144 results about "Photocurrent" patented technology

The application discloses an optical time domain reflectometry (OTDR) method, system and OTDR equipment for avoiding event blind area, and relates to the technical field of OTDR. The OTDR method adds a second detector to the ground end of a first detector, and detects the optical signal emitted by a second light source by using the second detector. Then, when measuring the OTDR curve of a to-be-measured optical fiber, the second driver is controlled to drive the second light source to emit a compensation optical signal within a pre-determined saturation time interval, so that the photocurrent detected by the second detector offsets and compensates the photocurrent detected by the first detector, and the current input to the amplification circuit is lower than the saturation threshold, thereby eliminating the event blind area caused by saturation, enabling the blind area event to be detected, and without adding a selection switch, thereby avoiding introducing additional noise, improving the optical fiber OTDR test accuracy and having better noise performance.

The present application relates to a kind of hAAG photoelectrochemical detection method based on sulfur vacancy engineering, belong to analytical detection technical field.The present application will prepare hairpin structure DNA to single-stranded DNA, sequentially join different concentrations of human alkyladenine DNA glycosylase (hAAG), endonuclease IV, exonuclease I and its reaction buffer;Dopamine solution is added to reaction, and the enzymatic reaction system of hAAG is obtained;CdZnS modified electrode is immersed in enzymatic reaction product solution and reacts, so that dopamine and zinc atom on the surface of CdZnS are combined by ortho-hydroxy coordination, and sulfur vacancy is induced to generate;Photoelectrochemical test is carried out to CdZnS modified electrode, the photocurrent signal is detected, the linear relationship between photocurrent signal and hAAG concentration is established, and the quantitative detection of hAAG is realized.The present application not only provides efficient strategy for hAAG detection, but also provides new ideas for performance optimization of sulfide-based photoelectrochemical device.

A pixel sensor may include a vertically arranged (or vertically stacked) photodiode region and floating diffusion region. The vertical arrangement permits the photodiode region to occupy a larger area of a pixel sensor of a given size relative to a horizontal arrangement, which increases the area in which the photodiode region can collect photons. This increases performance of the pixel sensor and permits the overall size of the pixel sensor to be reduced. Moreover, the transfer gate may surround at least a portion of the floating diffusion region and the photodiode region, which provides a larger gate switching area relative to a horizontal arrangement. The increased gate switching area may provide greater control over the transfer of the photocurrent and / or may reduce switching delay for the pixel sensor.

This invention discloses a method, apparatus, and related equipment for detecting defects in inkjet-printed OLED dry film, belonging to the field of optoelectronic information engineering. The method uses a laser with a spot size smaller than the pixel slot to irradiate the OLED panel. A detector array consisting of multiple sub-units receives the reflected and scattered light generated after irradiation. Then, the photocurrent intensity of each sub-unit is acquired. The photocurrent intensity of the sub-unit corresponding to the reflection center at the current moment is compared with that at the previous moment. When the change exceeds a first preset range, abnormal sub-units are identified based on their photocurrent intensity. Based on the number, location distribution, and photocurrent intensity of the abnormal sub-units, defects are eliminated or the defect type is determined. This method improves detection efficiency in industrial production scenarios without occupying production time, can be integrated with production cycles, and does not require additional large-scale evaporation or testing equipment. It is an excellent method for improving the overall yield of inkjet-printed OLED panels.

This invention belongs to the field of biosensor technology, specifically relating to an aflatoxin B1 sensor based on exchange catalysis and photocurrent polarity reversal, its preparation method, and its application. The sensor includes a reference electrode, a photosensitive substrate electrode, an AFB1-specific aptamer-trigger chain conjugate, a basement exchange catalytic nucleic acid amplification system, and an h-Zn1Cd5S-hairpin H conjugate. The sensor constructed by this invention is easy to operate, has a fast response speed, good repeatability, high detection sensitivity, and specificity. It can avoid interference from signal fluctuations, and its preparation method is simple, showing broad application prospects in aflatoxin B1 detection.

