253 results about "Voltage spike" patented technology

The invention relates to the technical field of fault diagnosis of power electronic equipment, and particularly discloses a fault analysis and diagnosis method and system for a mining high-voltage frequency converter, and the method comprises the steps: collecting the skin effect depth and parasitic parameter drift distance in real time under a high-frequency working condition through a multi-physics field sensor array; constructing three-dimensional current density distribution of the conductor based on a non-Euclidean space mesh generation technology, and dynamically correcting the equivalent resistivity of the conductor in combination with a metamaterial database to calculate a dynamic eddy current loss characteristic value; optimizing and solving the parasitic parameter time-varying evolution equation by using a quantum annealing algorithm to obtain a voltage peak sensitivity characteristic value; inputting the characteristic value into a pre-trained deep residual shrinkage network diagnosis model for multi-modal fusion analysis, and outputting a fault risk assessment result; according to the method, the problem of parasitic parameter time-varying characteristic modeling in the vibration environment is innovatively solved, and early warning of hidden faults is achieved.

The invention relates to the technical field of overvoltage control, and particularly discloses an overvoltage control method and device for an IGBT module, and the method comprises the steps: carrying out the time sequence correlation analysis of collector current time sequence data through employing a deep learning algorithm after receiving a turn-off instruction, extracting the short-time fluctuation characteristics of collector current, and obtaining the short-time fluctuation characteristics of the collector current; and the initial gate resistance value is combined to dynamically predict the collector-emitter voltage peak amplitude possibly generated in the turn-off process. And based on comparison between the predicted voltage spike amplitude and a preset threshold value, an initial gate driving strategy is generated to guide the turn-off operation. In the turn-off execution stage, collector-emitter voltage data flow is monitored in real time and dynamically compared with a safety threshold value, and therefore closed-loop optimization adjustment is conducted on a driving strategy. According to the method, prospective evaluation and self-adaptive control of the overvoltage risk are realized through intelligent prediction of the turn-off transient voltage spike, the switching loss can be optimized while the overvoltage is suppressed, and the limitation of traditional fixed parameter control is broken through.

The present invention discloses a radar monitoring and early warning method for open-pit mine slope stability, which relates to the technical field of geological disaster monitoring and early warning. It is used to solve the problem that existing slope radar monitoring is greatly affected by electromagnetic interference and is difficult to achieve accurate and stable real-time early warning. By obtaining the position information of the radar and the mine edge to be measured and generating a monitoring distance, the echo intensity is measured to calculate the initial reflectivity, and the radar deployment position is dynamically adjusted according to the required echo intensity. After updating the position information, multiple time periods are set to send radar signals of different frequencies. At the same time, the number of wireless devices and power supply fluctuations in the area are monitored, and the voltage spikes are extracted by using the power fluctuations of the wireless devices. The electromagnetic interference intensity is comprehensively analyzed in combination with the number of devices. The reflection change score is integrated based on the multi-frequency echo signal. The current reflectivity is calculated based on the radar echo according to the score screening standard, and compared with the initial reflectivity to determine whether an alarm is issued, thereby significantly improving the real-time and reliability of the slope instability early warning.

The invention discloses an optimized virtual vector modulation strategy of a T-type three-level inverter, which is characterized in that a sector is re-divided based on the virtual vector modulation strategy, a synthesis mode of a virtual vector is optimized, a low-amplitude common-mode voltage vector is adopted to synthesize the virtual vector, on one hand, common-mode voltage generated by the inverter can be inhibited, and on the other hand, the common-mode voltage generated by the inverter can be inhibited; and on the other hand, the optimized modulation method does not influence the neutral point potential, the smoothness of the direct output voltage of the inverter is improved, the voltage quality is improved, and the method has the advantages of low harmonic content of the output current and the like. In addition, the method solves the problems of inverter output voltage distortion, common-mode voltage spike and the like caused by a dead zone effect through a voltage vector compensation method, and has guiding significance for improving the reliability of a photovoltaic system and a micro-grid system.

