1367 results about "Triode" patented technology

The utility model relates to the technical field of backlight power supplies, aims to solve the technical problems of large misoperation and poor stability of a backlight circuit, and discloses a backlight control circuit, which comprises a voltage reduction module U12 for reducing the voltage of a power supply VCC1 into a power supply VCC2, a backlight controller U10 and an enable circuit, and the enable circuit comprises a triode Q14 and a triode Q12. The output end of the voltage reduction module U12 is connected with the enabling end of the backlight controller U10 through a resistor R68, the overvoltage protection circuit comprises an NMOS tube Q11, the source electrode of the NMOS tube Q11 is grounded, the drain electrode of the NMOS tube Q11 is connected with the enabling end of the backlight controller U10, the grid electrode of the NMOS tube Q11 is connected with a first series voltage division circuit, the triode Q12 indirectly controls power supply of the voltage reduction module U12 by controlling the on-off state of the triode Q14, and the voltage reduction module U12 indirectly controls the power supply of the backlight controller U10. An NMOS tube Q11 and a first series voltage division circuit in the overvoltage protection circuit are used for monitoring the voltage of a power supply VCC1 in real time. When the voltage is too high, the NMOS tube Q11 is switched on, the enabling end voltage is directly lowered, and work is stopped, so that overvoltage protection is achieved.

The invention discloses a low-dropout linear voltage regulator which is totally divided into three parts, the first part is an error amplifier, and it is guaranteed that the output voltage of the low-dropout linear voltage regulator is kept unchanged under different load currents; the second part is a source following current output stage, the output current is divided into two branches, one branch is supplied to the base electrode of an NPN triode, and the other branch is supplied to a first NMOS tube connected with a diode; and the third part is a zero point tracking part, the principle of the zero point tracking part is to obtain a current which is proportional to the current flowing to the base electrode of the NPN triode so as to obtain a zero point, and the frequency of the zero point is increased along with the increase of the load current for frequency compensation. The three parts, a power NPN triode, a partial pressure feedback resistor and a plug-in capacitor form a whole circuit. According to the invention, the driving current can reach the ampere level, the requirement of the whole circuit on the value of the equivalent series resistance of the external capacitor is reduced, and the resistance value range of the equivalent series resistance of the external capacitor is expanded.

Systems and methods are provided for generating a stable reference current that has low sensitivity to operating temperature and supply voltage variations and is stable across process corners. In an example implementation, an improved reference current generator circuit is provided that includes a first circuit generating a first current that is proportional to absolute temperature and a second circuit generating a second current that is complementary to absolute temperature based on first transistors operating in respective triode regions. The second current compensates for process, voltage, and temperature variations in the first current at a node. According to some examples, the second current is also generated based on second transistors operating in respective saturation regions. The first current may be generated using a forward biased PN junction diode.

The utility model relates to the related field of voltage reference circuits, in particular to a voltage reference circuit with a simple structure and capable of realizing high-voltage application, which comprises a resistor R5 connected with a high-voltage power supply, MOS (Metal Oxide Semiconductor) transistors PM1, PM2 and PM3, triodes Q0, Q1 and Q2, and MOS transistors NM0 and NM5, compared with a traditional structure, the circuit is simple in structure and easy to implement, and due to the fact that an operational amplifier and a band-gap reference circuit are not needed, and the number of electronic components is small, the circuit area is greatly reduced; the high-voltage-resistant voltage-reducing and voltage-stabilizing circuit is simple in structure, low in process requirement, free of a high-voltage process and free of additional special devices, adopts a low-voltage process to enable the circuit to generate a low-voltage reference capable of bearing a high-voltage power supply of more than 100V, achieves the purposes of high-voltage resistance, voltage reduction and voltage stabilization, and has the characteristics of low cost and convenience in design, so that the high-voltage-resistant voltage-reducing and voltage-stabilizing circuit has very high use value and application value and is suitable for popularization.

