200results about How to "Increase current density" patented technology

The invention discloses a bimetallic composite catalyst of copper and rare earth, a preparation method of the bimetallic composite catalyst and application of the bimetallic composite catalyst in electrochemical reduction of carbon dioxide. The preparation method of the bimetallic composite catalyst comprises the following steps: mixing copper salt and rare earth metal salt in water, adding ammonium carbonate and inorganic alkali into the mixture, stirring and reacting, and centrifuging, washing and drying the mixed solution to obtain a catalyst precursor; calcining the catalyst precursor to obtain the bimetallic composite catalyst, the Cu and rare earth bimetallic compound catalyst has the advantages of high current density, high selectivity, good system stability and long service life when being used for electrically reducing CO2. The catalyst has rich active sites, has a large surface area, can be fully contacted with an electrolyte and CO2, and can overcome the limitation of substance transfer. Selective output of methane or multi-carbon products is efficiently achieved by regulating and controlling the molar ratio of copper to rare earth elements, the partial current density of methane and the multi-carbon products reaches the industrialization level, and the catalytic effect is excellent.

The invention provides a laser-induced sintering processing method which is applied to an 0BB double-sided electrode battery, a first electrode and a second electrode are adopted to make contact with all thin grid lines on the front face of a battery piece and all thin grid lines on the back face of the battery piece respectively, and a laser beam is controlled to scan the battery piece while reverse voltage is applied to the battery piece through the first electrode and the second electrode; the first electrode comprises N strip-shaped electrodes which are arranged at intervals; each strip-shaped electrode is vertically intersected and contacted with all the fine grid lines on the front surface of the battery piece; the width, needing to be scanned at a time, of the battery piece is divided into a plurality of areas, so that the distance between the strip-shaped electrode and the laser scanning area is shortened, the current density of each thin grid line is improved, the contact specific surface area of metal particles and silicon is increased, the contact resistance of the metal grid lines is reduced, and the service life of the battery piece is prolonged. Therefore, the purpose of high-efficiency laser-induced sintering of the 0BB double-sided electrode battery is achieved.

The invention discloses a double-groove super junction structure and a manufacturing method thereof, the double-groove super junction structure comprises a plurality of MOS cells which are connected in parallel, and each MOS cell comprises a drain electrode, an upper metal source electrode, a grid electrode, a semiconductor epitaxial layer, a substrate layer, a P well layer and an N well layer; a groove is formed between adjacent MOS cells and in the middle of the heavily doped P well layer I through etching, an oxide layer is deposited at the bottom of the groove, a side metal source electrode is arranged on the surface of the oxide layer, and the top of the side metal source electrode is in contact with the upper metal source electrode; the side surface of the side metal source is in ohmic contact with the N well layer, the lightly doped P well layer I and the heavily doped P well layer I; the grid electrode is a longitudinal groove type grid electrode and is arranged between the two N well layers of the single MOS cell, and the grid electrode is connected with the N well layers, the first lightly-doped P well layer and the diffusion layer in an isolated mode through a grid oxide layer. According to the invention, the injection depth of the heavily doped P well layer I is increased through the groove, and the (11-20) surface channel is adopted, so that the interface state density is greatly reduced, and the overall size of the device is reduced.

The invention discloses an elliptical wave-shaped runner structure of a solid oxide fuel cell and an optimization method of the elliptical wave-shaped runner structure, the runner structure comprises a cathode connecting piece, a single cell and an anode connecting piece which are sequentially arranged from top to bottom, the cathode connecting piece is connected with the single cell to form a cathode runner, and the anode connecting piece is connected with the single cell to form an anode runner; the anode connecting piece is connected with the single battery to form an anode flow channel; projections of the cathode flow channels and the anode flow channels on the surfaces of the single cells are rectangular; and the surfaces of one sides, far away from the single cells, of the cathode flow channels and the surfaces of one sides, far away from the single cells, of the anode flow channels are wavy concave-convex curved surfaces. The flow channel structure disclosed by the invention can reduce the pressure drop of the flow channel, improve the non-uniform distribution of gas in the flow channel, improve the mass transfer efficiency, promote heat exchange and improve the performance of the battery.

