2872 results about "Crystallography" patented technology

The invention provides a liquid crystal composite for an active-matrix-addressed electro-optical display device and application of the liquid crystal composite. The liquid crystal compound comprises a compound with a general formula (I) which occupies 10 percent to 30 percent of the total weight of the liquid crystal composite, a compound with a general formula (II) which occupies 5 percent to 30 percent of the total weight of the liquid crystal composite, a compound with a general formula (III) which occupies 10 percent to 40 percent of the total weight of the liquid crystal composite, and a compound with a general formula (IV) which occupies 10 percent to 60 percent of the total weight of the liquid crystal composite. The liquid crystal composite provided by the invention has a relatively high response speed and good low temperature storage stability. The invention further provides the active-matrix-addressed electro-optical display device comprising the liquid crystal composite.

The invention belongs to the technical field of optical materials, and discloses a holographic polymer dispersed liquid crystal composition, a holographic grating and a preparation method. The composition comprises the following components in parts by mass: 0.5-1.5 parts of a photoinitiator, 2-5 parts of a co-initiator, 15-20 parts of a first monomer, 15-20 parts of a second monomer, 10-15 parts of a third monomer, 10-15 parts of a solvent and 10-20 parts of mixed liquid crystal. Wherein the first monomer is a monofunctional acrylic monomer, the second monomer is a bifunctional acrylic monomer, the third monomer is a polyfunctional acrylic monomer, the mixed liquid crystal comprises 10-25 wt% of a monomer liquid crystal and 75-90 wt% of a nematic liquid crystal, and the monomer liquid crystal contains fluorine as a benzene ring substituent and contains cyano or isothiocyano as an end group. Through cooperation of the monomer liquid crystal and the nematic liquid crystal in the mixed liquid crystal and cooperation of fluorine atoms and cyano / isothiocyano groups in the monomer liquid crystal, the holographic grating prepared from the composition has the characteristics of low haze and high diffraction efficiency, and the grating can be thinner, so that the requirements of light weight and clearness of AR glasses can be met.

The invention belongs to the technical field of solar cells, and relates to a perovskite laminated cell and a preparation method thereof, the perovskite laminated cell can reduce light parasitic absorption, the perovskite laminated cell comprises a bottom crystalline silicon cell, the bottom crystalline silicon cell comprises a substrate, the substrate comprises a first surface and a second surface which are opposite to each other, a first tunneling oxide layer and a first composite passivation layer are sequentially arranged on the first surface in the direction perpendicular to and away from the first surface, and the first composite passivation layer comprises first doped crystalline silicon conductive regions and first wide-band gap conductive regions which are alternately arranged in the direction parallel to the first surface; the top perovskite cell is arranged on the first composite passivation layer and is electrically connected with the bottom crystalline silicon cell, and the top perovskite cell comprises a hole transport layer, a perovskite active absorption layer, an electron transport layer, an interface buffer layer, a transparent conductive layer and an anti-reflection layer which are sequentially far away from the first composite passivation layer; and a first electrode in electrical contact with the transparent conductive layer.

The invention relates to a method for improving epitaxial growth quality of a tunnel junction cascade semiconductor laser. The invention innovatively provides a strain superlattice gradient repair technology. By designing a low-temperature low-speed nucleation-high-temperature high-speed epitaxy composite growth mode, a periodic superlattice buffer layer is introduced to a tunnel junction interface. Wherein lattice strain relaxation is achieved at the rate of 0.5-2 / s in the low-temperature stage, defect coverage is completed at the rate of 4-8 / s in the high-temperature stage, and dislocation line bending is terminated on a superlattice interface through thermodynamic regulation and control. Compared with the traditional process, the scheme can obviously improve the crystal quality, and does not increase the specific contact resistance of the tunnel junction interface.

