19results about How to "Reduce withstand voltage" patented technology

The invention relates to a semiconductor device and a preparation method thereof. The semiconductor device comprises a semiconductor material layer; the first groove is located in the semiconductor material layer, the side wall and the bottom wall of the first groove are connected through an arc angle, and the included angle between the plane where the side wall is located and the plane where the bottom wall is located is an obtuse angle; the drain region is located in the semiconductor material layer on the periphery of the first groove, and the depth of the drain region is smaller than that of the first groove; the well region is located in the semiconductor material layer below the bottom wall; the field oxide layer extends on the part, between the well region and the drain region, of the bottom wall and the side wall; the gate dielectric layer is connected with the field oxide layer and covers part of the well region; the field plate is located on the field oxide layer; the grid electrode is located on the grid electrode dielectric layer; the source region is positioned on the surface layer of the well region; a current conduction path of the semiconductor device comprises a first current conduction path which is located in the semiconductor material layer and extends close to the bottom wall and a second current conduction path which extends close to the side wall. Therefore, the on-resistance of the device is reduced, and the voltage-resistant performance of the device is ensured at the same time.

The invention, which belongs to the technical field of high-voltage direct-current power transmission, discloses an all-condition equivalent test device for a capacitor for direct-current power transmission, comprising an alternating-current voltage test module and a direct-current voltage test module. After the alternating-current voltage test module and the direct-current voltage test module are connected in parallel, one end is connected with a capacitor to be tested, and the other end is grounded; the alternating-current voltage test module is used for outputting alternating-current voltage with adjustable amplitude and frequency; the direct-current voltage test module is used for outputting direct-current voltage with adjustable amplitude and boost rate; the alternating-current voltage test module is used for outputting alternating-current voltage with adjustable amplitude and frequency; the DC voltage test module is used for outputting a DC voltage with an adjustable amplitude and an adjustable boost rate. According to the invention, the problem that the test performance of the DC support capacitor does not accord with the practical application of engineering because the existing test device can only output single DC voltage or AC voltage is solved, and effective assessment of the full-working-condition stress of the capacitor is realized by inputting different working-condition voltage stress waveforms.

The invention belongs to the technical field of electrode materials, and particularly relates to an electrode foil, a preparation method thereof and an aluminum electrolytic capacitor, and the preparation method of the electrode foil comprises the steps: carrying out the formation of a corrosion foil, and forming an aluminum oxide film on the surface of the corrosion foil; forming a nano-porous silicon dioxide film on the surface of the aluminum oxide film to obtain an electrode foil with an aluminum oxide-silicon dioxide double-layer composite oxide film; and sequentially carrying out phosphating treatment and annealing treatment on the electrode foil. According to the preparation method, after the corrosion foil is subjected to formation treatment to form the Al2O3 film, the nano-porous SiO2 film is formed on the surface of the Al2O3 film, the SiO2 film is subjected to phosphating treatment to contain phosphorus elements, the phosphorus elements are uniformly diffused into the SiO2 film, a double-layer composite oxidation film with the Al2O3 inner layer and the SiO2 outer layer is obtained, and the specific volume, the hydration resistance and the corrosion resistance of the low-voltage electrode foil are improved.

The present invention discloses a junction terminal of a power transistor, comprising a dielectric layer, a plurality of field limiting ring groups, and a plurality of field plates corresponding to the field limiting ring groups; the projected area of ​​the field plates on the dielectric layer is larger than the projected area of ​​the field limiting ring groups on the dielectric layer; wherein the field limiting ring groups comprise a main field limiting ring and a plurality of auxiliary field limiting rings; the main field limiting ring is connected to the corresponding field plate through a contact hole of the dielectric layer, and the auxiliary field limiting ring is isolated from the corresponding field plate through the dielectric layer. In this way, a field plate, a main field limiting ring, and a plurality of auxiliary field limiting rings form a composite structure, and under the constraint of the same blocking voltage, the number of field plates is smaller, the number of gaps between the field plates is also smaller, and the terminal exposure area is reduced accordingly. In the subsequent chip process, packaging process, and external environment, the charge entering the dielectric layer through these gaps is reduced as much as possible, so as to avoid the destruction of the electric field distribution of the junction terminal due to excessive accumulation of charge, and prevent the voltage resistance of the power transistor from being reduced.