The invention discloses a novel super-junction trench MOS power device and a preparation method thereof, and relates to the technical field of semiconductor devices. The base layer region is arranged on the upper surface of the substrate; the first P-type column and the second P-type column are arranged in the base layer area and are not adjacent to each other; the P-type layer is arranged on the upper surfaces of the first P-type column and the second P-type column; the first groove and the second groove penetrate through the P-type layer and are correspondingly arranged in the first P-type column and the second P-type column; the dielectric layer is arranged on the upper surfaces of the first groove and the second groove; the first contact hole, the second contact hole and the third contact hole penetrate through the dielectric layer and are correspondingly formed in one side of the first groove, one side of the second groove and the P-type layer between the two grooves; and the metal region is arranged in the first contact hole, the second contact hole, the third contact hole and the upper surface of the dielectric layer. The conduction and switching loss of the MOS power device can be reduced, and the impact resistance can be improved at the same time.

The invention discloses a spin orbit moment magnetic tunnel junction, a majority gate spin logic device and cascade of the majority gate spin logic device, and the magnetic tunnel junction comprises an electrode layer, an artificial antiferromagnetic reference layer, an insulating tunneling layer, a magnetization free layer and an abnormal spin orbit moment layer which are sequentially stacked from top to bottom, the artificial antiferromagnetic reference layer comprises a first ferromagnetic layer, a non-magnetic spacer layer and a second ferromagnetic layer which are sequentially stacked from top to bottom, and the first ferromagnetic layer has vertical magnetization with a fixed direction; the electrode layer in contact with the first ferromagnetic layer has in-plane polarization to adjust the magnetization direction of the second ferromagnetic layer, and the magnetic free layer has vertical magnetization with variable direction; and the abnormal spin-orbit moment layer in contact with the magnetic free layer has an in-plane magnetization direction to generate an abnormal spin Hall effect, so that the magnetization of the magnetic free layer is overturned, the resistance state of the spin-orbit moment magnetic tunnel junction is changed, and a logic function is realized.

The invention relates to a method for improving the welding spot quality of resistance spot welding of a three-layer plate, which adopts an upper electrode cap and a lower electrode cap which are different from each other, effectively improves the spot welding nugget deviation of the three-layer steel plate, and widens the spot welding process window phenomenon. The spot welding method comprises the following steps: 1, performing surface treatment on a plate, and assembling in a lap joint form; 2, selecting an electrode cap; and thirdly, welding is conducted, and resistance spot welding of the three-layer steel plate is completed. The method has the advantages that the surface quality is good in the welding process, and no shrinkage cavity is generated; 2, the nugget deviation is small; thirdly, the spot welding process window reaches more than 2kA, and the spot welding process window is improved; and fourthly, the process is simple, production efficiency is high, cost is low, spot-welded joints are good in quality, and production and application are easy.

The invention provides an X-ray photovoltaic radiation cell based on a gallium-containing semiconductor and a preparation method of the X-ray photovoltaic radiation cell. The gallium-containing semiconductor X-ray radiation photovoltaic cell comprises a gallium-containing semiconductor transduction unit and an X-ray radiation source 55Fe arranged on the semiconductor transduction unit, wherein the semiconductor transduction unit containing gallium comprises at least one of GaAs (gallium arsenide), GaInP (gallium indium phosphide), GaP (gallium phosphide) and Ga2O3 (gallium trioxide). According to the invention, the structure of a radiation photovoltaic cell is adopted, the output power density of an X-ray radioactive source 55Fe can be effectively improved, the penetration depth of the X-ray source 55Fe in a semiconductor can be effectively shortened by taking GaAs, GaInP, GaP and Ga2O3 as semiconductor materials, and meanwhile, the collection capability of current carriers is effectively improved by adjusting the total thickness of a semiconductor transduction unit and the doping concentration of each layer, so that the performance of the X-ray source 55Fe is improved. And finally, the preparation of the X-ray radiation photovoltaic cell with high output power and high energy conversion efficiency is realized.

