68 results about "Gallium alloy" patented technology

The invention discloses a manganese dioxide nanoflower loaded copper-gallium electrocatalytic synthesis ammonia material prepared on the basis of gallium-based liquid metal. Manganese dioxide nanoflowers are synthesized through control of reducibility and surface characteristics of liquid metal, copper ions are anchored through electronegativity of manganese dioxide in an aqueous solution, and meanwhile, the copper gallium catalytic material is generated on the surface of manganese dioxide through in-situ reduction by ingeniously and secondarily utilizing the reducibility of the liquid metal. The thickness of the obtained nanoflower sheet layer is 2-20 nm, the copper-gallium alloy is spherical, and the diameter of the copper-gallium alloy is 20-80 nm. The process is safe, simple to operate and suitable for high-flux preparation. The catalytic material can work under various acid-base systems, and under the conditions that the pH is 13, the C (NO3 <->) is 0.1 M and the potential is-0.5 V vs RHE, the ammonia production rate is 4.75 mgNH3 / (mgcat.h), and the Faraday efficiency can reach 99.36%.

The invention provides an electrochemical device and an electronic device, the electrochemical device comprises a positive pole piece, a negative pole piece and a diaphragm, a functional layer is arranged between the positive pole piece and the diaphragm, the functional layer comprises porous aerogel and a phase change heat absorption material, and the heat conductivity coefficient of the porous aerogel is 0.01 W / (m.k)-0.05 W / (m.k). The porous aerogel comprises at least one of silica aerogel, metal oxide aerogel, polymer aerogel and carbon aerogel; the phase change heat absorption material comprises at least one of gallium alloy, indium tin alloy, paraffin, salt hydrate or fatty acid; the thickness of the functional layer is 1-5 [mu] m. Based on the total mass of the functional layer, the total mass percentage of the phase change heat absorption material and the porous aerogel is 80%-98%. The characteristics are met by regulating and controlling the types of the functional layer and the content of each component, and the design of the functional layer can reduce the temperature rise rate of the positive pole piece while improving the heat dissipation performance of the functional layer, so that the thermal stability safety performance and the crushing-resistant safety performance of the electrochemical device are improved.

The invention discloses a detection method of a peep-proof light guide plate and related equipment. The detection method comprises the following steps: writing a self-disappearing phase grid on the surface of a base material through roller coating of a photosensitive phase change coating; on the basis of the phase reference, carrying out same-grid-point superposition processing on a guided-mode resonance spectrum in a laser etching process to obtain dynamic data of the depth and the inclination angle of the microprism; the iron-gallium alloy nano-wire network is used for capturing stress distribution and executing time-space synchronous mapping with a thermal radiation gray field; performing topology persistent coherence dimension reduction modeling on the multi-physics field coupling data to generate a dynamic privacy view field distribution diagram; and performing regional fine adjustment control on the process parameters and triggering a phase grid elimination reaction. According to the scheme, real-time monitoring and accurate control of the whole manufacturing process of the peep-proof light guide plate can be achieved, direct association between technological parameter fluctuation and final optical performance in the microstructure forming process is established, the hysteresis problem of traditional off-line detection is solved, the product yield and performance stability are remarkably improved, and meanwhile material and energy waste is reduced.

The invention belongs to the technical field of semiconductor materials and devices, and discloses a low-temperature thermal evaporation deposition tellurium / germanium heterojunction photoelectric detector and a preparation method thereof. The photoelectric detector comprises a germanium substrate, a tellurium thin film, a metal top electrode and a metal bottom electrode, the tellurium thin film is a polycrystalline tellurium film layer containing a micron-sized large domain, the surface roughness is lower than 1nm, and the tellurium thin film is in close contact with the germanium substrate to form a heterojunction; the metal top electrode is a platinum / gold laminated electrode, and the metal bottom electrode is an indium gallium alloy / copper foil electrode. The tellurium thin film with large crystal domain and low roughness grows on the germanium substrate through a-low temperature (-80 DEG C to-160 DEG C) thermal evaporation deposition process, and the electrode is prepared by combining a micro-nano processing technology. Compared with traditional molecular beam epitaxy, pulse laser deposition and other methods, the method is low in process cost and compatible with the integrated circuit technology, and the obtained heterojunction photoelectric detector has the excellent rectification characteristic and infrared light response and is suitable for large-scale preparation and practical application.

