18004results about How to "Raise the ratio" patented technology

An acid fracturing method is provided in which the acid is generated in the fracture by hydrolysis of a solid acid-precursor selected from one or more than one of lactide, glycolide, polylactic acid, polyglycolic acid, a copolymer of polylactic acid and polyglycolic acid, a copolymer of glycolic acid with other hydroxy-, carboxylic acid-, or hydroxycarboxylic acid-containing moieties, and a copolymer of lactic acid with other hydroxy-, carboxylic acid or hydroxycarboxylic acid-containing moieties. The solid acid-precursor may be mixed with a solid acid-reactive material to accelerate the hydrolysis and / or coated to slow the hydrolysis. Water-soluble liquid compounds are also given that accelerate the hydrolysis. The method ensures that the acid contacts fracture faces far from the wellbore.

This invention relates to an electrophoretic display with improved contrast ratio, switching performance, reflectivity at the Dmin state and structural integrity, and methods for its manufacture.

A photomask for eliminating antenna effects in an integrated circuit and integrated circuit manufactured with the photomask are disclosed. The photomask includes a substrate and a patterned layer formed on at least a portion of the substrate. The patterned layer may be formed using a mask pattern file created by analyzing a pattern in a mask layout file to identify a region including an antenna ratio less than a first design rule. A feature located in the identified region is moved based on a second design rule from a first position to a second position in the mask layout file to create a space in the identified region. A grounding feature is placed in the space and automatically connected to a gate feature in the mask layout file such that the antenna ratio is increased to greater than or approximately equal to the first design rule.

The invention relates to sample supports and methods for cryoconservation, especially the cryoconservation of biological materials, comprising at least one sample reservoir used to receive a biological sample. A support body is disposed in the sample reservoir, made of a material having a volume structure, consisting of a plurality of open, inner cavities which can be filled with the sample. The invention also relates to the use of motor vehicle catalyst-structure or biomorphic ceramics for producing support bodies used to receive samples for cryoconservation.

Provided are a method of manufacturing a ZnO semiconductor layer for an electronic device, which can control the size of crystals of the ZnO semiconductor layer and the number of carriers using a surface chemical reaction between precursors, and a thin film transistor (TFT) including the ZnO semiconductor layer. The method includes: (a) loading a substrate into a chamber; (b) injecting a Zn precursor into the chamber to adsorb the Zn precursor on the substrate; (c) injecting an inert gas or N2 gas into the chamber to remove the remaining Zn precursor; (d) injecting an oxygen precursor into the chamber to cause a reaction between the oxygen precursor and the Zn precursor adsorbed on the substrate to form the ZnO semiconductor layer; (e) injecting the N2 gas or inert gas into the chamber to remove the remaining oxygen precursor; (f) repeating steps (a) through (e); (g) repeatedly processing the surface treatment of the ZnO semiconductor layer using O2 plasma or O3; (h) injecting the N2 gas or inert gas into the chamber to remove the remaining oxygen and Zn precursors; and (i) repeating steps (a) through (h) to control the thickness of the ZnO semiconductor layer. In this method, a transparent TFT is formed using a transparent substrate to enable manufacture of a transparent display device, and a flexible display device can be manufactured using a flexible substrate. Also, the crystallinity of the ZnO semiconductor layer can be increased to improve the mobility of a TFT, and the number of carriers can be controlled to reduce a leakage current. Therefore, a ZnO semiconductor having excellent characteristics can be manufactured.

The present invention relates to a data storage method, device and system and a management server. The data storage method includes: constituting a data pool from all of n data storage devices; when there is data for storage, polling all the devices in the data pool to select a group of m devices, and storing the data onto each of the selected group of m devices, where m is larger than one and smaller than n. The embodiments of the invention can address the problems of an existing data storage approach that a failing node causes an increased load on and instability of another node and that each node in the existing data storage approach has a low utilization ratio and poor predictability, so as to achieve uniform loads on the devices and high reliability of the nodes despite any failing node and improve the resource utilization ratio and predictability of the nodes.

A method of forming a dielectric film, includes: introducing a siloxane gas essentially constituted by Si, O, C, and H and a silazane gas essentially constituted by Si, N, H, and optionally C into a reaction chamber where a substrate is placed; depositing a siloxane-based film including Si—N bonds on the substrate by plasma reaction; and annealing the siloxane-based film on the substrate in an annealing chamber to remove Si—N bonds from the film.