2314 results about "Carbon film" patented technology

A method of forming a transparent hydrocarbon-based polymer film on a substrate by plasma CVD includes: introducing a main gas consisting of a hydrocarbon gas (CαHβ, wherein α and β are natural numbers) and an inert gas at a flow ratio (R) of CαHβ / inert gas of 0.25 or less into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-based polymer film on the substrate by plasma polymerization of the gas at a processing temperature (T) wherein T≦(−800R+500).

Reactive halogen-ion plasmas, having for example, generating chloride ions, generated from low-pressure halogen gases using a radio-frequency plasma are employed for producing low-friction carbon coatings, such as a pure carbon film, at or near room temperature on a bulk or thin film of a compound, such as titanium carbide.

Methods of forming carbon films, structures and devices including the carbon films, and systems for forming the carbon films are disclosed. A method includes depositing a metal carbide film using atomic layer deposition (ALD). Metal from the metal carbide film is removed from the metal carbide film to form a carbon film. Because the films are formed using ALD, the films can be relatively conformal and can have relatively uniform thickness over the surface of a substrate.

Provided is a process for preparing graphene on a SiC substrate, based on metal film-assisted annealing, comprising the following steps: subjecting a SiC substrate to a standard cleaning process; placing the cleaned SiC substrate into a quartz tube and heating the quartz tube up to a temperature of 750 to 1150° C.; introducing CCl4vapor into the quartz tube to react with SiC for a period of 20 to 100 minutes so as to generate a double-layered carbon film, wherein the CCl4 vapor is carried by Ar gas; forming a metal film with a thickness of 350 to 600 nm on a Si substrate by electron beam deposition; placing the obtained double-layered carbon film sample onto the metal film; subsequently annealing them in an Ar atmosphere at a temperature of 900 to 1100° C. for 10-30 minutes so as to reconstitute the double-layered carbon film into double-layered graphene; and removing the metal film from the double-layered graphene, thereby obtaining double-layered graphene. Also provided is double-layered graphene prepared by said process.

Embodiments of the present invention generally relate to methods for forming a flowable carbon-containing film on a substrate. In one embodiment, an oxygen-containing gas is flowed into a remote plasma region to produce oxygen-containing plasma effluents, and a carbon-containing gas is combined with the oxygen-containing plasma effluents in a substrate processing region which contains the substrate. A carbon-containing film is formed in trenches which are formed on the substrate and a low K dielectric material is deposited on the carbon-containing film in the trenches. The carbon-containing film is decomposed by an UV treatment and airgaps are formed in the trenches under the low K dielectric material.

Embodiments described herein relate to methods for forming patterns of semiconductor devices utilizing parylene gapfill layers deposited using a thermal chemical vapor deposition (CVD) process. In one embodiment the patterns of semiconductor devices are formed by forming amorphous carbon (a-C) mandrels on first layers, depositing amorphous silicon (a-Si) layers over the a-C mandrels and the first layers, etching the a-Si spacer layers to expose top surfaces of the a-C mandrels and to expose the first layers, depositing parylene gapfill layers using the CVD process, removing portions of the parylene gapfill layers until the top surfaces are exposed; and removing the a-Si spacer layers to expose the first layers and form patterns of semiconductor devices having a-C mandrels and parylene mandrels.

A microwave is radiated into a processing chamber (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C5F8 gas supplied into the processing chamber (1) from a gas supply member (3) is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the C5F8 gas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.

A light emitting device comprises a plurality of LED chips (“lateral” or “vertical” conducting) operable to generate light of a first wavelength range and a package for housing the chips. The package comprises: a thermally conducting substrate (copper) on which the LED chips are mounted and a cover having a plurality of through-holes in which each hole corresponds to a respective one of the LED chips. The holes are configured such that when the cover is mounted to the substrate each hole in conjunction with the substrate defines a recess in which a respective chip is housed. Each recess is at least partially filled with a mixture of at least one phosphor material and a transparent material. In a device with “lateral” conducting LED chips a PCB is mounted on the substrate and includes a plurality of through-holes which are configured such that each chip is directly mounted to the substrate. For a device with “vertical” conducting LED chips the LED chips are mounted on a diamond like carbon film.

An anode for use in a non-aqueous-electrolyte secondary battery includes an active material film for occluding and releasing lithium ions, and an amorphous carbon film or a diamond-like carbon film covering the active material film for suppressing growth of dendrite and degradation of the anode, thereby achieving improved cycle lifetime of the secondary battery.

The invention relates to a general conductive carbon film based on Graphene and a preparation method. The method for preparing the carbon film mainly comprises the following steps: (1) preparing water-soluble single-layer or multi-layer grapheme; (2) preparing organic soluble single-layer or multi-layer Graphene; (3) shaping the solution (or dispersion liquid) containing the Graphene in 1 or 2 by methods of spin coating, spraying, soaking or casting and the like to prepare a film based on the single-layer or multi-layer Graphene; and (4) chemically reducing or roasting the film obtained in 3 to prepare the carbon film based on the single-layer or multi-layer Graphene. The method can be used for preparing the carbon film on various matrixes such as steel, glass, ceramics, quartz, carbon materials, organic substances and the like.

