55 results about "Charge discharge" patented technology

The invention provides a robust two-way stacked electrostatic protection circuit, which comprises a two-way stacked electrostatic protection module and a floating charge discharge module, and is characterized in that the two-way stacked electrostatic protection module comprises at least one floating node, and the floating node can accumulate residual charges in the process of normal working of the circuit or electrical characteristic test characterization; the floating charge discharge module is composed of a state control module and a charge discharge module, and the state control module monitors the potential state of a floating node in real time and generates a control signal; the charge discharge module responds to the control signal to conduct and discharge charges accumulated by the floating node, the floating charge discharge module comprises an MOS transistor, the MOS transistor is connected with the first port through the state control module, a source electrode of the MOS transistor is connected with the floating node, and a drain electrode of the MOS transistor is connected with the second port. According to the series high-voltage ESD protection circuit, accumulated charges on the floating node in the series high-voltage ESD protection circuit can be discharged in time.

The invention relates to a high-side power NMOS (N-channel Metal Oxide Semiconductor) gate drive circuit in synchronous rectification buck. The high-side power NMOS gate drive circuit comprises a high-voltage storage circuit, a gate charge discharge circuit, a gate voltage control capacitor C2, a level shift circuit and a logic control circuit. The high-voltage storage circuit stores an input voltage VIN on a capacitor C1 and is used for shortening the conduction delay of a high-side power tube MLD1; when the low-side power tube MLD2 is conducted, the gate charge leakage circuit MN1 realizes complete turn-off of the tube MLD1, and prevents the high-side power tube MLD1 and the low-side power tube MLD2 from being conducted at the same time; the grid voltage controls the capacitor C2 to turn on and turn off the MN1 tube under the floating potential. The logic control circuit controls the conduction of the MLD1 and the MLD2 through a first signal SWH and a second signal SWL of the PWM generator, so that the conduction delay is further shortened; the level shift circuit converts a low level into a high level based on VIN so as to prevent the MOS tube from being broken down.

The invention relates to the field of chip electrostatic protection, in particular to a high-bandwidth flash memory chip ESD protection circuit optimization method and system. The method comprises the following steps: carrying out multi-point synchronous observation through a charge imaging module, and extracting ESD multi-step observation information; identifying a high density charge region based on the ESD multi-step observation information; defining a safe charge threshold value, performing charge safety evaluation on a high-density charge region, and entering a dynamic regulation and control mode; carrying out charge discharge path dynamic planning based on a dynamic regulation and control mode, and calculating real-time residual charge density; and detecting that the real-time residual charge density is lower than a safe charge threshold value, and completing the protection operation of the local bleeder circuit. The electrostatic discharge risk events higher than the safety threshold are quickly responded and efficiently processed, the safety of the chip circuit is improved, and the service life of the chip is prolonged.

The application discloses a kind of anti-radiation reinforcement circuits of fast radiation charge, it is related to the field of semiconductor integrated circuit design.The present application is to solve the problem of large area, large power consumption of existing circuit level anti-radiation reinforcement mode, and cannot be applied in the anti-radiation reinforcement design of analog circuit.The voltage generating circuit of the present application is used to provide voltage for charge discharge circuit to trigger charge discharge circuit, so that the charge radiated to the output node of charge discharge circuit is discharged.When the positive voltage pulse of output end appears due to the positive charge pulse generated by radiation particle, the gate of positive charge discharge tube appears positive voltage pulse, the positive charge discharge tube is turned on, and the negative charge discharge tube is closed, so that the positive charge radiated to the output end is discharged;When the negative voltage pulse of output end appears due to the negative charge pulse generated by radiation particle, the gate of negative charge discharge tube appears negative voltage pulse, the negative charge discharge tube is turned on, and the positive charge discharge tube is closed, so that the negative charge radiated to the output end is discharged.

To provide a discharge state determination method that can improve the detection speed of residual vibration. [Solution] The pre-charge step includes a timing step of acquiring the elapsed time since the previous pre-charge step was performed, a charging time determination step of determining a charging time for accumulating charge in the capacitive component of the residual vibration detection circuit according to the elapsed time, and a charging step of accumulating charge in the capacitive component of the residual vibration detection circuit according to the charging time. The discharge state determination step includes a determination drive step of supplying a drive waveform signal as a drive signal to a drive element, a residual vibration acquisition step of acquiring a residual vibration detection signal output by the residual vibration detection circuit after the determination drive step, and a discharge unit determination step of determining the state of the discharge unit based on the residual vibration detection signal acquired in the residual vibration acquisition step.

