The invention relates to the technical field of
crystal material preparation, in particular to a ternary layered
selenide Ge3Sb4Se7
semiconductor material and a preparation method thereof. The preparation method of the ternary layered
selenide Ge3Sb4Se7
semiconductor material comprises the following steps that S001,
germanium powder,
antimony powder and
selenium powder with the
molar ratio being 3: 4: 7 serve as raw materials, the temperature is increased to 900-950 DEG C under the vacuum condition, and heat preservation is conducted for 12-24 h at the temperature; s002, after heat preservation is finished, the temperature is reduced to 475-500 DEG C at the
cooling rate of 1-5 DEG C / min, and heat preservation is conducted for 3-5 days at the temperature; and after heat preservation is finished, furnace cooling or
quenching cooling is performed to reach the
room temperature, and the layered ternary
selenide single-phase material with the
chemical formula being Ge3Sb4Se7 is obtained. The ternary layered selenide Ge3Sb4Se7
semiconductor material prepared by the invention is a single-phase material and has the characteristics of low
thermal conductivity and low resistivity, so that the ternary layered selenide Ge3Sb4Se7 semiconductor material has application potential in the fields of thermoelectric devices, photoelectric detection and the like.