Disclosed is a liquid crystal composition. The liquid crystal composition includes liquid crystal molecules including at least one of a liquid crystal compound having an alkenyl group and a liquid crystal compound having an alkoxy group, and a first stabilizer including a compound having a structure represented by Formula 1:where n is 0 or 1; m is 0 or 1; k is 0 or 1; Z1, Z2, and Z3 are each independently a single bond, —C═C—, —OCO—, —COO—, —CF2O—, or a C1 to C5 alkylene group; X1, X2, X3, and X4 are each independently hydrogen or halogen; Y is hydrogen, an alkylene group, an alkoxy group, a hydroxyl group, —NHCOCH3, or ═O; and A and B are cyclic compounds.

The invention provides a liquid crystal aligning agent, a liquid crystal alignment film, a liquid crystal display element and a manufacturing method of the liquid crystal aligning agent. The liquid crystal aligning agent can obtain a liquid crystal alignment film which has excellent adhesion and can inhibit AC ghosting at a high level. A liquid crystal aligning agent containing a polymer component P containing one or more polymers, a compound C1, and a compound C2, the polymer component P containing at least one polymer p selected from the group consisting of polyimide precursors and polyimides that are imides of the polyimide precursors. Compound C1 is a compound having two or more structures represented by formula (c-1). The compound C2 is a compound represented by formula (c-2).

Methods for fabricating branched substrates having conductive contact pads and hybrid dielectric bonding surfaces for directly bonding dies and electrically connecting them to the contact pads. A branched substrate can include a main portion and one or more branch portions hybrid bonded to the main portion. Some sections of the branched substrate can be flexible to allow deformable electrical connection between components that are hybrid bonded to different regions of the branched substrate. A flexible branch portion may provide electrical connection between vertically separated layers of two components. The method includes directly bonding a branch portion of the branched substrate to the main portion of the branched substrate via a hybrid bonding interface comprising a conductive interface between contact pads of the main and branch portions and a hybrid bonded dielectric interface between dielectric surfaces of the of the main and branch portions.

The invention provides a lead zirconate titanate composite film with a high electro-optical coefficient, a preparation method of the lead zirconate titanate composite film and an electro-optical modulator, the lead zirconate titanate composite film comprises an insulating substrate, a buffer layer and a ferroelectric main body layer which are sequentially stacked, and the buffer layer is a lanthanum-doped lead zirconate titanate film; the ferroelectric main body layer is a lead zirconate titanate thin film and has (001) / (100) orientation. The composite film has a relatively high electro-optical coefficient, relatively low driving voltage and relatively high thermal stability.

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell capable of reducing the thickness difference between an N-type region and a P-type region and preparation and application of the back contact cell capable of reducing the thickness difference between the N-type region and the P-type region. Wherein the surface of one side, far away from the crystalline silicon substrate, of the amorphous silicon layer is provided with an N-type region and a P-type region which are alternately formed, the N-type region comprises an N-type doped base layer and an N-type transition layer, and the P-type region comprises a P-type doped base layer and a P-type transition layer; wherein the content ratio of phosphorus to silicon in the N-type doped base layer is smaller than 1, the content ratio of phosphorus to silicon in the N-type transition layer is larger than 1, the content ratio of boron to silicon in the P-type doped base layer is smaller than 1, and the content ratio of boron to silicon in the P-type transition layer is larger than 1. The vertical contact resistance can be obviously reduced while the thickness difference between the N-type region and the P-type region is reduced, the high cell conversion efficiency is obtained, the stability of the cell is improved, and the service life of the cell is prolonged; meanwhile, the risk of film explosion in the subsequent process is reduced, and the edge compounding problem is relieved.

Provided is a SiC polycrystal manufacturing method based on a sublimation recrystallization method using a SiC seed crystal. In the method, a polycrystalline SiC substrate that is a SiC polycrystal produced by a sublimation recrystallization method and contains a greater amount of α-SiC than β-SiC is used as the SiC seed crystal.

