52626 results about "Electrically conductive" patented technology

The invention provides a permanent magnet motor and a scroll inverter compressor, and relates to the technical field of scroll compressor design and manufacturing, and the permanent magnet motor comprises a stator iron core and a rotor iron core; the stator core comprises stator teeth and a stator yoke which are uniformly distributed along the circumference, fluid through grooves are formed in the outer side of the stator yoke at the tops of the stator teeth, stator grooves are formed in two adjacent stator teeth and the stator yoke between the two stator teeth, and a plurality of strands of conductive circular enameled wires are embedded in each stator groove; the outer side of the rotor core is composed of linear segments and arcs, air grooves which are evenly distributed are formed in the rotor core, non-uniform magnetic isolation bridges are formed between the air grooves and the linear segments on the outer side of the rotor core, a certain distance is formed between every two adjacent air grooves, parallel magnetic conductive ribs are formed, and permanent magnets with the magnetic field directions changing alternately are embedded in the air grooves. A rivet hole, a lightening hole and a shaft hole are arranged close to the inner side of the rotor core. Therefore, the defined proportionality coefficient Ks is kept in a reasonable range, the power density of the motor can be increased, the cost is reduced, and the efficiency is improved.

The invention belongs to the technical field of polymer preparation, and particularly relates to a curved-surface polyaniline modified 3D printing polyurethane material and application thereof. According to the preparation method, an ice crystal hard template method and a polyether glycol soft template method are combined, so that the microstructure of polyaniline is adjusted, and the curved polyaniline with regular morphology is prepared. The curved-surface arc-shaped structure has a large specific surface area, can form more contact sites with resin when being directly melt-blended with the resin, is beneficial to construction of a conductive path, and is not easy to agglomerate due to the curved-surface structure. The polyaniline with the arc-shaped structure is of a three-dimensional space structure and is directly blended with the resin to form a randomly arranged conductive network structure, so that the composite material is not easy to break when being impacted, and can be better embedded between the resin to form a stress transfer channel, and a complex three-dimensional network structure is constructed; the mechanical property and the antistatic capability of the product are improved.

The invention relates to a micro-display device based on multilayer stacking and a preparation method thereof, the micro-display device comprises a driving backboard and a plurality of pixel layers, and the driving backboard is provided with a first type of electrode contacts; the multiple pixel layers are sequentially stacked in the Z direction, sub-pixels are arranged in each pixel layer, the bottom end of each sub-pixel is electrically connected to the corresponding first type of electrode contact, and the top end of each sub-pixel is electrically connected to the corresponding first conductive layer; in two adjacent pixel layers in the multiple pixel layers, the first conductive layer of one sub-pixel in the upper pixel layer is in direct contact with the first conductive layer of one sub-pixel in the lower adjacent pixel layer. The invention also discloses a preparation method of the micro display device. According to the invention, the processing technology and the cathode interconnection structure are simplified; and meanwhile, the current conduction capability is enhanced, the power consumption of the device is reduced, and the reliability and stability of the display device are improved.

The invention provides an intelligent eddy current nondestructive testing method and system based on a flexible GMR sensor array, and relates to the technical field of nondestructive testing. According to the invention, a GMR sensor array and a micro excitation coil array are integrated on a flexible substrate, and synchronous acquisition under multi-frequency and multi-phase excitation is realized by establishing a probe-workpiece unified space coordinate system and a time synchronization reference; performing temperature drift compensation, attitude correction and gap normalization processing on the original response tensor to generate a corrected response tensor; the intelligent inversion model based on the prior constraint of the electromagnetic field jointly identifies the conductivity, the thickness and the crack parameters, and outputs a defect parameter map and a confidence map; and a detection report containing the position, the size, the depth and the confidence coefficient is generated through spatial clustering and connectivity analysis, so that high-sensitivity and high-reliability nondestructive detection under a complex curved surface structure is realized.

