13532results about "Coupling light guides" patented technology

A chip package includes a housing, one or more electrical connections coupled to an exterior of the housing, a photonic integrated circuit, and a scanning unit. Both the photonic integrated circuit and the scanning unit are disposed within the housing. The photonic integrated circuit has at least one waveguide designed to guide a beam of light. The scanning unit is designed to laterally scan the beam of light across a focal plane outside of the housing. The scanning unit is aligned with the photonic integrated circuit such that the beam of light is coupled between the photonic integrated circuit and the scanning unit.

A package comprises a photonic integrated circuit (PIC) with a modulator having a first modulator input, and a PIC interconnect region within two millimeters or fifty microns from the modulator. Additionally, an electric integrated circuit (EIC) is included with a driver circuit and an EIC interconnect region within two millimeters or fifty microns from the driver circuit. The driver circuit is electrically connected to the first modulator input via the EIC interconnect region, a first metal interconnect, and the PIC interconnect region. The modulator receives a temperature-dependent bias voltage, where the temperature dependence of the bias voltage inversely matches the temperature dependence of the modulator across an extended temperature range.

A package comprises a photonic integrated circuit (PIC) with a modulator having a first modulator input, and a PIC interconnect region within two millimeters or fifty microns from the modulator. Additionally, an electric integrated circuit (EIC) is included with a driver circuit and an EIC interconnect region within two millimeters or fifty microns from the driver circuit. The driver circuit is electrically connected to the first modulator input via the EIC interconnect region, a first metal interconnect, and the PIC interconnect region. The modulator receives a temperature-dependent bias voltage, where the temperature dependence of the bias voltage inversely matches the temperature dependence of the modulator across an extended temperature range.

Disclosed herein is a waveguide-based display comprising: a waveguide, a source of image modulated light projected over a field of view; an input coupler for coupling said light into a total internal reflection (TIR) path within the waveguide; and a grating structure for providing beam expansion of the TIR light in at least one direction and extracting the TIR light from the waveguide. The grating structure may include a plurality of grating elements having at least two different grating prescriptions and at least one surface relief grating formed by a phase separation process.

Microelectronic assemblies including photonic integrated circuits (PICs), related devices and methods, are disclosed herein. For example, in some embodiments, a photonic assembly may include a PIC in a first layer including an insulating material, wherein the PIC is embedded in the insulating material with an active surface facing up; a conductive pillar in the first layer; an integrated circuit (IC) in a second layer on the first layer, wherein the second layer includes the insulating material and the IC is embedded in the insulating material, and wherein the IC is electrically coupled to the active surface of the PIC and the conductive pillar; an optical component optically coupled to the active surface of the PIC; and a hollow channel surrounding the optical component, the hollow channel extending from the active surface of the PIC through the insulating material in the second layer.

A package comprises a photonic integrated circuit (PIC) with a modulator having a first modulator input, and a PIC interconnect region within two millimeters or fifty microns from the modulator. Additionally, an electric integrated circuit (EIC) is included with a driver circuit and an EIC interconnect region within two millimeters or fifty microns from the driver circuit. The driver circuit is electrically connected to the first modulator input via the EIC interconnect region, a first metal interconnect, and the PIC interconnect region. The modulator receives a temperature-dependent bias voltage, where the temperature dependence of the bias voltage inversely matches the temperature dependence of the modulator across an extended temperature range.

A photonic integrated circuit (PIC) disposed on a substrate and comprising a semiconductor die hosting an active portion and a passive portion mutually coupled, the active portion being configured to consume electrical power when activated, and the passive portion comprising an optical transmission medium configured to propagate an optical signal to or from the active portion of the PIC; an electronic integrated circuit (EIC) electrically coupled to the active portion of the PIC and comprising components that electrically operate on the active portion of the PIC; and a packaging compound at least partially encapsulating the PIC, the packaging compound defining a cavity on a side of the semiconductor die that is opposite from the substrate, the cavity being filled with an optically transparent medium such that the optical signal can be received from or transmitted to the passive portion of the PIC through the cavity.

The invention discloses a preparation method of a vertical comb-driven MEMS (Micro Electro Mechanical System) micromirror, which comprises the following steps of: forming a through alignment mark and a pre-etched comb structure on a device layer by using a first composite mask, and forming the through alignment mark and the pre-etched comb structure on the back surface of the device layer on a first substrate through a composite mask process, after the first substrate and the second substrate are bonded, the self-alignment composite mask of the comb tooth structure is aligned with the back face pre-etched comb tooth structure through the through alignment mark, high-precision alignment of the comb tooth structure is achieved, accumulated errors are avoided, and the yield of device preparation is improved.