The invention discloses a power module. The power module comprises a direct current busbar, a radiator, an IGBT module I and an IGBT module II, the IGBT module I and the IGBT module II are respectively arranged on a mounting surface I and a mounting surface II of the radiator; the direct-current busbar comprises a direct-current busbar I, a direct-current busbar II, a direct-current busbar III and a direct-current busbar IV; the two ends of a fourth direct-current busbar are connected with the first IGBT module and the second IGBT module respectively, and the middle of the fourth direct-current busbar is connected with the middle of a third direct-current busbar. The two ends of the direct current busbar III are respectively connected with the direct current busbar I and the direct current busbar II; the direct current busbar I and the mounting surface I as well as the direct current busbar II and the mounting surface II are oppositely arranged and parallel to each other; the first direct current capacitor assembly is connected with the first direct current busbar, and the second direct current capacitor assembly is connected with the second direct current busbar. The influence of stray inductance is reduced by optimizing a current path, and the voltage spike at the switching moment is reduced due to the reduction of the stray inductance, so that the switching loss is reduced.

While programming a first set of memory cells, a non-volatile memory apparatus determines an initial magnitude of a programming signal for a second set of memory cells based on testing during the programming of the first set of memory cells. The testing comprises sensing at a first test voltage level and sensing at a second test voltage level without apply a voltage spike between the two sensing operation. Removing the voltage spike results in a performance increase (i.e. faster programming speed) and as well as a decrease in power usage.

A power converter incorporating a synchronous rectifier implements adaptive turn-off voltage control for fast turn-off of the synchronous rectifier in the continuous conduction mode. In some embodiments, the synchronous rectifier turn off detection threshold is adaptively changed as a function of the detected operation mode of the power converter. In response to detecting the power converter being operated in the continuous conduction mode, the synchronous rectifier turn off detection threshold is set to a voltage value farther away from zero volt as compared to the nominal turn off detection threshold. In this manner, the synchronous rectifier can be turned off earlier while in the continuous conduction mode. When the synchronous rectifier can be turned off quickly, large reverse current or negative current as well as large drain voltage spike at the synchronous rectifier can be avoided. The reliability of the synchronous rectifier and the power converter is improved.

The invention discloses a SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device structure for optimizing switching characteristics and a preparation method thereof, and provides a silicon carbide MOSFET device for reducing reverse output capacitance Crss, increasing input capacitance Ciss and increasing output capacitance Coss to improve Crosstalk voltage spike and a preparation method thereof. By introducing the composite gate oxide structure, the high-K material passivation layer and the P + structure at the bottom of the P-WELL into the planar silicon carbide MOSFET device, the reverse output capacitance Crss can be effectively reduced, the input capacitance Ciss can be increased, the output capacitance Coss can be increased, and finally, the Vgs voltage peak in the Crosstalk turn-off process can be effectively improved, and the performance of the device is improved. The breakdown and burnout of the device caused by overhigh voltage in the on-off process of the device are prevented, and the service life of the device is prolonged. Besides, the device structure and the preparation method are simple, and the effect is remarkable, so that high-performance and batch preparation and production can be realized, and the device has huge market potential and wide application prospects.

The invention belongs to the technical field of motor driving control, and discloses a space vector modulation strategy method for a permanent magnet synchronous motor, which comprises the following steps of: searching a region division and vector arrangement table by using regions in which Vlp and V are positioned to obtain an optimal vector sequence, and arranging vectors based on a principle of eliminating a peak of a CMV and minimizing switching operation times; and finally, calculating the duty ratio of a plurality of effective voltage vectors used for synthesizing the next period according to the amplitude-second balance principle. Compared with a control strategy that only one effective vector or two adjacent effective vectors are used in each control period, the virtual vector synthesized by the method is the same as the reference vector, and common-mode voltage spikes can be eliminated by the method; compared with NSPWM and AZPWM, the method has the advantages that area division and vector sorting are reasonably arranged, so that the switching action times are minimized, the switching loss is reduced, and the inverter efficiency is improved.