The present invention discloses a parallel structure high-efficiency envelope tracking power supply and a control method thereof, comprising a parallel switching converter and a linear amplifier, wherein the switching converter and the linear amplifier respectively work in a current source form and a voltage source form; the output current of the switching converter fits the load current in a triangular wave form, and the linear amplifier is used to compensate for the difference current between the load current and the output current of the switching converter. The present invention can reduce the voltage borne by the power tube during operation, reduce the switching frequency of the CSC, greatly reduce the loss of the VLA, and significantly improve the efficiency of the parallel structure envelope tracking power supply.

The present invention discloses a flexible circuit board containing a transparent cover film and a preparation method thereof, comprising a transparent composite PI substrate and a transparent cover film formed on at least one side of the transparent composite PI substrate; the transparent composite PI substrate comprises a first copper foil layer, a first UV-resistant transparent polyimide layer, a first UV-resistant transparent adhesive layer and a second copper foil layer from top to bottom; the transparent cover film comprises a second UV-resistant transparent adhesive layer and a second UV-resistant transparent polyimide layer; the glass transition temperature of the first UV-resistant transparent polyimide layer and the glass transition temperature of the second UV-resistant transparent polyimide layer are both greater than 320°C. The circuit board of the present invention has extremely high transmittance, extremely low haze, resistance to QUV irradiation, high Tg, high deflection, low rebound force, voltage resistance and low CTE.

The invention discloses a control method and device of a space power station energy management system, terminal equipment and a storage medium. The method comprises the steps of obtaining an input voltage of the space power station energy management system; the space power station energy management system comprises a plurality of photovoltaic arrays, a DC bus, a plurality of IPOS boost modules, a plurality of ISOP voltage reduction modules and a plurality of microwave emission arrays. Performing boost control on each IPOS boost module based on the input voltage and a preset three-loop control strategy to obtain boost output; transmitting each step-up output to a corresponding ISOP step-down module through a DC bus for step-down control to obtain a step-down output; and controlling the power supply of the corresponding microwave emission array based on the step-down output. According to the invention, the bearing voltage or current of an electronic device can be reduced, the loss can be reduced during high-voltage transmission, and the output power of a space power station can be improved.

The invention belongs to the technical field of electronic equipment, and discloses a diode driving circuit and a control method thereof, and the diode driving circuit comprises an inductor, a switching tube S1, a switching tube S2, a laser diode assembly, an input capacitor, a voltage stabilizing capacitor, a diode D1, a diode D2, a control module 1 and a control module 2. One end of the input capacitor is connected with one end of the inductor and connected with the anode of the diode D1, the other end of the input capacitor is connected to GND, the other end of the inductor is connected with the drain electrode of the switching tube S1 and the anode of the diode D2, and the cathode of the diode D1 is connected with the anode of the laser diode assembly and the cathode of the diode D2. The cathode of the laser diode assembly is connected with the drain electrode of the switch tube S2, one end of the voltage stabilizing capacitor is connected with the anode of the diode D1, and the other end of the voltage stabilizing capacitor is connected with the cathode of the diode D1. According to the invention, the voltage withstanding value of the voltage stabilizing capacitor is effectively reduced while the high frequency, quick response and large current change rate performance of the pulse laser driver are met.

This invention discloses a relay-charge parallel envelope tracking power supply with multiplexed input sources, comprising: a stepped wave voltage generation circuit, an AB-class linear amplifier, a feedforward control circuit, and a pulse edge distribution unit. It improves upon conventional parallel envelope tracking power supplies by using a relay-charge switched-capacitor converter to generate a stepped wave voltage based on the modulated wave voltage output from the feedforward control circuit. By integrating a level providing unit and a level gating unit, it simultaneously reduces the switching frequency relative to the reference signal frequency l / k, thereby reducing switching losses. This facilitates further reducing the switching frequency while maintaining tracking bandwidth, simplifying the circuit structure. Multiplexing the input source of the stepped wave voltage generation circuit reduces linear amplifier losses and input power, further improving the overall circuit efficiency.