Suspension or colloid comprising liquid metal droplets bound with graphene-based particles, wherein the liquid metal is gallium or a gallium alloy, and the graphene-based particles are selected from a list of graphene, graphene oxide, reduced graphene oxide, graphene quantum dots, carbon nanotubes, or combinations thereof; respective ink, transparent stretchable conductor and obtention processes thereof; also a conductor obtainable by applying a coating of suspension, colloid, network, or ink according to any of the previous claims over a substrate, and laser sintering said coating, in particular the conductor being an electrode or a circuit trace or a circuit. Applications include optoelectronic devices, pressure or strain sensitive piezo resistive composited, pressure or strain sensors, temperature sensors, electroluminescent devices, photovoltaic devices, memory devices or electrodes for energy storage devices.

The present application relates to the technical field of flexible sensing, in particular to a flexible temperature sensor and a preparation method thereof. The flexible temperature sensor provided by the present application comprises a base film, a sensing material electrode embedded in the base film, and a packaging layer. The sensing material electrode is a silver-gallium alloy. The sensing electrode of the flexible temperature sensor provided by the present application is almost completely embedded in the base film, which can be better combined with the base to improve the mechanical properties and measurement stability of the flexible sensor. Meanwhile, the embedded base type flexible temperature sensor has a simple structure and can be prepared in a large area at a low cost.

The invention discloses a sacrificial anode protection device for a ship structure seawater pipe, and relates to the technical field related to material protection, the outer surface of an aluminum gallium alloy anode block is coated with an anti-corrosion coating, the coating of a preset area is scraped, the area where corrosion starts and the range size of the corrosion start can be manually controlled, and the corrosion starting time is shortened. Therefore, in the gradual corrosion and consumption process of the aluminum-gallium alloy anode block, the contact area of the aluminum-gallium alloy anode block and seawater is gradually increased, the protection capability is gradually enhanced, the aluminum-gallium alloy anode block better meets the protection requirement of a seawater structural pipe, and the protection effect is enhanced; and the anti-corrosion coating is easy to self-corrode in the storage process in the marine ship, so that loss is caused, but the anti-corrosion coating can ensure that the anti-corrosion coating cannot be lost in the storage process, so that the maintenance cost is reduced.

The invention relates to the technical field of iron-gallium-based magnetostrictive materials, in particular to a boron-doped iron-gallium alloy magnetostrictive material and a preparation method thereof. The boron-doped iron-gallium alloy magnetostrictive material is obtained by taking a Fe83Ga17 alloy as a matrix, doping B into the matrix and carrying out directional solidification treatment so as to enable crystal grains to grow along a [100] direction, thereby obtaining the boron-doped iron-gallium alloy magnetostrictive material, the chemical expression of the boron-doped iron gallium alloy magnetostrictive material is Fe < 83 > Ga < 17 > B < x >, wherein 1 < = x < = 4. The Fe83Ga17 alloy is used as a matrix, and the growth of crystal grains in the [100] direction is adjusted by controlling the amount of additionally doped B, so that the magnetostriction property and the mechanical property of the magnetostriction material are improved.

A latent heat storage body microcapsule includes a core including gallium or gallium alloy; and a shell covering the core and including gallium oxide. A method for producing the same includes a particle-forming step of forming gallium or an alloy of gallium in a liquid state into particles; a water treatment step of heating the particles in distilled water to form a gallium hydrate on a surface of each of the particles; and an oxidation treatment step of oxidizing the gallium hydrate to form a shell including gallium oxide. The method includes a particle-forming step of forming gallium or an alloy of gallium in a liquid state into particles; a cooling step of cooling the particles to a solid state; and a pH treatment step of immersing the particles in an aqueous solution having a predetermined pH to form a shell including gallium hydrate.