The invention relates to a back contact solar cell which comprises a substrate. A first doping layer and a second doping layer which are arranged at intervals in an interdigital mode are arranged on the same surface of the substrate, and the first doping layer and the second doping layer have opposite doping types. The substrate is further provided with an isolation groove, the isolation groove is arranged between the first doping layer and the second doping layer, and the isolation groove is used for separating the first doping layer from the second doping layer. The first doped layer comprises a first main body part and a first finger part connected to the first main body part, and the second doped layer comprises a second main body part and a second finger part connected to the second main body part. The first finger part comprises a plurality of first sub-parts which are in contact with each other and extend towards the second main body part, and the extension lengths of the first sub-parts are different. The second finger part comprises a plurality of second sub-parts which are in contact with one another and extend towards the first main body part, and the extension lengths of the second sub-parts are different.

The invention discloses a novel europium-cerium flow battery electrolyte and a preparation method thereof, and belongs to the technical field of flow battery energy storage. The theoretical voltage of the novel europium-cerium flow battery is 1.9 V, and the novel europium-cerium flow battery has higher energy density and power density. According to the synthesis strategy, a chelating agent is added into a solution containing europium or cerium, the molecular size of the formed chelate is large, and cross contamination caused by active ion transmembrane is avoided. The chelating agent can stabilize the reduction state of metal ions and slow down the oxidation reaction between the electrolyte and oxygen. The electrolyte is low in cost and suitable for being used in a neutral environment, europium and cerium are rare earth metals, have rich resource reserves, a complete industrial chain, advanced technical accumulation and policy support of the government in China, are matched with a chelating agent to improve oxidation-reduction kinetics, can be applied to a photovoltaic energy storage system on a large scale, and has a wide application prospect. Wide application prospects are also realized in the aspect of novel power automobiles.

A carbon dioxide electrolysis cell module, an electrolytic carbon dioxide reduction system and a reduction method wherein the carbon dioxide electrolysis cell module comprises: a stack assembly formed by stacking single stack groups for electrolyzing a cathode reactant and an anode reactant and producing a cathode product, the single stack group comprising: an ion exchange membrane having a plurality of membrane holes; the anode runner plate is provided with a first through hole and an anode runner; the cathode runner plate is provided with a second through hole corresponding to the first through hole and a cathode runner; an anode catalyst; a cathode catalyst; and an air blocking gasket. A first end plate; a second end plate; the first insulating plate is provided with a first insulating plate through hole and a first collector plate groove which correspond to the first inlet and the first outlet of the first end plate; the second insulating plate is provided with a second insulating plate through hole and a second collector plate groove corresponding to the second inlet and the second outlet of the second end plate; and two collector plates. Therefore, the energy consumption required for electrolyzing the carbon dioxide is small, and the effect of saving energy is achieved.

The invention provides a silicon carbide MOSFET device and a preparation method thereof, and relates to the technical field of semiconductors. Comprising source electrode metal, a silicon carbide structure, an N-type second silicon carbide epitaxial layer, an interlayer insulating medium, a first P-type doped region, a second P-type doped region, a first N-type doped region, an N + type first source region, a second N-type doped region, a P-type body region and an N + type second source region, a source trench penetrates through the N-type second silicon carbide epitaxial layer into the first P-type doped region and the second P-type doped region, the outer side of the source trench is surrounded by the P-type source region, and source metal is arranged in the source trench; a gate oxide layer is arranged in the gate trench, polycrystalline silicon is deposited in the gate trench to serve as a gate, the bottom of the gate oxide layer is in contact with a first P-type doped region, a first N-type doped region and an N + type first source region which are periodically arranged, and the bottom of the gate oxide layer is in contact with a second N-type doped region which is periodically arranged. The gate oxide layer can be protected, the electric field intensity of the gate oxide layer at the corner can be reduced, and the on-resistance of the silicon carbide MOSFET device can be reduced.