The utility model discloses a DC power supply input protection circuit. The transient absorption circuit is used for absorbing transient voltage spike pulse generated by input voltage of the power supply; the voltage stabilizing circuit is used for generating stable voltage when the power supply is input in a wide voltage range; the second voltage division circuit and the power supply output control switch circuit are connected in parallel and are arranged between the power supply input end and the power supply output end of the direct-current power supply, and the first voltage division circuit can divide the stable voltage generated by the voltage stabilizing circuit; the first voltage division circuit is connected with the in-phase end of the comparator to provide reference voltage for the comparator, the second voltage division circuit is connected with the anti-phase end of the comparator to provide input voltage for the comparator, and the comparator can compare the reference voltage with an input voltage signal. When the input voltage is higher than the reference voltage, the output end of the comparator outputs a signal for controlling the switching circuit to close to the power supply. The overvoltage protection circuit is sufficient and accurate in overvoltage protection, can be applied to a relatively wide voltage range, and is low in cost.

The invention discloses a nanosecond steep pulse excitation system and a nanosecond steep pulse excitation method. The nanosecond steep pulse excitation system comprises a high-voltage pulse generation module, a controller, an impedance detection module and a treatment electrode, the high-voltage pulse generation module is used for receiving a control signal monitored by the controller and outputting a high-voltage pulse to the treatment electrode; the impedance detection module comprises a measuring electrode, tissue impedance data are collected through the measuring electrode, and the impedance data are dynamically fed back to the controller; the controller dynamically adjusts parameters of the high-voltage pulse generation module according to impedance data to form closed-loop control, the Marx circuit is optimized, the high-voltage pulse generation efficiency is high, nanosecond-level accurate triggering is achieved through embedded control, effective deposition of high-frequency energy is ensured, transient voltage spikes are reduced, impedance changes are detected in real time through the impedance detection module, and the control precision is improved. The pulse width or amplitude is dynamically adjusted, pulse parameters are adjusted in real time based on impedance changes, and excessive ablation or insufficient treatment is avoided.

The invention provides a compensation output circuit, a driving circuit of a display panel and a display device.The compensation output circuit comprises a hysteresis circuit, a signal amplification circuit and a compensation circuit, and the hysteresis circuit delays first common electrode voltage output by a power management integrated circuit; the first common electrode voltage and the second common electrode voltage are output synchronously, meanwhile, the signal amplification circuit carries out signal amplification on the first common electrode voltage output in a delayed mode and outputs target voltage to the compensation circuit, and the compensation circuit generates compensation voltage according to the target voltage and the second common electrode voltage obtained through feedback. The first common electrode voltage and the second common electrode voltage are synchronously output to the compensation circuit for compensation processing through the hysteresis circuit and the signal amplification circuit, so that generation of voltage spikes and startup splash screen are avoided, and the display effect is improved.

The embodiment of the utility model discloses a voltage spike absorption circuit and a whole vehicle power distribution system. The voltage spike absorption circuit comprises a first absorption circuit, a second absorption circuit, a third absorption circuit and an electronic relay module, the first end of the electronic relay module is connected with a first power supply, and the second end of the electronic relay module is connected with a second power supply or a load; the first absorption circuit is connected with the first end of the electronic relay module, the second absorption circuit is connected with the second end of the electronic relay module, and the third absorption circuit is connected between the first end and the second end of the electronic relay module. According to the technical scheme provided by the embodiment of the invention, the electronic relay module is connected with the first absorption circuit, the second absorption circuit and the third absorption circuit, so that when the electronic relay is turned off, the absorption circuits can effectively reduce voltage spikes generated in the circuit, protect other elements in the circuit from being damaged, and prolong the service life of system components.

