54 results about "Lateral variation" patented technology

An optical device includes a plurality of metallic stripes, arranged in a substantially planar, subwavelength grating having a laterally varying, continuous grating vector, deposited on a substrate such as GaAs or ZnSe. When used as a polarizer, the device passes a laterally uniform polarized beam of electromagnetic radiation incident thereon with a predetermined, laterally varying transmissivity. When used to effect polarization state transformation, the device transforms a beam of electromagnetic radiation incident thereon into a transmitted beam having a predetermined, laterally varying polarization state. The device can be used to provide radially polarized electromagnetic radiation for accelerating subatomic particles or for cutting a workpiece. The device also can be used, in conjunction with a mechanism for measuring the lateral variation of the intensity of the transmitted beam, for measuring the polarization state of the incident beam.

A method of manufacturing an optical film by a solution casting method, in which a poor peeling region of a metal support can be eliminated by casting a dope on the surface of the metal support after a surface treatment film is formed on the surface of the metal support by atmospheric pressure plasma treatment or excimer UV treatment. Consequently, limitation on the conditions of film production is reduced and productivity is enhanced. Furthermore, since peeling of the film is enhanced, lateral variation in peeling position is reduced and variation in retardation value is reduced sharply, and thereby an optical film having optical characteristics excellent in transparency and flatness can be manufactured. Consequently, a method for manufacturing an optical film, an optical film, a polarizing plate and a display device which meet the demands of a high quality thin and wide protective film for polarizing plate can be provided.

The invention discloses a calculating method and system of a well-to-seismic integration average speed field. The method comprises the steps of: utilizing a well logging facies type of a target layer and a seismic facies type of the target layer to dividing a sedimentary facies of the target layer, encoding the sedimentary facies, and obtaining a sedimentary facies code; utilizing an earthquake to superpose speed fields, and by utilizing a Dix formula to calculate an earthquake average speed; utilizing well logging data to calculate a well logging average speed at each well drilling position of the target layer; and using the sedimentary facies code as a bound term, using the earthquake average speed as a secondary variable, using the well logging average speed as a main variable, utilizing a Co-Kriging estimating algorithm to carry out Co-Kriging interpolation, and obtaining a well-to-seismic integration average speed field. According to the invention, the high-precision well-to-seismic integration average speed field calculating method under the sedimentary facies constraint is utilized, and the consistence between a speed field transverse change trend and practical geological characteristics is ensured, so that the time-depth conversion precision of a structural map is improved.

Methods of depositing materials to provide for efficient coupling of light from a first device to a second device are disclosed. In general, these methods include mounting one or more wafers on a rotating table that is continuously rotated under one or more source targets. A process gas can be provided and one or more of the source targets powered while the wafers are biased to deposit optical dielectric films on the one or more wafers. In some embodiments, a shadow mask can be laterally translated across the one or more wafers during deposition. In some embodiments, deposited films can have lateral and/or horizontal variation in index of refraction and/or lateral variation in thickness.

A method and system for computing and visualizing sedimentary attributes may include receiving, by a processor, paleo-geographic coordinates representing predicted approximate positions of particles of sediment deposited at a time period when a layer was originally formed. The processor may numerically compute or determine a sedimentation rate that varies laterally along the layer. The processor may determine a sedimentary attribute based on the lateral variation of the sedimentation rate along the layer with respect to the paleo-geographic coordinates. A monitor or display may display the sedimentary attribute of the layer in the present-day geological space.

The invention relates to Y-branch waveguide dual optical phase modulators with improved electro-optic (EO) frequency and step responses at frequencies below 1 Hz for use in low-frequency applications such fiber-optic gyroscopes. A Y-branch waveguide structure is formed in an EO substrate, with three or more electrodes used to form a waveguide phase modulator in each of two output waveguide arms. In one embodiment an insulating buffer layer is provided between at least a portion of the electrodes and the substrate for flattening the low-frequency EO response by reducing the modulation efficiency below 1 Hz. In one embodiment each of the waveguide phase modulators includes two ground electrodes extending along both sides of a signal electrode. A top portion of the substrate may be doped to reduce lateral variations of the substrate conductivity in the waveguide and non-waveguide portions thereof between corresponding signal and ground electrodes.

