A pixel sensor
cell of improved
dynamic range and a design structure including the pixel sensor
cell embodied in a
machine readable medium are provided. The pixel
cell comprises a
coupling transistor that couples a
capacitor device to a photosensing region (e.g.,
photodiode) of the pixel cell, the
photodiode being coupled to a transfer gate and one terminal of the
coupling transistor. In operation, the additional
capacitance is coupled to the pixel cell
photodiode when the
voltage on the photodiode is drawn down to the substrate potential. Thus, the added
capacitance is only connected to the imager cell when the cell is nearing its charge capacity. Otherwise, the cell has a low
capacitance and
low leakage. In an additional embodiment, a terminal of the
capacitor is coupled to a “pulsed” supply
voltage signal that enables substantially full depletion of stored charge from the
capacitor to the photosensing region during a read out operation of the pixel sensor cell. In various embodiments, the locations of the added capacitance and photodiode may be interchanged with respect to the
coupling transistor. In addition, the added capacitor of the pixel sensor cell allows for a global
shutter operation.