Boost three-bridge-arm inverter and boost regulation method. Usually, in a 380V system, the withstand voltage of the power tube is generally above 800V, the lower tube of the full-bridge inverter circuit often generates serious heat, and the harmonic content in the power grid is also very high. The present invention comprises a power supply device module (101), the power supply device module is connected to a push-pull boost module (102), the push-pull boost module is connected to a rectifier filter module (103), the rectifier filter module is connected to a three-bridge-arm inverter bridge module (104), and the three-bridge-arm inverter bridge module is connected to an LCL filter module (105); the power supply device module, the push-pull boost module, and the LCL filter module respectively output signals to the A / D conversion end of the DSP main controller (108), and the PWM output port of the DSP main controller is respectively connected to an isolation drive module A (107) and an isolation drive module B (111). The present invention is applied to a boost three-bridge-arm inverter.

The invention provides a high-voltage voltage-multiplying circuit for a DC-DC conversion circuit. The high-voltage voltage-multiplying circuit comprises a basic voltage-multiplying module and an expansion voltage-multiplying module, wherein the basic voltage-multiplying module consists of four rectification branches; the expansion voltage-multiplying module consists of two expansion rectification branches; each of the rectification branch and the expansion rectification branch is formed by connecting a unilateral diode and a capacitor in series; the four rectification branches in the basic voltage-multiplying module are connected in parallel, and the voltage-multiplying capability of four times of voltage is provided. In the expansion voltage-multiplying module, the unilateral diodes of the second expansion rectification branch and the first expansion rectification branch are reversely connected in parallel; m expansion voltage-multiplying modules are selected to be cascaded according to the required voltage-multiplying multiple; and the capacitor in the fourth rectification branch and the capacitor in the second expansion rectification branch in each expansion voltage-multiplying module are jointly connected in series to supply power to the load and provide 4 + 2m double voltage. According to the invention, the voltage-multiplying multiple of the output voltage can be changed by increasing or reducing the rectification branches, the voltage-multiplying capability is high, and the cost is saved.

The utility model provides a converter based on a SiC / Si hybrid ANPC circuit. The converter comprises two same traction converter circuits; the traction converter circuit comprises a rectifier module, an inverter module and two support capacitor branches; both the rectifier module and the inverter module adopt an ANPC three-level circuit structure formed by mixing a SiC device and a Si IGBT device; the M nodes of the two traction converter circuits are communicated, and the N nodes of the two traction converter circuits are also communicated. According to the utility model, the three-level circuit is adopted, so that the withstand voltage values of semiconductor switch tubes such as Si IGBT devices and SiC devices can be reduced by half, and therefore, the voltage level of the converter can be further improved to output higher power, and higher power density can be obtained under the condition that the size of the converter is not changed.

This application belongs to the field of power device technology and provides a trench-type MPS device and its fabrication method. A trench is formed on the front side of an N-type epitaxial layer. Then, a first P-type dopant ion is implanted at the bottom of the trench, followed by high-temperature annealing to form a first P-type doped region. A second P-type dopant ion is implanted below the sidewall of the trench, and a third P-type dopant ion is implanted above the sidewall of the trench. Then, low-temperature annealing is performed to form a second P-type doped region below the sidewall of the trench and a third P-type doped region above the sidewall of the trench. The doping concentration of the first, second, and third P-type doped regions gradually increases, resulting in weaker electric field shielding of the Schottky device at the bottom of the trench and higher anode implantation efficiency above the sidewall of the trench. This satisfies the conditions of high electric field shielding for the Schottky device and minimal impact on IRM, achieving the characteristics of high breakdown voltage, low VF, high softness, and low IRM for the fast recovery diode device.

The invention discloses a level conversion circuit, a memory and electronic equipment, the level conversion circuit comprises a pull-down module, an output module and a clamping module connected between the pull-down module and the output module, and the clamping module is connected between the pull-down module and the output module. According to the technical scheme, the clamping module can reduce the withstand voltage value of the pull-down module according to the bias voltage, so that the withstand voltage value required by the pull-down module is reduced, the pull-down module is facilitated to adopt a low-voltage device with a lower withstand voltage value, and compared with the pull-down module adopting a high-voltage device with a higher withstand voltage value, the occupied area of the pull-down module is reduced.

The application discloses a switched capacitor voltage converter, and relates to the technical field of electronic circuits, which comprises a switched capacitor voltage conversion circuit, a monitoring module, a clamping transistor and a clamping circuit. The monitoring module is used for monitoring the electrical parameters of an input terminal VBUS and an output terminal VOUT, and outputting a voltage to the gate terminal of the clamping transistor according to the electrical parameters, so that the voltage value of the output terminal VOUT is stabilized at a target value. The clamping circuit is used for making the voltage difference between the drain terminal and the source terminal of the clamping transistor less than the withstand voltage of the clamping transistor. By introducing a clamping module on the clamping transistor, the voltage difference between the drain terminal and the source terminal of the clamping transistor is made less than the withstand voltage of the clamping transistor, so that the withstand voltage of the clamping transistor is reduced, the area of the transistor is reduced, and the cost is reduced.

