39 results about "Gallium alloy" patented technology

The invention discloses a detection method of a peep-proof light guide plate and related equipment. The detection method comprises the following steps: writing a self-disappearing phase grid on the surface of a base material through roller coating of a photosensitive phase change coating; on the basis of the phase reference, carrying out same-grid-point superposition processing on a guided-mode resonance spectrum in a laser etching process to obtain dynamic data of the depth and the inclination angle of the microprism; the iron-gallium alloy nano-wire network is used for capturing stress distribution and executing time-space synchronous mapping with a thermal radiation gray field; performing topology persistent coherence dimension reduction modeling on the multi-physics field coupling data to generate a dynamic privacy view field distribution diagram; and performing regional fine adjustment control on the process parameters and triggering a phase grid elimination reaction. According to the scheme, real-time monitoring and accurate control of the whole manufacturing process of the peep-proof light guide plate can be achieved, direct association between technological parameter fluctuation and final optical performance in the microstructure forming process is established, the hysteresis problem of traditional off-line detection is solved, the product yield and performance stability are remarkably improved, and meanwhile material and energy waste is reduced.

The invention belongs to the technical field of semiconductor materials and devices, and discloses a low-temperature thermal evaporation deposition tellurium / germanium heterojunction photoelectric detector and a preparation method thereof. The photoelectric detector comprises a germanium substrate, a tellurium thin film, a metal top electrode and a metal bottom electrode, the tellurium thin film is a polycrystalline tellurium film layer containing a micron-sized large domain, the surface roughness is lower than 1nm, and the tellurium thin film is in close contact with the germanium substrate to form a heterojunction; the metal top electrode is a platinum / gold laminated electrode, and the metal bottom electrode is an indium gallium alloy / copper foil electrode. The tellurium thin film with large crystal domain and low roughness grows on the germanium substrate through a-low temperature (-80 DEG C to-160 DEG C) thermal evaporation deposition process, and the electrode is prepared by combining a micro-nano processing technology. Compared with traditional molecular beam epitaxy, pulse laser deposition and other methods, the method is low in process cost and compatible with the integrated circuit technology, and the obtained heterojunction photoelectric detector has the excellent rectification characteristic and infrared light response and is suitable for large-scale preparation and practical application.

Suspension or colloid comprising liquid metal droplets bound with graphene-based particles, wherein the liquid metal is gallium or a gallium alloy, and the graphene-based particles are selected from a list of graphene, graphene oxide, reduced graphene oxide, graphene quantum dots, carbon nanotubes, or combinations thereof; respective ink, transparent stretchable conductor and obtention processes thereof; also a conductor obtainable by applying a coating of suspension, colloid, network, or ink according to any of the previous claims over a substrate, and laser sintering said coating, in particular the conductor being an electrode or a circuit trace or a circuit. Applications include optoelectronic devices, pressure or strain sensitive piezo resistive composited, pressure or strain sensors, temperature sensors, electroluminescent devices, photovoltaic devices, memory devices or electrodes for energy storage devices.

The present application relates to the technical field of flexible sensing, in particular to a flexible temperature sensor and a preparation method thereof. The flexible temperature sensor provided by the present application comprises a base film, a sensing material electrode embedded in the base film, and a packaging layer. The sensing material electrode is a silver-gallium alloy. The sensing electrode of the flexible temperature sensor provided by the present application is almost completely embedded in the base film, which can be better combined with the base to improve the mechanical properties and measurement stability of the flexible sensor. Meanwhile, the embedded base type flexible temperature sensor has a simple structure and can be prepared in a large area at a low cost.

