Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Hiro

18027results about How to "Raise the ratio" patented technology

Fabric or garment with integrated flexible information infrastructure

A fabric, in the form of a woven or knitted fabric or garment, including a flexible information infrastructure integrated within the fabric for collecting, processing, transmitting and receiving information concerning-but not limited to-a wearer of the fabric. The fabric allows a new way to customize information processing devices to "fit" the wearer by selecting and plugging in (or removing) chips / sensors from the fabric thus creating a wearable, mobile information infrastructure that can operate in a stand-alone or networked mode. The fabric can be provided with sensors for monitoring physical aspects of the wearer, for example body vital signs, such as heart rate, EKG, pulse, respiration rate, temperature, voice, and allergic reaction, as well as penetration of the fabric. The fabric consists of a base fabric ("comfort component"), and an information infrastructure component which can consist of a penetration detection component, or an electrical conductive component, or both. The preferred penetration detection component is a sheathed optical fiber. The information infrastructure component can include, in addition to an electrically conductive textile yarn, a sensor or a connector for a sensor. A process is provided for making an electrical interconnection between intersecting electrically conductive yarns. Furthermore, a process is established for sheathing the plastic optical fiber and protecting it.
Owner:GEORGIA TECH RES CORP

Low leakage heterojunction vertical transistors and high performance devices thereof

InactiveUS6943407B2Superb performanceSuperb scalabilityTransistorSolid-state devicesReverse short-channel effectHeterojunction
A method for forming and the structure of a vertical channel of a field effect transistor, a field effect transistor and CMOS circuitry are described incorporating a drain, body and source region on a sidewall of a vertical single crystal semiconductor structure wherein a hetero-junction is formed between the source and body of the transistor, wherein the source region and channel are independently lattice strained with respect the body region and wherein the drain region contains a carbon doped region to prevent the diffusion of dopants (i.e., B and P) into the body. The invention reduces the problem of short channel effects such as drain induced barrier lowering and the leakage current from the source to drain regions via the hetero-junction and while independently permitting lattice strain in the channel region for increased mobility via choice of the semiconductor materials. The problem of scalability of the gate length below 100 nm is overcome by the heterojunction between the source and body regions.
Owner:GLOBALFOUNDRIES INC

Electrosurgical system

InactiveUS20080287948A1Enhanced signalMaximise patient safetySurgical instrument detailsEngineeringRadio frequency
An electrosurgical system includes a generator for generating radio frequency power, an electrosurgical instrument including at least first and second bipolar electrodes carried on the instrument, and a monopolar patient return electrode separate from the instrument. The generator comprises a source of radio frequency (RF) power, and has a first supply state in which the RF waveform is supplied between the first and second bipolar electrodes of the electrosurgical instrument, and a second supply state in which the RF waveform is supplied between at least one of the first and second bipolar electrodes and the monopolar patient return electrode. A controller is operable to control the generator such that, in at least one mode of the generator, a feeding means is adapted to alternate between the first and second supply states to supply an alternating signal.
Owner:GYRUS MEDICAL LTD

Semiconductor device and method for manufacturing the same

The present invention discloses a semiconductor device, comprising: a substrate, a gate stack structure on the substrate, source and drain regions in the substrate on both sides of the gate stack structure, and a channel region between the source and drain regions in the substrate, characterized in that the source region in the source and drain regions comprises GeSn alloy, and a tunnel dielectric layer is optionally comprised between the GeSn alloy of the source region and the channel region. In accordance with the semiconductor device and method for manufacturing the same of the present invention, GeSn alloy having a narrow band gap is formed by implanting precursors and performing a laser rapid annealing, the on-state current of TFET is effectively enhanced, accordingly it has an important application prospect in a high performance low power consumption application.
Owner:INST OF MICROELECTRONICS CHINESE ACAD OF SCI

Cartilage repair plug

A cartilage plug, which is made from a biocompatible, artificial material, that is used to fill a void in natural cartilage that has been resected due to traumatic injury or chronic disease. Alternatively, the plug may be relied upon to anchor a flowable polymer to subchondral bone. The plug is prefabricatable in any size, shape, and contour and may be utilized either singly or in a plurality to fill any size void for any application. The plug may be formed of a laminated structure to match the physiological requirements of the repair site. A plurality of anchoring elements may share a single upper layer.
Owner:ABS