To provide a composition comprising Ga (gallium) or a Ga alloy and aluminum nitride, the composition having excellent flowability.SOLUTION: A composition comprises Ga or a Ga alloy and an aluminum nitride filler, wherein the aluminum nitride filler has an intensity ratio ((PAl-O) / (PAl-N)) of 0.3 or more between a peak (PAl-O) of an Al-O bond and a peak (PAl-N) of an Al-N bond in a spectrum obtained by X-ray photoelectron spectroscopy-X-ray excited Auger electron spectroscopy measurement.SELECTED DRAWING: None

The utility model discloses a reflector assembly capable of avoiding liquid metal pollution, which comprises a reflector, the reflector comprises a cuboid reflector body and L-shaped flanges which protrude from two sides of the reflector body and are bent downwards, and the upper surface of the reflector body is flush with the upper surfaces of the L-shaped flanges to form a mirror surface for reflecting light beams; the cooling modules extend on the two sides of the reflecting mirror in the length direction of the reflecting mirror, and each cooling module comprises a liquid metal groove formed in the top face of the reflecting mirror in the length direction and a water cooling flow channel which is arranged below the liquid metal groove and extends in parallel with the liquid metal groove; wherein the liquid metal groove is filled with indium gallium alloy, and the bottom of the L-shaped flange extends into the liquid metal groove and is immersed in the indium gallium alloy, so that cooling of the reflecting mirror is realized, and meanwhile, pollution of liquid metal to the mirror surface is avoided. According to the utility model, the liquid metal tank and the cooling module are creatively arranged at proper positions far away from the working surface of the reflecting mirror, so that the reflecting mirror is cooled, and the pollution of the liquid metal to the mirror surface is avoided.

The application discloses a method for improving the magnetic entropy change of a prepared alloy through heat treatment, and comprises the following steps: (1) ultrasonic cleaning, ethanol washing and natural drying of nickel particles, manganese particles and gallium particles; (2) repeatedly melting the mixed raw material particles obtained by mixing the nickel particles, the manganese particles and the gallium particles to obtain an alloy ingot; (3) casting the alloy ingot into an alloy rod by using a copper mold suction casting method; (4) polishing, ultrasonic cleaning, ethanol washing and drying of the alloy rod; and (5) performing phased heat treatment on the treated alloy rod in a vacuum environment by using a mode of gradually reducing heat treatment temperature and gradually increasing heat treatment time, and cooling the alloy rod to room temperature in the furnace after the phased heat treatment is completed. The application can solve the technical problems that the magnetic entropy change of the existing nickel-manganese-gallium alloy cannot be effectively improved under high magnetic field intensity.

The application discloses a method for preparing holmium-gallium alloy based on fused salt electrolysis, and a product and application thereof, and comprises the following steps: S1, preparing purified lithium chloride-potassium chloride fused salt; S2, heating the purified eutectic fused salt to an electrolysis temperature and keeping constant temperature, setting liquid metal gallium as a working electrode, setting high-purity graphite rod as a counter electrode, setting Ag / AgCl as a reference electrode, adding holmium chloride into the molten fused salt, and the added mass of the holmium chloride is 2%-4% of the total mass of the fused salt; S3, maintaining the electrolysis temperature unchanged, setting the electrolysis potential and time required by the electrolysis experiment, and ensuring that holmium ions are reduced on the surface of the liquid gallium cathode and alloying reaction occurs during the electrolysis process; S4, after the electrolysis is completed, power is cut off, the electrolysis device is naturally cooled to room temperature, the cathode alloy product is collected after standing and layering, and the holmium-gallium alloy is obtained after washing and drying treatment. The application realizes efficient, stable and controllable preparation of the holmium-gallium alloy.

The invention provides a process window determination method for reducing defects of selective laser melting formed iron-gallium alloy and an iron-gallium alloy sample. The process window determination method comprises the following steps: selecting a primary process window of main process parameters; generating specific experimental parameters according to the main process parameters and other process parameters, and generating an iron-gallium alloy sample according to the specific experimental parameters; counting the porosity and the crack density of the iron-gallium alloy sample; and under the condition that other process parameters are the same, establishing an interaction relationship between the main process parameters and the defects by adopting a response surface method, establishing a defect prediction model, and determining a final process window of the main process parameters according to a prediction result. According to the method, the efficiency of exploring the process window in the selective laser melting process is effectively improved, the manufacturing cost is greatly reduced, and reference is provided for selection of part processes.