The invention relates to a low-noise small-size active pixel circuit and a working method thereof, the low-noise small-size active pixel circuit comprises a charge transfer circuit, an overflow circuit and a signal readout circuit, the overflow circuit, the charge transfer circuit and the signal readout circuit are connected in sequence, the charge transfer circuit is used for completing charge-to-voltage conversion, the overflow circuit prevents saturated charge from overflowing, and the signal readout circuit is used for reading out signals. And the signal reading circuit is used for completing correlated double sampling and transmitting a signal to a next-stage circuit. According to the invention, an overflow pipe is added in an 8T circuit in the prior art, and charge overflow and adjacent pixel crosstalk under a strong light condition can be effectively inhibited by constructing a controllable charge discharge channel; a row selection transistor is omitted, signal reading is achieved through voltage control, and charging and discharging of a sampling capacitor are controlled by changing a time sequence.

To drive pixels such that driving conditions of a first charge accumulation section which first accumulates charges among a plurality of charge accumulation sections, and driving conditions of other charge accumulation sections which accumulate charges second and thereafter become closer to each other.SOLUTION: In a frame period, driving of unit accumulation periods is executed an accumulation number of times. In an adjustment phase, first driving in which charge is not discharged to a charge discharge section and the charge is not accumulated in a charge accumulation section, and second driving in which the charge is discharged through the charge discharge section, are sequentially executed. A pixel is provided with the plurality of charge accumulation sections sharing a common power supply, the first discharge section that is at least one charge discharge section not sharing the power supply with the plurality of charge accumulation sections, and the second discharge section that is at least one charge discharge section sharing the power supply with the plurality of charge accumulation sections. A distance image processing unit excludes the first discharge section from targets of the first driving and the second driving in the adjustment phase, and sets the second discharge section as a target of the first driving and the second driving in the adjustment phase.SELECTED DRAWING: Figure 1

A semiconductor device and a method of manufacturing the same are provided. A semiconductor device includes a capacitor disposed on a substrate, including a lower electrode, a dielectric layer, and an upper electrode; and a discharge structure spaced apart from the capacitor, connected to the upper electrode of the capacitor, and adapted to discharge a charge induced by a plasma process used to form the upper electrode of the capacitor to the substrate.

The utility model provides an IGBT driving circuit based on a push-pull structure, and relates to the technical field of power electronic device driving, and the IGBT driving circuit comprises an optocoupler isolation module which is used for receiving a control signal and providing electrical isolation output; the push-pull driving module comprises an NPN type triode Q1 and a PNP type triode Q2 which are complementary and symmetrical; the push-pull driving module is configured as follows: when the optocoupler is conducted, Q1 is saturated and conducted, Q2 is cut off, and a driving current charges an IGBT grid electrode through R2; when the optocoupler is turned off, the Q2 is saturated and turned on, the Q1 is turned off, and the driving current flows through the R3 to discharge the grid electrode of the IGBT. Bidirectional driving current is provided through a push-pull structure, the charge charging and discharging speed of the IGBT grid electrode is increased, the switching loss is reduced, bidirectional driving current is provided through a switch-on resistor R2 and a switch-off resistor R3, the resistance value of the switch-on resistor R2 is selected to be small, the purpose of reducing switch-on loss Eon is achieved, the resistance value of the switch-off resistor R3 is selected to be large, and the purpose of reducing switch-off Vce is achieved.

This invention discloses a gallium nitride (GaN) power device with a wide operating gate voltage. The structure includes a substrate, which, from bottom to top, comprises a substrate layer, a nucleation layer, a buffer layer, a channel layer, a barrier layer, a passivation layer, and an isolation layer. The barrier layer has a voltage-limiting region, a power region, and a discharge region. The first drain metal of the voltage-limiting region and the third gate metal of the discharge region are connected via a first interconnect metal and connected to the input gate voltage. The first source metal of the voltage-limiting region, the second gate metal of the power region, and the third drain metal of the discharge region are connected via a second interconnect metal. This invention, on the one hand, clamps the second gate metal potential of the power region using the saturation characteristics of a GaN HEMT, improving the overall gate voltage swing of the device; on the other hand, it establishes a charge discharge path for the second P-type GaN cap layer of the power region using the switching characteristics of a depletion-mode GaN PFET, enhancing the overall gate stability of the device.