The application provides an avalanche photodiode focal plane array pixel gain simulation method and device, the method comprises the following steps: respectively under dark field conditions and light field conditions, a varying bias voltage is applied to an avalanche photodiode focal plane array, and a dark current response curve and a photocurrent response curve of an anode current of a pixel unit in the focal plane array are obtained respectively; under different bias voltages, a signal difference between the dark current response curve and the photocurrent response curve is extracted, and the pixel gain of the pixel unit is determined according to the signal difference. The pixel gain simulation method provided by the application can accurately obtain the pixel gain and is suitable for a silicon-based APD focal plane detector array with different pixel unit structures. In addition, the method can reveal the influence of internal electric field distribution changes caused by factors such as bias voltage on the array gain, thereby providing a theoretical basis and technical path for device optimization design in actual application scenarios.

This invention relates to an IL5 / Bi2MoO6 / MXene photoactive composite material, a low-background photoelectrochemical aptamer sensor, its preparation method, and its applications. The sensor is constructed by sequentially modifying chitosan, glutaraldehyde, complementary DNA strands, and a gold nanoparticle-labeled aptamer. A fixed capture probe and APT-Au synergistically achieve dual signal quenching, constructing an extremely low detection baseline. When the target analyte MUC1 is present, its specific binding to the aptamer causes APT-Au to detach, dissolving the dual quenching and significantly restoring the photocurrent, thereby achieving quantitative detection. This invention solves the problems of low efficiency, heterojunction instability, and high baseline in single quenching modes of existing photoelectric materials, achieving highly sensitive, highly specific, rapid, and low-cost detection of the breast cancer biomarker MUC1 in human serum samples, providing a novel, industrially feasible technical solution for large-scale early screening of breast cancer.

The utility model discloses a dust detector through control luminous time to control luminous quantity, including setting in the detection area's luminous element, light receiving element and be used for to the light current signal of light receiving element in producing amplification amplifier circuit, control and detect light emission and light receiving signal's singlechip, the drive circuit of luminous element adopts transistor switch circuit to control luminous time, the drive circuit includes transistor and current -limiting resistance, luminous element, transistor and current -limiting resistance series connection with power supply and form the electric loop, the transistor trigger control end is controlledly connected in the singlechip, the utility model discloses dust sensor through control luminous time realizes to luminous element luminous quantity control, through the luminous quantity of luminous element accurate control, can improve dust sensor measurement result's accuracy and reliability.

The embodiment of the application provides a kind of based on integrating sphere light source's photosensitive diode multispectral calibration device and method, for by dark current measurement, photocurrent correction and wavelength response fitting, photosensitive diode array is carried out wide band multispectral calibration.The device of the application includes integrating sphere device, multi-band adjustable light source module, the photosensitive diode array to be calibrated and control and analysis unit;The inner wall of integrating sphere device is high reflectivity diffuse reflection material;Integrating sphere device further includes trap detector, and trap detector is used for real-time monitoring the reflection loss of the inner wall of integrating sphere device;Trap detector is connected with control and analysis unit communication;Multi-band adjustable light source module is accessed integrating sphere device;The photosensitive diode array to be calibrated is composed of multiple photosensitive diodes;Control and analysis unit and multi-band adjustable light source module, the photosensitive diode array to be calibrated establish communication connection.

The application belongs to the technical field of photoelectric detectors, and discloses a high-performance two-dimensional perovskite photoelectric detector and a preparation method thereof. First, a SiO2 glass substrate is cleaned, and a precursor solution is dropped on the surface of the glass substrate. Chloroform antisolvent solution doped with ZnO quantum dots is dropped on the precursor solution. Then, ZnO quantum dots / (PEA)2PbI4 nanosheet thin film is formed by spin coating, and the thin film is annealed. The above steps are repeated multiple times to obtain a uniform thin film. The glass substrate with the uniform thin film is plated with gold by a vacuum evaporation method to obtain an electrode. The application improves the carrier migration rate by doping the concentration of ZnO quantum dots, improves the photocurrent size, obtains higher responsivity and detection rate, and shorter response time. The manufacturing process is simple and has strong repeatability. The application has high photocurrent size, high responsivity and high detection sensitivity. The application selects a suitable concentration of ZnO quantum dots. The application can be prepared in an air environment and has strong stability.

