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4results about How to "Reduce withstand voltage" patented technology

An input source multiplexing relay charging parallel type envelope tracking power supply

PendingCN122316063AReduce withstand voltagereduce complexityCapacitanceMultiplexing
This invention discloses a relay-charge parallel envelope tracking power supply with multiplexed input sources, comprising: a stepped wave voltage generation circuit, an AB-class linear amplifier, a feedforward control circuit, and a pulse edge distribution unit. It improves upon conventional parallel envelope tracking power supplies by using a relay-charge switched-capacitor converter to generate a stepped wave voltage based on the modulated wave voltage output from the feedforward control circuit. By integrating a level providing unit and a level gating unit, it simultaneously reduces the switching frequency relative to the reference signal frequency l / k, thereby reducing switching losses. This facilitates further reducing the switching frequency while maintaining tracking bandwidth, simplifying the circuit structure. Multiplexing the input source of the stepped wave voltage generation circuit reduces linear amplifier losses and input power, further improving the overall circuit efficiency.
Owner:NANJING TECH UNIV

A trench-type MPS device and a method of manufacturing the same

ActiveCN115513054Bincrease softnessReduce withstand voltageDopantMaterials science
This application belongs to the field of power device technology and provides a trench-type MPS device and its fabrication method. A trench is formed on the front side of an N-type epitaxial layer. Then, a first P-type dopant ion is implanted at the bottom of the trench, followed by high-temperature annealing to form a first P-type doped region. A second P-type dopant ion is implanted below the sidewall of the trench, and a third P-type dopant ion is implanted above the sidewall of the trench. Then, low-temperature annealing is performed to form a second P-type doped region below the sidewall of the trench and a third P-type doped region above the sidewall of the trench. The doping concentration of the first, second, and third P-type doped regions gradually increases, resulting in weaker electric field shielding of the Schottky device at the bottom of the trench and higher anode implantation efficiency above the sidewall of the trench. This satisfies the conditions of high electric field shielding for the Schottky device and minimal impact on IRM, achieving the characteristics of high breakdown voltage, low VF, high softness, and low IRM for the fast recovery diode device.
Owner:SHENZHEN XINER SEMICON TECH CO LTD

A switched capacitor voltage converter

ActiveCN115833571BReduce withstand voltagereduce areaConvertersVoltage converter
The application discloses a switched capacitor voltage converter, and relates to the technical field of electronic circuits, which comprises a switched capacitor voltage conversion circuit, a monitoring module, a clamping transistor and a clamping circuit. The monitoring module is used for monitoring the electrical parameters of an input terminal VBUS and an output terminal VOUT, and outputting a voltage to the gate terminal of the clamping transistor according to the electrical parameters, so that the voltage value of the output terminal VOUT is stabilized at a target value. The clamping circuit is used for making the voltage difference between the drain terminal and the source terminal of the clamping transistor less than the withstand voltage of the clamping transistor. By introducing a clamping module on the clamping transistor, the voltage difference between the drain terminal and the source terminal of the clamping transistor is made less than the withstand voltage of the clamping transistor, so that the withstand voltage of the clamping transistor is reduced, the area of the transistor is reduced, and the cost is reduced.
Owner:SOUTHCHIP SEMICON TECH SHANGHAI CO LTD

Capacitor high voltage resistance detection response protection circuit and method

The invention discloses a capacitor high voltage resistance detection response protection circuit and method, and relates to the technical field of capacitor detection. The circuit comprises a main control module; the voltage generation module is connected with the main control module; the first current limiting module is connected with the voltage generation module; the input end of the second current-limiting module is connected with the output end of the first current-limiting module, the output end of the second current-limiting module is connected with one end of a to-be-tested capacitor, and the other end of the to-be-tested capacitor is connected with the input end of the voltage generation module; the current limiting threshold module is connected with the main control module; the input end of the driving feedback module is connected with the output end of the current-limiting threshold module, and the output end of the driving feedback module is connected with the controlled end of the second current-limiting module; the input end of the switch module is connected with the main control module, and the output end is connected with the driving feedback module; the constant-voltage power supply module is connected with the first current limiting module; the input end of the short-circuit protection module is connected with the main control module and the driving feedback module, and the output end is connected with the second current limiting module. The circuit can improve the voltage endurance capability and carry out short circuit protection.
Owner:ZHUHAI ZEN LIGHT TECH CO LTD