221 results about "Neutral particle" patented technology

The present invention relates to an apparatus for treating the surface with neutral particle beams comprising an antenna container, a plasma generating part, a neutral particle beam generating part and a treating part, wherein the antenna container comprises antennas connected to high frequency electric power supply through which high frequency electric power supplies, the plasma generating part transfers gases from a gas injector into plasmas with the supplied power, the neutral particle beam generating part reverts the obtained plasmas to neutral particle beams via the collision thereof with metal plates, and the treating part treats the surface of a target with the neutral particle beams.

A neutral particle beam processing apparatus comprises a workpiece holder (20) for holding a workpiece (X), a plasma generator for generating a plasma in a vacuum chamber (3), an orifice electrode (5) disposed between the workpiece holder (20) and the plasma generator, and a grid electrode (4) disposed upstream of the orifice electrode (5) in the vacuum chamber (3). The orifice electrode (5) has orifices (5a) defined therein. The neutral particle beam processing apparatus further comprises a voltage applying unit for applying a voltage between the orifice electrode (5) and the grid electrode (4) via a dielectric (5b) to extract positive ions from the plasma generated by the plasma generator and pass the extracted positive ions through the orifices (5a) in the orifice electrode (5).

In an EUV light source apparatus, a collector mirror is protected from debris damaging a mirror coating. The EUV light source apparatus includes: a chamber in which extreme ultraviolet light is generated; a target supply unit for supplying a target material into the chamber; a plasma generation laser unit for irradiating the target material within the chamber with a plasma generation laser beam to generate plasma; an ionization laser unit for irradiating neutral particles produced at plasma generation with an ionization laser beam to convert the neutral particles into ions; a collector mirror for collecting the extreme ultraviolet light radiated from the plasma; and a magnetic field or electric field forming unit for forming a magnetic field or an electric field within the chamber so as to trap the ions.

Methods and apparatus for plasma implantation of a workpiece, such as a semiconductor wafer, are provided. A method includes introducing into a plasma doping chamber a dopant gas selected from the group consisting of PF₃, AsF₃, AsF₅ and mixtures thereof, forming in the plasma doping chamber a plasma containing ions of the dopant gas, the plasma having a plasma sheath at or near a surface of the workpiece, and accelerating the dopant gas ions across the plasma sheath toward the workpiece, wherein the dopant gas ions are implanted into the workpiece. The selected dopant gas limits deposition of neutral particles on the workpiece.

A system for analyzing one or more ion species of a sample including a first ion mobility filter associated with a first flow path for passing first ions of the sample, a second ion mobility filter associated with a second flow path for passing second ions of the sample, a first outlet from the first flow path for passing a portion of the first ions from the first flow path to the second flow path, and a first outlet from the second flow path for removing neutral particles from the second flow path where the first outlet from the second flow path is upstream of the second ion mobility filter in relation to the ion flow in the second flow path.

An ion implanter includes an ion source for generating an ion beam, an analyzer for separating unwanted components from the ion beam, a first beam transport device for transporting the ion beam through the analyzer at a first transport energy, a first deceleration stage positioned downstream of the analyzer for decelerating the ion beam from the first transport energy to a second transport energy, a beam filter positioned downstream of the first deceleration stage for separating neutral particles from the ion beam, a second beam transport device for transporting the ion beam through the beam filter at the second transport energy, a second deceleration stage positioned downstream of the beam filter for decelerating the ion beam from the second transport energy to a final energy, and a target site for supporting a target for ion implantation. The ion beam is delivered to the target site at the final energy. In a double deceleration mode, the second transport energy is greater than the final energy for highest current at low energy. In an enhanced drift mode, the second transport energy is equal to the final energy for highest beam purity at low energy.

The invention discloses a crosslinking hyper branched polymer composite nanofiltration membrane as well as the preparation method thereof. The crosslinking hyper branched polymer composite nanofiltration membrane is prepared by taking an ultrafiltration membrane as a basement membrane and crosslinking hyper branched polymer as a selecting layer through hyper branched polymer and the interfacial polymerization of polybasic acid, polybasic acyl chloride, polybasic anhydride and polybasic amine; and the interfacial polymerization takes the mixed solution of water and ethanol as the water phase and n-hexane, n-heptane or n-octane as the organic phase. As the hyper branched polymer has the spheroidal structure, a plurality of nano-voids exist in the interior of the molecule, so as to enable the selecting layer of the crosslinking hyper branched polymer composite nanofiltration membrane to be looser, and leads the nanofiltration membrane to maintain high flux and retention rate under the lower operating pressure. The nanofiltration membrane can be used in the fields of medicament, foodstuff, environmental protection, etc. The composite nanofiltration membrane is applicable to the separation and the condensation of high valence ions, low valence ions, neutral particles, drugs, food additives, etc.