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell capable of reducing LID, a preparation method of the back contact cell and a cell assembly. The back contact cell capable of reducing the LID comprises a silicon wafer, and a light-receiving surface passivation layer and an anti-reflection layer which are sequentially arranged on a light-receiving surface of the silicon wafer, and the light-receiving surface passivation layer comprises a first tunneling oxide layer and a hydrogen-doped and carbon-doped silicon layer which are sequentially arranged; the silicon layer is amorphous silicon or polycrystalline silicon; the anti-reflection layer comprises a hydrogen-doped silicon carbide film layer, the hydrogen-doped silicon carbide film layer comprises a first hydrogen-doped silicon carbide layer and a second hydrogen-doped silicon carbide layer which are sequentially arranged, the carbon doping concentration of the first hydrogen-doped silicon carbide layer is smaller than that of the second hydrogen-doped silicon carbide layer, the thickness of the first hydrogen-doped silicon carbide layer is 10-30 nm, and the thickness of the second hydrogen-doped silicon carbide layer is 50-100 nm. According to the invention, the passivation effect, the optical effect and the LID anti-attenuation capability can be considered, the LID is reduced, the battery stability is improved, and the battery reliability is improved.

The invention provides a fuel cell gas diffusion layer and a preparation method and application thereof, the fuel cell gas diffusion layer comprises a substrate layer and a microporous layer arranged on the surface of the substrate layer, and the microporous layer comprises first carbon black and second carbon black; the first carbon black comprises at least one of Vulcan XC72, Ketjenblack EC-300J and Super P-Li, and the second carbon black comprises at least one of a carbon nanotube and a carbon nanofiber with the graphitization degree of 90-95%; wherein the diameter of the carbon powder is 10-50 nm; the diameter of the carbon nanotube is 2-20 nm, the length of the carbon nanotube is 1-15 [mu] m, and the length-diameter ratio of the carbon nanotube is 100-500; the diameter of the carbon nanofibers is 100-500 nm, the length of the carbon nanofibers is 5-30 [mu] m, and the length-diameter ratio of the carbon nanofibers is 10-100. The gas diffusion layer of the fuel cell has relatively good hydrothermal management capability, and the performance of the fuel cell can be improved.

The invention discloses a power supply module. Comprising an inductor group, a printed circuit board top plate located above the inductor group, a first power device chip and a second power device chip which are located on the printed circuit board top plate, and an output capacitor substrate layer located below the inductor group, a first set of discrete capacitors embedded within the output capacitor substrate layer and a second set of discrete capacitors embedded within the output capacitor substrate layer. The first power device chip is electrically connected to the first winding of the inductor group through the PCB top plate to provide a first output voltage at a first output voltage node. The second power device chip is electrically connected to a second winding of the inductor group through the PCB top plate to provide a second output voltage at a second output voltage node. A first set of discrete capacitors is connected in parallel between the first output voltage node and ground. A second set of discrete capacitors is connected in parallel between the second output voltage node and ground. The power supply module has relatively high integration level and current density.

The invention belongs to the technical field of preparation of electrolyzed water catalysts, and particularly relates to a preparation method and application of an anion intercalation r-Ru-NiFe-LDH catalyst. The foam iron is subjected to washing pretreatment and freeze drying; the preparation method comprises the following steps: putting foam iron into an alkaline aqueous solution of nickel salt, and carrying out hydrothermal reaction to obtain an anion intercalated NiFe-LDH precursor growing on the foam iron; and putting the anion intercalated NiFe-LDH precursor into a ruthenium chloride solution, carrying out hydrothermal reaction again, taking out, drying, and carrying out reduction treatment to obtain the anion intercalated ruthenium-loaded NiFe-LDH catalyst growing on the foam iron. The invention provides a new idea for research and development of a seawater electrolysis bifunctional catalyst with high activity and stability under high current density, and has a wide industrial application prospect.

The utility model belongs to the technical field of electrolytic baths, and particularly relates to a pure water hydrogen production PEM electrolytic bath structure which comprises an anode plate and a cathode plate, the anode plate is provided with an oxygen outlet and a water inlet, the water inlet is fixedly provided with a first connecting shell and a second connecting shell, the first connecting shell is symmetrically provided with connecting assemblies, and the second connecting shell is fixedly provided with a second connecting shell. A filter screen is arranged on the frame and located on one side of the water inlet. According to the utility model, pure water can be conveniently filtered by the filter screen, tiny impurities in the pure water can be intercepted by the filter screen, water flow containing the impurities is prevented from entering the electrolytic bath, when the filter screen is regularly cleaned, the first connecting shell is detached from the second connecting shell by operating the connecting assembly, and then the frame is pulled to move out of the second connecting shell, so that the filter screen is cleaned; the filter screen is arranged on the filter screen to clean impurities on the filter screen, blockage of the filter screen caused by impurity accumulation is avoided, adverse effects of mechanical impurities possibly contained in pure water on the electrolysis process are avoided by filtering the pure water, and the purity of hydrogen produced by the electrolytic bath is improved.