A semiconductor chip includes a detection circuit configured to generate a discharge signal that is enabled when a voltage level of an external voltage is greater than a first set level and configured to generate a voltage control signal that is enabled when an output voltage is generated to have a voltage level of a ground voltage in a test mode, a charge discharge circuit configured to discharge charges of an output node that is included in a driving circuit when the discharge signal is enabled, and the driving circuit configured to generate the output voltage the voltage level of which rises up to a second set level by supplying charges from the external voltage to the output node in response to a driving signal a voltage level of which is decreased during an interval in which the voltage control signal is enabled.

A distance image pickup element is provided with a pixel circuit formed on a semiconductor substrate, the pixel circuit including at least: a photoelectric conversion element that generates electric charges corresponding to light incident from a space of a measurement object; a charge accumulation section that accumulates the electric charges; a transfer MOS transistor (hereinafter referred to as a TR) provided on a transfer path that transfers the electric charges from the photoelectric conversion element to the charge accumulation section; and a charge discharge TR provided on a discharge path that discharges the electric charges from the photoelectric conversion element. The photoelectric conversion element is formed in a shape of an N-sided polygon (N is an integer of 5 or more) on the semiconductor substrate in a plan view. The total number of the transfer TRs and the charge discharge TRs is N or more, and one transfer TR is provided on each of second sides other than a first side on which the charge discharge MOS transistor is provided among the sides of the photoelectric conversion element.

This invention relates to the field of electronic connectors and circuit protection technology, and discloses a protection method to prevent poor contact caused by metal electrolysis in spring probe connectors. The method includes a main control chip that sends a microsecond-level detection signal to the connector for monitoring. The signal pulse width is less than the electrochemical polarization establishment time threshold, and charge discharge is used to suppress the electrolytic reaction. After detecting liquid conduction, the graphene heating module is controlled to operate at a constant temperature, and the physical drying time is determined using the dynamic voltage division principle of thermal impedance. Heating is then maintained for a preset time to remove microscopic residual moisture. Finally, a cold-state insulation re-inspection is performed. After the connector naturally cools to ambient temperature, the insulation impedance is tested again, and power is restored only when the cold-state impedance meets the recovery standard. This invention avoids electrolytic corrosion caused by the monitoring process and effectively eliminates misjudgments caused by high-temperature false drying and salt moisture return, ensuring the electrical safety of the connector after recovery.

The application discloses a kind of anti-static dust removal mechanisms for liquid crystal display screen production, belong to display panel manufacturing field.The mechanism is sequentially arranged pre-charging suspension zone, standing wave excitation stripping zone and zero potential negative pressure recovery zone along the direction of conveyance.Pre-charging suspension zone utilizes detection probe to identify electrostatic polarity, and makes microdust into electrostatic suspension state by same polarity charging component emitting transient high-voltage pulse charge, and is equipped with the flexible edge grounding component of synchronous linkage to provide charge discharge loop;Standing wave excitation stripping zone utilizes high-frequency alternating air valve drive to set micro-gap air knife of face-to-face, forms spatial oscillation pressure field with preset phase difference above panel, and directly acts on suspended microdust by generated vertical acoustic streaming excitation force and strips it;Finally, by negative pressure recovery zone, microdust is recycled and potential is zeroed.The application is coupled by electrostatic body force repulsion and aerodynamic vertical excitation force in time sequence rigidity, significantly improves the removal rate of submicron microdust, effectively prevents TFT array from being punctured.

A spindle apparatus may include a cover; a rotation body within the cover to be rotatable about a central axis thereof and including a first end portion exposed to the outside and a second end portion opposite to the first end portion; a cutting tool on the first end portion of the rotation body; and an electrostatic discharge (ESD) prevention device on the second end portion of the rotation body. The ESD prevention device includes a charge discharge structure in at least partial contact with the second end portion of the rotation body to discharge charges accumulated in the cutting tool to the outside; a sensor above the charge discharge structure to detect whether the charge discharge structure is in contact with the rotation body; and a driver to move the charge discharge structure so that the charge discharge structure is in contact with the rotation body.