The invention relates to the technical field of iron-gallium-based magnetostrictive materials, in particular to a boron-doped iron-gallium alloy magnetostrictive material and a preparation method thereof. The boron-doped iron-gallium alloy magnetostrictive material is obtained by taking a Fe83Ga17 alloy as a matrix, doping B into the matrix and carrying out directional solidification treatment so as to enable crystal grains to grow along a [100] direction, thereby obtaining the boron-doped iron-gallium alloy magnetostrictive material, the chemical expression of the boron-doped iron gallium alloy magnetostrictive material is Fe < 83 > Ga < 17 > B < x >, wherein 1 < = x < = 4. The Fe83Ga17 alloy is used as a matrix, and the growth of crystal grains in the [100] direction is adjusted by controlling the amount of additionally doped B, so that the magnetostriction property and the mechanical property of the magnetostriction material are improved.

A latent heat storage body microcapsule includes a core including gallium or gallium alloy; and a shell covering the core and including gallium oxide. A method for producing the same includes a particle-forming step of forming gallium or an alloy of gallium in a liquid state into particles; a water treatment step of heating the particles in distilled water to form a gallium hydrate on a surface of each of the particles; and an oxidation treatment step of oxidizing the gallium hydrate to form a shell including gallium oxide. The method includes a particle-forming step of forming gallium or an alloy of gallium in a liquid state into particles; a cooling step of cooling the particles to a solid state; and a pH treatment step of immersing the particles in an aqueous solution having a predetermined pH to form a shell including gallium hydrate.

To provide a composition comprising Ga (gallium) or a Ga alloy and aluminum nitride, the composition having excellent flowability.SOLUTION: A composition comprises Ga or a Ga alloy and an aluminum nitride filler, wherein the aluminum nitride filler has an intensity ratio ((PAl-O) / (PAl-N)) of 0.3 or more between a peak (PAl-O) of an Al-O bond and a peak (PAl-N) of an Al-N bond in a spectrum obtained by X-ray photoelectron spectroscopy-X-ray excited Auger electron spectroscopy measurement.SELECTED DRAWING: None

The application discloses a method for improving the magnetic entropy change of a prepared alloy through heat treatment, and comprises the following steps: (1) ultrasonic cleaning, ethanol washing and natural drying of nickel particles, manganese particles and gallium particles; (2) repeatedly melting the mixed raw material particles obtained by mixing the nickel particles, the manganese particles and the gallium particles to obtain an alloy ingot; (3) casting the alloy ingot into an alloy rod by using a copper mold suction casting method; (4) polishing, ultrasonic cleaning, ethanol washing and drying of the alloy rod; and (5) performing phased heat treatment on the treated alloy rod in a vacuum environment by using a mode of gradually reducing heat treatment temperature and gradually increasing heat treatment time, and cooling the alloy rod to room temperature in the furnace after the phased heat treatment is completed. The application can solve the technical problems that the magnetic entropy change of the existing nickel-manganese-gallium alloy cannot be effectively improved under high magnetic field intensity.

The application discloses a method for preparing holmium-gallium alloy based on fused salt electrolysis, and a product and application thereof, and comprises the following steps: S1, preparing purified lithium chloride-potassium chloride fused salt; S2, heating the purified eutectic fused salt to an electrolysis temperature and keeping constant temperature, setting liquid metal gallium as a working electrode, setting high-purity graphite rod as a counter electrode, setting Ag / AgCl as a reference electrode, adding holmium chloride into the molten fused salt, and the added mass of the holmium chloride is 2%-4% of the total mass of the fused salt; S3, maintaining the electrolysis temperature unchanged, setting the electrolysis potential and time required by the electrolysis experiment, and ensuring that holmium ions are reduced on the surface of the liquid gallium cathode and alloying reaction occurs during the electrolysis process; S4, after the electrolysis is completed, power is cut off, the electrolysis device is naturally cooled to room temperature, the cathode alloy product is collected after standing and layering, and the holmium-gallium alloy is obtained after washing and drying treatment. The application realizes efficient, stable and controllable preparation of the holmium-gallium alloy.