The utility model discloses an anti-reverse connection and anti-backflow circuit with an enabling function, comprising a main power supply module used for providing a DC input voltage; the micro-control unit is used for detecting the input voltage and the output voltage and generating an enabling control signal; the enabling switch circuit comprises two MOS (Metal Oxide Semiconductor) transistors which are reversely connected in parallel and is used for controlling the on and off of the circuit according to the enabling control signal; and the control module comprises a triode and is used for receiving an enabling control signal from the micro-control unit. According to the utility model, the MOS transistor and the triode which are reversely connected in parallel are used for controlling the circuit, so that safe and reliable control of a battery or a high-capacity load is realized, the functions of reverse connection prevention and backflow prevention are realized, the problems of a relay are solved, the integration level and reliability of the circuit are greatly improved, and the reliability of the circuit is improved. The method is suitable for various power supply management applications requiring high safety and high reliability.

The utility model relates to a rear-phase-cut single-live-wire type wall light modulator, which comprises an MOS (Metal Oxide Semiconductor) tube switch loop unit, a singlechip control unit and a direct-current power supply unit, the MOS tube switch loop unit comprises a wiring terminal J2 connected with an MOS tube Q1, a grid electrode of the MOS tube Q1 is connected with four resistors in series in sequence and then is connected with an MOS tube Q2, a drain electrode of the MOS tube Q2 is connected with a diode D2, the diode D2 is connected with a diode D1, a fixed end contact of a single-pole double-throw switch is connected with the MOS tube Q2, and two movable end contacts of the single-pole double-throw switch are connected with the wiring terminal J1 and the wiring terminal J3 respectively; the direct-current power supply unit comprises an alternating-current voltage waveform acquisition circuit, a direct-current voltage drop circuit, an overcurrent protection circuit and a filtering voltage stabilizing circuit; according to the single-chip microcomputer control unit, a linear sliding potentiometer is connected with the PC2 end of a single-chip microcomputer after being connected with a resistor in series, the linear sliding potentiometer and a rotary potentiometer are sequentially connected between the output end of the direct-current power supply unit and the ground in series, a triode Q6 is connected with a triode Q5 and then connected with the collector electrode of a triode Q7, and the base electrode of the triode Q7 is connected with the PA6 end of the single-chip microcomputer after being connected with a resistor in series.

The application relates to a high-order curvature compensation band gap reference circuit, which comprises a first-order band gap reference circuit, a high-temperature region curvature compensation circuit and a starting circuit. The first-order band gap reference voltage is realized by the following technologies: the voltage generated by the current of PMOS tube M4 on resistors R3-R4 and the voltage generated by the current of PMOS tube M6 on resistor R4 both have positive temperature coefficients, the voltage generated by the current of PMOS tube M5 on resistors R3-R4 and the voltage generated by the current of PMOS tube M7 on resistor R4 both have negative temperature coefficients; the working area of NMOS tube M13 gradually changes from the deep triode region, the triode region to the saturation region with the increase of temperature by controlling the working of NMOS tube M13 by the technology that the gate voltage of NMOS tube M12 increases with the increase of temperature, so that the current of PMOS tube M14 is high-order nonlinear with temperature, and the first-order band gap reference voltage is temperature compensated, thereby obtaining the high-order temperature compensation band gap voltage.

The invention provides a numerical control delayer, a four-digit numerical control delayer and a manufacturing method of a chip of the four-digit numerical control delayer. The delayer comprises a first single-pole double-throw switch, a second single-pole double-throw switch, a delay unit and a reference unit, the first single-pole double-throw switch comprises two stages of triodes S1 and S2 which are connected in parallel; the second single-pole double-throw switch comprises a triode S3 and a triode S4 which are connected in parallel; one end of the delay unit is connected with the drain electrode of S1, and the other end is connected with the drain electrode of S3; one end of the reference unit is connected with the drain of S2, and the other end is connected with the drain of S4; drain electrodes of the S1 and the S2 are connected with a radio frequency signal input port; drain electrodes of the S3 and the S4 are connected with a radio frequency signal output port; source electrodes of the S1, the S2, the S3 and the S4 are all in direct current grounding, grid electrodes of the S1, the S2, the S3 and the S4 are all connected with a voltage control unit, and on and off of each triode are controlled by controlling grid electrode voltage, so that the delayer is switched between a reference state and a delay state. According to the invention, the insertion loss of the delayer in the millimeter wave frequency band can be reduced.