An improved electron multiplier bias network that limits the response of the multiplier when the multiplier is faced with very large input signals, but then permits the multiplier to recover quickly following the large input signal. In one aspect, this invention provides an electron multiplier, having a cathode that emits electrons in response to receiving a particle, wherein the particle is one of a charged particle, a neutral particle, or a photon; an ordered chain of dynodes wherein each dynode receives electrons from a preceding dynode and emits a larger number of electrons to be received by the next dynode in the chain, wherein the first dynode of the ordered chain of dynodes receives electrons emitted by the cathode; an anode that collects the electrons emitted by the last dynode of the ordered chain of dynodes; a biasing system that biases each dynode of the ordered chain of dynodes to a specific potential; a set of charge reservoirs, wherein each charge reservoir of the set of charge reservoirs is connected with one of the dynodes of the ordered chain of dynodes; and an isolating element placed between one of the dynodes and its corresponding charge reservoir, where the isolating element is configured to control the response of the electron multiplier when the multiplier receives a large input signal, so as to permit the multiplier to enter into and exit from saturation in a controlled and rapid manner.

Charged and neutral particles, photons (13), photonic optics, detectors (15) and sensor arrays are used for application to molecular imaging, communication with biological organisms and monitoring and learning biological activity inside living organisms. The living organisms include among others living tissue, biological organs, cells (10), eukaryotes, prokaryotes, viruses and phages. Molecular imaging can be an effective new tool to understand the mechanisms of life and communicate, modify and control it. Techniques, methods and devices are described to achieve these aims. The probes used in molecular imaging described above will include the full spectrum of photons; charged and uncharged particles (13); chemicals; and biological probes.

In an extreme ultra violet light source apparatus that exhausts debris including fast ions and neutral particles by the effect of a magnetic field, neutral particles emitted from plasma are efficiently ionized. The extreme ultraviolet light source apparatus includes: a plasma generating unit that generates plasma, that radiates at least extreme ultra violet light, through pulse operation; collective optics that collects the extreme ultra violet light radiated from the plasma; a microwave generating unit that radiates microwave through pulse operation into a space in which a magnetic field is formed to cause electron cyclotron resonance, and thereby ionizes neutral particles emitted from the plasma; a magnetic field forming unit that forms the magnetic field and a magnetic field for trapping at least ionized particles; and a control unit that synchronously controls at least the plasma generating unit and the microwave generating unit.

Provided is a plasma ion source mass spectrometer with an ion deflector lens having an improved removal ratio of photons and neutral particles as compared with the conventional art while an ion transmittance is maintained. The ion deflector includes an input side plate-like electrode, an output side plate-like electrode, and a tubular electrode disposed between the input side plate-like electrode and the output side plate-like electrode. The tubular electrode is of a point asymmetrical configuration. The tubular electrode is arranged so that a center axis of the tubular electrode is closer to an axis of travel of ions upstream of the input side plate-like electrode than an axis of travel of ions downstream of the output side plate-like electrode.

A ferroelectric or electret memory circuit, particularly a ferroelectric or electret memory circuit with improved fatigue resistance, including a ferroelectric or electret memory cell with a polymer or oligomer memory material contacting first and second electrodes, at least one of the electrodes is comprised of at least one functional material capable of physical and/or chemical bulk incorporation of atomic or molecular species contained in either the electrode or the memory material and displaying a propensity for migrating in the form of mobile charged and/or neutral particles between an electrode and a memory material, something which can be detrimental to both. A functional material with the above-mentioned properties shall serve to offset any adverse effect of a migration of this kind, leading to an improvement in the fatigue resistance of the memory cell. The memory circuit being used in a matrix-addressable memory device where the memory cells are formed in distinct portions in a global layer of a ferroelectric or electret thin-film memory material, particularly a polymer material.

An ion implantation system having a dose cup located near a final energy bend of a scanned or ribbon-like ion beam of a serial ion implanter for providing an accurate ion current measurement associated with the dose of a workpiece or wafer. The system comprises an ion implanter having an ion beam source for producing a ribbon-like ion beam. The system further comprises an AEF system configured to filter an energy of the ribbon-like ion beam by bending the beam at a final energy bend. The AEF system further comprises an AEF dose cup associated with the AEF system and configured to measure ion beam current, the cup located substantially immediately following the final energy bend. An end station downstream of the AEF system is defined by a chamber wherein a workpiece is secured in place for movement relative to the ribbon-like ion beam for implantation of ions therein. The AEF dose cup is beneficially located up stream of the end station near the final energy bend mitigating pressure variations due to outgassing from implantation operations at the workpiece. Thus, the system provides accurate ion current measurement before such gases can produce substantial quantities of neutral particles in the ion beam, generally without the need for pressure compensation. Such dosimetry measurements may also be used to affect scan velocity to ensure uniform closed loop dose control in the presence of beam current changes from the ion source and outgassing from the workpiece.