The utility model belongs to the technical field of flyback switching circuits, and particularly discloses a flyback switching circuit which comprises a transformer T1 and a switching power supply chip U2, the primary side of the transformer T1 is connected with rectified voltage, the primary side of the transformer T1 is connected with a diode D6 and a diode D7 in parallel, the rectified voltage supplies energy to the switching power supply chip U2, and the diode D6 supplies energy to the switching power supply chip U2. A pin 7 of the secondary side of the transformer T1 is connected with a pin 6 of the switching power supply chip U2 through a diode D9 and a resistor R36, and the pin 7 of the secondary side of the transformer T1 is further connected with a pin 5 of the switching power supply chip U2 through a resistor R37. According to the utility model, reverse voltage tips are absorbed through the half-wave rectification filter circuit, jitter frequency control is carried out on the switching power supply chip U2 according to EM I signals, the whole circuit is convenient to stably output voltage, switching loss and current peaks during light load and even no load are reduced, loss of an auxiliary power supply is reduced, and an extra EM I filter device does not need to be provided for the auxiliary power supply.

The disclosure concerns a resonant LLC converter, comprising a transformer comprising a primary side and a secondary side; a primary side circuit comprising primary side switches connected to the primary side of the transformer; a secondary side circuit comprising secondary side switches connected to the secondary side of the transformer; and a control unit configured to control the primary side switches and the secondary side switches; wherein the control unit is configured to perform a steady-state operation where switching frequencies of the primary side switches and of the secondary side switches are controlled to regulate an output voltage of the converter; and the control unit is configured to perform an overshoot control operation where an output voltage spike during a load transient is reduced by setting a control signal for the secondary side switches to low or OFF. The invention also concerns a control method for driving the above-mentioned converter.

The utility model discloses a clamping plate type titanium-based composite anode structure which comprises a composite conductive beam, a conductive connecting plate, a titanium mesh, a titanium structure frame and a titanium bolt, the composite conductive beam is connected with the conductive connecting plate, and the conductive connecting plate is connected with the titanium mesh; the number of the titanium structure frames is two, and a plurality of bolt holes are formed in the titanium structure frames. The titanium bolts penetrate through the bolt holes to clamp and fix the titanium mesh between the two titanium structure frames; and the top end of the titanium structure frame is connected with the composite conductive beam and the conductive connecting plate. According to the clamping plate type titanium-based composite anode structure provided by the utility model, the titanium mesh is clamped and fixed by the two titanium structure frames through the clamping plate type structure, so that the bending deformation of the titanium mesh can be reduced; the condition of voltage increase or short circuit caused by titanium mesh deformation in the electrolysis process is avoided; and the disassembly cost of reutilization of the structural member is reduced.

The present invention belongs to the field of atmospheric pressure glow discharge and relates to a low-temperature plasma processing device controlled by a transverse magnetic field. The device comprises a power supply unit, a discharge unit with a built-in high-voltage spike electrode, an annular ground electrode, and an electromagnetic coil, a gas unit, a gas control unit, a magnetostrictive unit, and a sample unit for holding a treatment liquid or collecting gaseous products processed in the discharge unit. The discharge end of the high-voltage spike electrode is a pointed tip, and the radially inner side of the annular ground electrode is prefabricated with an axially symmetrical cut angle. A magnetic core is provided on the inner surface of the outer cylinder, and the magnetic core includes a first annular magnetic core and a second annular magnetic core. The device improves the efficiency of generating high-energy active particles in the low-temperature plasma by significantly increasing the discharge area. It can either utilize the discharge process of a specific dielectric gas to generate high-energy active particles for subsequent liquid treatment, or directly mix the gas to be treated with the dielectric gas in a certain proportion in the gas unit and then complete the treatment directly in the discharge unit.

