The invention relates to the technical field of
wafer cutting, and provides a
cutting-up method of a
gallium arsenide wafer, in a cutter
grinding stage, two times of cutter
grinding are achieved through a cutter
grinding plate, on one hand, diamonds of a
grinding wheel blade can be exposed, a
chip pocket is generated, on the other hand, the
grinding wheel blade can be rounded, it is guaranteed that the
grinding wheel blade and a main shaft are concentric, and the
cutting-up efficiency is improved. Moreover, the cutting edge part in contact with the knife
sharpening plate can be damaged during knife
sharpening each time, and the cutting edge of the grinding wheel blade can be changed into a V shape, so that the purpose of trimming the shape of the cutting edge is achieved, the contact area between the cutting edge and a material is smaller in the product cutting process, the
impact crushing
impact force on the material is smaller, the breakage and cracks of particles after cutting can be obviously reduced, and the product quality is improved. The cutting quality of the
wafer is improved, so that the yield of wafer products is improved; in the cutting-up stage, the wafer is preferentially divided into a plurality of stepping wide-strip-shaped cutting channels, and then fine division is carried out, so that the material stress can be preliminarily released, and the large area of the wafer wide strip is enough to
resist the crack extension problem.