A package comprises a photonic integrated circuit (PIC) with a modulator having a first modulator input, and a PIC interconnect region within two millimeters or fifty microns from the modulator. Additionally, an electric integrated circuit (EIC) is included with a driver circuit and an EIC interconnect region within two millimeters or fifty microns from the driver circuit. The driver circuit is electrically connected to the first modulator input via the EIC interconnect region, a first metal interconnect, and the PIC interconnect region. The modulator receives a temperature-dependent bias voltage, where the temperature dependence of the bias voltage inversely matches the temperature dependence of the modulator across an extended temperature range.

The invention provides a manufacturing method of an MEMS device and the MEMS device, and the manufacturing method comprises the steps: providing a first wafer which is provided with a groove; a protective layer is arranged in the groove; providing a second wafer, and bonding the second wafer and the first wafer to seal the groove to obtain a first cavity; the second wafer is etched to form a comb tooth structure, and the protection layer is used for protecting the comb tooth structure. According to the embodiment of the invention, the protection layer is arranged in the first cavity of the first wafer as a buffer layer, so that when the second wafer is etched to form the comb tooth structure, the plasma backwash in the over-etching stage can be reduced, the comb tooth structure is further protected, the damage to the bottom of the comb tooth caused by the backwash of etching particles is reduced and solved, and the service life of the comb tooth structure is prolonged. Therefore, the mechanical strength and the anti-failure capability of the device are enhanced.

An optical transceiver module and an optical cable module using the same are provided. The optical transceiver module: a substrate; at least one optical receiving device connected to the substrate; a plurality of optical transmitting devices connected to the substrate, wherein the optical transmitting devices comprise a plurality of first optical transmitting devices and a plurality of second optical transmitting devices, and the optical transmitting devices are misaligned to each other.

The utility model provides a photoelectric co-packaging structure and an optical module, and relates to the technical field of optical communication. The photoelectric co-packaging structure comprises a multi-layer circuit board, a photon integrated circuit chip and an anti-warping piece. An optical waveguide and an optical coupling port connected with the optical waveguide are arranged in the photon integrated circuit chip; and the optical coupling port is used for optically coupling with an optical element outside the photonic integrated circuit chip. The photon integrated circuit chip is flip-chip welded on the multilayer circuit board and is electrically connected with the multilayer circuit board. The anti-warping piece is arranged in the multi-layer circuit board; the projection of the photonic integrated circuit chip on the surface of the multilayer circuit board and the projection of the anti-warping piece on the surface of the multilayer circuit board are at least partially overlapped. The multi-layer circuit board is provided with the anti-warping piece, so that the packaging stress can be reduced, the warping deformation of the multi-layer circuit board and the photon integrated circuit chip is reduced, and the packaging quality and reliability are improved.

A method of assembling an optical device including: providing a photonic integrated circuit including a plurality of vertical-coupling elements disposed along a main surface of the photonic integrated circuit; attaching an optical subassembly to the photonic integrated circuit; removably connecting a fiber connector to a ferrule frame, in which the fiber connector is attached to an array of optical fibers; aligning the ferrule frame to the optical subassembly using an active alignment process; and securely connecting the ferrule frame to the optical subassembly after the active alignment process.

The invention provides a preparation method of an inertial sensor and the sensor. The preparation method comprises the following steps: sequentially forming a first cavity and a first oxide layer on a first silicon wafer; bonding the first silicon wafer and a second silicon wafer, wherein the second silicon wafer is a low-resistance silicon wafer; forming an inertia sensitive structure in the second silicon wafer; correspondingly forming a second cavity on a third silicon wafer, wherein the third silicon wafer is a low-resistance silicon wafer; bonding the third silicon wafer and the second silicon wafer; an isolation groove penetrating through the third silicon wafer is formed through etching, a conductive silicon column and an electric signal isolation ring are formed, and the conductive silicon column is connected with the inertia sensitive structure; and forming a sealing insulating layer on the surface of the third silicon wafer, and forming a signal lead-out pin in the sealing insulating layer. According to the scheme, thermal stress caused by thermal expansion coefficient mismatch among the three layers of wafers is reduced through an all-silicon wafer level packaging process, and the full-temperature characteristic of the device is greatly enhanced; and the preparation process flow is optimized, the process control difficulty is reduced, and the preparation cost is reduced.

An adapter to mate fiber optic ferrules to respective fiber optic ferrules in a fiber optic connector housing includes a main body having ferrule-side openings and connector-side openings to receive the fiber optic connectors. The adapter includes columns that extend between a top side and a bottom side of the main body, a plurality of triggers attached to the adapter, each of the plurality of triggers having a pair of trigger legs, the trigger legs positioned inside respective columns on opposing sides. There is also a holder extension groove oriented longitudinally in each column and configured to receive a holder extension of a fiber optic ferrule holder and a pair of ferrule stop pedestals on each column on opposite sides of each holder extension groove configured to seat the fiber optic ferrule when the fiber optic ferrule holder is fully inserted into the adapter.

