The invention relates to an
ultrasonic bonding process and a
bonding process reliability evaluation method, and belongs to the technical field of
semiconductor device packaging. The invention relates to an
ultrasonic bonding process, which comprises the following steps of: 1, before bonding, carrying out
plasma cleaning on a
metal ceramic shell to remove surface
contamination and an
oxide layer; step 2, enabling the aluminum wire to penetrate into a
chopper of a bonding
machine, enabling the aluminum wire to be in contact with the surface of the gold-plated layer at the bonding pressure of 250cN-280cN by adopting the
chopper, and enabling the aluminum wire to be in contact with the surface gold-plated layer of the bonding area in a low-pressure mode; and step 3, the bonding
machine applies ultrasonic power of 10.5-12.3 W for 400-500 ms, the aluminum wire begins to rub and destroy the gold-plated layer on the surface of the bonding area under the action of the ultrasonic power, and after the gold-plated layer is destroyed, the aluminum wire penetrates through the gold-plated layer and forms an atomic-scale mutual
diffusion interface with the
nickel-plated layer. Reliable combination of gold, aluminum and
nickel is achieved, meanwhile, a reliability evaluation method is provided, and therefore it is guaranteed that devices, circuits and the like adopting the
ultrasonic bonding technology work reliably in the life cycle.