The invention relates to an LED display device based on vertical stacking and a preparation method thereof, the display device comprises a driving backboard and a mother pixel, the mother pixel comprises a plurality of sub-pixels, one of a first type of electrode contact and a second type of electrode contact on the driving backboard is a common-pole contact, and the other one is a non-common-pole contact; the electric connectors comprise common-pole conductive parts and non-common-pole conductive parts, the non-common-pole conductive parts are configured to be electrically connected to the first ends of the corresponding sub-pixels and electrically connected with the corresponding non-common-pole contacts, and the common-pole conductive parts are configured to be electrically connected to the second ends of the sub-pixels and electrically connected with the common-pole contacts to form a common-pole structure; each of the copolar conductive part and the non-copolar conductive part comprises an interconnection conductive part, the interconnection conductive parts are located in the corresponding pixel layers, at least one interconnection conductive part comprises a core body, the core body is a compound semiconductor, and the core body is located in the first inner fence. The invention further discloses a preparation method. The production efficiency and quality of the LED display device can be improved.

The invention relates to a glass support plate, a preparation method thereof and a packaging structure. The glass carrier plate is used for connecting a chip and a circuit board, the glass carrier plate comprises a substrate, the substrate comprises a through hole penetrating through the substrate along a first direction, the through hole comprises a first sub-through-hole part and a second sub-through-hole part at least located at two ends of the through hole, and a third sub-through-hole part located between the first sub-through-hole part and the second sub-through-hole part, the first direction is perpendicular to the plane where the substrate is located; the middle conductive part is filled in the third sub through hole part; the first seed layer at least partially covers the side wall of the first sub through hole part; the second seed layer at least partially covers the side wall of the second sub through hole part; the first conductive part is filled in the first sub through hole part, and at least part of the first seed layer is located between the side wall of the first sub through hole part and the first conductive part; and the second conductive part is filled in the second sub through hole part, and the second seed layer is at least partially located between the side wall of the second sub through hole part and the second conductive part. The conductive performance and the reliability can be improved at the same time.

The invention discloses a high-bonding-strength flame-retardant composite current collector base film and a preparation method thereof. The high-bonding-strength flame-retardant composite current collector base film is prepared from the following raw materials in parts by weight: 100 parts of PP resin, 1.5 parts of a lubricant, 0.8 part of an antioxidant and 16 parts of reinforced flame-retardant composite particles, the reinforced flame-retardant composite particles are prepared by the following steps: S1, preparing amidated porous carbon microspheres; s2, compounding the amidated porous carbon microspheres with mica powder to prepare a composite carrier; s3, loading a flame retardant to prepare a flame-retardant compound; s4, in-situ grafting of maleic anhydride grafted polypropylene is carried out, and the reinforced flame-retardant composite particles are obtained. By adding the reinforced flame-retardant composite particles into the PP resin, the flame retardance and mechanical strength of the PP-based composite current collector base film and the interface bonding force between the PP base film and the metal conductive layer can be comprehensively improved.

The invention provides a tumor electric field treatment system, an electrode slice temperature detection method and an electrode slice anomaly detection method, the system comprises an electrode slice and an adapter provided with a first controller, the electrode slice comprises a plurality of electrode units and a plurality of temperature detection units, the plurality of temperature detection units are divided into a plurality of row groups and a plurality of column groups, and the first controller is connected with the adapter. The grounding ends of the temperature detection units in each row group are jointly connected to the same grounding wire, and the signal ends of the temperature detection units in each column group are connected to the same dual-purpose signal wire after being in short circuit with the corresponding electrode units; when the dual-purpose signal line is connected to the temperature sampling point, the grounding wires are sequentially conducted, so that temperature detection signals detected by the temperature detection units are sampled based on the temperature sampling point; when the dual-purpose signal line is connected to the alternating power line, alternating electric signals are transmitted to the electrode units. Therefore, the temperature of the electrode plate can be detected by using fewer conductive traces, and whether the electrode plate is abnormal or not can be judged through temperature detection.