The invention discloses a low-temperature-drift band-gap reference source circuit. The low-temperature-drift band-gap reference source circuit comprises a starting circuit, a PTAT current generating circuit, a CTAT current generating circuit and an output circuit. The PTAT current generation circuit is used for generating positive temperature coefficient current, and adopts a power supply voltage isolation structure consisting of two PMOS (P-channel Metal Oxide Semiconductor) tubes and two NMOS (N-channel Metal Oxide Semiconductor) tubes to isolate the interference of power supply voltage; the CTAT current generating circuit is used for generating a negative temperature coefficient current and adopts a clamping structure consisting of two triodes, so that the CTAT current generating circuit is not influenced by a power supply voltage; and the output circuit is used for outputting low-temperature-drift reference current and / or voltage. An operational amplifier clamping structure is not used, the complex structure of an integrated operational amplifier is omitted, the circuit structure is simplified, the area and power consumption are reduced, the influence of offset voltage of the integrated operational amplifier can be avoided, and practicability is high. In addition, the reference circuit further comprises a temperature compensation circuit, temperature high-order compensation is carried out through a feedback network formed by two resistors, and the reference current and the reference voltage are more accurate.

The invention discloses a novel heterogeneous neuron memristor coupling model and circuit. A resistor, a capacitor, a triode, an operational amplifier, a multiplier, a direct current voltage source and a direct current source construct five circuit paths, namely a hyperbolic tangent simulation equivalent circuit and a hyperbolic tangent memristor simulation equivalent circuit. The calculation result of the coupling network shows that the network does not have a balance point, and the network shows hidden dynamic behaviors. The coupling network can generate five stable discharge modes such as periodic peak, chaotic peak, random bursting, chaotic bursting and periodic bursting. Due to the fact that different discharging modes can control the system to show different behavior modes, the circuit has important value for development of a bionic system.

The invention relates to the technical field of power electronics, and provides a power supply slow start circuit and power supply equipment based on triode control, the slow start circuit comprises a power supply, a switch module, a load and a slow start control module, the power supply, the switch module and the load form a power supply loop, the slow start control module is connected with the power supply and the switch module, when the power supply powers on a load, a triode in the slow start control module is controlled to be in an amplification region, and the driving current of the switch module is shunted, so that the duration of the switch module in a Miller platform is prolonged; and the switch module is in a complete conduction state, so that the slow start of the load is realized. According to the slow start circuit, the conduction degree of the switch module can be controlled through the triode, and the duration of the switch module on a Miller platform is prolonged, so that surge suppression of load energizing current is realized, the adaptability is high, the interference resistance is strong, and the circuit stability is improved.

The invention belongs to the field of electronic circuits, and provides an excitation control system based on a passive and wireless ultrasonic transducer, which is characterized in that a first transmitting circuit receives a high-frequency excitation signal and generates a high-frequency electromagnetic wave signal after power amplification; the pulse excitation circuit based on the PNP triode rectifies the received high-frequency electromagnetic wave signal and stores energy, and generates an instantaneous pulse excitation signal; the second transmitting circuit receives the high-frequency carrier signal, provides the high-frequency carrier signal to a passive wireless ultrasonic transducer end after power amplification, and sends a demodulation reference signal to the receiving circuit; the passive wireless ultrasonic transducer end excites a low-frequency ultrasonic signal of which the frequency is the same as the resonant frequency, and after the high-frequency carrier signal is received, the low-frequency ultrasonic signal and the high-frequency carrier signal are subjected to frequency mixing modulation to obtain a high-frequency modulation signal; and the receiving circuit filters and amplifies the high-frequency modulation signal and then performs frequency mixing demodulation on the high-frequency modulation signal and a demodulation reference signal to obtain a low-frequency ultrasonic sensing signal. The power of the ultrasonic transducer can be improved.

The invention relates to the technical field of high-voltage integrated circuits, in particular to a high-precision temperature detection module and a high-voltage integrated circuit with the high-precision temperature detection module. The current correction circuit comprises a resistor R3a, a resistor R3b, an MOS tube M3 and a triode Q3; one ends of the R3a and the R3b are connected with an operational amplifier OP of the reference current source circuit, and the other ends of the R3a and the R3b are connected with the MOS tube M3; the MOS tube M3 is respectively connected with a reference current source circuit VCC power supply and the MOS tube M2; and the Q3 is respectively connected with the other ends of the R3a and the R3b and the M3. According to the invention, constant current with zero temperature coefficient is output, so that a temperature detection result is more accurate, effective temperature protection of the HVIC can be realized, an integrated intelligent power driving chip of a high-voltage integrated circuit and an application system of the integrated intelligent power driving chip are prevented from being damaged by high temperature, and the reliability of the intelligent power driving chip HVIC is improved.