The invention relates to a preparation method of a gold-doped iron-gallium alloy magnetostrictive material and the material, in the method, raw materials are smelted to prepare a magnetostrictive ingot, the raw materials meet the following expression: (Fe < 0.83 > Ga < 0.17 >) < 100-x > Aux, x is atomic percent, and x is greater than or equal to 0.2 and less than or equal to 1.0; and the magnetostrictive ingot material is subjected to homogenization treatment, and the gold-doped iron-gallium alloy magnetostrictive material is prepared. The gold element with extremely low solid solubility is added into the FeGa alloy, and a magnetic domain is pinned, so that the magnetostrictive property of the FeGa alloy is kept stable in a service environment higher than room temperature.

The invention provides an alloy negative electrode material applicable to low external pressure, a preparation method and an all-solid-state lithium battery, and relates to the technical field of solid-state lithium batteries. The alloy negative electrode comprises an amorphous lithium-gallium alloy phase and amorphous lithium-silicon alloy particles, wherein the amorphous lithium-silicon alloy particles are dispersed in the amorphous lithium-gallium alloy. The alloy negative electrode is suitable for a solid-state lithium battery with low external pressure (1t, 10MPa) and high surface capacity, and can stably circulate more than 500 circles when being charged and discharged under the conditions of low np ratio and high current density, and lithium dendrites do not grow on the surface of the negative electrode.

The application is suitable for the field of material preparation, and provides a copper-gallium alloy electrode preparation method and application in the field of electrocatalysis.The copper-gallium alloy electrode preparation method comprises the following steps: step 1: immersing foamed copper and gallium-indium liquid alloy into an aqueous solution of sodium hydroxide, and keeping the two in contact; step 2: introducing direct current into the system composed of foamed copper, gallium-indium liquid alloy and aqueous solution of sodium hydroxide; step 3: ultrasonicating the foamed copper obtained in step 2; and step 4: treating the foamed copper obtained in step 3 at a constant potential for a certain time.The application forms a dense copper-gallium alloy layer on the surface of foamed copper by means of infiltration reaction-physical removal-electrochemical removal, using foamed copper and gallium-indium liquid alloy as raw materials.The copper-gallium alloy electrode prepared by the application has excellent electrocatalytic nitrate reduction performance, and the ammonia yield reaches 10 mg / h.

Provided is a curable organopolysiloxane composition containing a thermally conductive material that is uniformly dispersed in the state of fine particles in a matrix comprised of a resin component, where the composition can then be turned into a cured product exhibiting no cracks or voids when the product is cured. The composition contains (A) an organopolysiloxane having at least two silicon atom-bonded alkenyl groups per each molecule, said organopolysiloxane being liquid at 25° C., (B) an organohydrogenpolysiloxane having a silicon atom-bonded hydrogen atom, (C) gallium and / or a gallium alloy having a melting point of −20 to 70° C., (D) a thermally conductive filler having an average particle diameter of 0.1 to 30 m, and (E) a platinum group metal catalyst, wherein the gallium and / or the gallium alloy (C) is in the form of particles dispersed in the organopolysiloxane and exhibits a solidifying point of −40° C. or lower.

The application provides a preparation method of a copper-gallium target material, comprising the following steps: taking high-purity copper blocks and high-purity gallium as raw materials to perform vacuum smelting, the content of gallium in the raw materials is 35-55 wt.%, after the smelting is completed, the copper-gallium alloy is obtained by casting into a mold and cooling; the temperature of the vacuum smelting is 800-900 DEG C; the copper-gallium alloy is sprayed to prepare powder, and the copper-gallium alloy powder is obtained; the copper-gallium alloy powder is subjected to hot isostatic pressing and cooling, and the copper-gallium target material is obtained. The copper-gallium target material with high density and good uniformity of components is prepared by the following steps: first, a high-gallium copper-gallium alloy is prepared by using a vacuum casting method, then, alloy powder is prepared by using a gas spraying method, and finally, the copper-gallium target material is prepared by hot isostatic pressing sintering and annealing.

The invention relates to a preparation method of a platinum-tungsten-gallium alloy. Platinum-tungsten-gallium alloy plates, bars and wires are successfully prepared through the processes of electric arc melting, vacuum suction casting, hot rolling, cold drawing and the like. The platinum-tungsten-gallium alloy is high in hardness, bright in surface and non-stick to a cutter during turning, and is an excellent platinum jewelry material.

