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The present application describes engineered antibodies, with three or more functional antigen binding sites, and uses, such as therapeutic applications, for such engineered antibodies.

Disclosed are methods and compositions for producing heterologous disulfide bond containing polypeptides in bacterial cells. In preferred embodiments the methods involve co-expression of a prokaryotic disulfide isomerase, such as DsbC or DsbG and a gene encoding a recombinant eukaryotic polypeptide. Exemplary polypeptides disclosed include tissue plasminogen activator.

Disclosed herein are modified plant zinc finger proteins; compositions comprising modified plant zinc finger proteins and methods of making and using modified plant zinc finger proteins. The modified plant zinc finger proteins, in contrast to naturally-occurring plant zinc finger proteins, have a binding specificity that is determined by tandem arrays of modular zinc finger binding units.

A method for forming a silicone polymer insulation film having a low relative dielectric constant, high thermal stability and high humidity-resistance on a semiconductor substrate is applied to a plasma CVD apparatus. The first step is introducing a silicon-containing hydrocarbon compound expressed by the general formula SialphaObetaCxHy (alpha, beta, x, and y are integers) to the reaction chamber of the plasma CVD apparatus. The silicon-containing hydrocarbon compound has at most two O-CnH2n+1 bonds and at least two hydrocarbon radicals bonded to the silicon. The residence time of the material gas is lengthened by, for example, reducing the total flow of the reaction gas, in such a way as to form a silicone polymer film having a micropore porous structure with a low relative dielectric constant.

In a multi-layer interconnection structure, the wiring length is to be reduced, and the interconnection is to be straightened, at the same time as measures need to be taken against radiation noise. To this end, there is disclosed a semiconductor device in which plural semiconductor substrates, each carrying semiconductor elements, are bonded together. On each semiconductor substrate is deposited an insulating layer through which is formed a connection wiring passed through the insulating layer so as to be connected to the interconnection layer of the semiconductor element. On a junction surface of at least one of the semiconductor substrates is formed an electrically conductive layer of an electrically conductive material in which an opening is bored in association with the connection wiring. The semiconductor substrates are bonded together by the solid state bonding technique to interconnect the connection wirings formed on each semiconductor substrate.

To provide a novel metal complex suitable as a compound for an organic EL device. A metal complex including a partial structure represented by the following general formula (1): in which R in the general formula (1) has a partial structure represented by the following general formula (2) or (3).

In order to fabricate a high performance thin film semiconductor device using a low temperature process in which it is possible to use low price glass substrates, a thin film semiconductor device has been fabricated by forming a silicon film at less than 450 DEG C., and, after crystallization, keeping the maximum processing temperature at or below 350 DEG C. In applying the present invention to the fabrication of an active matrix liquid crystal display, it is possible to both easily and reliably fabricate a large, high-quality liquid crystal display. Additionally, in applying the present invention to the fabrication of other electronic circuits as well, it is possible to both easily and reliably fabricate high-quality electronic circuits.

A process for producing nano-scaled graphene plates with each plate comprising a sheet of graphite plane or multiple sheets of graphite plane with the graphite plane comprising a two-dimensional hexagonal structure of carbon atoms. The process includes the primary steps of: (a) providing a powder of fine graphite particles comprising graphite crystallites with each crystallite comprising one sheet or normally a multiplicity of sheets of graphite plane bonded together; (b) exfoliating the graphite crystallites to form exfoliated graphite particles, which are characterized by having at least two graphite planes being either partially or fully separated from each other; and (c) subjecting the exfoliated graphite particles to a mechanical attrition treatment to further reduce at least one dimension of the particles to a nanometer scale, <100 nm, for producing the nano-scaled graphene plates.

The invention concerns the three-dimensional scanning of interior surfaces or cavities of limited dimensions or with restricted accessibility by providing a probe-shaped non-contact adpated to perform a scan 360° around the axis of the probe and a method for scanning. The invention furthermore relates to the creation of high precision three-dimensional replicas of real objects using 3-D scan data obtainable with the scanner according to the invention. Furthermore, the invention relates to a specific embodiment for scanning the human ear and ear canal.