A battery management system comprising: at least one battery comprising two or more sets of cells, each set of cells comprising one or more cells; a multiplexing switch apparatus connected to each set of cells; and at least one controller configured to use the multiplexing switch apparatus to selectively discharge the sets of cells based on at least one criterion. A battery pack comprising: at least one battery comprising two or more sets of cells, each set of cells comprising one or more cells; and an integrated switching control system comprising at least one switch connected to each set of cells, wherein the integrated switching control system is configured to control the at least one switch to discharge the sets of cells sequentially or selectively based on at least one criterion. A battery management method or a battery pack control method.

A light detection device according to an embodiment of the present disclosure is provided with a semiconductor substrate having a first surface and a second surface opposing each other, a photoelectric conversion unit provided on the semiconductor substrate and configured to generate, through photoelectric conversion, a first charge corresponding to a received light amount, a plurality of first transistors provided on the first surface of the semiconductor substrate and constituting a read circuit for reading the first charge, a first separation groove provided on the first surface of the semiconductor substrate for separating a first active region including the photoelectric conversion unit from a second active region in which the plurality of first transistors are formed, and a charge discharge unit provided on the first surface of the semiconductor substrate and connected to the first active region.

The invention discloses a modularized IGBT (Insulated Gate Bipolar Translator) driving circuit board, which comprises a high-speed signal processing circuit, an isolating circuit, a driving circuit and a bottom board circuit, and is characterized in that the high-speed signal processing circuit, the isolating circuit and the bottom board circuit are respectively connected with the driving circuit, and the high-speed signal processing circuit, the isolating circuit and the driving circuit are integrated on a driving board; a PIN output row is installed on the lower end face of the driving board, the bottom board circuit is integrated on the bottom board, a power strip corresponding to the PIN output row is installed on the bottom board, a driving chip, a high-speed signal processing chip, an isolation transformer and a high-frequency rectifier are modularized, the on-off time is compressed to be below 10 ns by optimizing a signal transmission path, and the switching speed is remarkably improved. Meanwhile, a dynamic protection mechanism is built in the driving core, hardware latch is triggered immediately when undervoltage is detected by using a real-time voltage monitoring circuit, soft turn-off is realized through a grading discharge grid charge technology, and the damage of a voltage peak to the IGBT is effectively inhibited.

The utility model discloses an automatic early warning optical cable junction box belongs to optical cable junction box technical field, solved the optical cable junction box when using in dry windy sand environment, the box body and the wind rubs the static charge and is difficult to dissipate, and the discharge produces the EMP coupling into the in -house optical fiber patch cord, passes through the connector discharge burnout far -end or user end optical module, causes the light equipment port offline, inserts new module and is damaged again, the problem of fault concealment is difficult to trace back, causes module repeated damage, service interruption. Including box body and setting in the static discharge remote monitoring and suppression circuit in the box body, the static discharge remote monitoring and suppression circuit includes multiband electromagnetic pulse detection module, difference formula ground current monitoring module. The utility model discloses through real -time monitoring the electromagnetic pulse and ground current change around the box body, analyzes and judges static discharge event, and synchronous starting remote alarm signal transmission and initiative charge discharge mechanism, realizes the overall protection and intelligent inhibition to static harm.

The invention discloses a zero-voltage conversion Buck converter soft switching control system and method, and belongs to the technical field of power electronic high-frequency DC-DC conversion. According to the system, on the basis of a main Buck circuit, a ZVT branch composed of a resonant inductor, an auxiliary switch tube, a buffer capacitor and a voltage dividing capacitor is connected in parallel, and diodes are connected to the two ends in an anti-parallel mode so as to provide a lossless charge discharge channel; through a soft switching control module, based on a ZVT branch, the advanced opening time of an auxiliary switching tube and the turn-off time of the auxiliary switching tube are accurately calculated, the duty ratio control quantity of the auxiliary switching tube is obtained, then a control feedback loop for achieving soft switching is obtained, and all-around soft switching of opening and closing of a main switching tube and the auxiliary switching tube is achieved; the converter is more stable and efficient, and the control method is simple and easy to implement.