The invention provides a tumor electric field treatment system, an electrode slice temperature detection method and an electrode slice anomaly detection method, the system comprises an alternating current signal generator, an electrode slice and a controller, the electrode slice comprises a plurality of electrode units and a plurality of temperature detection units, the plurality of temperature detection units are divided into a plurality of row groups and a plurality of column groups, and the plurality of electrode units are connected with the controller. The grounding ends of the temperature detection units in each row group are jointly connected to the same grounding wire, and the signal ends of the temperature detection units in each column group are connected to the same dual-purpose signal wire after being in short circuit with the corresponding electrode units; when the dual-purpose signal line is connected to the temperature sampling point, the grounding wires are sequentially conducted, so that temperature detection signals detected by the temperature detection units are sampled based on the temperature sampling point; when the dual-purpose signal line is connected to the alternating power line, alternating electric signals are transmitted to the electrode units. Therefore, the temperature of the electrode plate can be detected by using fewer conductive traces, and whether the electrode plate is abnormal or not can be judged through temperature detection.

The invention discloses a broadband wave-absorbing material based on an MAX-phase metasurface structure and an impedance matching optimization method of the broadband wave-absorbing material. The wave-absorbing material comprises an MAX-phase ceramic substrate and periodic metasurface structures which are arranged on the surface of the MAX-phase ceramic substrate in an array mode and composed of conductive resonance units. The resonance units are isolated through gaps, an equivalent R1L1C1 series resonance circuit is formed in an electromagnetic field, and a base body is equivalent to a parallel resistor R2. By establishing an equivalent circuit model and optimizing parameters R1, L1, C1 and R2, impedance matching of the wave-absorbing material in a target frequency band can be regulated and controlled, so that the wave-absorbing material at least has an absorption peak of which the reflection loss is less than-10 dB. According to the optimization method, electromagnetic simulation and circuit simulation are combined, optimized circuit parameters are reversely mapped into structure geometric parameters, material preparation is guided, and accurate design and broadband absorption of the wave absorbing performance are achieved.

According to the back contact battery and the preparation method thereof provided by the invention, doping elements penetrate through the third doping region between the first doping region and the second doping region through high-temperature diffusion to form an electric leakage channel, so that a new back surface structure of the back contact battery is provided. The third doped region is formed by mixing the doping elements of the first doped region and the doping elements of the second doped region, doping of the two impurities is completed at a high temperature in one step, so that an electric leakage channel of an overlapping region is not generated, and the overlapping region of the two doped semiconductor layers with opposite conduction types in the thickness direction of the semiconductor substrate is removed, so that the conductivity of the semiconductor substrate is improved. Therefore, electric leakage loss of the back contact battery in a forward voltage area can be controlled, current in the electric leakage channel is introduced to the grid line of the first electrode or the second electrode through the electric leakage channel or the connecting electrode, the hot spot risk of the back contact battery is reduced, the safety performance of the back contact battery is effectively improved, and the service life of the back contact battery is prolonged. And the back contact battery has relatively high working performance.

The invention relates to an LED display device based on vertical stacking and a preparation method thereof. The display device comprises a driving backboard and a mother pixel, the mother pixel comprises a plurality of sub-pixels, one of a first type of electrode contact and a second type of electrode contact on the driving backboard is a common-pole contact, and the other one of the first type of electrode contact and the second type of electrode contact on the driving backboard is a non-common-pole contact; the non-common-pole conductive pieces are configured to be electrically connected to the first ends of the corresponding sub-pixels and electrically connected with the corresponding non-common-pole contacts, and the common-pole conductive pieces are configured to be electrically connected to the second ends of the sub-pixels and electrically connected with the common-pole contacts to form a common-pole structure; each of the copolar conductive part and the non-copolar conductive part comprises at least one interconnection conductive part, a compound semiconductor region is arranged in the pixel layer where the interconnection conductive part is located, a backfill hole is formed in the compound semiconductor region, and the backfill hole is filled with the interconnection conductive part. The invention further discloses a preparation method. The stability and reliability of the LED display device can be improved, and the LED display device is more convenient to process.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a capping mask layer positioned on the substrate; a first gate insulating layer positioned along the capping mask layer, inwardly positioned in the substrate, and including a U-shaped cross-sectional profile; a first work function layer positioned on the first gate insulating layer; a first conductive layer positioned on the first work function layer; and a first capping layer positioned on the first conductive layer. The first capping layer includes germanium oxide. A top surface of the first capping layer and a top surface of the capping mask layer are substantially coplanar.

