635 results about "Electronegativity" patented technology

A method for maximizing the interfacial properties of magnetoresistive sensors, such as spin valve and GMR sensors used in storage devices, comprises selecting the materials for ferromagnetic layers and for electrically conductive spacers that are interposed between the ferromagnetic layers. The electronegativities of the selected materials are substantially matched so that an absolute value of the differences in electronegativities is minimized. The conductive spacer material provides a relatively low resistivity and a large mean free path. The sensors experience greater chemical and thermal stability, are corrosion resistant, and realize an increased signal output.

A method forms a gate stack for a semiconductor device with a desired work function of the gate electrode. The work function is adjusted by changing the overall electronegativity of the gate electrode material in the region that determines the work function of the gate electrode during the gate electrode deposition. The gate stack is deposited by an atomic layer deposition type process and the overall electronegativity of the gate electrode is tuned by introducing at least one pulse of an additional precursor to selected deposition cycles of the gate electrode. The tuning of the work function of the gate electrode can be done not only by introducing additional material into the gate electrode, but also by utilizing the effects of a graded mode deposition and thickness variations of the lower gate part of the gate electrode in combination with the effects that the incorporation of the additional material pulses offers.

The present invention provides a metal stack structure that stabilizes the flatband voltage and threshold voltages of material stacks that include a Si-containing conductor and a Hf-based dielectric. This present invention stabilizes the flatband voltages and the threshold voltages by introducing a rare earth metal-containing layer into the material stack that introduces, via electronegativity differences, a shift in the threshold voltage to the desired voltage. Specifically, the present invention provides a metal stack comprising:a hafnium-based dielectric; a rare earth metal-containing layer located atop of, or within, said hafnium-based dielectric; an electrically conductive capping layer located above said hafnium-based dielectric; and a Si-containing conductor.

The invention relates to a compound chemical blocking removing agent of an oil field polymer injection well. The compound chemical blocking removing agent is characterized in that a high molecular extending agent with strong electronegativity is used for hydrating and extending condensed and agglomerated polymer macromolecule chains again; peroxide is used as a primary oxidation agent; polybasic carboxylic acid which can slowly and uniformly ionize hydrogen ions is used as controlled-release acid; auxiliary agents such as a corrosion inhibitor, a penetrant, a metal ion chelating agent, a dual-metal coupling agent, an iron ion stabilizer, a bacteriacide, a stratum protective agent, and the like are added at the same time; and macromolecular polymers in blocking substances, which are near the oil field polymer injection well, and are fully extended by the extending agent, are oxidized and degraded by active hydroxyl which is produced from the reaction of the primary oxidation agent and the controlled-release acid, so that blocking of the polymer injection well is removed, and the apparent water injectivity index is improved. The chemical blocking removing agent is non-toxic and environment-friendly, has a wide applicable range of temperature and water quality, and has the advantages of simplicity in construction technique, safety and convenience in use and storage, and the like; and the viscosity-reducing rate of the compound chemical blocking removing agent to polyacrylamide gel can reach above 99%.

The present invention provides a metal stack (or gate stack) structure that stabilizes the flatband voltage and threshold voltages of material stacks that include a gate conductor and a dielectric material having a dielectric constant of greater than about 4.0, especially a Hf-based dielectric. This present invention stabilizes the flatband voltages and the threshold voltages by introducing an alkaline earth metal-containing layer into the material stack that introduces, via electronegativity differences, a shift in the threshold voltage to the desired voltage. Specifically, the present invention provides a metal stack comprising a high k dielectric, preferably a hafnium-based dielectric; an alkaline earth metal-containing layer located atop of, or within, said high k dielectric; an electrically conductive capping layer located above said high k dielectric; and a gate conductor.

The present invention provides a metal stack structure that stabilizes the flatband voltage and threshold voltages of material stacks that include a Si-containing conductor and a Hf-based dielectric. This present invention stabilizes the flatband voltages and the threshold voltages by introducing a rare earth metal-containing layer into the material stack that introduces, via electronegativity differences, a shift in the threshold voltage to the desired voltage. Specifically, the present invention provides a metal stack comprising a hafnium-based dielectric; a rare earth metal-containing layer located atop of, or within, said hafnium-based dielectric; an electrically conductive capping layer located above said hafnium-based dielectric; and a Si-containing conductor.