The invention relates to a preparation method of a gold-doped iron-gallium alloy magnetostrictive material and the material, in the method, raw materials are smelted to prepare a magnetostrictive ingot, the raw materials meet the following expression: (Fe < 0.83 > Ga < 0.17 >) < 100-x > Aux, x is atomic percent, and x is greater than or equal to 0.2 and less than or equal to 1.0; and the magnetostrictive ingot material is subjected to homogenization treatment, and the gold-doped iron-gallium alloy magnetostrictive material is prepared. The gold element with extremely low solid solubility is added into the FeGa alloy, and a magnetic domain is pinned, so that the magnetostrictive property of the FeGa alloy is kept stable in a service environment higher than room temperature.

The invention provides an alloy negative electrode material applicable to low external pressure, a preparation method and an all-solid-state lithium battery, and relates to the technical field of solid-state lithium batteries. The alloy negative electrode comprises an amorphous lithium-gallium alloy phase and amorphous lithium-silicon alloy particles, wherein the amorphous lithium-silicon alloy particles are dispersed in the amorphous lithium-gallium alloy. The alloy negative electrode is suitable for a solid-state lithium battery with low external pressure (1t, 10MPa) and high surface capacity, and can stably circulate more than 500 circles when being charged and discharged under the conditions of low np ratio and high current density, and lithium dendrites do not grow on the surface of the negative electrode.

There is described an apparatus for determining an information indicative of a porosity of a sample, the apparatus comprising:i) a measurement chamber, configured to accommodate the sample to be measured;ii) an intruding agent reservoir, configured to provide the intruding agent to the measurement chamber;iii) a pressure device, configured to apply a pressure profile to the measurement chamber, so that the intruding agent is pressed into at least part of the pores of the sample; andiv) a determination device, configured to determine the information indicative of the porosity of the sample based on the measured pressure.The intruding agent comprises gallium or a gallium alloy, and the apparatus is configured to provide reducing or inert conditions with respect to the intruding agent.

The invention is applicable to the related field of material preparation, and provides a preparation method of a copper-gallium alloy electrode and application of the copper-gallium alloy electrode in the field of electrocatalyst.The preparation method of the copper-gallium alloy electrode comprises the following steps that 1, foamy copper and gallium-indium liquid alloy are immersed in an aqueous solution of sodium hydroxide and make contact with each other; 2, direct current is introduced into a system composed of the foamy copper, the gallium-indium liquid alloy and the sodium hydroxide aqueous solution; step 3, performing ultrasonic treatment on the foamy copper obtained in the step 2; 4, the foamy copper obtained in the step 3 is treated for a certain time under the constant potential; according to the method, foamy copper and gallium-indium liquid alloy are used as raw materials, and a layer of compact copper-gallium alloy is formed on the surface of the foamy copper in an infiltration reaction-physical removal-electrochemical removal mode; the copper-gallium alloy electrode prepared by the method has excellent nitrate electro-catalysis reduction performance, and the ammonia yield reaches 10mg / h.

A thermal conductive silicone composition includes: 100 parts by mass of organopolysiloxane having kinematic viscosity at 25° C. of 10 to 500,000 mm2 / s; 10 to 2,000 parts by mass of thermal conductive filler having an average particle diameter of 0.01 to 100 μm; 1,000 to 20,000 parts by mass of gallium or a gallium alloy having a melting point of −20 to 100° C.; and 0.1 to 100 parts by mass of an alkoxysilane compound being represented by the formula R1aR2bSi(OR3)4-a-b wherein R1 independently represents an alkyl group having 6 to 20 carbon atoms, R2 independently represents an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms, R3 independently represents an alkyl group having 1 to 6 carbon atoms, “a” represents an integer of 1 to 3, “b” represents an integer of 0 to 2, and a sum of a+b is an integer of 1 to 3.

