This invention discloses a carbon-doped device for
gallium arsenide single crystal growth, applied in the field of
single crystal growth. Utilizing the design of the
insertion cavity and exhaust channel, particulate matter from the
reaction interface is actively guided into the collection hood under the action of
airflow and gravity, preventing stagnation and ensuring sufficient contact between the
graphite column and the support disk interface. When the
reactive gas enters the suddenly increased volume of the collection hood from the narrow
insertion cavity, the flow rate drops sharply, thereby accelerating the
sedimentation of particulate matter. Furthermore, the large surface area of the inner wall of the collection hood can react and consume
graphite particles and melt and adhere
quartz particles, achieving wall-side
trapping. Through the step-by-step action of the above steps, the particulate matter content in the gas entering the
crystal growth zone is significantly reduced, improving
crystal purity. In addition, the removal effect of stripped particles is further improved by using guide cylinders one and two, in conjunction with a porous
quartz filter ring located inside the exhaust port.