In many processes used in fabricating semiconductors the wafer is seated on the top surface of a pedestal and heated in a high energy process step, such as plasma etching. The pedestal, chuck or platen may be cooling but the wafer gradually heats until the process can no longer continue. Where large, e.g. 300 mm diameter, wafers are being processed the temperature level across the wafer is difficult to maintain substantially constant. In this system and method the lateral temperature distribution is equalized by a heat sink structure in a chamber immediately under the wafer support on top of the pedestal. A number of spatially distributed wicking posts extend downwardly from a layer of wicking material across the top of the chamber, into a pool of a vaporizable liquid. At hot spots, vaporized liquid is generated and transported to adjacent condensation posts extending up from the liquid. The system thus passively extracts heat to equalize temperatures while recirculating liquid and assuring adequate supply. The free volume above and within the liquid, and the short distances between posts, assure adequate heat transfer rates.

The present application relates to anti-PD-L1 antibodies or antigen binding fragments thereof, nucleic acid encoding the same, therapeutic compositions thereof, and their use to enhance T-cell function to upregulate cell-mediated immune responses and for the treatment of T cell dysfunctional disorders, such as tumor immunity, for the treatment of and cancer.

A plasma processing system has a susceptor, provided in a processing vessel, for supporting thereon a substrate. A process gas is supplied into the processing vessel to produce the plasma of the process gas. The susceptor has a dielectric film formed on a base, and a plurality of protrusions formed on the film. The protrusions of the susceptor are formed by thermal-spraying a ceramic onto the dielectric film via an aperture plate having a plurality of circular apertures.

The invention provides mechanisms useful for adjusting the positioning of an attached device, such as a display or input device. In one embodiment, the mechanism is a front end height adjustment mechanism comprising a track apparatus, a display mounting bracket, a sliding bracket, and a motion regulating device. In another embodiment, the mechanism comprises a device support arm, such as a monitor arm. The invention further provides a method for adjusting the positioning of a display or input device, such as a flat screen monitor, wherein the method comprises providing a mechanism of the invention, attaching the mechanism to a support, attaching a display or input device to the mechanism, and positionally adjusting the display or input device.

This invention relates to materials and processes for thin film deposition on solid substrates. Silica / alumina nanolaminates were deposited on heated substrates by the reaction of an aluminum-containing compound with a silanol. The nanolaminates have very uniform thickness and excellent step coverage in holes with aspect ratios over 40:1. The films are transparent and good electrical insulators. This invention also relates to materials and processes for producing improved porous dielectric materials used in the insulation of electrical conductors in microelectronic devices, particularly through materials and processes for producing semi-porous dielectric materials wherein surface porosity is significantly reduced or removed while internal porosity is preserved to maintain a desired low-k value for the overall dielectric material. The invention can also be used to selectively fill narrow trenches with low-k dielectric material while at the same time avoiding deposition of any dielectric on the surface area outside of the trenches.

A diffractive beam expander (50) comprises an input grating (10), a crossed grating (20), and an output grating (30) implemented on a planar transparent substrate (7). The crossed grating (20) comprises a plurality of diffractive features (23) arranged along the lines of a first set of parallel lines (25) and along the lines of a second set of parallel lines (26) such that the lines (25) of the first set are parallel to the lines (26) of the second set. The lines of the first set have a first grating period and the lines of the second set have a second grating period. A light beam (B1) coupled into the substrate (7) by the input grating (10) impinges on the crossed grating (20) at a first location (EC1) and further locations (EC2). Interaction at the first location (EC1) provides several sub-beams (S00, S01, S10) which propagate in different directions. Further interactions at second locations (EC2) provide further sub-beams (V01, U10) which propagate in the same direction as the original in-coupled light (B1). Light is subsequently coupled out of the substrate (7) by the output grating (30) to provide a light beam (B2) which is expanded in two directions (SX, SZ) with respect to the beam (B0) impinging on the input grating. A virtual display device (200) may comprise said diffractive beam expander (50).