The invention discloses an overcurrent protection circuit, a driving chip and an intelligent power module wherein the overcurrent protection circuit comprises a first triode, a second triode, a sampling resistor, a first feedback resistor, a second feedback resistor, a first comparator, a second comparator, a first NOT gate, a first NAND gate and a blanking circuit. And the blanking circuit is used for eliminating noise interference of the driving chip. According to the overcurrent protection circuit, signal amplification is carried out through the first triode and the second triode at the preceding stage, then comparison is carried out through the first comparator and the second comparator, so that the comparison result is more accurate, and finally noise interference is eliminated through the blanking circuit; therefore, the condition of false triggering protection of the overcurrent protection circuit due to noise interference can be avoided.

The invention discloses a driving circuit of a tunable laser, which comprises a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor, a tenth resistor, a first operational amplifier, a second operational amplifier, a third digital potentiometer, a fourth operational amplifier, a first triode and a first voltage stabilizing diode, one end of the first resistor and one end of the fourth resistor are connected with a power supply, the other end of the first resistor is connected with the cathode of the first voltage stabilizing diode and the in-phase end of the second operational amplifier, and the anti-phase end of the second operational amplifier is connected with one end of the second resistor and one end of the third resistor. The output end of the second operational amplifier is connected with the other end of the second resistor and the anti-phase end of the first operational amplifier, the output end of the first operational amplifier is connected with one end of the tenth resistor and a second pin of the third digital potentiometer, and a seventh pin of the third digital potentiometer is connected with one end of the fifth resistor.

The invention provides a rear-phase-cut single-live-wire type wall light modulator. The rear-phase-cut single-live-wire type wall light modulator comprises an MOS tube switch loop unit, a single-chip microcomputer control unit and a direct-current power supply unit. Wherein the direct current power supply unit comprises an alternating current voltage waveform acquisition circuit, a direct current voltage drop circuit, an overcurrent protection circuit and a filtering voltage stabilizing circuit. The single-chip microcomputer control unit comprises a single-chip microcomputer, a potentiometer, a triode Q6, a triode Q5 and a triode Q7, the PC2 end of the single-chip microcomputer is connected with the potentiometer, when the resistance value of the potentiometer changes, the voltage collected by the PC2 end changes, and the PA6 end of the single-chip microcomputer outputs different voltage signals to control the on-off of the triode Q6, the triode Q5 and the triode Q7 so as to adjust the on-off time of the MOS tube; the output end of the alternating current voltage waveform acquisition circuit is connected with a PC1 port of the single chip microcomputer to provide a phase reference; after alternating current passes through the direct current power supply unit, 5V direct current is output and is connected with a VDD end of the single chip microcomputer to supply power to the single chip microcomputer; the light modulator can stably modulate light at low brightness.

The utility model discloses a power supply input surge protection and isolation device, which comprises a piezoresistor, a surge decoupling power resistor and a TVS (Transient Voltage Suppressor) tube which are sequentially connected in series, and a self-adaptive surge control circuit which is connected with the surge decoupling power resistor in parallel, when surge overvoltage occurs, the TVS tube is firstly broken down, and transient large current flows through the adaptive surge control circuit; the surge decoupling power resistor is used for enabling the passing surge current to generate relatively large voltage drop after the TVS tube is broken down; the self-adaptive surge control circuit comprises a first MOS tube which is used for conducting transient large current passing through a TVS (Transient Voltage Suppressor) tube; when the voltage drop on the MOS tube is greater than the breakdown voltage of the voltage-regulator tube, the voltage-regulator tube is broken down to trigger the conduction of the triode; when the voltage-regulator tube is broken down, the triode is conducted, so that the GS voltage drop of the first MOS tube is reduced, and the first MOS tube is turned off; when the sum of the clamping voltage of the TVS tube end and the voltage drop of the surge decoupling power resistor exceeds the minimum action voltage of the piezoresistor, the piezoresistor acts, so that high-energy transient interference flows through the piezoresistor, and surge protection is realized. According to the utility model, the surge protection and isolation protection functions of the input end of the power supply can be effectively realized, and the safety and stability of the use of the power supply are ensured.