The present invention discloses a three-level DC-AC inverter suitable for photovoltaic grid-connected hydrogen production, including: a first transformer and a second transformer, used to convert the direct current outputted by a photovoltaic direct current power supply into alternating current; a clamping circuit, connected to the primary coils of the first transformer and the second transformer, used to clamp the voltage of the primary coils of the first transformer and the second transformer, wherein the primary coils of the first transformer and the second transformer are connected in parallel and respectively connected to the photovoltaic direct current power supply; a three-level conversion circuit, connected to the secondary coils of the first transformer and the second transformer, used to boost and convert the alternating current outputted by the secondary coils of the first transformer and the second transformer into three-level alternating current, wherein the secondary coils of the first transformer and the second transformer are connected in series; and a grid-connected control circuit, used to connect the three-level alternating current outputted by the three-level conversion circuit to the hydrogen production grid. The present invention has high gain and can suppress the generation of leakage current.

The invention discloses a capacitor high voltage resistance detection response protection circuit and method, and relates to the technical field of capacitor detection. The circuit comprises a main control module; the voltage generation module is connected with the main control module; the first current limiting module is connected with the voltage generation module; the input end of the second current-limiting module is connected with the output end of the first current-limiting module, the output end of the second current-limiting module is connected with one end of a to-be-tested capacitor, and the other end of the to-be-tested capacitor is connected with the input end of the voltage generation module; the current limiting threshold module is connected with the main control module; the input end of the driving feedback module is connected with the output end of the current-limiting threshold module, and the output end of the driving feedback module is connected with the controlled end of the second current-limiting module; the input end of the switch module is connected with the main control module, and the output end is connected with the driving feedback module; the constant-voltage power supply module is connected with the first current limiting module; the input end of the short-circuit protection module is connected with the main control module and the driving feedback module, and the output end is connected with the second current limiting module. The circuit can improve the voltage endurance capability and carry out short circuit protection.

The utility model discloses a simulated sine wave inverter circuit, which comprises a direct current booster circuit, a rectifying circuit, an inverter output circuit and an SPWM (sinusoidal pulse width modulation) driving circuit, and is characterized in that the direct current booster circuit is used for boosting input direct current and outputting the boosted direct current; the rectifying circuit is used for rectifying the output of the direct current booster circuit into stable secondary direct current; the inverter output circuit comprises a full-bridge inverter circuit and a sine wave filter circuit, and the SPWM drive circuit is used for outputting a sine pulse width modulation signal SPWM so as to invert the secondary direct current into alternating current through the full-bridge inverter circuit. And the sine wave filter circuit filters the square wave alternating current output by the full-bridge inverter circuit into simulated sine wave alternating current. Therefore, the original square wave inversion is improved to output the simulated sine wave alternating current of which the top and the bottom are leveled in amplitude, and a component with a relatively low withstand voltage value can be selected for rectification filtering and inversion output, so that the cost is reduced. And meanwhile, a load containing a PFC circuit and an adapter can be better compatible.

The invention discloses a novel high-voltage large-current capacitor energy storage type pulse power supply which comprises a first capacitor C1, a second capacitor C2, a first diode structure D1, a second diode structure D2, a follow current resistor R1, a discharge control switch Q1 and an inductance coil L1. A series branch formed by the freewheeling resistor R1, the first diode structure D1 and the second diode structure D2 is connected in parallel with the first capacitor C1, and a series branch formed by the freewheeling resistor R1 and the first diode structure D1 is connected in parallel with the second capacitor C2; the positive electrode of the C1 is connected with the first end of the L1 through the Q1, the positive electrode of the C2 is connected with the common end of the D1 and the D2, and the D2 is connected with the Q1; the negative electrode of the C1 and the negative electrode of the C2 are both connected with the second end of the L1. The withstand voltage of the diode is reduced by optimizing the circuit structure, and the cost is reduced; the back voltage of the capacitor is naturally reduced, and an extra control discharge loop is not needed.