The invention discloses a shale heterogeneity classification and comparative method, which comprises:(1) building the isochronous stratigraphic comparison lattice for the vertical heterogeneity classification of the shale reservoir by the high-frequency sequence classification and comparation; (2) studying the macro heterogeneity in the isochronous stratigraphic comparison lattice and analyzing and establishing the vertical and horizontal change characteristics of the macro heterogeneity of different high-frequency sequences of the shale reservoir in the isochronous stratigraphic comparison lattice; (3) studying the micro heterogeneity in the isochronous stratigraphic comparison lattice and establishing the vertical and horizontal change characteristics of the micro heterogeneity of different high-frequency sequences of the shale reservoir; (4) classifying and comparing small layers, and conducting detailed classification of small layers in the isochronous stratigraphic comparison lattice according to the heterogeneity characteristics of the shale reservoir in research results of the macro heterogeneity and the micro heterogeneity. The method selects the shale reservoir with high heterogeneity both in vertical and lateral directions as stable and continuous output selecting layer and provides geological basis for shale gas' exploiting vertical selecting layer, plane division and development technique policy in the future.

The invention discloses a statics correction method based on seismic data, and particularly relates the statics correction method for a surface layer model which is established based on the shot point well depth. According to the statics correction method based on seismic data, the shot point well depth data are adopted when seismic data are collected, the well depths of all demodulator probes are obtained through interpolation, and the well depth value is virtual shot spot well depths of the demodulator probes. The shot point statics correction value and the demodulator probe statics correction value can be calculated according to the elevation of the shot point and the elevation of the demodulator probes and on the premise that the base level and replace speed are given. The demodulator probe statics correction value is the sum of the statics correction value of the water level of the demodulator probes and the statics correction value of a final base level of the water level. The shot point statics correction value and the demodulator probe statics correction value are used for conducting base level correction and eliminating time difference generated in the seismic record due to the fact that the lateral variation of the surface relief and the water level is uneven. The seismic data processed through the statics correction method can solve the statics correction problems that few micro log data exist and the signal-to-noise ratio of the seismic data is low. The signal-to-noise ratio and resolution ratio of seismic data imaging are improved, and the construction and accurate implementation of seismic data imaging are facilitated.

The invention discloses a method of conducting seismic frequency extension by utilizing acoustic logging, which comprises the following steps: making a wide-band synthetic seismic record through a reflection coefficient sequence obtained by acoustic logging date and density logging data, and selected high frequency seismic wavelet; comparing the synthetic wide-band seismic record with cross-well seismic traces to obtain a law of longitudinal high-frequency signal loss caused by a low-pass stratum filter; meanwhile, utilizing the contrastive analysis of a near-well seismic record and any seismic trace on a cross-well section to obtain the filter effect of lateral variation of the stratum; and by studying the amplitude spectrum properties of the filter, summarizing the properties of a longitudinal filter and a transversal filter on a seismic stack section, designing a frequency extension series inverse filter with longitudinal frequency loss and transversal frequency change, and using the frequency extension series inverse filter on a cross-well seismic stack section to achieve the purposes of extending the bandwidth and improving a stacked reflective seismic section resolution, and provide more detailed and reliable seismic information for the elaboration and the dynamic monitoring of oil and gas reservoir.