A direct current surge protection module is provided with a filter circuit and a surge control circuit, the filter circuit is provided with an input end, and the filter circuit is used for eliminating high-frequency interference signals of high-voltage direct current input into the filter circuit; high-frequency interference signals of direct-current input voltage can be filtered out through the filter circuit, then the direct-current input voltage is transmitted to the surge control circuit, surge over-voltage and under-voltage control is completed by means of the surge control circuit in cooperation with a triode Q1, a triode Q2 and a sampling resistor R1, and auxiliary 24V power supply is directly output through a reverse connection prevention function and an overcurrent protection function.

The embodiment of the invention provides a power driving circuit, and relates to the technical field of vehicles. The device is suitable for the technical field of various new energy vehicles such as electric vehicles, hybrid power vehicles and fuel cell vehicles. The circuit comprises a power supply, a sampling resistor, an MOS tube, a current monitoring unit, a comparator, a triode and a micro-control unit. The power supply is connected with the MOS tube through the sampling resistor, and the MOS tube is used for being connected with a power load; the sampling resistor is connected with a first signal input end of the micro-control unit through the current monitoring unit, and a second signal input end of the micro-control unit is connected with an output end of the MOS tube; the output end of the current monitoring unit is connected with the input end of the comparator, the output end of the comparator is connected with the input end of the triode, and the output end of the triode is connected with the MOS tube. The method provided by the invention effectively solves the problems that the cost of power driving power is relatively high and the protection requirement of the domain control device cannot be met in the prior art.

The invention provides an anti-backflow protection circuit. The anti-backflow protection circuit comprises a power supply, a starting module, a reference module, a comparison module, an anti-backflow module and an acquisition module, the anti-backflow module comprises a first MOS (Metal Oxide Semiconductor) tube, a second MOS tube, a third MOS tube, a triode and a voltage stabilizing diode; the drain electrode of the first MOS tube is connected with a power supply, the source electrode of the first MOS tube is connected with the source electrode of the second MOS tube, the drain electrode of the second MOS tube is connected with the negative electrode of the voltage stabilizing diode, the grid electrode of the first MOS tube is connected with the grid electrode of the second MOS tube, the positive electrode of the voltage stabilizing diode and the collector electrode of the triode, and the grid electrode of the first MOS tube, the grid electrode of the second MOS tube, the positive electrode of the voltage stabilizing diode and the collector electrode of the triode jointly serve as the output end of the anti-backflow module to be connected to the acquisition module; the base electrode of the triode is connected with the grid electrode of the third MOS tube and is connected to the comparison module as the input end of the anti-backflow module. The power consumption is small, the heat dissipation is low, the reference voltage is stable, the response speed is high, and the anti-noise capability is high.

The invention provides a unidirectional ultra-low voltage electrostatic protection device which comprises a TVS main device and a low voltage trigger unit, the TVS main device comprises an N-type heavily doped substrate and a P-type epitaxial layer, and a first P + heavily doped active region, an N + heavily doped active region and a second P + heavily doped active region are arranged in the P-type epitaxial layer. The first P + heavily-doped active region, the N + heavily-doped active region and the second P + heavily-doped active region are matched with one another to form an NPN-type triode, the lower surface of the N-type heavily-doped substrate can be connected with a first I / O port, the N + heavily-doped active region and the second P + heavily-doped active region can be connected with a second I / O port, and the low-voltage trigger unit is arranged between the first I / O port and the first P + heavily-doped active region. The low-voltage trigger unit can rapidly conduct a PN junction formed by the first P + heavily-doped active region and the N + heavily-doped active region in a positive bias mode. The electrostatic protection device has the beneficial effect that the turn-on voltage of the electrostatic protection device can be reduced.