The invention belongs to the technical field of radar wave-absorbing materials, and discloses a double-sided wave-absorbing broadband stealth composite material and a preparation method thereof. The broadband stealth composite material with the double-sided wave absorbing function comprises a non-metal-based composite material body and at least five metamaterial layers arranged in the thickness direction of the non-metal-based composite material body at intervals. The number of the metamaterial layers is an odd number, a middle metamaterial layer is arranged in the middle of the metamaterial layers in the thickness direction, and the rest metamaterial layers are symmetrically distributed on the two sides of the middle metamaterial layer; the metamaterial layer comprises conductive pattern units which are periodically arranged; the relative dielectric constant of the nonmetal-based composite material body is not greater than 10; the double-sided wave-absorbing broadband stealth composite material does not contain a metal reflecting layer. When electromagnetic waves with the frequency of 1-18 GHz vertically enter the material, the transmissivity of the material is small (smaller than-13 dB, namely smaller than 5%), and meanwhile the material has low reflectivity in a broadband. And the preparation method is simple to operate and easy to realize large-scale production.

The invention provides a preparation method of a package carrier plate, the package carrier plate and a package structure. The preparation method of the package carrier plate comprises the steps that conductive columns and filling materials are placed in through holes; and curing the filling material to form a filling part. The conductive columns do not need to be prepared in the through holes in an electroplating mode, so that the packaging carrier plate with a high aspect ratio can be prepared conveniently, pores generated in the conductive columns due to non-uniform diffusion of electroplating liquid medicine in the through holes can be avoided, and the electrical performance and the reliability of the packaging carrier plate are ensured. Meanwhile, the arrangement of the filling parts can enhance the connection stability between the conductive columns and the substrate.

The invention provides a carbon ceramic resistor and a preparation method thereof, and relates to the technical field of special material production of power systems and electrical equipment. The preparation method comprises the steps that carbon-containing electric conductor raw materials are mixed to obtain a first mixed raw material, and the carbon-containing electric conductor raw materials comprise, by mass, 15 parts of gluconic acid, 10 parts of aluminum oxide and 55 parts of deionized water; performing hydrothermal reaction on the first mixed raw material to obtain a carbon-containing conductor precursor; the carbon-containing conductor precursor is carbonized in a protective atmosphere, a carbon-containing conductor of a core-shell structure is obtained, and the carbon-containing conductor takes aluminum oxide as an inner core and takes a conductive carbon material formed by gluconic acid as a conductive outer shell; mixing the carbon-containing electric conductor with the core-shell structure with a carbon ceramic matrix raw material to obtain a resistor blank; and sintering the resistor blank to obtain the carbon ceramic resistor. The uniformity, the stability and the reliability of the carbon ceramic resistor are improved, so that the carbon ceramic resistor can better meet the application requirements of ultrahigh-voltage and extra-high-voltage alternating-current power transmission systems.

The invention provides a tumor electric field treatment system, an electrode slice temperature detection method and an electrode slice anomaly detection method, the system comprises an electrode slice and an adapter provided with a first controller, the electrode slice comprises a plurality of electrode units and a plurality of temperature detection units, the plurality of temperature detection units are divided into a plurality of row groups and a plurality of column groups, and the first controller is connected with the adapter. The grounding ends of the temperature detection units in each row group are jointly connected to the same grounding wire, and the signal ends of the temperature detection units in each column group are connected to the same dual-purpose signal wire after being in short circuit with the corresponding electrode units; when the dual-purpose signal line is connected to the temperature sampling point, the grounding wires are sequentially conducted, so that temperature detection signals detected by the temperature detection units are sampled based on the temperature sampling point; when the dual-purpose signal line is connected to the alternating power line, alternating electric signals are transmitted to the electrode units. Therefore, the temperature of the electrode plate can be detected by using fewer conductive traces, and whether the electrode plate is abnormal or not can be judged through temperature detection.