The invention discloses a bionic shaddock peel vibration reduction and energy absorption structure and a preparation method thereof, and relates to the technical field of aircrafts, a gradient chiral shaddock structure GCCS comprises a contact layer, a transition layer and a supporting layer, each layer comprises three bionic chiral shaddock structures, the three structures comprise a bionic chiral grapefruit structure-L type, a bionic chiral grapefruit structure-Q type and a bionic chiral grapefruit structure-D type. Three bionic shaddock peel dot matrix structures with porous characteristics and chiral spiral characteristics are created on the basis of a shaddock peel surface microstructure and chiral spiral characteristics existing at tendrils of natural climbing plants; the three bionic chiral grapefruit structures are combined into the gradient grapefruit chiral structure with negative honeycomb gradient change by reference to a macroscopic gradient strategy, and compared with a traditional lattice structure, the gradient grapefruit chiral structure is more excellent in mechanical bearing performance and vibration reduction performance.

A compound of Formula Ir(LA)x(LB)y(LC)z is provided where x and y are independently 1 or 2; z is 0 or 1; and x+y+z=3; first ligand LA includes a structure of Formula I,ligand LB includes a structure of Formula II:and ligand LC is a bidentate ligand. In the compounds, moiety B is a polycyclic fused ring system comprising at least four rings; each of moiety C and moiety D is a monocyclic ring or a polycyclic fused ring system; each of X1 to X4 and Z1 to Z6 is C or N; L0 is a direct bond or a linking group; YA is a linking group; each substituent is hydrogen or a General Substituent defined herein; and any two substituents may be joined or fused to form a ring. Formulations, OLEDs, and consumer products containing the compound are also provided.

The invention belongs to the field of photovoltaic modules, and discloses a perovskite crystalline silicon laminated photovoltaic module and a preparation method thereof.The photovoltaic module comprises front plate glass, and a top cell perovskite layer, a first adhesive film layer, a bottom cell crystalline silicon cell layer, a second adhesive film layer and back plate glass are sequentially laid on one side of the front plate glass; the edges of the top cell perovskite layer, the first adhesive film layer, the bottom cell crystalline silicon cell layer and the second adhesive film layer are wrapped and sealed through a composite frame, the composite frame comprises a substrate with the wall thickness of 0.1-2mm, the surface of the substrate is provided with an anodic oxide layer with the thickness of 4-6mu m, and the surface of the anodic oxide layer is covered with a polyimide layer with the thickness of 30-1mm. The laminated photovoltaic module adopts the composite frame to replace the existing butyl rubber for sealing, so that the metalized edge sealing is perfectly fused into the low-temperature laminating process, the sealing performance is superior to that of the butyl rubber, and the service life of the laminated photovoltaic module is prolonged.

The invention belongs to the technical field of SiC crystal growth, and particularly relates to a thermal field component for SiC crystal growth and a preparation method of the thermal field component. The thermal field component comprises a thermal field component body, and the thermal field component body is made of a porous tantalum carbide material. The thermal field component can efficiently filter carbon particles, has corrosion resistance and long service life, and can remarkably reduce the production cost.

Provided are: a liquid crystal aligning agent which contains two or more polyamic acids and in which deterioration in liquid crystal aligning properties when stored at room temperature is suppressed; a liquid crystal alignment film obtained from the liquid crystal aligning agent; and a liquid crystal display element. The liquid crystal aligning agent is characterized by containing the following polymer (A) and polymer (B). Polymer (A): a polyamic acid (A) having a structural unit derived from a tetracarboxylic acid derivative and a structural unit derived from a diamine, the polyamic acid containing, as the structural unit derived from the tetracarboxylic acid derivative, a structural unit (a-1Ta) represented by formula (1Ta), and containing, as the structural unit derived from the diamine, a structural unit (a-1Da) represented by formula (1Da), at least a part of the terminal of the polyamic acid (A) contains a non-amino group, the non-amino group is a functional group represented by structural formula (E), and the presence rate of the terminal amino group in the polyamic acid (A) is 60% or less based on the total terminal of the polyamic acid (A). Polymer (B): a polyamic acid (B) having a structural unit derived from a tetracarboxylic acid derivative and a structural unit derived from a diamine, the polyamic acid including a structural unit (b-1Tb) represented by formula (1Tb) as the structural unit derived from the tetracarboxylic acid derivative, and including a structural unit (b-1Db) represented by formula (1Db) as the structural unit derived from the diamine. (Definition of each symbol is as defined in the specification) (Definition of each symbol is as defined in the specification) (Definition of each symbol is as defined in the specification) (Definition of each symbol is as defined in the specification)