The embodiment of the invention provides a magnetic isolation feedback circuit which comprises an error amplifier unit, a modulator unit and a demodulator unit. The magnetic isolation feedback circuit is used for transmitting an error signal of an output voltage sampling signal Vos of a secondary side of the LLC resonant triode converter to a primary side of the LLC resonant converter so as to control the duty ratio of a first primary side switching tube QH and a second primary side switching tube QL of the LLC resonant converter; the error amplifier unit is used for amplifying an error signal of the output voltage sampling signal Vos to generate an amplified error signal; the modulator unit is used for modulating the input amplified error signals into square wave signals with the same amplitude; and the demodulator unit is used for demodulating the modulated square wave signal into a direct current signal with the same amplitude. According to the scheme, the forward converter is used as a modulator, so that a magnetic isolation feedback circuit with good temperature characteristics and radiation resistance characteristics is provided.

The utility model relates to audio equipment and a control circuit thereof for automatically cutting off output when no signal exists, the control circuit for automatically cutting off output when no signal exists comprises a pre-stage control circuit and a switch unit connected in series between a power amplifier circuit and a loudspeaker; the pre-stage control circuit comprises a polar capacitor C20, a first operational amplifier, a first voltage stabilizing diode, a resistor R27, a diode D3, a triode Q4, a triode Q5, a resistor R31, a resistor R32, a resistor R34, a diode D6, a polar capacitor C21 and a second operational amplifier; the switch unit is configured to connect or disconnect the power amplifier circuit and the loudspeaker based on the received high and low level signals output by the second operational amplifier; when no signal exists, the connection between the power amplifier circuit and the loudspeaker is cut off, so that the loudspeaker is in a mute state, and noise is not generated when the audio equipment stops performance in a power-on state; and the cost is low, the design is simple, and the development period is shortened.

The invention provides a parasitic leakage compensation circuit for a high-voltage diode and a CAN transceiver, and the circuit comprises a first diode; the emitter of the triode is connected with the anode of the first diode, and the base of the triode is connected with the cathode of the first diode; the drain of the transistor is connected with the cathode of the first diode, and the grid of the transistor is connected with the anode of the power supply; one end of the current mirror is connected with the source electrode of the transistor, and the other end is grounded; one end of the first switch is connected with a first node between the source electrode of the transistor and the current mirror, and the other end of the first switch is connected with a second node; one end of the second switch is connected with the second node, and the other end of the second switch is connected with a NOT gate; one end of the capacitor is connected with the second node, and the other end is grounded. According to the invention, a parasitic device of the high-voltage diode can be charged by adopting a capacitor nonlinear discharge mode, so that the electric leakage phenomenon of a parasitic triode of the device is blocked, and the circuit is effectively protected.

The invention discloses a high-order curvature compensation band-gap reference circuit. The high-order curvature compensation band-gap reference circuit comprises a first-order band-gap reference circuit, a high-temperature area curvature compensation circuit and a starting circuit. The first-order band-gap reference voltage is realized by adopting the technologies that the voltage generated by the current of a PMOS (P-channel Metal Oxide Semiconductor) tube M4 on resistors R3 to R4 and the voltage generated by the current of a PMOS tube M6 on the resistor R4 have positive temperature coefficients, and the voltage generated by the current of a PMOS tube M5 on the resistors R3 to R4 and the voltage generated by the current of a PMOS tube M7 on the resistor R4 have negative temperature coefficients. The technology that the grid voltage of an NMOS tube M12 is increased along with temperature rise to control an NMOS tube M13 to work, and the working area of the NMOS tube M13 is gradually transited to a saturation area from a deep triode area and a triode area along with temperature rise is utilized, so that the current of a PMOS tube M14 is in temperature high-order nonlinearity, and temperature compensation is performed on first-order band-gap reference voltage; therefore, the band-gap-based voltage with high-order temperature compensation is obtained.

The invention relates to the technical field of wireless communication, and provides a radio frequency power amplifier which comprises a power amplifying circuit, a first biasing circuit, a second biasing circuit and a feedback circuit. The first biasing circuit comprises a first resistor, a first voltage division circuit and a first triode, the first end of the first resistor is used for being connected to an external first power supply, and the second end of the first resistor is connected with the first end of the first voltage division circuit and the base electrode of the first triode; the second biasing circuit comprises a second resistor, a second voltage division circuit and a second triode; the first end of the second resistor is connected with the second end of the first resistor, the second end of the second resistor is connected with the second voltage division circuit and the second triode, and the second triode is connected with the feedback circuit and the power amplification circuit. According to the radio frequency power amplifier, power amplifier gain and linear performance fluctuation caused by temperature change can be reduced, and simplified circuit layout and smaller chip area occupation can be realized.