The invention discloses a compact single-stage matrix AC-DC power conversion device and a control method thereof. The power conversion device comprises a power module, a switch matrix, a resonant cavity, a rectifying circuit, a first follow current branch and a second follow current branch, the power module is connected with the switch matrix, the resonant cavity is connected with the power module, the switch matrix comprises a first bridge arm and a second bridge arm, the midpoint of the first bridge arm is connected with one end of a primary winding of the resonant cavity, and the midpoint of the second bridge arm is connected with the other end of a secondary winding of the resonant cavity. The midpoint of the second bridge arm is connected with the other end of the primary winding of the resonant cavity, the first freewheeling branch is connected with the first bridge arm in parallel, the second freewheeling branch is connected with the second bridge arm in parallel, and the first freewheeling branch, the second freewheeling branch, at least part of the first bridge arm, at least part of the second bridge arm, the power module and the resonant cavity form a freewheeling channel. Two ends of the rectification circuit are connected with the secondary winding of the resonant cavity. The compact single-stage matrix type AC-DC power conversion device can effectively eliminate voltage spikes and reduce loss.

The utility model discloses a switching power supply and a power converter. The switching power supply comprises a transformer, a controller and a switching circuit, the switching circuit comprises at least two switching tubes which are connected in series; the first end of the primary winding of the transformer is connected with a direct-current source; the second end of the primary winding of the transformer is grounded through at least two switching tubes which are connected in series; a secondary winding of the transformer is used for supplying power to a load; the control end of the switching circuit is connected with the controller; the switching circuit further comprises absorption circuits corresponding to the switching tubes; the first end of the absorption circuit is connected with the drain electrode of the corresponding switch tube, and the second end of the absorption circuit is connected with the source electrode of the corresponding switch tube; the controller controls the on-off state of the at least two series-connected switch tubes. The plurality of switch tubes connected in series can divide the voltage, and the overheating and breakdown of the switch tubes caused by the reflection voltage and the peak voltage are avoided. And each switch tube adopts a switch tube with a common voltage-withstanding grade. And the absorption circuit balances the voltage of each switching tube and absorbs the voltage peak, thereby achieving a voltage-sharing effect.

A method for plasma processing a substrate includes: sustaining a plasma in a plasma processing chamber, the plasma processing chamber including a first electrode and a second electrode, where sustaining the plasma includes: coupling a source signal to the first electrode; and applying a bias signal to the second electrode, the bias signal having a spike waveform including a plurality of bias pulses, each of the bias pulses including a DC base voltage for a base duration and a triangular voltage spike having a rise time from the base voltage to a peak voltage and a fall time from the peak voltage to the base voltage, a sum of the rise time, the fall time, and the base duration including a pulse period, the applying including: independently adjusting the rise time and fall time to obtain a narrow energy spread of a mode at a high modal energy in an ion energy distribution function (IEDF) of an ion flux incident on the substrate, the narrow energy spread including a first width of the high energy mode of the IEDF that is smaller than a second width of the high energy mode of the IEDF obtainable using a rectangular pulse waveform.

A voltage controller (204) detects (604) a voltage spike (244) in an electrical signal received from an electrical power source (208). The voltage controller (204) is implemented using a single-loop control system in a stationary reference frame. The electrical signal includes voltage harmonics caused by a non-linear or unbalanced load (256). The voltage controller (204) includes a phase-compensated harmonic regulator (220) that regulates the voltage harmonics present in the electrical signal and receives a feedback voltage (240) of the single-loop control system. The feedback voltage (240) is a delayed version of an instantaneous voltage (236) of the electrical signal. The instantaneous voltage (236) is sub-transiently stabilized into a steady-state voltage (232) based on the feedback voltage (240). Sub-transiently stabilizing the instantaneous voltage (236) is performed within a single cycle after the voltage spike (244) is detected (604). The steady-state voltage (232) has a total harmonic distortion less than a threshold total harmonic distortion and the steady-state voltage has a balanced sinusoidal waveform.