The invention relates to a semiconductor device including a plurality of thin film transistors provided on a base member having a curved surface. The surface may be bent in either a convex shape or a concave shape. All channel length directions of the plurality of thin film transistors may also be aligned in the same direction. Further, the channel length direction may be different from the direction in which the base member is bent. A pixel portion and a driver circuit portion may also be provided on the base member. The invention also includes a method of manufacturing a semiconductor device including forming a layer to be peeled including an element of a substrate, bonding a support member to the layer to be peeled, and bonding a transfer body to the layer to be peeled.

Disclosed are compositions and a method for amplification of nucleic acid sequences of interest. The disclosed method generally involves replication of a target sequence such that, during replication, the replicated strands are displaced from the target sequence by strand displacement replication of another replicated strand. In one form of the disclosed method, the target sample is not subjected to denaturing conditions. It was discovered that the target nucleic acids, genomic DNA, for example, need not be denatured for efficient multiple displacement amplification. The primers used can be hexamer primers. The primers can also each contain at least one modified nucleotide such that the primers are nuclease resistant. The primers can also each contain at least one modified nucleotide such that the melting temperature of the primer is altered relative to a primer of the same sequence without the modified nucleotide(s). The DNA polymerase can be φ29 DNA polymerase.

The invention is directed to conductive polymer compositions, catalytic ink compositions (e.g., for use in screen-printing), electrodes produced by deposition of an ink composition, methods of making, and methods of using thereof. An exemplary ink material comprises platinum black and / or platinum-on-carbon as the catalyst, graphite as a conducting material, a polymer binding material, and an organic solvent. The polymer binding material is typically a copolymer of hydrophilic and hydrophobic monomers. The conductive polymer compositions of the present invention can be used, for example, to make electrochemical sensors. Such sensors can be used in a variety of analyte monitoring devices to monitor analyte amount or concentrations in subjects, for example, glucose monitoring devices to monitor glucose levels in subjects with diabetes.

Disclosed is a non-flat liquid crystal display (LCD) element having a liquid crystal, a sealing wall and paired substrates opposed to each other such that a major surface of the LCD element has a non-flat form. In an aspect, spacers are disposed between the substrates, and a spacer density in a predetermined region is different from that in at least a portion of the other region. In another aspect, resin structures are disposed between the substrates and are adhered to the substrates, and a resin structure adhesion area, per unit area of the substrate, with respect to the substrate in a predetermined region is different from that in at least a portion of the other region. In further another aspect, at least one of pixel form, size and arrangement pitch in a predetermined region is different from that in at least a portion of the other region. In further another aspect, the resin structures are disposed between the substrates, and at least one of resin structure form, size and arrangement pitch in a predetermined region is different from that in at least a portion of the other region. Also disclosed is a method of producing a non-flat LCD element. The method includes the steps of: holding a liquid crystal between paired flat substrates to produce a flat LCD element having an entirely flat form; and deforming the flat LCD element into a predetermined non-flat form.

Novel methods for producing, and compositions of, humanized immunoglobulins having one or more complementarity determining regions (CDR's) and possible additional amino acids from a donor immunoglobulin and a framework region from an accepting human immunoglobulin are provided. Each humanized immunoglobulin chain will usually comprise, in addition to the CDR's, amino acids from the donor immunoglobulin framework that are, e.g., capable of interacting with the CDR's to effect binding affinity, such as one or more amino acids which are immediately adjacent to a CDR in the donor immunoglobulin or those within about about 3Å as predicted by molecular modeling. The heavy and light chains may each be designed by using any one or all of various position criteria. When combined into an intact antibody, the humanized immunoglobulins of the present invention will be substantially non-immunogenic in humans and retain substantially the same affinity as the donor immunoglobulin to the antigen, such as a protein or other compound containing an epitope.