A latent heat storage body microcapsule includes a core including gallium or gallium alloy; and a shell covering the core and including gallium oxide. A method for producing the same includes a particle-forming step of forming gallium or an alloy of gallium in a liquid state into particles; a water treatment step of heating the particles in distilled water to form a gallium hydrate on a surface of each of the particles; and an oxidation treatment step of oxidizing the gallium hydrate to form a shell including gallium oxide. The method includes a particle-forming step of forming gallium or an alloy of gallium in a liquid state into particles; a cooling step of cooling the particles to a solid state; and a pH treatment step of immersing the particles in an aqueous solution having a predetermined pH to form a shell including gallium hydrate.

The application discloses a low-melting-point alloy etching enhanced polishing tool and a preparation method thereof. The polishing tool is composed of a low-melting-point gallium alloy, fine abrasive grains and a pore agent. The gallium alloy is a binder phase of the polishing tool and also an etching phase material of a processed material. The gallium alloy used is a series of gallium alloys containing gallium and indium, and the melting point of the gallium alloy is 30 DEG C to 250 DEG C. During polishing processing, the low-melting-point alloy in the tool etches the processed material, and the etching effect and the abrasive grain cutting effect are combined to realize high-efficiency and high-quality processing. The shape of the tool is determined according to the requirements of a processed part. The application is used for polishing and grinding processing of glass, aluminum and other metals, alloys and metal compounds which are easily etched by gallium, and waste liquid is not generated during the processing, so that high-efficiency and high-quality grinding and polishing processing can be realized.

To provide a composition containing gallium (Ga) or a gallium alloy and a thermally conductive ceramic filler that exhibits excellent operability and workability. [Solution] A composition comprising (A) Ga or a Ga alloy, (B) a thermally conductive ceramic filler, and (C) a metal powder having a melting point of 900°C or higher.

Provided is a thermally conductive composition having excellent thermal conductivity and excellent workability. The present invention is a composition containing the following components: (A) 100 parts by mass of gallium and / or an alloy thereof having a melting point of-20 to 100 DEG C; and (B) 2-150 parts by mass of a metal oxide and / or a metal nitride having an average particle diameter of 0.01-200 [mu] m relative to 100 parts by mass of component (A). Wherein the total content of the component (A) and the component (B) in the composition is 95-100 mass%. The gallium alloy of the component (A) in the thermally conductive composition is one or more types selected from the group consisting of a Ga-In alloy, a Ga-Sn-Zn alloy, a Ga-In-Sn alloy, and a Ga-In-Bi-Sn alloy.

The invention provides a zinc negative electrode, a preparation method and application thereof, and a zinc air battery. The method comprises the following steps: adding a zinc salt and an indium salt into a sodium citrate solution to obtain an electrolyte; the substrate is placed in the electrolyte and serves as a cathode, meanwhile, the anode is placed in the electrolyte, electro-deposition is carried out, zinc-indium alloy or zinc-gallium alloy is formed on the surface of the substrate, and the alloy composite electrode is obtained; different from a traditional technical scheme of inhibiting dendritic crystals by a simple surface modification layer, the method disclosed by the invention enhances and stabilizes deposition / stripping behaviors by improving the internal stability of the zinc-based electrode and introducing a microalloy interface layer, and relatively high binding energy on the surface of the electrode can guide ordered growth of zinc, so that dendritic crystal formation is inhibited at an early stage; the zinc-indium alloy composite electrode realizes uniform distribution among metals, is different from surface modification, and can prolong the service life of the electrode more lastingly; the electro-deposition process is carried out in a water system, metal ions can be recycled, and the green and environment-friendly development concept is compounded.