Semiconductor device and method for producing the same

First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r1′ of the upper corner of the first fin-shaped semiconductor region located outside the first gate insulating film is greater than the radius of curvature r1 of the upper corner of the first fin-shaped semiconductor region located under the first gate insulating film and is less than or equal to 2×r1. The radius of curvature r2′ of the upper corner of the second fin-shaped semiconductor region located outside the second gate insulating film is greater than the radius of curvature r2 of the upper corner of the second fin-shaped semiconductor region located under the second gate insulating film and is less than or equal to 2×r2.
Owner:GK BRIDGE 1

Methods for increasing the production of ethanol from microbial fermentation

InactiveUS7285402B2Good culture stabilityPermit growthBioreactor/fermenter combinationsSolid waste disposalBioreactorNutrient
A stable continuous method for producing ethanol from the anaerobic bacterial fermentation of a gaseous substrate containing at least one reducing gas involves culturing a fermentation bioreactor anaerobic, acetogenic bacteria in a liquid nutrient medium; supplying the gaseous substrate to the bioreactor; and manipulating the bacteria in the bioreactor by reducing the redox potential, or increasing the NAD(P)H TO NAD(P) ratio, in the fermentation broth after the bacteria achieves a steady state and stable cell concentration in the bioreactor. The free acetic acid concentration in the bioreactor is maintained at less than 5 g / L free acid. This method allows ethanol to be produced in the fermentation broth in the bioreactor at a productivity greater than 10 g / L per day. Both ethanol and acetate are produced in a ratio of ethanol to acetate ranging from 1:1 to 20:1.
Owner:JUPENG BIO HK LTD

Head end receiver for digital data delivery systems using mixed mode SCDMA and TDMA multiplexing

A pipelined digital data receiver for a cable TV headend which is capable of receiving DOCSIS 1.0 or 1.1 or advanced PHY TDMA or SCDMA bursts having programmable symbol rates and programmable modulation types as well as a host of other burst parameters such at Trellis code modulation on or off, scrambling on or off, various values for Reed-Solomon T number and codeword length. The receiver has an RF section to filter and digitize incoming RF signals. It also has an input section to detect impulse noise and do match filtering and despread SCDMA bursts. A timing recovery section recovers the symbol clock and detects the start of bursts and collisions. A rotational amplifier and equalizer calculate and track gain, phase and frequency offsets and correct symbols and calculates equalization coefficients. A decoder section decodes TCM and non TCM bursts, and a Reed-Solomon decoder section reconstructs RS codewords and uses them to error correct the payload data.
Owner:GOOGLE TECH HLDG LLC

Generating Acid Downhole in Acid Fracturing

An acid fracturing method is provided in which the acid is generated in the fracture by hydrolysis of a solid acid-precursor selected from one or more than one of lactide, glycolide, polylactic acid, polyglycolic acid, a copolymer of polylactic acid and polyglycolic acid, a copolymer of glycolic acid with other hydroxy-, carboxylic acid-, or hydroxycarboxylic acid-containing moieties, and a copolymer of lactic acid with other hydroxy-, carboxylic acid or hydroxycarboxylic acid-containing moieties. The solid acid-precursor may be mixed with a solid acid-reactive material to accelerate the hydrolysis and / or coated to slow the hydrolysis. Water-soluble liquid compounds are also given that accelerate the hydrolysis. The method ensures that the acid contacts fracture faces far from the wellbore.
Owner:SCHLUMBERGER TECH CORP

Methods and apparatuses for bone restoration

Methods and apparatuses for restoration of human or animal bone anatomy, which may include introduction, into a bone of an expansible implant capable of expansion in a single determined plane, positioning the expansible implant in the bone in order to correspond the single determined plane with a bone restoration plane and opening out the expansible implant in the bone restoration plane. A first support surface and a second support surface spread tissues within bone. The embodiments of the invention may also include injecting a filling material around the implant.
Owner:STRYKER EUROPEAN OPERATIONS LIMITED

Structural and other composite materials and methods for making same

In accordance with the present invention, structural and other composite materials have been developed which have superior performance properties, including high compressive strength, high tensile strength, high shear strength, and high strength-to-weight ratio, and methods for preparing same. Invention materials have the added benefits of ease of manufacture, and are inexpensive to manufacture. The superior performance properties of invention materials render such materials suitable for a wide variety of end uses. For example, a variety of substances can be applied to invention materials without melting, dissolving or degrading the basic structure thereof. This facilitates bonding invention materials to virtually any surface or substrate. Moreover, the bond between invention materials and a variety of substrates is exceptionally strong, rendering the resulting bonded article suitable for use in a variety of demanding applications. Invention materials can be manufactured in a wide variety of sizes, shapes, densities, in multiple layers, and the like; and the performance properties thereof can be evaluated in a variety of ways.
Owner:PETRITECH

