2276 results about "Carbon film" patented technology

Reactive halogen-ion plasmas, having for example, generating chloride ions, generated from low-pressure halogen gases using a radio-frequency plasma are employed for producing low-friction carbon coatings, such as a pure carbon film, at or near room temperature on a bulk or thin film of a compound, such as titanium carbide.

Provided is a process for preparing graphene on a SiC substrate, based on metal film-assisted annealing, comprising the following steps: subjecting a SiC substrate to a standard cleaning process; placing the cleaned SiC substrate into a quartz tube and heating the quartz tube up to a temperature of 750 to 1150° C.; introducing CCl₄vapor into the quartz tube to react with SiC for a period of 20 to 100 minutes so as to generate a double-layered carbon film, wherein the CCl₄ vapor is carried by Ar gas; forming a metal film with a thickness of 350 to 600 nm on a Si substrate by electron beam deposition; placing the obtained double-layered carbon film sample onto the metal film; subsequently annealing them in an Ar atmosphere at a temperature of 900 to 1100° C. for 10-30 minutes so as to reconstitute the double-layered carbon film into double-layered graphene; and removing the metal film from the double-layered graphene, thereby obtaining double-layered graphene. Also provided is double-layered graphene prepared by said process.

Embodiments described herein relate to methods for forming patterns of semiconductor devices utilizing parylene gapfill layers deposited using a thermal chemical vapor deposition (CVD) process. In one embodiment the patterns of semiconductor devices are formed by forming amorphous carbon (a-C) mandrels on first layers, depositing amorphous silicon (a-Si) layers over the a-C mandrels and the first layers, etching the a-Si spacer layers to expose top surfaces of the a-C mandrels and to expose the first layers, depositing parylene gapfill layers using the CVD process, removing portions of the parylene gapfill layers until the top surfaces are exposed; and removing the a-Si spacer layers to expose the first layers and form patterns of semiconductor devices having a-C mandrels and parylene mandrels.

A method for reforming an amorphous carbon film as part of a deposition process thereof, includes process of: (i) depositing an amorphous carbon film on a substrate in a reaction space until a thickness of the amorphous carbon film reaches a predetermined thickness, and then stopping the deposition process; and (ii) exposing the amorphous carbon film to an Ar and/or He plasma in an atmosphere substantially devoid of hydrogen, oxygen, and nitrogen.

A piston ring has a diamond-like carbon film formed in a thickness of 0.5 to 30 micrometers over an under film on the upper and lower surfaces. The under film is directly formed on the surfaces, or formed on a hard surface treatment layer consisting of a gas nitrided layer or a chromium plating film. The diamond-like carbon is configured with any one of an amorphous carbon structure, an amorphous carbon structure having partly a diamond structure, or an amorphous carbon structure having partly a graphite structure. The under film is comprised of one or more elements selected from the group consisting of silicon, titanium, tungsten, chromium, molybdenum, niobium and vanadium in an atomic content of 70 percent or more and below 100 percent, and the remaining content consisting of carbon, or one or more of said elements in an atomic content of 100 percent. The films may also be formed in the same way on the outer circumferential surface of the piston ring.

A microwave is radiated into a processing chamber (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C₅F₈ gas supplied into the processing chamber (1) from a gas supply member (3) is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the C₅F₈ gas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.

A light emitting device comprises a plurality of LED chips (“lateral” or “vertical” conducting) operable to generate light of a first wavelength range and a package for housing the chips. The package comprises: a thermally conducting substrate (copper) on which the LED chips are mounted and a cover having a plurality of through-holes in which each hole corresponds to a respective one of the LED chips. The holes are configured such that when the cover is mounted to the substrate each hole in conjunction with the substrate defines a recess in which a respective chip is housed. Each recess is at least partially filled with a mixture of at least one phosphor material and a transparent material. In a device with “lateral” conducting LED chips a PCB is mounted on the substrate and includes a plurality of through-holes which are configured such that each chip is directly mounted to the substrate. For a device with “vertical” conducting LED chips the LED chips are mounted on a diamond like carbon film.

Disclosed is a negative active material for a rechargeable lithium battery that includes graphite particles, silicon micro-particles attached on the graphite particles and a carbon film partially or totally coated on the graphite particles.

An anode for use in a non-aqueous-electrolyte secondary battery includes an active material film for occluding and releasing lithium ions, and an amorphous carbon film or a diamond-like carbon film covering the active material film for suppressing growth of dendrite and degradation of the anode, thereby achieving improved cycle lifetime of the secondary battery.