The invention provides a preparation method of an inertial sensor and the sensor. The preparation method comprises the following steps: sequentially forming a first cavity and a first oxide layer on a first silicon wafer; bonding the first silicon wafer and a second silicon wafer, wherein the second silicon wafer is a low-resistance silicon wafer; forming an inertia sensitive structure in the second silicon wafer; correspondingly forming a second cavity on a third silicon wafer, wherein the third silicon wafer is a low-resistance silicon wafer; bonding the third silicon wafer and the second silicon wafer; an isolation groove penetrating through the third silicon wafer is formed through etching, a conductive silicon column and an electric signal isolation ring are formed, and the conductive silicon column is connected with the inertia sensitive structure; and forming a sealing insulating layer on the surface of the third silicon wafer, and forming a signal lead-out pin in the sealing insulating layer. According to the scheme, thermal stress caused by thermal expansion coefficient mismatch among the three layers of wafers is reduced through an all-silicon wafer level packaging process, and the full-temperature characteristic of the device is greatly enhanced; and the preparation process flow is optimized, the process control difficulty is reduced, and the preparation cost is reduced.

In some embodiments, a cable can include an electrically conductive inner core. A first insulation layer can be disposed about the inner core. An electrically conductive layer can be disposed about the first insulation layer. A second insulation layer can be disposed about the electrically conductive layer. A first polymer jacket can be disposed about the second insulation layer. The first polymer jacket can include a first layer of armor strength members disposed therein. A second polymer jacket can be disposed about the first polymer jacket. The second polymer jacket can include a second layer of armor strength members disposed therein. An outer polymer jacket can be disposed about the second polymer jacket. At least one of the first polymer jacket, the second polymer jacket, and the outer polymer jacket can be formed from an aliphatic polyketone polymer, an ethylene-propylene copolymer, a polyolefin elastomer, a polypropylene, or a cross-linkable polyethylene.

The invention relates to an LED display device based on vertical stacking and a preparation method thereof, the display device is provided with a driving back plate and a mother pixel, the mother pixel comprises a plurality of sub-pixels, the driving back plate comprises a first type of electrode contacts and a second type of electrode contacts, and electric connecting pieces comprise copolar conductive pieces and non-copolar conductive pieces. Each non-copolar conductive piece corresponds to a different sub-pixel; one of the first type of electrode contacts and the second type of electrode contacts is a common-pole contact, and the other one is a non-common-pole contact; the driving backboard comprises a plurality of non-common-pole contacts, the plurality of non-common-pole contacts are divided into at least two ring groups, and each ring group corresponds to different sub-pixels; the non-co-polar conductive members are configured to be electrically connected to the non-co-polar contacts in the ring groups of the respective corresponding sub-pixels, and the co-polar conductive members are configured to be electrically connected to the co-polar contacts to form a co-polar structure. The invention further discloses a preparation method. According to the invention, the problem of overhigh local current density in the display device is effectively improved, and the reliability and stability of the device are effectively improved.

The embodiment of the invention provides a chip carrier plate and a manufacturing method thereof, a chip packaging structure, and a manufacturing method of the chip carrier plate, and the method comprises the steps: forming a first protection layer on a first surface of a glass substrate, forming a plurality of first through holes in the first protection layer, carrying out the laser induction of the glass substrate through the first through holes, and forming a plurality of induction regions, and in the induction area, etching the glass substrate to form a plurality of second through holes penetrating through the glass substrate, and forming conductive connection parts in the second through holes. The first protection layer with the first through hole is manufactured on one side of the glass substrate, the first protection layer exposes the area, needing laser induction, on the glass substrate, the area, not needing laser induction, on the glass substrate is protected, and it is avoided that when the glass substrate is etched subsequently, etching damage is caused to other positions of the surface of the glass substrate. Therefore, the thickness of the glass substrate can be ensured, and the surface quality such as roughness of the surface of the glass substrate can be ensured.