The invention discloses an electrochemical preparation method of a component-controllable indium-indium oxide nanosphere composite catalyst and CO2 reduction application of the component-controllable indium-indium oxide nanosphere composite catalyst. The component-controllable indium-indium oxide nanosphere composite catalyst is prepared from indium nitrate, urea, trisodium citrate, deionized water, absolute ethyl alcohol, a carbon paper electrode and Nafion. Different indium oxide nanosphere precursors are synthesized under the high-temperature and high-pressure reaction conditions of a one-step hydrothermal method, the precursors are placed in a muffle furnace to be subjected to high-temperature calcination to obtain indium oxide nanospheres, the obtained indium oxide nanospheres are subjected to electrode sheet preparation, and the indium-indium oxide nanosphere composite catalyst with controllable components is obtained through electrochemical reduction treatment. The composite material is applied to CO2 electrochemical reduction.

The invention belongs to the technical field of automobile power assemblies, and particularly relates to a three-in-one oil cooling electric drive assembly. Comprising a speed reducer, a motor, a controller and an integrated shell. The speed reducer and the motor are installed on the two adjacent sides of the integrated shell correspondingly. A mounting groove is formed in the integrated shell; the controller is mounted in the mounting groove; a cooling oil channel is formed in the integrated shell; the cooling oil duct is communicated with the speed reducer, the motor, the controller and the integrated shell; one end of the cooling oil duct is communicated with the oil pump, and the other end of the cooling oil duct is communicated with the first main oil duct, the second main oil duct and the third main oil duct; the controller, the motor and the speed reducer share an oil duct, the heat dissipation efficiency of the controller is improved, the complex staggered cooling paths are avoided, and the size of an electric drive assembly is reduced.

The utility model provides a large-current trench gate field cut-off IGBT power device. The large-current trench gate field cut-off IGBT power device comprises a heavily doped first conductive type substrate; a heavily doped second conductive type collector region is arranged on the back surface of the first conductive type substrate, and collector metal is arranged on the back surface of the second conductive type collector region; a first conductive type buffer layer is arranged on the front surface of the first conductive type substrate; a lightly doped first conductive type epitaxial layer is arranged on the first conductive type buffer layer; a gate trench, a lightly doped second conductive type body region and a voltage dividing ring are arranged at the top in the first conductive type epitaxial layer; wherein the gate trench and the second conductive type body region are located in an active region of the device, and the voltage dividing ring is located in a terminal protection region of the device; the plurality of gate trenches are arranged in parallel, and two sides of the plurality of parallel gate trenches are respectively provided with a second conductive type body region; the number of the voltage dividing rings is at least one. The device has the advantages of high reverse breakdown voltage, high forward current capability and the like.

The invention discloses a wide bandgap power diode with a periodic composite anode, which comprises a wide bandgap semiconductor material substrate layer, a third anode groove, a wide bandgap semiconductor material epitaxial layer, and a periodic first anode groove and a periodic second anode on the wide bandgap semiconductor material epitaxial layer from bottom to top, a first dielectric layer and a second dielectric layer are sequentially arranged on the upper surfaces of the first anode groove and the wide bandgap semiconductor material epitaxial layer, a second dielectric layer is arranged on the upper surfaces of the second anode groove and the wide bandgap semiconductor material epitaxial layer, and a third dielectric layer is arranged on the third anode groove. And a metal anode and a metal cathode are respectively arranged on the upper surface of the wide bandgap semiconductor material epitaxial layer and the lower surface of the wide bandgap semiconductor material substrate layer. Benefited from the periodic composite anode structure, the device has the performance advantages of high current density, high breakdown voltage, low on-resistance and low reverse electric leakage.