Photomask for eliminating antenna effects in an integrated circuit and integrated circuit manufacture with same

A photomask for eliminating antenna effects in an integrated circuit and integrated circuit manufactured with the photomask are disclosed. The photomask includes a substrate and a patterned layer formed on at least a portion of the substrate. The patterned layer may be formed using a mask pattern file created by analyzing a pattern in a mask layout file to identify a region including an antenna ratio less than a first design rule. A feature located in the identified region is moved based on a second design rule from a first position to a second position in the mask layout file to create a space in the identified region. A grounding feature is placed in the space and automatically connected to a gate feature in the mask layout file such that the antenna ratio is increased to greater than or approximately equal to the first design rule.
Owner:CELERICS TECH

Fourier domain optical coherence tomography employing a swept multi-wavelength laser and a multi-channel receiver

The present invention is an alternative Fourier domain optical coherence system (FD-OCT) and its associated method. The system comprises a swept multi-wavelength laser, an optical interferometer and a multi-channel receiver. By employing a multi-wavelength laser, the sweeping range for each lasing wavelength is substantially reduced as compared to a pure swept single wavelength laser that needs to cover the same overall spectral range. The overall spectral interferogram is divided over the individual channels of the multi-channel receiver and can be re-constructed through processing of the data from each channel detector. In addition to a substantial increase in the speed of each axial scan, the cost of invented FD-OCT system can also be substantially less than that of a pure swept source OCT or a pure spectral domain OCT system.
Owner:CARL ZEISS MEDITEC INC

Fabric creped absorbent sheet with variable local basis weight

An absorbent cellulosic sheet having variable local basis weight includes a papermaking-fiber reticulum provided with (i) a plurality of cross-machine direction (CD) extending, fiber-enriched pileated regions of relatively high local basis weight interconnected by (ii) a plurality of elongated densified regions of compressed papermaking fibers. The elongated densified regions have relatively low local basis weight and are generally oriented along the machine direction (MD) of the sheet and have an MD / CD aspect ratio of at least 1.5. The products are most preferably prepared by way of a compactive dewatering / wet crepe process.
Owner:GPCP IP HLDG LLC

Sample carrier for cryoconservation of biological samples

The invention relates to sample supports and methods for cryoconservation, especially the cryoconservation of biological materials, comprising at least one sample reservoir used to receive a biological sample. A support body is disposed in the sample reservoir, made of a material having a volume structure, consisting of a plurality of open, inner cavities which can be filled with the sample. The invention also relates to the use of motor vehicle catalyst-structure or biomorphic ceramics for producing support bodies used to receive samples for cryoconservation.
Owner:FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV

Measurement and analysis of trends in physiological and/or health data

System comprised of a portable medical device and method for registering at least one of electrocardiographic (ECG), magnetocardiographic (MCG), physical activity, body position, respiration, temperature, blood pressure, vasomotor activity, blood flow, neural activity, and other physiological, and health data, extracting and representing the most significant parameters from time series (trends) of said data. The system achieves the necessary sensitivity (signal-to-noise ratio) in order to miniaturize the device by collecting data of at least one fiducial point in a cardiac complex over a period of at least one, and preferably, several seconds, and extracting the underlying typical patterns from these data. Due to the miniaturization (pocket-size), the system can be implemented in a shape of a pen (or another miniature shape) that can be worn in a pocket.
Owner:SHUSTERMAN VLADIMIR

Semiconductor device and manufacturing method thereof

To provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability and a manufacturing method of the semiconductor device with high mass productivity. The summary is that an inverted-staggered (bottom-gate) thin film transistor is included in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, a channel protective layer is provided in a region that overlaps a channel formation region of the semiconductor layer, and a buffer layer is provided between the semiconductor layer and source and drain electrodes. An ohmic contact is formed by intentionally providing the buffer layer having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrodes.
Owner:SEMICON ENERGY LAB CO LTD

Transmissive or reflective liquid crystal display and novel process for its manufacture

This invention relates to liquid crystal (LC) displays comprising cells of well-defined shape, size and aspect ratio which cells are filled with a liquid crystal composition preferably containing dichroic dye(s), and novel processes for their manufacture.
Owner:E INK CALIFORNIA

Process for the preparation of polyalkenyl succinic anhydrides

A polyalkenyl succinic anhydride is prepared with low amounts of resinous or chlorinated byproducts in a two-step process whereby a polyalkene is first reacted with an unsaturated organic acid in a thermal ene reaction, followed with exposure to a gaseous halogen in presence of an additional amount of the unsaturated organic acidic reagent. The foregoing process produces a polyisobutenyl succinic anhydride having a high ratio of succinic anhydride functional groups to polyisobutenyl backbone groups. Such a polyisobutenyl succinic anhydride is particular suitable for the production of oil-soluble hydrocarbyl succinimides that have good dispersant properties when added to lubricating oil compositions.
Owner:AFTON CHEMICAL