The invention relates to a preparation method of metal mono-atoms and belongs to the technical field of materials science and engineering. The metal mono-atoms prepared through the method may include: Pt, Ag, Au, Pd, Rh, Ir, Ru, Co, Ni and Cu, and metal mono-atoms supported on TiO2, zinc oxide, cerium oxide, aluminum oxide, silicon oxide, ferric oxide, manganese oxide, C3N4, mesoporous carbon, ultrathin carbon films, graphene, carbon nano tubes or molecular sieve materials, etc. The method includes the steps of: preparing a precursor solution in a certain concentration, and freezing the solution; and under an ice phase, processing ice cubes by means of external field or reaction between reactants in the ice cubes, and when the ice cubes are molten, a mono-atom solution is finally produced; mixing the mono-atom solution with different materials, performing ultrasonic treatment, filtration, cleaning and drying to finally obtain the mono-atoms supported on various materials. The preparation method is quick, has high product density, allows mass production, is high in efficiency and has wide application range, and compared with a co-precipitation method and an impregnation method, the method has significant advantages.

The present invention relates to a method of protecting a microelectronic device during device packaging, including the steps of applying a water-insoluble, temporary protective coating to a sensitive area on the device; performing at least one packaging step; and then substantially removing the protective coating, preferably by dry plasma etching. The sensitive area can include a released MEMS element. The microelectronic device can be disposed on a wafer. The protective coating can be a vacuum vapor-deposited parylene polymer, silicon nitride, metal (e.g. aluminum or tungsten), a vapor deposited organic material, cynoacrylate, a carbon film, a self-assembled monolayered material, perfluoropolyether, hexamethyldisilazane, or perfluorodecanoic carboxylic acid, silicon dioxide, silicate glass, or combinations thereof. The present invention also relates to a method of packaging a microelectronic device, including: providing a microelectronic device having a sensitive area; applying a water-insoluble, protective coating to the sensitive area; providing a package; attaching the device to the package; electrically interconnecting the device to the package; and substantially removing the protective coating from the sensitive area.

A stent includes a tubular stent body 11, a diamond-like carbon film 12 formed on the surface of the stent body 11 and having an activated surface, and a polymer layer 13 immobilized on the surface of the diamond-like carbon film. The polymer layer 13 contains a drug 14 having an effect to prevent restenosis, and the drug 14 is gradually released from the polymer layer 13.

An evaluation method that can easily evaluate properties of a carbon protective film and a lubricant on a magnetic-disk surface or particularly, an evaluation method of a magnetic disk in which the properties of the magnetic-disk surface can be evaluated accurately so that a strict demand for interactions between the magnetic-disk surface and a head can be met is provided. In a state in which an element portion of the magnetic head provided with the head element portion that projects by thermal expansion is projected, after being brought into contact with a predetermined radial position on the surface of the rotating magnetic disk, the head is further made to perform seeking in a state in which the element portion is projected by a specified amount, whereby the properties of the carbon film or the lubricant formed on the magnetic-disk surface is evaluated.

A cold cathode field emission device comprising (a) a cathode electrode formed on a supporting substrate, and (b) a gate electrode which is formed above the cathode electrode and has an opening portion, and further comprising (c) an electron emitting portion composed of a carbon film formed on a surface of a portion of the cathode electrode which portion is positioned in a bottom portion of the opening portion.

A piston ring is formed over the entire surface with a gas nitrided layer. A diamond-like carbon film is formed in a thickness of 0.5 to 30 micrometers over the gas nitrided layer at the upper and lower surfaces. The diamond-like carbon film has a surface structure in which diamond-like carbon has been deposited in nodular shapes in sizes of 0.5 to 5 micrometers. The diamond-like carbon is configured with any one of an amorphous carbon structure, an amorphous carbon structure having partly a diamond structure, or an amorphous carbon structure having partly a graphite structure.

A magnetic recording medium which allows high density recording and has excellent durability can be obtained. A magnetic recording medium includes: a plurality of ferromagnetic material dots arranged on a soft magnetic layer formed on a non-magnetic substrate so as to be separated from one another; and carbon films which are formed on the respective ferromagnetic material dots, each carbon film having a smooth film face shape in a section passing through the center of each ferromagnetic material dot and a film thickness gradually decreasing from the center of the ferromagnetic material dot toward an outer edge thereof.