An etching apparatus comprises a workpiece holder (21) for holding a workpiece (X), a plasma generator (10, 20) for generating a plasma (30) in a vacuum chamber (3), an orifice electrode (4) disposed between the workpiece holder (21) and the plasma generator (10, 20), and a grid electrode (5) disposed upstream of the orifice electrode (4) in the vacuum chamber (3). The orifice electrode (4) has orifices (4a) defined therein. The etching apparatus further comprises a voltage applying unit (25, 26) for applying a voltage between the orifice electrode (4) and the grid electrode (5) to accelerate ions from the plasma (30) generated by the plasma generator (10, 20) and to pass the extracted ions through the orifices (4a) in the orifice electrode (4), for generating a collimated neutral particle beam having an energy ranging from 10 eV to 50 eV.

The present invent provides a particle detector for counting and measuring the flight time of secondary electrons and scattered ions and neutrals and to correlate coincidences between these and backscattered ions/and neutrals while maintaining a continuous unpulsed microfocused primary ion beam for impinging a surface. Intensities of the primary particle scattering and secondary particle emissions are correlated with the position of impact of the focused beam onto a materials surface so that a spatially resolved surface elemental and electronic structural mapping is obtained by scanning the focused beam across the surface.

The invention relates to the technical field of plasma etching, deposition, and neutral particle etching equipment, and particularly relates to a gas-homogenizing structure applicable to plasma or neutral particle etching systems. The gas-homogenizing structure is disposed at the lower part of a gas inlet pipe of a vacuum cavity; the gas-homogenizing structure comprises a gas-homogenizing cylinder; the gas-homogenizing cylinder adopts a double-layer cylindric structure of an inner gas-homogenizing cylinder and an outer gas-homogenizing cylinder which have coaxial centers and rotate mutually; the bottom of the gas-homogenizing cylinder is closed; gas-homogenizing holes are disposed on the inner gas-homogenizing cylinder and the outer gas-homogenizing cylinder. Under a plasma striking condition, the gas-homogenizing cylinder and a gas-homogenizing disc of the invention are in a sealed state; the increase of the gas density facilitates gas ionization and gas striking, can increase the striking speed; after striking, by rotating the upper and lower layers of the inner and the outer gas-homogenizing cylinders of the gas-homogenizing cylinder and the gas-homogenizing disc, the gas-homogenizing holes are exposed; plasma passes through the gas-homogenizing holes with gas flow and etches a chip; and the uniformity of the gas on the chip surface is improved.

A technique for improved ion implantation is provided. The technique is embodied as an electrostatic filter for an ion implantation device. The electrostatic filter is located just prior to deceleration and may be integrated with a decelerator. Electrodes are used to generate an electric field to separate neutrals from ions. Also, the filter may include active cooling to reduce background gas pressure, a precursor to neutral particle formation. Electrode geometry may also inhibit high energy neutrals from contaminating the target substrate.

There are provided a plasma etching method and a plasma etching apparatus capable of independently controlling distributions of line widths and heights of lines in a surface of a wafer. The plasma etching method for performing a plasma etching on a substrate W by irradiating plasma containing charged particles and neutral particles to the substrate W includes controlling a distribution of reaction amounts between the substrate W and the neutral particles in a surface of the substrate W by adjusting a temperature distribution in the surface of the substrate W supported by a support 105, and controlling a distribution of irradiation amounts of the charged particles in the surface of the substrate W by adjusting a gap between the substrate W supported by the support 105 and an electrode 120 provided so as to face the support 105.

The invention belongs to the technical field of mass spectrographies, and relates to an ion transmission system for an inductively coupled plasma mass spectrometry. The ion transmission system comprises an ion sampling cone, an interception cone, an extraction lens, an ion deflecting electrode and ion focusing lenses, wherein the centers of all the parts are on coaxial horizontal lines; space electric field distribution is generated under a DC voltage; ions deflect, focus and are transmitted under the action of the electric field; photons and neutral particles in a sample are free from the action of the electric field, transmitted linearly, and blocked while meeting the ion deflecting electrode; electrified ions are guided by the electric field, bypass the ion deflecting electrode, and focus into an ion beam under the action of the electric field of the focusing lenses, and then are transmitted to a mass analyzer. The ion transmission system has the advantages that the structure is simple; the use is convenient; interference signals generated due to the entering of the photons and the neutral particles can be removed effectively; the ion transmission efficiency and the sensitivity of the inductively coupled plasma mass spectrometry are improved.

A mass filter for an ion beam system includes at least two stages and reduces chromatic aberration. One embodiment includes two symmetrical mass filter stages, the combination of which reduces or eliminates chromatic aberration, and entrance and exit fringing field errors. Embodiments can also prevent neutral particles from reaching the sample surface and avoid crossovers in the beam path. In one embodiment, the filter can pass a single species of ion from a source that produces multiple species. In other embodiments, the filter can pass a single ion species with a range of energies and focus the multi-energetic ions at the same point on the substrate surface.