The invention provides an implementation method for measuring the ignition resistance of an industrial electronic detonator, which belongs to the technical field of resistance measurement, and comprises the following steps: the measurement of the ignition resistance of the industrial electronic detonator is realized based on a detection circuit, the detection circuit comprises an MCU microcontroller U1, a single-pole double-throw physical relay U2, a relay change-over switch triode Q1, a divider resistor R1 and a divider resistor R2 of the measurement circuit, and a dual-path integrated operational amplifier. The test state of the ignition resistor is switched based on a single-pole double-throw physical relay U2 and a relay change-over switch triode Q1; a millivolt-level weak signal is output to a measuring circuit based on the MCU microcontroller U1, and specific voltage values of a point A and a point B corresponding to the divider resistor R1 and the divider resistor R2 in different test states are controlled; the specific voltage values of the point A and the point B are amplified by the same multiple based on the integrated operational amplifier of the two paths, so that the current value flowing through the measuring circuit is calculated, the ignition resistance value is calculated, and the measuring precision is effectively guaranteed.

The invention discloses a silicon carbide driving and power adjusting circuit which comprises a single-chip microcomputer U1, a resistor R23, a resistor R44, a resistor R43, a resistor R15, a resistor R36, a resistor R39, a resistor R37, a capacitor C26, a capacitor C27, a triode N1, an MOS tube N2 and toggle switches CON3 + CON2 + CON1, the resistor R23 and the capacitor C23 are connected to 5V, the resistor R21 is connected to 15V, the resistor R44, the resistor R45 and the resistor R36 are connected to a collector electrode of the triode N1, the resistor R15 is connected to an emitter electrode of the triode N1, and the resistor R37 is connected to an emitter electrode of the triode N1. According to the silicon carbide electric welding machine, 70-100 KHz PWM signal conversion and electric welding machine power adjustment can be achieved, and the requirements of different users for power adjustment of the silicon carbide electric welding machine are met.

The utility model discloses a triode device based on a single double-walled carbon nanotube structure. The triode device comprises a single double-walled carbon nanotube; an inner-layer carbon nanotube of the double-walled carbon nanotube is provided with a source electrode and a drain electrode which are made of a boron-doped P-type material, and a field effect transistor channel is formed between the source electrode and the drain electrode; an outer-layer carbon nano tube of the double-wall carbon nano tube forms a grid electrode through axial cutting and has the property of an N-type material; and the P-N junction is formed between the P-type material and the N-type material. According to the triode device, nanoscale high integration is realized, the interface and contact resistance problems of a traditional single-walled carbon nanotube field effect transistor are solved, the challenge of material coupling is avoided, the size of the device is reduced, and the nanoscale limitation of the prior art is broken through. The device adopts a single material, so that the uniformity and controllability are enhanced, the current driving and electrical properties are improved, the characteristics of low power consumption and quick response are shown, and the device is suitable for novel photoelectric and flexible electronic devices.

The invention discloses a low-voltage adjustable current surge suppressor supporting rapid and continuous power-on, and belongs to the technical field of surge current suppression, the suppressor comprises a main power loop, a reference circuit, a control circuit and a voltage stabilizing circuit, the main power loop is composed of a sampling resistor and a power MOS tube which are connected in series, the reference circuit divides the auxiliary source voltage and then generates a reference source which can be used by the operational amplifier chip, the control circuit comprises the operational amplifier chip and a triode, and the voltage stabilizing circuit is used for protecting the MOS tube. Compared with the prior art, the suppressor combines the characteristics of an RC charging circuit, adopts an insulated gate field-effect tube to replace a resistor to penetrate into a main power loop, achieves the purpose of suppressing current by controlling the gate voltage of an MOS tube and controlling the conduction depth of the MOS tube, and can adjust the maximum surge current value by presetting the auxiliary source voltage at the same time. The surge protection circuit has the advantages of simple structure, quick and frequent starting, adjustable surge current, low power consumption, low failure rate and the like.