The invention relates to a preparation method of metal mono-atoms and belongs to the technical field of materials science and engineering. The metal mono-atoms prepared through the method may include: Pt, Ag, Au, Pd, Rh, Ir, Ru, Co, Ni and Cu, and metal mono-atoms supported on TiO2, zinc oxide, cerium oxide, aluminum oxide, silicon oxide, ferric oxide, manganese oxide, C3N4, mesoporous carbon, ultrathin carbon films, graphene, carbon nano tubes or molecular sieve materials, etc. The method includes the steps of: preparing a precursor solution in a certain concentration, and freezing the solution; and under an ice phase, processing ice cubes by means of external field or reaction between reactants in the ice cubes, and when the ice cubes are molten, a mono-atom solution is finally produced; mixing the mono-atom solution with different materials, performing ultrasonic treatment, filtration, cleaning and drying to finally obtain the mono-atoms supported on various materials. The preparation method is quick, has high product density, allows mass production, is high in efficiency and has wide application range, and compared with a co-precipitation method and an impregnation method, the method has significant advantages.

An evaluation method that can easily evaluate properties of a carbon protective film and a lubricant on a magnetic-disk surface or particularly, an evaluation method of a magnetic disk in which the properties of the magnetic-disk surface can be evaluated accurately so that a strict demand for interactions between the magnetic-disk surface and a head can be met is provided. In a state in which an element portion of the magnetic head provided with the head element portion that projects by thermal expansion is projected, after being brought into contact with a predetermined radial position on the surface of the rotating magnetic disk, the head is further made to perform seeking in a state in which the element portion is projected by a specified amount, whereby the properties of the carbon film or the lubricant formed on the magnetic-disk surface is evaluated.

A cold cathode field emission device comprising (a) a cathode electrode formed on a supporting substrate, and (b) a gate electrode which is formed above the cathode electrode and has an opening portion, and further comprising (c) an electron emitting portion composed of a carbon film formed on a surface of a portion of the cathode electrode which portion is positioned in a bottom portion of the opening portion.

The invention discloses a high-thermal conductivity graphite alkenyl polymer heat conducting film as well as a preparation method and usage thereof. The preparation method comprises the following steps: uniformly mixing graphite alkenyl micro-flakes with macromolecular polymers in various proportions; then making the mixture into a film and further carbonizing and graphitizing the film to obtain the high-thermal conductivity graphite alkenyl polymer heat conducting film. According to the invention, graphite alkenyl materials are used as reinforcing material and additive material to reduce usage amount of macromolecular polymers and to cut down operation cost and environment pollution. Furthermore, defects of macromolecular polymers arising from the carbonizing process are reduced and graphitizing degrees of the macromolecular polymers are raised to greatly improve quality of the heating conducting carbon film, so as to enable the film to be thinner and higher in heat conducting performance.

The present invention is directed generally to templates used in the creation of thin-film replicas, for example, the creation of thin films, such as carbon films, for use as specimen support in electron-beam specimen analysis. More specifically, the present invention is directed to novel reusable patterned templates, the methodology of making these reusable templates, the templates made from such methodologies, the use and reuse of these templates to make thin films of any type for any purpose, and the thin films made from these templates. A feature of the novel template of the present invention is in its employment of one or more zones of discontinuity, or undercuts, associated with the patterns transferred into the template to allow for the removal of the thin film from the template without sacrificing the structural integrity of the template to prevent at least one re-use of the template.

An Si—O containing hydrogenated carbon film as an optical film has a refractive index in a range from at least 1.48 to at most 1.85 for light of 520 nm wavelength and an extinction coefficient of less than 0.15 for light of 248 nm wavelength, wherein the refractive index and the extinction coefficient are decreased with energy beam irradiation. By utilizing such an Si—O containing hydrogenated carbon film, it is possible to provide various types of optical elements and an optical device including the same.

Ion implantation is carried out to form a p-well region and a source region in parts of a high resistance SiC layer on a SiC substrate, and a carbon film is deposited over the substrate. With the carbon film deposited over the substrate, annealing for activating the implanted dopant ions is performed, and then the carbon film is removed. Thus, a smooth surface having hardly any surface roughness caused by the annealing is obtained. Furthermore, if a channel layer is epitaxially grown, the surface roughness of the channel layer is smaller than that of the underlying layer. Since the channel layer having a smooth surface is provided, it is possible to obtain a MISFET with a high current drive capability.

Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF₃ to remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.