The utility model discloses a back contact battery and a photovoltaic assembly, and relates to the field of photovoltaic technology. The method is used for reducing the process difficulty of forming a patterned first transparent conductive layer during mass production and is beneficial to prolonging the service life of a screen printing plate for manufacturing the patterned first transparent conductive layer. The back contact battery comprises a semiconductor substrate, a first doped semiconductor part, a second doped semiconductor part and a first transparent conductive layer. The second doped semiconductor portion is disposed on the second region and extends to cover the first doped semiconductor portion in the overlapping region. The first transparent conductive layer is disposed on the second doped semiconductor portion. A partial region in the overlapping region is a reverse electric leakage region. And a first transparent conductive layer extending from the second region is arranged in the reverse electric leakage region. The side line of the side, close to the first area, of the first transparent conducting layer is a first side line, the first side line is of a periodically repeated convex-concave alternating structure, and transition lines between convex and concave in the convex-concave alternating structure are not parallel to the first direction.

An electromechanical joint provides rotational movement in at least two dimensions while conducting electrical power between orthogonal hubs. The joint, shaped as a cross, has four conical shafts positioned orthogonally and apart from each other within an interior of a housing. Apexes of the conical shafts face each other proximate a centroid of the housing. A conductive fluid, such as Galinstan, fills recesses between the conical shafts. Separate yokes attached to pairs of the hubs may impart forces on the shafts, causing the shafts to rotate within the conductive fluid around orthogonal axes. The conductive fluid provides simultaneous conduction of electrical power between the hubs. The yokes may be affixed respectively to a current collector and conductive arms of a work machine for improved movement and power conduction without the need for additional components.

The invention provides a surface-modified sulfide electrolyte and a preparation method thereof, and an all-solid-state battery, the surface-modified sulfide electrolyte comprises a sulfide electrolyte and a modification layer coated on the surface of the sulfide electrolyte, the chemical general formula of the modification layer is LiaMbNcXd, 0 < = a < = 3, 0 < = b < = 1, 0 < = c < = 1, 0 < = d < = 6, and 0 < = c < = 1. M is at least one element of magnesium, aluminum, calcium, iron, zirconium, niobium, tantalum, tungsten, gadolinium, yttrium, indium, hafnium, lanthanum and ytterbium, and X is at least one element of oxygen, sulfur, fluorine, chlorine, bromine and iodine. According to the surface-modified sulfide electrolyte, the modification layer with high ionic conductivity and high oxidation potential is coated outside the sulfide electrolyte, so that when the surface-modified sulfide electrolyte is applied to a positive electrode of an all-solid-state battery, the modification layer can improve the oxidation potential of the electrolyte on the premise of not reducing the ionic conductivity of the electrolyte; the effects of improving the interface stability between the positive electrode active material and the sulfide electrolyte and further improving the cycle performance of the battery are achieved.

The invention relates to the technical field of sensors, in particular to a high-sensitivity pressure-temperature dual-mode sensor and a preparation method thereof.The preparation method comprises the steps that a carbon nano tube is subjected to acid treatment and then reacts with a silane coupling agent KH550, and an aminated carbon nano tube is prepared; the method comprises the following steps: carrying out hydrothermal reaction on a phosphorus source and a graphene oxide aqueous solution to prepare phosphorus-doped reduced graphene oxide; the preparation method comprises the following steps: synthesizing Au-Ag heterojunction nano dispersion liquid through an Au nano seed method; mixing the three components and carrying out ultrasonic treatment to obtain mixed dispersion liquid; the preparation method comprises the following steps: modifying a PDMS substrate with KH560 and polyethylene glycol diamine to prepare a modified PDMS substrate; and coating the mixed dispersion liquid on a modified substrate to form a sensitive layer, and preparing an electrode to obtain the sensor. The aminated carbon nanotubes and the phosphorus-doped reduced graphene oxide construct a three-dimensional conductive network, so that high-sensitivity pressure detection is realized; the phosphorus-doped reduced graphene oxide and the Au-Ag heterojunction form a Schottky barrier, so that stable temperature sensing is realized; and the modified PDMS and the sensitive layer are strongly combined to improve the mechanical durability.