The invention relates to the technical field of optical communication, in particular to a vapor chamber and an optical module. Heat generated by a heat source is absorbed through the lower shell, then heat absorbed by the lower shell is absorbed by the heat dissipation working medium in the steam cavity, the heat dissipation working medium is changed into a gas state from a liquid state after absorbing heat, and the gas-state heat dissipation working medium is adsorbed on the inner surface of the upper shell, is cooled into a liquid state again and returns to the bottom of the steam cavity again. Therefore, heat dissipation of a heat source in the optical module is realized. The interface contact thermal resistances are only between the heat source and the lower shell and between the upper shell and the external environment, the number of the interface contact thermal resistances on a heat transfer path is greatly reduced, the uniform temperature plate is arranged as a part of the optical module, an integrated enhanced heat dissipation structure is formed, the interface contact thermal resistances caused by split design are prevented from being increased, and the heat dissipation efficiency is improved. The heat dissipation performance of the whole optical module is improved, and the heat dissipation requirement of the high-speed optical module is met.

The optical module provided by the invention comprises a circuit board, a base, a first light emitting component, a second light emitting component, a first light receiving component and a second light receiving component. The surface of the circuit board is provided with a first notch part and a second notch part, and the base is embedded in the first notch part and the second notch part, so that the base is fixed on the circuit board. The first light emitting component and the second light emitting component are located on the top surface of the base. The first light emitting component and the second light emitting component are respectively located in different gap portions, so that the first light emitting component and the second light emitting component can utilize a circuit board routing space between the first gap portion and the second gap portion to increase the wiring area. The top surface of the base is used for bearing the first light emitting component and the second light emitting component, and the bottom surface of the base is used for bearing a first refraction piece in the first light receiving component and bearing two second refraction pieces at the terminal of the second light receiving component. The top surface and the bottom surface of the base are fully utilized, three-dimensional deployment and integrated deployment are achieved, wiring is better facilitated, and the occupied space of a circuit board is better reduced.

A package includes a bridging element (an OMIB), and first and second photonic paths, forming a bidirectional photonic path. The OMIB has first and second interconnect regions to connect with one or more dies. Third and fourth unidirectional photonic paths may couple between the first interconnect region and an optical interface (OI). A photonic transceiver has a first portion in the OMIB and a second portion in one of the dies. The first and the second portions may be coupled via an electrical interconnect less than 2 mm in length. The die includes compute elements around a central region, proximate to the second portion. The OMIB may include an electro-absorption modulator fabricated with germanium, silicon, an alloy of germanium, an alloy of silicon, a III-V material based on indium phosphide (InP), or a III-V material based on gallium arsenide (GaAs). The OMIB may include a temperature compensation for the modulator.

An apparatus includes a rackmount device, in which the rackmount device includes a housing configured to be installed in a server rack, in which the housing has a width in a range from 16 to 20 inches and a height in a range from 1 to 12 inches, the housing includes a front panel, a rear panel, and a bottom surface. The rackmount device includes a first circuit board or substrate having a first surface that defines a length and a width of the first circuit board or substrate, in which the first circuit board or substrate is positioned relative to the housing such that the first surface of the first circuit board or substrate is at an angle relative to the bottom surface of the housing, and the angle is in a range from 45° to 90°. At least one of (i) the front panel of the housing is formed at least in part by the first circuit board or substrate, (ii) the first circuit board or substrate is attached to the front panel of the housing, or (iii) the first circuit board or substrate is substantially parallel to the front panel of the housing. The rackmount device includes at least one data processor electrically coupled to the first circuit board or substrate and configured to process data; and at least one optical / electrical communication interface coupled to the first circuit board or substrate and configured to convert received optical signals to electrical signals that are provide to the at least one data processor. The rackmount device includes at least one of (i) at least one inlet fan attached to the front panel of the housing, or (ii) at least one fan positioned near the front panel in which at least a portion of a fan blade of the at least one fan is within a first distance from the front panel for at least some time period during operation of the at least one fan, and the first distance is less than one-fourth of a second distance between the front panel and the rear panel.

A package comprises a photonic integrated circuit (PIC) with a modulator having a first modulator input, and a PIC interconnect region within two millimeters or fifty microns from the modulator. Additionally, an electric integrated circuit (EIC) is included with a driver circuit and an EIC interconnect region within two millimeters or fifty microns from the driver circuit. The driver circuit is electrically connected to the first modulator input via the EIC interconnect region, a first metal interconnect, and the PIC interconnect region. The modulator receives a temperature-dependent bias voltage, where the temperature dependence of the bias voltage inversely matches the temperature dependence of the modulator across an extended temperature range.

