4results about How to "Reduce heat spread" patented technology

The application discloses a near-zero-consumption building construction activity board house wall structure, which comprises a positioning base, an I-shaped clamping plate and a board house wall body, the positioning base is anchored to a foundation, an I-shaped clamping plate is fixed above the positioning base, a sealing gasket is bonded to the inner side of the I-shaped clamping plate, and the two I-shaped clamping plates are clamped with the two sides of the board house wall body through the sealing gaskets respectively, the board house wall body comprises a water tank, an outer wall body, an inner wall body, a thermal insulation board and an interior trim board arranged in sequence from left to right, a vacuum assembly is arranged between the outer wall body and the inner wall body so as to reduce heat propagation, and a phase change material is arranged between the thermal insulation board and the interior trim board, the structure not only can realize good thermal insulation, but also has good heat storage function.

The invention discloses a battery device, a heat insulation assembly and a power utilization device, and relates to the technical field of batteries, the battery device comprises the heat insulation assembly and a plurality of battery monomers, the plurality of battery monomers are arranged in sequence, the heat insulation assembly is arranged between the adjacent battery monomers, the heat insulation assembly comprises a shell, a phase change material piece and a supporting piece, the shell is provided with a liquid outlet and an air inlet, and the liquid outlet is communicated with the phase change material piece. The air inlet is located above the liquid outlet, the phase change material piece is arranged in the containing cavity and changes phases between a liquid state and a solid state, the solid-state phase change material piece blocks the air inlet and the liquid outlet, the liquid-state phase change material piece opens the air inlet and the liquid outlet and discharges the air through the liquid outlet, and the supporting piece is an elastic piece and is arranged in the containing cavity. By arranging the heat insulation assembly, the risk of thermal runaway spreading is reduced, by arranging the gas inlet and the liquid outlet in the shell, the risk of pyrolysis product accumulation is reduced, the contact thermal resistance can be ensured after the phase change material piece is discharged, and meanwhile, the structure of the battery device can be simplified.

The invention discloses a cylindrical battery and a power utilization device, and belongs to the technical field of new energy materials. By adopting an in-situ polymerization technology, a compact and continuous quasi-solid electrolyte network is constructed in the cylindrical roll core, so that the safety pain points that a traditional liquid lithium ion battery is easy to leak and inflammable and explosive are fundamentally solved, and meanwhile, the technical bottlenecks that a solid-solid interface of a solid-state battery is poor in contact and large in impedance are overcome; according to the battery system, atomic-scale close contact of the electrolyte and the electrode particles is realized, the intrinsic safety and the energy density of the battery are remarkably improved while high ionic conductivity is ensured, and the battery system is particularly suitable for the power and energy storage fields with extremely high safety requirements.

The application provides a silicon-on-insulator structure and a forming method thereof, and the forming method of the silicon-on-insulator structure increases the room-temperature bonding strength during a bonding process through an activation treatment, reduces the temperature required in a subsequent reinforcement process, thereby reducing the thermal diffusion of heterogeneous components in the etching stop layer, ensuring the clear interface between the etching stop layer and a device layer, and further avoiding the deterioration of the thickness uniformity of the device layer after the etching stop layer is removed in the subsequent process; the uniformity of the device layer after etching is controlled through two selective etching processes, so that the thickness uniformity of the device layer of the finally obtained silicon-on-insulator structure is less than 10%; and the formation and removal of a sacrificial oxide layer make the surface of the device layer not have a porous morphology of high-frequency etching undulation.