Disclosed is a MOS transistor including a multi-work function metal nitride gate electrode. The MOS transistor comprises a semiconductor substrate and a central gate electrode formed on the semiconductor substrate. The central gate electrode is formed of a metal nitride layer. A source side gate electrode and a drain side gate electrode are formed on respective opposite sidewalls of the central gate electrode. The source and drain side gate electrodes are composed of doped metal nitride containing first impurities having an electronegativity less than that of nitrogen or second impurities having an electronegativity greater than that of nitrogen.

A method for making nanoparticles includes the steps of dipping a metal element in a solution that contains metallic ions or ions with a metal, wherein the metal element has a lower electronegativity or redox potential than that of the metal in the ions, and rubbing the metal element to make nanoparticles. Another method for making nanoparticles includes the steps of dipping a metal element in a solution that contains metallic ions or ions with a metal, wherein the metal element has a lower electronegativity or redox potential than that of the metal in the ions, and applying sonic energy to at least one of the metal element and solution. A further method for making copper nanoparticles includes the step of adding ascorbic acid to a copper salt solution.

Provided is a single crystal with a hexagonal wurtzite structure which is useful as a substrate for various devices and has high purity and is uniform. The single crystal with a hexagonal wurtzite structures which is obtained by a crystal growth on at least an m-plane of a columnar seed crystal and represented by AX (A representing an electropositive element and X representing an electronegative element) is characterized in that a variation in the concentration of a metal other than the electropositive element A and having a concentration of 0.1 to 50 ppm is within 100%.

The invention relates to a nitrogen-sulfur double-doped carbon material difunctional oxygen catalyst, a preparation method thereof and electrocatalysis application of alkaline medium in oxygen. In the catalyst, ocean polysaccharide sodium alginate is used as a carbon source, thiourea is sources of nitrogen and sulfur atoms, and double doping is performed on N and S which have electronegativity by high-temperature calcination in an inertia atmosphere to obtain a nitrogen-sulfur double-doped carbon material electrocatalyst. Since a double-doped crystal structure of heteroatoms is changed, the specific area and the catalyst site of the catalyst are improved, meanwhile, relatively high oxygen evolution (OER) and oxygen reduction (ORR) catalytic activity are achieved, and the overoptential of OER and ORR is effectively reduced; the ORR process is most divided to four electron catalytic mechanisms and is an relatively ideal ORR reaction process, and the catalyst has favorable stability and excellent methyl alcohol resistance; and the used raw material is low in cost, the preparation method is simple and is easy to operate, and mass production is facilitated.

A display unit capable of inhibiting moisture and gas from penetrating into a liquid crystal layer and an alignment layer also after formation of a display electrode and suppressing decomposition of a material forming the display electrode is obtained. In this display unit, an impurity-introduced layer containing an impurity element having high electronegativity is formed on the surface of an insulator film and the surface of the display electrode after formation of the display electrode. Thus, the insulator film and the display electrode are improved in effects of preventing transmission of moisture and gas also after formation of the display electrode. The impurity-introduced layer formed on the surface of the display electrode stabilizes the surface of an ITO film forming the display electrode, thereby suppressing decomposition of the ITO film.

Scintillation materials of this invention have an alkali halide host material, a (first) scintillation dopant of various types, and a variety of second dopants (co-dopants). In another embodiment, the scintillation materials of this invention have an alkali halide host material, a (first) scintillation dopant of various types, a variety of second dopants (co-dopants), and a variety of third dopants (co-dopants). Co-dopants of this invention are capable of providing a second auxiliary luminescent cation dopant, capable of introducing an anion size and electronegativity mismatch, capable of introducing a mismatch of anion charge, or introducing a mismatch of cation charge in the host material.

The invention provides a preparation method of a silicon dioxide aerogel, which comprises the following steps: regulating the pH value of a silicasol to 4-10 with reducing acid, adding ethanol, heating, and keeping the temperature to obtain a wet gel; mixing the wet gel with ethyl orthosilicate and ethanol to carry out aging; and finally, mixing with a drying-control chemical additive, and drying to obtain the silicon dioxide aerogel. In the aging process, the active hydroxy groups and ethyl orthosilicate on the wet gel surface and the region with weak network skeleton structure react to reinforce the silicon-oxygen bridge bond and enhance the networking degree and strength of the gel skeleton, thereby reducing the shrinkage and cracking phenomena in the drying process. Atoms with large electronegativity and small radius in the drying-control chemical additive and SiOH on the colloidal particle surface form a hydrogen bond, thereby generating a wide shielding network on the periphery; polycondensation is also generated in the system under the action of the hydrogen bond, thereby reducing the polycondensation speed; and many branched chains are increased in the skeleton network structure formation process, thereby promoting the formation of large and uniform nanopores.