Semiconductor device

A display device includes a pixel portion in which a pixel is arranged in a matrix, the pixel including an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen and having a channel protective layer over a semiconductor layer to be a channel formation region overlapping a gate electrode layer and a pixel electrode layer electrically connected to the inverted staggered thin film transistor. In the periphery of the pixel portion in this display device, a pad portion including a conductive layer made of the same material as the pixel electrode layer is provided. In addition, the conductive layer is electrically connected to a common electrode layer formed on a counter substrate.
Owner:SEMICON ENERGY LAB CO LTD

METHOD OF MANUFACTURING ZnO SEMICONDUCTOR LAYER FOR ELECTRONIC DEVICE AND THIN FILM TRANSISTOR INCLUDING THE ZnO SEMICONDUCTOR LAYER

Provided are a method of manufacturing a ZnO semiconductor layer for an electronic device, which can control the size of crystals of the ZnO semiconductor layer and the number of carriers using a surface chemical reaction between precursors, and a thin film transistor (TFT) including the ZnO semiconductor layer. The method includes: (a) loading a substrate into a chamber; (b) injecting a Zn precursor into the chamber to adsorb the Zn precursor on the substrate; (c) injecting an inert gas or N2 gas into the chamber to remove the remaining Zn precursor; (d) injecting an oxygen precursor into the chamber to cause a reaction between the oxygen precursor and the Zn precursor adsorbed on the substrate to form the ZnO semiconductor layer; (e) injecting the N2 gas or inert gas into the chamber to remove the remaining oxygen precursor; (f) repeating steps (a) through (e); (g) repeatedly processing the surface treatment of the ZnO semiconductor layer using O2 plasma or O3; (h) injecting the N2 gas or inert gas into the chamber to remove the remaining oxygen and Zn precursors; and (i) repeating steps (a) through (h) to control the thickness of the ZnO semiconductor layer. In this method, a transparent TFT is formed using a transparent substrate to enable manufacture of a transparent display device, and a flexible display device can be manufactured using a flexible substrate. Also, the crystallinity of the ZnO semiconductor layer can be increased to improve the mobility of a TFT, and the number of carriers can be controlled to reduce a leakage current. Therefore, a ZnO semiconductor having excellent characteristics can be manufactured.
Owner:ELECTRONICS & TELECOMM RES INST

Data storage method, device and system and management server

InactiveUS20100268908A1Increase load on and instabilityLow utilization ratioError detection/correctionMemory adressing/allocation/relocationInstabilityResource utilization
The present invention relates to a data storage method, device and system and a management server. The data storage method includes: constituting a data pool from all of n data storage devices; when there is data for storage, polling all the devices in the data pool to select a group of m devices, and storing the data onto each of the selected group of m devices, where m is larger than one and smaller than n. The embodiments of the invention can address the problems of an existing data storage approach that a failing node causes an increased load on and instability of another node and that each node in the existing data storage approach has a low utilization ratio and poor predictability, so as to achieve uniform loads on the devices and high reliability of the nodes despite any failing node and improve the resource utilization ratio and predictability of the nodes.
Owner:CHINA MOBILE COMM GRP CO LTD

Carrier interferometry networks

Applications of CI processing to ad-hoc and peer-to-peer networking significantly improve throughput, network capacity, range, power efficiency, and spectral efficiency. CI-based subscriber units perform network-control functions to optimize network performance relative to channel conditions, network loads, and subscriber services. CI codes are used to identify and address network transmissions. Channel characteristics of communication links are employed to encode, address, and authenticate network transmissions. CI transceivers used as relays and routers employ unique characteristics of transmission paths to code and decode network transmissions. A central processor is adapted to perform array processing with signals received from, and transmitted by, a plurality of subscriber units in a wireless network.
Owner:GENGHISCOMM HLDG

Method for forming dielectric film using siloxane-silazane mixture

A method of forming a dielectric film, includes: introducing a siloxane gas essentially constituted by Si, O, C, and H and a silazane gas essentially constituted by Si, N, H, and optionally C into a reaction chamber where a substrate is placed; depositing a siloxane-based film including Si—N bonds on the substrate by plasma reaction; and annealing the siloxane-based film on the substrate in an annealing chamber to remove Si—N bonds from the film.
Owner:ASM JAPAN
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products