequency detection, operation data recording, speed control program selection, expansion bus interface and service tool interface. Power control to the vacuum motor is facilitated by the control unit directly through a triode for alternating current (TRIAC). Manufacturing costs are reduced by producing a single programmable control unit that can be programmed with a control program corresponding to a variety of different vacuum cleaning devices across a manufacturer's product line.

This invention relates to a piezoelectric ceramics driver circuit used for regulating optical fiber stress. It is composed of three parts: Part 1, the voltage amplifier stage circuit, comprising: a constant-current source circuit composed of triode Q1 and resistances R1, R2 and R3; a feedback comparator composed of R4, R5 and R6, and Q2, Q3; and a regulating tube Q4; Part 2, the power amplifier stage circuit, comprising: a selected high power and high voltage-resisting N-channel VMOS tube IRF830 substituted for the existing complementary symmetric circuit; and Part 3, the discharging 100p circuit, comprising: diodes D1, D2 and triode Q5 and a comparator. This invention has advantages of: simple structure, low energy consumption, small volume, stable working, safety, excellent dynamic response to non-regulated signals, quick response, wide response frequency range.

The invention relates to an automobile headlamp automatic control system based on machine vision. The automobile headlamp automatic control system is characterized in by comprising a camera arranged at the inner side of a windscreen in the front of an automobile, wherein the camera is connected with a DSP (Digital Signal Processor) control system arranged on a central control panel of the automobile through a data line, an output end of the DSP control system is connected with a triode, the triode is connected with a control end of a relay, another control end of the relay is connected to a power supply of the automobile, and contacts of the relay are connected in a headlamp control circuit of the automobile in series; the camera collects the information of road lamps at the two sides of a road and the lamp information of automobiles in an opposite direction in real time and sends collected color images to the DSP control system, the DSP control system analyzes and processes pixels in the road lamp zone and the automobile lamp zone and sends control commands to the triode according to processed results, and the triode controls the relay to pull in and disconnected so as to control the automobile to be switched between a high beam lamp and a dipped headlamp. The system can be broadly used for the switch control of the headlamp of the automobile running at night.

A CMOS structure including a Slim spacer and method for forming the same to reduce an S / D electrical resistance and improve charge mobility in a channel region, the method including providing a semiconductor substrate including a polysilicon gate structure including at least one overlying hardmask layer; forming spacers selected from the group consisting of oxide / nitride and oxide / nitride oxide layers adjacent the polysilicon gate structure; removing the at least one overlying hardmask layer to expose the polysilicon gate structure; carrying out an ion implant process; carrying out at least one of a wet and dry etching process to reduce the width of the spacers; and, forming at least one dielectric layer over the polysilicon gate structure and spacers in one of tensile and compressive stress.

Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are presented, where the amplifier can have a varying supply voltage that varies according to a control voltage. The control voltage can be related to a desired output power of the amplifier and / or to an envelope signal of an input signal to the amplifier. Particular biasing for selectively controlling the stacked transistors to operate in either a saturation region or a triode region is also presented. Benefits of such controlling, including increased linear response of an output power of the amplifier, are also discussed.

A tail-tank coupling technique combines two complementary differential LC-VCOs to form a quadrature LC-VCO. The technique reduces phase noise by providing additional energy storage for noise redistribution and by cancelling noise injected by transistors when they operate in the triode region. The resulting noise factor is close to the theoretical minimum 1+γ, similar to a differential LC-VCO driven by an ideal noiseless current source. However, its figure-of-merit is higher, due to the absence of voltage head-room being consumed by a current source. The optimal ratio of tail-tank capacitor to main-tank capacitor for minimizing phase noise is approximately 0.5. The method can be extended to combine any even number of LC tanks resonating at fo and 2fo to form an integrated oscillator producing quadrature phase at frequency fosc and differential output at 2fosc.

