This invention discloses a
simulation method for the change in grain roundness during the growth of ternary
cathode materials, belonging to the technical field of ternary
cathode materials. The
simulation method includes: S1, acquiring SEM images at different initial moments of isothermal temperatures and using them as the initial state of a
cellular automaton; S2, calculating the
grain growth rate and determining the
grain growth distance at each moment, and determining the
cell orientation transition moment by comparing it with the
cell edge length; S3, calculating the
grain boundary energy difference before and after the
cell orientation transition to determine the cell orientation transition; S4, further transformation for convex and concave cells; S5, designing
cell state transition rules based on
grain growth rate, local
grain boundary curvature, and the minimum energy principle to establish a two-dimensional
cellular automaton model to simulate the change in grain roundness during grain growth. The
simulation method proposed in this invention successfully and comprehensively simulates the roundness change during grain growth.