174 results about "Uv treatment" patented technology

Skin disorders such as, for example, atopic dermatitis, dyshidrosis, eczema, lichen planus, psoriasis, and vitiligo, are treated by applying high doses of ultraviolet light to diseased regions of a patients skin. The dosage employed exceeds 1 MED, an MED being determined for the particular patient being treated, and may range from about 1 MED to about 20 MED or higher. The ultraviolet light has a wavelength within the range of between about 295 nanometers to about 320 nanometers and preferably is between about 300 nanometers and about 310 nanometers. High doses of ultraviolet light are preferably restricted to diseased tissue areas so as to avoid risk of detrimental side affects in healthy skin, which is more susceptible to damage from UV light. Cooling the skin prior to and/or while exposing the skin to the UV light can be used to reduce tissue damage resulting from exposure to the UV light. Higher doses of UV light can therefore be employed without injurious affects. A specialized handpiece provides a beam profile especially suitable for application of controlled doses. A specialized delivery device is useful for UV treatment of tissue within the mouth.

A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric and associated apparatus enables process induced damage repair. The methods of the invention are particularly applicable in the context of damascene processing to recover lost low-k property of a dielectric damaged during processing, either pre-metallization, post-planarization, or both. UV treatments can include an exposure of the subject low-k dielectric to a constrained UV spectral profile and/or chemical silylating agent, or both.

A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric enables process-induced damage repair. The method is particularly applicable in the context of damascene processing. A method provides for forming a semiconductor device by depositing a carbon-containing low-k dielectric layer on a substrate and forming a trench in the low-k dielectric layer, the trench having sidewalls ending at a bottom. The trench is then exposed to UV radiation and, optionally a gas phase source of —CH₃ groups, to repair damage to the carbon-containing low-k material of the trench sidewalls and bottom caused by the trench formation process (generally etching, ashing, and wet or dry cleaning). A similar treatment, with or without the gas phase source of —CH₃ groups, may be applied to repair damage caused in a subsequent planarization operation.

A method of fabricating a semiconductor device is provided. First, a semiconductor substrate and a dielectric layer positioned on the semiconductor substrate are prepared. Subsequently, the dielectric layer is etched to form a hole structure in the dielectric layer. Afterward, a degas process is performed. An ultraviolet (UV) treatment is carried out to the semiconductor substrate in the degas process so as to expel at least a gas contained in the dielectric layer. Next, a barrier layer is formed on the sidewall and on the bottom of the hole structure. Furthermore, the hole structure is filled with a conductive material. Since the UV treatment can degas the dielectric layer efficiently, the formed semiconductor device can have a fine and stable structure.

The present invention provides a method of forming a semiconductor structure having an ultra low-K dielectric material that adheres well to the substrate. The method includes depositing a low-K material on the top surface of a substrate at a low temperature of no more than 250° by a CVD or spin-on process. The dielectric material is then cured by placing the substrate with the dielectric film in an environment where the temperature is regulated at about 400° or less as the dielectric film is being subjected to a plasma treatment or an E-beam treatment or UV treatment. The environment may further include one or more gases or a mixture of gases selected from the group consisting of H₂, N₂, NH₃, CO₂, all hydride gases and a mixture of these gases.

A disinfectant treatment for self-contained potable water systems. A lamp or lamps within the interior of at least one component system in which water is resident. During operation of the system. As the water tank, water heater, water filter, or other component which holds a volume of water. By putting a radioactive and a microbial effect in response to exposure to UV radiation may be formed of the vessel or other component. The radioactive material may be tin dioxide, titanium dioxide, or other material that produces hydroxyl ions in response to UV exposure. The hydroxyl ions flow from the vessel or other component into the piping and other components so as to attack/inhibit microbial action throughout the system. The lamps are mounted within quartz sleeves for immersion in water or other components. The quartz sleeves to prevent vibration damage. May also be used to of the system so as to prevent friction freeze damage.