A device for crystal growth and a crystal growth method. The device comprises a seed crystal holder, a seed crystal connecting rod, and a state detection assembly. The seed crystal holder is connected to one end of the seed crystal connecting rod, and the state detection assembly is configured to detect a seed crystal holder state of the seed crystal holder, wherein the seed crystal holder state reflects the state of the seed crystal holder relative to a melt, and the melt is used for crystal growth.

Provided is a laminate structure 10, including: a crystalline oxide semiconductor film 11 containing In as a main component; and an insulating film 12 laminated in contact with the crystalline oxide semiconductor film 11, wherein the crystalline oxide semiconductor film has one or more regions continuing 3 nm or more in the film thickness direction and the region has a rare gas concentration within a range of 0.5 at % or more and less than 5 at %.

The present disclosure discloses a high-temperature and high-pressure preparation method for hexagonal diamond, which belongs to the field of superhard material synthesis technology. The method comprises making high-purity graphite into a precursor, assembling the synthesis block, and then subjecting it to heating, pressurizing, temperature holding, and pressure holding processes to obtain hexagonal diamond. The preparation method for hexagonal diamond according to the present disclosure allows high-purity graphite to achieve higher pressure along the c-axis direction, further promoting the phase transition of graphite. In addition, the temperature field where the precursor is located has a certain temperature gradient, which facilitates the transformation of high-purity graphite into hexagonal diamond and achieves a better conversion rate of hexagonal diamond.

This application belongs to the field of luminescent materials technology, and particularly relates to a Mn 4+ Activated high-entropy fluoride red luminescent materials, their preparation methods, and applications. Including materials with the molecular formula A2X. 1‑y F6:yMn 4+ BX 1‑ y F6:yMn 4+ C3X 1‑y F6:yMn 4+ D2X 1‑y F7:yMn 4+ At least one luminescent material, wherein the A-site, C-site, and D-site are each independently selected from NH4. + Li + Na + K + 、Rb + Cs + (CH3)4N + At least one of the following: B site is selected from Ba and / or Zn; each luminescent material contains at least four metal elements at the X site, with the molar ratio of each metal element ranging from 5% to 35%, and y in each luminescent material independently satisfies 0 < y < 0.5. Through compositional design, the high-entropy fluoride matrix exhibits high disorder and large lattice distortion, which is Mn 4+ It provides a low-symmetry lattice environment, enhances radiative transitions, and significantly improves the luminescence efficiency and optical performance of various luminescent materials.

Compositions in homogenised powder form consisting of hydroxypropyl methylcellulose particles, and at least one chemical signalling agent in particle form, and optionally a biologically active agent, wherein the homogenised powder comprises particles having a mean particle diameter of ≥20 μm to ≤500 μmm uses and kits therefor.

The invention discloses a perovskite / crystalline silicon laminated solar cell, a preparation method thereof and a photovoltaic module. The perovskite / crystalline silicon laminated solar cell provided by the invention comprises a perovskite top cell, a crystalline silicon bottom cell and a composite layer used for connecting the perovskite top cell and the crystalline silicon bottom cell, the perovskite top cell comprises a composite hole transport layer, the composite hole transport layer comprises a first hole transport layer and a second hole transport layer, and the first hole transport layer is in contact with the composite layer; the first hole transport layer is obtained by sputtering a nickel oxide target material by introducing H2 in an oxygen-free sputtering atmosphere, and the second hole transport layer is obtained by sputtering the nickel oxide target material in a hydrogen-free atmosphere. According to the perovskite / crystalline silicon laminated solar cell provided by the invention, the composite hole transport layer can realize better contact matching with the middle composite layer, better charge extraction and collection are carried out on the perovskite light absorption layer, and meanwhile, the perovskite / crystalline silicon laminated solar cell has better conductivity.