Microelectronic assemblies including photonic integrated circuits (PICs), related devices and methods, are disclosed herein. For example, in some embodiments, a photonic assembly may include a PIC in a first layer including an insulating material, wherein the PIC has an active side and an opposing backside, and wherein the PIC is embedded in the insulating material with the active side facing down; a conductive pillar in the first layer; an integrated circuit (IC) in a second layer, wherein the second layer is on the first layer, wherein the second layer includes the insulating material and the IC is embedded in the insulating material in the second layer, and wherein the IC is electrically coupled to the backside of the PIC and the conductive pillar; and an optical component optically coupled to the active surface of the PIC.

The invention provides a pluggable optical interface structure, and relates to the technical field of optical device packaging, and the pluggable optical interface structure comprises a substrate which is at least provided with an optical chip, and the optical chip is connected with the substrate; and the optical fiber array unit is connected with the optical chip in a positioning and plugging manner, so that the optical fiber array unit is conducted with the optical chip. The optical fiber array unit and the optical chip are connected in a positioning and plugging manner, so that additional structures and steps required by active coupling such as position adjustment of the optical fiber array unit and the optical chip are not required, and the optical fiber array unit and the optical chip can be aligned in a high-precision and passive coupling manner in a positioning and plugging manner; as a structure required by active coupling does not need to be additionally arranged, the packaging process can be greatly simplified, product production and maintenance of use links are facilitated, the production operation efficiency is effectively improved, the product cost is reduced, and the competitiveness of the product is further enhanced.

The invention relates to the technical field of optical module coupling, and discloses optical module product double-Lens coupling equipment and a coupling method thereof.The coupling equipment comprises a jig module, a stock bin streamline module, a carrying module and two coupling modules arranged on the left side and the right side of the jig module, and the two coupling modules can be coupled with two Lens on an optical module product at the same time; an optical module clamping jaw of the carrying module can rotate around a Z axis, so that the direction of an optical module product reversely placed in a Tray can be corrected, and the coupling efficiency and quality of the optical module product are improved; in the coupling method, the stock bin streamline module can automatically provide and collect the Tray carrying the optical module product, and the carrying module can carry the optical module product between the stock bin streamline module and the jig module in a reciprocating manner, so that the coupling module can realize the coupling of the Lens and the optical module product, that is, the coupling method can coordinate the cooperation among the modules of the coupling equipment, and the coupling efficiency is improved. Therefore, the coupling logic is rigorous and orderly, and stable operation of the equipment is ensured.

The invention relates to the technical field of optical communication, and discloses FA coupling equipment and a coupling method thereof.A feeding and discharging part of the coupling equipment comprises a feeding streamline module, a carrying mechanism, a cleaning module and a detection module, a coupling part of the coupling equipment comprises a jig module, a coupling module and a dispensing vision module, an optical module and FA are clamped on an outer support together, and the optical module and the FA are arranged on the outer support. An MPO plug used in the coupling process is integrally clamped on an MPO clamp, automatic feeding and discharging of an optical module and an FA and automatic cleaning, wiping, detection and plugging of the end face of an MPO optical fiber jumper wire can be achieved through coupling equipment, dependence on personnel is reduced, the feeding and discharging difficulty is lowered, and dependence on the skill of an operator is lowered; through the coupling method, the product coupling working efficiency can be improved, the production quality stability is improved, the yield is improved, and the production cost is reduced.

A package includes a photonic integrated circuit (PIC) disposed on a substrate and comprising a semiconductor die hosting an active portion and a passive portion mutually coupled, the active portion being configured to consume electrical power when activated, and the passive portion comprising an optical transmission medium configured to propagate an optical signal to or from the active portion of the PIC; an electronic integrated circuit (EIC) electrically coupled to the active portion of the PIC and comprising components that electrically operate on the active portion of the PIC; and a packaging compound at least partially encapsulating the PIC, the packaging compound defining a cavity on a side of the semiconductor die that is opposite from the substrate, the cavity being filled with an optically transparent medium such that the optical signal can be received from or transmitted to the passive portion of the PIC through the cavity.

A device includes a photonic routing structure including a silicon waveguide, photonic devices, and a grating coupler, wherein the silicon waveguide is optically coupled to the photonic devices and to the grating coupler; an interconnect structure on the photonic routing structure, wherein the grating coupler is configured to optically couple to an external optical fiber disposed over the interconnect structure; and computing sites on the interconnect structure, wherein each computing site includes an electronic die bonded to the interconnect structure, wherein each electronic die of the computing sites is electrically connected to a corresponding photonic device of the photonic devices.