A voltage reference source with high-order temperature compensation circuit belongs to the electronic technical field. The voltage reference source comprises a starting current and positive temperature coefficient current generating circuit, a negative temperature coefficient current generating circuit, a high-order temperature compensation current generating circuit and a superimposition and summation output circuit. The added high-order temperature compensation current generating circuit performs linearization to the breakover voltage VBE between the voltage of the base and emitter of a triode to obtain a high-order compensation amount which is in agreement with the high-order temperature amount of the PN junction voltage, and the high-order temperature coefficient of the PN junction voltage can be eliminated fundamentally after proportional offset, thus realizing a CMOS voltage reference source with the lower temperature coefficient. The voltage reference source is prepared by the common CMOS technology with lower cost, has extremely low temperature coefficient, less power consumption and smaller area, and can be used in the reference circuits such as analog circuits and digital-analog hybrid circuits which are required to have low temperature coefficients.

The invention discloses a sectional linear temperature compensating circuit and a temperature compensating voltage reference source. The sectional linear temperature compensating circuit consists of resistances and a triode, wherein the number of resistances is at least two; the base electrode of the triode is connected with the input port to constitute an input end. One end of a first resistance is connected with the input port, and the other end is connected with a ground wire; the emitting electrode of the triode is connected with the ground wire through a second resistance, and the collector electrode of the triode constitutes an output end. In the voltage reference source, the band-gap reference source and the input end of a positive-temperature coefficient electric current generating circuit are connected with a summing output circuit and a sectional linear temperature compensation circuit respectively. The output end of the sectional linear temperature compensating circuit is connected with the summing output circuit. The invention reduces the impact of resistance temperature on the output amount and has good process compatibility and temperature stability.

A method of manufacturing a triode field emission cold cathode device having randomly distributed field emission emitters comprising the steps of providing a substrate (10), depositing a first conductive layer (11) on the substrate, spraying the preceding layer with a random pattern of masking material (20), depositing an insulating layer (13) on the masked preceding layer, depositing a second conductive layer (14) on the insulting layer, and removing the masking material. A triode field emission cold cathode device having randomly distributed field emission emitters is also provided.

A transistor includes a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer and has a band gap larger than that of the first semiconductor layer, a control layer formed on the second semiconductor layer and contains p-type impurities, a gate electrode formed in contact with at least part of the control layer and a source electrode and a drain electrode formed on both sides of the control layer, respectively. A third semiconductor layer made of material having a lower etch rate than that of the control layer is formed between the control layer and the second semiconductor layer.

The invention relates to a radiation-proof self-recovery over-current / short-circuit protection circuit for a satellite. On the basis of a line structure, the self-recovery over-current / short-circuit protection function is realized. Moreover, the circuit has advantages of reasonable design, small size, and light weight. The radiation-proof self-restoring over-current / short-circuit protection circuit is composed of a power supply module, a triode driver module, a VDMOS tube module including a VDMOS tube Q2, a current detection, amplifier and comparator module, a trigger feedback module having a D trigger U3, and a precision sampling resistor RS1 connected in series to a bus. The power supply module is used for providing power for the current detection, amplifier and comparator module and the trigger feedback module through buses. The input terminal of the triode driver module is connected with an input signal of the control circuit and the output terminal is connected with a gate terminal of the VDMOS tube Q2; and a source end of the VDMOS tube Q2 is connected with the bus by the precision sampling resistor RS1 and a drain end is grounded by a resistor R13. The current detection, amplifier and comparator module consists of a current detection chip U1 for current detection and signal amplification and a comparator U2.