The application discloses a high-entropy organic small-molecule photocatalyst and a preparation method and application thereof, relates to the technical field of organic small-molecule materials, and the high-entropy organic small-molecule photocatalyst is composed of more than five organic small molecules with different chemical structures; the organic small molecules are prepared by one-pot reaction of at least one core unit monomer and at least two peripheral unit monomers. The multiple components of the high-entropy organic small-molecule photocatalyst prepared by the application cooperatively form an interface electric field, promote the separation and transmission of photo-generated carriers, enhance the photoelectric current response characteristics, improve the charge transmission capacity, and have a significant positive influence on the photocatalytic performance of the organic small molecules, and can be widely used in the field of photocatalytic hydrogen production.

The application discloses an optical multiplier system for processing high-speed data flow and a method thereof, and belongs to the technical field of semiconductors, comprising a stibonium quantum well laser, an intensity modulator, a phase modulator, a balanced homodyne detector and an oscilloscope; the stibonium quantum well laser is used as a light source, light signals output by the stibonium quantum well laser are evenly divided into two light beams by a Y-type beam splitter, and the two light beams are defined as x-vector light beams and y-vector light beams respectively; the two light beams sequentially pass through the intensity modulator and the phase modulator to complete real number and complex number coding; after the two light beams are coupled by a beam splitter / coupler, the two light beams are input to the balanced homodyne detector for detection, and the photocurrent output by the balanced homodyne detector is calculated to obtain a differential current, the differential current is collected and displayed in real time by the oscilloscope, and the differential current is the vector point multiplication operation result corresponding to the two vector light beams. The application has the characteristics of low cost, low energy consumption, high speed, expandability and the like.

A pixel unit and imaging array device for infrared detection and light-emitting display, relating to the technical field of photoelectric semiconductor devices. Each pixel unit comprises: an infrared photodetector (3), used for detecting an incident infrared signal and generating a photocurrent; a current amplifier circuit (1), having a reset end used for inputting a reset pulse signal, an input end (Iin) used for coupling an inputted photocurrent, and an output end (Iout) used for outputting a gain-amplified photocurrent, wherein the current amplifier circuit (1) controls a gain amplification coefficient of the photocurrent on the basis of the inputted reset pulse signal; and a light-emitting display (4), coupled to the output end (Iout) of the current amplifier circuit (1), wherein the light-emitting display is directly driven by the gain-amplified photocurrent to perform light-emitting display. The current amplifier circuit (1) in each pixel unit is directly used to perform gain amplification on the photocurrent generated by the infrared photodetector (3), and then the gain-amplified photocurrent is applied to the light-emitting display (4) to drive the light-emitting display (4) to perform light-emitting display, thereby optimizing the response speed of a device.

This invention discloses a fully optically modulated photoelectric synaptic device, its fabrication method, and its applications. This device successfully simulates the synaptic behavior of nerve cells within the ultraviolet to visible light spectrum. Furthermore, the device exhibits positive responses to both ultraviolet and visible light, with an increase in photocurrent. However, when irradiated with ultraviolet light first and then with visible light, the visible light inhibits the photocurrent generated by the ultraviolet light, causing a rapid decrease in photocurrent.

This relaxes the constraints on the layout of the stacked structure of semiconductor chips on which logarithmic transformation transistors and current-voltage transformation transistors used for event detection are formed. [Solution] The imaging device comprises a photoelectric conversion element, a logarithmic transistor that generates an optical voltage by logarithmically converting the optical current output from the photoelectric conversion element, and a current-voltage conversion transistor that converts the optical current into an output voltage based on the optical voltage generated by the logarithmic transistor. A second chip is stacked on a first chip on which the photoelectric conversion element is formed, and at least one of the logarithmic transistor and the current-voltage conversion transistor is formed on the first chip.