In a Li ion conductivity oxide solid electrolyte containing lithium, lanthanum, and zirconium, a part of oxygen is substituted by an element M (M=N, Cl, S, Se, or Te) having smaller electronegativity than oxygen.

An electronegativity membrane-method haze-removing agent and an environment atmosphere haze-removing method. The electronegativity membrane-method haze-removing agent is mainly composed of 20-80% by mass of an electronegativity membrane-forming agent and 20-80% by mass of a foaming agent. The components are mixed uniformly to obtain the electronegativity membrane-method haze-removing agent which is in the form of a powder or a paste. The invention also includes the environment atmosphere haze-removing method through the electronegativity membrane-method haze-removing agent. The electronegativity membrane-method haze-removing agent is wide in raw material sources and is simple in process. The haze-removing method is simple. The electronegativity membrane-method haze-removing agent is high-efficient and economical in application. The invention provides a simple and feasible technology method for eliminating gas pollution, especially for eliminating environment atmosphere dust and haze pollution.

A method and formulation are provided for the treatment of medical conditions associated with the formation and / or deposition of macromolecular aggregates, particularly those associated with adverse ocular conditions. The formulation contains a non-cytotoxic chelating agent containing at least three negatively charged chelating atoms and a charge-masking agent containing at least one polar group and having a molecular weight of less than about 250, wherein the polar group contains at least one and preferably at least two heteroatoms having a Pauling electronegativity greater than about 3.00, and further wherein the molar ratio of the charge-masking agent to the chelating agent is sufficient to ensure that substantially all negatively charged chelating atoms are associated with a heteroatom on the charge-masking agent.

The invention provides lead-free sodium potassium niobate antimonate piezoelectric ceramic composition. The composition is lead-free piezoelectric ceramic solid solution formed by introducing high electronegativity Sb part into the B position of alkali metal niobate ferroelectrics (Na1-xKx) NbO3 with ABO3 type perofskite structure to replace Nb. The lead-free piezoelectric ceramic composition has the advantages that the piezoelectric performance is excellent, the Curie temperature is high, the thermostability of the piezoelectric performance is good, the preparation technique is stable, the composition is obtained by adopting tradition piezoelectric ceramics, the sintering temperature is low, and the compactness is good.

The present invention relates to a hydrogen storage composition prepared in accordance with a method comprising: (a) combining (i) a metalliferous material selected from the group consisting of: (A) metal or a metalloid, or an alloy thereof, or a compound thereof, or an homogeneous or an inhomogeneous combination of at least two of a metal or a metalloid, or an alloy thereof, or a compound thereof, or (B) a hydride of any of: a metal or a metalloid, or alloy thereof, or a compound thereof, or an homogeneous or an inhomogeneous combination of a metal or a metalloid, or an alloy thereof, or a compound thereof, with ii) a liquid consisting essentially of any of: water, at least one alcohol, or a mixture of water and at least one alcohol, to form a first intermediate; and (b) milling the first intermediate for form an hydrogen transfer facilitator; (c) combining the hydrogen transfer facilitator with a second metalliferous material selected from the group consisting of: (A) a metal or a metalloid, or an alloy thereof, or a compound thereof, or an homogeneous or inhomogeneous combination of at least two of a metal or a metalloid, or an alloy thereof, or a compound thereof, or (B) a hydride of any of: a metal or a metalloid, or an alloy thereof, or a compound thereof, or an homogeneous or inhomogeneous combination of at least two of a metal or a metalloid, or an alloy thereof, or a compound thereof, such combining effecting sufficient contact between the hydrogen transfer facilitator and the second metalliferous material so that the hydrogen transfer facilitator is configured to effect absorption or desorption of hydrogen by the second metalliferous material.