The invention discloses a self-exited push-pull converter, comprising an input soft starting circuit, a bipolar push-pull circuit, a coupling transformer and an output filter circuit, wherein the input soft starting circuit, the bipolar push-pull circuit, the coupling transformer and the output filter circuit are connected in order; the bipolar push-pull circuit comprises two triodes and a high frequency self-exited suppression circuit, wherein the two triodes are in push-pull connection; the emitters of the two triodes are grounded; the bases of the two triodes are respectively connected with two ends of a feedback winding of the coupling transformer; the collectors of the two triodes are connected with two ends of a primary winding of the coupling transformer; the high frequency self-exited suppression circuit is used for removing sine vibration generated due to high characteristic frequency when the triodes are electrified; and the high frequency self-exited suppression circuit is connected in the bipolar push-pull circuit. The self-exited push-pull converter can effectively control high frequency vibration.

The invention discloses an SiC MOSFET grid crosstalk suppression circuit and a drive circuit. The grid crosstalk suppression circuit is connected between a grid and a source of the SiC MOSFET and theSiC MOSFET drive circuit on the basis of a bridge type converter, and comprises a triode-based negative voltage ripple suppression circuit and an MOS transistor-based straight-through preventing circuit; the voltage ripple suppression circuit is used for suppressing negative voltage between the grid and the source of the SiC MOSFET, and the straight-through preventing circuit is used for preventing mutual straight through between bridge arms of the bridge type converter.

The invention discloses an isolated rapid turn-off metal oxide field effect transistor (MOFET) driving circuit, which comprises a totem-pole output circuit, a transformer T, a negative voltage generation circuit and an MOSFET, wherein an output point of the totem-pole output circuit is connected with the primary dotted terminal of the transformer T through the anode of a blocking capacitor C1; the secondary dotted terminal of the transformer T is sequentially connected in series with a secondary capacitor C2, a diode D4, an electrolytic capacitor C3, a resistor R1 and the MOSFET, and then is connected to the secondary unlike terminal of the transformer T; a voltage stabilizing diode D3 is connected to the two ends of the secondary side of the transformer T; the base of a triode Tr3 is connected with the anode of the secondary capacitor C2, the collector of the triode Tr3 is connected with the cathode of the diode D4, and the emitter of the triode Tr3 is connected with the secondary unlike terminal of the transformer T; a diode D6 is reversely connected in parallel with the two ends of the gate input resistor R1; a voltage stabilizing diode D5 is connected in parallel with the two ends of the electrolytic capacitor C3; and a resistor R2 is connected between the gate and source of the MOSFET. The circuit is applied to places with high requirements on the anti-interference capability of the driving circuit and on rapid turn-off and with large duty ratio variation ranges.

The invention belongs to the technical field of testing electrician devices, and particularly relates to the testing of an electromagnetic relay. Electromagnetic relay testing equipment comprises a power source (6), a bus baseboard (7), an interface (8) and a cable (9) for connecting the interface (8) with a pin of a tested relay (11), and the equipment is characterized by also comprising a high-power direct-current power source (1), a load resistor (2), a main controller (3), a multifunctional board card (4), a signal conditioning board card (5) and a hall sensor (10). The electromagnetic relay testing equipment has the main advantages that 1. during testing, a contact of the tested relay works at rated load current, so that a reliable testing conclusion can be given; 2. transistor devices such as triodes and field-effect tubes are used for controlling the electromagnetic relay to act and switch signals, so that the influence of action delaying on testing results is eliminated, and the service life of the testing equipment is prolonged; 3. the parameter variation of the electrical property of the tested relay can be forecasted so as to provide the basis for application.

The invention relates to an improved gate drive device for SiC MOSFET bridge crosstalk suppression, belonging to the technical field of SiC driving. The device includes a main drive circuit and a passive auxiliary circuit, the main drive circuit is composed of a DC-DC converter unit, an optocoupler isolation chip unit, a drive chip unit and a drive resistor unit, and the passive auxiliary circuit is composed of a forward peak voltage suppression unit and an inverse peak voltage suppression unit. The invention provides a novel auxiliary circuit improved driving method additionally provided with a triode serial capacitor on the basis of a conventional drive circuit. Through the reasonable design of the main drive circuit and the passive auxiliary circuit, the aims of bridge crosstalk suppression, switch time-delay time shortening, switch loss reduction, and control complexity reduction can be achieved. The device provided improves the work reliability and efficiency of a SiC MOSFET bridge converter and reduces the cost and complexity of drive control.