The application discloses a kind of fire material evidence transportation violence sorting and high temperature early warning flexible material preparation method, belong to judicial material evidence circulation field and logistics transportation field, comprising: step 1: indium-gallium alloy liquid metal is added to container, pour into ethanol aqueous solution, fully stir, drop into dopamine hydrochloride solution, adjust pH value to 7.5~9.0, stir at room temperature;Dropping into acetone settlement to reaction liquid, centrifugal, filtration, filter cake is washed after stirring with acetone and natural drying, obtain polydopamine coated liquid metal;Step 2: take (4-vinylphenyl) dimethyl silane, acrylic acid ester group p-benzoic acid, 1-vinyl-3-butyl imidazole hexafluorophosphate, dissolved in dichloromethane to make solution, add photoinitiator Irgacure-2959, add polydopamine coated liquid metal, material is fully stirred after pouring into polytetrafluoroethylene mold, under 650W ultraviolet lamp, light initiation polymerization, solvent is dried to constant weight, obtain fire material evidence transportation violence sorting and high temperature early warning flexible material.

The invention relates to a thermal interface material which at least comprises a low-melting-point gallium alloy, sulfydryl-containing silicone oil, an emulsifying compound, at least one polymer, heat-conducting powder and a coupling compound. The present invention relates to thermal interface materials that can be used to transfer heat away from electronic components. Specifically, the present invention relates to a liquid metal thermal interface material comprising a relatively high weight percent of a low melting point metal alloy, which can be used to transfer heat away from an electronic component.

This invention belongs to the field of catalyst preparation technology, and provides a cobalt-gallium alloy catalyst for the hydrodeoxygenation of guaiacol to cyclohexanol, its preparation method, and its application. The preparation method includes the following steps: First, a mixed metal salt solution of cobalt and gallium sources is prepared, then carbon nanotubes are added, and the mixture is ultrasonically dispersed and refluxed. After the reaction, the catalyst is dried and reduced to obtain the catalyst CoGa / CNTs. Then, the CoGa / CNTs are mixed with an organophosphoric acid ligand solution and reacted at room temperature to obtain the organophosphonic acid ligand-modified carbon nanotube supported cobalt-gallium alloy catalyst R-PA@CoGa / CNTs. Applying the prepared catalyst R-PA@CoGa / CNTs to the hydrodeoxygenation of guaiacol to cyclohexanol achieves excellent guaiacol yield under milder reaction conditions and with a lower active metal content.

The invention discloses a dry recovery method for waste indium-gallium targets, which comprises the following steps of: crushing the waste indium-gallium targets to obtain waste target particles; the waste target particles and a carbonaceous reducing agent are mixed and added into a reduction furnace to be subjected to a carbon thermal reduction reaction, liquid indium gallium alloy is obtained, then a sodium hydroxide solution is added to be stirred and precipitated, then solid-liquid separation is conducted, a sodium gallate solution and indium-rich metal are obtained, the indium-rich metal is subjected to electrolytic refining, and high-purity refined indium is obtained; the sodium gallate solution is subjected to acidification, impurity removal and hydrolytic precipitation, and gallium hydroxide powder is obtained. The indium-gallium alloy is directly obtained through the carbon thermal reduction reaction, so that metal loss caused by multi-step leaching, separation, replacement and other processes in a wet process is avoided, and the recovery rate is increased; a large amount of strong acid, strong base and organic extractant are not needed, the auxiliary material consumption is small, the price is low, wastewater discharge is reduced, and the recovery cost is reduced; liquid indium gallium alloy passes through the liquid outlet in the bottom of the reduction furnace, full-continuous or semi-continuous batch production is achieved, and the recovery efficiency is high.

The invention discloses a tin-doped gallium nitride homojunction, a preparation method of the tin-doped gallium nitride homojunction and application of the tin-doped gallium nitride homojunction in beta-ray detection, and belongs to the technical field of semiconductor film materials. According to the method, the gallium oxide thin film is formed on the substrate through blade coating of the liquid gallium, then the tin-doped gallium oxide thin film is formed on the substrate through blade coating of the liquid tin-gallium alloy, and finally the tin-doped gallium nitride homojunction is obtained through nitriding treatment. The preparation process is simple, expensive equipment is not needed, the cost is low, when the prepared homojunction is used for a beta-ray detector, through electrode deposition and device packaging, the dark current can be remarkably reduced, the detection sensitivity to low-energy beta rays is improved, the response is rapid, the recovery time is short, the anti-radiation capability is high, the stability is excellent, stable work under the normal temperature condition can be achieved, and the application range is wide. And the application range is expanded.