The invention provides a power module, an electric drive assembly and a vehicle, and the power module comprises a plurality of sub-power modules, and each sub-power module corresponds to one phase; the number of the lining plates is multiple, each lining plate is provided with a reference surface, at least one sub-power module in the multiple sub-power modules is provided with one lining plate, and the sub-power modules are located in the reference surfaces; a plurality of direct current power terminals, the plurality of direct current power terminals and the plurality of lining plates are arranged in a one-to-one correspondence manner, the direct current power terminals are located in the reference surface, and the direct current power terminals are arranged at one ends of the lining plates; the number of the alternating current power terminals is multiple, and the multiple alternating current power terminals and the multiple lining plates are arranged in a one-to-one correspondence mode; and the plurality of capacitors are arranged in one-to-one correspondence with the plurality of lining plates, and the capacitors are located between the sub-power modules and the direct-current power terminals. According to the invention, the problem of how to effectively suppress the voltage spike in the switching process by the power module in the prior art is solved.

The present invention discloses a current-source high-frequency link matrix inverter topology with soft switching, comprising a sequentially connected power supply network, a current-source H-bridge, a series resonant tank, a high-frequency transformer, a matrix converter, a CL filter, and a load. The present invention uses series resonance to match the leakage inductance current of the high-frequency transformer with the DC-side input current, thereby avoiding large voltage spikes on the primary side of the high-frequency transformer and achieving zero-current switching of the current-source H-bridge. The present invention is also well-suited for high-frequency transformers with large leakage inductance. Furthermore, the proposed decoupling-based SPWM and SVM modulation methods for current-source matrix inverters feature mixed high- and low-frequency modulation, enabling safe commutation, effectively reducing the switching frequency of the matrix converter, and providing soft switching conditions for all switches in the matrix converter.

This invention relates to the field of gallium nitride (GaN) technology and discloses a GaN and MOS power module for a robot digital control unit, comprising a substrate, a front GaN structure, and a back GaN structure. The front GaN structure and the back GaN structure are located on opposite sides of the substrate, with an intermediate dielectric deposited between them. The front GaN structure includes a front buffer layer, a front GaN layer, a front aluminum gallium nitride layer, a front source electrode, a front gate electrode, a front P-type GaN layer, and a front drain electrode. This invention achieves normally-off operation through the front enhancement-mode GaN structure to improve system safety, and utilizes the back depletion-mode structure to provide high current drive capability. Simultaneously, the integrated capacitor structure formed by the front electrode, intermediate dielectric, and back electrode effectively absorbs voltage spikes and suppresses electromagnetic interference, thus enabling this power module to combine high-speed switching, low loss, and high reliability in a robot digital control unit.

The present invention discloses an ANPC three-level converter control system and modulation method thereof. By decoding two output signals from a controller, the ANPC three-level drive signal is obtained, eliminating the need for the controller to directly output six control signals. This significantly saves hardware resources and reduces controller costs. The modulation method provided by the present invention implements short commutation path switching during switch state changes, reducing switch turn-off voltage spikes and diode reverse recovery spikes, and preventing overvoltage damage to the switches. It also ensures that the voltage across each switch is effectively clamped in different switch states, preventing overvoltage damage caused by voltage fluctuations, ensuring safe operation of the ANPC three-level converter, and extending the service life of the switches.

The invention relates to the technical field of health management of silicon carbide MOSFET devices, in particular to a silicon carbide MOSFET gate oxide health state real-time monitoring circuit and method. The silicon carbide MOSFET gate-oxide health state real-time monitoring circuit comprises a differentiating circuit, a signal processing unit and a monitoring output unit, and synchronously outputs a first specific monitoring signal when a first voltage spike signal in a silicon carbide MOSFET turn-on stage is continuous; when the second voltage spike signal in the turn-off stage of the silicon carbide MOSFET is continuous, a second specific monitoring signal is synchronously output, and the duration time of the first specific monitoring signal and the duration time of the second specific monitoring signal are used for reflecting the gate-oxide health state of the silicon carbide MOSFET. According to the gate-oxide health state monitoring circuit, the resolution ratio can be effectively improved, only the gate signals are collected, the original working states of devices such as a driving resistor do not need to be changed, real-time online signal collection and low invasion of the monitoring circuit are kept, and the gate-oxide health state monitoring circuit and a driving circuit are easily integrated.

