This application relates to the field of
semiconductor technology. Embodiments of this application provide a surge
negative charge driving circuit and a
switching power converter for suppressing
crosstalk, comprising: a driving module and a surge
negative charge module; a first terminal of the driving module receives an input
signal, and a second terminal of the driving module is connected to the gate node of a
silicon carbide MOSFET, used to control the turn-on and turn-off of the
silicon carbide MOSFET according to the input
signal; a first terminal of the surge
negative charge module receives the input
signal, a second terminal of the surge negative charge module is connected to a power supply terminal, a third terminal of the surge negative charge module is connected to a ground terminal, and a fourth terminal of the surge negative charge module is connected to the gate node of the
silicon carbide MOSFET, used to release negative charge to the gate node during the turn-off process of the
silicon carbide MOSFET when the drain
voltage of the
silicon carbide MOSFET rises, causing Miller current to flow back to the gate node, in order to neutralize the Miller current. Highly efficient
crosstalk suppression is achieved through the physical method of charge
neutralization, without relying on a continuous
negative voltage power supply, simplifying the
system architecture and reducing costs.