A method for forming a semiconductor structure includes forming a metal-insulator-metal (MIM) structure between first passivation layers over a substrate. The method also includes forming a via structure through the MIM structure and the first passivation layers. The method also includes planarizing the via structure. The method also includes forming an RDL structure over the via structure. The method also includes forming a second passivation layer over the RDL structure and the first passivation layers.

A method includes forming a fin protruding from a substrate, the fin including an epitaxial stack over a fin base and a hard mask layer over the epitaxial stack, the epitaxial stack including first and second semiconductor layers of different material compositions, performing a first etching process to etch the hard mask layer, the first etching process including applying a first combination of etchants, performing a second etching process to etch the epitaxial stack, the second etching process including applying a second combination of etchants, and performing a third etching process to etch the fin base, the third etching process including applying a third combination of etchants. The first, second, and third combinations of etchants are different from each other.

The invention discloses a semiconductor structure and a forming method thereof. The forming method comprises the following steps: providing a substrate; forming a copper column structure on the substrate, wherein the copper column structure comprises a plurality of layers of copper column sections which are sequentially stacked and connected; the forming method of the copper column structure comprises the steps that a plurality of photoetching electroplating processes are carried out on a substrate, a layer of copper column section is formed in each photoetching electroplating process, and then the thickness of a photoetching layer formed in each photoetching electroplating process can be reduced, so that the technological difficulty of forming the photoetching layer and photoetching development is reduced. And the electroplating time of each layer of copper cylinder section is effectively shortened compared with the time of electroplating the whole copper cylinder at one time, so that the phenomena of swelling, cracking and the like of the photoetching layer in the electroplating operation for a long time can be avoided. The depth-to-width ratio of the single-layer copper column section is small, the exchange efficiency of copper plating liquid medicine can be guaranteed, and then the copper nodule phenomenon is reduced. And the copper column structure is divided into multiple layers of copper column sections, so that the height limitation of electroplating the whole copper column at a time can be broken through, and the copper column structure has higher designability.

The invention provides a single crystal silicon rod drawing method and system based on dynamic parameter linkage, and the method comprises the steps: implementing a temperature gradient dynamic control strategy according to different stages of single crystal silicon rod drawing; a linkage strategy of a rotation rate and a pulling speed is adopted, and the rotation rate of the seed crystal is kept at a high rotation speed in the initial stage of pulling to stabilize a melt interface; meanwhile, a stepped dynamic adjustment strategy is adopted for the lifting speed, low-speed lifting is kept in the initial stage so as to ensure the melt stability, and then the lifting speed is linearly increased according to the increase of the diameter of the silicon rod; and the crucible lifting speed is adjusted in real time based on a self-adaptive adjustment strategy, so that the crucible lifting speed and the increase of the diameter of the silicon rod are kept synchronous, the stability of the melt liquid level height is maintained, and the fluctuation of the dopant concentration is prevented. By dynamically adjusting the temperature gradient, the rotation rate, the pulling speed and the crucible lifting speed, thermal stress is reduced, melt convection is stabilized, the radial uniformity of the silicon wafer is improved, and the requirements of a BC battery for low-defect and high-uniformity doping are met.

The present application provides a carbon material, a method for preparing the same, and a secondary battery and an electrical device comprising the same. The carbon material includes a pore structure, wherein the carbon material has 3R and 2H phases and satisfies 0<I3R(101) / I2H(004)≤0.100, in which I3R(101) is the diffraction peak intensity of 101 crystallographic plane of the 3R phase in the X-ray diffraction pattern of the carbon material, and I2H(004) is the diffraction peak intensity of 004 crystallographic plane of the 2H phase in the X-ray diffraction pattern of the carbon material. The carbon material provided in the present application can make the secondary battery have high initial columbic efficiency and also good cycling and dynamic performances.