Apparatus to treat a substrate and method thereof

Abstract

An apparatus to treat a substrate including a vacuum chamber having a plasma space where plasma is generated and a treating space where a substrate is treated, an extract electrode disposed between the plasma space and the treating space, a power supply to provide power to the extract electrode, and a controller to control the power supply so that a cation beam and a negative charge beam are alternately extracted from a plasma in the plasma space to the treating space.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application claims the priority of Korean Patent Application No. 2005-0090693, filed on Sep. 28, 2005, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present general inventive concept relates to an apparatus to treat a substrate and a method of treating the substrate, and more particularly, to an apparatus to treat a substrate and a method of treating a substrate which uses a cation beam and a negatively charged beam alternately extracted from a plasma. [0004] 2. Description of the Related Art [0005] A semiconductor wafer or a substrate for display devices (hereinafter, referred as a substrate) is manufactured by performing processes of repeatedly depositing and etching thin films on the substrate. Generally, a process of etching an insulating layer can be performed with an ion beam extracted from a plas...

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Benefits of technology

[0040] The foregoing and/or other aspects and utilities of the present general inventive concept may also be achieved by providing a plasma etching apparatus to treat a substrate, comprising a chamber to supply a plasma, an extract electrode provided in the chamber, including a first grid layer, a second gr

Problems solved by technology

However, a current path is not formed in the insulating layer, so that electric charges of the incident ion beam become charged up in the insulating layer.

Then, the electric charges destroy the insulation and damage the substrate, causing a defective etching known as undercut.

However, these conventional methods have the following problems.

Further, the collision is generated from the circumference of the cation beam to the center thereof, so that the cation beam may not properly be neutralized in the center.

Second, in the conventional method of neut

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