The invention relates to the technical field of MIP devices, solves the problems that in the prior art, a single-pixel MIP device is large in pin number, low in screen body contrast ratio and high in manufacturing cost, and provides an all-in-one MIP device and a manufacturing method thereof.The manufacturing method comprises the steps that a substrate to be processed is obtained, and bonding pads and copolar lines are formed on the second surface of the substrate through deposition; depositing and forming an insulating layer in a non-pad area in the second surface; forming a through TGV conductive through hole in the substrate along the thickness direction, and forming a conductive metal layer in the TGV conductive through hole; forming back pin metals in one-to-one correspondence with the TGV conductive through holes on the first surface to form a pin array; welding the LED chips on the bonding pad in a flip-chip manner, and arranging the LED chips at intervals to form pixel units; and a packaging layer is deposited and formed on the LED chip and the gap area of the LED chip, and the all-in-one MIP device is obtained. The number of the pins is reduced, the contrast ratio of the screen body is improved, and the manufacturing cost is reduced.

The invention relates to a micro-display device which comprises a driving backboard and a plurality of pixel layers, and a mother pixel comprises a plurality of sub-pixels; the top end of each sub-pixel is electrically connected to the corresponding second type of electrode contact through a top conductive layer, and the bottom ends of the plurality of sub-pixels are interconnected through a bottom conductive layer and then electrically connected to the corresponding first type of electrode contact to form a bottom copolar structure; wherein the axes of all the sub-pixels in the mother pixel do not coincide; in the two sub-pixels of different pixel layers, the bottom conducting layers of the two sub-pixels are connected through a common-pole conducting piece, one side of one sub-pixel in the lower pixel layer is provided with at least one non-light-emitting unit to jointly form a unit body, and the common-pole conducting piece penetrates through one non-light-emitting unit in the unit body. The light efficiency and reliability of the micro display device can be improved.

The invention belongs to the technical field of electrochemical energy storage, and provides an immersed energy storage system and a thermal management method thereof, the immersed energy storage system comprises a sealed cabin, a battery module, an immersion liquid, a liquid cooling unit, a cooling liquid, a liquid cooling pipeline, a temperature sensor, an electrical device and a thermal management controller; the non-conductive immersion liquid with the conductivity smaller than 10 <-6 > S / m and the flash point larger than 200 DEG C is adopted to completely wrap the battery module, it is ensured that the energy storage battery cells are located in the same temperature physical environment, the temperature consistency of the system is greatly improved, the problem of uneven heat dissipation is fundamentally solved, the service life of the energy storage cabinet is directly prolonged, the immersion liquid has the flame-retardant characteristic, and the service life of the energy storage cabinet is prolonged. Thermal runaway of a battery cell can be effectively restrained, fire and explosion risks are reduced from the source, system operation safety is guaranteed, meanwhile, the type selection standard of cooling liquid is defined, the design of a sealed cabin is optimized, the heat exchange efficiency is improved through a double-circulation branch of a liquid cooling unit, the key bottleneck of an immersed cooling technology in energy storage system integration is thoroughly solved, and the energy storage system integration efficiency is improved. And full landing of technical advantages is realized.

A semiconductor device includes a semiconductor layer having first and second principal surfaces, an insulated gate bipolar transistor (IGBT) region formed in the semiconductor layer, and a diode region formed adjacent to the IGBT region in a first direction. A plurality of gate trenches are arranged in the IGBT region and extend in a second direction intersecting the first direction. Each trench includes a gate conductive layer embedded through a gate insulating layer, and unit cells are defined between adjacent trenches. An emitter region is formed on the first principal surface of each unit cell. The emitter region of a unit cell located closer to the diode region has a smaller area than the emitter region of a unit cell located farther from the diode region.

The invention provides a tumor electric field treatment system and an electrode slice temperature detection method, the system comprises an electrode slice and a controller, the electrode slice comprises a plurality of electrode units and a plurality of temperature detection units, the plurality of temperature detection units are divided into a plurality of row groups and a plurality of column groups, the grounding ends of the temperature detection units in each row group are jointly connected to the same grounding wire, and the signal ends of the temperature detection units in each column group are connected to the same dual-purpose signal wire after being in short circuit with the corresponding electrode units; when the dual-purpose signal line is connected to the temperature sampling point, the grounding wires are sequentially conducted, so that temperature detection signals detected by the temperature detection units are sampled based on the temperature sampling point; when the dual-purpose signal line is connected to the alternating power line, alternating electric signals are transmitted to the electrode units. In this way, a plurality of electrode units can be zoned and controlled using fewer conductive traces.