The present invention relates to a doped multi-layer core-shell silicon-based composite material for a lithium ion battery, and a preparation method thereof. Other than being doped with a necessary lithium element, the material is also doped with at least a non-metallic element and a metal element; the material has a structure in which a silicon oxide particle doped with elements is taken as a core, and a multilayer composite film which is tightly coated on the surface of the core particle is taken as a shell; the core particle contains uniformly dispersed monoplasmatic silicon nanoparticles,the content of doping elements gradually decreases from the outside to the inside without a clear interface, and a dense lithium silicate compound is formed on the surface of the core particle by embedding and doping the lithium element; and the multilayer composite film is a carbon film layer and a doped composite film layer composed of the carbon film layer and other elemental components. The doped multi-layer core-shell silicon-based composite material provided by the present invention has a high capacity, good rate performance, high coulombic efficiency, good cycle performance, a low expansion rate, and other electrochemical characteristics when the material is used for the negative electrode of lithium ion battery.

The invention discloses a high-thermal conductivity graphite alkenyl polymer heat conducting film as well as a preparation method and usage thereof. The preparation method comprises the following steps: uniformly mixing graphite alkenyl micro-flakes with macromolecular polymers in various proportions; then making the mixture into a film and further carbonizing and graphitizing the film to obtain the high-thermal conductivity graphite alkenyl polymer heat conducting film. According to the invention, graphite alkenyl materials are used as reinforcing material and additive material to reduce usage amount of macromolecular polymers and to cut down operation cost and environment pollution. Furthermore, defects of macromolecular polymers arising from the carbonizing process are reduced and graphitizing degrees of the macromolecular polymers are raised to greatly improve quality of the heating conducting carbon film, so as to enable the film to be thinner and higher in heat conducting performance.

A sliding structure for an automotive engine includes a sliding member with a sliding portion and a lubricant applied to the sliding portion so that the sliding portion can make sliding contact with a counterpart member via the lubricant. The sliding member is either of a piston ring, a piston pin, a cam lobe, a cam journal, a plain bearing, a rotary vane and a timing chain. The sliding portion has a base made of a steel or aluminum material and a hard carbon film formed on the base to coat the sliding portion. The hard carbon film has a thickness of 0.3 to 2.0 mum, a Knoop hardness of 1500 to 4500 kg / mm2, a surface roughness Ry (mum) satisfying the following equation: Ry<{(0.75-Hk / 8000)xh+0.07 / 0.8}, where h is the thickness (mum) of the film; and Hk is the Knoop hardness (kg / mm2) of the film.

The present invention is directed generally to templates used in the creation of thin-film replicas, for example, the creation of thin films, such as carbon films, for use as specimen support in electron-beam specimen analysis. More specifically, the present invention is directed to novel reusable patterned templates, the methodology of making these reusable templates, the templates made from such methodologies, the use and reuse of these templates to make thin films of any type for any purpose, and the thin films made from these templates. A feature of the novel template of the present invention is in its employment of one or more zones of discontinuity, or undercuts, associated with the patterns transferred into the template to allow for the removal of the thin film from the template without sacrificing the structural integrity of the template to prevent at least one re-use of the template.

An Si—O containing hydrogenated carbon film as an optical film has a refractive index in a range from at least 1.48 to at most 1.85 for light of 520 nm wavelength and an extinction coefficient of less than 0.15 for light of 248 nm wavelength, wherein the refractive index and the extinction coefficient are decreased with energy beam irradiation. By utilizing such an Si—O containing hydrogenated carbon film, it is possible to provide various types of optical elements and an optical device including the same.

A method for manufacturing an electron source includes the steps of covering a substrate provided with a first electrode and a second electrode by a container, introducing a gas composed of a carbon compound into the container, and forming a carbon film by applying a voltage between the first electrode and the second electrode. The relationship 1 / (4 / Cx-1 / Cz)>=Sout>=4Sact-Cin is satisfied, where Cin is the conductance from the gas inlet to the position of the substrate nearest to the gas inlet, Cx is the conductance from the position of the substrate nearest to the gas inlet to the position of the substrate nearest to the gas outlet, Sout is the effective exhaust rate, Sact is the consumption rate of the gas, and Cz is the conductance from the substrate to the gas outlet. An apparatus for manufacturing an electron source and a method for manufacturing an image-forming apparatus are also disclosed.

In a touchpad with single-layered PCB structure, a PCB has a bottom layer with a sensor area and a component area thereon, the sensor area includes two directional traces directly connected to the component area, respectively, and carbon film wires in the sensor area for interconnecting one or more of the directional traces.

Ion implantation is carried out to form a p-well region and a source region in parts of a high resistance SiC layer on a SiC substrate, and a carbon film is deposited over the substrate. With the carbon film deposited over the substrate, annealing for activating the implanted dopant ions is performed, and then the carbon film is removed. Thus, a smooth surface having hardly any surface roughness caused by the annealing is obtained. Furthermore, if a channel layer is epitaxially grown, the surface roughness of the channel layer is smaller than that of the underlying layer. Since the channel layer having a smooth surface is provided, it is possible to obtain a MISFET with a high current drive capability.

Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF3 to remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.