Nitride semiconductor device and method for manufacturing same

Abstract

A non-conductive type nitride semiconductor device capable of obtaining an enough current density is provided. An aluminium nitride buffer layer (602), a non-adulteration gallium nitride layer (603), a non-adulteration gallium aluminium nitride layer (604), a first p-type gallium aluminium nitride layer (605), a seond p-type gallium aluminium nitride layer (607), and a high concentration p-type gallium nitride layer (608) are orderly formed on a substrate (601), a gate electrode (611) is ohm contacted with the high concentration p-type gallium nitride layer. A source electrode (609) and a drain electrode (610) are provided on the non-adulteration gallium aluminium nitride layer. A pn knot generated by a two-dimensional electronic air generated on an interface between the non-adulteration gallium aluminium nitride layer and the non-adulteration gallium nitride layer and the first p-type gallium aluminium nitride layer and the second p-type gallium aluminium nitride layer. In addition, the second p-type gallium aluminium nitride layer covers a portion of a silicon nitride film (606).

Description

technical field [0001] The present invention relates to a nitride semiconductor device applicable to a high-power transistor used in a power supply circuit of a household appliance such as a television set. Background technique [0002] In recent years, research on a field effect transistor (FET=Field Effect Transistor) using a gallium nitride (GaN) series material as a high-frequency high-power device has been vigorously carried out. Because nitride semiconductor materials such as gallium nitride can be made into various mixed crystals with aluminum nitride (AlN) or indium nitride (InN), it is different from arsenic series such as gallium arsenide (GaAs) used in the past. Semiconductor materials can also form heterojunctions. However, in a heterojunction formed between nitride semiconductor layers, even in a state where no impurities are doped, a high concentration of carrier. Therefore, field effect transistors made of nitride semiconductors tend to be depleted (normall...

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Problems solved by technology

[0010] However, in order to make the conventional GaN-series electric field effect transistors very non-conductive, it is necessary to reduce the composition ratio of aluminum in the n-type AlGaN layer, or to thin the n-type AlGaN layer to reduce the pole. However, it is difficult to achieve both high current density and a very non-conductive electric field effect transistor at the same time.

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