The invention relates to a driving safety early warning method. Vehicle driving inherent information and vehicle real-time driving information can be acquired. The vehicle driving inherent information comprises a width of a driving vehicle and a lane width, and the vehicle real-time driving information comprises time, driving speed of a driving vehicle, and a corner. The maximum lateral variation distance of the vehicle in the variation time period can be calculated according to the acquired vehicle real-time information. The driving behavior at the moment of the ending of the variation time period can be determined according to the maximum lateral variation distance and the vehicle driving inherent information, and whether the driving behavior is safe can be determined according to the driving behavior. When the driving behavior is not safe according to the determination result, the driving safety early warning prompt can be output, or the driving control signal can be transmitted to control the driving vehicle.

The invention is directed at a golf ball trajectory simulation method that employs arithmetic operations executed by a computer to analyze a trajectory of a golf ball having a plurality of dimples on a surface thereof when the ball is launched into flight. The trajectory of the ball is estimated by setting up a golf ball model within a virtual airflow space (field) where a grid has been generated; setting a weight for the golf ball model and applying initial conditions (initial velocity, launch angle, spin rate) to the ball model so as to cause the model to fly within the virtual airflow space (field); calculating a lift coefficient and a drag coefficient for the golf ball from an air stream velocity, direction and pressure calculated in each grid cell; and calculating a flight distance and left-to-right dispersion for the golf ball from launch until landing by calculating a change in height, a change in lateral direction, a change in velocity and a change in spin rate for the golf ball during flight.

An optical device includes a planar subwavelength grating (10) formed in a dielectric material and having a laterally varying, continuous grating vector. When used to modulate a beam of laterally uniform polarized electromagnetic radiation incident thereon, the device passes the incident beam with a predetermined, laterally varying transmissivity and/or retardation. When used to effect polarization state transformation, the device transforms a beam of electromagnetic radiation incident thereon into a transmitted beam having a predetermined, laterally varying polarization state. The device (214) can be used to provide radially polarized electromagnetic radiation for accelerating subatomic particles or for cutting a workpiece. The device (108) also can be used, in conjuction with a mechanism for measuring the lateral variation of the intensity of the transmitted beam, for measuring all four Stokes parameters that define the polarization state of the incident beam.

The invention provides a VSP-CDP stacking method and a three-dimensional VSP coverage number calculation method. The method comprises the following steps: inputting rms velocity spectra of upstream waves and downstream waves; dividing imaging grids according to a three-dimensional rms velocity model, the grid spacing being the size of a three-dimensional surface seismic imaging grid, and sequentially finding corresponding receiving points according to the grids; laying a three-dimensional VSP observation system; applying binning iteration-based VSP-CDP stacking method to the calculation of coverage number of the observation system. The binning iteration-based VSP-CDP stacking method uses a lateral variation velocity field to replace a single well based velocity model, and a binning iterative method to replace a reflection point based analytical method. The VSP-CDP stacking method and the three-dimensional VSP coverage number calculation method provided by the invention have the advantages of further enhancing the accuracy of VSP stack imaging, ensuring that enough coverage number is obtained in a target area, and the time of acquisition design can be obviously reduced.

A multi-scale seismic data joint imaging method based on fluctuation theory comprises the steps of: respectively measuring ground seismic data, cross-well seismic data and/or vertical seismic profile data within a block, namely at least two types of seismic data in a VSP method by adopting wave field direct downward continuation method so as to obtain pre-stack depth migration data; respectively conducting normalization treatment on the obtained pre-stack depth migration data of at least two types of seismic data, namely the ground seismic data, the crow-well seismic data and/or the vertical seismic profile data; and superposing the pre-stack depth migration data after normalization treatment to obtain a multi-scale data joint imaging result in the block. The method can combines the advantages of the ground seismic data, the cross-well seismic data and the vertical seismic profile data, is adapt to horizontal change of a velocity field better and maintains a certain degree of dynamic characteristics.