The invention discloses a water treatment method for removing Tl<+> and / or Cd2<+> by producing nanometer iron and manganese oxides in situ, relating to a water treatment method of thallium and / or cadmium-containing source water and solving the problems of complex process, high running cost and low removing efficiency of thallium and / or cadmium existing in the conventional water treatment technology specific to thallium and / or cadmium-polluted source water. The method comprises the following steps of: adding permanganate and ferrous salt into Tl<+> and / or Cd2<+>-containing water; stirring to obtain a mixed solution; adding a coagulant; and performing conventional water treatment. A nanometer ferric hydroxide-manganese dioxide oxide composite adsorbent which has a large specific surface area and high electronegativity and is easy for precipitation separation is produced in situ by making permanganate react with the ferrous salt, so that Tl<+> and / or Cd2<+> can be removed effectively andspecifications in the national Sanitary Standard for Drinking Water are met. The method has the advantages of high removing efficiency, simple process, flexibility and convenience for operation, no change of the original treatment process of a water plant, low running cost and the like, and can be applied to emergency treatment of a water pollution event.

The invention discloses a preparation method of an S / C composite material used in a positive pole of a Li-S battery. The S / C composite material is formed by compositing a carbon carrier and elemental sulfur. The preparation method includes following steps: (A) pre-treating the carbon carrier with an acid; and (B) supporting the elemental sulfur onto the carbon carrier as a carrier at a high temperature to obtain the S / C composite material. In the preparation method, by means of electronegativity of oxygen-containing groups (such as a carboxyl group, a carbonyl group, a hydroxyl group and the like) being rich in the carbon carrier pre-treated by the acid and a large specific surface area, effective immobilization of a sulfur active substance is achieved, thereby more effectively inhibiting loss of the active substances during charging / discharging of a positive pole material. The circulation stability and rate capability of an electrode can be greatly improved, thereby obtaining the high-performance S / C composite positive pole material.

The invention discloses a quantum dot solid film and a preparation method thereof. The method comprises carrying out surface modification or ligand exchange on quantum dots through ligands of which hydrophilic ends have electronegatability to obtain quantum dots with the electronegative ligands, dispersing the quantum dots with the electronegative ligands in water, carrying out uniform stirring to obtain a quantum dot solution, putting an electrode plate in the quantum dot solution, and depositing the quantum dots on the electrode plate through an electrophoretic deposition method to obtain a quantum dot solid film. Through surface modification or ligand exchange of the quantum dots and deposition of the quantum dot solid film based on an electrophoretic deposition method, the problem that a spin-coating method cannot produce a flat quantum dot solid film with a large area is solved. The preparation method is simple, has a low cost and is suitable for low-cost large-scale preparation.

The invention relates to a lanthanum-ferrite-doping formaldehyde gas sensitive material and a preparation method thereof, which belong to the formaldehyde gas sensitive material and the preparation method. The material of the invention comprises raw materials such as lanthanum nitrate, ferric nitrate, citric acid, dispersing agents, metal ions with the similar electronegativity and the ion diameter to iron ions or metal ions with the similar electronegativity and ion diameter to lanthanum ions and the like according to the mol ratio of 1 / 1 / (0.05 to 1.5) / (0.001 to 0.1) / (0.1 to 0.5). The preparation method comprises the steps of solution mixing, microwave reaction, gel drying, grinding and the like. Thereby, the formaldehyde gas sensitive material with the advantages of high sensitivity, good selectivity and high response-recovery time is obtained.

The present invention provides a metal stack structure that stabilizes the flatband voltage and threshold voltages of material stacks that include a Si-containing conductor and a Hf-based dielectric. This present invention stabilizes the flatband voltages and the threshold voltages by introducing a rare earth metal-containing layer into the material stack that introduces, via electronegativity differences, a shift in the threshold voltage to the desired voltage. Specifically, the present invention provides a metal stack comprising a hafnium-based dielectric; a rare earth metal-containing layer located atop of, or within, said hafnium-based dielectric; an electrically conductive capping layer located above said hafnium-based dielectric; and a Si-containing conductor.

A thin film can be formed on a substrate at a low temperature with a practicable film-forming rate. There is provided a semiconductor device manufacturing method for forming an oxide or nitride film on a substrate. The method comprises: exposing the substrate to a source gas; exposing the substrate to a modification gas comprising an oxidizing gas or a nitriding gas, wherein an atom has electronegativity different from that of another atom in molecules of the oxidizing gas or the nitriding gas; and exposing the substrate to a catalyst. The catalyst has acid dissociation constant pKa in a range from 5 to 7, but a pyridine is not used as the catalyst.