The invention discloses application of an anaerobic baffle plate-microbial electrolysis-constructed wetland coupling process in the aspect of rural domestic sewage treatment. The principle is based on a novel volatile fatty acid (VFAs) comprehensive utilization technology. The anaerobic baffle plate-microbial electrolysis-constructed wetland coupling process is mainly composed of a four-compartment anaerobic baffle plate reactor and a multi-section multi-stage microbial electrolysis and horizontal subsurface flow type constructed wetland coupling reactor, and the specific working process is as follows: (1) rural domestic sewage is used as inlet water, firstly enters the anaerobic baffle plate reactor and then enters the horizontal subsurface flow type constructed wetland coupling reactor; carrying out anaerobic hydrolysis to produce VFAs and gas production reaction; (2) starting a microbial electrolysis-constructed wetland coupling reactor; and (3) respectively introducing effluent and produced gas of the anaerobic baffled reactor into a microbial electrolysis-constructed wetland coupling reactor, integrally regulating and controlling the structure and activity of a microbial community, efficiently degrading VFAs into CO2 and CH4, and simultaneously removing nitrogen and phosphorus pollutants, thereby realizing the recycling of sewage treatment.

The invention discloses a self-aligned embedded gate metal IGBT (Insulated Gate Bipolar Translator) and a manufacturing method. The self-aligned embedded gate metal IGBT comprises a semiconductor layer arranged on the front surface of a substrate, a body region and a drift region which are arranged in the semiconductor layer, and a source region arranged in the body region, the pair of first side walls are arranged on the surface of the semiconductor layer above the source region; the trench gate is arranged in the semiconductor layer between the pair of first side walls and penetrates through the source region; the gate metal is embedded between the pair of first side walls and is connected with the trench gate; the source region contact groove is formed in the semiconductor layer on one side of the trench gate; the source region contact metal is filled in the source region contact groove and is connected with the source region; the gate metal and the source region contact metal are respectively connected with the metal interconnection layer through conductive contact holes; the collector region layer and the buffer region layer are arranged below the back surface of the substrate, and the collector layer is arranged on the back surface of the substrate. The invention can accelerate the conduction speed, increase the switching frequency, reduce the number of photomasks, eliminate the overlay error, reduce the device area, reduce the short-circuit resistance and improve the device performance.

The invention belongs to the technical field of solar cells, and particularly relates to an HJT solar cell and a preparation method thereof. The HJT solar cell provided by the invention comprises an N-type silicon layer substrate, and a first intrinsic amorphous silicon layer, a hydrogen-doped P-type microcrystalline silicon oxide layer, a P-type doped microcrystalline silicon layer, a first TCO layer and a first collector which are sequentially laminated from inside to outside on one side of the front surface of the N-type silicon layer substrate; and a second intrinsic amorphous silicon layer, a hydrogen-doped N-type microcrystalline silicon oxide layer, an N-type doped microcrystalline silicon layer, a second TCO layer and a second collector are sequentially laminated on one side of the back surface of the N-type silicon layer substrate from inside to outside.

This invention relates to a power semiconductor module assembly, comprising an insulating substrate, an AC power region, a DC positive power region, and a DC negative power region; a first copper-clad layer region is formed in the DC positive power region and a first chip module is disposed thereon; a third copper-clad layer region is formed in the AC power region, and a second chip module is disposed thereon; the power semiconductor module assembly of this invention, through the regular polygonal chip arrangement, enables most of the heat loss of the chips to be diffused and transferred through the interconnect copper layer on the substrate, significantly reducing the thermal coupling link area between chips, which can increase the current density to meet higher power requirements. Compared with conventional structures, under the same chip power loss, its heat dissipation path is better and the heat concentration effect is less likely to occur.

The invention discloses a B-doped graphene porous membrane loaded platinum nanocrystalline electrode material which is used for constructing a fuel cell electrode with ultralow platinum dosage. The graphene is deposited on the aluminum foil by adopting an arc discharge method, has abundant porosity and high graphite degree, and provides an efficient mass transfer channel and excellent corrosion resistance; and platinum nanocrystals are deposited on the basis to serve as a catalyst layer of the fuel cell. The method is easy to operate, the preparation period is short, the platinum cost is relatively low, the production cost of the product is also reduced, and meanwhile, the performance test is carried out in the ultralow platinum fuel cell by utilizing the method, so that the product quality is improved. The result shows higher power density and current density than those of a commercial powder-based Pt / C catalyst and a pure graphene membrane electrode prepared in the same way.