This invention discloses a layout structure, design method, and system-on-a-chip for a clock buffer module. The layout structure of the clock buffer module includes: a standard buffer unit; multiple functional element units, including at least one pre-embedded coupling capacitor unit and at least one pre-embedded charge discharge unit; multiple functional element units are integrated in the layout in a manner surrounding the standard buffer unit; signal pins and power pins are located on different preset high-layer metal layers, and the signal connection terminals and power connection terminals of the standard buffer unit are electrically connected to the signal pins and power pins respectively through internal connection holes. The technical solution provided by this invention improves upon the uncontrollable problems such as wiring, voltage drop, and antenna effects caused by directly using high-drive-force devices provided in the process library, while also avoiding the dependence on customized high-drive-force devices for high-speed, long-distance, low-latency applications.

The utility model relates to the technical field of driving circuits, in particular to an MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) driving circuit with a charge discharge function, which comprises a control logic circuit, an MOSFET driving unit and a charge discharge circuit. According to the utility model, the control logic circuit and the MOSFET driving unit are integrated inside the circuit, and the charge discharge circuit is also integrated inside the circuit, so that the charge of the drain electrode of the power MOSFET can be rapidly discharged through the charge discharge circuit on the chip after the P-channel MOSFET is turned off while the external P-channel power MOSFET is controlled and driven by TTL logic signals, and the power supply efficiency is improved. Therefore, the current trailing phenomenon after the radio frequency power amplifier is turned off is avoided, and the reliability of the system is improved.

The electrostatic protection structure, the silicon controlled rectifier and the semiconductor memory disclosed by the embodiments of the present disclosure comprise: a substrate; a transistor formed in the substrate, a first electrode of the transistor being connected to an electrostatic end, a second electrode of the transistor and a gate electrode of the transistor being connected to a charge discharge end; and a capacitor, a first electrode of the capacitor being connected to the substrate, and a second electrode of the capacitor being connected to the electrostatic end. The embodiments of the present disclosure can quickly turn on a parasitic BJT formed in the electrostatic protection structure, thereby discharging electrostatic discharge, playing a good electrostatic protection role, and avoiding damage to the device.

The invention discloses a low-voltage linear voltage regulator with an overshoot suppression function, which comprises a PMOS (P-channel Metal Oxide Semiconductor) tube M4a, a PMOS tube M4b, a soft start circuit, an NMOS (N-channel Metal Oxide Semiconductor) tube M1, a PMOS tube M2, a resistor R1, a resistor R2, a resistor R3, a resistor R4, an operational amplifier A1, an overshoot suppression circuit and a load capacitor CL. A soft start loop is added to optimize an internal circuit structure, and a main feedback loop is accessed after voltage is stably established in a starting process, so that the low-voltage linear voltage regulator with the overshoot suppression function is realized. Therefore, the loop competition phenomenon is avoided; a load end rapid charge discharge path is additionally arranged, an operational amplifier OUT2 node is additionally arranged, when overshoot is detected, a discharge path from an output end to GND is opened through digital logic judgment, redundant charges are rapidly released, and the path is automatically closed after output voltage recovers to a rated value.

The invention discloses a plastic waste recycling device for high-temperature-resistant material processing, which belongs to the technical field of plastic recycling and comprises a screening mechanism for separating conductor materials, phenolic resin and insulating materials in high-temperature-resistant plastic waste. The separating mechanism is provided with a separating mechanism used for separating phenolic resin which becomes soft solid, and the separating mechanism is provided with a forming mechanism used for reforming the separated phenolic resin. According to the screening mechanism, through combination of high-voltage electrostatic separation and mechanical transmission, accurate separation is achieved by means of the charge characteristic difference of conductors, insulators and phenolic resin, conductor materials are ejected and collected due to charge discharge, insulating materials are scraped and recycled due to electrostatic charge adsorption, the phenolic resin is collected in a centralized mode due to mirror image attraction, and the screening efficiency is improved. The separation efficiency and the purity are greatly improved; the full-process automation from waste material sorting, phenolic resin softening to reforming is realized, and the production efficiency is improved.