The application is suitable for the field of material preparation, and provides a copper-gallium alloy electrode preparation method and application in the field of electrocatalysis.The copper-gallium alloy electrode preparation method comprises the following steps: step 1: immersing foamed copper and gallium-indium liquid alloy into an aqueous solution of sodium hydroxide, and keeping the two in contact; step 2: introducing direct current into the system composed of foamed copper, gallium-indium liquid alloy and aqueous solution of sodium hydroxide; step 3: ultrasonicating the foamed copper obtained in step 2; and step 4: treating the foamed copper obtained in step 3 at a constant potential for a certain time.The application forms a dense copper-gallium alloy layer on the surface of foamed copper by means of infiltration reaction-physical removal-electrochemical removal, using foamed copper and gallium-indium liquid alloy as raw materials.The copper-gallium alloy electrode prepared by the application has excellent electrocatalytic nitrate reduction performance, and the ammonia yield reaches 10 mg / h.

Provided is a curable organopolysiloxane composition containing a thermally conductive material that is uniformly dispersed in the state of fine particles in a matrix comprised of a resin component, where the composition can then be turned into a cured product exhibiting no cracks or voids when the product is cured. The composition contains (A) an organopolysiloxane having at least two silicon atom-bonded alkenyl groups per each molecule, said organopolysiloxane being liquid at 25° C., (B) an organohydrogenpolysiloxane having a silicon atom-bonded hydrogen atom, (C) gallium and / or a gallium alloy having a melting point of −20 to 70° C., (D) a thermally conductive filler having an average particle diameter of 0.1 to 30 m, and (E) a platinum group metal catalyst, wherein the gallium and / or the gallium alloy (C) is in the form of particles dispersed in the organopolysiloxane and exhibits a solidifying point of −40° C. or lower.

The application provides a preparation method of a copper-gallium target material, comprising the following steps: taking high-purity copper blocks and high-purity gallium as raw materials to perform vacuum smelting, the content of gallium in the raw materials is 35-55 wt.%, after the smelting is completed, the copper-gallium alloy is obtained by casting into a mold and cooling; the temperature of the vacuum smelting is 800-900 DEG C; the copper-gallium alloy is sprayed to prepare powder, and the copper-gallium alloy powder is obtained; the copper-gallium alloy powder is subjected to hot isostatic pressing and cooling, and the copper-gallium target material is obtained. The copper-gallium target material with high density and good uniformity of components is prepared by the following steps: first, a high-gallium copper-gallium alloy is prepared by using a vacuum casting method, then, alloy powder is prepared by using a gas spraying method, and finally, the copper-gallium target material is prepared by hot isostatic pressing sintering and annealing.

The invention relates to a preparation method of a platinum-tungsten-gallium alloy. Platinum-tungsten-gallium alloy plates, bars and wires are successfully prepared through the processes of electric arc melting, vacuum suction casting, hot rolling, cold drawing and the like. The platinum-tungsten-gallium alloy is high in hardness, bright in surface and non-stick to a cutter during turning, and is an excellent platinum jewelry material.

A method may include providing a fluid material, solidifying the fluid material, providing a substrate, and depositing the solidified fluid material on the substrate. Providing the fluid material may include providing a mold, and filling the mold with the fluid material. Solidifying the fluid material may include solidifying the fluid material in a mold, and removing the solidified fluid material from the mold. Providing the substrate may include preparing the substrate for deposition of the solidified fluid material, and adjusting the temperature of the substrate. Depositing the solidified fluid material on the substrate may include fixturing the substrate, and loading the solidified fluid material in a deposition tool. The fluid material may include a liquid phase component, and a solid phase component. The solid phase component may include particles suspended in the liquid phase component. The liquid phase component may include a gallium alloy.

A latent heat storage body microcapsule includes a core including gallium or gallium alloy; and a shell covering the core and including gallium oxide. A method for producing the same includes a particle-forming step of forming gallium or an alloy of gallium in a liquid state into particles; a water treatment step of heating the particles in distilled water to form a gallium hydrate on a surface of each of the particles; and an oxidation treatment step of oxidizing the gallium hydrate to form a shell including gallium oxide. The method includes a particle-forming step of forming gallium or an alloy of gallium in a liquid state into particles; a cooling step of cooling the particles to a solid state; and a pH treatment step of immersing the particles in an aqueous solution having a predetermined pH to form a shell including gallium hydrate.