A water treatment tank for use with water purification apparatus including an ultra-violet lamp within an encapsulating sleeve onto which incoming water is directed to provide a thin laminar flow about the bulb. The lower compartment has cooling coils about the walls for cooling the water therein relative to the water in the upper compartment. A surrounding sleeve may be located intermediate the encapsulating sleeve and an outer vessel in the tank. A leak detector is located in the encapsulating sleeve. The leak detector and outer vessel are believed to provide safety to users in the event of internal breakage in the tank. A reflective surface is also utilized to direct UV light into portions of the faucets formerly obscured from UV treatment. The faucets preferably provide self-sanitizing capability and an information center selectively displays time until next service, cost savings over bottled water and information related to the dispenser.

A method of manufacturing a semiconductor device having a damascene structure contains a process of forming a first interlayer insulating film (6) and a second interlayer insulating film (4) formed of a low dielectric-constant film on a substrate, forming via holes (9) by using a first resist pattern (1a) formed on the second interlayer insulating film, conducting an organic peeling treatment using organic peeling liquid containing amine components and then forming a second resist pattern (1b) on the second interlayer insulating film. After the wet treatment, before a second antireflection coating (2b) is coated so as to be located below the second resist pattern is coated, at least one of an annealing treatment, a plasma treatment, a UV treatment and an organic solvent treatment is carried out to remove amine components which inhibit the catalysis reaction of acid occurring in the resist at the light exposure, thereby preventing degradation of the resolution of the second resist pattern (1b).

A method of manufacturing an optical film by a solution casting method, in which a poor peeling region of a metal support can be eliminated by casting a dope on the surface of the metal support after a surface treatment film is formed on the surface of the metal support by atmospheric pressure plasma treatment or excimer UV treatment. Consequently, limitation on the conditions of film production is reduced and productivity is enhanced. Furthermore, since peeling of the film is enhanced, lateral variation in peeling position is reduced and variation in retardation value is reduced sharply, and thereby an optical film having optical characteristics excellent in transparency and flatness can be manufactured. Consequently, a method for manufacturing an optical film, an optical film, a polarizing plate and a display device which meet the demands of a high quality thin and wide protective film for polarizing plate can be provided.

An water providing apparatus includes a input portion for receiving untreated water, a treatment portion for treating and outputting treated water having a UV treatment module for reducing pathogens, a filtering mechanism for reducing physical and chemical impurities, a UV analysis module for determining levels of the impurities in the untreated water and for determining levels of impurities in the treated water, a processing unit for determining whether the levels of impurities in the treated water exceed a threshold, a reporting module for outputting the levels of the impurities in the untreated and treated water to a remote monitoring service, and a water output portion for providing the treated water if safe, and for inhibiting output of the treated water if unsafe.

The present disclosure provides for light delivery assemblies and, more particularly to light delivery assemblies/systems that provide light to and/or illuminate/treat predetermined locations (e.g., surgical sites), and related methods of use. An exemplary light delivery assembly (e.g., a surgical site light) includes a shell/housing (e.g., a plastic shell/housing) with a cross-sectional shape similar to an inward-facing asymmetrical C. The shell/housing is shaped to be placed proximal to a site (e.g., surgical site) and emit light onto the site from a plurality of directions while inhibiting the light from radiating away from the outside of the shell/housing. Exemplary light delivery assemblies of the present disclosure can be utilized for a variety of different applications/treatments/uses (e.g., surgical applications, disinfection/sterilization especially UV in the UVC wavelength range, other UV treatment, infrared heating and treatment, therapy, IR light delivery, use of all/other wavelengths of light, etc.).

A device and method is proposed to enable the treatment of interior of bodily hollow organs and other interior cavities of a body for a number of harmful virus, fungal, and bacterial entities and autoimmune conditions by internal short wavelength ultraviolet light by use of specially equipped endoscope-like devices.

In order to improve the air quality in bounded spaces such as a room, an air treatment device and an air treatment method are disclosed. The air treatment device comprises a fan (16) for stimulating airflow through the air treatment device and an UV treatment chamber (20). An UV radiation source (11) radiates UV radiation in the UV treatment chamber to kill microorganisms in said airflow. The air treatment device is designed such that a high airflow may be generated, while all microorganisms present in the air flowing through the air treatment device are killed. With the high airflow and air cleaning capacity, the air treatment device may clean a bounded space in a short period of time.