Apparatus and associated methods relate to a gate drive timing controller (GDTC). In an illustrative example, the GDTC may generate a power stage activation signal (PSAS) to control an output current of a MOSFET(s) of the power stage. Three pullup transistors, for example, may be electrically connected to the control output in parallel, configured to generate the PSAS as a function of a switch node voltage (Vsw) and a source inductance voltage (VLS) of the MOSFET. For example, a first pullup transistor may be activated when a PWM signal for the power stage is received, and deactivated based on the VLS. For example, a second pullup transistor may be synchronized with the PWM signal. For example, a third pullup transistor may be activated when the Vsw is detected. Various embodiments may advantageously generate the PSAS adaptively to reduce turn-on loss of the MOSFET while keeping a low transient voltage spike.

The present invention relates to an active buffer absorption circuit for a synchronous rectifier, which includes a driving unit and an active buffer absorption unit; the driving unit is used to control the operation of the active buffer absorption unit, and the active buffer absorption unit is used to absorb the voltage spike caused when the synchronous rectifier is turned off; the active buffer absorption unit includes an active absorption tube and an active absorption capacitor. During the period when the synchronous rectifier is turned off, the active absorption tube conducts for a period of time, so that the active absorption capacitor absorbs the spike voltage generated when the synchronous rectifier is turned off during this period. The active buffer absorption circuit of the present invention uses the driving unit to drive the active absorption capacitor in the active buffer absorption unit to absorb the spike voltage of the synchronous rectifier during the turn-off period of the synchronous rectifier, reduces additional losses, and improves the performance of the switching device.

Provided in the present application is an inverter, which inverter comprises an inverter circuit module and a printed circuit board (PCB). The inverter circuit module forms an inverter circuit by means of traces on the PCB, wherein a first end of the inverter circuit is used for being connected to a direct-current power supply, and a second end of the inverter circuit is used for being connected to an alternating-current power grid and / or a load. The inverter circuit module comprises a plurality of inverter bridge arm modules and a plurality of filter capacitor modules, wherein each inverter bridge arm module comprises at least four switching transistors, and each filter capacitor module comprises at least one capacitor. The plurality of filter capacitor modules are sequentially arranged on the PCB in a first direction, and at least one inverter bridge arm module is arranged between any two filter capacitor modules. The inverter provided in the present application can enhance the suppression effect of voltage spikes in switching transistors in an inverter bridge arm module.

The invention discloses a gate oxide layer protection circuit, a chip and electronic equipment, and belongs to the technical field of electronic circuits. Two trigger signals are sent out in response to the voltage of a power rail through a series RC (Resistance-Capacitance) circuit; the series RC circuit responds to the condition that the voltage of the power rail is larger than a preset value, sends a connection trigger signal from a first node to connect the switching circuit, responds to the condition that the voltage of the power rail is smaller than the preset value and peak voltage appears, and sends a disconnection trigger signal from the first node based on the coupling effect of the first capacitor to cause the switching circuit to be disconnected. The first node is a common contact of the first resistor and the first capacitor; the functional circuit is connected with the first power rail, comprises a field effect transistor and is used for executing corresponding functions; the switching circuit responds to the connection trigger signal to connect the grid electrode of the field effect transistor and the second power rail, and responds to the disconnection trigger signal to disconnect the connection between the grid electrode of the field effect transistor and the second power rail; therefore, the reliability of the chip is improved.