A magnetic recording medium for high-density recording, having a doped interlayer to preserve the uniformity and ordering of the magnetic nanoparticles in its recording layer. The interlayer is doped with a high electronegativity material. The dopant atoms in the interlayer interact with the ferromagnetic nanoparticles to promote the formation of a homogeneous, ordered monolayer of nanoparticles in the recording layer. In addition, the high electronegative property of the dopant atoms holds the nanoparticles in place during the subsequent annealing process to prevent sintering and disordering damage. In one embodiment, the dopant is a halogen or non-halogen material having a high electronegativity, which is not polymerized to the matrix material in the interlayer. The matrix material may be polymerized. An example of a doped interlayer is a fluorinated carbon film.

The invention relates to a production method of a superhydrophobic antifog glass and belongs to the technical field of materials. The superhydrophobic antifog glass is produced with hydrophobic nano silica particles; the surface of a glass material is coated with a layer of hydrophobic nano silica particles, so that surface wet state of the glass material is improved, small waterdrops formed of condensed vapor slip off under their gravity action, the surface pollutants are easily brought away by the waterdrops, and good self-cleaning effect is achieved. Trimethoxy(1H,1H,2H,2H-heptadecafluorodecyl)silane and 3-aminopropyltriethoxysilane are added herein to produce superhydrophobic antifog glass; since a superhydrophobic coating on the antifog glass contains F and Si atoms; F is an element of greatest electronegativity in the periodic table of elements, has very small atom radius and forms a very short F-Si bond having great bond energy; the surrounding of carbon chains of a fluorine atom polymer is in tight arrangement, so that the fluorine-bearing polymer has excellent weatherability, surface self-cleaning property, high temperature resistance, chemicals resistance and the like.

A p-type semiconductor includes a host material 100 which is a semiconductor, an acceptor element 110 and a localized band formation element 120. Here, the acceptor element 110 is doped to the host material 100 and has fewer valence electrons than valance electrons of at least one of the elements which compose the host material 100; the localized band formation element 120 is doped to the host material 100, is isovalent with at least one of the elements which compose the host material 100 and has smaller electronegativity than the electronegativity of the element(s), and forms the localized band which activates holes of an acceptor level.

The invention provides a preparation method of a polyvinylidene fluoride porous membrane with a diversity charging surface. The preparation method is characterized by comprising the following steps of step 1, cleaning and airing a polyvinylidene fluoride membrane, preprocessing the polyvinylidene fluoride membrane in a low-temperature plasma instrument, and oxidizing the preprocessed polyvinylidene fluoride membrane in air; step 2, soaking the oxidized polyvinylidene fluoride membrane in an acroleic acid water solution and carrying out surface grafting polyreaction to obtain a polyacrylic acid surface modified PVDF (Polyvinylidene Fluoride) membrane; and step 3, cleaning the polyacrylic acid surface modified PVDF membrane, adsorbing and cleaning the modified PVDF membrane in a polyanion electrolyte solution, a polycation electrolyte solution or a zwitterion lycine polymer solution so as to obtain the polyvinylidene fluoride porous membrane with a charging surface the outermost surface of which has electronegativity, electropositivity or electric neutrality. The prepared polyvinylidene fluoride separation membrane with the diversity charging surface provided by the invention achieves the good anti-pollution property.

Disclosed herein is a solid-state imaging device including: a semiconductor substrate; a sensor of impurity diffusion layer formed on the surface layer of said semiconductor substrate; a negative charge accumulation layer formed on said sensor from an insulating material containing a first metallic substance; and an interfacial layer formed between said sensor and said negative charge accumulation layer from an insulating material containing a second metallic substance having greater electronegativity than said first metallic substance.

The problem of the present invention is to provide an electrode body excellent in cycling characteristics, which restrains interface resistance from increasing with time. The present invention solves the above-mentioned problem by providing an electrode body comprising: an electrode active material comprising an oxide, a first solid electrolyte material comprising a sulfide, and a second solid electrolyte material disposed at an interface between the electrode active material and the first solid electrolyte material, wherein a difference between electronegativity of a skeleton element in the second solid electrolyte material and electronegativity of an oxygen element is smaller than a difference between electronegativity of a skeleton element bonded to a sulfur element in the first solid electrolyte material and electronegativity of an oxygen element.