This invention relates to a method for amplifying the polarization ratio of a photodetector based on a two-dimensional semi-metallic material and a heterostructure, belonging to the field of photodetection technology. Based on a strategy combining a two-dimensional semi-metallic material and a heterostructure, a BP / MoS2 / WTe2 heterojunction is constructed, where BP is the light-absorbing layer, MoS2 is the barrier layer, and WTe2 is the contact layer. This invention not only achieves selective carrier transport and reduces dark current, but also allows WTe2 to reduce contact resistance and provide a fast carrier extraction channel, realizing asymmetric amplification of the photocurrent, thereby achieving active amplification of the polarization ratio even at zero bias. This invention breaks the limitation of the inherent anisotropy of materials on the magnitude of the polarization ratio, and uses a completely dry transfer process to fabricate polarization detection photodetectors, eliminating the need for additional polarization elements and chemical solution treatment. It boasts advantages such as simple process, low cost, high repeatability, and no pollution.

In one embodiment, a lidar system includes a light source configured to emit (i) local-oscillator light and (ii) pulses of light. The lidar system also includes a receiver configured to detect the local-oscillator light and a received pulse of light, the received pulse of light including a portion of one of the emitted pulses of light scattered by a target located a distance from the lidar system. The receiver includes a detector configured to produce a photocurrent signal corresponding to a coherent mixing of the local-oscillator light and the received pulse of light. The detector includes a first input side and a second input side located opposite the first input side, where the received pulse of light is incident on the first input side of the detector, and the local-oscillator light is incident on the second input side of the detector.

A display device includes display pixels each including a light emitting part including a light emitting element and a pixel driver applying a driving current to the light emitting element, and light sensing pixels each including a light sensing part including an optical element and a sensing driver, the sensing driver applying a sensing current to a sensing line according to a photocurrent of the optical element. The sensing driver includes a first sensing transistor controlling the sensing current flowing through the sensing line according to a voltage of a first electrode of the optical element, and a second sensing transistor initializing the first electrode of the optical element to a first level voltage. A channel layer of the first sensing transistor and a channel layer of the second sensing transistor are made of different materials.

The present application relates to the technical field of perovskite devices, and particularly relates to a packaging method of a perovskite device. The packaging method provided by the present application comprises the following steps: mixing methyl methacrylate, 2-methyl-2-acrylic acid-2-hydroxyethyl ester phosphate and 2-hydroxy-2-methyl-1-phenylpropanone to obtain a packaging slurry; coating the packaging slurry on the surface of the perovskite device, covering a glass plate, and performing light curing. The packaging method can improve the photoelectric current density of the device, thereby improving the efficiency of the device, and can significantly improve the outdoor stability of the device.

This invention relates to a fast-response RSSI circuit, a high-speed burst-mode transimpedance amplifier chip, and an optical receiver module, belonging to the fields of integrated circuits and optical communication. The invention addresses the problems of traditional optical receiver modules relying on external, independent high-voltage sample-and-hold chips to monitor APD photocurrent, resulting in large PCB area, high system cost, low integration, and complex R&D and debugging. The RSSI circuit described in this invention is integrated within the transimpedance amplifier chip and manufactured using the same constant-voltage process. It includes: a transimpedance amplification and monitoring unit providing a monitoring differential voltage proportional to the input photocurrent; an integral feedback control unit generating a global control voltage; a dynamic current allocation unit adaptively allocating a reference current in response to the global control voltage; a DC component management unit extracting the DC component of the input node; a bias calibration unit eliminating fixed bias components; and a signal output unit outputting a received signal strength indication signal proportional to the input photocurrent.

This invention discloses a method, substrate, and system for detecting laser beam-induced current in the PN junction region profile of an InGaAs photodetector, belonging to the field of semiconductor optoelectronic device characterization technology. The method includes: cleaving a chip with completed front-side processing along the natural cleavage surface of InP to obtain a smooth profile; fixing the chip with the profile facing upwards onto a composite sapphire bonding substrate, and extracting electrodes through conductive silver paste and ultrasonic bonding; performing a two-dimensional step-scan of the profile using a 900-1100nm laser, simultaneously acquiring photocurrent signals to obtain a two-dimensional photocurrent distribution map of the profile; and quantitatively extracting junction depth, lateral diffusion width, and uniformity parameters based on the photocurrent peak position. This invention can directly obtain the longitudinal two-dimensional electrical activity distribution of the PN junction region, effectively avoiding interference between the surface passivation layer and the InP cap layer, and achieving a visual assessment of junction depth, lateral diffusion, and defects, providing a realistic and efficient detection method for device process optimization.