The invention discloses a one-way isolated type metal-oxide-semiconductor filed-effect transistor (MOSFET) drive circuit. The one-way isolated type MOSFET drive circuit comprises a level transformation and pulse drive circuit, a pulse transformer, a magnetic reset circuit and an acceleration turn-off circuit. The level transformation and pulse drive circuit is used for level transformation and power amplification on input pulse signals so as to drive the pulse transformer to work. The magnetic reset circuit is used for enabling the pulse transformer to carry out reliable magnetic reset. The acceleration turn-off circuit is used for accelerating turn-on and turn-off of a MOSFET tube, and comprises a capacitor, a second resistor, a third resistor and a PNP type triode. One end of the capacitor is connected with an auxiliary edge synonym end of the pulse transformer, the other end of the capacitor is connected with the second resistor, and the other end of the second resistor is connected with a grid electrode of the MOSFET tube. The third resistor is connected with the capacitor in parallel, a collector electrode of the PNP type triode is connected with an auxiliary edge non-synonym end of the pulse transformer, a base electrode of the PNP type triode and the capacitor are connected with one end of the second resistor, and an emitting electrode of the PNP type triode is connected with the grid electrode of the MOSFET tube.

The invention provides an LED light-dimming driving circuit comprising a short-circuit protection circuit, a ballast output circuit and a constant-current adjusting circuit. The LED light-dimming driving circuit is characterized by further comprising a driving switch circuit. The constant-current adjusting circuit comprises a single-chip microcomputer U1, a current sampling resistor R4, a light-dimming potentiometer W1 and a pressure parting resistor R2. A signal output pin of the single-chip microcomputer U1 outputs PWM (pulse width modulation) pulse signals, so that a driving triode Q2 and a switch triode Q1 are cut off or put through and lighting of LEDs can be controlled. The single-chip microcomputer U1 adjusts the PWM pulse signals output by the signal output pin according to feedback current. By the LED light-dimming driving circuit which is low in cost, simple in structure and efficient, the LED circuit is adjustable in luminance when at constant current state. Meanwhile, overheat protection, short-circuit protection and reverse-connection prevention function are added to the LED light-dimming driving circuit, so that stability, reliability and universality of the LED light-dimming driving circuit are improved.

The invention provides an LED drive control circuit, which is applicable to the field of lighting circuits. The LED drive control circuit comprises a singlechip, a triode, a metal oxide semiconductor (MOS) transistor, a constant current integrated chip and an energy storage inductor, wherein the singlechip is connected with the two ends of a power supply; a base electrode of the triode is connected with the singlechip, while an emitting electrode is connected with the negative electrode of the power supply; the triode is turned on or off under the control of the singlechip; the gate of the MOS transistor is connected with the collector of the triode through a voltage division resistor R1, while the source is connected with the positive electrode of the power supply; the power end of the constant current integrated chip is connected with the drain of the MOS transistor, while the feedback end is connected with the LED for sampling the current; and the energy storage inductor is connected between the output end of the constant current integrated chip and the LED. The LED drive control circuit provided by the invention is realized by using the constant current integrated chip of low cost and high efficiency so as to ensure stable and reliable work of the LED; and the entire circuit has a very simple structure.

A system and method for providing constant loading in AC power applications wherein at least one turn-on point (7) of at least one half cycle of a modulating sine wave (2) is determined; at least one turn-off point (8) of said at least one half cycle of a modulating sine wave (2) is determined; and at least one slice (5) located between said at least one turn-on point (7) and said at least one turn-off point (8) is removed. The slices (5) may be removed by utilizing triode alternating current switches, silicone controlled rectifiers, insulated gate bipolar transistors or field effect transistors.