The application belongs to the technical field of power devices, and provides a softness modulation type IGBT device and a preparation method and a
chip thereof. A softness modulation zone including an N-type
diffusion layer and a local
carrier lifetime control layer is formed between an N-type field termination layer and an N-type drift layer, the
doping concentration of the N-type
diffusion layer is less than the
doping concentration of the N-type field termination layer, then a front IGBT structure and a front protective layer are formed on the N-type drift layer, so that when the IGBT device is at a lower working
voltage,
carrier current can be maintained at the end of device turn-off, and turn-off softness is maintained, turn-
off time and turn-off loss are reduced, when the IGBT device is at a higher working
voltage, the depletion layer of the device can be
cut off in the N-type
diffusion layer, so that the turn-off current of the IGBT device will not oscillate, and the problems of long current
tail, large loss and high risk of
overvoltage failure of the current IGBT device under
voltage fluctuation are solved.