This invention belongs to the field of optical technology. It provides a method and system for improving the power monitoring range of a photodetector in an optical chip. The method involves: acquiring the optical signal from the optical chip using a photodetector; turning off the light source and applying a zero-voltage bias to the photodetector to minimize dark current, recording the acquired dark current for dark current calibration; turning on the light source and acquiring the photocurrent signal from the photodetector; calculating the optical power based on the responsivity of the photodetector material, the dark current, and the photocurrent signal; and controlling the temperature of the entire optical chip within a set range throughout the process. This invention only requires a photodetector with a zero-voltage bias. By controlling the local temperature to reduce the fluctuation of the dark current and combining this with the material's responsivity analysis, the measured current signal can be directly used to monitor the corresponding optical signal, thus achieving wide-range optical power monitoring.

The application discloses a method for solving color deviation of a three-color Mini LED backlight liquid crystal display device and a liquid crystal display device, and relates to the technical field of liquid crystal display, and comprises the following steps: adjusting RGB backlight currents of a white field, recording a set of RGB backlight current ratios when color coordinates of the white color reach design target values; adjusting RGB backlight currents of red, green and blue single-color fields respectively, recording a second set of RGB backlight current ratios, so that the RGB synthesis obtains the design target values, and obtaining coordinate points W, R, G and B of the white color, the red color, the green color and the blue color on a CIE chromaticity diagram respectively; performing segmentation processing on a to-be-displayed image, counting average image color coordinates of each block as to-be-displayed colors, obtaining a coordinate point C of the to-be-displayed colors on the CIE chromaticity diagram, and calculating RGB current values of backlight of the block according to relative positions of C, R, G, B and W and the two sets of RGB backlight current ratios. The application can guarantee a color gamut and solve the color deviation phenomenon.

This invention discloses a high-pass filter photoelectric conversion circuit system for TDLAS gas concentration detection, comprising: a laser driving module, a laser, a photoelectric sensor, and a photoelectric conversion circuit module. The laser driving module is electrically connected to the laser, and the photoelectric sensor is electrically connected to the photoelectric conversion circuit module. The laser driving module generates a synthesized signal to drive the laser. The laser generates laser light that irradiates a Herriott gas chamber. The photoelectric sensor receives the light signal from the Herriott gas chamber and converts it into a photocurrent signal, which is then sent to the photoelectric conversion circuit module. The photoelectric conversion circuit amplifies only the high-frequency components of the photocurrent, realizing the function of a high-pass filter amplification circuit. This ensures that during the primary conversion process, while suppressing useless low-frequency signals, the useful high-frequency signals are sufficiently amplified, thus reducing cascade amplification noise, improving the signal-to-noise ratio, and enhancing anti-interference performance.

This invention belongs to the field of biomedical functional materials technology, and relates to an antibacterial and healing-promoting photosensitizer, its preparation method, and its uses. The photosensitizer is a defective MIL-88B@MIL-88C composite material, wherein defective MIL-88B serves as the substrate, and MIL-88C grows on the surface and / or in the pores of the defective MIL-88B. This photosensitizer significantly improves the photogenerated carrier separation efficiency, reduces impedance, enhances photocurrent response, and can efficiently generate reactive oxygen species under light irradiation. Antibacterial experiments show that it has excellent bactericidal effects against Staphylococcus aureus, Escherichia coli, and methicillin-resistant Staphylococcus aureus, and is not prone to inducing drug resistance. Simultaneously, this photosensitizer has good biocompatibility, promotes cell migration, and has significant hemostatic function. Animal models show that it can effectively accelerate the healing of skin defects.