The invention relates to a method for preparing a copper-gallium alloy film layer through an electro-deposition method, and belongs to the technical field of copper-gallium alloy film layers. The method comprises the following steps: adding metal gallium into a sodium hydroxide solution, and carrying out ultrasonic treatment to completely react and dissolve the metal gallium into the sodium hydroxide solution to obtain an alkaline gallium ion electrolyte; a copper sheet serves as a working electrode, a platinum sheet serves as a counter electrode, electro-deposition is conducted for 0.5-12 h in an alkaline gallium ion electrolyte through a constant-current charging method at the room temperature, and the copper-gallium alloy film layer is prepared on the surface of the working electrode through in-situ deposition. According to the method, the copper-gallium alloy film CuGa2 is prepared in the alkaline sodium hydroxide solution through one-step electro-deposition alloying with the metal gallium as the raw material, oxidation of the metal gallium can be effectively avoided, a high-temperature environment is not needed, the thickness of the alloy film is easy to control, the process is simple and easy to operate, and the synthesis rate is high.

The invention is applicable to the related field of material preparation, and provides a preparation method and application of a copper-gallium alloy electrocatalyst, and the preparation method of the copper-gallium alloy electrocatalyst comprises the following steps: step 1, immersing a pretreated carbon nanotube in an N, N-dimethylformamide solution of copper chloride; 2, the gallium-indium liquid alloy is subjected to ultrasonic dispersion in an N, N-dimethylformamide solution; and 3, mixing the solutions obtained in the step 1 and the step 2, continuously performing ultrasonic treatment, and centrifuging, washing and drying the obtained product to obtain a finished product. According to the preparation method, copper ions and a gallium-indium liquid alloy are taken as raw materials, and a nanoscale copper-gallium alloy intermetallic compound is prepared by a couple replacement method and is anchored on a carbon nanotube in situ; due to the synergistic effect between atoms, the copper-gallium alloy can effectively activate nitric oxide on the surface, and the adsorption energy and the speed-step energy barrier of the copper-gallium alloy to the nitric oxide are reduced, so that the copper-gallium alloy is endowed with excellent NORR catalytic activity.

The application discloses a low-melting-point alloy etching enhanced polishing tool and a preparation method thereof. The polishing tool is composed of a low-melting-point gallium alloy, fine abrasive grains and a pore agent. The gallium alloy is a binder phase of the polishing tool and also an etching phase material of a processed material. The gallium alloy used is a series of gallium alloys containing gallium and indium, and the melting point of the gallium alloy is 30 DEG C to 250 DEG C. During polishing processing, the low-melting-point alloy in the tool etches the processed material, and the etching effect and the abrasive grain cutting effect are combined to realize high-efficiency and high-quality processing. The shape of the tool is determined according to the requirements of a processed part. The application is used for polishing and grinding processing of glass, aluminum and other metals, alloys and metal compounds which are easily etched by gallium, and waste liquid is not generated during the processing, so that high-efficiency and high-quality grinding and polishing processing can be realized.

To provide a composition containing gallium (Ga) or a gallium alloy and a thermally conductive ceramic filler that exhibits excellent operability and workability. [Solution] A composition comprising (A) Ga or a Ga alloy, (B) a thermally conductive ceramic filler, and (C) a metal powder having a melting point of 900°C or higher.

Provided is a thermally conductive composition having excellent thermal conductivity and excellent workability. The present invention is a composition containing the following components: (A) 100 parts by mass of gallium and / or an alloy thereof having a melting point of-20 to 100 DEG C; and (B) 2-150 parts by mass of a metal oxide and / or a metal nitride having an average particle diameter of 0.01-200 [mu] m relative to 100 parts by mass of component (A). Wherein the total content of the component (A) and the component (B) in the composition is 95-100 mass%. The gallium alloy of the component (A) in the thermally conductive composition is one or more types selected from the group consisting of a Ga-In alloy, a Ga-Sn-Zn alloy, a Ga-In-Sn alloy, and a Ga-In-Bi-Sn alloy.