A 
capacitor memory is realized, wherein a 
capacitor stores data and a 
diode controls to store data “1” or “0”. 
Diode has four terminals wherein first terminal serves as word line, second terminal serves as storage node, third terminal is floating, and fourth terminal serves as 
bit line, wherein 
back channel effect is suppressed adding additional ions in the bottom side of third terminal or applying 
negative voltage in the well or substrate. A 
capacitor plate couples to second terminal, which plate has no 
coupling region to first, third and fourth terminal. With no 
coupling, the inversion layer of plate in the storage node is isolated from the adjacent nodes. In doing so, the plate can swing 
ground level to positive supply level to write. As a result, no negative generator is required for controlling plate. Word line and 
bit line keep 
ground level during standby, and rise to supply level for read or write operation. In this manner, no 
holding current is required during standby, and operating current is dramatically reduced with no negative generator. Write has a sequence to clear the state of 
cell before writing to store data regardless of previous state. 
Refresh cycle is periodically asserted to sustain data. The present invention can be applied for destructive read, or for nondestructive read adding pull-down device to 
bit line. The height of 
cell is almost same as 
control circuit on the bulk or SOI 
wafer.