The application discloses a PON distributed intelligent computing task scheduling method and belongs to the technical field of optical access network communication technology. The application obtains the link attenuation coefficients of each optical network unit through an optical line terminal and broadcasts; the allocation information of a differential double-wavelength channel and a gradient vector is established and broadcasted; a differential double-wavelength mapping is used to allocate target optical power to gradient components, and each unit is instructed to transmit after compensation in combination with the attenuation coefficients; optical signals are received on the differential double-wavelength channel and are converted into photoelectric current, and a global gradient vector is constructed after dark current is eliminated; the maximum value of the net photoelectric current difference value is counted to adaptively update the mapping coefficients and broadcast, and the global model parameters are updated and issued to each unit to complete synchronization. The application solves the problems of communication bottlenecks in the existing gradient aggregation and a large dynamic range of optical signal power.

This application provides a light sensor readout circuit and chip for reading the current of a light sensing module. The light sensor readout circuit includes an oscillation module, a comparison module, a charge output module, and an integration module. The oscillation module outputs an oscillation signal, the comparison module compares a reference signal with the oscillation signal and outputs a comparison signal, the charge output module outputs a charge based on the comparison signal, and the integration module changes the oscillation frequency of the oscillation module based on the charge output by the charge output module. The amount of charge output by the charge output module is equal to the amount of charge passing through the light sensing module. This application can accurately measure the current of the light sensing module, overcoming the difficulty of detecting the small photocurrent generated by the light sensing module using conventional current detection methods.

The application discloses a kind of ultrafast pulse laser autocorrelation measurement system and method, comprising: beam splitting unit;Reference light path;Delay light path;Adjustable delay unit;Delay light mirror group;Reference light mirror group;Combining unit;Focusing unit;Asymmetric air nanoslit photodetector, for receiving the light beam output by combining unit and focusing unit, and output corresponding photocurrent signal;Signal acquisition and processing unit, for acquiring photocurrent signal, and obtaining the intensity autocorrelation curve of ultrafast pulse laser according to the time delay change relationship of photocurrent signal, and inversion obtains the pulse width information of ultrafast pulse laser.The application utilizes asymmetric air nanoslit photodetector to directly output photocurrent signal, realizes the autocorrelation measurement of ultrafast pulse laser, without nonlinear crystal, compact structure, easy to integrate, suitable for measuring femtosecond or picosecond ultrafast pulse laser.

The application discloses a BiVO4 / CoO x / VO2 / FeOOH photoanode composite material preparation method and artificial leaf device application, and belongs to the technical field of new energy materials. x By introducing CoO x and VO2 as a synergistic hole storage layer, the photoanode can realize effective storage and regulation of photo-generated holes in different potential intervals, thereby promoting the spatial separation of photo-generated carriers, inhibiting electron-hole recombination, and significantly improving the photocurrent density of the photoanode. x In addition, FeOOH is further introduced as an oxygen evolution assistant catalyst to improve the water oxidation reaction kinetics, and a BiVO4 / CoO x / VO2 / FeOOH composite photoanode is constructed. By integrating with a silicon photovoltaic cell, an artificial leaf device is formed, which exhibits excellent photoelectrocatalytic activity and long-term operation stability in the process of photoelectrochemical water splitting.

This invention provides a photodiode current detection device and method with charge enrichment, enabling real-time acquisition and detection of both strong and weak signals. For strong signals, the real-time photocurrent signal can be directly acquired; for weak signals, the photodiode junction capacitance is used as a charge storage device. By exposing the photodiode to weak light for a period of time, the photocurrent will integrate and accumulate on the junction capacitance, resulting in a stronger accumulated signal, which is then measured, thus achieving weak signal detection. Applying this detection device and method to the chemiluminescence reaction principle for NO gas detection, the charge enrichment mode for detecting low-concentration NO gas yields a high signal-to-noise ratio signal, improving sensitivity. The direct measurement mode for detecting high-concentration NO gas does not affect the upper concentration limit of NO detection. The combination of these two operating modes significantly improves the detection performance and concentration range of the miniaturized NO detector.