The present application belongs to the field of road engineering detection, and provides a kind of electrically conductive asphalt concrete resistivity measurement method and system based on charge discharge topology, comprising: main control unit, for driving tri-state commutation bridge, and synchronously triggering differential acquisition unit to carry out data acquisition, and calculating the resistivity of electrically conductive asphalt concrete according to acquisition data;Constant current source, for generating constant direct current to tri-state commutation bridge;The tri-state commutation bridge is arranged between the output end of constant current source and four probe components, for the switching of three kinds of working modes of forward injection mode, reverse injection mode and zero-state discharge mode.The present application utilizes tri-state commutation bridge, in positive and negative pulse switching gap, control bridge enters zero-state discharge mode, constructs the low impedance short circuit loop of probe against ground, and quickly releases the interface polarization charge in asphalt material, which physically eliminates the interference of residual charge on reverse measurement.

This invention discloses a slope detection circuit, relating to the field of integrated circuit technology. The circuit includes: a signal detection circuit, a comparison feedback circuit, and a charge discharge circuit. The output terminal of the signal detection circuit is connected to the inverting input terminal of the comparison feedback circuit, and the output terminal of the comparison feedback circuit is connected to the control terminal of the charge discharge circuit and an external bus chip. The signal detection circuit is used to convert the slope of the input signal into a voltage change at the detection node, generating a voltage change signal. The comparison feedback circuit is used to receive the voltage change signal and, based on the voltage change signal, generate a rising edge detection signal or a falling edge detection signal. The charge discharge circuit is used to discharge the charge accumulated at the detection node in response to the rising edge detection signal or the falling edge detection signal.

This invention discloses a gate voltage bootstrap sampling switch circuit, PCB board, and controller, including a clock inverting unit, a bootstrap charging / discharging unit, a sampling switch unit, and an isolation unit. The input terminal of the clock inverting unit is connected to an external clock signal terminal. The output terminal of the clock inverting unit is connected to the enable terminals of the bootstrap charging / discharging unit and the isolation unit. The input terminal of the bootstrap charging / discharging unit is connected to an external power supply terminal VDD, and its output terminal is connected to the enable terminal of the sampling switch unit. The input terminal of the sampling switch unit is connected to an external input signal terminal, and its output terminal is connected to the sampling signal output terminal. The output terminal of the isolation unit is connected to the sampling switch unit. The bootstrap charging / discharging unit and the sampling switch unit achieve a constant gate-source voltage, reducing the dependence of the sampling switch's on-resistance on the input signal. The isolation unit ensures effective shutdown of the signal path during non-sampling phases and utilizes charge discharge to reduce charge injection and clock feedthrough effects generated during the switching on and off of the sampling switch.

The utility model provides a quantitative charge and discharge system for pollutant particles, which relates to the technical field of environmental research equipment and is characterized in that a power supply device is respectively connected with a particle charge charging device and a particle charge discharging device and is used for power supply and charge and discharge conversion; a Hall element of the particle charge charging device is arranged between two magnetic coils, and the front surface and the rear surface of the Hall element are connected with the two magnetic coils respectively so that current can be generated in the Hall element. The upper surface and the lower surface of the Hall element are respectively connected with the positive and negative charge insulating plates and are used for charging pollutant particles on the positive charge insulating plate and the negative charge insulating plate; the particle charge discharging device is used for discharging pollutant particles on the positive charge insulating plate and the negative charge insulating plate; the charge measuring device is connected with pollutant particles on the positive charge insulating plate and the negative charge insulating plate and used for monitoring the charge quantity of the particles. According to the scheme, quantitative energy charging of pollutant particles can be achieved, and therefore the accuracy of pollutant particle experimental research is improved.

The application relates to an electrostatic discharge mechanism and a medical device. The electrostatic discharge mechanism is arranged in a cavity of a grounding mechanism. The electrostatic discharge mechanism comprises a first mounting piece, a first insulating piece and a second mounting piece. The first mounting piece is provided with a first mounting hole. The first insulating piece is connected with the first mounting piece. The second mounting piece is provided with a second mounting hole. The second mounting hole and the first mounting hole are concentrically arranged. The edges of the first insulating piece and the second mounting piece form a discharge cavity through the cavity wall of the cavity. The discharge cavity is arranged in the cavity. The first mounting piece and the second mounting piece are made of conductive material. The electrostatic discharge mechanism provided by the application does not need to be provided with a safety capacitor for discharge. Charge discharge can be realized through a mechanical structure. There is no direct contact between the first mounting piece and the second mounting piece and between the first mounting piece and the grounding mechanism. Charge transmission can be realized through the discharge cavity. Meanwhile, the safety requirements and the electromagnetic compatibility requirements in the medical device are met.