The invention discloses a silicon on insulator (SOI) pressure resistant structure with interface lateral variation doping, and relates to a semiconductor power device comprising a substrate layer, a medium buried layer, an active semiconductor layer and an interface lateral variation doping layer, wherein, the medium buried layer is arranged between the substrate layer and the active semiconductor layer; and the interface lateral variation doping layer is arranged between the medium buried layer and the active semiconductor layer, in the invention, by adopting the condition that the interface lateral variation doping layer is arranged in the active semiconductor layer on the interface of the medium buried layer, when the structure is used in the semiconductor device, and the dosage concentration of the silicon at the top of the lateral variation doping layer terminal interface is higher, thus effectively improving the longitudinal pressure resistance and the lateral pressure resistance of the device, thus the structure can effectively improve the pressure resistance of the whole device, and remit the problem that a 'hot spot' area is generated because the dosage concentration of a source end of a lateral variation doping structure of the whole active semiconductor layer is too low, which can be realized in a thick active semiconductor layer.

An electrically pumped VCSEL and a method of its fabrication are presented. The VCSEL comprises an active cavity material sandwiched between top and bottom DBR stacks, the top DBR having at least one n-semiconductor layer. The device defines an aperture region between the structured surface of the active cavity material and the n-semiconductor layer of the top DBR stack. The structured surface is formed by a top surface of a mesa that includes at least the upper n⁺⁺ layer of a p⁺⁺/n⁺⁺ tunnel junction and the surface of a p-type layer outside the mesa. The structured surface is fused to the surface of the n-semiconductor layer of the DBR stack due to the deformation of these surfaces, thereby creating an air gap in the vicinity of the mesa between the fused surfaces. The active region is defined by the current aperture which includes the mesa surrounded by the air gap, thereby allowing for restricting an electrical current flow to the active region, while the air gap provides for the lateral variation of the index of refraction in the VCSEL.

A method is provided for eliminating a polish stop layer from a polishing process. In particular, a method is provided which may include polishing an upper layer of a semiconductor topography to form an upper surface at an elevation above an underlying layer, wherein the upper surface does not include a polish stop material. Preferably, the upper surface of the topography formed by polishing is spaced sufficiently above the underlying layer to avoid polishing the underlying layer. The entirety of the upper surface may be simultaneously etched to expose the underlying layer. In an embodiment, the underlying layer may comprise a lateral variation in polish characteristics. The method may include using fixed abrasive polishing of a dielectric layer for reducing a required thickness of an additional layer underlying the dielectric layer. Such a method may be useful when exposing an underlying layer is desirable by techniques other than polishing.

The invention discloses a method for imaging an optimized angle of a well earthquake reflected wave, comprising the following steps: carrying out VSP-CDP conversion of each concentrical depth point according to well data of an objective area to obtain an imaging section set; obtaining an optimized angle upper limit value according to acoustic logging data or zero VSP speed data of the objective area; and stacking and imaging sections which are smaller than the optimized angle upper limit value in the imaging section set. The method can eliminate wave shape distortion, frequency reduction, polarity inversion and statistical noise interference of a small-angle area for wide-angle reflection and can increase a reflected wave imaging resolution ratio to really reflect the vertical and horizontal variation of underground media.

An article singulating conveyor assembly and method of singulating articles includes providing a conveying surface defining a plurality of tandem zones. The conveying surface travels in a longitudinal direction. Each of the zones includes a pair of laterally spaced side frame members and a plurality of generally parallel elongated driven rollers that are supported at the side frame members. The driven rollers are adapted to provide lateral variation in the longitudinal speed of the conveying surface. Each of the zones includes at least one drive motor that is adapted to drive the driven rollers in that zone. At least one article sensor is provided that is adapted to sensing articles in the zones. The driven rollers may be divided into a plurality of segmented rollers that are separately rotatable with a separate drive motor to drive corresponding segments for a zone. The drive motors for adjacent zones may be activated in a manner that creates a longitudinal gap between longitudinally adjacent articles.

A light-emitting semiconductor chip (100) is provided, having a first semiconductor layer (1), which is at least part of an active layer provided for generating light and which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).