The invention discloses a preparation method of a gallium-rich alloy material based on liquid metal surface segregation, gallium-rich alloy particles are obtained through a physical mixing-high-temperature alloying-electrochemical separation technology, and the method comprises the steps that active metal powder and liquid metal gallium are mixed and react at high temperature to form a solid alloy phase; and then the internal alloy is controllably driven to be segregated outwards rapidly through an electrochemical means, and separation of a solid alloy phase and a liquid gallium phase is achieved. The alloy obtained through separation is an alloy phase rich in gallium and is in a granular shape, and gallium and active metal elements are evenly distributed on particles. The method is simple in process, high in process controllability and applicable to preparation and separation of various gallium-rich active alloys.

The invention discloses a method for improving magnetic entropy change of a prepared alloy through heat treatment. The method comprises the steps that (1) nickel particles, manganese particles and gallium particles are washed with absolute ethyl alcohol after being subjected to ultrasonic cleaning and naturally aired; (2) mixed raw material particles obtained by mixing nickel particles, manganese particles and gallium particles are repeatedly smelted, and an alloy ingot is obtained; (3) casting the alloy ingot by adopting a copper mold suction casting method to obtain an alloy bar; (4) the alloy bar is ground, ultrasonically cleaned, washed with absolute ethyl alcohol and dried; and (5) the treated alloy bar is subjected to staged heat treatment in the vacuum environment in the mode that the heat treatment temperature is gradually reduced, and the heat treatment time is gradually prolonged, and after staged heat treatment is finished, the alloy bar is cooled to the room temperature along with the furnace. The technical problem that the magnetic entropy change of an existing nickel-manganese-gallium alloy cannot be effectively improved under the high magnetic field intensity can be solved.

A thermal conductive silicone composition includes (A) 100 parts by mass of an organopolysiloxane having a kinematic viscosity at 25° C. of 10 to 500,000 mm2 / s; (B) 10 to 2,000 parts by mass of a thermal conductive filler having an average particle size of 0.01 to 100 μm; and (C) 1,000 to 10,000 parts by mass of gallium or a gallium alloy having a melting point of −20 to 100° C. The resulting thermal conductive silicone composition has excellent thermal conduction property.

The present disclosure provides a solid-state battery with high cycle characteristics. In the solid-state battery of the present disclosure, a positive electrode current collector layer, a positive electrode active material layer, a solid electrolyte layer, a negative electrode active material layer, and a negative electrode current collector layer are laminated in this order. The negative electrode active material layer of the solid-state battery of the present disclosure comprises a gallium-based layer containing gallium or lithium-gallium alloy, and a magnesium-based layer containing magnesium or lithium-magnesium alloy. The gallium-based layer is arranged on the side of the solid electrolyte layer, and the magnesium-based layer is arranged on the side of the negative electrolyte layer.

To provide a thermally conductive silicone composition containing a low melting point metal, which has excellent adhesion to a base material after curing and becomes a cured product having good thermal conductivity.SOLUTION: (B) an organohydrogenpolysiloxane, (C) gallium and / or gallium alloys having melting points of - 20 to 70 °C., (D-1) a thermally conductive filler having a mean particle size of 20 to 200 μ m, (D-2) a thermally conductive filler having a mean particle size of 0.1 to 10 μ m, (E) a platinum group metal catalyst, (F) a reaction-controlling agent, and (G) a palladium powder. 000mm2, (H) an organopolysiloxane capped at one end of the molecular chain with a hydrolyzable group and having a dynamic viscosity at 25 °C of 10 to 10 000mm2 / s.SELECTED DRAWING: None