The invention discloses a copper-based catalyst protected by an oxide layer as well as a preparation method and application of the copper-based catalyst. The structure of the copper-based catalyst represents MOy-Cu2O / Cu, MOy is a transition metal oxide nanocluster containing oxygen vacancies, Cu is a copper nanoparticle substrate, MOy is dispersed on the Cu substrate in a coating manner, and Cu2O is distributed at a heterogeneous interface of MOy and Cu nanoparticles; and MOy is an oxide of any one of transition metals of Zn, Ga, Zr and In with oxygen defects. MOy clusters are dispersed on a heterogeneous Cu-Cu < + > substrate, Cu sites in different coordination states form a heterostructure by adopting an atmosphere induction method, the problem of CO2 activation is effectively solved, the generation efficiency of a CO2 electroreduction reaction is enhanced through the synergistic effect of Cu and Cu < + > sites, proton-electron coupling transfer kinetics is accelerated, C-C coupling is promoted, and the CO2 electroreduction reaction efficiency is improved. The high current density can be achieved under the low overpotential, and the Faraday efficiency of the generated multi-carbon product can reach 80% or above.

This invention relates to a stacked high-temperature superconducting cable with transposition joints and non-twisted strips. The stacked high-temperature superconducting cable includes a transposition joint section and a simple stacking section; the transposition joint section and the simple stacking section are connected; the strip includes a bridged portion and a main body connected to the bridged portion; the transposition joint section includes a bridging tape group and the bridged portion of the strip; the simple stacking section includes the main body of two strips; the main body of each strip includes the main body of multiple stacked strips; the main body of the two strips are arranged side by side. Compared with the prior art, this invention achieves the transposition of the strips in the cable through the design of stacked strips and welded transposition joints, solving the problem of inductance imbalance between each strip after winding the coil in a simple stacked cable; secondly, this invention eliminates the need for spiral twisting of the strips or extensive cutting of the superconducting strips in the manufacturing process, making the manufacturing process simple and economically cost-effective.

The present application relates to power semiconductor technology, and particularly relates to a power MOSFET device and a preparation method, which comprises a drain metal, a heavily doped first-conductivity-type semiconductor substrate, a lightly doped second-conductivity-type semiconductor epitaxial layer, a first-conductivity-type semiconductor vertical sinker, a gate dielectric layer, a gate polysilicon electrode, a second-conductivity-type semiconductor body region, a first-conductivity-type semiconductor drift region, a heavily doped first-conductivity-type semiconductor source region, a heavily doped second-conductivity-type semiconductor ohmic contact region, a first insulating dielectric layer, a source metal, a trench structure, a second insulating dielectric layer, and a heavily doped first-conductivity-type polysilicon. The present application has a vertical sinker structure, can change the current path from lateral to vertical, and the transverse and longitudinal voltage resistance structure formed by the drift region and the vertical sinker effectively improves the voltage resistance characteristics of the device. In addition, the structure also has smaller gate parasitic effects and larger current capacity.

The present invention relates to an energy-saving high-strength fence-type composite anode plate for nonferrous metal electrowinning and a preparation method thereof, and belongs to the technical field of nonferrous metallurgy. The composite anode plate of the present invention comprises an aluminum conductive beam, a copper-aluminum composite conductive head is fixedly arranged at the end of the aluminum conductive beam, a fence-type aluminum-based composite anode plate bracket is fixedly arranged at the bottom end of the aluminum conductive beam, and a plurality of horizontal conductive reinforcing ribs are fixedly arranged along the longitudinal direction on the fence-type aluminum-based composite anode plate bracket, and both sides of the fence-type aluminum-based composite anode plate bracket are covered with insulating sheaths, and the two ends of the conductive reinforcing ribs are arranged in the insulating sheaths; the fence-type aluminum-based composite anode plate bracket is composed of a plurality of parallel anode composite rods, and the anode composite rods include aluminum alloy rods, transition layers, lead-bismuth-antimony / rare earth-nano cobalt composite layers, and aluminum-titanium-boron particle surface-coated lead-silver composite coatings from the inside to the outside; wherein the transition layers include zinc layers, copper layers, and lead-tin-rare earth composite layers from the inside to the outside.