A diffractive beam expander (50) comprises an input grating (10), a crossed grating (20), and an output grating (30) implemented on a planar transparent substrate (7). The crossed grating (20) comprises a plurality of diffractive features (23) arranged along the lines of a first set of parallel lines (25) and along the lines of a second set of parallel lines (26) such that the lines (25) of the first set are parallel to the lines (26) of the second set. The lines of the first set have a first grating period and the lines of the second set have a second grating period. A light beam (B1) coupled into the substrate (7) by the input grating (10) impinges on the crossed grating (20) at a first location (EC1) and further locations (EC2). Interaction at the first location (EC1) provides several sub-beams (S00, S01, S10) which propagate in different directions. Further interactions at second locations (EC2) provide further sub-beams (V01, U10) which propagate in the same direction as the original in-coupled light (B1). Light is subsequently coupled out of the substrate (7) by the output grating (30) to provide a light beam (B2) which is expanded in two directions (SX, SZ) with respect to the beam (B0) impinging on the input grating. A virtual display device (200) may comprise said diffractive beam expander (50).

Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm−2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.

The present invention provides an optical fiber structure that allows for reliable and easy branching of optical fibers, as well as a method of manufacturing such optical fiber structure. The optical fiber structure proposed by the present invention is characterized by a structure wherein multiple optical fiber units, each comprising multiple optical fibers that are aligned two-dimensionally in such a way that one side is covered by a first covering body, are aligned so that the covered surfaces face the same direction, and the covered or uncovered surfaces of the multiple optical fiber units are integrally covered by a second covering body. The second covering body should preferably be made of silicone rubber having a tearing strength of 29 kgf / cm or below.

A method for producing recombinant adeno-associated virus in the absence of contaminating helper virus or wild-type virus involves culturing a mammalian host cell containing a transgene flanked by adeno-associated virus (AAV) inverse terminal repeats and under the control of regulatory sequences directing expression thereof, an AAV rep sequence and an AAV cap sequence under the control of regulatory sequences directing expression thereof, and the minimum adenovirus DNA required to express an E1a gene product, an E1b gene product and an E2a gene product, and isolating therefrom a recombinant AAV which expresses the transgene in the absence of contaminating helper virus or wildtype AAV. This method obviates a subsequent purification step to purify rAAV from contaminating virus. Also provided are various embodiments of the host cell.

Affords a GaN substrate from which enhanced-emission-efficiency light-emitting and like semiconductor devices can be produced, an epi-substrate in which an epitaxial layer has been formed on the GaN substrate principal surface, a semiconductor device, and a method of manufacturing the GaN substrate. The GaN substrate is a substrate having a principal surface with respect to whose normal vector the [0001] plane orientation is inclined in two different off-axis directions.

A method for generating a three-dimensional model of a part of the body with the aid of a medical and / or surgical navigation system, comprising the steps of identifying to the navigation system landmarks on the part of the body that are characteristic of the model of the part of the body; obtaining at least two fluoroscopy image data sets for each of one or more predetermined, individual and delimited regions of the part of the body; ascertaining characteristic body part data by processing and combining the landmark positions and parameters of the fluoroscopy data sets; and generating a three-dimensional and positionally determined model of the part of the body from the characteristic body part data.

A field effect transistor which includes, on a substrate, at least a semiconductor layer, a passivation layer for the semiconductor layer, a source electrode, a drain electrode, a gate insulating film and a gate electrode, the source electrode and the drain electrode being connected through the semiconductor layer, the gate insulating film being present between the gate electrode and the semiconductor layer, the passivation layer being at least on one surface side of the semiconductor layer, and the semiconductor layer including a composite oxide which comprises In (indium), Zn (zinc) and Ga (gallium) in the following atomic ratios (1) to (3):In / (In+Zn)=0.2 to 0.8  (1)In / (In+Ga)=0.59 to 0.99  (2)Zn / (Ga+Zn)=0.29 to 0.99  (3).